JPH0918029A - Thin film photoelectric converter - Google Patents
Thin film photoelectric converterInfo
- Publication number
- JPH0918029A JPH0918029A JP7162137A JP16213795A JPH0918029A JP H0918029 A JPH0918029 A JP H0918029A JP 7162137 A JP7162137 A JP 7162137A JP 16213795 A JP16213795 A JP 16213795A JP H0918029 A JPH0918029 A JP H0918029A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- regions
- substrate
- electrode layers
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜太陽電池のよう
に、基板上に積層した各層をパターニングして形成され
る複数の光電変換領域が各領域の電極層相互を接続する
ことによって直列あるいは並列接続される薄膜光電変換
装置に関する。BACKGROUND OF THE INVENTION The present invention relates to a thin film solar cell, in which a plurality of photoelectric conversion regions formed by patterning each layer laminated on a substrate are connected in series by connecting electrode layers in each region. The present invention relates to a thin film photoelectric conversion device connected in parallel.
【０００２】[0002]
【従来の技術】原料ガスのグロー放電分解や光ＣＶＤに
より形成される非晶質半導体薄膜は、気相成長法で形成
できるために、大面積化が容易であること、また、形成
温度が低いために樹脂フィルムのような可とう性を有す
る基板に形成できるという特徴を有している。こうした
非晶質薄膜を光電変換層に用いた薄膜光電変換装置は、
光電変換領域を直列に電気的に接続することにより取出
し電圧を設定している。あるいは、必要に応じて光電変
換領域を並列に電気的に接続することにより取出し電流
を設定している。このような直並列接続を行うには、薄
膜太陽電池を構成する各層を分離して複数の光電変換領
域にする必要がある。このような光電変換領域の寸法
は、光の入射側に設けられる透明電極層を形成するＳｎ
Ｏ2 やＺｎＯ等の透明導電性材料の膜のシート抵抗が高
いため限定される。これに対し、特開平６−３４２９２
４号公報に開示された薄膜光電変換装置では、反光入射
側にある絶縁性基板に穴をあけ、この穴を利用して透明
電極層を基板裏面の接続電極層と接続することにより、
高シート抵抗の透明電極層を流れる電流の径路の距離を
短縮できる。これにより寸法の限定された光電変換領域
に分割することなく低電圧、大電流型にも構成でき、ジ
ュール損失が少なく、デッドスペースの部分が縮小して
有効発電面積が増加した薄膜光電変換装置を得ることが
できた。そして各光電変換領域間の接続は、基板裏面の
接続電極層によって行う。図３は上記公報に図２５とし
て示されている直列接続型の薄膜光電変換領域である。
図３（ａ）は光入射側の平面図で、可とう性の絶縁性基
板１上に積層された金属第一電極層、非晶質半導体光電
変換層および透明第二電極層はレーザパターニングのパ
ターニングライン２１および２２により複数（図では６
個）の光電変換領域３に分離されている。各単位太陽電
池の両端部では第二電極層が除去されて斜線を引いて示
した光電変換層４が露出している。図３（ｂ）は基板裏
面側の平面図で、接続電極層となる金属第三電極層５が
レーザパターニングのパターニングライン６１および６
２により複数の領域に分離され、端部には長い接続領域
５１が形成されている。そして、この第三電極層５との
接続のために第一貫通孔７１と第二貫通孔７２が多数明
けられている。第一貫通孔７１は、単位太陽電池３の第
二電極層、光電変換層および第一電極層、可とう性基板
１ならびに第三電極層５を貫通しており、内部への電極
層の回り込みにより第二電極層と第三電極層とを接続す
るためのものである。第二貫通孔７２は第二電極層が除
去されて光電変換層４が露出している領域に明けられ、
光電変換層４、第一電極層、基板１および第三電極層５
を貫通しており、内部への電極層の回り込みにより第一
電極層と第三電極層とを接続するためのものである。表
面側のパターニングライン２２と裏面側のパターニング
ライン６２との位置、貫通孔７１、７２の位置が基板の
幅方向（図の上下方向）でずれていることにより、各光
電変換領域３は第二電極層は貫通孔７１、７２により第
三電極層５を介して隣接単位太陽電池の第一電極層と接
続される。その結果、基板幅方向に一列に並ぶ各光電変
換領域は直列接続され、各列間は第三電極層の接続領域
５１を介して接続される。2. Description of the Related Art An amorphous semiconductor thin film formed by glow discharge decomposition of a raw material gas or photo-CVD can be formed by a vapor phase growth method, so that its area can be easily increased and its formation temperature is low. Therefore, it has a feature that it can be formed on a flexible substrate such as a resin film. A thin film photoelectric conversion device using such an amorphous thin film as a photoelectric conversion layer is
The extraction voltage is set by electrically connecting the photoelectric conversion regions in series. Alternatively, the extraction current is set by electrically connecting the photoelectric conversion regions in parallel as needed. In order to perform such a series-parallel connection, it is necessary to separate each layer forming the thin film solar cell into a plurality of photoelectric conversion regions. The size of such a photoelectric conversion region is Sn that forms the transparent electrode layer provided on the light incident side.
It is limited because the sheet resistance of a film of a transparent conductive material such as O 2 or ZnO is high. On the other hand, JP-A-6-34292
In the thin-film photoelectric conversion device disclosed in Japanese Patent Publication No. 4, a hole is made in the insulating substrate on the side opposite to the light incident side, and the transparent electrode layer is connected to the connection electrode layer on the back surface of the substrate by using this hole,
The distance of the path of the current flowing through the transparent electrode layer having a high sheet resistance can be shortened. As a result, a thin-film photoelectric conversion device that can be configured as a low-voltage, large-current type without being divided into photoelectric conversion regions with limited dimensions, has a small Joule loss, and has a reduced dead space portion and an increased effective power generation area. I was able to get it. The connection between the photoelectric conversion regions is made by the connection electrode layer on the back surface of the substrate. FIG. 3 shows a series connection type thin film photoelectric conversion region shown as FIG. 25 in the above publication.
FIG. 3A is a plan view of the light incident side. The metal first electrode layer, the amorphous semiconductor photoelectric conversion layer, and the transparent second electrode layer, which are laminated on the flexible insulating substrate 1, are formed by laser patterning. Multiple patterning lines 21 and 22 (6 in the figure)
Individual photoelectric conversion regions 3. At both ends of each unit solar cell, the second electrode layer is removed and the photoelectric conversion layer 4 shown by hatching is exposed. FIG. 3B is a plan view of the back surface side of the substrate, in which the metal third electrode layer 5 serving as the connection electrode layer is patterned by the patterning lines 61 and 6 for laser patterning.
It is divided into a plurality of regions by 2, and a long connection region 51 is formed at the end. A large number of first through holes 71 and second through holes 72 are opened for connection with the third electrode layer 5. The first through hole 71 penetrates the second electrode layer, the photoelectric conversion layer and the first electrode layer of the unit solar cell 3, the flexible substrate 1 and the third electrode layer 5, and wraps around the electrode layer inside. Is for connecting the second electrode layer and the third electrode layer. The second through hole 72 is opened in a region where the second electrode layer is removed and the photoelectric conversion layer 4 is exposed,
Photoelectric conversion layer 4, first electrode layer, substrate 1 and third electrode layer 5
And is for connecting the first electrode layer and the third electrode layer by wrapping around the electrode layer. The positions of the patterning line 22 on the front surface side and the patterning line 62 on the back surface side, and the positions of the through holes 71 and 72 are deviated in the width direction of the substrate (vertical direction in the drawing), so that each photoelectric conversion region 3 has a second position. The electrode layer is connected to the first electrode layer of the adjacent unit solar cell via the third electrode layer 5 through the through holes 71 and 72. As a result, the photoelectric conversion regions arranged in a line in the substrate width direction are connected in series, and the columns are connected via the connection region 51 of the third electrode layer.
【０００３】[0003]
【発明が解決しようとする課題】図２のようにレーザパ
ターニングにより光電変換領域３の分離を行う光電変換
装置では，パターニングラインが交差する部分２０ある
いは６０において、後から交差して分離したパターニン
グラインの分離が不完全となり、不良が発生する場合が
あるという問題があった。このような不良は、特に電位
的に差のある隣接列の光電変換領域３の電極層間の短絡
を招く際、光電変換装置の出力特性に影響を与える。In the photoelectric conversion device for separating the photoelectric conversion region 3 by laser patterning as shown in FIG. 2, the patterning line which is crossed and separated later is formed at the portion 20 or 60 where the patterning line intersects. However, there is a problem that the separation may be incomplete and a defect may occur. Such a defect affects the output characteristics of the photoelectric conversion device, particularly when a short circuit occurs between the electrode layers of the photoelectric conversion regions 3 in the adjacent columns having a potential difference.
【０００４】本発明の目的は、上述の問題を解決し、パ
ターニングラインの交差する部分に不良が発生すること
のない薄膜光電変換装置を提供することにある。An object of the present invention is to solve the above-mentioned problems and to provide a thin film photoelectric conversion device in which no defects occur at the intersections of patterning lines.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めに、請求項１に記載の本発明は、絶縁性基板の表面上
に電極層ではさまれた光電変換層を形成し、各層を異な
る二つの方向に平行に線状に除去して複数の光電変換領
域に分離し、隣接光電変換領域の電極層相互間を導体に
よって接続してなる薄膜光電変換装置において、各層の
線状除去領域の交差する個所に基板を含めての貫通孔を
有するものとする。請求項２に記載の第二の本発明は、
絶縁性基板の表面上に電極層ではさまれた光電変換層を
備えた光電変換領域の複数個と、基板の裏面上に被着し
た導体層を異なる二つの方向に平行に線状に除去して形
成される複数の接続電極層とを有し、隣接光電変換領域
の電極層相互間が、基板に明けられた貫通孔を通して基
板表面上の電極層のいずれかと接続される接続電極層に
よって接続される薄膜光電変換装置において、導体層の
線状除去領域の交差する個所に基板を含めての貫通孔を
有するものとする。これらの場合、絶縁性基板の表面あ
るいは裏面上の介の線状除去領域の交差する個所の基板
を含めての貫通孔が打抜きで明けられたものであること
がよい。請求項４に記載の第三の本発明は、絶縁性基板
の表面上に電極層ではさまれた光電変換層を形成し、各
層を異なる二つの方向に平行に線状に除去して複数の光
電変換領域に分離し、隣接光電変換領域の電極層相互間
を導体によって接続してなる薄膜光電変換装置におい
て、一方向の線状除去領域は二つの光電変換領域間に３
本以上形成され、他方向の線状除去領域は、一方向の線
状除去領域の外側の２本に交差するが、内側の線状除去
領域には交差しないように断続的に形成されたものとす
る。その場合、一方向の線状除去領域は、他方向の線状
除去領域によって分離され、直列接続される光電変換領
域の列間を分離をするものであることがよい。請求項６
に記載された第四の本発明は、絶縁性基板の表面上に電
極層ではさまれた光電変換層を備えた光電変換領域の複
数個と、基板の裏面上に被着した導体層を異なる二つの
方向に平行に線状に除去して形成される複数の接続電極
層とを有し、隣接光電変換領域の電極層相互間が、基板
に明けられた貫通孔を通して基板表面上の電極層のいず
れかと接続される接続電極層によって接続される薄膜光
電変換装置において、一方向の線状除去領域は二つの接
続電極層間に３本以上形成され、他方向の線状除去領域
は、一方向の線状除去領域の外側の２本に交差するが、
内側の線状除去領域には交差しないように断続的に形成
されたものとする。その場合、一方向の線状除去領域
は、他方向の線状除去領域によって分離され、基板表面
上に一列に配置された光電変換領域を直列接続する接続
電極層の列間を分離するものであることがよい。In order to achieve the above-mentioned object, the present invention according to claim 1 forms a photoelectric conversion layer sandwiched by electrode layers on the surface of an insulating substrate. In a thin film photoelectric conversion device, which is linearly removed in two different directions to be separated into a plurality of photoelectric conversion regions, and the electrode layers of adjacent photoelectric conversion regions are connected by a conductor, a linear removal region of each layer Through holes including the substrate are to be provided at the intersections of. The second invention according to claim 2 is
A plurality of photoelectric conversion regions each having a photoelectric conversion layer sandwiched between electrode layers on the surface of an insulating substrate and a conductor layer deposited on the back surface of the substrate are removed linearly in two different directions. A plurality of connection electrode layers formed by connecting the electrode layers in the adjacent photoelectric conversion region to each other through a through hole formed in the substrate and connected to one of the electrode layers on the substrate surface. In the thin-film photoelectric conversion device described above, through holes including the substrate are provided at the intersections of the linear removal regions of the conductor layer. In these cases, it is preferable that the through hole including the substrate at the intersection of the linear removal regions on the front surface or the back surface of the insulating substrate is punched out. According to a third aspect of the present invention, a photoelectric conversion layer sandwiched by electrode layers is formed on the surface of an insulating substrate, and each layer is linearly removed in two different directions to form a plurality of layers. In a thin film photoelectric conversion device that is divided into photoelectric conversion regions and electrode layers of adjacent photoelectric conversion regions are connected by a conductor, the linear removal region in one direction is 3 between two photoelectric conversion regions.
More than two lines are formed, and the linear removal region in the other direction intersects two lines outside the linear removal region in one direction, but is formed intermittently so as not to intersect the linear removal region inside. And In that case, it is preferable that the linear removal regions in one direction are separated by the linear removal regions in the other direction to separate the columns of the photoelectric conversion regions connected in series. Claim 6
The fourth aspect of the present invention is different from the plurality of photoelectric conversion regions provided with a photoelectric conversion layer sandwiched by an electrode layer on the surface of an insulating substrate, and a conductor layer deposited on the back surface of the substrate. A plurality of connection electrode layers formed by removing linearly in parallel with two directions, and an electrode layer on the surface of the substrate through a through hole formed in the substrate between electrode layers in adjacent photoelectric conversion regions. In the thin film photoelectric conversion device connected by the connection electrode layer connected to any one of the two, one or more linear removal regions in one direction are formed between two connection electrode layers, and the linear removal regions in the other direction are in one direction. Crosses the two outside of the linear removal area of
It is assumed that the inner linear removal region is intermittently formed so as not to intersect. In that case, the linear removal regions in one direction are separated by the linear removal regions in the other direction, and the photoelectric conversion regions arranged in a line on the substrate surface are separated between the columns of the connection electrode layers that are connected in series. Good to have.
【０００６】[0006]
【作用】絶縁性基板の表面上に積層した各層を分離して
光電変換領域にするため、あるいは裏面上に被着した導
体層を分離して接続電極層とするための線状除去領域、
すなわちパターニングラインの交差個所に基板を含めて
の貫通孔を明ければ、その部分での層がなくなるため、
分離の不良がなくなる。この貫通孔は、特にフィルム基
板を用いる場合に打ち抜きにより容易に明けることがで
きる。あるいは、一方向のパターニングラインを３本以
上形成し、外側の２本には他方向のパターニングライン
を交差させる。しかし、内側のパターニングラインは他
方向のパターニングラインと交差させないため、交差個
所に不良が生じても、内側のパターニングラインにより
分離が確保される。ただし、他方向のパターニングライ
ンによる分離不良は残るおそれがあるので、他方向のパ
ターニングラインによる分離は、不良の影響の少ない直
接接続される電位差の少ない隣接光電変換領域間あるい
はその接続に用いる接続電極層間の分離に適用すること
が望まれる。A linear removal area for separating each layer laminated on the front surface of the insulating substrate into a photoelectric conversion area or for separating a conductor layer deposited on the back surface into a connection electrode layer,
In other words, if the through hole including the substrate is exposed at the intersection of the patterning lines, the layer at that part will be lost,
There is no separation defect. This through hole can be easily opened by punching, especially when a film substrate is used. Alternatively, three or more patterning lines in one direction are formed, and patterning lines in the other direction intersect with the outer two. However, since the inner patterning line does not cross the patterning line in the other direction, even if a defect occurs at the crossing point, the inner patterning line ensures the separation. However, since a separation defect due to the patterning line in the other direction may remain, the separation due to the patterning line in the other direction is directly connected to the photoelectric conversion regions having a small potential difference and having a small influence of the defect. It is desired to be applied to separation between layers.
【０００７】[0007]
【実施例】以下、図を引用して本発明の実施例について
説明する。図２は、本発明の実施例の薄膜光電変換装置
の可とう性基板上に形成される薄膜のみを示し（ａ）は
光入射面、（ｂ）は裏面の平面図で、図３と共通の部分
には同一の符号が付されている。この薄膜光電変換装置
では、１５個の光電変換領域３が直列接続されている。
各光電変換領域列の端部には、同一の層構成であるが幅
の狭い領域が接続領域３１として形成されている。表面
の光電変換領域を接続するために、裏面には１５個の接
続電極５と各列端部の幅の狭い接続領域５１が形成され
ている。表面側のパターニングライン２１は裏面側のパ
ターニングライン６１とそれぞれ表裏で対向する位置に
加工される。一方、図の左右方向のパターニングライン
２２は、隣の列の光電変換領域３の裏面側で第三電極層
５を分離するパターニングライン６２の延長線と表裏で
対向する位置に加工される。従ってパターニングライン
２１、２２の交点とパターニングライン６１、６２の交
点とは表裏で対向している。図２のＡ部およびＢ部の拡
大図である図１（ａ）、（ｂ）に示すように、本発明の
一実施例では、両面がレーザパターニング終了後、この
パターニングラインの交点にパンチにより絶縁孔８を明
ける。この実施例では各パターニングラインの幅は約２
００μｍ、絶縁孔８の直径は５００μｍであるがこれに
限定されるものではない。またこの実施例では、表裏の
パターニングラインの交点が対向しているが、必ずしも
対向していなくてもよい。表裏それぞれのパターニング
ラインの交点に別個に絶縁孔８を明けても差し支えな
い。ただし図のようにパターニングすることにより、
３．７ｍｍのピッチで基板幅方向に３個ずつ明けられる
第一貫通孔７１と、同様に３．７ｍｍのピッチで基板幅
方向に２個ずつ明けられる第二貫通孔７２とは、基板長
手方向には別の列に位置するため、同種の貫通孔を同一
加工治具を用いて基板長手方向に連続して加工でき、作
業能率が高くなる。Embodiments of the present invention will be described below with reference to the drawings. 2A and 2B show only a thin film formed on a flexible substrate of a thin film photoelectric conversion device according to an embodiment of the present invention, FIG. 2A is a plan view of a light incident surface, and FIG. The same reference numerals are attached to the parts. In this thin film photoelectric conversion device, 15 photoelectric conversion regions 3 are connected in series.
A region having the same layer structure but a narrow width is formed as a connection region 31 at the end of each photoelectric conversion region row. In order to connect the photoelectric conversion regions on the front surface, 15 connection electrodes 5 and narrow connection regions 51 at the ends of each column are formed on the back surface. The patterning line 21 on the front surface side is processed at a position facing the patterning line 61 on the back surface side on the front and back sides, respectively. On the other hand, the patterning line 22 in the left-right direction in the figure is processed at a position facing the extension line of the patterning line 62 for separating the third electrode layer 5 on the back surface side of the photoelectric conversion region 3 in the adjacent column on the front and back sides. Therefore, the intersection of the patterning lines 21 and 22 and the intersection of the patterning lines 61 and 62 face each other on the front and back. As shown in FIGS. 1 (a) and 1 (b), which are enlarged views of portions A and B of FIG. 2, in one embodiment of the present invention, after both sides of the laser patterning, punching is performed at the intersection of the patterning lines. Open the insulating hole 8. In this embodiment, the width of each patterning line is about 2
The diameter of the insulating hole 8 is 00 μm and the diameter of the insulating hole 8 is 500 μm, but the diameter is not limited to this. Further, in this embodiment, the intersections of the front and back patterning lines face each other, but they do not necessarily have to face each other. The insulating holes 8 may be separately formed at the intersections of the patterning lines on the front and back sides. However, by patterning as shown in the figure,
The first through-holes 71, which are opened three at a pitch of 3.7 mm in the substrate width direction, and the second through-holes 72, which are similarly opened two at a pitch of 3.7 mm in the substrate width direction, are the substrate longitudinal direction. Since they are located in different rows, through holes of the same kind can be continuously processed in the substrate longitudinal direction by using the same processing jig, and the work efficiency becomes high.
【０００８】図４（ａ）、（ｂ）は、本発明の別の実施
例の薄膜光電変換装置の図２のＡ部およびＢ部の拡大図
である。この場合直列接続される隣接光電変換領域３を
分離するパターニングライン２２は図１と同様である
が、直列接続される光電変換領域３の各列を分離するパ
ターニングライン２１の代わりに３本のパターニングラ
イン２３、２４、２５を加工する。裏面側でもパターニ
ングライン６１の代わりにて３本のパターニングライン
６３、６４、６５を加工する。これらの加工は、基板の
長手方向に平行なパターニングライン２２、６２の加工
のあとで行い、両側のパターニングライン２３、２５お
よび６３、６５は、パターニングライン２２および６２
と交差するが、中央のパターニングライン２４、６４は
これらと交差しない。この結果、電位の差の多い各列の
光電変換領域３を分離する基板幅方向のパターニングラ
インを基板長手方向のパターニングラインの加工のあと
で加工することによって交差部分に不良が生じても、中
央に健全なパターニングライン２４、６４が存在するこ
とにより分離に支障がない。電位の差の少ない隣接光電
変換領域を分離するパターニングライン２２、６２に不
良が生じても、その影響は小さい。この実施例ではパタ
ーニングラインが３本であるが、４本以上加工し、外側
の２本のみを他方向のパターニングラインと交差させて
もよい。上記の実施例では、基板の両面においていずれ
もパターニングラインの交差個所における分離不良を絶
縁孔を明ける方法で防ぐか、あるいは３本以上のパター
ニングラインを形成する方法で防いでいるが、両面にお
いてそれらの別個の方法で組み合わせて実施してもよ
い。FIGS. 4A and 4B are enlarged views of a portion A and a portion B of FIG. 2 of the thin film photoelectric conversion device according to another embodiment of the present invention. In this case, the patterning line 22 for separating the adjacent photoelectric conversion regions 3 connected in series is the same as that in FIG. 1, but three patterning lines are used instead of the patterning line 21 for separating each column of the photoelectric conversion regions 3 connected in series. The lines 23, 24 and 25 are processed. Also on the back surface side, three patterning lines 63, 64, 65 are processed instead of the patterning line 61. These processes are performed after the patterning lines 22 and 62 parallel to the longitudinal direction of the substrate are processed, and the patterning lines 23, 25 and 63 and 65 on both sides are patterned.
But the central patterning lines 24, 64 do not intersect with them. As a result, even if a patterning line in the substrate width direction that separates the photoelectric conversion regions 3 in each column having a large potential difference is processed after processing the patterning line in the substrate longitudinal direction, even if a defect occurs at the intersection, The existence of sound patterning lines 24 and 64 does not hinder the separation. Even if a defect occurs in the patterning lines 22 and 62 that separate the adjacent photoelectric conversion regions having a small potential difference, the effect thereof is small. Although there are three patterning lines in this embodiment, four or more patterning lines may be processed so that only the outer two lines intersect the patterning lines in the other direction. In the above-mentioned embodiments, the separation failure at the intersection of the patterning lines on both sides of the substrate is prevented by the method of forming the insulating holes or the method of forming three or more patterning lines. Alternatively, the methods may be combined in different ways.
【０００９】また上記の実施例では、分離された光電変
換領域の接続を基板裏面側の接続電極を用いているが、
基板裏面上で導電テープなどを用いて接続される光電変
換領域の分離にも本発明を実施することができる。Further, in the above-mentioned embodiment, the connection of the separated photoelectric conversion regions uses the connection electrode on the back surface side of the substrate.
The present invention can also be applied to the separation of photoelectric conversion regions that are connected on the back surface of the substrate using a conductive tape or the like.
【００１０】[0010]
【発明の効果】本発明によれば、パターニングラインの
交差個所に生ずる分離不良を交差個所を貫通する絶縁孔
を明けることによって無くすことができる。あるいは、
一方向には３本以上のパターニングラインを形成して内
側に他方向のパターニングラインと交差しないものを残
すことにより無くすことができる。これにより、少なく
とも一方の方向のパターニングラインによる分離不良は
防止でき、電位差の大きい領域間の分離を保持すること
ができる。この結果、薄膜光電変換装置、特にフィルム
基板を用いた薄膜太陽電池の分離不良による良品率の低
下を防ぐことが可能になった。According to the present invention, the separation failure occurring at the intersection of the patterning lines can be eliminated by forming the insulating hole penetrating the intersection. Or,
This can be eliminated by forming three or more patterning lines in one direction and leaving inside one that does not intersect with the patterning lines in the other direction. Thus, it is possible to prevent the separation failure due to the patterning line in at least one direction, and it is possible to maintain the separation between the regions having a large potential difference. As a result, it has become possible to prevent a reduction in the non-defective rate due to poor separation of a thin film photoelectric conversion device, particularly a thin film solar cell using a film substrate.
【図１】本発明の一実施例の薄膜光電変換装置における
図２のＡ部、Ｂ部に対応する部分を拡大して（ａ）、
（ｂ）に示す平面図FIG. 1 is an enlarged view (a) of a portion corresponding to portions A and B in FIG. 2 in a thin film photoelectric conversion device according to an embodiment of the present invention.
Plan view shown in (b)
【図２】本発明の実施される薄膜光電変換装置の基板上
の薄膜のみを示す（ａ）は表面側の平面図、（ｂ）は裏
面側の平面図2A and 2B are plan views of a front surface side and FIG. 2B are plan views of a back surface side, respectively, showing only a thin film on a substrate of a thin film photoelectric conversion device embodying the present invention.
【図３】従来の薄膜光電変換装置一例を示し（ａ）は表
面側の平面図、（ｂ）は裏面側の平面図3A and 3B show an example of a conventional thin-film photoelectric conversion device, FIG. 3A is a plan view of a front surface side, and FIG.
【図４】本発明の別の実施例の薄膜光電変換装置におけ
る図２のＡ部、Ｂ部に対応する部分を拡大して（ａ）、
（ｂ）に示す平面図FIG. 4 is an enlarged view of a portion corresponding to portions A and B of FIG. 2 in a thin film photoelectric conversion device of another embodiment of the present invention (a),
Plan view shown in (b)
２１、２２、２３、２４、２５ パターニングライン ３ 光電変換領域 ４ 光電変換層 ５ 第三電極層 ６１、６２、６３、６４、６５ パターニングライン ７１ 第一貫通孔 ７２ 第二貫通孔 ８ 絶縁孔 21, 22, 23, 24, 25 Patterning line 3 Photoelectric conversion region 4 Photoelectric conversion layer 5 Third electrode layer 61, 62, 63, 64, 65 Patterning line 71 First through hole 72 Second through hole 8 Insulating hole
Claims (7)
光電変換層を形成し、各層を異なる二つの方向に平行に
線状に除去して複数の光電変換領域に分離し、隣接光電
変換領域の電極層相互間を導体によって接続してなる薄
膜光電変換装置において、各層の線状除去領域の交差す
る個所に基板を含めての貫通孔を有することを特徴とす
る薄膜光電変換装置。1. A photoelectric conversion layer sandwiched by electrode layers is formed on the surface of an insulating substrate, and each layer is linearly removed in parallel in two different directions to separate it into a plurality of photoelectric conversion regions. A thin film photoelectric conversion device in which electrode layers of a photoelectric conversion region are connected by a conductor, wherein through holes including a substrate are provided at intersections of linear removal regions of each layer. .
光電変換層を備えた光電変換領域の複数個と、基板の裏
面上に被着した導体層を異なる二つの方向に平行に線状
に除去して形成される複数の接続電極層とを有し、隣接
光電変換領域の電極層相互間が、基板に明けられた貫通
孔を通して基板表面上の電極層のいずれかと接続される
接続電極層によって接続される薄膜光電変換装置におい
て、導体層の線状除去領域の交差する個所に基板を含め
ての貫通孔を有することを特徴とする薄膜光電変換装
置。2. A plurality of photoelectric conversion regions each having a photoelectric conversion layer sandwiched between electrode layers on the surface of an insulating substrate and a conductor layer deposited on the back surface of the substrate are parallel to two different directions. A plurality of connection electrode layers formed by linearly removing the electrode layers of adjacent photoelectric conversion regions are connected to any of the electrode layers on the substrate surface through through holes formed in the substrate. A thin film photoelectric conversion device connected by a connection electrode layer, having through holes including a substrate at intersections of linear removal regions of a conductor layer.
状除去領域の交差する個所の基板を含めての貫通孔が打
抜きで明けられたものである請求項１あるいは２記載の
薄膜光電変換装置。3. The thin-film photoelectric conversion device according to claim 1, wherein the through hole including the substrate at the intersection of the linear removal regions of the layer on the front or back surface of the insulating substrate is punched out. Converter.
光電変換層を形成し、各層を異なる二つの方向に平行に
線状に除去して複数の光電変換領域に分離し、隣接光電
変換領域の電極層相互間を導体によって接続してなる薄
膜光電変換装置において、一方向の線状除去領域は二つ
の光電変換領域間に３本以上形成され、他方向の線状除
去領域は、一方向の線状除去領域の外側の２本に交差す
るが、内側の線状除去領域には交差しないように断続し
て形成されたことを特徴とする薄膜光電変換装置。4. A photoelectric conversion layer sandwiched between electrode layers is formed on the surface of an insulating substrate, and each layer is linearly removed in parallel in two different directions to separate into a plurality of photoelectric conversion regions, which are adjacent to each other. In a thin film photoelectric conversion device in which electrode layers in a photoelectric conversion region are connected by conductors, three or more linear removal regions in one direction are formed between two photoelectric conversion regions, and linear removal regions in the other direction are formed. A thin film photoelectric conversion device, characterized in that the thin film photoelectric conversion device is formed so as to intersect two lines outside the one-direction linear removal region but not to intersect the one inside linear removal region.
去領域によって分離され、直列接続される光電変換領域
の列間を分離するものである請求項４記載の薄膜光電変
換装置。5. The thin-film photoelectric conversion device according to claim 4, wherein the linear removal region in one direction is separated by the linear removal region in the other direction to separate columns of photoelectric conversion regions connected in series. .
光電変換層を備えた光電変換領域の複数個と、基板の裏
面上に被着した導体層を異なる二つの方向に平行に線状
に除去して形成される複数の接続電極層とを有し、隣接
光電変換領域の電極層相互間が、基板に明けられた貫通
孔を通して基板表面上の電極層のいずれかと接続される
接続電極層によって接続される薄膜光電変換装置におい
て、一方向の線状除去領域は二つの接続電極層間に３本
以上形成され、他方向の線状除去領域は、一方向の線状
除去領域の外側の２本に交差するが、内側の線状除去領
域には交差しないように断続して形成されたことを特徴
とする薄膜光電変換装置。6. A plurality of photoelectric conversion regions each having a photoelectric conversion layer sandwiched by electrode layers on the surface of an insulating substrate and a conductive layer deposited on the back surface of the substrate are parallel to two different directions. A plurality of connection electrode layers formed by linearly removing the electrode layers of adjacent photoelectric conversion regions are connected to any of the electrode layers on the substrate surface through through holes formed in the substrate. In a thin film photoelectric conversion device connected by a connection electrode layer, three or more linear removal regions in one direction are formed between two connection electrode layers, and linear removal regions in the other direction are linear removal regions in one direction. A thin film photoelectric conversion device, characterized in that the thin film photoelectric conversion device is formed so as to intersect two outside lines, but not to intersect the inside linear removal region.
去領域によって分離され、基板表面上に一列に配置され
た光電変換領域を直列接続する接続電極層の列間を分離
するものである請求項６記載の薄膜光電変換装置。7. The linear removal region in one direction is separated by the linear removal region in the other direction, and the photoelectric conversion regions arranged in a line on the substrate surface are separated between columns of connection electrode layers connected in series. The thin film photoelectric conversion device according to claim 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16213795A JP3237471B2 (en) | 1995-06-28 | 1995-06-28 | Thin-film photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16213795A JP3237471B2 (en) | 1995-06-28 | 1995-06-28 | Thin-film photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0918029A true JPH0918029A (en) | 1997-01-17 |
| JP3237471B2 JP3237471B2 (en) | 2001-12-10 |
Family
ID=15748749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16213795A Expired - Fee Related JP3237471B2 (en) | 1995-06-28 | 1995-06-28 | Thin-film photoelectric conversion device |
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| Country | Link |
|---|---|
| JP (1) | JP3237471B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010098467A1 (en) * | 2009-02-27 | 2010-09-02 | 京セラ株式会社 | Photoelectric conversion module and method of producing same |
-
1995
- 1995-06-28 JP JP16213795A patent/JP3237471B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010098467A1 (en) * | 2009-02-27 | 2010-09-02 | 京セラ株式会社 | Photoelectric conversion module and method of producing same |
| JP5283749B2 (en) * | 2009-02-27 | 2013-09-04 | 京セラ株式会社 | Photoelectric conversion module and manufacturing method thereof |
| US8941160B2 (en) | 2009-02-27 | 2015-01-27 | Kyocera Corporation | Photoelectric conversion module and method of manufacturing the same |
| EP2403007A4 (en) * | 2009-02-27 | 2017-08-02 | Kyocera Corporation | Photoelectric conversion module and method of producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3237471B2 (en) | 2001-12-10 |
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