JPH0917827A - Semiconductor device - Google Patents

Abstract

PURPOSE: To reduce the cost of a product and improve the reliability at mounting and heat radiation efficiency, concerning a semiconductor device where a semiconductor chip is mounted on a substrate by flip chip bonding. CONSTITUTION: This semiconductor device posses a semiconductor chip 21, a substrate 22, where this semiconductor chip is mounted by flip chip bonding method, sealing resin 24, which is arranged on the substrate 22 so as to seal the semiconductor chip 21, and a cap 23, which is arranged in such a constitution as to be thermally connected to the semiconductor chip 21 on this sealing resin 24, and the semiconductor chip 21 is made to function as a spacer, and by this semiconductor chip 21, the height to the substrate 24 of the sealing resin 24 interposed between the cap 23 and the substrate 22 is regulated to be constant.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which a semiconductor chip is flip-chip mounted on a substrate. In semiconductor devices of recent years, the operating speed of semiconductor chips has been increasing more and more, and the speed delay due to the wiring length of the input / output circuit cannot be ignored. For this reason, a flip-chip connection method, which shortens the wiring length, is being put into practical use as a connection method that replaces the conventional connection method using metal wires.

On the other hand, with the recent increase in speed and density of semiconductor devices, the amount of heat generated by semiconductor chips tends to increase, and therefore it is necessary to improve heat dissipation. Further, along with the downsizing of semiconductor devices and the surface mounting on a mounting substrate, it is necessary to improve reliability during mounting.

Therefore, also in the semiconductor device using the flip chip connection method, it is desired to improve the heat dissipation and the reliability at the time of mounting.

[0004]

2. Description of the Related Art A semiconductor device adopting a conventional flip chip connection method is shown in FIGS. A semiconductor device 1 shown in FIG. 10 uses a multilayer ceramic substrate 3 as a substrate on which a semiconductor chip 2 is mounted. The multi-layer ceramic substrate 3 has a cavity 4 formed therein for housing the semiconductor chip 2. A connection pattern 5 is formed on the bottom of the cavity 4, and the solder bumps 6 formed on the lower surface of the semiconductor chip 2 are flip-chip connected to the connection pattern 5.

A metal cap 7 is joined to the upper part of the multilayer ceramic substrate 3 by a brazing material 8 such as solder, whereby the semiconductor chip 2 is sealed in the multilayer ceramic substrate 3. Further, balls 9 serving as external connection terminals are provided on the bottom surface of the multilayer ceramic substrate 3, and each ball 9 is electrically connected to the semiconductor chip 2 via the internal wiring of the multilayer ceramic substrate 3 and the connection pattern 5. It is connected.

On the other hand, the semiconductor device 10 shown in FIG. 11 uses a glass-epoxy substrate (hereinafter referred to as glass epoxy substrate) 11 as a substrate on which the semiconductor chip 2 is mounted. A connection pattern 12 is formed in the central portion of the upper surface of the glass epoxy substrate 11, and the solder bumps 6 formed on the lower surface of the semiconductor chip 2 are flip-chip connected to the connection pattern 12.

A frame-shaped dam 14 made of an adhesive resin 13 is provided at the outer peripheral position of the glass epoxy substrate 11. A sealing resin 15 is potted in a cavity formed by the glass epoxy substrate 11 and the dam 14 to seal the semiconductor device 10. In addition, balls 16 serving as external connection terminals are provided on the bottom surface of the glass epoxy substrate 11, and each ball 16 has a through hole (not shown) formed in the glass epoxy substrate 11 and a connection pattern 1.
It is electrically connected to the semiconductor chip 2 via 2.

[0008]

However, in the semiconductor device 1 shown in FIG. 10, since the expensive multilayer ceramic substrate 3 is used as the substrate, there is a problem that the product cost of the semiconductor device 1 becomes high.

Further, since the metal cap 7 is disposed on the upper surface of the multilayer ceramic substrate 3 using the brazing material 8 to hermetically seal the semiconductor chip 2, the semiconductor chip 2 is hollow-sealed. . Therefore, there is a problem that the heat generated in the semiconductor chip 2 cannot be dissipated and the heat dissipation efficiency of the semiconductor chip 2 is poor.

On the other hand, in the semiconductor device 10 shown in FIG. 11, since the glass epoxy substrate 11 is used as the substrate, the product cost can be reduced as compared with the semiconductor device 1 using the multilayer ceramic substrate 3. However, the semiconductor device 10
12 has a configuration in which the sealing resin 15 is potted in the cavity formed by the glass epoxy substrate 11 and the dam 14, and therefore, depending on various conditions such as variations in the amount of the sealing resin, the potting position, and the viscosity of the resin, FIG. As shown in FIG. 5, the sealing resin 15 may have a bias. When the sealing resin 15 is biased in this way, the reliability when mounting the semiconductor device 10 on a mounting substrate is reduced.

That is, when the semiconductor device 10 is mounted on the mounting board, the mounting process is generally performed by using a handling device. However, if the sealing resin 15 is biased as described above, the gripping portion 17 of the handling device is shown in FIG. As shown in FIG. 5, the semiconductor device 10 cannot be properly gripped, and the semiconductor device 10 is gripped in a biased state. Since the handling device mounts the semiconductor device 10 on the mounting substrate in this biased state, the semiconductor device 10 is tilted on the mounting substrate,
All the balls 16 cannot be properly soldered to the mounting board. Therefore, a defective connection portion is generated between the semiconductor device 10 and the mounting board, and thus reliability at the time of mounting deteriorates.

Further, in the semiconductor device 10 shown in FIG. 11, the semiconductor chip 2 has the sealing resin 1 having poor thermal conductivity.
Since it is sealed by 5, the heat generated in the semiconductor chip 2 cannot be radiated, and the heat dissipation efficiency of the semiconductor chip 2 is poor. The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor chip capable of reducing product cost and improving reliability and heat dissipation efficiency during mounting.

[0013]

The above-mentioned problems can be solved by taking the following measures. In the invention according to claim 1, a semiconductor chip, a substrate on which the semiconductor chip is mounted by a flip chip bonding method, a sealing resin disposed on the substrate so as to seal the semiconductor chip, and the sealing. A cap disposed on the resin so as to be thermally connected to the semiconductor chip. The semiconductor chip is disposed as a spacer between the cap and the substrate. It is characterized in that the height of the sealing resin interposed between the cap and the substrate with respect to the substrate is regulated to a constant value.

According to a second aspect of the invention, in the semiconductor device according to the first aspect, a resin substrate is used as the substrate. According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, a paste material having good thermal conductivity is interposed between the semiconductor chip and the cap. Is.

Further, in the invention according to claim 4, in the above-mentioned claim 3, any one of a resin paste containing a metal filler, a resin paste containing a non-metallic filler, or a brazing material is used as the paste material. It is characterized by.

According to a fifth aspect of the invention, in the semiconductor device according to any one of the first to fourth aspects, the cap is provided with a radiation fin. In the invention according to claim 6, the invention according to claim 1
5. The semiconductor device according to any one of items 4 to 4, wherein an opening is provided at a position of the cap facing the semiconductor chip, in which a heat dissipation member thermally connected to the semiconductor chip is disposed. To do.

According to a seventh aspect of the invention, the semiconductor device according to the sixth aspect is characterized in that a paste material having good thermal conductivity is interposed in the opening.

Further, in the invention according to claim 8, in the above claim 7, any one of a resin paste containing a metal filler, a resin paste containing a non-metallic filler, or a brazing material is used as the paste material. It is characterized by.

[0019]

Each of the above means operates as follows. According to the first aspect of the invention, a spacer is provided between the cap and the substrate, and the spacer regulates the height of the sealing resin interposed between the cap and the substrate to be constant. As a result, the upper surface of the semiconductor device has a uniform height with respect to the substrate, and it is possible to prevent unevenness from occurring. Therefore, when the semiconductor device is mounted on the mounting substrate, it is possible to prevent the semiconductor device from being tilted and mounted. As a result, the semiconductor device can be reliably mounted on the mounting board, and the reliability at the time of mounting can be improved. Further, by using the semiconductor chip as the spacer, it is possible to improve the assembling property and reduce the product cost, as compared with the configuration in which the member serving as the spacer is separately provided.

According to the second aspect of the invention, since the resin substrate which is cheaper than the ceramic substrate or the like is used as the substrate, the product cost can be reduced.
Further, according to the inventions of claims 3 and 7, since the paste material having good thermal conductivity is interposed between the semiconductor chip and the cap, the heat generated in the semiconductor chip is capped via the paste material. Since heat is conducted to and heat is radiated, heat radiation efficiency can be improved.

Further, according to the inventions of claims 4 and 8, as the paste material, a resin paste containing a metal filler,
By using either a resin paste containing a non-metallic filler or a brazing material, both the thermal and mechanical bondability between the semiconductor chip and the cap can be improved, and the heat dissipation and the reliability of the semiconductor device can be improved. Can be achieved.

According to the invention described in claim 5, since the heat radiation fins are provided on the cap, the heat radiation efficiency of the heat generated in the semiconductor chip can be further improved.
Further, according to the invention of claim 6, the heat dissipation member is arranged by forming an opening at a position facing the semiconductor chip of the cap, in which a heat dissipation member thermally connected to the semiconductor chip is arranged. It is possible to mount the semiconductor device on the mounting substrate without providing the heat dissipating member and then dispose the heat dissipation member on the semiconductor device. Therefore, a heat dissipation member having a large shape can be generally attached afterwards, which also improves the mountability of the semiconductor device.

[0023]

Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a semiconductor device 20 according to a first embodiment of the present invention.
Is shown. This semiconductor device 20 is a so-called BGA (B
This is a semiconductor device of all grid array type, and is roughly composed of a semiconductor chip 21, a substrate 22, a cap 23, a sealing resin 24, and the like.

The semiconductor chip 21 has a plurality of solder bumps 25 formed on the bottom surface thereof, and the solder bumps 25 are flip-chip connected to the connection patterns 26 formed on the upper surface of the substrate 22 to form the semiconductor chip 21. Are mounted on the substrate 22. In this way, by adopting the configuration in which the semiconductor chip 21 is flip-chip connected to the substrate 22 using the solder bumps 25, the wiring length can be shortened as compared with the connection method using wires, and the semiconductor chip 21
Even if the operating speed of is increased, it is possible to cope with this.

The substrate 22 is, for example, a resin substrate made of glass-epoxy, which is less expensive than the conventionally used multilayer ceramic substrate shown in FIG. Therefore,
By using a resin substrate as the substrate 22, the product cost of the semiconductor device 20 can be reduced. As the material of the substrate 22, it is possible to use a resin substrate made of another material other than glass-epoxy, and a flexible printed circuit board may be applied.

A connection pattern 26 to which the solder bumps 25 formed on the semiconductor chip 21 are bonded is formed on the upper surface of the substrate 22, and a connection pad 28 is formed on the lower surface. Balls (solder balls) 27 serving as external connection terminals are arranged on the connection pads 28.

Further, the connection patterns 26 formed on the upper surface of the substrate and the connection pads 28 formed on the lower surface of the substrate are electrically connected by through holes (not shown) formed so as to vertically penetrate the substrate 22. It has been configured.
As described above, the semiconductor chip 21 is mounted on the substrate 22 by flip chip connection.

The cap 23 has a flat plate shape and is made of a metal material having a high thermal conductivity such as aluminum. The cap 23 is located above the semiconductor chip 21, a sealing resin 24 is interposed between the cap 23 and the substrate 22, and a paste material 29 is interposed between the cap 23 and the semiconductor chip 21. It is configured to be interposed. The cap 23 not only regulates the height position of the sealing resin 24, which will be described later, but also functions as a heat dissipation plate that dissipates heat generated in the semiconductor chip 21.

The sealing resin 24 is, for example, an epoxy resin which is a thermosetting plastic, and the semiconductor chip 21 is sealed by the sealing resin 24 and is protected from the outside. The paste material 29 has a function of thermally and mechanically connecting the cap 23 and the semiconductor chip 21 to each other, and includes a resin paste containing a metal filler (for example, silver) and a resin containing a non-metal filler (for example, silicon). It is possible to use a paste, a brazing material (for example, solder), or the like.

Since the resin paste containing a metal filler has high thermal conductivity, by using the resin paste containing a metal filler as the paste material 29, the heat generated in the semiconductor chip 21 can be efficiently transferred to the cap 23. Therefore, the heat dissipation characteristics can be improved.
Further, the resin paste containing a non-metal filler has a lower thermal conductivity than the resin paste containing a metal filler,
Since the cost is low, the cost of the semiconductor device 20 can be reduced. Further, the brazing filler metal tends to have a higher heating temperature at the time of arrangement as compared with the above-mentioned resin paste containing a metal filler and a resin paste containing a non-metal filler, but it is inexpensive and has good thermal conductivity.

Here, the semiconductor device 20 having the above structure
In the following, the height of the sealing resin 24 from the upper surface of the substrate 22 will be noted and described below. As described above, the sealing resin 24
Is interposed between the upper surface of the substrate 22 and the cap 23, the height position thereof is restricted to the height position of the cap 23. On the other hand, the cap 23 is arranged above the semiconductor chip 21 with the paste material 29 interposed therebetween. Since the thickness of the paste material 29 is actually a very small thickness dimension (illustrated in the drawing to be thicker than the actual thickness for clarity), the distance between the cap 23 and the substrate 22 is substantially the same. It is regulated by the height dimension of 21.

That is, the semiconductor chip 21 functions as a spacer that keeps the distance between the cap 23 and the substrate 22 constant. As described above, by using the semiconductor chip 21 as a spacer and keeping the distance between the cap 23 and the substrate 22 constant, the height of the sealing resin 24 interposed between the cap 23 and the substrate 22 is also uneven. There is no uniform condition.

Therefore, when the semiconductor device 20 is mounted on the mounting substrate (not shown), the gripping portion of the handling device (see FIG. 1).
Even if the semiconductor device 20 is gripped according to (2), the semiconductor device 20 is gripped normally (without inclination). For this reason, the semiconductor device 20 is always mounted on the mounting substrate in a normal state (a state without inclination), so that it is possible to prevent a defective connection between the ball 27 and the mounting substrate, and thereby to improve reliability during mounting. Can be improved.

In the structure of this embodiment, since the semiconductor chip 21 is used as the spacer, the semiconductor chip 21
It is not necessary to newly dispose a member that will be a spacer separately from the above. Therefore, it is possible to prevent an increase in the number of parts, improve the assemblability, and reduce the product cost. still,
It is not always necessary to use the semiconductor chip 21 as a spacer, and although the assembling property and the economical efficiency are inferior to those of the above-described first embodiment, the member serving as the spacer is the semiconductor chip 21
It may be configured separately from.

Next, a method of manufacturing the semiconductor device 20 having the above structure according to the first embodiment will be described with reference to FIGS. In addition, in the configuration shown in FIG. 2 to FIG.
The same components as those shown in FIG. 1 will be described with the same reference numerals. In order to manufacture the semiconductor device 20, first, a semiconductor chip 21 and a substrate 22 manufactured in separate steps are prepared,
As shown in FIG. 2, the semiconductor chip 21 is flip-chip connected to the connection pattern 26 formed on the upper surface of the substrate 22.

Subsequently, the paste material 29 is applied to the upper surface of the semiconductor chip 21 mounted on the substrate 22, and the sealing resin 24 is arranged around the chip by potting or the like while avoiding the position where the semiconductor chip 21 is arranged. To do. At this time, since the paste material 29 and the sealing resin 24 still have a predetermined viscosity but have not been cured, the upper surface thereof is in a state of being curved or biased as shown in FIG. .

When the paste material 29 and the sealing resin 24 are arranged as described above, the cap 23 is subsequently placed on the paste material 29 and the sealing resin 24, and the cap 2
A load is applied and pressed until 3 contacts the upper surface of the semiconductor chip 21. In this way, by pressing the cap 23 toward the semiconductor chip 21, the paste material 29 spreads on the upper surface of the semiconductor chip 21, and similarly, the sealing resin 24.
Spread on the upper surface of the substrate 22.

The cap 23 is attached to the semiconductor chip 21.
The semiconductor chip 21 functioning as a spacer determines the height position of the cap 23 with respect to the substrate 22 at the time when the cap 23 comes into contact with the upper surface. Further, since the height position of the cap 23 with respect to the substrate 22 is determined, the cap 23 and the substrate 2 are
The height of the sealing resin 24 interposed between the two is also defined. For this reason, the height of the sealing resin 24 is a uniform and uniform height regardless of the filling amount and the filling method of the sealing resin 24.

Subsequently, as shown in FIG. 4, heat treatment is performed to thermally cure the sealing resin 24 and the paste material 29,
As a result, the semiconductor device 20 shown in FIG. 1 is manufactured. In the method of manufacturing the semiconductor device 20 described above, since the semiconductor chip 21 is used as the spacer, a jig or the like for regulating the height of the cap 23 is not necessary, and the manufacturing process conventionally used is used. Therefore, the semiconductor device 20 can be easily manufactured.

Next, second to fourth embodiments of the present invention will be described with reference to FIGS. In each of the embodiments described below, the components corresponding to those of the semiconductor device 20 according to the first embodiment shown in FIG. 1 are designated by the same reference numerals in FIGS. 5 to 7, and the description thereof is omitted.

FIG. 5 shows a semiconductor device 30 which is a second embodiment of the present invention. Semiconductor device 30 according to the present embodiment
Is characterized in that the cap 23 is directly brought into contact with the upper surface of the semiconductor chip 21 without using the paste material 29 used in the semiconductor device 20 according to the first embodiment.

By thus directly contacting the semiconductor chip 21 with the cap 23, the number of parts and the number of assembling steps can be reduced, and the product cost of the semiconductor device 30 can be reduced. it can. It is also possible to prevent the cap 23 from tilting due to the paste material 29.

In this embodiment, since the cap 23 is adhered by the sealing resin 24, it is necessary to select the material of the sealing resin 24 as a material having good adhesion with the cap 23. FIG. 6 shows a semiconductor device 40 which is a third embodiment of the present invention.

The semiconductor device 40 according to the present embodiment is characterized in that the cap 23 used in the semiconductor device 20 according to the first embodiment is provided with a radiation fin 41. The heat dissipation fin 41 may be formed integrally with the cap 23, and the heat dissipation fin 4 may be provided on the upper portion of the cap 23.
1 may be attached.

As described above, the radiation fins 4 are attached to the cap 23.
Since the contact area with the outside air can be widened by providing 1, the heat generated in the semiconductor chip 21 can be radiated more efficiently as compared with the configuration in which the heat is radiated only by the cap 23. FIG. 7 shows a semiconductor device 50 which is a fourth embodiment of the present invention.

In the semiconductor device 50 according to this embodiment, the heat dissipation member 52 (heat dissipation fins in this embodiment) thermally connected to the semiconductor chip 21 is provided at all or part of the position of the cap 51 facing the semiconductor chip 21. (For example is described as an example).

As described above, by forming the opening 53 in the cap 51 in which the heat dissipation member 52 that is thermally connected to the semiconductor chip 21 is formed, the semiconductor device 50 is provided without the heat dissipation member 52. Can be mounted on the mounting substrate, and then the heat dissipation member 52 can be disposed on the semiconductor device 50. That is, the heat dissipation member 52 is mounted after the semiconductor device 50 is mounted.
Can be retrofitted.

In general, the heat dissipation member 52 has a large shape in order to improve heat dissipation efficiency. Therefore, it is troublesome to mount the heat dissipating member 52 having a large shape on the mounting substrate in a state where the heat dissipating member 52 is mounted on the semiconductor device 50. In addition, the user of the semiconductor device 50 may select the type of the heat dissipation member 52.

Therefore, by forming the opening portion 53 in which the heat dissipation member 52 is disposed in the cap 51, and by disposing the heat dissipation member 52 after mounting the semiconductor device 50, it is possible to add the heat dissipation member 52.
The mounting work of the semiconductor device 50 can be easily performed, and the user's request can be answered.

However, by forming the opening 53 in the cap 51, the sealing resin 24 described above with reference to FIG.
At the time of disposing, the sealing resin 24 may leak to the upper surface of the semiconductor chip 21. Therefore, the semiconductor device 50
In manufacturing of, the manufacturing method shown in FIGS. 8 and 9 is performed.

That is, when the cap 51 is pressed against the semiconductor chip 21, as shown in FIG. 8, a mask 54 of silicon rubber or the like is provided in the opening 53 formed in the cap 51 in advance. By pressing the cap 51 having the mask 54 arranged in the opening 53 against the semiconductor chip 21, the opening 53 is closed by the mask 54, and thus the sealing provided on the substrate 22 is performed. Even if the resin 24 is pressed by the cap 51, the sealing resin 24 can be prevented from leaking to the upper surface of the semiconductor chip 21.

Then, in the state shown in FIG. 8, heat treatment is performed to cure the sealing resin 24, and then the mask 54 is used.
Is removed from the cap 51. Since the mask 54 is made of a flexible material such as silicon rubber,
The work of removing the mask 54 from the cap 51 can be easily performed.

Subsequently, the semiconductor chip 21 in the opening 53
As shown in FIG. 9, the paste material 29 is disposed on the exposed upper surface of the semiconductor device 50 to form the semiconductor device 50 in a state before the heat dissipation member 52 is attached. As described above, when the heat radiation member 52 is attached by the user, shipping is performed in the state shown in FIG.

[0054]

As described above, according to the present invention, the following various effects can be realized. According to the invention described in claim 1, since the upper surface of the semiconductor device has a uniform height with respect to the substrate and it is possible to prevent the occurrence of bias, the semiconductor device is tilted when the semiconductor device is mounted on the mounting substrate. It can be prevented from being implemented. As a result, the semiconductor device can be reliably mounted on the mounting board, and the reliability at the time of mounting can be improved. Further, it is possible to improve the assembling property and reduce the product cost, as compared with the configuration in which the member serving as the spacer is separately provided.

According to the second aspect of the invention, since the resin substrate is cheaper than the ceramic substrate or the like, it is possible to reduce the product cost of the semiconductor device. Also,
According to the third and seventh aspects of the invention, the heat generated in the semiconductor chip is conducted to the cap through the paste material and radiated, so that the heat radiation efficiency can be improved.

Further, according to the inventions of claims 4 and 8, both the thermal bonding property and the mechanical bonding property between the semiconductor chip and the cap can be improved, and the heat radiation property and the reliability of the semiconductor device can be improved. You can Further, according to the invention of claim 5, the heat dissipation efficiency of the heat generated in the semiconductor chip can be further improved.

Further, according to the sixth aspect of the present invention, since a heat dissipating member having a large shape can be generally attached afterward, the mountability of the semiconductor device can be improved also by this.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a drawing for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention, showing the step of mounting a semiconductor chip on a substrate.

FIG. 3 is a drawing for explaining the manufacturing method of the semiconductor device according to the first embodiment of the present invention, and is a drawing for explaining the step of providing the cap on the upper surface of the provided resin.

FIG. 4 is a diagram for explaining the method for manufacturing the semiconductor device according to the first embodiment of the present invention, which is a diagram for explaining the step of curing the resin after disposing the cap.

FIG. 5 is a sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 6 is a sectional view showing a semiconductor device according to a third embodiment of the present invention.

FIG. 7 is a sectional view showing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 8 is a drawing for explaining the manufacturing method of the semiconductor device which is the fourth embodiment of the present invention, for explaining the step of disposing the cap.

FIG. 9 is a drawing for explaining the manufacturing method of the semiconductor device according to the fourth embodiment of the present invention, and is a drawing for explaining the step of disposing the paste.

FIG. 10 is a diagram showing an example of a conventional semiconductor device, and is a cross-sectional view showing an example in which a multilayer ceramic substrate is used as a substrate for mounting a semiconductor chip.

FIG. 11 is a diagram showing an example of a conventional semiconductor device, and is a cross-sectional view showing an example using a glass epoxy substrate as a substrate for mounting a semiconductor chip.

FIG. 12 is a cross-sectional view illustrating a problem of the semiconductor device shown in FIG.

[Explanation of symbols]

 20, 30, 40 Semiconductor device 21 Semiconductor chip 22 Substrate 23, 51 Cap 24 Sealing resin 25 Solder bump 26 Connection pattern 27 Ball 29 Paste material 41 Radiating fin 52 Radiating member 53 Opening 54 Mask

Claims (8)

[Claims] 1. A semiconductor chip, a substrate on which the semiconductor chip is mounted by a flip chip bonding method, a sealing resin disposed on the substrate so as to seal the semiconductor chip, and a sealing resin on the sealing resin. A cap disposed so as to be thermally connected to the semiconductor chip, wherein the semiconductor chip is arranged as a spacer between the cap and the substrate, and the cap is formed by the semiconductor chip. A semiconductor device, wherein a height of a sealing resin interposed between the substrate and the substrate is regulated to a constant value. 2. The semiconductor device according to claim 1, wherein a resin substrate is used as the substrate. 3. The semiconductor device according to claim 1, wherein a paste material having good thermal conductivity is interposed between the semiconductor chip and the cap. 4. The semiconductor device according to claim 3, wherein the paste material is a resin paste containing a metal filler, a resin paste containing a non-metal filler, or a brazing material. 5. The semiconductor device according to claim 1, wherein the cap is provided with a radiation fin. 6. The semiconductor device according to claim 1, wherein a heat dissipation member that is thermally connected to the semiconductor chip is provided at a position of the cap facing the semiconductor chip. A semiconductor device having a portion formed therein. 7. The semiconductor device according to claim 6, wherein a paste material having good thermal conductivity is interposed between the semiconductor chip and the heat dissipation member. 8. The semiconductor device according to claim 7, wherein the paste material is a resin paste containing a metal filler, a resin paste containing a non-metal filler, or a brazing material.