JPH09162233A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH09162233A
JPH09162233A JP7320505A JP32050595A JPH09162233A JP H09162233 A JPH09162233 A JP H09162233A JP 7320505 A JP7320505 A JP 7320505A JP 32050595 A JP32050595 A JP 32050595A JP H09162233 A JPH09162233 A JP H09162233A
Authority
JP
Japan
Prior art keywords
semiconductor chip
semiconductor device
resin
tape
flexible resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7320505A
Other languages
Japanese (ja)
Other versions
JP2685039B2 (en
Inventor
Tsuguo Nakamura
嗣雄 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP7320505A priority Critical patent/JP2685039B2/en
Publication of JPH09162233A publication Critical patent/JPH09162233A/en
Application granted granted Critical
Publication of JP2685039B2 publication Critical patent/JP2685039B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a cooling means capable of simultaneously attaining the high performance and compactness and light weight of a semiconductor device. SOLUTION: A cooling plate 6 is fixed to the surface on the opposite side to formed the surface of the bump electrode 1a of a semiconductor chip 1. The semiconductor chip 1 and the cooling plate 6 are coated with sealing resin 4 excluding the surface on the opposite side of the bonded surface of the cooling plate 6 onto the semiconductor chip 1. Furthermore, the sealing resin 4 coats the surface of a flexible resin tape 2 wherein no wiring lead 3 is formed in even thickness extending over the parts near the four end parts of the surface excluding said exposed surface 8 of the cooling plate 6. At this time, the sides of the cooling plate 6 is covered with the sealing resin 4 while the resin surface and the surface of the cooling plate 6 are made almost flush with each other.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は半導体装置に関し、
特にテープキャリアを用いた表面実装用半導体装置の中
でテープBGA(Ball Grid Array)パッケージの放熱
構造に関する。
The present invention relates to a semiconductor device,
Particularly, the present invention relates to a heat dissipation structure of a tape BGA (Ball Grid Array) package in a surface mounting semiconductor device using a tape carrier.

【0002】[0002]

【従来の技術】テープキャリアとは、中央にデバイスホ
ールを開口した可撓性樹脂テープの一面に金属箔を接着
し、この金属箔にエッチング等を行って所定の導電パタ
ーンを形成しつつ前記デバイスホール内に導体リードを
突出させ、この導体リードに対し半導体チップの電極パ
ッドを接続した半導体装置であって、連続的に回路基板
への実装を可能とする技術である。また、半導体チップ
を樹脂等で封止したものをテープキャリアパッケージ
(TCP)と呼ばれている。
2. Description of the Related Art A tape carrier is a device in which a metal foil is adhered to one surface of a flexible resin tape having a device hole at the center, and the metal foil is etched to form a predetermined conductive pattern. This is a semiconductor device in which a conductor lead is projected into a hole and an electrode pad of a semiconductor chip is connected to the conductor lead, which is a technique that enables continuous mounting on a circuit board. A semiconductor chip sealed with resin or the like is called a tape carrier package (TCP).

【0003】また、TCP技術を用い、半導体装置側に
回路基板と接続するための半田ボールを形成し、回路基
板への実装性を向上させた新パッケージとしてBGAが
提案され、半導体装置側基材としてガラスエポキシ基板
を用いたプラスチックBGA、可撓性樹脂テープを用い
たテープBGAが実用化されて来ている。
In addition, BGA is proposed as a new package in which a solder ball for connecting to a circuit board is formed on the semiconductor device side by using TCP technology to improve the mountability on the circuit board. As such, a plastic BGA using a glass epoxy substrate and a tape BGA using a flexible resin tape have been put into practical use.

【0004】TCP方式における放熱手段として、例え
ば実開平3−88350号公報に開示されているよう
に、放熱手段がモールド樹脂内に埋め込まれ放熱手段の
表面が外部に露出していない形式のものがある。
As a heat dissipating means in the TCP system, for example, as disclosed in Japanese Utility Model Laid-Open No. 3-88350, there is a type in which the heat dissipating means is embedded in a mold resin and the surface of the heat dissipating means is not exposed to the outside. is there.

【0005】また、特開平4−245462号公報に開
示されているような、放熱手段が半導体装置に外付けさ
れ、放熱手段の表面、或は放熱フィンを含む放熱手段が
外部に露出した構造のものも大きなパワーを必要とする
バイポーラ型半導体装置およびパワートランジスタの放
熱手段として一般に使用されている。
Further, as disclosed in Japanese Patent Application Laid-Open No. 4-245462, the heat dissipation means is externally attached to the semiconductor device, and the surface of the heat dissipation means or the heat dissipation means including the heat dissipation fin is exposed to the outside. Those are also commonly used as heat dissipation means for bipolar semiconductor devices and power transistors that require large power.

【0006】[0006]

【発明が解決しようとする課題】上述したBGA型もし
くはTCP(Tape Carrier Package)型の半導体装置
は、高密度実装パッケージとして小型軽量の電子機器に
多く採用されている。
The BGA type or TCP (Tape Carrier Package) type semiconductor device described above is often used as a high-density mounting package in small and lightweight electronic devices.

【0007】しかしながら、電子機器の高機能、高速化
が進む中で半導体素子への要求仕様はますます厳しくな
り、特に熱特性が半導体素子の高性能化の上で周波数特
性と並び重要な要素となってきている。
However, as electronic devices become more sophisticated and faster, the required specifications for semiconductor elements are becoming more and more stringent. In particular, thermal characteristics are important factors along with frequency characteristics for improving the performance of semiconductor elements. It has become to.

【0008】このような技術動向の中で前述の放熱手段
においては、 1)放熱手段がモールド樹脂内に埋め込まれているた
め、放熱特性が樹脂の熱伝達特性に大きく影響を受け
て、十分な放熱効果が得にくい。 2)放熱手段の外形寸法が大きく、電子機器の小型軽量
化ニーズに合わない。 等の問題点が顕在化していた。
Among the above-mentioned technical trends, in the above-mentioned heat radiating means: 1) Since the heat radiating means is embedded in the mold resin, the heat radiating characteristic is greatly affected by the heat transfer characteristic of the resin, and the heat radiating characteristic is sufficient. It is difficult to obtain the heat dissipation effect. 2) The external dimensions of the heat dissipation means are large and do not meet the needs for downsizing and weight saving of electronic devices. Problems such as these were becoming apparent.

【0009】そこで本発明は、上記従来技術の問題点に
鑑み、半導体素子の高性能化と小型・軽量化を同時に達
成可能な放熱手段を有した高密度実装パッケージである
半導体装置を提供することを目的とする。
In view of the above-mentioned problems of the prior art, the present invention provides a semiconductor device which is a high-density packaging package having a heat dissipation means capable of simultaneously achieving high performance and small size / light weight of a semiconductor element. With the goal.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するため
に本発明の半導体装置は、中央にデバイスホールが開孔
された可撓性樹脂テープと、該可撓性樹脂テープの第1
主面に設けられ、一端が前記デバイスホール内に突出し
てインナーリードになされ他端にランドが形成された配
線リードとを有するテープキャリアと、前記インナーリ
ードに接続された電極端子を有する半導体チップとを有
し、少なくとも前記半導体チップの電極端子形成面を樹
脂封止するとともに、前記可撓性樹脂テープの第2主面
に第1主面のランドに対向する範囲を除きガードリング
を形成し、さらに前記ランド上に導電性バンプを備えた
ことを特徴とする。
In order to achieve the above object, a semiconductor device of the present invention comprises a flexible resin tape having a device hole at the center, and a first flexible resin tape.
A tape carrier provided on the main surface, having one end protruding into the device hole to be an inner lead and having a wiring lead having a land formed at the other end; and a semiconductor chip having an electrode terminal connected to the inner lead. And having at least an electrode terminal forming surface of the semiconductor chip resin-sealed, and forming a guard ring on the second main surface of the flexible resin tape except for a region facing the land of the first main surface, Further, a conductive bump is provided on the land.

【0011】そして、前記半導体チップの電極端子形成
面と反対の面を樹脂封止すると共に、この樹脂封止した
部分と前記ガードリングを、前記可撓性樹脂テープの第
1主面のランドに対向する部位を除き、リブを介して接
続したものが装置の平面性を向上させる上で好ましい。
The surface of the semiconductor chip opposite to the surface on which the electrode terminals are formed is resin-sealed, and the resin-sealed portion and the guard ring are formed on the land of the first main surface of the flexible resin tape. Except for the opposing portions, those connected via ribs are preferable for improving the planarity of the device.

【0012】また、前記半導体チップに放熱手段を設置
し、該放熱手段の端面を封止樹脂より露出させたものも
本発明の特徴である。
Another feature of the present invention is that the semiconductor chip is provided with heat radiating means, and the end surface of the heat radiating means is exposed from the sealing resin.

【0013】すなわち、前記半導体チップの電極端子形
成面と反対の面に接着層を介して放熱手段が接合され、
かつ、該放熱手段の半導体チップと接合された面と反対
の面と同一面になるように前記可撓性樹脂テープの第2
主面側が樹脂封止され、前記放熱手段表面が封止樹脂面
から露出しているものや、前記半導体チップの電極端子
形成面に接着層を介して放熱手段が接合され、かつ、該
放熱手段の半導体チップと接合された面と反対の面が前
記可撓性樹脂テープの配線リード形成面より突出し、突
出し量が前記配線リード形成面より大きく前記導電性バ
ンプ先端より少ない露出高さであるものが考えられる。 (作用)上記のとおりの発明では、テープキャリアに半
導体チップを実装したいわゆるTCP構造において、少
なくとも半導体チップの電極端子形成面を樹脂封止する
とともに、可撓性樹脂テープの第2主面(配線リード及
びランドの形成面と反対の面)の外側端部にガードリン
グを配置することにより、可撓性樹脂テープの平面性が
向上し、ランド上に形成したバンプのコプラナリティが
均一化することに伴い、回路基板への実装歩留りが向上
する。
That is, heat dissipation means is joined to the surface of the semiconductor chip opposite to the surface on which the electrode terminals are formed, with an adhesive layer interposed therebetween.
In addition, the second portion of the flexible resin tape is formed so as to be flush with the surface of the heat dissipation means opposite to the surface bonded to the semiconductor chip.
The main surface side is resin-sealed and the surface of the heat dissipation means is exposed from the sealing resin surface, or the heat dissipation means is joined to the electrode terminal formation surface of the semiconductor chip via an adhesive layer, and the heat dissipation means Of the flexible resin tape, the surface opposite to the surface joined to the semiconductor chip is projected from the wiring lead forming surface, and the protruding amount is larger than the wiring lead forming surface and smaller than the conductive bump tip exposed height. Can be considered. (Operation) In the invention as described above, in the so-called TCP structure in which the semiconductor chip is mounted on the tape carrier, at least the electrode terminal forming surface of the semiconductor chip is resin-sealed, and the second main surface (wiring) of the flexible resin tape is formed. By arranging a guard ring at the outer end of the surface opposite to the surface where leads and lands are formed, the flatness of the flexible resin tape is improved and the coplanarity of bumps formed on the lands is made uniform. Accordingly, the mounting yield on the circuit board is improved.

【0014】そして、第2主面に形成するガードリング
は第1主面のランドに対向する範囲を除いて配置される
ことで、ランドとバンプおよびバンプと回路基板との接
続状態を可撓性樹脂テープの第2主面側からの透過光を
使い、目視により接続外観検査が可能となる。
The guard ring formed on the second main surface is arranged outside the area facing the land on the first main surface, so that the connection state between the land and the bump and the bump and the circuit board is flexible. Using the transmitted light from the second main surface side of the resin tape, it is possible to visually inspect the connection appearance.

【0015】加えて、半導体チップに放熱板を直接接合
し、放熱板の端面を封止樹脂より露出させた構造を採る
ことにより、半導体チップより発生した熱を極めて効率
良く装置外へ放熱させることが可能となる。
In addition, the heat radiation plate is directly joined to the semiconductor chip and the end surface of the heat radiation plate is exposed from the sealing resin, so that the heat generated from the semiconductor chip can be radiated to the outside of the apparatus very efficiently. Is possible.

【0016】[0016]

【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0017】(第1の実施形態)図1は本発明に係る半
導体装置の第1の実施形態を説明するための図であり、
(a)は平面図、(b)は(a)に示した半導体装置の
断面図である。
(First Embodiment) FIG. 1 is a diagram for explaining a first embodiment of a semiconductor device according to the present invention.
3A is a plan view, and FIG. 1B is a cross-sectional view of the semiconductor device shown in FIG.

【0018】本形態の半導体装置は、図1に示すよう
に、中央部にデバイスホール2aが開孔された、ポリイ
ミドフィルム等からなる可撓性樹脂テープ2の表面に銅
箔を接着し、デバイスホール2a内に突出するようにパ
ターニングされた配線リード3を持つテープキャリアが
パッケージ基板として用いられている。
In the semiconductor device of this embodiment, as shown in FIG. 1, a copper foil is adhered to the surface of a flexible resin tape 2 made of a polyimide film or the like, which has a device hole 2a formed in the center thereof, to bond the device. A tape carrier having a wiring lead 3 which is patterned so as to project into the hole 2a is used as a package substrate.

【0019】配線リード3のデバイスホール2の内への
突出部はインナーリード3aとなされており、また配線
リード3はインナーリード3aの反対側の端部またはそ
の途中において他の部分より幅広にされたランド3bを
有している。さらに、ランド3b上には導電性バンプ5
が形成されている。
The projecting portion of the wiring lead 3 into the device hole 2 is formed as an inner lead 3a, and the wiring lead 3 is made wider than other portions at the opposite end of the inner lead 3a or in the middle thereof. It has a land 3b. Further, the conductive bumps 5 are formed on the land 3b.
Are formed.

【0020】インナーリード3aには半導体チップ1の
バンプ電極1aがボンディングされている。半導体チッ
プ1のバンプ電極1aの形成面と反対側の面には放熱板
6が接着剤7により固定されている。
The bump electrodes 1a of the semiconductor chip 1 are bonded to the inner leads 3a. A heat dissipation plate 6 is fixed by an adhesive 7 to the surface of the semiconductor chip 1 opposite to the surface on which the bump electrodes 1a are formed.

【0021】半導体チップ1および放熱板6はモールド
樹脂である封止樹脂4により、放熱板6の半導体チップ
1と接着されている面と反対側の面を除き、被覆されて
いる。さらに、封止樹脂4はデバイスホール2a内を埋
めると共に、可撓性樹脂テープ2の配線リード3の形成
されていない面をその四辺端部近傍まで放熱板6の前記
露出面8を除き均一な厚さで被覆している。このとき、
図1に示すように放熱板6の側面を封止樹脂4で覆い、
樹脂面と放熱板6の表面は略同一の高さとすることで、
放熱板6と樹脂の間に不用意に力が入らず、亀裂が生じ
て外れる等の不良が生じにくい。
The semiconductor chip 1 and the heat radiating plate 6 are covered with a sealing resin 4 which is a molding resin, except for the surface of the heat radiating plate 6 opposite to the surface bonded to the semiconductor chip 1. Further, the sealing resin 4 fills the inside of the device hole 2a, and the surface of the flexible resin tape 2 on which the wiring leads 3 are not formed is uniform to the vicinity of the four side edges except the exposed surface 8 of the heat dissipation plate 6. It is coated with a thickness. At this time,
As shown in FIG. 1, the side surface of the heat sink 6 is covered with the sealing resin 4,
By making the resin surface and the surface of the heat dissipation plate 6 approximately at the same height,
No force is inadvertently applied between the heat sink 6 and the resin, and it is difficult for defects such as cracks to come off to occur.

【0022】本形態の半導体装置では、上述した封止樹
脂の強度により剛性が与えられており、補強材等の別部
品を配置することなく、単純な構造でテープキャリアの
変形防止が可能となる。
In the semiconductor device of this embodiment, rigidity is imparted by the strength of the above-mentioned sealing resin, and it is possible to prevent deformation of the tape carrier with a simple structure without disposing another component such as a reinforcing material. .

【0023】また、放熱板6が半導体チップ1と接着さ
れると共に、半導体チップ1と接着されていない反対側
の面が封止樹脂より露出した露出面8となっているた
め、半導体チップ1の動作により発生した熱を極めて効
率的に放熱することが可能である。
Further, since the heat dissipation plate 6 is adhered to the semiconductor chip 1 and the opposite surface which is not adhered to the semiconductor chip 1 is the exposed surface 8 exposed from the sealing resin, the semiconductor chip 1 is not exposed. It is possible to radiate the heat generated by the operation extremely efficiently.

【0024】(第2の実施形態)図2は本発明に係る半
導体装置の第2の実施形態を説明するための図である。
図2では図1に示した第1の実施形態と同一の構成要素
に同一符号が付してあり、ここでは第1の実施形態と重
複する説明は省略することとする。
(Second Embodiment) FIG. 2 is a diagram for explaining a second embodiment of the semiconductor device according to the present invention.
In FIG. 2, the same components as those of the first embodiment shown in FIG. 1 are designated by the same reference numerals, and the duplicated description of the first embodiment will be omitted.

【0025】本形態の半導体装置は、図2に示すよう
に、第1の実施形態と同様のテープキャリアがパッケー
ジ基板として用いられている。そして、第1の実施形態
と同様に配線リード3のインナーリードとバンプ電極1
aを介して接続された半導体チップ1がデバイスホール
に配置されている。
In the semiconductor device of this embodiment, as shown in FIG. 2, the same tape carrier as that of the first embodiment is used as a package substrate. Then, similarly to the first embodiment, the inner leads of the wiring leads 3 and the bump electrodes 1 are formed.
The semiconductor chip 1 connected via a is arranged in the device hole.

【0026】半導体チップ1のパンプ電極1aが形成さ
れている面には、その電極を除いて接着層9が形成さ
れ、この接着層9により放熱板10が装着されている。
On the surface of the semiconductor chip 1 on which the pump electrode 1a is formed, an adhesive layer 9 is formed except for the electrode, and the heat dissipation plate 10 is attached by this adhesive layer 9.

【0027】半導体チップ1および放熱板10はモール
ド樹脂である封止樹脂4により、放熱板10の半導体チ
ップ1と接着されている面と反対側の面を除き、被覆さ
れている。そして、放熱板10の接着層9と接着した面
と反対側の面は封止樹脂4の表面から突出させ、その突
出寸法は配線リード3の面より大きく、かつ導電性バン
プ5の先端より低い露出高さを有している。さらに、封
止樹脂4は放熱板10を囲むようにデバイスホール内を
埋めると共に、可撓性樹脂テープ2の配線リード3の形
成されていない面をその四辺端部近傍まで均一な厚さで
被覆している。
The semiconductor chip 1 and the heat radiating plate 10 are covered with a sealing resin 4 which is a mold resin except for the surface of the heat radiating plate 10 opposite to the surface bonded to the semiconductor chip 1. The surface of the heat dissipation plate 10 opposite to the surface bonded to the adhesive layer 9 is projected from the surface of the sealing resin 4, and the projecting dimension is larger than the surface of the wiring lead 3 and lower than the tip of the conductive bump 5. Has an exposed height. Further, the sealing resin 4 fills the inside of the device hole so as to surround the heat sink 10, and covers the surface of the flexible resin tape 2 on which the wiring leads 3 are not formed with a uniform thickness up to the vicinity of the four side edges. doing.

【0028】ここで接着層9の材質は絶縁性を有してい
るとともに極めて不純的濃度が低いことは言うまでもな
く、半導体素子の高性能化を達成する上で重要な要素の
一つであり、半導体チップの動作によりデンドライトの
発生がない材質を選択することが重要である。
It is needless to say that the material of the adhesive layer 9 has an insulating property and has an extremely low impurity concentration, which is one of the important factors for achieving high performance of the semiconductor element. It is important to select a material that does not generate dendrites due to the operation of the semiconductor chip.

【0029】また、本形態の半導体装置を回路基板に実
装した場合は、バンプ5の変形により放熱板10が回路
基板と接触し、その部分を通じてさらに効率良く半導体
チップを放熱させることが可能である。
Further, when the semiconductor device of this embodiment is mounted on a circuit board, the heat dissipation plate 10 comes into contact with the circuit board due to the deformation of the bumps 5, and the semiconductor chip can be more efficiently radiated through the portion. .

【0030】(第3の実施形態)図3は本発明に係る半
導体装置の第3の実施形態を説明するための図であり、
(a)は平面図、(b)は(a)に示した半導体装置の
断面図である。この図でも図1に示した第1の実施形態
と同一の構成要素に同一符号が付してあり、ここでは第
1の実施形態と重複する説明は省略することとする。
(Third Embodiment) FIG. 3 is a view for explaining a third embodiment of the semiconductor device according to the present invention.
3A is a plan view, and FIG. 1B is a cross-sectional view of the semiconductor device shown in FIG. Also in this figure, the same components as those of the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and the description overlapping with the first embodiment will be omitted here.

【0031】本形態の半導体装置は、図3に示すよう
に、デバイスホール2aおよび半導体チップ1の外周を
封止樹脂4により覆うと共に可撓性樹脂テープ2の変形
を防止するためガードリング11を設置したものであ
る。ガードリング11は可撓性樹脂テープ2の配線リー
ド3やランド3bを形成した第1主面と反対側の第2主
面の領域を除く範囲に設置されている。すなわち、可撓
性樹脂テープ2の第2主面の外周端部にガードリング1
1が設置されている。
In the semiconductor device of the present embodiment, as shown in FIG. 3, the device hole 2a and the outer periphery of the semiconductor chip 1 are covered with the sealing resin 4, and the guard ring 11 is provided to prevent the flexible resin tape 2 from being deformed. It was installed. The guard ring 11 is installed in a range excluding the area of the second main surface opposite to the first main surface on which the wiring leads 3 and the lands 3b of the flexible resin tape 2 are formed. That is, the guard ring 1 is attached to the outer peripheral edge of the second main surface of the flexible resin tape 2.
1 is installed.

【0032】この様に、ガードリング11を設置して可
撓性樹脂テープ2を補強すると共に、ランド3bをガー
ドリング11により遮光しないため、ランド3bとバン
プ5およびバンプ5と回路基板(図示せず)との接続状
態を可撓性樹脂テープ2の第2主面側からの透過光(例
えばポリイミドテープを適用する場合など光の透過性を
利用する)を使い、目視により接続外観検査が可能とな
る。
As described above, since the guard ring 11 is installed to reinforce the flexible resin tape 2 and the land 3b is not shielded by the guard ring 11, the land 3b, the bump 5, the bump 5 and the circuit board (not shown). The connection appearance can be visually inspected by using the transmitted light from the second main surface side of the flexible resin tape 2 (for example, when the polyimide tape is used, the light transmittance is used). Becomes

【0033】(第4の実施形態)図4は本発明に係る半
導体装置の第4の実施形態を示す平面図である。この図
でも図1に示した第1の実施形態と同一の構成要素に同
一符号が付してあり、ここでは第1の実施形態と重複す
る説明は省略することとする。
(Fourth Embodiment) FIG. 4 is a plan view showing a fourth embodiment of the semiconductor device according to the present invention. Also in this figure, the same components as those of the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and the description overlapping with the first embodiment will be omitted here.

【0034】本形態の半導体装置は、図4に示すよう
に、第3の実施形態のガードリング11の構造に加え、
可撓性樹脂テープ2の第2主面側にてガードリング12
と封止樹脂4の部分をリブ12を介し接続することによ
り更に可撓性樹脂テープ2の変形が防止され回路基板へ
の実装性が向上する。また、リブ12は第3の実施形態
と同様に目視による接続外観検査を可能にするため、可
撓性樹脂テープ2の第1主面のランドに対向する部位を
除いて配設されている。
In addition to the structure of the guard ring 11 of the third embodiment, the semiconductor device of the present embodiment, as shown in FIG.
The guard ring 12 is provided on the second main surface side of the flexible resin tape 2.
The flexible resin tape 2 is further prevented from being deformed by connecting the portion of the sealing resin 4 with the sealing resin 4 via the rib 12, and the mountability on the circuit board is improved. Further, the ribs 12 are provided except for the portion facing the land on the first main surface of the flexible resin tape 2 in order to enable visual inspection of the connection as in the third embodiment.

【0035】また、上述の第3および第4の実施形態に
おいて、第1および第2の実施形態に示すように放熱板
を半導体チップと接着した面と反対側の面をパッケージ
表面に露出するように設置し、電気的および熱的特性を
向上させることも十分可能である。
In the third and fourth embodiments described above, as shown in the first and second embodiments, the surface opposite to the surface where the heat sink is bonded to the semiconductor chip is exposed on the package surface. It is fully possible to install it on the ground and improve the electrical and thermal characteristics.

【0036】[0036]

【発明の効果】本発明は以上説明したように構成される
ので、以下に記載する効果を奏する。
Since the present invention is configured as described above, the following effects can be obtained.

【0037】請求項1に記載の発明は、中央にデバイス
ホールを持つ可撓性樹脂テープの第1主面に、一端が前
記デバイスホール内に突出するインナーリードとされ他
端がランドを持つように配線リードを形成したテープキ
ャリアと、前記インナーリードに接続された電極端子を
有する半導体チップとを含み、少なくとも前記半導体チ
ップの電極端子形成面を樹脂封止するとともに、前記可
撓性樹脂テープの第2主面に第1主面のランドに対向す
る範囲を除きガードリングを形成し、さらに前記ランド
上に導電性バンプを備えた半導体装置であるので、前記
樹脂テープ面の平面性が向上し、バンプのコプラナリテ
ィが均一化することに伴い、プリント回路基板への実装
歩留りが向上する等の効果が得られる。また、ガードリ
ングは第1主面のランドに対向する範囲を除いて形成さ
れているので、ランドとバンプおよびバンプと回路基板
との接続状態を可撓性樹脂テープの第2主面側からの透
過光を使い、目視により接続外観検査が可能となる。
According to a first aspect of the present invention, one end of the flexible resin tape having a device hole in the center is an inner lead protruding into the device hole and the other end has a land on the first main surface. A tape carrier having a wiring lead formed thereon and a semiconductor chip having an electrode terminal connected to the inner lead, and at least the electrode terminal forming surface of the semiconductor chip is resin-sealed, and the flexible resin tape Since the second main surface is a semiconductor device in which a guard ring is formed except for a region facing the land of the first main surface and further conductive bumps are provided on the land, the flatness of the resin tape surface is improved. As the coplanarity of the bumps becomes uniform, the yield of mounting on the printed circuit board can be improved. Further, since the guard ring is formed excluding the area facing the land on the first main surface, the connection state between the land and the bump and between the bump and the circuit board is controlled from the second main surface side of the flexible resin tape. It is possible to visually inspect the connection using transmitted light.

【0038】請求項2に記載の発明は、前記半導体チッ
プの電極端子形成面と反対の面を樹脂封止すると共に、
この樹脂封止した部分と前記ガードリングを、前記可撓
性樹脂テープの第1主面のランドに対向する部位を除
き、リブを介して接続したことにより、可撓性樹脂テー
プの変形がさらに防止され回路基板への実装性が向上す
る。
According to a second aspect of the present invention, the surface of the semiconductor chip opposite to the surface on which the electrode terminals are formed is resin-sealed, and
The flexible resin tape is further deformed by connecting the resin-sealed portion and the guard ring via a rib except for a portion facing the land on the first main surface of the flexible resin tape. It is prevented and the mountability on the circuit board is improved.

【0039】請求項3に記載の発明は、請求項1又は2
に記載の発明に加え、前記半導体チップに放熱手段を設
置し、該放熱手段の端面を封止樹脂より露出させたこと
により、半導体チップで発生した熱を極めて効率的に半
導体パッケージ外へ放熱させることができ、高速動作の
安定が可能となる。また、放熱板の一部は半導体装置内
に封止樹脂より内包された構造となるため、放熱効果を
高めながら半導体装置の小型化が同時に達成されるとい
う利点も有している。
The invention according to claim 3 is the invention according to claim 1 or 2.
In addition to the invention described in 1, the heat dissipation means is installed in the semiconductor chip, and the end surface of the heat dissipation means is exposed from the sealing resin, so that the heat generated in the semiconductor chip is radiated to the outside of the semiconductor package very efficiently. It is possible to stabilize the high speed operation. Further, since a part of the heat dissipation plate has a structure in which the semiconductor device is encapsulated by a sealing resin, there is an advantage that the semiconductor device can be miniaturized at the same time while enhancing the heat dissipation effect.

【0040】請求項4に記載の発明は、請求項1又は2
に記載の発明に加え、前記半導体チップの電極端子形成
面と反対の面に接着層を介して放熱手段が接合され、か
つ、該放熱手段の半導体チップと接合された面と反対の
面と同一面になるように前記可撓性樹脂テープの第2主
面側が樹脂封止され、前記放熱手段表面が封止樹脂面か
ら露出していることにより、放熱板と樹脂の間に不用意
に力が入らず、亀裂が生じて外れる等の不良が生じにく
い。また、封止樹脂の強度により剛性が与えられてお
り、補強材等の別部品を配置することなく、単純な構造
でテープキャリアの変形防止が可能となる。
The invention described in claim 4 is the first or second invention.
In addition to the invention described in, the heat dissipation means is joined to the surface of the semiconductor chip opposite to the electrode terminal formation surface via an adhesive layer, and is the same as the surface opposite to the surface of the heat dissipation means joined to the semiconductor chip. The second main surface side of the flexible resin tape is resin-sealed so that the surface becomes a surface, and the surface of the heat dissipation means is exposed from the sealing resin surface, so that a force is inadvertently applied between the heat dissipation plate and the resin. Does not enter, and it is difficult for defects such as cracks to come off. In addition, the strength of the sealing resin provides rigidity, so that it is possible to prevent deformation of the tape carrier with a simple structure without disposing another component such as a reinforcing material.

【0041】請求項5に記載の発明は、請求項1又は2
に記載の発明に加え、前記半導体チップの電極端子形成
面に接着層を介して放熱手段が接合され、かつ、該放熱
手段の半導体チップと接合された面と反対の面が前記可
撓性樹脂テープの配線リード形成面より突出し、突出し
量が前記配線リード形成面より大きく前記導電性バンプ
先端より少ない露出高さであるので、半導体装置を基板
実装した場合、バンプの変形に伴い放熱板が実装基板に
接触し、その部分を通しさらに効率よく実装基板への放
熱が可能となる。
The invention according to claim 5 is the invention according to claim 1 or 2.
In addition to the invention described in, the heat dissipation means is joined to the electrode terminal formation surface of the semiconductor chip via an adhesive layer, and the surface opposite to the surface of the heat dissipation means joined to the semiconductor chip is the flexible resin. When the semiconductor device is mounted on a substrate, the heat sink is mounted along with the deformation of the bumps, because the protruding height of the tape is larger than that of the wiring lead formation surface and smaller than that of the conductive bump tip. It is possible to make more efficient heat dissipation to the mounting board by contacting the board and passing through that part.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る半導体装置の第1の実施形態を説
明するための図であり、(a)は平面図、(b)は
(a)に示した半導体装置の断面図である。
1A and 1B are views for explaining a first embodiment of a semiconductor device according to the present invention, FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view of the semiconductor device shown in FIG.

【図2】本発明に係る半導体装置の第2の実施形態を説
明するための図である。
FIG. 2 is a diagram for explaining a second embodiment of the semiconductor device according to the present invention.

【図3】本発明に係る半導体装置の第3の実施形態を説
明するための図であり、(a)は平面図、(b)は
(a)に示した半導体装置の断面図である。
3A and 3B are views for explaining a third embodiment of a semiconductor device according to the present invention, FIG. 3A is a plan view, and FIG. 3B is a sectional view of the semiconductor device shown in FIG.

【図4】本発明に係る半導体装置の第4の実施形態を示
す平面図である。
FIG. 4 is a plan view showing a fourth embodiment of a semiconductor device according to the present invention.

【符号の説明】[Explanation of symbols]

1 半導体チップ 1a バンプ電極 2 可撓性樹脂テープ 2a デバイスホール 3 配線リード 3a インナーリード 3b ランド 4 封止樹脂 5 バンプ 6 放熱板 7,9 接着層 8 露出面 10 放熱板 11 ガードリング 12 リブ 1 semiconductor chip 1a bump electrode 2 flexible resin tape 2a device hole 3 wiring lead 3a inner lead 3b land 4 sealing resin 5 bump 6 heat sink 7, 9 adhesive layer 8 exposed surface 10 heat sink 11 guard ring 12 rib

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 中央にデバイスホールが開孔された可撓
性樹脂テープと、該可撓性樹脂テープの第1主面に設け
られ、一端が前記デバイスホール内に突出してインナー
リードになされ他端にランドが形成された配線リードと
を有するテープキャリアと、 前記インナーリードに接続された電極端子を有する半導
体チップとを有し、 少なくとも前記半導体チップの電極端子形成面を樹脂封
止するとともに、前記可撓性樹脂テープの第2主面に第
1主面のランドに対向する範囲を除きガードリングを形
成し、さらに前記ランド上に導電性バンプを備えた半導
体装置。
1. A flexible resin tape having a device hole formed in the center, and a flexible resin tape provided on the first main surface of the flexible resin tape, one end of which protrudes into the device hole to serve as an inner lead. A tape carrier having a wiring lead having a land formed on an end, and a semiconductor chip having an electrode terminal connected to the inner lead, and at least an electrode terminal forming surface of the semiconductor chip is resin-sealed, A semiconductor device in which a guard ring is formed on the second main surface of the flexible resin tape except a region facing the land of the first main surface, and a conductive bump is further provided on the land.
【請求項2】 前記半導体チップの電極端子形成面と反
対の面を樹脂封止すると共に、この樹脂封止した部分と
前記ガードリングを、前記可撓性樹脂テープの第1主面
のランドに対向する部位を除き、リブを介して接続した
ことを特徴とする請求項1に記載の半導体装置。
2. The surface of the semiconductor chip opposite to the surface on which the electrode terminals are formed is resin-sealed, and the resin-sealed portion and the guard ring are used as lands on the first main surface of the flexible resin tape. The semiconductor device according to claim 1, wherein the semiconductor device is connected via a rib except for the facing portions.
【請求項3】 前記半導体チップに放熱手段を設置し、
該放熱手段の端面を封止樹脂より露出させたことを特徴
とする請求項1又は2に記載の半導体装置。
3. A heat dissipating means is installed on the semiconductor chip,
3. The semiconductor device according to claim 1, wherein the end surface of the heat dissipation means is exposed from the sealing resin.
【請求項4】 前記半導体チップの電極端子形成面と反
対の面に接着層を介して放熱手段が接合され、かつ、該
放熱手段の半導体チップと接合された面と反対の面と同
一面になるように前記可撓性樹脂テープの第2主面側が
樹脂封止され、前記放熱手段表面が封止樹脂面から露出
していることを特徴とする請求項1又は2に記載の半導
体装置。
4. A heat radiating means is bonded to the surface of the semiconductor chip opposite to the surface on which the electrode terminals are formed through an adhesive layer, and the heat radiating means is on the same surface as the surface opposite to the surface bonded to the semiconductor chip. 3. The semiconductor device according to claim 1, wherein the flexible resin tape is sealed on the second main surface side with a resin so that the surface of the heat radiating means is exposed from the sealing resin surface.
【請求項5】 前記半導体チップの電極端子形成面に接
着層を介して放熱手段が接合され、かつ、該放熱手段の
半導体チップと接合された面と反対の面が前記可撓性樹
脂テープの配線リード形成面より突出し、突出し量が前
記配線リード形成面より大きく前記導電性バンプ先端よ
り少ない露出高さであることを特徴とする請求項1又は
2に記載の半導体装置。
5. A heat radiating means is bonded to an electrode terminal forming surface of the semiconductor chip via an adhesive layer, and a surface of the heat radiating means opposite to a surface bonded to the semiconductor chip is the flexible resin tape. 3. The semiconductor device according to claim 1, wherein the semiconductor device has an exposed height that protrudes from the wiring lead forming surface and is larger than the wiring lead forming surface and smaller than the conductive bump tips.
JP7320505A 1995-12-08 1995-12-08 Semiconductor device Expired - Lifetime JP2685039B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7320505A JP2685039B2 (en) 1995-12-08 1995-12-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7320505A JP2685039B2 (en) 1995-12-08 1995-12-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH09162233A true JPH09162233A (en) 1997-06-20
JP2685039B2 JP2685039B2 (en) 1997-12-03

Family

ID=18122207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7320505A Expired - Lifetime JP2685039B2 (en) 1995-12-08 1995-12-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2685039B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999056313A1 (en) * 1998-04-24 1999-11-04 Hitachi, Ltd. Semiconductor device and process for manufacturing the same
US6645794B2 (en) 2000-10-18 2003-11-11 Hitachi, Ltd. Method of manufacturing a semiconductor device by monolithically forming a sealing resin for sealing a chip and a reinforcing frame by transfer molding

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011023463A (en) 2009-07-14 2011-02-03 Denso Corp Semiconductor module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999056313A1 (en) * 1998-04-24 1999-11-04 Hitachi, Ltd. Semiconductor device and process for manufacturing the same
US6645794B2 (en) 2000-10-18 2003-11-11 Hitachi, Ltd. Method of manufacturing a semiconductor device by monolithically forming a sealing resin for sealing a chip and a reinforcing frame by transfer molding

Also Published As

Publication number Publication date
JP2685039B2 (en) 1997-12-03

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