JPH06112267A - Tab semiconductor device - Google Patents

Abstract

PURPOSE:To provide a semiconductor device wherein the short circuit between conductive patterns due to fine foreign matter is prevented and a drop in a withstand voltage is prevented in a TAB semiconductor device wherein the number of leads is extremely large and conductive patterns are crowded. CONSTITUTION:In a TAB semiconductor device, a conductive foil is laminated on an insulating film 1 in which a through hole 1b has been made, the conductive foil is extended into the etching hole 1b, conductive patterns 2 including inner leads 2a are arranged in the position of a formed TAB through hole 1a, and electrodes for a semiconductor pellet 3 are connected electrically to the inner leads 2a. In the TAB semiconductor device, the conductive patterns 2 on the insulating film 1 near the inner leads 2a are covered with a resin 6. Since the conductive patterns in which the interval between the inner leads 2a is narrow and which are crowded are covered with the resin 6, it is possible to prevent the short circuit between the conductive patterns even when foreign matter adheres to the parts. In addition, the foreign matter can be detected easily, and the time for the cleaning operation of a bonding tool can be set properly.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device using a TAB tape.

[0002]

2. Description of the Related Art An example of a TAB type semiconductor device will be described with reference to FIG. In the figure, reference numeral 1 designates a long insulating film, and sprocket holes 1a, 1a for feeding are formed along both sides thereof, and rectangular through holes 1b are formed at equal intervals in the longitudinal direction. Reference numeral 2 is a conductive pattern formed by etching a conductive foil laminated on the insulating film 1, and extends inside the through hole 1b to form the inner lead 2a. The conductive pattern 2 is plated with gold or the like to improve the bonding property.

The TAB tape having such a structure is wound on a reel for transportation and storage, and is unwound from the reel and supplied in the manufacturing process.

Reference numeral 3 denotes a semiconductor pellet arranged at the position of the through hole 1b, which is supported on a support table 4 at a fixed lower position along the transport path of the TAB tape as shown in FIG. Nothing) and the inner lead 2a are positioned and the bump electrode and the overlapping portion of the inner lead 2a are thermocompression-bonded to each other by the bonding tool 5 arranged above the support table 4 so as to be vertically movable.

The TAB tape to which the semiconductor pellets 3 are connected in this way is rewound on the reel, aged,
It is supplied to processes such as inspection and display.

Since the inner leads 2a of this semiconductor device are formed by etching a conductive foil, the lead width and the lead interval can be reduced as compared with the case where a lead frame is used, and there are many highly integrated external extraction electrodes. For example, it is applied to an integrated circuit device for driving a liquid crystal display device. Further, the thermocompression bonding between the bump electrode and the inner lead 2a is such that the lead width, the thickness of the semiconductor pellet 3 and the height of the bump electrode when the lead spacing becomes minute, the dispersion of the inner lead 2a, the parallelism of the bonding tool 5 and the semiconductor pellet 3, etc. Therefore, when the number of leads increases, a capillary-shaped bonding tool (not shown) is used instead of the bonding tool 5 for collective bonding shown in FIG. 4, one point for each inner lead 2a. I try to bond.

[0007]

By the way, when the bump electrode of the semiconductor pellet 3 and the inner lead 2a are thermocompression-bonded, the bonding tool 5 is pressed against the lead 2a, so that the metal plated on the conductive pattern 2 is peeled off. And then adheres to the bonding tool 5, and the plating pieces come off from the bonding tool 5 as the bonding is repeated.
There was a risk of falling on the tape. Therefore, in a semiconductor device in which the conductive patterns 2 are closely spaced, even if the flakes are fine, there is a possibility that the conductive patterns 2 and 2 may be short-circuited and the semiconductor device may be defective. However, it is difficult to detect it by visual observation, and even when the image is magnified and observed using a television camera, automatic discrimination is difficult because the conductive pattern and the flaking piece have the same color. Further, if the conductive pattern 2 is fine, the mechanical strength is small, and if the TAB tape is twisted or a local excessive tension is applied, the conductive pattern is broken.

[0008]

SUMMARY OF THE INVENTION The present invention has been proposed for the purpose of solving the above-mentioned problems, in which a conductive foil is laminated on an insulating film having a through hole, and the conductive foil is etched to form the inside of the through hole. In the TAB type semiconductor device in which the electrode of the semiconductor pellet and the inner lead electrically connected to the inner lead are arranged in the through hole position of the TAB tape having the conductive pattern including the inner lead extending to the inner lead. Provided is a TAB semiconductor device in which a conductive pattern on a film is covered with a resin.

[0009]

In the TAB type semiconductor device according to the present invention, since the conductive pattern is covered with resin, it is possible to prevent a short circuit between conductive patterns due to foreign matter. Further, as the coating resin, a color different from that of the foreign matter of the plating or the flaking pieces coated with the conductive pattern can be selected, and the foreign matter can be easily observed by setting a color having a large color contrast.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to FIG.
In the figure, the same reference numerals as those in FIG. The only difference in the figure is that the insulating film 1 adjacent to the inner lead 2a and the conductive pattern 2 densely stacked on the insulating film 1 are covered with the resin 6.

This resin 6 has a large contrast with respect to the color of the foreign matter. For example, when the foreign matter is gold, a green resin can be used to prevent a short circuit between the conductive patterns 2 and 2 and the foreign matter is generated. Can be easily known, and the time for cleaning the bonding tool 5 can be set appropriately.

FIG. 2 shows another embodiment of the present invention. In this embodiment, the resin 6 of FIG. 1 embodiment is applied twice to two layers of the resin 6a and the resin 6b, and the thickness of the resin 6a of the first layer is set to be equal to or less than the thickness of the conductive pattern 2. And the thickness of the resin 6b are set to be larger than the thickness of the conductive pattern 2. This double-coated portion is set in a dense portion adjacent to the inner lead 2a of the conductive pattern 2, and may be even more in a portion where the distance between the conductive patterns 2 is larger than the diameter of the foreign matter.

As a result, the periphery of the through hole 1b of the insulating film 1 is reinforced, and even if the insulating film 1 is flexibly deformed, the deformation around the through hole 1b is suppressed, and the inner leads 2a are not twisted or evenly spaced. When the semiconductor device is mounted, the outer lead (no reference numeral) is made of only the thin resin 6a, so that it can be easily bent and deformed, and the mountability is good.

Further, the resins 6a and 6b are set to colors different from the color of the insulating film 1, and the combination of the coating pattern and the color allows the semiconductor device model name, polarity, lot number, manufacturing date, etc. Can be displayed.

[0015]

As described above, according to the present invention, the inner leads 2a are closely spaced and therefore densely packed.
Since the surface of the resin is coated with the resin 6, it is possible to prevent a short circuit between conductive patterns and a decrease in withstand voltage even if a foreign matter adheres to this portion.

Further, it is easy to find foreign matter, and the time for cleaning the bonding tool can be set appropriately.

[Brief description of drawings]

FIG. 1 is a side sectional view of a TAB type semiconductor device showing an embodiment of the present invention.

FIG. 2 is a side sectional view showing another embodiment of the present invention.

FIG. 3 is a perspective view showing an example of a TAB semiconductor device.

FIG. 3 is a side sectional view illustrating a method of manufacturing a semiconductor device.

[Explanation of symbols]

 1 Insulating Film 1a Through Hole 2 Conductive Pattern 2a Inner Lead 3 Semiconductor Pellets 6, 6a, 6b Resin

Claims (3)

[Claims] 1. A conductive foil is laminated on an insulating film having a through hole, and the conductive foil is etched to form a conductive pattern including an inner lead extending in the through hole at a through hole position of a TAB tape. Arranged semiconductor pellets A TAB type semiconductor device in which electrodes of semiconductor pellets and inner leads are electrically connected, wherein a conductive pattern on an insulating film near the inner leads is covered with resin. . 2. The TAB semiconductor device according to claim 1, wherein the resin coating the conductive pattern is formed in multiple layers. 3. The TAB type semiconductor device according to claim 2, wherein the resin coating the conductive pattern also serves as a display pattern.