JPH0917929A - Bonding post and its selector - Google Patents

Bonding post and its selector

Info

Publication number
JPH0917929A
JPH0917929A JP7163899A JP16389995A JPH0917929A JP H0917929 A JPH0917929 A JP H0917929A JP 7163899 A JP7163899 A JP 7163899A JP 16389995 A JP16389995 A JP 16389995A JP H0917929 A JPH0917929 A JP H0917929A
Authority
JP
Japan
Prior art keywords
bonding post
bonding
post
transfer section
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7163899A
Other languages
Japanese (ja)
Other versions
JP2624220B2 (en
Inventor
Toshio Komiyama
利男 込山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP7163899A priority Critical patent/JP2624220B2/en
Publication of JPH0917929A publication Critical patent/JPH0917929A/en
Application granted granted Critical
Publication of JP2624220B2 publication Critical patent/JP2624220B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48475Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48491Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007Surface contacts, e.g. bumps

Abstract

PURPOSE: To provide a bonding post small in heat fatigue and a selector capable of deciding a front face or a reverse face of a bonding post without erroneous decisions. CONSTITUTION: With the use of a Fe-Ni alloy plate 4 as a mother material, on a side face of a bonding post 1 punched by a press die, a fractured plane (non-glossy part) 2 or a shear face (glossy part) 3 of width 0.3mm or more is formed, to decide a front face or a reverse face by detecting by an optical sensor.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、厚膜混成集積回路に用
いられるボンディングポスト及びその選別装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding post used in a thick-film hybrid integrated circuit and an apparatus for selecting the same.

【0002】[0002]

【従来の技術】一般にボンディングポストは、厚膜混成
集積回路の基板上に固定され、半導体チップ等、Al線
をボンディングする面との高さの不揃をなくすと共に、
ボンディングされたAl線を切断する時のバッファ用と
して用いられている。図5(a)〜(c)は従来のボン
ディングポストの上面図,側面図及びB−B線断面図で
ある。
2. Description of the Related Art Generally, a bonding post is fixed on a substrate of a thick film hybrid integrated circuit to eliminate irregularities in height with a surface to which an Al wire is bonded such as a semiconductor chip.
It is used as a buffer for cutting the bonded Al wire. 5A to 5C are a top view, a side view, and a sectional view taken along line BB of a conventional bonding post.

【0003】従来のボンディングポスト1Aは、図5
(a)〜(c)に示すように、厚さ約0.8mmのアル
ミニウム(Al)板7を母材とし、一方の面に厚さ約5
〜10μmのCu(又はNi)層8をメッキ等で設け、
さらにその上に約数10〜100μmの半田層6を設け
た複合材を、プレス金型により直径2mmの形状に打ち
抜いた構造をしている。
A conventional bonding post 1A is shown in FIG.
As shown in (a) to (c), an aluminum (Al) plate 7 having a thickness of about 0.8 mm is used as a base material, and a thickness of about 5 mm is formed on one surface.
A Cu (or Ni) layer 8 of 10 to 10 μm is provided by plating or the like,
Further, a composite material having a solder layer 6 of about several tens to 100 μm provided thereon is punched into a shape having a diameter of 2 mm by a press die.

【0004】この複合材はビッカース硬度HV =40〜
60程度で軟いため、プレス金型で打ち抜くときの圧力
により、図5(b)のように、せん断面(光沢部)3の
エッヂ部に大きい丸味が形成される。また反対側の破断
面(無光沢部)2は平坦状態になっている。従ってこの
形状差を利用し図6に示す選別装置の傾斜角および振動
によりボンディングポストの表裏の判別を行い選別され
ている。
This composite material has a Vickers hardness H V = 40 to
Since it is soft at about 60, a large roundness is formed at the edge of the sheared surface (glossy portion) 3 as shown in FIG. The opposite fracture surface (matte portion) 2 is flat. Therefore, by utilizing this difference in shape, the front and back of the bonding post are discriminated by the inclination angle and the vibration of the selection device shown in FIG.

【0005】ボンディングポストの選別装置は、図6に
示したように、回転振動部10上に設けられらせん状に
形成された第1搬送部9Aと、この第1搬送部9Aに接
続された直線状の第2搬送部9Bとから主に構成され、
第1搬送部9Aの底面部におかれたボンディングポスト
1Aを回転振動させ上部に搬送し、第1搬送部9Aの終
端部において、例えば裏面を上部としたボンディングポ
ストのみを第2搬送部9に送るようになっている。
As shown in FIG. 6, a bonding post sorting apparatus includes a spirally-formed first transfer section 9A provided on a rotary vibrating section 10 and a straight line connected to the first transfer section 9A. And a second conveyance section 9B having a shape of
The bonding post 1A placed on the bottom portion of the first transfer portion 9A is rotated and vibrated to be transferred to the upper portion. At the end portion of the first transfer portion 9A, for example, only the bonding post having the back surface as the upper portion is transferred to the second transfer portion 9. It is supposed to be sent.

【0006】ボンディングポスト1Aを選別する第1搬
送部9Aの終端部には、図7(a)に示すように段差1
9が設けられており、ボンディングポスト1Aが大きな
丸味のある裏面を下にして送られてくると、この段差1
9の部分で落下し除外される。一方、平坦な表面を下に
して送られてくるボンディングポスト1Aは、図7
(b)に示すように、摩擦が大きい為段差19上を通り
落下することなく第2搬送部に送られ、例えば、テーピ
ングマシンにより自動的にテーピングされる。
[0006] As shown in FIG. 7A, a step 1 is provided at the end of the first transport section 9A for selecting the bonding post 1A.
9 is provided, and when the bonding post 1 </ b> A is sent with the large rounded back side down, the step 1 is formed.
It falls at the part of 9 and is excluded. On the other hand, the bonding post 1A sent with the flat surface down is shown in FIG.
As shown in (b), since the friction is large, it is sent to the second transport section without falling over the step 19, and is automatically taped by a taping machine, for example.

【0007】図8にボンディングポスト1Aを厚膜混成
集積回路に適用した場合を示す。図8に示すように、ア
ルミナセラミック基板21上に印刷、焼成により回路形
成した、厚み8〜15μmのAg−Pd,Ag−Pt等
の厚膜導体22上に半導体チップ23とボンディングポ
スト1Aを半田6等で接合し、さらに半導体チップ23
とボンディングポスト1Aとは直径50〜500μmの
Al線24で接続される。
FIG. 8 shows a case where the bonding post 1A is applied to a thick film hybrid integrated circuit. As shown in FIG. 8, a semiconductor chip 23 and a bonding post 1A are soldered on a thick film conductor 22 such as Ag-Pd or Ag-Pt having a thickness of 8 to 15 μm, which is formed by printing and firing on an alumina ceramic substrate 21. 6 and the like, and the semiconductor chip 23
And the bonding post 1A are connected by an Al wire 24 having a diameter of 50 to 500 μm.

【0008】[0008]

【発明が解決しようとする課題】この従来のボンディン
グポストは、複合材の厚み,組成およびプレス金型の調
整等で打ち抜き形状が変化することと、複合材の表面荒
さが変わるため、搬送部との摩擦が不安定となり、搬送
部の傾斜角および振動での表裏の判定で約0.5%の不
具合が発生していた。従ってアルミナセラミック基板へ
の自動実装での表裏誤搭載が生じる等の問題があった。
In this conventional bonding post, the punching shape changes due to the adjustment of the thickness and composition of the composite material and the press die, and the surface roughness of the composite material changes. Of the transfer unit became unstable, and a problem of about 0.5% occurred in the determination of the front and back sides by the inclination angle and the vibration of the transport unit. Therefore, there has been a problem that front and back mounting errors occur during automatic mounting on an alumina ceramic substrate.

【0009】また、アルミナセラミック基板の厚膜導体
上にアルミニウムを母材とするボンディングポスト1A
を半田で接続した混成集積回路装置では、熱膨張率に大
きな差があるため、実使用上の冷熱サイクルで、アルミ
ナセラミック基板とボンディングポスト間の接続部に熱
応力が生じ接続劣化を起すという問題もあった。
Further, a bonding post 1A made of aluminum as a base material on a thick film conductor of an alumina ceramic substrate.
There is a large difference in the coefficient of thermal expansion in the hybrid integrated circuit device that is connected by soldering, so that the thermal stress of the actual use causes thermal stress at the connection part between the alumina ceramic substrate and the bonding post, causing the connection deterioration. There was also.

【0010】この対策として、例えば特開昭61−15
0359号公報に示されているように、ボンディングポ
ストの材質を、例えば鉄・ニッケル合金に変更すると、
ビッカース硬度HV =100〜150程度と硬くなるた
め、プレス金型で打ち抜くと、ボンディングポストのエ
ッヂ部の丸味が小さくなり、反対面の形状と同様となる
ため、従来のボンディングポストの選別装置では、表裏
判別が不可能になるという問題があった。
As a countermeasure against this, for example, Japanese Patent Laid-Open No. 61-15 / 1986
As disclosed in Japanese Patent No. 0359, if the material of the bonding post is changed to, for example, an iron-nickel alloy,
To become hard and Vickers hardness H V = 100 to 150 nm, when punched by a press die, roundness of the edge portion of the bonding post is reduced, since the same as the shape of the opposite surface, in the sorting apparatus of conventional bonding post However, there is a problem that it is impossible to distinguish between front and back.

【0011】本発明の第1の目的は、実装した時の熱疲
労を小さくできるボンディングポストを提供することに
ある。
A first object of the present invention is to provide a bonding post which can reduce thermal fatigue when mounted.

【0012】本発明の第2の目的は、誤判定なしで表裏
の判別ができるボンディングポストの選別装置を提供す
ることにある。
A second object of the present invention is to provide a bonding post sorting apparatus capable of distinguishing between front and back sides without erroneous determination.

【0013】[0013]

【課題を解決するための手段】第1の発明のボンディン
グポストは、Fe−Ni合金板を母材とし、その一方の
面にAl層を他方の面に半田層を被着した複合材をプレ
ス金型により打ち抜いて形成したボンディングポストに
おいて、打ち抜きにより少くとも幅0.3mmのせん断
面又は破断面を側面の周囲全体に設けたことを特徴とす
るものである。
According to a first aspect of the present invention, there is provided a bonding post formed by pressing a composite material having an Fe-Ni alloy plate as a base material, an Al layer on one surface and a solder layer on the other surface. In a bonding post formed by punching with a mold, a shearing surface or a fractured surface having a width of at least 0.3 mm is provided around the entire periphery of the side surface by punching.

【0014】第2の発明のボンディングポストの選別装
置は、らせん状に形成され振動によりボンディングポス
トを上部に送る第1搬送部と、この第1搬送部に接続さ
れた直線状の第2搬送部とを有し、ボンディングポスト
の表面をそろえて送るボンディングポストの選別装置に
おいて、前記ボンディングポストのせん断面又は破断面
を検出する光センサを含む表裏判別手段を前記第1搬送
部の終端部に設けたことを特徴とするものである。
According to a second aspect of the present invention, there is provided an apparatus for sorting bonding posts, comprising: a first transport section formed in a spiral shape and feeding the bonding posts upward by vibration; and a second linear transport section connected to the first transport section. A bonding post sorting apparatus that aligns the surface of the bonding post and sends a front / back discrimination means including an optical sensor for detecting a sheared surface or a broken surface of the bonding post at an end of the first transport unit. It is characterized by having.

【0015】[0015]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。図1(a)〜(c)は本発明の第1の実施
例のボンディングポストの上面図,側面図及びA−A線
断面図である。
Next, embodiments of the present invention will be described with reference to the drawings. FIGS. 1A to 1C are a top view, a side view, and a cross-sectional view taken along line AA of a bonding post according to a first embodiment of the present invention.

【0016】図1(a)〜(c)においてボンディング
ポスト1は、厚さ0.8mmのFe−Ni合金板4を母
材とし、表面に厚さ10〜15μmのAl(又はAl−
Si)層5を、又裏面に厚さ30〜50μmの半田層6
を被着した複合材をプレス金型により打ち抜いて形成さ
れるが、特にその側面の周囲全体に幅0.3mm以上の
破断面2又はせん断面3を設けたものである。
1 (a) to 1 (c), a bonding post 1 is made of a 0.8 mm thick Fe-Ni alloy plate 4 as a base material, and has a 10-15 μm thick Al (or Al-
Si) layer 5 and a solder layer 6 having a thickness of 30 to 50 μm on the back surface.
Is formed by punching out a composite material to which a surface is applied with a press die. In particular, a fracture surface 2 or a shear surface 3 having a width of 0.3 mm or more is provided around the entire side surface.

【0017】図2は第1の実施例のボンディングポスト
1を打ち抜く為の金型の断面図である。打ち抜かれたボ
ンディングポスト1の側面の周囲全体に破断面2又はせ
ん断面3を形成する為には、ポンチ16とダイ17との
クリアランスlを調整する必要がある。ボンディングポ
スト1の厚さTに対する破断面2の幅tとクリアランス
lは図3に示すように比例する。従ってクリアランスl
を適当に選ぶことにより破断面2の幅tを所望の値にす
ることが可能である。
FIG. 2 is a sectional view of a die for punching out the bonding post 1 of the first embodiment. In order to form the fractured surface 2 or the sheared surface 3 around the entire side surface of the punched bonding post 1, it is necessary to adjust the clearance 1 between the punch 16 and the die 17. The width t of the fractured surface 2 and the clearance l are proportional to the thickness T of the bonding post 1 as shown in FIG. Therefore, clearance l
Can be set to a desired value for the width t of the fractured surface 2.

【0018】例えば、図2においてポンチ16の直径を
1.98〜1.99mm,ポンチ16とダイ17とのク
リアランスlを10〜20μmとし、厚さ約0.8mm
の複合材15を打ち抜いて直径2mmのボンディングポ
スト1を形成した場合その側面の周囲全体に幅約0.4
mmの破断面2とせん断面3とが形成される。クリアラ
ンスlの値が10〜20μm以外では破断面2又はせん
断面3の幅が大きくなる。
For example, in FIG. 2, the diameter of the punch 16 is 1.98 to 1.99 mm, the clearance 1 between the punch 16 and the die 17 is 10 to 20 μm, and the thickness is about 0.8 mm.
When the bonding post 1 having a diameter of 2 mm is formed by punching out the composite material 15 of
A fracture surface 2 and a shear plane 3 of mm are formed. When the value of the clearance 1 is other than 10 to 20 μm, the width of the fracture surface 2 or the shear surface 3 increases.

【0019】図4(a),(b)は本発明の第2の実施
例のボンディングポストの選別装置の構成図であり、特
にボンディングポストの選別時の状態を示している。以
下図6を併用して説明する。
FIGS. 4 (a) and 4 (b) are block diagrams of a bonding post selection apparatus according to a second embodiment of the present invention, and particularly show a state when the bonding posts are selected. This will be described with reference to FIG.

【0020】図4(a),(b)及び図6を参照すると
ボンディングポストの選別装置は、らせん状に形成され
振動によりボンディングポスト1を上部に送る第1搬送
部9Aと、この第1搬送部9Aに接続された直線状の第
2搬送部9Bと、第1搬送部9Aの終端部に設けられボ
ンディングポスト1の破断面2又はせん断面3を検出す
る発光素子及び受光素子を含む光センサ11と、この光
センサ11で検出した光量の値とあらかじめ記憶させて
おいた基準値とを比較する比較部12と、この比較部1
2からの信号によりコンプレッサを制御するコンプレッ
サ制御部と、この制御部13の信号により第1搬送部9
A上のボンディングポスト1を除く為の空気18を第1
搬送部にあけられた穴20に送るコンプレッサ14とか
ら主に構成されている。以下この選別装置の動作につい
て説明する。
Referring to FIGS. 4 (a), 4 (b) and 6, the bonding post sorting apparatus comprises a first transfer section 9A which is formed in a spiral shape and feeds the bonding post 1 upward by vibration, and the first transfer section 9A. An optical sensor including a light-emitting element and a light-receiving element, which are provided at the end of the first transfer section 9A and detect a fractured surface 2 or a shear plane 3 of the bonding post 1 provided at the end of the first transfer section 9A. A comparing unit 12 for comparing the value of the light amount detected by the optical sensor 11 with a reference value stored in advance;
A compressor control unit for controlling the compressor by a signal from the control unit 2;
Air 18 for removing bonding post 1 on A
It mainly comprises a compressor 14 for feeding to a hole 20 formed in the conveying section. Hereinafter, the operation of the sorting device will be described.

【0021】振動により第1搬送部9Aの端部の段差1
9の所にボンディングポスト1が送られてくると、その
側面の下部に光センサ11から光が照射されその反射光
が検出される。例えば、表面が下になっているボンディ
ングポスト1を選別して第2搬送部9Bに送る場合、反
射光が破断面(無光沢部)2からのものか否かを比較部
12によって判別し、せん断面(光沢部)3からのもの
であれば図4(a)に示したように、コンプレッサ14
を制御して空気18を穴20に送ってボンディングポス
ト1を除去する。一方図4(b)に示すように、ボンデ
ィングポスト1からの反射光が破断面2からのものであ
ればボンディングポスト1はそのまま第2搬送部9Bへ
送られ次工程に移される。
Due to the vibration, the step 1 at the end of the first transfer section 9A
When the bonding post 1 is sent to the position 9, light is emitted from the optical sensor 11 to the lower portion of the side surface, and the reflected light is detected. For example, when the bonding post 1 having the lower surface is selected and sent to the second transport unit 9B, the comparison unit 12 determines whether or not the reflected light is from the fractured surface (matte portion) 2. If it is from the shear surface (glossy portion) 3, as shown in FIG.
Is sent to the hole 20 to remove the bonding post 1. On the other hand, as shown in FIG. 4B, if the reflected light from the bonding post 1 is from the fracture surface 2, the bonding post 1 is sent to the second transport section 9B as it is and is moved to the next step.

【0022】光センサ11から照射される光ビーム径を
0.1〜0.2mmとすると、ボンデングポスト1の側
面に形成される破断面2又はせん断面3の幅は0.3m
m以上が望ましい。0.3mm以下になると破断面2又
はせん断面3の幅のばらつきにより反射光検出に誤差を
生じ、ボンディングポスト1の選別精度が低下する。
Assuming that the diameter of the light beam emitted from the optical sensor 11 is 0.1 to 0.2 mm, the width of the fracture surface 2 or the shear surface 3 formed on the side surface of the bonding post 1 is 0.3 m.
m or more is desirable. When the thickness is 0.3 mm or less, an error occurs in the detection of reflected light due to a variation in the width of the fractured surface 2 or the sheared surface 3, and the sorting accuracy of the bonding post 1 is reduced.

【0023】このように本発明のボンディングポスト
は、その側面に幅0.3mm以上の破断面又はせ断面が
形成されてる為、光センサを有する選別装置により精度
良く選別することができる。又図5に示した従来のボン
ディングポスト1Aのように、裏面に大きな丸味を形成
する必要がない為、ボンディングポストの母材をセラミ
ック基板の線膨張率(約2.0×10-6/℃)に近い値
(約5.0×10-6/℃)のFe−Ni合金にすること
ができる。従って図8に示したように、ボンディングポ
スト1をセラミック基板21上に接続し冷熱サイクルを
行っても熱応力が小さい為、半田層6及び厚膜導体22
の熱疲労を抑えることができ、接続劣化を防止できる。
As described above, since the bonding post of the present invention has a fractured surface or a cross-section having a width of 0.3 mm or more formed on the side surface thereof, the bonding post can be accurately selected by a selection device having an optical sensor. Further, unlike the conventional bonding post 1A shown in FIG. 5, since it is not necessary to form a large roundness on the back surface, the base material of the bonding post is changed to the coefficient of linear expansion of the ceramic substrate (about 2.0 × 10 −6 / ° C.). ) Can be obtained (approximately 5.0 × 10 −6 / ° C.). Therefore, as shown in FIG. 8, even when the bonding post 1 is connected to the ceramic substrate 21 and the thermal cycle is performed, the thermal stress is small.
Can suppress thermal fatigue and prevent connection deterioration.

【0024】尚、上記第2の実施例においては、ボンデ
ィングポスト1の表裏を判別したのち、空気を用いてボ
ンディングポストを除く場合について説明したが、これ
に限定されるものでなく、針状のものでボンディングポ
ストを突いて除去するようにしてもよい。
In the second embodiment, a case has been described in which the front and back of the bonding post 1 are discriminated, and then the bonding post is removed using air. However, the present invention is not limited to this. A bonding post may be used to remove the bonding post.

【0025】[0025]

【発明の効果】以上説明したように本発明は、プレス金
型で打ち抜いて形成したボンディングポストの側面に幅
0.3mm以上の破断面(無光沢部)またはせん断面
(光沢部)を形成し、光センサでその光沢差を光学的に
検知することにより、誤判定なくボンディングポストの
表裏を判別することができる。従って集積回路装置への
実装による誤搭載を従来の0.5%から0%に改善する
ことができる。
As described above, according to the present invention, a fracture surface (matte portion) or a shear surface (glossy portion) having a width of 0.3 mm or more is formed on the side surface of a bonding post formed by punching with a press die. By optically detecting the gloss difference with an optical sensor, the front and back of the bonding post can be determined without erroneous determination. Therefore, erroneous mounting due to mounting on an integrated circuit device can be reduced from 0.5% in the past to 0%.

【0026】また、ボンディングポストにアルミナセラ
ミック基板と同等の熱膨張率を有する材料が適用できる
為、厚膜混成集積回路に適用した場合、冷熱サイクルで
の熱疲労による接続部の劣化を少なくできるという効果
もある。
Further, since a material having a thermal expansion coefficient equivalent to that of an alumina ceramic substrate can be applied to the bonding post, when applied to a thick film hybrid integrated circuit, deterioration of a connection portion due to thermal fatigue in a cooling / heating cycle can be reduced. There is also an effect.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のボンディングポストの平面図、側面図
及びA−A線断面図。
FIG. 1 is a plan view, a side view, and a cross-sectional view taken along line AA of a bonding post of the present invention.

【図2】ボンディングポストを形成する為の金型の断面
図。
FIG. 2 is a cross-sectional view of a mold for forming a bonding post.

【図3】ボンディングポストの厚さに対する破断面の幅
の割合と金型のクリアランスとの関係を示す図。
FIG. 3 is a diagram showing a relationship between a ratio of a width of a fractured surface to a thickness of a bonding post and a clearance of a mold.

【図4】本発明のボンディングポストの選別装置の構成
図。
FIG. 4 is a configuration diagram of a bonding post selection device of the present invention.

【図5】従来のボンディングポストの平面図,側面図及
びB−B線断面図。
FIG. 5 is a plan view, a side view, and a cross-sectional view taken along line BB of a conventional bonding post.

【図6】従来の選別装置の断面図。FIG. 6 is a sectional view of a conventional sorting device.

【図7】従来のボンディングポストの選別方法を説明す
る為の断面図。
FIG. 7 is a cross-sectional view for explaining a conventional bonding post selection method.

【図8】従来のボンディングポストを搭載した混成集積
回路の断面図。
FIG. 8 is a cross-sectional view of a hybrid integrated circuit on which a conventional bonding post is mounted.

【符号の説明】[Explanation of symbols]

1,1A ボンディングポスト 2 破断面 3 せん断面 4 Fe−Ni合金板 5 Al層 6 半田層 7 Al板 9 Cu層 9A 第1搬送部 9B 第2搬送部 10 回転振動部 11 光センサ 12 比較部 13 コンプレッサ制御部 14 コンプレッサ 15 複合材 16 ポンチ 17 ダイ 18 空気 19 段差 20 穴 21 アルミナセラミック基板 22 厚膜導体 23 半導体チップ 24 Al線 DESCRIPTION OF SYMBOLS 1, 1A Bonding post 2 Breaking surface 3 Shear surface 4 Fe-Ni alloy plate 5 Al layer 6 Solder layer 7 Al plate 9 Cu layer 9A 1st conveyance part 9B 2nd conveyance part 10 Rotation vibration part 11 Optical sensor 12 Comparison part 13 Compressor control unit 14 Compressor 15 Composite material 16 Punch 17 Die 18 Air 19 Step 20 Hole 21 Alumina ceramic substrate 22 Thick film conductor 23 Semiconductor chip 24 Al wire

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 Fe−Ni合金板を母材とし、その一方
の面にAl層を他方の面に半田層を被着した複合材をプ
レス金型により打ち抜いて形成したボンディングポスト
において、打ち抜きにより少くとも幅0.3mmのせん
断面又は破断面を側面の周囲全体に設けたことを特徴と
するボンディングポスト。
1. A bonding post formed by punching a composite material having a Fe—Ni alloy plate as a base material, an Al layer on one surface thereof, and a solder layer on the other surface thereof, being punched by a press die. A bonding post, characterized in that a shear surface or a fracture surface having a width of at least 0.3 mm is provided all around the side surface.
【請求項2】 らせん状に形成され振動によりボンディ
ングポストを上部に送る第1搬送部と、この第1搬送部
に接続された直線状の第2搬送部とを有し、ボンディン
グポストの表面をそろえて送るボンディングポストの選
別装置において、前記ボンディングポストのせん断面又
は破断面を検出する光センサを含む表裏判別手段を前記
第1搬送部の終端部に設けたことを特徴とするボンディ
ングポストの選別装置。
2. A first transfer section which is formed in a spiral shape and feeds a bonding post upward by vibration, and a second linear transfer section connected to the first transfer section. An apparatus for sorting bonding posts to be sent together, wherein front and back discriminating means including an optical sensor for detecting a sheared surface or a broken surface of the bonding posts is provided at an end portion of the first transport unit. apparatus.
JP7163899A 1995-06-29 1995-06-29 Bonding post and its sorting device Expired - Fee Related JP2624220B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7163899A JP2624220B2 (en) 1995-06-29 1995-06-29 Bonding post and its sorting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7163899A JP2624220B2 (en) 1995-06-29 1995-06-29 Bonding post and its sorting device

Publications (2)

Publication Number Publication Date
JPH0917929A true JPH0917929A (en) 1997-01-17
JP2624220B2 JP2624220B2 (en) 1997-06-25

Family

ID=15782939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7163899A Expired - Fee Related JP2624220B2 (en) 1995-06-29 1995-06-29 Bonding post and its sorting device

Country Status (1)

Country Link
JP (1) JP2624220B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7322075B2 (en) * 2004-02-25 2008-01-29 Ykk Corporation Metallic slide fastener element and method for manufacturing the same
CN113517255A (en) * 2021-04-23 2021-10-19 长鑫存储技术有限公司 Semiconductor structure and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7322075B2 (en) * 2004-02-25 2008-01-29 Ykk Corporation Metallic slide fastener element and method for manufacturing the same
CN113517255A (en) * 2021-04-23 2021-10-19 长鑫存储技术有限公司 Semiconductor structure and manufacturing method thereof
CN113517255B (en) * 2021-04-23 2023-09-22 长鑫存储技术有限公司 Semiconductor structure and manufacturing method thereof

Also Published As

Publication number Publication date
JP2624220B2 (en) 1997-06-25

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