JP3193575B2 - Microwave plasma processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention relates to microwave plasma processing.
The present invention relates to an apparatus, and more particularly to a microwave plasma processing apparatus suitable for generating plasma using microwaves and performing plasma processing such as etching and film formation on a sample such as a semiconductor element substrate.

[0002]

2. Description of the Related Art A conventional microwave plasma processing apparatus includes:
For example, the one described in JP-A-4-133322 is known. In this device, the shape of the waveguide is substantially cylindrical,
A discharge chamber connected to the waveguide through a microwave-transmitting window provided in an airtight manner is formed by a discharge block formed of a conductive material of a hollow cylinder which is expanded in a tapered shape in the direction of microwave propagation. Using the interaction between the magnetic field generated in the discharge chamber by the air-core coil provided on the outside and the electric field of the microwave introduced into the discharge chamber through the waveguide, a high-density plasma is generated, and the processing is uniform. There is something that improves the performance.

[0003]

The above prior arts are concerned with the microwave mode introduced into the discharge chamber, the plasma resistance of the wall material of the discharge chamber, and the change in process characteristics during continuous processing. Was not considered. That is, with respect to the lines of electric force of the microwaves propagating in the waveguide, the introduction shape into the discharge chamber is not sufficiently considered, and the uniformity and generation efficiency of the plasma are not sufficient. In the related art, the discharge block is formed of a nonmagnetic conductive material, for example, aluminum, and when the material to be processed in the etching process is Al or an Al alloy, a halogen gas is used as an etching gas. When such a gas is turned into plasma, there is a problem that the inner wall surface of the discharge block forming the discharge chamber together with the material to be processed is also etched by the active species in the plasma. Furthermore, a plasma generation chamber (discharge block) during plasma processing
However, there is a problem that a change in the treatment with time occurs due to an increase in the temperature of the substrate and the adhesion of reactive products generated during the plasma treatment.

An object of the present invention is to provide a microwave plasma processing apparatus capable of optimizing a microwave mode introduced into a discharge chamber and obtaining uniform and high-density plasma.

It is another object of the present invention to provide a microwave plasma processing apparatus capable of performing a plasma processing on a material using a halogen gas without etching the discharge block.

Another object of the present invention is to provide a microwave plasma capable of performing a stable plasma process while maintaining a good state of processing performance for processing an object to be processed during a continuous process without a change over time. An object of the present invention is to provide a processing device .

[0007]

The object of the present invention is to provide a sample stage in which a substrate to be processed is arranged, and a processing chamber having a sample stage therein and having an opening opposed to the surface of the sample stage on which the substrate is to be processed. A discharge block having a hollow cylinder made of a non-magnetic conductive material attached to the outside of the opening of the processing chamber and having an inner surface tapered in the direction of the sample table and having a microwave introduction window at the other end of the discharge block. Circular waveguide, tuning means provided in the circular waveguide for tuning microwaves, solenoid coil provided outside the discharge block, and gas supply means for supplying a processing gas into the discharge block And evacuation means for evacuating the processing chamber to a predetermined pressure.

The above and other objects are achieved by forming a plasma-resistant protective member on the inner wall surface of the discharge block.

Further, another object of the present invention is to provide an apparatus in which a heater capable of adjusting the temperature is attached to the above-mentioned discharge block, wherein the substrate to be processed is subjected to plasma processing while the plasma generation chamber is kept constant at a predetermined temperature. After the substrate to be processed is plasma-processed and unloaded from the processing chamber, the processing chamber is plasma-cleaned without disposing the substrate to be processed on the sample stage, the plasma cleaning is completed, and a new substrate is loaded into the processing chamber. This is achieved by a method of processing a new substrate to be processed.

[0010]

The microwave propagating through the circular waveguide is
Tuned by the tuning means set to the optimal shape for impedance matching in that space,
The processing gas, which is introduced into the discharge block through the microwave introduction window in a uniform and most efficient state and is controlled to a predetermined pressure by the gas supply means and the vacuum evacuation means, is connected to the efficiently introduced microwave electric field. Due to the interaction with the magnetic field by the solenoid coil, the plasma is further uniformly and densely formed. Thereby, the processing performance is further improved.

Further, by forming a protective member on the inner wall surface of the discharge block, the discharge block itself is etched even when the material to be processed is made of the same material as the discharge block with respect to the plasma generated in the discharge block. The plasma processing with good processing performance can be performed regardless of the material of the material to be processed.

Further, a heater capable of adjusting the temperature is provided in the discharge block, and the substrate to be processed is subjected to plasma processing while the plasma generation chamber is maintained at a predetermined temperature, and the substrate to be processed is subjected to plasma processing and carried out of the processing chamber. After that, the processing chamber is plasma-cleaned in a state where there is no substrate to be processed on the sample stage, the plasma cleaning is completed, a new substrate to be processed is carried into the processing chamber, and a new substrate is processed. Accordingly, a clean state can be maintained in the processing chamber, and stable plasma processing can be continuously performed.

[0013]

FIG. 1 shows an embodiment of the present invention. FIG. 1 shows a configuration diagram of a microwave plasma processing apparatus. In this case, a case where the plasma processing apparatus is applied to an etching process will be described. In FIG. 1, a processing chamber 1 is formed of, for example, stainless steel, and is formed of a container having a space therein. The processing chamber 1 has a circular opening at the upper part and an exhaust port 11 at the lower part. Exhaust port 1
1 is connected to a vacuum exhaust means. In this case, the evacuation means is composed of a pressure control valve 12, a turbo molecular pump 13, a hot valve 14, and a rotary pump 15, and is connected to the evacuation port 11 sequentially through a pipe. In addition, the exhaust port 11 is located in front of the pressure control valve 12,
A pressure detector 17 (in this case, a Penning vacuum gauge) for detecting a high vacuum via the valve 16 is attached. Further, a diaphragm vacuum gauge (not shown) for detecting a pressure during processing in front of the pressure control valve 12 is attached to the exhaust port 11. In this case, the processing chamber 1 has a structure in which an internal space is partitioned by a partition valve 18 using bellows. A lifting drive 19 is connected to the gate valve 18.

A support is provided at an opening in the upper part of the processing chamber 1, and a wafer retainer 19 is placed and held on the support. Incidentally, the wafer holder 19 on the support may be of a mechanical type like this mechanism, but may be of an electrostatic suction type for electrically fixing the wafer. A hollow cylindrical discharge block 3 is hermetically attached to an opening above the processing chamber 1 via a ring-shaped base flange 2. The inner surface of the discharge block 3 is directed downward (on the drawing) by about 10 ° in the axial direction.
The tapered shape is formed at an angle of 20 °, and a plurality of (in this case, 20 to
50 gas outlets 32 are provided evenly. The tapered shape of the inner surface of the discharge block 3 is for uniformly dispersing the plasma and uniformly processing the substrate to be processed, and the angle of the taper is such that the electric field mode is changed when the microwave advances in the discharge block 3. It is preferable to set a gentle angle so that the change or other electric field modes are not increased and mixed. The dimensions of the taper angle is, for example, when the field mode TE ₁₁ or approximation mode of the microwaves, the diameter of the substrate when is D, at the position of the substrate 1.5 to 2.0
D, it is desirable that the position of the microwave introduction window is 0.5 to 1.5D, and the height therebetween is 1.0 to 1.5D. The discharge block 3 is formed of a non-magnetic conductive material such as aluminum and non-magnetic stainless steel. Discharge block 3
A protective member, which is a plasma-resistant member, is formed on the inner surface of. The plasma resistant member is a material that is hardly etched by active species in the plasma. For example, alumina, mullite (Al ₂ O ₃ + SiO ₂ ), quartz or the like is used. In this case, a protective film 31 is formed as a protective member. Further, a quartz sleeve 31A is inserted into the inner wall surface of the protective film 31. A heater 33 and a thermocouple (not shown) are attached to the outer peripheral surface of the discharge block 3 in contact with each other, and the discharge block 3 is heated to a temperature of about 120 ° C. by a control device 34 connected to the heater 33 and the thermocouple. Temperature controlled. At the upper opening of the discharge block 3, a disk-shaped microwave introduction window 4 made of a material capable of transmitting microwaves such as quartz or alumina is hermetically attached, and communicates with the processing chamber 1 and the processing chamber 1. The plasma generation space in the discharge block 3 is kept airtight. The inner surface of the discharge block is formed of a protective film and quartz side walls in order to prevent damage by ions and radicals in the plasma.

A circular waveguide 5 is connected to the microwave introduction window 4. At the other end of the circular waveguide 5, a rectangular-circular conversion waveguide 51 and a rectangular waveguide 52 are sequentially connected.
The microwave oscillator 6 is attached to the end of the rectangular waveguide 52. The circular waveguide 5, for supplying a fixed mode such as TE _11, tuning means for tuning the microwaves is provided. Here, the tuning means means that only the selected mode is propagated to the discharge block, and means a means for reducing the amount of microwave reflection. In this case, the microwave tuning plate 53 is a ring-shaped disk, and in this case, is attached to the upper part of the microwave introduction window 4. The tuning means is a plate having an opening through which the microwave communicates, and the shape of the opening has an optimal shape that differs depending on the electric field mode of the microwave transmitted to the discharge block. For example, in the case of TE ₁₁ mode and the mode close to this is preferably non-circular shape such as an ellipse. In the case of the _TE01 mode, a circular shape is effective. If the microwave tuning plate is made to have an optimal shape adapted to such a microwave mode, the electric field shape distribution (distribution in a plane parallel to the surface to be processed) of the plasma portion in which the microwave is absorbed becomes uniform. Uniformity of sample processing is achieved.

Around the outer circumference of the circular waveguide 5 and the discharge block 3, a solenoid coil 91 and a solenoid coil 92 are mounted on the coil case 9 so as to be located. The solenoid coil 91 is the solenoid coil 9
The magnetic field strength can be generated by a control device 93 connected to the solenoid coils 91 and 92. The coil case 9 is attached and fixed to the circular waveguide 5 and the discharge block 3, and the upper part of the coil block 9 is integrated with the discharge block 3 so as to be separable from the base flange 2. The upper part of the discharge block 3 is attached and detached by lifting means (not shown). A cooling gas supply port 94 is provided at a lower portion of the coil case 9, and a ventilation hole 54 is provided at a lower portion of the circular waveguide 5 so that a cooling gas such as nitrogen gas or air can be supplied into the coil case 9. The cooling gas supplied into the coil case 5 is supplied to the waveguides 5, 51, 52 through the ventilation holes 54.
Through to the atmosphere.

The base flange 2 is provided with a gas supply port 21 for a processing gas. A gas outlet 32 is provided through a gas communication passage provided in a fitting portion with the discharge block 3 and a gas pipe provided in the discharge block 3. A gas supply passage leading to is formed. Further, for example, a quartz plate having a gas blowing hole is installed under the microwave introduction window 4 made of a quartz plate, and a processing gas is introduced between the quartz plate and the microwave introduction window 4, and the processing gas is introduced. Can be blown out from the upper part of the discharge block 3 (not shown). In this manner, the replacement of the old and new processing gases in the discharge block 3 is promoted in combination with the tapered shape of the inner surface of the discharge block 3.
For this reason, the reaction products can be easily discharged to the outside of the discharge block 3, and improvement in the etching rate, uniformity, and the like can be expected. The gas communication passage provided in the fitting portion between the base flange 2 and the discharge block 3 is formed when they are combined.

At the bottom of the processing chamber 1, a sample table 8 on which a wafer 10 as a substrate to be processed is placed is provided via an insulating material 7 so as to coincide with the axis of the discharge block 3 provided at the top. A high-frequency power supply (not shown) is connected to the sample table 8 so that a bias voltage can be applied. At the center of the sample stage 8, a wafer 10 is placed on the sample stage 8.
Alternatively, when the wafer 10 is removed from the sample table 8, the wafer 10 is transferred to a known transfer unit (not shown), for example, a robot arm.
A wafer push-up 81 for exchanging wafers is provided. An elevating drive unit 82 is provided at the lower end of the wafer push-up 81 and moves the wafer push-up 81 up and down. The lifting drive device 82 is fixedly supported by a support member 83 connected and attached to the lower portion of the sample table 8. Further, an elevating drive device 84 is provided below the support member 83, and moves the sample table 8 up and down.
The lifting drive 84 is fixedly supported by a support member 85 attached to the lower part of the processing chamber 8. A spiral coolant flow path 86 is formed in the sample table 8, and the coolant flow path 86 is connected to a coolant supply port 87 and a coolant recovery port 88 provided in the support member 85 via a pipe.

In the microwave plasma etching apparatus configured as described above, with the wafer being introduced into a load lock chamber (not shown) by a known technique and held in a vacuum, the gate valve 18 is moved by the elevation drive device 19. It is lowered and carried into the processing chamber 1 by a transfer arm (not shown). At this time, the sample stage 8 is lowered by the elevation drive device 84. The wafer lifting device 81 is also lowered by the lifting drive device 82. When the transfer arm on which the wafer is mounted is stopped above the sample table, the lifting drive 82
As a result, the wafer lift 81 rises, and the wafer is received on the wafer lift 81 from above the transfer arm. When the wafer moves onto the wafer lifting 81, the transfer arm returns to the retreat position, and thereafter, the gate valve 18 is raised to partition the inside of the processing chamber 1 into a closed space, and the inside of the processing chamber 1 is evacuated by the vacuum exhaust means. .

After the transfer arm is retracted, the wafer lift 81 is lowered, and the wafer 10 is placed on the upper surface of the sample table 8. Thereafter, the sample table 8 is raised to a predetermined position required for plasma processing by the lifting drive device 84. At this time, while the sample stage 8 is being lifted, the upper surface of the rising wafer 10 comes into contact with the wafer holder 19 placed in a support state in the processing chamber 1, and the wafer holder 19 is lifted as it is. As a result, the wafer 10 is supported on the upper surface of the sample table 8 by the weight of the wafer presser 19 (or pressing using a spring force). The wafer 10 may be supported on the upper surface of the sample table 8 by using an electrostatic attraction force in addition to the wafer press. In addition, a cooling medium such as cooling water is supplied to the coolant passage 86 of the sample stage 8 from the coolant supply port 87, and the sample stage 8 is maintained at a predetermined temperature. The cooling medium is properly used depending on the temperature of the sample stage to be cooled.

When a predetermined pressure is detected by the pressure detector 17 in the evacuation of the processing chamber 1 by the evacuation means before the supply of the processing gas, the valve 16 is closed to isolate the pressure detector 17 from the atmosphere in the processing chamber 1. I do. Thus, the pressure detector 17 can be protected from the processing gas and the reaction product during the processing, and accurate detection can be performed whenever necessary. Next, a processing gas is supplied from a gas supply port 21 and a processing chamber is supplied by a diaphragm vacuum gauge (not shown) while uniformly introducing the processing gas into the discharge block 3 from a plurality of gas outlets 32 provided evenly. The pressure inside the processing chamber 1 is detected, and the inside of the processing chamber 1 is controlled to a predetermined pressure by the pressure control valve 12. At this time, in the discharge block 3, the processing gas is uniformly introduced toward the center of the upper part of the discharge block 3, and the discharge block 3 is tapered from the upper part to the lower part.
Since the gas is exhausted while being uniformly diffused in the internal space, it is possible to improve the uniformity of the generated plasma.

When the pressure inside the processing chamber 1 reaches a predetermined pressure for processing, a microwave is oscillated from the microwave oscillator 6,
Microwaves are introduced into the discharge block 3 through the circular waveguide 5 and the microwave introduction window 4. At this time, the microwave guided into the circular waveguide 5 via the rectangular waveguide 52 and the rectangular-circular conversion waveguide 51 is combined with the expanded space in the circular waveguide 5 and the microwave tuning plate. 53, impedance matching is performed, a uniform and strong electric field is formed, and the discharge block 3
Introduced within. At this time, the discharge block 3 is heated by the heater 33 and is maintained at a predetermined temperature by the controller 34 while detecting the temperature by a temperature detecting means (thermocouple) not shown. On the other hand, the solenoid coil 91
A power is supplied to the control block 93 and a control unit 93 so that a magnetic field of a predetermined intensity is generated, and a magnetic field is generated so as to form a flat ECR (Electron Cyclotron Resonance) surface in the discharge block 3. By the introduction of the microwave into the discharge block 3 and the formation of the magnetic field, the processing gas in the discharge block 3 undergoes the ECR action and is turned into plasma. The plasma generated at this time is uniformly and densely generated by the electric field from the circular waveguide 5 that is uniformly strengthened by the action of the microwave tuning plate 53. The microwave tuning plate 53 is set to an optimal shape for matching the impedance of the microwaves in the circular waveguide 5, makes the microwaves in the circular waveguide 5 uniform, and makes the inside of the discharge block 3 efficiently. Lead to.

With the uniform and high-density plasma generated in the discharge block 3, the wafer 10 is plasma-processed with high uniformity. For example, as a material to be etched, an aluminum alloy (in this case, Al-Si-Cu) is
₃ + Cl ₂ + CH ₂ F ₂ (200 sc at a flow ratio of about 6: 7: 1)
cm) of etching gas and a processing pressure of 0.01
2 Torr and microwave power of 1000 W (2.4
5 GHz), the uniformity is about 4% when the microwave tuning plate 53 is used, and about 9% of the uniformity when the microwave tuning plate 53 is not used. The improvement could be obtained.
In this case, the evaluation result of the uniformity only by the active species in the plasma without applying a high frequency voltage to the sample stage 8 is shown.

Further, when the wafer 10 is subjected to the plasma processing in this manner, the amount of electric power supplied to the solenoid coils 91 and 92 is controlled to determine the position where the ECR surface can be formed.
By moving the wafer closer or farther away from the wafer 10, the amount of ions in the plasma incident on the wafer 10 changes, thereby selecting processing such as low-damage processing, high-speed etching processing, and selective etching. Can be.

Further, the magnetic field formed by the solenoid coils 91 and 92 is made to be a strong magnetic field, so that the resonance region with the microwave electric field is expanded in a plane, so that the sample is processed and the sample is over-etched. By changing the parallel spacing distance of the planar resonance region with respect to the surface to be processed of the sample and changing the plasma position generated by the action of the electric field by the microwave and the magnetic field by the solenoid coil, for example, when etching the sample, The plasma position is kept away from the surface to be processed of the sample to prevent residues that are likely to be generated during the etching process of the sample, and the plasma position is brought close to the surface to be processed of the sample when over-etching the sample. It is possible to etch the surface to be processed while suppressing the etching rate of the base material during the overetching of the sample.

When the wafer 10 is subjected to plasma processing in this manner, for example, in the case of the above-described processing,
AlCl ₃ is generated as a reaction product and tends to adhere to the inner wall surface of the discharge block 3 which is a plasma generation chamber.
By heating to about 120 ° C., the reaction products that are going to adhere to the inner wall surface of the discharge block 3 evaporate by elevating the temperature, and are exhausted without adhering to the inner wall surface of the discharge block 3. Thereby, a change with time of the plasma processing can be suppressed. Thus, during the plasma processing, the discharge block 3 is heated to a temperature at which the reaction product vaporizes.

The discharge block 3 exposed to the plasma
A protective member such as alumina, mullite, quartz, or the like as a plasma-resistant material, in this case, a protective film 31 is formed on the inner wall surface. In this case, the discharge block 3 made of aluminum is coated with an aluminum alloy. Even if it is the same system as the processing material, the discharge block 3 can be protected from the plasma for etching the material to be processed.

The etching process of the wafer 10 is performed in this manner. When the process is completed, the supply of the etching processing gas, the supply of the microwave power, the supply of the high frequency power, and the like are stopped, and the sample table 8 is lowered. Then, the wafer is unloaded by a process reverse to the process of loading the wafer. After unloading the wafer, a plasma cleaning gas such as O ₂ or O ₂ + SF ₆ is introduced into the discharge block 3 in place of the processing gas for etching, and the wafer 10 or a dummy wafer is placed on the sample stage 8. Without applying the high-frequency voltage to the sample table 8 without generating the plasma, the plasma is generated in the same manner as in the etching process. After this plasma cleaning is performed for several tens of seconds, a new wafer is etched in the same manner as described above. This plasma cleaning without a wafer is most effective when performed on each wafer, but a control device for controlling the processing apparatus is used every two or three wafers in consideration of the overall throughput. , And can be set for every n sheets, and the processing apparatus automatically performs cleaning. As a result, the conventional plasma cleaning processing cycle using a dummy wafer for a long time, for example, about 30 minutes, can be performed four to ten times more than the processing cycle performed for each lot. In addition to being able to extend, the wet cleaning by opening the inside of the processing apparatus, which has been performed once a week for one day, to a processing cycle of two to three weeks or more can be performed, and the throughput is greatly improved. be able to. The plasma cleaning without the substrate can be performed without affecting the sample stage 8 by short processing time and by performing a protection process such as an alumite process on the wafer placement surface of the sample stage 8. At the time of cleaning, an inert gas, for example, N ₂ , He, is placed in the gap provided with the wafer push-up 81 from below the sample table 8 upward.
When a cleaning gas is blown away from the gap provided in the wafer push-up 81 by flowing a gas that does not affect the process such as cleaning, the cleaning effect is further enhanced. In addition, even when the solenoid coils 91 and 92 and the control device 93 are omitted, and in the case of a processing apparatus using another plasma, the above-described effects are similarly obtained with respect to the improvement of the throughput.

When the discharge block 3 is opened to the atmosphere, the gas flow path between the discharge block 3 and the base flange 2 does not require connection or disconnection of gas pipes or the like. Accordingly, the discharge block 3 and the solenoid coils 91 and 92 which are integrally formed can be integrally removed from the base flange 2, thereby facilitating the preparation, inspection, and repair work of the cleaning work.

Further, the valve between the high vacuum pump such as the turbo molecular pump 13 of the vacuum exhaust means and the auxiliary pump such as the rotary pump is a hot valve capable of heating, so that the pressure on the discharge side of the high vacuum pump is increased. And it is possible to prevent reactive substances and the like from easily adhering, and it is possible to improve the reliability of the evacuation unit.

Next, another embodiment of the present invention will be described with reference to FIGS.
This will be described below. 2, the same reference numerals as those in FIG. 1 denote the same members, and a description thereof will be omitted. In this embodiment, the waveguide 5
Slot antenna 41 provided on the bottom of A, a circular TE ₀₁
In order to radiate the mode, they are arranged radially with respect to the central axis of the resonator as shown in FIG. In this case, each microwave radiated from the plurality of slot antennas 41 propagates through the waveguide 5B having a certain distance, and then forms a microwave having a circular TE ₀₁ mode as a whole. . Thus, the slot antenna and the quartz window through which the microwave is transmitted so that the microwave radiated from the slot antenna 41 forms a specific microwave mode in the entire discharge tube 3A, that is, in a plane. 4, a space is required for the microwave radiated from the slot antenna to spread to a specific microwave mode.
This space is formed by the waveguide 5B. The waveguide 5A and the slot antenna 41 are effective for stably generating an arbitrary mode microwave, and thereby effective for generating stable plasma in the discharge tube 3A. Further, by optimizing the distance between the quartz window and the four-slot antenna 41, there is an effect that uniform and high-density plasma can be generated. Moreover, the waveguide 5A and the slot antenna 41
Is set to emit a microwave in the circular TE ₀₁ mode, which is axially symmetric, and a uniform plasma can be generated by introducing the microwave in the circular TE ₀₁ mode into the discharge tube 3A. Has the effect of becoming Further, by changing the shape of the slot antenna, another mode can be introduced into the processing chamber, and by changing the plasma density, there is an effect that an optimum plasma can be supplied to the material to be processed.

As described above, according to the present embodiment, there are various functions and effects, and uniform and high-density plasma can be generated to further improve processing performance such as uniformity in plasma processing of a wafer. Thus, plasma processing with good processing performance can be performed irrespective of the material to be processed, and stable plasma processing can be continuously performed with good processing performance.

In this embodiment, the etching process of the Al alloy has been described as an example. However, the target of the material to be etched is not limited to this, but may be applied to various materials to be etched such as a metal, a gate, and an oxide film. Applicable to Also,
It goes without saying that the present invention may be applied to not only the etching process but also other plasma processes such as a film forming process.

In FIG. 1, the solenoid coils 91, 92
Even when the control device 93 is omitted, the same operation as in the present embodiment occurs with respect to the uniformity, and the uniformity of the processing can be improved.

[0035]

According to the present invention, a high-density and uniform plasma can be obtained, so that the processing performance can be further improved, and a plasma processing with a high processing performance can be performed regardless of the material of the material to be processed. Further, there are respective effects that a state in which the processing performance is good can be continued and stable plasma processing can be performed.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a microwave plasma processing apparatus according to one embodiment of the present invention.

FIG. 2 is a longitudinal sectional view showing a microwave plasma processing apparatus according to another embodiment of the present invention.

FIG. 3 is a plan view of the slot antenna in FIG. 2;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Processing room, 3 ... Discharge block, 4 ... Microwave introduction window, 5 ... Circular waveguide, 8 ... Sample stand, 10 ... Wafer, 13
... turbo molecular pump, 31 ... protective film, 33 ... heater, 5
3. Microwave tuning plate, 91, 92 ... solenoid coil.

──────────────────────────────────────────────────続 き Continuing on the front page (51) Int.Cl. ⁷ Identification code FI H01L 21/31 H01L 21/302 B (72) Inventor Kinmitsu Nitsumitsu 794, Higashitoyoi, Katsumatsu-shi, Yamaguchi Prefecture Hitachi, Ltd. Kasa Inside the factory (72) Inventor Hironobu Kawahara 794, Higashi-Toyoi, Kazamatsu City, Yamaguchi Prefecture Inside the Kasado Factory, Hitachi, Ltd. (72) Inventor Katsuyoshi Kudo 794, Higashi Toyoi, Kudamatsu City, Yamaguchi Prefecture Within Hitachi Kasado Engineering Co., Ltd. (56) References JP-A-7-142444 (JP, A) JP-A-4-133322 (JP, A) JP-A-5-283196 (JP, A) JP-A-3-140470 (JP, A) JP-A-3-170666 (JP, A) JP-A-4-96224 (JP, A) JP-A-2-14836 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H05H1 / 46 C23F 4/00 H01L 21/3065

Claims (3)

(57) [Claims] A processing chamber having a sample stage in which a substrate to be processed is disposed, a processing chamber having the sample table therein, and having an opening facing the substrate mounting surface of the sample stage; A discharge block having an inner surface that is attached to the outside of the opening and is tapered in the direction of the sample table with a hollow cylinder made of a nonmagnetic conductive material, and a microwave introduction window at the other end of the discharge block. a circular waveguide connected, the
Slot antenna and microphone provided in a circular waveguide
Microwave tuning consisting of black wave tuning plate
Tuning means for performing tuning , a solenoid coil provided outside the discharge block, gas supply means for supplying a processing gas into the discharge block, and vacuum exhaust means for depressurizing and exhausting the processing chamber to a predetermined pressure. A microwave plasma processing apparatus, comprising: 2. A processing chamber having a substrate on which a substrate to be processed is disposed, a processing chamber having the sample table therein, and having an opening opposed to the substrate mounting surface of the sample table; A discharge block having an inner surface that is attached to the outside of the opening and is tapered in the direction of the sample table with a hollow cylinder made of a nonmagnetic conductive material, and a microwave introduction window at the other end of the discharge block. a circular waveguide connected, the
Slot antenna and microphone provided in a circular waveguide
Microwave tuning consisting of black wave tuning plate
Tuning means for performing tuning , a solenoid coil provided outside the discharge block, gas supply means for supplying a processing gas into the discharge block, and vacuum exhaust means for depressurizing and exhausting the processing chamber to a predetermined pressure. A microwave plasma processing apparatus comprising: a protection member formed on an inner wall surface of the discharge block. 3. A sample stage on which a substrate to be processed is arranged, a processing chamber having the sample stage therein, and having an opening facing the surface of the sample stage on which the substrate to be processed is arranged; A discharge block having an inner surface that is attached to the outside of the opening and is tapered in the direction of the sample table with a hollow cylinder made of a nonmagnetic conductive material, and a microwave introduction window at the other end of the discharge block. a circular waveguide connected, the
Slot antenna and microphone provided in a circular waveguide
Microwave tuning consisting of black wave tuning plate
Tuning means for performing tuning , a solenoid coil provided outside the discharge block, gas supply means for supplying a processing gas into the discharge block, and vacuum exhaust means for depressurizing and exhausting the processing chamber to a predetermined pressure. A microwave plasma processing apparatus comprising: a heater capable of adjusting a temperature attached to the discharge block.