JPH0917935A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPH0917935A JPH0917935A JP7164260A JP16426095A JPH0917935A JP H0917935 A JPH0917935 A JP H0917935A JP 7164260 A JP7164260 A JP 7164260A JP 16426095 A JP16426095 A JP 16426095A JP H0917935 A JPH0917935 A JP H0917935A
- Authority
- JP
- Japan
- Prior art keywords
- inner lead
- resin
- lead
- island
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はリードフレームに関し、
特に樹脂封止されるリードフレームに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame,
In particular, the present invention relates to a resin-sealed lead frame.
【０００２】[0002]
【従来の技術】従来技術のリードフレームは、図４
（ａ），（ｂ）に示すように、内部リード先端部１及び
内部リード２は、アイランドに対して平行になってお
り、このようなリードフレームを薄型のパッケージに用
いた場合、薄型のパッケージは図５に示すように、ボン
ディングワイヤ１１のワイヤ高さを確保するために内部
リード２の上面側と下面側とでは上面側の樹脂厚が厚く
なっている。2. Description of the Related Art A conventional lead frame is shown in FIG.
As shown in (a) and (b), the inner lead tip portion 1 and the inner lead 2 are parallel to the island, and when such a lead frame is used in a thin package, the thin package As shown in FIG. 5, in order to secure the wire height of the bonding wire 11, on the upper surface side and the lower surface side of the internal lead 2, the resin thickness on the upper surface side is thick.
【０００３】したがって、樹脂封止を行った場合、内部
リード２の上面側と下面側とで樹脂体積が異なり樹脂封
止直後から樹脂１２の冷却が始まり温度が常温に近づく
につれて樹脂１２の収縮が始まる。そのため、樹脂量の
多い側が樹脂の収縮力が強くなるので樹脂体積の大きい
側にパッケージ反りが発生していた。つまり、リードフ
レーム上面側の樹脂厚が厚い場合は凹状の反り、リード
フレーム下面側の樹脂厚が厚い場合は凸状の反りとな
る。Therefore, when resin encapsulation is performed, the resin volume differs between the upper surface side and the lower surface side of the inner lead 2 and the resin 12 begins to cool immediately after resin encapsulation and shrinks as the temperature approaches room temperature. Begins. Therefore, the shrinkage force of the resin becomes stronger on the side where the amount of resin is larger, so that the package warp occurs on the side where the volume of resin is larger. That is, when the resin thickness on the upper surface of the lead frame is thick, the warp is concave, and when the resin thickness on the lower surface of the lead frame is thick, the warp is convex.
【０００４】また、図６に示すように、特にリードフレ
ーム上面側と下面側の樹脂厚が異る薄型のパッケージ
で、かつパッケージに対して小さい半導体チップ１０を
搭載し樹脂１２にて樹脂封止した状態では、半導体チッ
プ１０の上側の樹脂１２の厚みとアイラド５の下側の樹
脂１２の厚みはほぼ同じ厚みとなっているが、吊りピン
４の上側と下側では樹脂１２の厚みが異るため、封止後
の樹脂１２の収縮により収縮量が大きい樹脂１２の厚み
の厚い側にパッケージが反るという問題があった。その
上、一般に、樹脂封止型半導体装置では、熱ストレスな
どにより内部リード２と樹脂１２との界面での剥離が生
じ易い。これに対し、特開平２−９４４６２号公報で
は、内部リードを断面形状で、リード表面に対してほぼ
直角に立ち上がる立ち上がり壁を有する構造にし、樹脂
モールド層と内部リードとの接触面積を増やし熱ストレ
スによる内部リードと樹脂モールド層間の剥離を防止す
るリードフレームが開示されている。Further, as shown in FIG. 6, in particular, a thin package in which the resin thicknesses on the upper surface side and the lower surface side of the lead frame are different from each other, and a small semiconductor chip 10 is mounted on the package and resin-sealed with a resin 12. In this state, the thickness of the resin 12 on the upper side of the semiconductor chip 10 is substantially the same as the thickness of the resin 12 on the lower side of the eye rad 5, but the thickness of the resin 12 is different between the upper side and the lower side of the hanging pin 4. Therefore, there is a problem that the package warps toward the thick side of the resin 12 having a large shrinkage amount due to the shrinkage of the resin 12 after sealing. Moreover, in a resin-sealed semiconductor device, generally, peeling is likely to occur at the interface between the internal lead 2 and the resin 12 due to thermal stress or the like. On the other hand, in Japanese Unexamined Patent Publication No. 2-94462, the internal lead is made to have a cross-sectional shape and a structure having a rising wall that rises almost at right angles to the lead surface, and the contact area between the resin mold layer and the internal lead is increased to increase the thermal stress. There is disclosed a lead frame which prevents the internal lead and the resin mold layer from being separated from each other.
【０００５】[0005]
【発明が解決しようとする課題】以上説明したように、
従来のリードフレームでは、樹脂封止したときに、リー
ドフレームの上側と下側の樹脂の厚みの差により収縮し
たときに反りが生ずるという問題点があった。As described above,
The conventional lead frame has a problem that when it is resin-sealed, it warps when contracted due to a difference in resin thickness between the upper and lower sides of the lead frame.
【０００６】一方、熱ストレスによる内部リードと樹脂
モールド層の剥離を防止するために立ち上がり壁を有す
る構造のリードフレームでは、剥離防止には効果がある
が、それぞれの内部リード間の間隔が変わらないのでパ
ッケージの反りとインダクタンスの悪化という問題点が
あった。On the other hand, in a lead frame having a rising wall for preventing the peeling of the internal lead and the resin mold layer due to thermal stress, the peeling is effective, but the interval between the internal leads does not change. Therefore, there is a problem that the package is warped and the inductance is deteriorated.
【０００７】本発明の目的は、パッケージの反りや内部
リードと樹脂モールド層の剥離の発生及びインダクタン
スの悪化を防止出来るリードフレームを提供することに
ある。An object of the present invention is to provide a lead frame which can prevent the warp of the package, the peeling of the internal lead and the resin mold layer, and the deterioration of the inductance.
【０００８】[0008]
【課題を解決するための手段】本発明は、アイランド
と、このアイランドを保持する吊りピンと、前記アイラ
ンドの周辺に対向して配置されモールド樹脂にて樹脂封
止される内部リードと、この内部リードに接続する外部
リードとを有するリードフレームにおいて、前記内部リ
ードが先端部を残して前記アイランドに対して垂直に形
成された平板状であるか切欠き部を有するか中空部を有
する垂直に立った内部リードを含むことを特徴とする。SUMMARY OF THE INVENTION According to the present invention, an island, a suspending pin for holding the island, an internal lead arranged opposite to the periphery of the island and sealed with a mold resin, and the internal lead. In a lead frame having external leads connected to the inner leads, the inner leads are vertically formed with respect to the island, leaving a tip portion, having a notch portion, or standing vertically with a hollow portion. It is characterized by including an internal lead.
【０００９】[0009]
【実施例】次に本発明の実施例について図面を参照して
説明する。Next, an embodiment of the present invention will be described with reference to the drawings.
【００１０】図１（ａ），（ｂ）は本発明の第１の実施
例の平面図およびその垂直に立った内部リードの側面図
である。本発明の第１の実施例は、図１（ａ），（ｂ）
に示すように、アイランド５と、このアイランド５を保
持する吊りピン４と、このアイランド５の周辺に対向し
て配置されたモールドライン６内でモールド樹脂１２に
て樹脂封止される内部リード２と、この内部リード２に
接続したモールド樹脂１２外に導出される外部リード３
を備えている。内部リード２は、アイランド５に対して
平行な内部リード先端部１と、内部リード先端部１とモ
ールドライン６の内側の間の領域でアイランド５に垂直
な垂直に立った内部リード２ａと、モールドライン６の
内側で外部リード３に接続するアイランド５に平行な部
分とで構成される。1 (a) and 1 (b) are a plan view of a first embodiment of the present invention and a side view of an inner lead standing vertically. The first embodiment of the present invention is shown in FIGS.
As shown in FIG. 3, the island 5, the hanging pin 4 that holds the island 5, and the internal lead 2 that is resin-sealed with the mold resin 12 in the mold line 6 that is arranged to face the periphery of the island 5. And the external lead 3 led out of the mold resin 12 connected to the internal lead 2.
It has. The inner lead 2 includes an inner lead tip 1 which is parallel to the island 5, an inner lead 2a which is perpendicular to the island 5 in a region between the inner lead tip 1 and the inside of the molding line 6, and a mold. It is composed of a portion inside the line 6 and parallel to the island 5 connected to the external lead 3.
【００１１】内部リード２をこのように構成することに
より、それぞれの垂直に立った内部リード２ａ間の間隔
を拡く保つことができるので、樹脂封止を行った場合、
リードフレームの上下のモールド樹脂１２が内部リード
２によって分断されず一体化するため、樹脂封止後の冷
却に伴う樹脂収縮の際にパッケージ本体が均一に収縮す
るので、パッケージの反りは無くなり、垂直に立った内
部リード２ａとモールド樹脂１２との接触面積も増加す
るので熱ストレスなどによる剥離も防止できる。また、
それぞれの垂直に立った内部リード２ａ間の間隔も広く
保つことができるので内部リード２のそれぞれの間隔に
依存する相互インダクタンスも改善できる。By configuring the inner leads 2 in this way, it is possible to keep the distance between the vertically standing inner leads 2a wide. Therefore, when resin sealing is performed,
Since the molding resin 12 on the upper and lower sides of the lead frame is not divided by the internal leads 2 and is integrated, the package body shrinks uniformly when the resin shrinks due to cooling after the resin sealing, so that there is no warp of the package and the vertical Since the contact area between the standing inner lead 2a and the mold resin 12 also increases, peeling due to thermal stress can be prevented. Also,
Since the distance between the vertically standing inner leads 2a can be kept wide, the mutual inductance depending on the distance between the inner leads 2 can be improved.
【００１２】なお、垂直に立った内部リード２ａを有す
るリードフレームはプレス加工にて容易に製造できる。
また、このリードフレームを用いた樹脂封止型の半導体
装置の製造工程でも内部リード先端部１の平坦性が保た
れているのでボンディング工程および樹脂封止工程にお
いて従来の組立設備をそのまま用い組立てることができ
る。The lead frame having the inner lead 2a standing vertically can be easily manufactured by press working.
Further, since the flatness of the inner lead tip portion 1 is maintained even in the manufacturing process of the resin-sealed type semiconductor device using this lead frame, it is possible to assemble by using the conventional assembly equipment as it is in the bonding process and the resin sealing process. You can
【００１３】図２は本発明の第２の実施例の垂直に立っ
た内部リードの側面図である。本発明の第２の実施例
は、図２に示すように、切欠き部７を設けた垂直に立っ
た内部リード２ｂの例である。このように切欠き部７を
設けることにより、樹脂封止を行った場合、モールド樹
脂１２の抵抗が緩和されるので、内部リード２のリード
シフト発生を低減できる。また、モールド樹脂１２と内
部リード２との接触面積が増加するため、熱ストレスに
よるモールド樹脂１２と内部リード２間の剥離を防止す
ることもできる。FIG. 2 is a side view of a vertically standing inner lead of a second embodiment of the present invention. The second embodiment of the present invention is an example of a vertically standing inner lead 2b provided with a cutout portion 7 as shown in FIG. By providing the notch 7 in this way, when resin sealing is performed, the resistance of the mold resin 12 is relieved, so that the lead shift of the internal lead 2 can be reduced. Further, since the contact area between the mold resin 12 and the inner leads 2 is increased, it is possible to prevent peeling between the mold resin 12 and the inner leads 2 due to thermal stress.
【００１４】図３は本発明の第３の実施例の垂直に立っ
た内部リードの側面図である。本発明の第３の実施例
は、図３に示すように、空胴部８を設けた垂直に立った
内部リード２ｃの例である。このように空胴部８を設け
ることによっても第２の実施例と同じ効果が得られる。FIG. 3 is a side view of a vertically standing inner lead according to a third embodiment of the present invention. The third embodiment of the present invention is an example of a vertically standing inner lead 2c provided with a cavity portion 8 as shown in FIG. By providing the cavity portion 8 in this way, the same effect as that of the second embodiment can be obtained.
【００１５】[0015]
【発明の効果】以上説明したように本発明は、内部リー
ド先端部を除きモールドライン内側の内部リードをアイ
ランドに対してほぼ垂直にすることにより、封止樹脂が
内部リードによって分断されることがなくなるため、リ
ードフレームの上面側と下面側の樹脂厚が異なっても樹
脂封止後の樹脂収縮がスムーズに進行していくことから
パッケージの反りが無くなり、また、内部リード間の間
隔が広がるので、相互インダクタンスも改善できるとい
う効果を有する。As described above, according to the present invention, the encapsulating resin can be divided by the inner leads by making the inner leads inside the mold line substantially perpendicular to the island except for the tips of the inner leads. Even if the resin thickness on the upper surface side and the lower surface side of the lead frame is different, the resin shrinks smoothly after resin encapsulation, so the package does not warp, and the space between the internal leads increases. The mutual inductance can be improved.
【図１】（ａ），（ｂ）は本発明の第１の実施例の平面
図およびその垂直に立った内部リードの側面図である。1A and 1B are a plan view of a first embodiment of the present invention and a side view of an inner lead standing upright thereof.
【図２】本発明の第２の実施例の垂直に立った内部リー
ドの側面図である。FIG. 2 is a side view of a vertically standing inner lead according to a second embodiment of the present invention.
【図３】本発明の第３の実施例の垂直に立った内部リー
ドの側面図である。FIG. 3 is a side view of a vertically standing inner lead of a third embodiment of the present invention.
【図４】（ａ），（ｂ）は従来のリードフレームの一例
の平面図およびその内部リードの側面図である。4A and 4B are a plan view and a side view of an internal lead of an example of a conventional lead frame, respectively.
【図５】従来のリードフレームを用いた薄型パッケージ
の一例の断面図である。FIG. 5 is a cross-sectional view of an example of a thin package using a conventional lead frame.
【図６】図５の半導体チップ搭載部の部分拡大断面図で
ある。6 is a partially enlarged cross-sectional view of the semiconductor chip mounting portion of FIG.
１ 内部リード先端部 ２ 内部リード ２ａ，２ｂ，２ｃ 垂直に立った内部リード ３ 外部リード ４ 吊りピン ５ アイランド ６ モールドライン ７ 切欠き部 ８ 空胴部 ９ マウント材 １０ 半導体チップ １１ ボンディングワイヤ １２ モールド樹脂 1 Inner Lead Tip 2 Inner Leads 2a, 2b, 2c Vertically Standing Inner Leads 3 Outer Leads 4 Hanging Pins 5 Islands 6 Mold Lines 7 Notches 8 Cavities 9 Mounting Materials 10 Semiconductor Chips 11 Bonding Wires 12 Mold Resin
Claims (4)
る吊りピンと、前記アイランドの周辺に対向して配置さ
れモールド樹脂にて樹脂封止される内部リードと、この
内部リードに接続する外部リードとを有するリードフレ
ームにおいて、前記内部リードが先端部を残して前記ア
イランドに対して垂直に形成された垂直に立った内部リ
ードを含むことを特徴とするリードフレーム。1. An island, a suspending pin for holding the island, an inner lead that is disposed to face the periphery of the island and is resin-sealed with a molding resin, and an outer lead that is connected to the inner lead. The lead frame according to claim 1, wherein the inner lead includes a vertically standing inner lead which is formed perpendicularly to the island except for a tip portion thereof.
あることを特徴とする請求項１記載のリードフレーム。2. The lead frame according to claim 1, wherein the vertically standing inner lead has a flat plate shape.
を有することを特徴とする請求項１記載のリードフレー
ム。3. The lead frame according to claim 1, wherein the vertically standing inner lead has a cutout portion.
有することを特徴とする請求項１記載のリードフレー
ム。4. The lead frame of claim 1, wherein the vertically standing inner lead has a cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7164260A JPH0917935A (en) | 1995-06-29 | 1995-06-29 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7164260A JPH0917935A (en) | 1995-06-29 | 1995-06-29 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0917935A true JPH0917935A (en) | 1997-01-17 |
Family
ID=15789716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7164260A Pending JPH0917935A (en) | 1995-06-29 | 1995-06-29 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0917935A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183546A (en) * | 1986-02-07 | 1987-08-11 | Nec Corp | Semiconductor device |
-
1995
- 1995-06-29 JP JP7164260A patent/JPH0917935A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183546A (en) * | 1986-02-07 | 1987-08-11 | Nec Corp | Semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19970729 |