JPH09172043A - Tab tape carrier and semiconductor device - Google Patents

Tab tape carrier and semiconductor device

Info

Publication number
JPH09172043A
JPH09172043A JP7333067A JP33306795A JPH09172043A JP H09172043 A JPH09172043 A JP H09172043A JP 7333067 A JP7333067 A JP 7333067A JP 33306795 A JP33306795 A JP 33306795A JP H09172043 A JPH09172043 A JP H09172043A
Authority
JP
Japan
Prior art keywords
wiring
protective film
tab tape
tape carrier
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7333067A
Other languages
Japanese (ja)
Other versions
JP2723872B2 (en
Inventor
Mitsuhiro Matsutomo
光浩 松友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP7333067A priority Critical patent/JP2723872B2/en
Publication of JPH09172043A publication Critical patent/JPH09172043A/en
Application granted granted Critical
Publication of JP2723872B2 publication Critical patent/JP2723872B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Abstract

PROBLEM TO BE SOLVED: To prevent disconnection of traces and short-circuiting even if a gap is produced in the boundary between a TAB tape and sealing resin due to thermal stress during mounting, by covering the TAB tape carrier, except the ends of the wiring, with a protective film the surface of which is flattened. SOLUTION: Rolled copper foil is laminated on an insulating film 2 with adhesive 3 in-between, and wiring 4 is formed by photoetching or the like. A protective film 5 is applied to the wiring 4, and the application surface is flattened with a sheet or the like in-between using a roller or the like. The protective film 5 is cured to form a TAB tape carrier 10. The insulating film 2 uses a film made of polyimide or the like having a device hole 1 and LB holes 13 formed thereon. The protective film 5, having a flat surface, is formed so that the wiring, except for their ends, will be covered therewith, and phenol resin or the like identical with the adhesive 3 is used for the material of the protective film.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明はTABテープキャリ
ア及びこのTABテープキャリアを用いた半導体装置に
関する。
The present invention relates to a TAB tape carrier and a semiconductor device using the TAB tape carrier.

【0002】[0002]

【従来の技術】近年、半導体チップを実装するパッケー
ジは小型化されると共に、多ピン化されてきている。こ
の多ピン化に伴ないリードフレームの内部リードのピッ
チはより狭くなり、長い内部リードの場合はリード間シ
ョートが発生するという問題がある。この対策としてよ
り細いリードの形成が可能なTABテープの配線を内部
リードとして用いて半導体チップと外部リードとを接続
する方法が多用されてきている。以下従来のTABテー
プキャリア及び半導体装置について図面を用いて説明す
る。
2. Description of the Related Art In recent years, packages for mounting semiconductor chips have been reduced in size and increased in number of pins. With the increase in the number of pins, the pitch of the internal leads of the lead frame becomes narrower. In the case of a long internal lead, there is a problem that a short circuit between leads occurs. As a countermeasure, a method of connecting a semiconductor chip and external leads by using wiring of a TAB tape capable of forming finer leads as internal leads has been frequently used. Hereinafter, a conventional TAB tape carrier and a semiconductor device will be described with reference to the drawings.

【0003】図4(a),(b)は従来のTABテープ
キャリアの上面図及びB−B線拡大断面図、図5は従来
のTABテープキャリアを用いた半導体装置の断面図で
ある。
FIGS. 4A and 4B are a top view and an enlarged sectional view taken along line BB of a conventional TAB tape carrier, and FIG. 5 is a sectional view of a semiconductor device using the conventional TAB tape carrier.

【0004】図4(a),(b)においてTABテープ
キャリア10Aは、デバイスホール1とリードボンディ
ング(LB)ホール13が形成された厚さ約200μm
のポリイミド等からなる絶縁フィルム2と、このフィル
ム2上に接着剤3を介して形成されデバイスホール1内
に延在する厚さ約50μmの銅箔等からなる配線4とか
ら形成される。尚、図4(a)において6はスプロケッ
トホールである。
In FIGS. 4A and 4B, a TAB tape carrier 10A has a thickness of about 200 μm in which a device hole 1 and a lead bonding (LB) hole 13 are formed.
An insulating film 2 made of polyimide or the like, and a wiring 4 made of copper foil or the like having a thickness of about 50 μm and formed on the film 2 via an adhesive 3 and extending into the device hole 1. In FIG. 4A, reference numeral 6 denotes a sprocket hole.

【0005】次に、このように構成された従来のTAB
テープキャリアを用いた半導体装置の製造方法について
図5を併用して説明する。まずリードフレームのアイラ
ンド11上に半導体チップ7をダイマウントし、次でこ
の半導体チップ7をTABテープキャリア10Aのデバ
イスホール1内に位置合わせしてチップ7のボンディン
グパッド上に配線4の先端をボンディングする。次にL
Bホール13内で配線4の端部を外部リード8に金型を
用いたプレスによりボンディングすると共に配線4をT
ABテープより分離させる。その後エポキシ等の樹脂9
により半導体チップ7等を封止したのち、外部リード8
を成型して樹脂封止型の半導体装置を完成させる。
Next, the conventional TAB constructed as described above
A method for manufacturing a semiconductor device using a tape carrier will be described with reference to FIG. First, the semiconductor chip 7 is die-mounted on the island 11 of the lead frame. Next, the semiconductor chip 7 is positioned in the device hole 1 of the TAB tape carrier 10A, and the tip of the wiring 4 is bonded on the bonding pad of the chip 7. I do. Then L
In the B hole 13, the end of the wiring 4 is bonded to the external lead 8 by pressing using a mold, and the wiring 4 is
Separate from AB tape. Then, resin 9 such as epoxy
After sealing the semiconductor chip 7 and the like with the external leads 8
To complete a resin-sealed semiconductor device.

【0006】[0006]

【発明が解決しようとする課題】一般に樹脂封止された
半導体装置は、保管環境下の湿度により水分を吸収す
る。特にTABテープキャリアの絶縁フィルム2はポリ
イミド等の有機物で形成されている為多くの水分を吸収
する。水分が吸収された状態で半導体装置をプリント基
板等に半田実装すると、実装時の200℃以上の熱スト
レスにより吸着した水分が気化し膨張する。水分の蒸発
は絶縁フィルム2の近辺で顕著になる。
Generally, a semiconductor device sealed with a resin absorbs moisture due to humidity in a storage environment. In particular, since the insulating film 2 of the TAB tape carrier is formed of an organic material such as polyimide, it absorbs much water. When the semiconductor device is solder-mounted on a printed circuit board or the like in a state where the moisture is absorbed, the absorbed moisture is vaporized and expanded due to thermal stress of 200 ° C. or more at the time of mounting. Evaporation of water becomes significant near the insulating film 2.

【0007】すなわち図6(a)に示すように、樹脂9
により配線4は封止されるが、水蒸気の発生により最も
密着性の悪い配線4と樹脂9との界面が剥離し図6
(b)に示すように、隙間12Aが生じて配線4が樹脂
9から外れる。その後水蒸気がパッケージの外部へ放出
されたり、冷却により圧縮されて絶縁フィルム2が復元
しても図6(c)に示すように、配線4が元の位置に戻
らず、配線4が断線したり、配線4同志がショートした
りするという問題点がある。
That is, as shown in FIG.
6, the interface between the wiring 4 having the lowest adhesion and the resin 9 is peeled off due to the generation of water vapor.
As shown in (b), a gap 12 </ b> A occurs and the wiring 4 comes off the resin 9. After that, even if the water vapor is released to the outside of the package or is compressed by cooling to restore the insulating film 2, the wiring 4 does not return to its original position as shown in FIG. In addition, there is a problem that the wirings 4 are short-circuited.

【0008】これは配線4を有するTABテープと樹脂
9との界面が凹凸状になっている為である。
This is because the interface between the TAB tape having the wiring 4 and the resin 9 is uneven.

【0009】本発明の目的は、上記欠点を除去し、半導
体装置の実装時の熱ストレスによりTABテープと封止
樹脂の界面に隙間を生じても配線の断線やショートの発
生することのない信頼性の向上したTABテープキャリ
ア及び半導体装置を提供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to eliminate the above-mentioned drawbacks and to provide a reliability that prevents disconnection or short-circuit of wiring even if a gap is formed at the interface between the TAB tape and the sealing resin due to thermal stress during mounting of the semiconductor device. An object of the present invention is to provide a TAB tape carrier and a semiconductor device with improved performance.

【0010】[0010]

【課題を解決するための手段】第1の発明のTABテー
プキャリアは、デバイスホールが形成された絶縁フィル
ム上に接着剤を介して形成された金属箔からなる複数の
配線を有するTABテープキャリアにおいて、前記配線
は端部を除きその表面が平坦化された保護膜により覆わ
れていることを特徴とするものである。
A TAB tape carrier according to a first aspect of the present invention is a TAB tape carrier having a plurality of wirings made of a metal foil formed through an adhesive on an insulating film in which device holes are formed. The surface of the wiring is covered with a flattened protective film except for the end portions.

【0011】第2の発明の半導体装置は、デバイスホー
ルが形成された絶縁フィルムと、この絶縁フィルム上に
接着剤を介して形成されデバイスホール内に延在する金
属箔からなる配線と、この配線の端部を除く表面に形成
され平坦化された保護膜と、前記デバイスホール部に配
設され前記配線の一方の端部にボンディングパッドが接
続された半導体チップと、前記配線の他方の端部に接続
されたリードと、前記半導体チップと前記配線と前記保
護膜と前記絶縁フィルムと前記リードの一部とを封止す
る樹脂とを含むことを特徴とするものである。
According to a second aspect of the present invention, there is provided a semiconductor device having an insulating film in which a device hole is formed, a wiring made of a metal foil formed on the insulating film via an adhesive and extending into the device hole, and A flattened protective film formed on the surface excluding the end of the semiconductor chip, a semiconductor chip provided in the device hole portion and having a bonding pad connected to one end of the wiring, and the other end of the wiring And a resin for sealing the semiconductor chip, the wiring, the protective film, the insulating film, and a part of the lead.

【0012】[0012]

【発明の実施の形態】次に本発明について図面を参照し
て説明する。図1(a),(b)は本発明の第1の実施
の形態を説明する為のTABテープキャリアの上面図及
びA−A線拡大断面図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIGS. 1A and 1B are a top view and an enlarged cross-sectional view taken along line AA of a TAB tape carrier for explaining a first embodiment of the present invention.

【0013】図1(a),(b)においてTABテープ
キャリア10は、デバイスホール1とLBホール13と
が形成されたポリイミド等の厚さ約200μmの絶縁フ
ィルム2と、この絶縁フィルム2上に樹脂からなる接着
剤3を介して形成されデバイスホール1内に延在する銅
箔等からなる厚さ約50μmの配線4と、この配線4の
端部を除く表面を覆うように形成された表面が平坦な樹
脂からなる厚さ約50μmの保護膜5とから主に構成さ
れている。尚、図1(a)において6はスプロケットホ
ールである。接着剤3及び保護膜5としては、フェノー
ル樹脂,エポキシ樹脂又はポリイミド樹脂を用いること
ができる。
1 (a) and 1 (b), a TAB tape carrier 10 has an insulating film 2 of about 200 μm in thickness, such as polyimide, in which device holes 1 and LB holes 13 are formed. A wiring 4 having a thickness of about 50 μm made of copper foil or the like and extending into the device hole 1 formed through an adhesive 3 made of a resin, and a surface formed so as to cover a surface excluding an end of the wiring 4 And a protective film 5 made of flat resin and having a thickness of about 50 μm. In FIG. 1A, reference numeral 6 denotes a sprocket hole. As the adhesive 3 and the protective film 5, a phenol resin, an epoxy resin, or a polyimide resin can be used.

【0014】このようなTABテープキャリア10を形
成する為には、従来と同様に絶縁フィルム2上に接着剤
(厚さ約20μm)3を介して圧延銅箔をラミネート
し、フォトエッチング技術により配線4を形成する。次
に保護膜5として接着剤3と同一樹脂を配線4上に塗布
したのち、塗布面をシート等を介してローラ等で平坦化
する。その後この保護膜5を硬化させることにより平坦
化された保護膜5を有するTABテープキャリア10が
完成する。
In order to form such a TAB tape carrier 10, a rolled copper foil is laminated on an insulating film 2 via an adhesive (about 20 μm thick) 3 as in the prior art, and the wiring is formed by photo-etching technology. 4 is formed. Next, after applying the same resin as the adhesive 3 on the wiring 4 as the protective film 5, the applied surface is flattened by a roller or the like via a sheet or the like. Then, the protective film 5 is cured to complete the TAB tape carrier 10 having the flattened protective film 5.

【0015】図2は本発明の第2の実施の形態を説明す
る為の半導体装置の断面図である。以下図1を併用して
説明する。
FIG. 2 is a sectional view of a semiconductor device for explaining a second embodiment of the present invention. This will be described with reference to FIG.

【0016】図2において半導体装置は、デバイスホー
ル1が形成された絶縁フィルム2と、この絶縁フィルム
2上に接着剤3を介して形成されデバイスホール1内に
延在する銅箔からなる配線4と、この配線4の端部を除
く表面に形成され平坦化された保護膜5と、デバイスホ
ール1内に配設され配線4の一方の端部にボンディング
パッドが接続されたアイランド11上の半導体チップ7
と、配線4の他方の端部に接続された外部リード8と、
半導体チップ7と保護膜5と配線4と絶縁フィルム2と
外部リード8の一部とを封止するエポキシ等の樹脂9と
から主に構成されている。
In FIG. 2, a semiconductor device includes an insulating film 2 having a device hole 1 formed therein, and a wiring 4 made of copper foil formed on the insulating film 2 via an adhesive 3 and extending into the device hole 1. A protective film 5 formed on the surface excluding the end of the wiring 4 and flattened; and a semiconductor on the island 11 provided in the device hole 1 and having a bonding pad connected to one end of the wiring 4. Chip 7
And an external lead 8 connected to the other end of the wiring 4,
It is mainly composed of a semiconductor chip 7, a protective film 5, wires 4, an insulating film 2, and a resin 9 such as epoxy which seals a part of the external leads 8.

【0017】次に、このように構成された半導体装置を
プリント基板等に半田実装する場合について図3を併用
して説明する。
Next, a case where the semiconductor device thus configured is mounted on a printed circuit board by soldering will be described with reference to FIG.

【0018】樹脂封止された半導体装置は保管環境下で
水分を吸収する。この水分は実装時の熱により蒸発し、
その熱ストレスにより図3(a)に示すように、保護膜
5と樹脂9とが湾曲して剥離し、その界面に隙間12を
生じる。
The resin-sealed semiconductor device absorbs moisture in a storage environment. This moisture evaporates due to the heat during mounting,
As shown in FIG. 3A, the thermal stress causes the protective film 5 and the resin 9 to be curved and separated, and a gap 12 is formed at the interface.

【0019】しかし、水蒸気がパッケージの外部へ放出
されたり、冷却により絶縁フィルム2が復元すると、図
3(b)に示すように、樹脂9と保護膜5の界面の隙間
12はほとんどなくなる。この絶縁フィルム2の復元に
よっても配線4は保護膜5により保持されている為、従
来のように樹脂9の凹凸部にぶつかり、ずれて配線が断
線さたりショートすることはない。特に接着剤3と保護
膜5とを同一の樹脂により形成することにより、配線4
は接着剤3と保護膜5の内部に完全に埋設される為、熱
ストレスによって配線4が剥離することはなくなる。こ
の為配線4のずれを完全に抑制することができる。
However, when water vapor is released to the outside of the package or when the insulating film 2 is restored by cooling, the gap 12 at the interface between the resin 9 and the protective film 5 almost disappears, as shown in FIG. Even when the insulating film 2 is restored, the wiring 4 is held by the protective film 5, so that the wiring 4 does not hit the uneven portion of the resin 9 as in the related art, so that the wiring is not disconnected or short-circuited. In particular, by forming the adhesive 3 and the protective film 5 with the same resin, the wiring 4
Is completely embedded in the adhesive 3 and the protective film 5, so that the wiring 4 does not peel off due to thermal stress. For this reason, the displacement of the wiring 4 can be completely suppressed.

【0020】[0020]

【発明の効果】以上説明したように本発明は、絶縁フィ
ルム上に形成された配線上に、平坦化された保護膜を有
するTABテープキャリアを用いて樹脂封止型の半導体
装置を形成することにより、半田実装においても従来の
ように熱ストレスにより配線がずれて断線やショート不
良が発生することがなくなる為、信頼性の向上した半導
体装置が得られる。
As described above, according to the present invention, a resin-encapsulated semiconductor device is formed on a wiring formed on an insulating film by using a TAB tape carrier having a flattened protective film. As a result, even in the solder mounting, the wiring is not shifted due to the thermal stress as in the related art, so that the disconnection or the short-circuit failure does not occur, so that a semiconductor device with improved reliability can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態を説明する為のTA
Bテープキャリアの上面図及び断面図。
FIG. 1 is a diagram showing a TA for explaining a first embodiment of the present invention;
The top view and sectional drawing of B tape carrier.

【図2】本発明の第2の実施の形態を説明する為の半導
体装置の断面図。
FIG. 2 is a sectional view of a semiconductor device for explaining a second embodiment of the present invention;

【図3】本発明の効果を説明する為の配線近傍の断面
図。
FIG. 3 is a cross-sectional view showing the vicinity of a wiring for explaining the effect of the present invention.

【図4】従来のTABテープキャリアの上面図及び断面
図。
FIG. 4 is a top view and a cross-sectional view of a conventional TAB tape carrier.

【図5】従来の半導体装置の断面図。FIG. 5 is a cross-sectional view of a conventional semiconductor device.

【図6】従来の半導体装置の欠点を説明する為の配線近
傍の断面図。
FIG. 6 is a cross-sectional view near a wiring for explaining a defect of a conventional semiconductor device.

【符号の説明】[Explanation of symbols]

1 デバイスホール 2 絶縁フィルム 3 接着剤 4 配線 5 保護膜 6 スプロケットホール 7 半導体チップ 8 外部リード 9 樹脂 10,10A TABテープキャリア 11 アイランド 12,12A 隙間 13 LBホール DESCRIPTION OF SYMBOLS 1 Device hole 2 Insulating film 3 Adhesive 4 Wiring 5 Protective film 6 Sprocket hole 7 Semiconductor chip 8 External lead 9 Resin 10, 10A TAB tape carrier 11 Island 12, 12A Gap 13 LB hole

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 デバイスホールが形成された絶縁フィル
ム上に接着剤を介して形成された金属箔からなる複数の
配線を有するTABテープキャリアにおいて、前記配線
は端部を除きその表面が平坦化された保護膜により覆わ
れていることを特徴とするTABテープキャリア。
1. A TAB tape carrier having a plurality of wirings made of a metal foil formed on an insulating film having device holes formed thereon with an adhesive therebetween via a bonding agent, wherein the wirings have flat surfaces except for ends. A TAB tape carrier, which is covered with a protective film.
【請求項2】 保護膜は接着剤と同一材料で形成されて
いる請求項1記載のTABテープキャリア。
2. The TAB tape carrier according to claim 1, wherein the protective film is formed of the same material as the adhesive.
【請求項3】 保護膜はフェノール樹脂又はエポキシ樹
脂又はポリイミド樹脂から形成されている請求項1又は
請求項2記載のTABテープキャリア。
3. The TAB tape carrier according to claim 1, wherein the protective film is formed of a phenol resin, an epoxy resin, or a polyimide resin.
【請求項4】 デバイスホールが形成された絶縁フィル
ムと、この絶縁フィルム上に接着剤を介して形成されデ
バイスホール内に延在する金属箔からなる配線と、この
配線の端部を除く表面に形成され平坦化された保護膜
と、前記デバイスホール部に配設され前記配線の一方の
端部にボンディングパッドが接続された半導体チップ
と、前記配線の他方の端部に接続されたリードと、前記
半導体チップと前記配線と前記保護膜と前記絶縁フィル
ムと前記リードの一部とを封止する樹脂とを含むことを
特徴とする半導体装置。
4. An insulating film having a device hole formed therein, a wiring made of a metal foil formed on the insulating film via an adhesive and extending into the device hole, and a surface excluding an end of the wiring. A formed and flattened protective film, a semiconductor chip disposed in the device hole portion and having a bonding pad connected to one end of the wiring, and a lead connected to the other end of the wiring, A semiconductor device comprising: a resin for sealing the semiconductor chip, the wiring, the protective film, the insulating film, and a part of the lead.
【請求項5】 保護膜は接着剤と同一樹脂から形成され
ている請求項4記載の半導体装置。
5. The semiconductor device according to claim 4, wherein the protective film is formed of the same resin as the adhesive.
JP7333067A 1995-12-21 1995-12-21 TAB tape carrier and semiconductor device Expired - Lifetime JP2723872B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7333067A JP2723872B2 (en) 1995-12-21 1995-12-21 TAB tape carrier and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7333067A JP2723872B2 (en) 1995-12-21 1995-12-21 TAB tape carrier and semiconductor device

Publications (2)

Publication Number Publication Date
JPH09172043A true JPH09172043A (en) 1997-06-30
JP2723872B2 JP2723872B2 (en) 1998-03-09

Family

ID=18261902

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2723872B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6867471B2 (en) 2002-08-29 2005-03-15 Infineon Technologies Ag Universal package for an electronic component with a semiconductor chip and method for producing the universal package

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53101270A (en) * 1977-02-16 1978-09-04 Seiko Epson Corp Substraet for semiconductor device
JPH04162734A (en) * 1990-10-26 1992-06-08 Hitachi Ltd Semiconductor device and formation therefor
JPH04291737A (en) * 1991-03-20 1992-10-15 Toshiba Corp Tab film carrier tape
JPH06112267A (en) * 1992-09-29 1994-04-22 Nec Kansai Ltd Tab semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53101270A (en) * 1977-02-16 1978-09-04 Seiko Epson Corp Substraet for semiconductor device
JPH04162734A (en) * 1990-10-26 1992-06-08 Hitachi Ltd Semiconductor device and formation therefor
JPH04291737A (en) * 1991-03-20 1992-10-15 Toshiba Corp Tab film carrier tape
JPH06112267A (en) * 1992-09-29 1994-04-22 Nec Kansai Ltd Tab semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6867471B2 (en) 2002-08-29 2005-03-15 Infineon Technologies Ag Universal package for an electronic component with a semiconductor chip and method for producing the universal package

Also Published As

Publication number Publication date
JP2723872B2 (en) 1998-03-09

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