JPS62203387A - Manufacture of amorphous photovoltaic power generation element module - Google Patents

Manufacture of amorphous photovoltaic power generation element module

Info

Publication number
JPS62203387A
JPS62203387A JP61045392A JP4539286A JPS62203387A JP S62203387 A JPS62203387 A JP S62203387A JP 61045392 A JP61045392 A JP 61045392A JP 4539286 A JP4539286 A JP 4539286A JP S62203387 A JPS62203387 A JP S62203387A
Authority
JP
Japan
Prior art keywords
amorphous
amorphous photovoltaic
power generation
generation element
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61045392A
Other languages
Japanese (ja)
Inventor
Norihiko Inuzuka
犬塚 敬彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61045392A priority Critical patent/JPS62203387A/en
Publication of JPS62203387A publication Critical patent/JPS62203387A/en
Pending legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE:To eliminate the need for connecting leads, equip a photovoltaic power generation element with an enlarged effective area, and to realize a high-efficiency module by a method wherein a single-body amorphous photovoltaic power generation element including a multiplicity of comb-type collecting electrodes is separated into individual pieces and the resultant photovoltaic power generation elements are piled one upon another. CONSTITUTION:An amorphous film 13 provided with a PIN junction is formed on a wide, lengthy stainless steel substrate 12 and, on the amorphous film 13, a transparent electrode film 14 is formed. Next, on the transparent electrode film 14, numerous comb-type collecting electrodes 15 are formed one after another at a prescribed interval along the direction of length, for the formation of a single-body amorphous photovoltaic power generation element 11. Further, the power generation element 11 is separated into individual amorphous photovoltaic power generation elements 11A, 11B, etc., each containing an electrode 15. Stacking is so accomplished that the electrode 15 of each of the separated power generation elements 11A, 11B, etc., may be in contact with a substrate 11 of a next power generation element 11. This results in an enlarged power generation element module effective area without using connecting leads.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、金属基板を用いた非晶質光発電素子モジエ
ールの製造方法に関するものである、〔従来の技術〕 第3図は例えば電力用の非晶質先発′醍素子モジュール
に使用される10cm×10cmの金属基板型非晶質光
発電素子を示したもので、第3図fatは正面図そして
第3図+blは断面図である。図に〉いて、(ハは非晶
質光発電素子、(=)はこの光発電素子(ハの金属基板
としてのステンレス基板、(3)はこのステンレス基板
(コ)上に形成された、非晶質光発電素子(ハのPIN
接合部、(qlはこのPIN接合部(3)上て形成され
た透明電極、(51はこの透明電極(り)上に形成され
かつ第3図fatに示した形状を有する集電極である。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing an amorphous photovoltaic device module using a metal substrate. [Prior Art] FIG. This figure shows a 10 cm x 10 cm metal substrate type amorphous photovoltaic device used in the amorphous original device module, in which Figure 3 (fat) is a front view and Figure 3 (+bl) is a cross-sectional view. In the figure, (C) is an amorphous photovoltaic device, (=) is a stainless steel substrate as a metal substrate for this photovoltaic device (C), and (3) is a non-crystalline photovoltaic device formed on this stainless steel substrate (C). Crystalline photovoltaic element (PIN of HA)
The junction part (ql) is a transparent electrode formed on this PIN junction part (3), and (51 is a collector electrode formed on this transparent electrode (ri) and having the shape shown in FIG. 3 fat).

このような非晶質先発1を素子(ハは予め所定の寸法に
切断されたステンレス基板(2)を用いて作られる。な
お、(コa)はステンレス基板L21の一部である。
Such an amorphous starting material 1 is used as an element (C is a stainless steel substrate (2) cut to a predetermined size in advance. (Co a) is a part of the stainless steel substrate L21.

第9図は第3図に示した非晶質光発電素子(ハを多数用
いて作られた電力用非晶質光発電素子モジュールにおけ
る非晶質光発電素子(ハの配置および接続を示す図であ
る。
Figure 9 is a diagram showing the arrangement and connection of amorphous photovoltaic elements (C) in a power amorphous photovoltaic element module made using a large number of amorphous photovoltaic elements (C) shown in Figure 3. It is.

第り図に示した7個の非晶質光発電素子モジュールは例
えば横す列、縦/コ列合計≠S枚の非晶質光発電素子(
ハから成り右側2列の非晶質光発電素子(ハと左側2列
の非晶質光発電素子(ハとが互いに逆の向きに配列され
ている。、(41は集電極Ctlとステンレス基板(2
)の一部(Ua)との接続だ用いられる薄い平角のリー
ド線であって、タブリードと呼ばれる。
For example, the seven amorphous photovoltaic device modules shown in the figure have a total of ≠ S amorphous photovoltaic devices (
The amorphous photovoltaic elements in two rows on the right (C) and the amorphous photovoltaic elements (C) in two rows on the left are arranged in opposite directions. (41 is the collector electrode Ctl and the stainless steel substrate (2
) is a thin rectangular lead wire used for connection with the part (Ua) of the wire, and is called a tab lead.

次に第9図におけるur枚の光発電素子相互間の電気的
接続の仕方について説明する、ステンレス基板は非晶質
光発電素子(ハを成膜する際にその−1(2a)がマス
ク(図示しない)で予めじゃ蔽されることによって上述
のP工N接合部および透明電極が成膜しないようKしで
あるので、ステンレス基板の一部(2a)と集電極(j
lは逆の極性を有している。
Next, we will explain how to electrically connect the ur photovoltaic elements in FIG. (not shown) to prevent the above-mentioned P-N junction and transparent electrode from forming a film.
l has opposite polarity.

このように構成された電力用非晶質光発電素子モジュー
ルにおいては、右−列、左−列の先頭の非晶質光発電素
子同士をリード線(6)で並列に接続すると共に、縦方
向に隣接する非晶質光発電素子(ハの互いに異なる極性
同士を示示のように直列に接続してゆき、最下端のψ枚
の非晶質光発電素子(ハにおいては中央の2枚の非晶質
光発電素子(ハ同±および両性側の2枚の非晶質光発電
素子(ハ同士を直列に接続することによって2直列コ並
列接続となるので、非晶質光発電素子モジュールはその
受光面に太陽などの光が照射されると■θ端子間に電気
出力を取り出せるように構成されている、〔発明が解決
しようとする問題点〕 非晶質光発電素子は単結晶素子や多結晶素子と異って例
えばプラズマC’VD法で大面積の素子に製造できるこ
とが7つの特徴である。しかしながら。
In the power amorphous photovoltaic device module configured as described above, the amorphous photovoltaic devices at the top of the right column and left column are connected in parallel with each other with lead wires (6), and The amorphous photovoltaic elements (in C) with different polarities adjacent to each other are connected in series as shown, and the lowest ψ amorphous photovoltaic elements (in C, the two central By connecting two amorphous photovoltaic devices (C) in series, a crystalline photovoltaic device (C) and two amorphous photovoltaic devices (C) on both sides will be connected in parallel, so the amorphous photovoltaic device module is [Problem to be solved by the invention] Amorphous photovoltaic elements are constructed so that when light from the sun or other sources is irradiated onto the light-receiving surface, an electric output can be taken out between the θ terminals. However, one of the seven characteristics of this device is that it can be manufactured into a large-area device using, for example, plasma C'VD method, unlike a crystal device.

薄膜素子であるため、単一素子で大面積化して大電流を
流すことができないので、従来の金属基板型非晶質光発
電素子およびそのモジュールは上述したように構成され
ており、多数の非晶質光発電素子を隣接するもの同士が
互いに接触しないように所定の絶縁間隔をあげて配列す
ると共に非晶質光発電素子間をリード線で接続してゆか
なければならないから、非晶質光発電素子モジュールの
組立てに人手と多くの時間を必要とする上、光発電に有
効な非晶質光発電素子のモジュール中での面積率も悪く
、また非晶質光発電素子の寸法が予め決っているので用
途に応じた寸法の七ジュールを作りたい場合に非晶質光
発電素子の寸法による制約を受けるという問題点があっ
た。
Since it is a thin film element, it is not possible to increase the area and flow a large current with a single element. Therefore, conventional metal substrate type amorphous photovoltaic elements and their modules are constructed as described above, and a large number of non-crystalline photovoltaic elements are used. Crystalline photovoltaic elements must be arranged with a predetermined insulation interval so that adjacent ones do not come into contact with each other, and lead wires must be used to connect the amorphous photovoltaic elements. Assembling a power generation element module requires manpower and a lot of time, and the area ratio of the amorphous photovoltaic element in the module, which is effective for photovoltaic power generation, is poor, and the dimensions of the amorphous photovoltaic element are not predetermined. Therefore, there is a problem in that when it is desired to produce 7 joules with a size suitable for the application, there is a restriction due to the size of the amorphous photovoltaic element.

この発明は上述したような問題点を解決するためになさ
れたもので、非晶質光発電素子が形成される基板を用途
に応じた寸法に加工できると共だ、リード線を用いるこ
となく非晶質光発電素子間の電気的接続を行うことがで
き、かつモジュールの表面積に占める非晶質光発電素子
の占有面積率を向上させるようにした非晶質光発電素子
モジュールの製造方法を得ることを目的とする。
This invention was made to solve the above-mentioned problems, and it is possible to process the substrate on which the amorphous photovoltaic element is formed into a size suitable for the application, and also to process the substrate on which the amorphous photovoltaic element is formed into a non-crystalline photovoltaic device without using lead wires. Provided is a method for manufacturing an amorphous photovoltaic device module that enables electrical connection between crystalline photovoltaic devices and improves the ratio of the area occupied by the amorphous photovoltaic device to the surface area of the module. The purpose is to

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る非晶質光発電素子モジュールの製造方法
は、長尺合端基板の上にまず非晶質光発電素子膜を次い
でその上に透明電極膜を形成したのちこの透明電極膜上
に必要な寸法に合わせた多数の櫛形集電極を形成して一
体型非晶質先発1を素子を形成する工程と、この一体型
非晶質光発電素子を所定の寸法に切断して個別の非晶質
光発電素子を形成する工程と切断された1つの非晶質光
発電素子の櫛形集電極と次の非晶質光発電素子の金属基
板とを重ね合わせて電気的に接続することにより、個別
の非晶質光発電素子を電気的に直列接続する工程とを含
んだものである。
The method for manufacturing an amorphous photovoltaic device module according to the present invention includes first forming an amorphous photovoltaic device film on a long jointed end substrate, then forming a transparent electrode film thereon, and then forming a transparent electrode film on the transparent electrode film. The process includes forming a large number of comb-shaped collector electrodes according to the required dimensions to form an integrated amorphous photovoltaic element, and cutting this integrated amorphous photovoltaic element into predetermined dimensions to form individual non-crystalline photovoltaic elements. The step of forming a crystalline photovoltaic device and the comb-shaped collector electrode of one cut amorphous photovoltaic device and the metal substrate of the next amorphous photovoltaic device are overlapped and electrically connected. This method includes the step of electrically connecting individual amorphous photovoltaic elements in series.

〔作 用〕[For production]

この発明においては、長尺金属基板上て一体型非晶質光
発電素子を直接形成し、あとで目的に応じた寸法に非晶
質光発電素子を加工するので非晶質素子成膜時の基板の
配列、取付けに要する手間が省けるばかりでな、く、極
めて簡単な手段によって非晶質光発電素子間の接続が行
えるので非晶質光発電素子間の電気的接続箇所が減少し
て手間が大幅に減少する。また、非晶質光発電素子間の
絶縁空間も不要であるのでモジエール当りの光発電変換
効率も向上する。
In this invention, an integrated amorphous photovoltaic device is directly formed on a long metal substrate, and the amorphous photovoltaic device is later processed into dimensions according to the purpose. Not only does it save you the trouble of arranging and mounting the substrates, but it also allows you to connect the amorphous photovoltaic elements using an extremely simple method, which reduces the number of electrical connections between the amorphous photovoltaic elements and saves you time. is significantly reduced. Furthermore, since no insulation space is required between the amorphous photovoltaic elements, the photovoltaic conversion efficiency per module is also improved.

〔実施例〕〔Example〕

以下、この発明の一実施例を第1図および第2図につい
て説明する。第1図はこの発明に基づいて長尺金属基板
上に作られた一体型非晶質光発電素子の正面図である。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. FIG. 1 is a front view of an integrated amorphous photovoltaic device fabricated on a long metal substrate according to the present invention.

第7図における一体型非晶質光発電素子(/l)は、ま
ず厚さ例えば0. / mで幅広の長尺金属基板例えば
ステンレス基板(/コ)の上にプラズマCVD装置でP
IN接合を有する非晶質膜(tJ)c第二図参照]を成
膜し、この非晶質膜(/3)の上にスパッタ装置で透明
電極膜(/す)を成膜し、最後にこの透明電極膜(ハ・
の上にプリント印刷で多数の櫛形集電極(t!r)を印
刷することにより、作られる。なお、PIN接合を有す
る非晶質膜(/3)は、長尺ステンレス基板(/、2)
と透明を極膜(/q)の間に存在するので、第7図には
図示されていない。また、多数の櫛形集電極(/左)は
図示したように長尺ステンレス基板(12)の上に長尺
方向だ所定の間隔をおいて同じ模様で次々忙印刷される
The integrated amorphous photovoltaic device (/l) in FIG. 7 first has a thickness of, for example, 0. /m wide long metal substrate, such as a stainless steel substrate (/co), using a plasma CVD device.
An amorphous film (tJ) with an IN junction (see Figure 2) is formed, and a transparent electrode film (/3) is formed on this amorphous film (/3) using a sputtering device. This transparent electrode film (Ha・
It is made by printing a large number of comb-shaped collector electrodes (t!r) on top of the t!r. Note that the amorphous film with PIN junction (/3) is a long stainless steel substrate (/, 2).
and the transparent layer are present between the polar membrane (/q), so they are not shown in FIG. Further, as shown in the figure, a large number of comb-shaped collector electrodes (/left) are printed one after another in the same pattern on a long stainless steel substrate (12) at predetermined intervals in the longitudinal direction.

第二図は、第1図のように構成された一体型非晶質光発
電素子(l/)を第1図のAA′線、 BB’線。
Fig. 2 shows the integrated amorphous photovoltaic device (l/) constructed as shown in Fig. 1, along lines AA' and BB' in Fig. 1.

CC’線・・・・・・で切断して形成した個別の非晶質
光発電素子//A、//B、//C・・・・・・を重ね
合わせて電気的に直列接続した非晶質光発電素子モジュ
ールを示す斜視図で、(13)はPIN接合を有する非
晶質膜、(/λ)、(ハ・および(lよ)は第1図に示
したものと同一である。
Individual amorphous photovoltaic elements formed by cutting along the CC' line //A, //B, //C... are stacked and electrically connected in series. This is a perspective view showing an amorphous photovoltaic element module, in which (13) is an amorphous film with a PIN junction, (/λ), (c) and (l) are the same as those shown in Figure 1. be.

第一図のように構成された非晶質光発電素子それた隣接
の非晶質光発電素子(llB)の下部電極てなるステン
レス基板(lコ)とをハンダづけ接続・圧接・圧着また
はスポット溶接などの放電による溶接などの自動化量産
化に適した手段で電気的に接続してゆくことにより、個
別の非晶質光発電素子(/lA)、(llB)、(/l
C)・・・・・・間の直列接続を行うことができる。従
って、非晶質光発電素子間には、第す図に示した従来の
モジュールの場合と違って絶縁間隔をあける必要がない
The amorphous photovoltaic device configured as shown in Figure 1 is connected to the stainless steel substrate (lco) which serves as the lower electrode of the adjacent amorphous photovoltaic device (llB) by soldering, pressure bonding, crimping or spot bonding. Individual amorphous photovoltaic elements (/lA), (llB), (/l
C)... can be connected in series. Therefore, there is no need to provide an insulating interval between the amorphous photovoltaic elements, unlike in the case of the conventional module shown in FIG.

なお、上記実施例では、幅広の長尺金属基板を用いた一
体型非晶質光発電素子から切断された幅広の個別非晶質
光発電素子を直列接続する場合について述べたが、一体
型非晶質光発電素子から切り出される非晶質光発電素子
の形状1寸法は、モジュールの用途に応じて任意に設定
できることはいうまでもない。
In the above example, a case was described in which wide individual amorphous photovoltaic devices cut from an integrated amorphous photovoltaic device using a wide long metal substrate were connected in series. It goes without saying that the shape and dimensions of the amorphous photovoltaic element cut out from the crystalline photovoltaic element can be arbitrarily set depending on the use of the module.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、多数の櫛形集電極が
形成された一体型非晶質光発電素子を切断して形成した
個別の非晶質光発電素子を重ね合わせて電気的に直列接
続することによってモジュールを構成したので、非晶質
光発電素子間の接続にリード線を用いる必要がなく従っ
て接続が容易に行える。また非晶質光発電素子間の絶縁
間隔を必要としないので非晶質光発電素子の有効面積を
大きくすることができ、もつ高効率のモジュールが得ら
れるという効果がある。
As described above, according to the present invention, individual amorphous photovoltaic devices formed by cutting an integrated amorphous photovoltaic device in which a large number of comb-shaped collector electrodes are formed are stacked and electrically connected in series. Since the module is constructed by connecting the amorphous photovoltaic elements, there is no need to use lead wires to connect the amorphous photovoltaic elements, and the connection can therefore be easily performed. Furthermore, since no insulation interval is required between the amorphous photovoltaic elements, the effective area of the amorphous photovoltaic elements can be increased, and a highly efficient module can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例による一体型非晶質光発電
素子を示す正面図、第2図はこの発明の一実施例による
非晶質光発電素子モジュールの構成を示す斜視図、第3
図(atおよびfblは従来の非晶質光発電素子の正面
図および断面図、第9図は従来の非晶質光発電素子モジ
ュールの正面図である。 図において、(11)は一体型非晶質光発電素子、(/
/A)、(llB)、(//C)・・・・・・は個別の
非晶質光発電素子、(is)は長尺ステンレス基板、(
/3)はPIN接合を有する非晶質膜、(19)は透明
’lit極膜、(15)は櫛形集電極である。 なお、各図中、同一符号は同一または相当部分を示す。 搗1図 死2図 %3図 (0)           (b) 土 2G        t。
FIG. 1 is a front view showing an integrated amorphous photovoltaic device according to an embodiment of the present invention, FIG. 2 is a perspective view showing the structure of an amorphous photovoltaic device module according to an embodiment of the present invention, and FIG. 3
Figures (at and fbl are a front view and a cross-sectional view of a conventional amorphous photovoltaic device, and FIG. 9 is a front view of a conventional amorphous photovoltaic device module. In the figure, (11) is an integrated non- Crystalline photovoltaic device, (/
/A), (llB), (//C)... are individual amorphous photovoltaic elements, (is) is a long stainless steel substrate, (
/3) is an amorphous film with a PIN junction, (19) is a transparent 'lit electrode film, and (15) is a comb-shaped collector electrode. In each figure, the same reference numerals indicate the same or corresponding parts. 1 figure death 2 figure %3 figure (0) (b) soil 2G t.

Claims (3)

【特許請求の範囲】[Claims] (1)長尺金属基板の上にまずPIN接合を有する非晶
質膜を次いでその上に透明電極膜を形成したのち、この
透明電極膜上に多数の櫛形集電極を長尺方向に所定の間
隔で次々に形成して一体型非晶質光発電素子を形成する
工程と、この一体型非晶質光発電素子を、前記多数の櫛
形集電極のうち必ず1つを含む切片に切断して個別の非
晶質光発電素子を形成する工程と、切断された1つの非
晶質光発電素子の櫛形集電極と次の非晶質光発電素子の
金属基板とが接触するように重ね合わせることにより前
記個別の非晶質光発電素子を電気的に直列接続する工程
とを含んだことを特徴とする非晶質光発電素子モジュー
ルの製造方法。
(1) First, an amorphous film having a PIN junction is formed on a long metal substrate, and then a transparent electrode film is formed thereon, and then a large number of comb-shaped collector electrodes are arranged on the transparent electrode film in a predetermined direction in the longitudinal direction. forming an integrated amorphous photovoltaic device one after another at intervals, and cutting the integrated amorphous photovoltaic device into pieces that always include one of the plurality of comb-shaped collector electrodes. Steps of forming individual amorphous photovoltaic elements, and stacking so that the comb-shaped collector electrode of one cut amorphous photovoltaic element and the metal substrate of the next amorphous photovoltaic element are in contact with each other. A method for manufacturing an amorphous photovoltaic device module, comprising the step of electrically connecting the individual amorphous photovoltaic devices in series.
(2)直列接続は、ハンダづけ接続、圧接、圧着、また
は放電による溶接で行われることを特徴とする特許請求
の範囲第1項記載の非晶質光発電素子モジュールの製造
方法。
(2) The method for manufacturing an amorphous photovoltaic device module according to claim 1, wherein the series connection is performed by soldering, pressure bonding, crimping, or discharge welding.
(3)長尺金属基板が非晶質光発電素子の1つの電極を
兼ねていることを特徴とする特許請求の範囲第1項記載
の非晶質光発電素子モジュールの製造方法。
(3) The method for manufacturing an amorphous photovoltaic device module according to claim 1, wherein the long metal substrate also serves as one electrode of the amorphous photovoltaic device.
JP61045392A 1986-03-04 1986-03-04 Manufacture of amorphous photovoltaic power generation element module Pending JPS62203387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61045392A JPS62203387A (en) 1986-03-04 1986-03-04 Manufacture of amorphous photovoltaic power generation element module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61045392A JPS62203387A (en) 1986-03-04 1986-03-04 Manufacture of amorphous photovoltaic power generation element module

Publications (1)

Publication Number Publication Date
JPS62203387A true JPS62203387A (en) 1987-09-08

Family

ID=12717991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61045392A Pending JPS62203387A (en) 1986-03-04 1986-03-04 Manufacture of amorphous photovoltaic power generation element module

Country Status (1)

Country Link
JP (1) JPS62203387A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252147A (en) * 2008-07-22 2008-10-16 Kyocera Corp Solar battery module
JP2009010355A (en) * 2007-05-29 2009-01-15 Toray Eng Co Ltd Solar battery module
WO2011036998A1 (en) * 2009-09-25 2011-03-31 東レエンジニアリング株式会社 Apparatus and method for manufacturing solar cell module, and solar cell module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010355A (en) * 2007-05-29 2009-01-15 Toray Eng Co Ltd Solar battery module
JP2008252147A (en) * 2008-07-22 2008-10-16 Kyocera Corp Solar battery module
WO2011036998A1 (en) * 2009-09-25 2011-03-31 東レエンジニアリング株式会社 Apparatus and method for manufacturing solar cell module, and solar cell module
JP2011071311A (en) * 2009-09-25 2011-04-07 Toray Eng Co Ltd Apparatus and method for manufacturing solar cell module, and solar cell module

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