JPH0915392A - X-ray analyzer - Google Patents

X-ray analyzer

Info

Publication number
JPH0915392A
JPH0915392A JP7161753A JP16175395A JPH0915392A JP H0915392 A JPH0915392 A JP H0915392A JP 7161753 A JP7161753 A JP 7161753A JP 16175395 A JP16175395 A JP 16175395A JP H0915392 A JPH0915392 A JP H0915392A
Authority
JP
Japan
Prior art keywords
ray
width
slit
incident
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7161753A
Other languages
Japanese (ja)
Inventor
Kazuhiro Ueda
和浩 上田
Katsuhisa Usami
勝久 宇佐美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7161753A priority Critical patent/JPH0915392A/en
Publication of JPH0915392A publication Critical patent/JPH0915392A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To detect incident X-ray in an irradiation region equalized for sample surface by changing the slit width of at least one of incidence and emission limiting slits in accordance with the incidence angle or emission angle of X-ray to or from the sample. CONSTITUTION: An incident X-ray width limiting slit 2 limits the width and height of the X-ray from an X-ray source and introduces as incidence light 3 with width T on a sample 5 with an incidence angle (ω) and width (t). Here, T=t/sinω. Emission X-ray 6 reflected and diffracted at the irradiated emission region 4 and generated fluorescence X-ray 11 are limited in width and height with emission limiting slits 7, 9 and individually measured with X-ray detectors 8, 10. If the slit 2 width is varied in accordance with the incidence angle ωat this moment, the dependency on incidence angle in the measuring region is eliminated. Similarly, if the width of slits 7, 9 is varied in accordance with the emission angle, the dependency of emission angle in the measuring region is eliminated. In this manner, the intensity of diffracted, reflected and fluorescent X-ray from an equal sample area can be measured with high accuracy.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、X線解析装置に関する
発明である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray analysis apparatus.

【0002】[0002]

【従来の技術】X線回折は多くの材料の構造解析などに
用いられてきた。このような測定は、(1)試料にX線
を入射し、試料を固定して検出器を動かし、回折・反射
強度と出射角(2θ)の関係を測定する(θスキャ
ン)、(2)試料にX線を入射し、検出器を固定して試
料を動かし、回折・反射強度と入射角(ω)の関係を測
定する(ωスキャン,ロッキングカーブ測定)、(3)
試料にX線を入射し、試料と検出器を同軸で、しかも試
料の傾斜角の2倍だけ検出器を動かし、回折・反射強度
と入射角(ω)の関係を測定する(ω−2θスキャン)
で行われている。
2. Description of the Related Art X-ray diffraction has been used for structural analysis of many materials. Such measurement includes (1) measuring the relationship between the diffraction / reflection intensity and the emission angle (2θ) by injecting X-rays on the sample, fixing the sample and moving the detector (θ scan), (2). X-ray is incident on the sample, the detector is fixed and the sample is moved, and the relationship between the diffraction / reflection intensity and the incident angle (ω) is measured (ω scan, rocking curve measurement), (3)
X-rays are incident on the sample, the sample and the detector are coaxial, and the detector is moved by twice the sample tilt angle, and the relationship between the diffraction / reflection intensity and the incident angle (ω) is measured (ω-2θ scan). )
It is done in.

【0003】また近年、周期性のある薄膜多層膜からの
回折の周期性,回折近傍の散漫散乱強度から多層膜の構
造を解析する方法や、全反射されたX線の干渉パターン
から多層薄膜の膜厚や密度を求める手法が開示されてい
る。これらはX線を試料表面すれすれに入射して、低角
度の回折X線や反射X線強度を測定して、非破壊で試料
表面近傍の構造や構成元素,薄膜多層膜の膜構造を解析
する手法である。またX線を試料表面すれすれに入射し
て、X線の侵入深さの入射角依存性を用いて、そこから
発生した蛍光X線を測定して試料表面近傍の構成元素や
膜構造を測定する手法など、試料面とすれすれに入射し
たX線を用いた研究が盛んに行われている。
In recent years, a method of analyzing the structure of a multilayer film from the periodicity of diffraction from a periodic thin film multilayer film and the diffuse scattering intensity in the vicinity of diffraction, and from the interference pattern of totally reflected X-rays A method for obtaining the film thickness and the density is disclosed. These incident X-rays on the surface of the sample and measure the intensity of low-angle diffracted X-rays and reflected X-rays, and nondestructively analyze the structure and constituent elements near the sample surface and the film structure of the thin film multilayer film. It is a technique. In addition, X-rays are made to grazing the surface of the sample, the fluorescent X-rays generated therefrom are measured by using the incident angle dependence of the penetration depth of the X-rays, and the constituent elements and film structure near the sample surface are measured. Research using techniques such as X-rays that are grazingly incident on the sample surface is being actively conducted.

【0004】X線強度を入射角、または出射角と連動し
て測定する際に、入射角、または出射角を変化させると
入射X線の照射領域が、または検出されるX線の出射面
積が変化する。従来の入射角,出射角とも10゜以上の
回折X線の強度測定では入射X線の照射領域や、X線の
出射面積はほとんど変化しない。
When the X-ray intensity is measured in conjunction with the incident angle or the emission angle, if the incident angle or the emission angle is changed, the incident X-ray irradiation area or the detected X-ray emission area becomes smaller. Change. In the conventional measurement of the intensity of diffracted X-rays having an incident angle and an outgoing angle of 10 ° or more, the incident X-ray irradiation area and the X-ray outgoing area hardly change.

【0005】[0005]

【発明が解決しようとする課題】しかし、試料にすれす
れに入射したX線の回折X線,反射X線、または蛍光X
線を入射角、または出射角と連動して測定する際に、入
射角または出射角を変化させると入射X線の試料表面で
の照射領域または、検出されたX線の出射面積が大きく
変化する。入射X線の照射領域や検出されるX線の出射
面積が変化すると測定領域が変化する。このことは試料
が湾曲している場合や、面内の構造が不均一な場合、試
料が小さい場合には、測定結果がその影響を受けるた
め、高精度な測定ができない。そこで、本発明はX線の
試料への入射角、または出射角を変化させても、入射X
線の照射領域が試料表面で一定になる様に、または一定
の試料面積から出射した様にX線が検出できるようなX
線解析装置を提供することにある。
However, the diffracted X-rays, the reflected X-rays, or the fluorescent X-rays of the X-rays that have just been incident on the sample.
When measuring an X-ray in conjunction with an incident angle or an emission angle, if the incident angle or the emission angle is changed, the irradiation area of the incident X-ray on the sample surface or the emission area of the detected X-ray greatly changes. . When the irradiation area of incident X-rays or the emission area of detected X-rays changes, the measurement area changes. This means that if the sample is curved, the in-plane structure is non-uniform, or the sample is small, the measurement result is affected, and high-precision measurement cannot be performed. Therefore, according to the present invention, even if the incident angle of the X-ray to the sample or the emission angle is changed, the incident X-ray is changed.
X-ray that can detect X-rays so that the irradiation area of the rays is constant on the sample surface or emitted from a constant sample area
It is to provide a line analysis device.

【0006】[0006]

【課題を解決するための手段】X線源と入射X線制限ス
リットと試料台と出射X線制限スリットとX線検出器と
を備えたX線解析装置において、試料に入射したX線の
回折X線,反射X線、または蛍光X線を入射角、または
出射角と連動して測定する際に、入射X線の照射領域が
試料表面で一定にするために、または一定の試料面積か
ら出射した様にX線を検出するために、入射または出射
制限スリットのうち少なくとも1つのスリットの幅が試
料への入射角あるいは出射角に連動して変化する入射X
線または出射X線の幅を可変できるスリットを有するこ
とを特徴とするX線解析装置。
In an X-ray analysis apparatus including an X-ray source, an incident X-ray limiting slit, a sample stage, an outgoing X-ray limiting slit, and an X-ray detector, diffraction of X-rays incident on a sample is performed. When measuring X-rays, reflected X-rays, or fluorescent X-rays in conjunction with the incident angle or the emission angle, the irradiation area of the incident X-rays is kept constant on the sample surface, or is emitted from a fixed sample area. As described above, in order to detect X-rays, the width of at least one of the entrance or exit limiting slits changes in association with the incident angle or the exit angle to the sample.
An X-ray analysis apparatus having a slit capable of varying the width of an X-ray or an emitted X-ray.

【0007】また、前記入射X線または出射X線幅可変
スリットは、一対の円筒の曲面側を対面に配置し、その
間でX線幅を制限することを特徴とするX線の幅を可変
できるスリット。
The incident X-ray or outgoing X-ray width variable slit is characterized in that the curved surface sides of a pair of cylinders are arranged to face each other and the X-ray width is limited between them. slit.

【0008】また、前記入射X線または出射X線幅可変
スリットは、試料へのX線の入射角、またはX線の試料
からの出射角に連動して、スリット全体を回転させるこ
とでX線の幅を変化させ、X線の照射領域が試料表面で
一定になるよう、また一定の試料表面から出射したX線
が検出器に入るようにスリット幅を変化させることを特
徴とするX線の幅を可変できるスリット。
Further, the incident X-ray or outgoing X-ray width variable slit is rotated by the entire slit in association with the incident angle of the X-ray to the sample or the outgoing angle of the X-ray from the sample. Of the X-ray so that the X-ray irradiation area becomes constant on the sample surface and the X-ray emitted from the constant sample surface enters the detector. Slit with variable width.

【0009】さらに、前記入射X線または出射X線幅可
変スリットは、一対のスリットブレードを対面に配置
し、その間でX線幅を制限することを特徴とするX線の
幅を可変できるスリット。
Further, the incident X-ray or outgoing X-ray width variable slit is a slit capable of varying the X-ray width, characterized in that a pair of slit blades are arranged facing each other and the X-ray width is limited between them.

【0010】また、前記入射X線または出射X線幅可変
スリットは、試料へのX線の入射角、またはX線の試料
からの出射角に連動して、スリットブレードの一方また
は、両方を動かすことによりX線の幅を変化させ、X線
の照射領域が試料表面で一定になるように、または一定
の試料表面から出射したX線が検出器に入るようにスリ
ット幅を変化させることを特徴とするX線の幅を可変で
きるスリット。
The incident X-ray or outgoing X-ray width variable slit moves one or both of the slit blades in association with the incident angle of the X-ray to the sample or the outgoing angle of the X-ray from the sample. By changing the width of the X-ray, the slit width is changed so that the irradiation area of the X-ray becomes constant on the sample surface or the X-ray emitted from the constant sample surface enters the detector. A slit that can change the width of X-rays.

【0011】さらに、前記X線解析装置は入射X線また
は出射X線幅可変スリットのスリット幅の変化による入
射X線または、出射X線の強度変化は、入射X線強度の
入射角依存性または、出射X線強度の出射角依存性を事
前に測定し、強度を測定結果で規格化することを特徴と
するX線解析装置に関する。
Further, in the X-ray analysis apparatus, the intensity change of the incident X-ray or the output X-ray due to the change of the slit width of the incident X-ray or the output X-ray width variable slit depends on the incident angle dependence of the incident X-ray intensity. The present invention relates to an X-ray analysis apparatus, characterized in that the output angle dependence of the output X-ray intensity is measured in advance and the intensity is standardized by the measurement result.

【0012】[0012]

【作用】試料に入射したX線の試料表面での幅Tは、入
射X線の幅をt1 ,試料表面からの入射角をωとすると
式(1)の様に表せる。
The width T of the X-ray incident on the sample on the sample surface can be expressed by the equation (1), where t 1 is the width of the incident X-ray and ω is the incident angle from the sample surface.

【0013】 T=t1/sin(ω) …(1) 試料表面でのX線の幅Tを一定にするために必要な入射
X線の幅tは式(2)のように表せる。
T = t 1 / sin (ω) (1) The width t of the incident X-ray required to keep the width T of the X-ray on the sample surface constant can be expressed as in equation (2).

【0014】 t1=Tsin(ω) …(2) 式(2)に従って入射角に連動して入射X線制限スリッ
トの幅を変化させることにより、入射X線の照射領域が
試料表面で一定になる様にすることが可能になる。
T 1 = Tsin (ω) (2) By changing the width of the incident X-ray limiting slit in accordance with the incident angle according to the equation (2), the irradiation area of the incident X-ray is made constant on the sample surface. It becomes possible to become.

【0015】逆に、出射X線の幅t2 は、試料に入射し
たX線の試料表面での幅T,試料表面からの出射角を2
θとすると式(3)の様に表せる。
On the other hand, the width t 2 of the emitted X-ray is the width T of the X-ray incident on the sample on the sample surface, and the emission angle from the sample surface is 2.
If it is set to θ, it can be expressed as in Expression (3).

【0016】 t2=Tsin(2θ) …(3) 式(3)に従って出射角に連動して出射X線制限スリッ
トの幅を変化させることにより、一定の試料面積から出
射した様にX線が検出できるようにすることが可能にな
る。
T 2 = Tsin (2θ) (3) By changing the width of the emission X-ray limiting slit in accordance with the emission angle according to the equation (3), X-rays are emitted as if they were emitted from a fixed sample area. It becomes possible to detect.

【0017】また、入射X線または出射X線の幅を可変
できるスリットは、一対の円筒の曲面側を対面に配置
し、その間でX線幅を制限することを特徴とする入射X
線幅可変スリットで、試料へのX線の入射角に連動し
て、スリット全体が回転することでスリットの幅を変化
させ、入射X線の照射領域が試料表面で一定になる様
に、または一定の試料面積から出射した様にX線が検出
できるようにすることが可能になる。
Further, the slit having variable widths of the incident X-rays or the outgoing X-rays is characterized in that the curved surface sides of a pair of cylinders are arranged to face each other and the X-ray width is limited between them.
In the variable line width slit, the width of the slit is changed by rotating the entire slit in conjunction with the incident angle of the X-ray to the sample, so that the incident X-ray irradiation area becomes constant on the sample surface, or It becomes possible to detect X-rays as if they were emitted from a fixed sample area.

【0018】また、入射X線または出射X線の幅を可変
できるスリットは、一対のスリットブレードを対面に配
置し、その間でX線幅を制限するスリットにおいて、試
料へのX線の入射角に連動して、スリットブレードの一
方または、両方を動かすことによりスリットの幅を変化
させ、入射X線の照射領域が試料表面で一定になる様
に、または一定の試料面積から出射した様にX線が検出
できるようにすることが可能になる。
Further, in the slit in which the width of the incident X-rays or the emitted X-rays can be varied, a pair of slit blades are arranged facing each other, and in the slits for limiting the X-ray width between them, the incident angle of the X-rays to the sample is set. In conjunction with this, the slit width is changed by moving one or both of the slit blades so that the incident X-ray irradiation area is constant on the sample surface or the X-ray is emitted from a constant sample area. Can be detected.

【0019】また、入射X線または出射X線の幅を可変
できるスリットのスリット幅の変化による入射X線また
は、出射X線の強度変化は、入射X線強渡の入射角依存
性または、出射X線強度の出射角依存性を事前に測定
し、強度を測定結果で補正することが可能になる。
Further, the intensity change of the incident X-ray or the emitted X-ray due to the change of the slit width of the slit whose width of the incident X-ray or the emitted X-ray can be varied depends on the incident angle dependence of the incident X-ray or the emitted X-ray. It is possible to measure the exit angle dependence of the line intensity in advance and correct the intensity with the measurement result.

【0020】さらにX線反射率を測定する場合、全反射
角度領域でのスリット幅が小さいため、全反射角度領域
で検出されるX線強度が小さくなり、見かけ上のX線検
出器のダイナミックレンジを広くすることが可能にな
る。
Further, when measuring the X-ray reflectance, since the slit width in the total reflection angle region is small, the X-ray intensity detected in the total reflection angle region is small, and the apparent dynamic range of the X-ray detector is small. Can be widened.

【0021】[0021]

【実施例】以下、本発明の実施例を図面を用いて説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

【0022】図1は本発明の実施例の概念構成図であ
る。X線源1で発生したX線は入射X線幅制限スリット
2で幅と高さを制限され入射X線3になる。この入射X
線3を入射角ωで試料5に入射する。試料表面では入射
X線の幅Tは入射X線の幅をtとするとT=t/sin
(ω)となる。入射X線が照射されている出射領域4で
反射または回折した出射X線6は出射X線幅制限スリッ
ト7で角度広がりを制限しX線検出器8で計測する。ま
た出射領域4で発生した蛍光X線11も、出射X線幅制
限スリット9で角度広がりを制限しエネルギー分散型X
線検出器10で強度とエネルギーを測定する。このとき
t=50μm,ω=0.2゜ のとき、Tは15mm程度に
まで広がり、ω=2.0゜になると、T=0.6mmにまで
減少する。このTの変化がなくなるように、入射X線幅
制限スリット2の幅を入射角ω従ってt=Tsin(ω)で
変化させることで、計測領域の入射角依存性がなくなっ
た。
FIG. 1 is a conceptual block diagram of an embodiment of the present invention. The X-rays generated by the X-ray source 1 are incident X-rays 3 whose width and height are limited by the incident X-ray width limiting slit 2. This incident X
The line 3 is made incident on the sample 5 at an incident angle ω. On the sample surface, the width T of the incident X-ray is T = t / sin, where t is the width of the incident X-ray.
(ω). The outgoing X-ray 6 reflected or diffracted in the outgoing region 4 irradiated with the incoming X-ray is limited in angular spread by the outgoing X-ray width limiting slit 7 and measured by the X-ray detector 8. Further, the fluorescent X-rays 11 generated in the emission region 4 are also limited in angular spread by the emission X-ray width limiting slit 9 and are energy dispersive X-rays.
The line detector 10 measures intensity and energy. At this time, when t = 50 μm and ω = 0.2 °, T spreads to about 15 mm, and when ω = 2.0 °, T decreases to T = 0.6 mm. By changing the width of the incident X-ray width limiting slit 2 at the incident angle ω and therefore t = Tsin (ω) so that the change of T is eliminated, the incident angle dependency of the measurement region is eliminated.

【0023】また、この入射X線3を入射角ωで試料5
に入射し、試料表面で反射または回折した出射X線6や
蛍光X線11を出射角2θの位置で計測する場合の出射
X線6や蛍光X線11は出射X線幅制限スリット7で高
さと幅を制限され検出器に入る。出射X線幅制限スリッ
ト7、または蛍光X線幅制限スリットの幅をt,出射X
線または蛍光X線の取出し角を2θとすると、X線検出
器8またはエネルギー分散型X線検出器10で検出され
る出射X線6や蛍光X線11は、幅T=t/sin(2θ)
の試料表面領域4から出射したX線だけになる。このと
きt=50μm,2θ=0.2゜のとき、Tは15mm程
度であり、2θ=2.0゜では、T=0.6mm になる。
このTの変化がなくなるように、スリット7またはスリ
ット9の幅を出射角2θに従ってt=Tsin(2θ)で変
化させ、計測領域の出射角、または取出し角依存性をな
くすことが可能になった。
Further, this incident X-ray 3 is applied to the sample 5 at an incident angle ω.
When the outgoing X-rays 6 and fluorescent X-rays 11 which are incident on the sample and are reflected or diffracted on the sample surface are measured at the position of the outgoing angle 2θ, the outgoing X-rays 6 and fluorescent X-rays 11 are enhanced by the outgoing X-ray width limiting slit 7. And the width is limited and it enters the detector. The width of the emission X-ray width limiting slit 7 or the fluorescent X-ray width limiting slit is t, and the emission X-ray width limiting slit is
If the extraction angle of the X-ray or the fluorescent X-ray is 2θ, the width of the emitted X-ray 6 and the fluorescent X-ray 11 detected by the X-ray detector 8 or the energy dispersive X-ray detector 10 is T = t / sin (2θ )
Only the X-rays emitted from the sample surface area 4 of At this time, when t = 50 μm and 2θ = 0.2 °, T is about 15 mm, and when 2θ = 2.0 °, T = 0.6 mm.
The width of the slit 7 or the slit 9 is changed at t = Tsin (2θ) according to the emission angle 2θ so that the change of T is eliminated, and the emission angle or the extraction angle dependency of the measurement region can be eliminated. .

【0024】また、入射制限スリット2または出射制限
スリット7,9のうち少なくとも1つのスリットの幅が
試料への入射角あるいは出射角に連動して変化すると、
X線源1で発生したX線強度が同じでも、X線検出器
8,10で検出されるX線強度は変化する。この強度変
化は事前にX線強度の角依存性を測定し、測定された反
射,回折,蛍光X線強度をX線強度の角依存性に従って
補正することで、一定の試料面積からの回折,反射,蛍
光X線強度を高精度に測定することが可能になった。
If the width of at least one of the entrance limiting slit 2 or the exit limiting slits 7 and 9 changes in association with the incident angle or the outgoing angle to the sample,
Even if the X-ray intensity generated by the X-ray source 1 is the same, the X-ray intensity detected by the X-ray detectors 8 and 10 changes. This intensity change measures the angle dependence of the X-ray intensity in advance, and corrects the measured reflection, diffraction, and fluorescent X-ray intensity according to the angle dependence of the X-ray intensity to obtain diffraction from a fixed sample area, It became possible to measure reflection and fluorescent X-ray intensity with high accuracy.

【0025】図2は本発明の実施例の全体構成図であ
る。蛍光X線幅制限スリット(幅可変スリット)とエネ
ルギー分散型X線検出器は図示していない。X線源で発
生したX線は入射X線幅可変スリット12で幅50μ
m,高さ5mmの短冊状の入射X線3になる。この入射X
線3を試料5に入射する。試料5はゴニオメーター14
のω軸上に配置されている。また、ω軸と同軸の2θ軸
は2θアーム15上に配置した出射X線幅可変スリット
13,X線検出器8を動かす軸となっている。また、蛍
光X線を測定する場合は、2θアーム15を試料近くま
で伸ばし、試料に近い位置に図示していない蛍光X線幅
制限スリット(幅可変スリット)とエネルギー分散型X
線検出器を配置する。ゴニオメーター14の各軸はパル
スモータで駆動されており、その制御はドライバーとコ
ントローラユニット17を介してコンピュータ20で制
御している。また入射X線幅可変スリット12,出射X
線幅可変スリット13,蛍光X線幅可変スリットもパル
スモータで駆動され、ドライバーとコントローラユット
16を介してコンピュータ20で制御している。またX
線検出器8,エネルギー分散型X線検出器で計測したX
線強度はスケラーとチャンネルアナライザー18を経由
してコンピュータ20に取り込んで、その結果を画像表
示部19に示す構成になっている。
FIG. 2 is an overall configuration diagram of an embodiment of the present invention. The fluorescent X-ray width limiting slit (width variable slit) and the energy dispersive X-ray detector are not shown. The X-ray generated by the X-ray source is 50 μm wide at the incident X-ray width variable slit 12.
The incident X-ray 3 has a strip shape of m and a height of 5 mm. This incident X
The line 3 is incident on the sample 5. Sample 5 is a goniometer 14
It is located on the ω axis. The 2θ axis coaxial with the ω axis serves as an axis for moving the exit X-ray width variable slit 13 and the X-ray detector 8 arranged on the 2θ arm 15. When measuring fluorescent X-rays, the 2θ arm 15 is extended to the vicinity of the sample, and a fluorescent X-ray width limiting slit (width variable slit) and an energy dispersive X-ray which are not shown are provided at a position near the sample.
Place the line detector. Each axis of the goniometer 14 is driven by a pulse motor, and its control is controlled by a computer 20 via a driver and a controller unit 17. Also, the incident X-ray width variable slit 12, the exit X
The variable line width slit 13 and the fluorescent X-ray width variable slit are also driven by the pulse motor, and are controlled by the computer 20 via the driver and the controller unit 16. Also X
X measured by X-ray detector 8 and energy dispersive X-ray detector
The line intensity is taken into the computer 20 via the scaler and the channel analyzer 18, and the result is shown in the image display unit 19.

【0026】実施例の1つとしてX線反射率測定につい
て示す。試料にすれすれに入射X線3を入射し(ω<
0.2゜)、試料5からの出射X線6をX線検出器8で計
測する。計測は入射角ωを0.1゜から1.2゜まで増加
させ、X線検出器8の出射角2θは入射角ωの2倍、
0.2゜から2.2゜まで動かしながら、反射X線の強度
を測定する。入射X線幅制限スリット2の幅が50μ
m,入射角ω=0.2゜のとき、入射X線の試料表面照射
領域4の幅は約15mmである。入射角ω=1.0゜にな
ると、試料表面照射領域4の幅は約1.2mm にまで減少
する。入射X線の試料表面照射領域4の幅を約15mmで
一定にするのに必要なスリット幅{15×sin(ω)[m
m]}をコンピュータ20で計算し、入射X線幅可変ス
リット12の幅を入射角ωに従って制御することで、試
料表面照射領域4の幅を一定にすることが可能になっ
た。このとき、入射X線幅制限スリット12の幅が変化
することによって入射X線強度が変わる。そこで事前に
ωと入射X線強度の関係を測定しておき、計測されたX
線強度Ir(ω),ωと入射X線強度の関係から得られた
X線強度をI0(ω)とし、反射率R=Ir(ω)/I0(ω)
として規格化することで反射率を求める。この方法は入
射角が低角度側の全反射領域で入射X線強度が減少する
ため、全反射領域でX線検出器8がX線強度が強いため
飽和してしまうことがなくなり、X線検出器8のダイナ
ミックレンジが広がるのと同じ効果が得られる。
An X-ray reflectance measurement will be shown as one of the examples. Incident X-ray 3 is incident on the sample (ω <
The emitted X-ray 6 from the sample 5 is measured by the X-ray detector 8. In the measurement, the incident angle ω was increased from 0.1 ° to 1.2 °, the output angle 2θ of the X-ray detector 8 was twice the incident angle ω,
The intensity of the reflected X-ray is measured while moving from 0.2 ° to 2.2 °. The width of the incident X-ray width limiting slit 2 is 50μ.
When m and the incident angle ω = 0.2 °, the width of the incident surface X on the sample surface irradiation region 4 is about 15 mm. When the incident angle ω = 1.0 °, the width of the sample surface irradiation area 4 decreases to about 1.2 mm. Slit width required to keep the width of the incident X-ray irradiation area 4 on the sample surface constant at about 15 mm {15 x sin (ω) [m
[m]} is calculated by the computer 20 and the width of the incident X-ray width variable slit 12 is controlled according to the incident angle ω, whereby the width of the sample surface irradiation region 4 can be made constant. At this time, the incident X-ray intensity changes as the width of the incident X-ray width limiting slit 12 changes. Therefore, the relationship between ω and the incident X-ray intensity is measured in advance, and the measured X
The X-ray intensity obtained from the relationship between the line intensities I r (ω) and ω and the incident X-ray intensity is I 0 (ω), and the reflectance R = I r (ω) / I 0 (ω)
The reflectance is obtained by normalizing as. In this method, since the incident X-ray intensity is reduced in the total reflection area on the side where the incident angle is low, the X-ray detector 8 is not saturated because the X-ray intensity is strong in the total reflection area, and the X-ray detection is performed. The same effect that the dynamic range of the container 8 is widened is obtained.

【0027】次に、出射X線幅制限スリットを用いた場
合について示す。前述同様に試料にすれすれに入射X線
3を入射し(ω<0.2゜)、試料5からの出射X線6を
X線検出器8で計測する。計測は入射角ωを0.1゜か
ら1.2゜まで増加させ、X線検出器8の出射角2θは
入射角ωの2倍、0.2゜から2.2゜まで動かしなが
ら、出射X線6の強度を測定する。入射X線幅制限スリ
ット2の幅が50μm,入射角ω=0.2゜ のとき、入
射X線の試料表面照射領域4の幅は約15mmである。入
射角ω=1.0゜になると、試料表面照射領域4の幅は
約1.2mmにまで減少する。X線検出器8でカウントさ
れる試料表面のX線出射領域4の幅も、約15mmから約
1.2mm にまで減少する。検出されるX線が一定の試料
面積から出射した出射領域4の幅を約1.2mm で一定に
するのに必要なスリット幅{1.2× sin(2θ)[m
m]}をコンピュータ20で計算し、スリット駆動部1
3の幅を入射角ωに従って制御することで、試料表面出
射領域4の幅を一定にすることが可能になった。このと
き、入射X線幅制限スリットの幅が変化することによっ
て入射X線強度が変わる。そこで事前にωと入射X線強
度の関係を測定しておき、計測されたX線強度I
r(ω),ωと入射X線強度の関係から得られたX線強度
をI0(ω)とし、反射率R=Ir(ω)/I0(ω)として規
格化することで反射率を求めることができる。
Next, the case where the exit X-ray width limiting slit is used will be described. In the same manner as described above, the incident X-ray 3 is made to enter the sample smoothly (ω <0.2 °), and the emitted X-ray 6 from the sample 5 is measured by the X-ray detector 8. In the measurement, the incident angle ω was increased from 0.1 ° to 1.2 °, and the emission angle 2θ of the X-ray detector 8 was twice as much as the incident angle ω, and was emitted while moving from 0.2 ° to 2.2 °. The intensity of X-ray 6 is measured. When the width of the incident X-ray width limiting slit 2 is 50 μm and the incident angle ω = 0.2 °, the width of the incident surface X on the sample surface irradiation region 4 is about 15 mm. When the incident angle ω = 1.0 °, the width of the sample surface irradiation area 4 is reduced to about 1.2 mm. The width of the X-ray emission area 4 on the sample surface counted by the X-ray detector 8 is also reduced from about 15 mm to about 1.2 mm. The slit width required to keep the width of the emission area 4 in which the detected X-rays are emitted from a constant sample area constant at about 1.2 mm {1.2 x sin (2θ) [m
m]} is calculated by the computer 20 and the slit drive unit 1
By controlling the width of 3 according to the incident angle ω, the width of the sample surface emission area 4 can be made constant. At this time, the incident X-ray intensity changes as the width of the incident X-ray width limiting slit changes. Therefore, the relationship between ω and the incident X-ray intensity is measured in advance, and the measured X-ray intensity I
The X-ray intensity obtained from the relationship between r (ω), ω and the incident X-ray intensity is I 0 (ω), and the reflectance is normalized by the reflectance R = I r (ω) / I 0 (ω). The rate can be calculated.

【0028】図3はX線幅可変スリットの一実施例であ
る。直径約1cmの2本の円筒型のスリットブレード21
は500μmの間隔を開けて平行に置かれている。これ
らの円筒はスリット回転軸22の上に置かれ、パルスモ
ータ23で構成されたスリット駆動部23でスリット回
転軸22を駆動することにより回転する。円筒の半径を
r,ブレード幅をw,スリットの回転角をαとすると入
射X線の幅tは式(4)で表せる。
FIG. 3 shows an embodiment of an X-ray width variable slit. Two cylindrical slit blades 21 with a diameter of about 1 cm
Are placed in parallel with an interval of 500 μm. These cylinders are placed on the slit rotation shaft 22 and are rotated by driving the slit rotation shaft 22 by a slit driving unit 23 configured by a pulse motor 23. When the radius of the cylinder is r, the blade width is w, and the rotation angle of the slit is α, the width t of the incident X-ray can be expressed by equation (4).

【0029】 t={w+2r−2r/cos(α)} …(4) この式に従って、スリット幅がt=Tsin(ω)、または
t=Tsin(2θ)になるように回転角αを調整すること
によりX線の幅が制御可能となり、これを図2の入射X
線幅可変スリット12または、出射X線幅可変スリット
13として用いることにより、入射X線の照射領域4が
試料表面で一定にする様に、または一定の出射領域4か
ら出射した様にX線が検出できるようになった。
T = {w + 2r-2r / cos (α)} (4) According to this formula, the rotation angle α is adjusted so that the slit width becomes t = Tsin (ω) or t = Tsin (2θ). This makes it possible to control the width of the X-ray, which can be
By using as the variable line width slit 12 or the outgoing X-ray width variable slit 13, the X-rays are emitted so that the incident area 4 of the incident X-rays is constant on the sample surface or emitted from the constant outgoing area 4. It can be detected.

【0030】図4はX線幅可変スリットの別の実施例の
構成図である。2枚の厚さ1mmのスリットブレード24
は500μmの間隔を開けて平行に置かれている。これ
らのスリットブレードはマイクロメータとパルスモータ
からなる駆動部25によりスリット幅を変えることがで
きる。スリットは片方のブレードを固定し、他方のブレ
ードを移動してスリット幅を変える構造や、両方のブレ
ードを鏡像的に移動しスリット幅を変える構造でも同じ
効果が得られる。このスリットを試料表面でのX線の幅
をT,入射角をω,出射角2θとしたときのスリット幅
t=Tsin(ω),t=Tsin(2θ)となるようにスリッ
ト幅を制御することにより、入射X線の照射領域4が試
料表面で一定になる様に、または一定の出射領域4から
出射した様にX線が検出できるようになった。
FIG. 4 is a block diagram of another embodiment of the variable X-ray width slit. Two 1 mm thick slit blades 24
Are placed in parallel with an interval of 500 μm. The slit width of these slit blades can be changed by a driving unit 25 including a micrometer and a pulse motor. The same effect can be obtained with a structure in which one blade is fixed and the other blade is moved to change the slit width, or a structure in which both blades are mirror-image moved to change the slit width. The slit width is controlled so that the slit width is t = Tsin (ω), t = Tsin (2θ) where T is the width of the X-ray on the sample surface, ω is the incident angle, and 2θ is the emission angle. As a result, X-rays can be detected such that the incident X-ray irradiation area 4 is constant on the sample surface or is emitted from the constant emission area 4.

【0031】[0031]

【発明の効果】本発明によれば試料に入射したX線の回
折X線,反射X線、または蛍光X線を入射角、または出
射角と連動して測定する際に、入射または出射制限スリ
ットのうち少なくとも1つのスリットの幅が試料への入
射角あるいは出射角に連動して変化することにより入射
X線の照射領域が試料表面で一定になる。または一定の
試料面積から出射した様にX線が検出できるようにな
る。また、入射または出射制限スリットのうち少なくと
も1つのスリットの幅が試料への入射角あるいは出射角
に連動して変化することによる検出されるX線強度の変
化は事前にX線強度の角依存性を測定し、補正すること
で、一定の試料面積からの回折,反射,蛍光X線強度を
高精度に測定することが可能になる。
According to the present invention, when measuring the diffracted X-rays, reflected X-rays, or fluorescent X-rays of the X-rays incident on the sample in conjunction with the incident angle or the outgoing angle, the incident or outgoing limiting slits. The width of at least one of the slits changes in association with the incident angle or the outgoing angle to the sample, so that the incident X-ray irradiation area becomes constant on the sample surface. Alternatively, X-rays can be detected as if they were emitted from a fixed sample area. Further, a change in the detected X-ray intensity due to a change in the width of at least one of the entrance or exit limiting slits in association with the incident angle or the exit angle to the sample depends on the angular dependence of the X-ray intensity in advance. Is measured and corrected, it becomes possible to measure diffraction, reflection, and fluorescent X-ray intensity from a fixed sample area with high accuracy.

【0032】さらにX線反射率を測定する場合、全反射
角度領域でのスリット幅が小さいため、全反射角度領域
で検出されるX線強度が小さくなり、見かけ上のX線検
出器のダイナミックレンジが広くなり、高精度なX線反
射率測定が可能になる。
Further, when measuring the X-ray reflectance, since the slit width in the total reflection angle region is small, the X-ray intensity detected in the total reflection angle region is small, and the apparent dynamic range of the X-ray detector is small. Is widened, and highly accurate X-ray reflectance measurement is possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の概念図。FIG. 1 is a conceptual diagram of the present invention.

【図2】本発明の実施例の全体構成図。FIG. 2 is an overall configuration diagram of an embodiment of the present invention.

【図3】X線幅可変スリットの実施例。FIG. 3 is an example of an X-ray width variable slit.

【図4】X線幅可変スリットの別の実施例。FIG. 4 is another example of the variable X-ray width slit.

【符号の説明】[Explanation of symbols]

1…X線源、2…入射X線幅制限スリット、3…入射X
線、4…入射X線照射領域およびX線出射領域、5…試
料、6…出射X線、7…出射X線幅制限スリット、8…
X線検出器、9…蛍光X線幅制限スリット、10…エネ
ルギー分散型X線検出器、11…蛍光X線、12…入射
X線幅可変スリット、13…出射X線幅可変スリット、
14…ゴニオメーター、15…カウンターアーム、16
…X線幅可変スリット用パルスモータドライバーとコン
トローラ、17…ゴニオメーター用パルスモータドライ
バーとコントローラ、18…スケーラとチャンネルアナ
ライザー、19…画像出力装置、20…コンピュータ、
21…円筒型スリットブレード、22…スリット回転
軸、23…スリット駆動部、24…スリットブレード、
25…マイクロメータと駆動部。
1 ... X-ray source, 2 ... Incident X-ray width limiting slit, 3 ... Incident X
Lines, 4 ... Incident X-ray irradiation region and X-ray emission region, 5 ... Sample, 6 ... Emission X-ray, 7 ... Emission X-ray width limiting slit, 8 ...
X-ray detector, 9 ... Fluorescent X-ray width limiting slit, 10 ... Energy dispersive X-ray detector, 11 ... Fluorescent X-ray, 12 ... Incident X-ray width variable slit, 13 ... Outgoing X-ray width variable slit,
14 ... Goniometer, 15 ... Counter arm, 16
... Pulse motor driver and controller for X-ray width variable slit, 17 ... Pulse motor driver and controller for goniometer, 18 ... Scaler and channel analyzer, 19 ... Image output device, 20 ... Computer,
21 ... Cylindrical slit blade, 22 ... Slit rotating shaft, 23 ... Slit drive unit, 24 ... Slit blade,
25 ... Micrometer and drive unit.

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】X線源と入射X線制限スリットと試料台と
出射X線制限スリットとX線検出器とを備えたX線解析
装置において、試料に入射したX線の回折X線,反射X
線、または蛍光X線を入射角、または出射角と連動して
測定する際に、入射X線の照射領域を試料表面で一定に
するため、または一定の試料面積から出射した様にX線
を検出するために、入射または出射制限スリットのうち
少なくとも1つのスリットの幅が試料への入射角あるい
は出射角に連動して変化する入射X線または出射X線の
幅を可変できるスリットを有することを特徴とするX線
解析装置。
1. An X-ray analyzer comprising an X-ray source, an incident X-ray limiting slit, a sample stage, an outgoing X-ray limiting slit and an X-ray detector, wherein the X-ray diffracted and reflected by the X-ray incident on the sample. X
When measuring X-rays or fluorescent X-rays in conjunction with the incident angle or the emission angle, the X-rays are emitted in order to make the irradiation area of the incident X-rays constant on the sample surface or as if they were emitted from a fixed sample area. In order to detect, the width of at least one of the entrance or exit limiting slits has a slit capable of varying the width of the incident X-ray or the exit X-ray that changes in association with the incident angle or the exit angle of the sample. Characteristic X-ray analysis device.
【請求項2】請求項1において、前記X線の幅を可変で
きるスリットは、一対の円筒の曲面側を対面に配置し、
その間でX線幅を制限することを特徴とするX線の幅を
可変できるスリット。
2. The slit according to claim 1, wherein the slits capable of varying the width of the X-ray are arranged such that curved surface sides of a pair of cylinders face each other,
A slit capable of varying the width of X-rays, which is characterized by limiting the width of X-rays.
【請求項3】請求項2において、前記X線の幅を可変で
きるスリットは、試料へのX線の入射角に連動して、ス
リット全体を回転させることでX線の幅を変化させ、X
線の照射領域が試料表面で一定になるようにすることを
特徴とするX線の幅を可変できるスリット。
3. The slit according to claim 2, wherein the slit capable of varying the width of the X-ray changes the width of the X-ray by rotating the entire slit in association with the incident angle of the X-ray to the sample.
A slit capable of varying the width of X-rays, characterized in that the irradiation area of the rays is constant on the sample surface.
【請求項4】請求項2において、前記X線の幅を可変で
きるスリットは、X線の試料からの出射角に連動して、
スリット全体を回転させることで一定の試料表面から出
射したX線が検出器に入るようにスリット幅を変化させ
ることを特徴とするX線の幅を可変できるスリット。
4. The slit according to claim 2, wherein the slit capable of varying the width of the X-ray is interlocked with an emission angle of the X-ray from the sample,
A slit capable of varying the width of the X-ray, wherein the width of the X-ray is changed so that the X-ray emitted from a constant sample surface enters the detector by rotating the entire slit.
【請求項5】請求項1において、前記入射X線の幅を可
変できるスリットは、一対のスリットブレードを対面に
配置し、その間でX線幅を制限することを特徴とするX
線の幅を可変できるスリット。
5. The X-ray according to claim 1, wherein the slit capable of varying the width of the incident X-ray has a pair of slit blades arranged to face each other, and the X-ray width is limited between them.
A slit with variable line width.
【請求項6】請求項5において、前記X線の幅を可変で
きるスリットは、試料へのX線の入射角に連動して、ス
リットブレードの一方または、両方を動かすことにより
X線の幅を変化させ、X線の照射領域が試料表面で一定
になるようにすることを特徴とするX線の幅を可変でき
るスリット。
6. The slit according to claim 5, wherein the slit capable of varying the width of the X-ray changes the width of the X-ray by moving one or both of the slit blades in association with the incident angle of the X-ray to the sample. A slit capable of varying the width of X-rays, characterized in that the irradiation area of X-rays is changed to be constant on the sample surface.
【請求項7】請求項5において、前記X線の幅を可変で
きるスリットは、X線の試料からの出射角に連動して、
スリットブレードの一方または、両方を動かすことによ
り一定の試料表面から出射したX線が検出器に入るよう
にスリット幅を変化させることを特徴とするX線の幅を
可変できるスリット。
7. The slit according to claim 5, wherein the slit capable of varying the width of the X-ray is interlocked with an emission angle of the X-ray from the sample,
A slit capable of varying the width of the X-ray, wherein one or both of the slit blades is moved to change the slit width so that the X-ray emitted from a fixed sample surface enters the detector.
【請求項8】請求項1において、前記X線解析装置は前
記X線幅可変スリットのスリット幅の変化による入射X
線または、出射X線の強度変化は、入射X線強度の入射
角依存性または、出射X線強度の出射角依存性を事前に
測定し、強度を測定結果で規格化することを特徴とする
X線解析装置。
8. The X-ray analysis apparatus according to claim 1, wherein the incident X-ray is caused by a change in slit width of the variable X-ray width slit.
The change in the intensity of the X-ray or the emitted X-ray is characterized in that the incident angle dependency of the incident X-ray intensity or the emitted angle dependency of the emitted X-ray intensity is measured in advance and the intensity is standardized by the measurement result. X-ray analyzer.
JP7161753A 1995-06-28 1995-06-28 X-ray analyzer Pending JPH0915392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7161753A JPH0915392A (en) 1995-06-28 1995-06-28 X-ray analyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7161753A JPH0915392A (en) 1995-06-28 1995-06-28 X-ray analyzer

Publications (1)

Publication Number Publication Date
JPH0915392A true JPH0915392A (en) 1997-01-17

Family

ID=15741242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7161753A Pending JPH0915392A (en) 1995-06-28 1995-06-28 X-ray analyzer

Country Status (1)

Country Link
JP (1) JPH0915392A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1091408A (en) * 1996-07-25 1998-04-10 Fujitsu Ltd Change module check device and its program storage medium
JP2000055841A (en) * 1998-08-13 2000-02-25 Fujitsu Ltd X-ray analysis method
JP2008039437A (en) * 2006-08-01 2008-02-21 Rigaku Corp X-ray diffraction apparatus
JP2008153438A (en) * 2006-12-18 2008-07-03 Honda Motor Co Ltd Method for measuring buffer layer film thickness
JP2012177688A (en) * 2011-01-31 2012-09-13 Rigaku Corp X-ray diffraction device
WO2016059672A1 (en) * 2014-10-14 2016-04-21 株式会社リガク X-ray thin film inspection device
KR20170068562A (en) * 2014-10-14 2017-06-19 가부시키가이샤 리가쿠 X-ray thin film inspection device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1091408A (en) * 1996-07-25 1998-04-10 Fujitsu Ltd Change module check device and its program storage medium
JP2000055841A (en) * 1998-08-13 2000-02-25 Fujitsu Ltd X-ray analysis method
JP2008039437A (en) * 2006-08-01 2008-02-21 Rigaku Corp X-ray diffraction apparatus
JP2008153438A (en) * 2006-12-18 2008-07-03 Honda Motor Co Ltd Method for measuring buffer layer film thickness
JP4734224B2 (en) * 2006-12-18 2011-07-27 本田技研工業株式会社 Buffer layer thickness measurement method
JP2012177688A (en) * 2011-01-31 2012-09-13 Rigaku Corp X-ray diffraction device
WO2016059672A1 (en) * 2014-10-14 2016-04-21 株式会社リガク X-ray thin film inspection device
KR20170068562A (en) * 2014-10-14 2017-06-19 가부시키가이샤 리가쿠 X-ray thin film inspection device
KR20170070163A (en) * 2014-10-14 2017-06-21 가부시키가이샤 리가쿠 X-ray thin film inspection device
JPWO2016059672A1 (en) * 2014-10-14 2017-08-17 株式会社リガク X-ray thin film inspection equipment
TWI630384B (en) * 2014-10-14 2018-07-21 日商理學股份有限公司 X-ray thin film inspection apparatus
US10473598B2 (en) 2014-10-14 2019-11-12 Rigaku Corporation X-ray thin film inspection device
US10514345B2 (en) 2014-10-14 2019-12-24 Rigaku Corporation X-ray thin film inspection device

Similar Documents

Publication Publication Date Title
TWI444589B (en) Apparatus and method for analysis of a sample
US4696024A (en) Method and apparatus for detecting flaws in single crystal test samples
JPH0915392A (en) X-ray analyzer
JP2720131B2 (en) X-ray reflection profile measuring method and apparatus
JP3109789B2 (en) X-ray reflectance measurement method
JP2821585B2 (en) In-plane distribution measuring method and apparatus
JP2005140777A (en) Sample inspection method, its device, cluster tool for manufacturing microelectronics device, and device for manufacturing microelectronics device
JP2002286658A (en) Apparatus and method for measurement of x-ray reflectance
JP2921597B2 (en) Total reflection spectrum measurement device
JPH03246452A (en) Total reflecting fluorescent x-ray analyzing instrument
JP3590681B2 (en) X-ray absorption fine structure analysis method and apparatus
JP2000275113A (en) Method and apparatus for measuring x-ray stress
JP2002333409A (en) X-ray stress measuring device
JP2952284B2 (en) X-ray optical system evaluation method
JP2006105748A (en) Analyzing method accompanied by incidence of beam
JPH04329347A (en) Thin film sample x-ray diffracting device
JP3113700B2 (en) Polar figure measurement method
JPH0725684Y2 (en) Total reflection X-ray fluorescence analyzer
RU2216010C2 (en) Multichannel x-ray diffractometer
JPH06160312A (en) X-ray evaluation apparatus
JPH02107952A (en) X-ray diffraction measurement for powder
JP2615064B2 (en) Material inspection method by X-ray diffraction method
JPS6353457A (en) 2-d scan type state analyzer
JPH05296946A (en) X-ray diffraction device
JPH11337507A (en) X-ray reflectance measuring method, and device thereof