JPH09126925A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPH09126925A
JPH09126925A JP7310133A JP31013395A JPH09126925A JP H09126925 A JPH09126925 A JP H09126925A JP 7310133 A JP7310133 A JP 7310133A JP 31013395 A JP31013395 A JP 31013395A JP H09126925 A JPH09126925 A JP H09126925A
Authority
JP
Japan
Prior art keywords
pressure sensor
sensor element
pressure
semiconductor
organic solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7310133A
Other languages
Japanese (ja)
Other versions
JP3593397B2 (en
Inventor
Hiroyuki Sawamura
博之 沢村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hokuriku Electric Industry Co Ltd
Original Assignee
Hokuriku Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hokuriku Electric Industry Co Ltd filed Critical Hokuriku Electric Industry Co Ltd
Priority to JP31013395A priority Critical patent/JP3593397B2/en
Publication of JPH09126925A publication Critical patent/JPH09126925A/en
Application granted granted Critical
Publication of JP3593397B2 publication Critical patent/JP3593397B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15151Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections

Landscapes

  • Measuring Fluid Pressure (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce noise to be caused due to an external influence such as temperature change and accurately use a semiconductor pressure sensor for measuring pressure of an organic solvent gas. SOLUTION: A pressure sensor element 20 of a semiconductor and a pressure introduction part 25 where the pressure sensor element 20 is placed and pressure to be measured is introduced are airtightly joined. A plurality of protrusions 52 are provided on the surface of the pressure introduction part 25 where the bottom surface of the pressure sensor element 20 is placed or the bottom surface of the pressure sensor element 20 and an adhesive 32 is filled into a formed gap while the pressure sensor element 20 is placed at the pressure introduction part 25.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、流体圧力を半導
体のダイヤフラムにより受けて、圧力を電気信号に変換
して出力する半導体圧力センサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor which receives a fluid pressure by a semiconductor diaphragm, converts the pressure into an electric signal and outputs the electric signal.

【0002】[0002]

【従来の技術】従来、流体の圧力を精度良く測ることの
できる小型圧力センサとして半導体圧力センサが提供さ
れている。特に、センサ素子とそれを取り付ける基台と
の間の熱膨張係数の差等で生じるノイズを解消した半導
体圧力センサが、特開昭59−102131号公報等に
開示されている。この半導体圧力センサは、センサ素子
と基台との間にゲル状シリコン樹脂を接着剤として介在
させ、センサ素子と基台との間に熱膨張係数の違いによ
って発生する伸び縮みの差を吸収させることにより温度
変化に伴うノイズを解消するものである。
2. Description of the Related Art Conventionally, a semiconductor pressure sensor has been provided as a small pressure sensor capable of accurately measuring the pressure of a fluid. In particular, Japanese Patent Laid-Open No. 59-102131 discloses a semiconductor pressure sensor that eliminates noise caused by a difference in thermal expansion coefficient between a sensor element and a base to which it is attached. In this semiconductor pressure sensor, a gel silicon resin is interposed as an adhesive between the sensor element and the base to absorb a difference in expansion and contraction caused by a difference in thermal expansion coefficient between the sensor element and the base. As a result, noise associated with temperature change is eliminated.

【0003】[0003]

【発明が解決しようとする課題】上記従来の半導体圧力
センサは、キシレンガス、LPG、ガソリンなどの有機
溶媒ガスの圧力測定に使用すると、有機溶媒ガスがシリ
コン樹脂に浸透してシリコン樹脂を膨潤させるという問
題があった。このメカニズムは、図8〜図10に示すよ
うに、有機溶媒ガスを導入し始めると、その圧力で先ず
センサ素子20のダイヤフラムが歪み、時間の経過とと
もに有機溶媒ガスと接する内側から次第に接合層28が
膨潤し、センサ素子20のダイヤフラムに圧力がかかっ
ている方向とは逆方向の歪みを生じさせ、図7(B)に
示すように、圧力導入当初の出力信号にノイズが発生す
る。この歪みは、図9に示すように、センサ素子20の
角部が支点Dとなって生じる。そして、図10のように
膨潤が接合層28全体に行き渡るにしたがい、図7
(B)のグラフに示すようにセンサ素子20のひずみは
解消され出力信号は安定する。このように出力信号が安
定するまでにはかなりの時間がかかり、また有機溶媒ガ
スを空気に切り替えると、再び出力信号は上記とは逆の
工程を経るため、不安定になるという問題があった。従
って、シリコン樹脂は、有機溶媒ガスの測定に使用する
には問題が多いものであった。
When the above conventional semiconductor pressure sensor is used to measure the pressure of an organic solvent gas such as xylene gas, LPG, or gasoline, the organic solvent gas permeates the silicon resin and swells the silicon resin. There was a problem. As shown in FIGS. 8 to 10, this mechanism is such that when the introduction of the organic solvent gas is started, the diaphragm of the sensor element 20 is first distorted by the pressure, and the bonding layer 28 gradually comes in contact with the organic solvent gas with the passage of time. Swells, causing distortion in the direction opposite to the direction in which pressure is applied to the diaphragm of the sensor element 20, and noise is generated in the output signal when pressure is initially introduced, as shown in FIG. 7B. As shown in FIG. 9, this distortion occurs at the corner of the sensor element 20 as the fulcrum D. Then, as the swelling spreads throughout the bonding layer 28 as shown in FIG.
As shown in the graph of (B), the distortion of the sensor element 20 is eliminated and the output signal becomes stable. As described above, it takes a considerable amount of time for the output signal to stabilize, and when the organic solvent gas is switched to air, the output signal goes through the reverse process of the above and becomes unstable. . Therefore, the silicone resin has many problems when used for measuring organic solvent gas.

【0004】一方、有機溶媒ガスの測定に使用可能な半
導体圧力センサのセンサ素子と基台との接着剤として
は、金属ロウ等の無機系接合剤や、耐溶剤性合成ゴム等
の一部の有機系接合剤に限られていた。しかしこのよう
な接着剤も、半導体圧力センサの要求接合条件に必ずし
もマッチせず、精度、直線性、温度特性などのセンサ素
子特性を犠牲にしているものであった。
On the other hand, as an adhesive between the sensor element of the semiconductor pressure sensor and the base, which can be used for measuring the organic solvent gas, an inorganic bonding agent such as metal wax or a part of solvent resistant synthetic rubber is used. It was limited to organic binders. However, such an adhesive does not always match the required joining conditions of the semiconductor pressure sensor, but sacrifices sensor element characteristics such as accuracy, linearity, and temperature characteristics.

【0005】この発明は、上記従来の技術の問題点に鑑
みてなされたもので、温度の変化等外部からの影響によ
るノイズが少なく、かつ有機溶媒ガスの圧力測定に精度
良く使用することができる半導体圧力センサを提供する
ことを目的とする。
The present invention has been made in view of the above-mentioned problems of the prior art, and has little noise due to external influences such as temperature change, and can be used with high accuracy for measuring the pressure of an organic solvent gas. An object is to provide a semiconductor pressure sensor.

【0006】[0006]

【課題を解決するための手段】この発明は、半導体の圧
力センサ素子と、この圧力センサ素子が載置され被測定
圧を導入する圧力導入部とが気密状態に接合された半導
体圧力センサであって、上記圧力センサ素子の底面が載
置される上記圧力導入部の面、または上記センサ素子の
底面に、複数個の突起が設けられ、上記圧力センサ素子
を上記圧力導入部に載置した状態で形成される間隙に接
着剤が充填され接合された半導体圧力センサである。上
記接着剤は、シリコン樹脂系の接着剤であり、フロロシ
リコン樹脂がよりこの好ましいものである。
SUMMARY OF THE INVENTION The present invention is a semiconductor pressure sensor in which a semiconductor pressure sensor element and a pressure introducing portion on which the pressure sensor element is mounted and which introduces a measured pressure are joined in an airtight state. A state in which a plurality of protrusions are provided on the surface of the pressure introducing portion on which the bottom surface of the pressure sensor element is placed, or on the bottom surface of the sensor element, and the pressure sensor element is placed on the pressure introducing portion. It is a semiconductor pressure sensor in which an adhesive is filled in the gap formed in (1) and joined. The adhesive is a silicone resin adhesive, and a fluorosilicone resin is more preferable.

【0007】この発明の半導体圧力センサは、被測定圧
媒体である有機溶媒ガス等が圧力導入部を経て、半導体
の圧力センサ素子側に直接侵入し、圧力センサ素子と圧
力導入部の間隙の接着剤に有機溶媒ガスが接触し膨潤し
始める。これにより、圧力センサ素子のダイヤフラムが
変位しようとするが、圧力センサ素子の突起あるいは圧
力導入部の突起が、ダイヤフラムの変位の支点となり、
従来の図9に示すように印加圧力を打ち消すようには作
用しない。
In the semiconductor pressure sensor of the present invention, the organic solvent gas or the like, which is the pressure medium to be measured, directly penetrates into the pressure sensor element side of the semiconductor through the pressure introducing portion, and the gap between the pressure sensor element and the pressure introducing portion is bonded. Organic solvent gas comes into contact with the agent and begins to swell. As a result, the diaphragm of the pressure sensor element tends to be displaced, but the protrusion of the pressure sensor element or the protrusion of the pressure introducing portion serves as a fulcrum of displacement of the diaphragm.
It does not act to cancel the applied pressure as shown in FIG. 9 of the related art.

【0008】[0008]

【発明の実施の形態】以下、この発明の第一実施形態に
ついて、図面に基づいて説明する。図1〜図3はこの発
明の圧力センサを示すものであり、矩形のSi半導体の
圧力センサ素子20がセンサケース21内に設けられ、
圧力センサ素子20とリードフレーム端子22の基端部
22aとが、金線23によりワイヤボンディングされて
いる。センサーケース21は、リードフレーム端子22
と、圧力導入部である圧力導入筒25がインサート成型
されている。圧力導入筒25は、基端部にセンサ取り付
け用のフランジ部26が形成され、フランジ部26の上
面に圧力センサ素子20が取り付けられている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. 1 to 3 show a pressure sensor of the present invention, in which a rectangular Si semiconductor pressure sensor element 20 is provided in a sensor case 21,
The pressure sensor element 20 and the base end portion 22 a of the lead frame terminal 22 are wire-bonded with a gold wire 23. The sensor case 21 has a lead frame terminal 22.
The pressure introducing cylinder 25, which is a pressure introducing portion, is insert-molded. The pressure introducing cylinder 25 has a flange portion 26 for sensor attachment formed at the base end portion thereof, and the pressure sensor element 20 is attached to the upper surface of the flange portion 26.

【0009】フランジ部26には、直経50μm程度の
突起52が、圧力センサ素子20の四隅で圧力センサ素
子20の外壁より少し内側の部分に当接するように、各
1個計4個設けられている。突起52の上に圧力センサ
素子20が当接し、さらに突起52を包むように圧力セ
ンサ素子20とフランジ部26の間隙に、フロロシリコ
ン樹脂による接着剤32が塗布されてされて接合層28
が形成され、圧力センサ素子20の周囲が気密状態に接
合されている。接合する方法は、接合面にフロロシリコ
ン樹脂の接着剤32を塗布し、その上から圧力センサ素
子20を載せ、十分に接合させるように圧力センサ素子
20を水平にわずかに振動させながら押圧し、接着剤3
2を接合面に馴染ませて硬化させる。このとき突起52
がスぺーサの役割を果たし接合層28は一定の厚みを保
つことができる。
The flange portion 26 is provided with four projections 52 each having a diameter of about 50 μm so that the projections 52 come into contact with the inner portions of the outer wall of the pressure sensor element 20 at the four corners of the pressure sensor element 20, respectively. ing. The pressure sensor element 20 abuts on the protrusion 52, and the adhesive 32 made of fluorosilicone resin is applied to the gap between the pressure sensor element 20 and the flange portion 26 so as to wrap the protrusion 52.
Is formed, and the periphery of the pressure sensor element 20 is joined in an airtight state. The method for joining is to apply a fluorosilicone resin adhesive 32 on the joining surface, place the pressure sensor element 20 on it, and press the pressure sensor element 20 while slightly vibrating it horizontally so as to sufficiently join, Adhesive 3
Adapt 2 to the joint surface and cure. At this time, the protrusion 52
Plays a role of a spacer, and the bonding layer 28 can maintain a constant thickness.

【0010】そしてリードフレーム端子22は、図4に
示すように基板40にハンダ付けされ、さらに基板40
に取り付けられた外部接続端子42に接続される。ここ
で図4において中心線の右側がリードフレーム端子22
の長手方向の縦断面図であり、中心線の左側は、上記リ
ードフレーム端子22の長手方向と直交する方向の縦断
面図である。基板40が固定されたセンサケース21
は、外装ケース本体41に取り付けられ、圧力導入筒2
5と外装ケース本体41の内壁面との間には、耐有機溶
媒性ゴム等のOリング46が緊密にはめ込まれている。
また、外装ケース本体41には蓋部材48が取り付けら
れ、蓋部材48には大気圧側に接続される大気圧導入口
49が形成されている。
The lead frame terminal 22 is soldered to the substrate 40 as shown in FIG.
Is connected to the external connection terminal 42 attached to. Here, in FIG. 4, the right side of the center line is the lead frame terminal 22.
Is a vertical cross-sectional view in the longitudinal direction of FIG. 4, and the left side of the center line is a vertical cross-sectional view in a direction orthogonal to the longitudinal direction of the lead frame terminal 22. Sensor case 21 to which the substrate 40 is fixed
Is attached to the outer case body 41, and the pressure introducing tube 2
An O-ring 46 made of organic solvent resistant rubber or the like is tightly fitted between 5 and the inner wall surface of the outer case body 41.
A lid member 48 is attached to the outer case body 41, and an atmospheric pressure inlet port 49 connected to the atmospheric pressure side is formed in the lid member 48.

【0011】この実施形態の圧力センサの使用方法は、
まず圧力導入部45を被測定圧力側に接続し、大気圧導
入口49を大気圧側に開放する。圧力測定を行なう有機
溶媒ガス等は、圧力導入部45を通り、圧力導入筒25
を経て、圧力センサ素子20の裏面側に直接接触し、圧
力センサ素子20はこの圧力により歪みが生じ、それに
伴い変化する圧力センサ素子20の抵抗値を検出し有機
溶媒ガス等の圧力を測定する。
The method of using the pressure sensor of this embodiment is as follows.
First, the pressure introducing unit 45 is connected to the measured pressure side, and the atmospheric pressure introducing port 49 is opened to the atmospheric pressure side. The organic solvent gas or the like for pressure measurement passes through the pressure introducing section 45 and passes through the pressure introducing cylinder 25.
After that, the pressure sensor element 20 comes into direct contact with the back surface side of the pressure sensor element 20, and the pressure sensor element 20 is distorted by this pressure, and the resistance value of the pressure sensor element 20 which changes with it is detected to measure the pressure of the organic solvent gas or the like. .

【0012】この実施形態の圧力センサは、有機溶媒ガ
スの測定に使用した場合、接合層28に使用されている
接着剤32が、少々であるが図8〜10に示すように有
機溶媒ガスに接触して圧力センサ素子20の内壁側から
膨潤を生ずる。そして応力がかかる際に、圧力センサ素
子20の変位は、突起52の頂点を支点とする。この部
分は、圧力センサ素子20の四隅であり、強度が最も高
く応力による変化が最も小さい部分であるため、変位が
少なく圧力センサ素子20の歪みを最少に抑えることが
できる。また、一定の厚みを有するフロロシリコン樹脂
32が膨潤を互いに吸収し、圧力センサ素子20の歪み
を抑えることができる。また、圧力センサ素子20をフ
ランジ部26に取り付ける際に、図2の二点鎖線に示す
ように、従来の圧力センサに生じていた、はみ出した接
着剤32が圧力センサ素子20の側面へ這い上がるとい
うことがないため、圧力センサ素子20の側面に応力が
生じることが無く、圧力センサ素子20に余分な歪みが
発生しないものである。
When the pressure sensor of this embodiment is used for measuring the organic solvent gas, the adhesive 32 used in the bonding layer 28 is slightly changed to the organic solvent gas as shown in FIGS. Upon contact, swelling occurs from the inner wall side of the pressure sensor element 20. When the stress is applied, the displacement of the pressure sensor element 20 uses the apex of the protrusion 52 as a fulcrum. Since these portions are the four corners of the pressure sensor element 20 and have the highest strength and the smallest change due to stress, the displacement of the pressure sensor element 20 is small and the strain of the pressure sensor element 20 can be minimized. Further, the fluorosilicone resin 32 having a constant thickness absorbs the swelling from each other, and the strain of the pressure sensor element 20 can be suppressed. Further, when the pressure sensor element 20 is attached to the flange portion 26, as shown by the chain double-dashed line in FIG. 2, the protruding adhesive 32 generated in the conventional pressure sensor crawls up to the side surface of the pressure sensor element 20. Therefore, no stress is generated on the side surface of the pressure sensor element 20, and no extra strain is generated on the pressure sensor element 20.

【0013】また、気温の変化などで圧力センサ素子2
0とフランジ部26の間で、熱膨張の差によって応力が
生じる場合も、圧力センサ素子20と突起52は点で接
しているため、面で接するよりも応力が伝わりにくい。
さらに、一定の厚みを有するフロロシリコン樹脂の接着
剤32によっても、熱膨張の差によって生ずる応力が吸
収される。
Further, the pressure sensor element 2 is affected by changes in temperature.
Even when a stress is generated between 0 and the flange portion 26 due to a difference in thermal expansion, the pressure sensor element 20 and the protrusion 52 are in contact with each other at a point, and therefore the stress is less likely to be transmitted than in the case of being in contact with the surface.
Further, the fluorosilicone resin adhesive 32 having a constant thickness also absorbs the stress caused by the difference in thermal expansion.

【0014】この圧力センサは、有機溶媒ガスや温度変
化などによる圧力センサ素子20の歪みを解消し、出力
信号を安定させ、流体圧力の測定を正確に行なうもので
ある。また、作業性を犠牲にすることなく均一の厚みを
有する接合層28を形成することができるので、均一の
商品を安定して製造することができる。
This pressure sensor eliminates distortion of the pressure sensor element 20 due to organic solvent gas, temperature change, etc., stabilizes the output signal, and accurately measures the fluid pressure. Moreover, since the bonding layer 28 having a uniform thickness can be formed without sacrificing workability, a uniform product can be stably manufactured.

【0015】次にこの発明の第二実施形態について図
5、図6にもとづいて説明する。ここで、上記の実施形
態と同様の部材は同一符号を付して説明を省略する。こ
の実施形態の圧力センサは、圧力センサ素子20の底面
の四隅で外壁から少し内側の位置に各一個適当な大きさ
の半球状の突起54が設けられている。突起54はフラ
ンジ部26に当接し、突起54を包むように圧力センサ
素子20とフランジ部26の間隙にフロロシリコン樹脂
の接着剤32が充填され、接合層28が形成されてい
る。この実施形態によっても上記実施形態と同様の効果
を得ることができる。
Next, a second embodiment of the present invention will be described with reference to FIGS. Here, the same members as those in the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted. In the pressure sensor of this embodiment, hemispherical protrusions 54 each having an appropriate size are provided at four corners of the bottom surface of the pressure sensor element 20 at positions slightly inside the outer wall. The protrusion 54 is in contact with the flange portion 26, and a gap between the pressure sensor element 20 and the flange portion 26 is filled with a fluorosilicone resin adhesive 32 so as to wrap the protrusion 54 to form a bonding layer 28. Also in this embodiment, the same effect as the above embodiment can be obtained.

【0016】なお、この発明の圧力センサは、上記各実
施形態に限定されるものではなく、各部材の形状や位
置、また素材など変更可能なものである。突起の形状や
位置も適宜変更可能であり、圧力センサ素子や、圧力導
入部と一体にまたは別体に形成可能なものである。
The pressure sensor of the present invention is not limited to the above-described embodiments, but the shape and position of each member and the material can be changed. The shape and position of the protrusion can be changed as appropriate, and can be formed integrally with the pressure sensor element or the pressure introducing portion or separately.

【0017】[0017]

【実施例】図7は、この発明の一実施例の圧力センサを
LPGガスに使用したときの出力信号の変化を、従来品
の測定結果と比較したチャートである。縦軸は出力信号
の電圧を示し、横軸は時間を示す。このチャートによる
と、LPG導入直後に、従来品の場合、出力信号に大き
な振幅が生じ、時間の経過にともなって出力が減衰し、
かなりの時間をかけて安定な出力となる。それに比べ、
この実施例では、LPG導入時に圧力がかかることによ
る波形の変化を生ずるが、直後から安定な出力波形とな
る。
EXAMPLE FIG. 7 is a chart comparing the change of the output signal when the pressure sensor of one example of the present invention is used for LPG gas with the measurement result of the conventional product. The vertical axis represents the voltage of the output signal, and the horizontal axis represents time. According to this chart, in the case of the conventional product, a large amplitude is generated in the output signal immediately after the introduction of the LPG, and the output is attenuated with the passage of time,
The output will be stable over a considerable period of time. In comparison,
In this embodiment, the waveform changes due to the pressure applied when the LPG is introduced, but the output waveform becomes stable immediately after.

【0018】[0018]

【発明の効果】この発明の圧力センサは、キシレンガス
やLPGガスなどの有機物溶解能の大きなガスに使用し
ても、出力に初期ドリフトが発生せず、安定した出力信
号が得られるもので、使用当初より正確な測定が可能な
ものである。。
EFFECTS OF THE INVENTION The pressure sensor of the present invention does not cause an initial drift in the output and can obtain a stable output signal even when used for a gas having a large ability to dissolve organic substances, such as xylene gas or LPG gas. Accurate measurement is possible from the beginning of use. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の第一実施形態の圧力センサ装置の縦
断面図である。
FIG. 1 is a vertical sectional view of a pressure sensor device according to a first embodiment of the present invention.

【図2】この第一実施形態の半導体圧力センサの圧力セ
ンサ素子とフランジ部の接合層の拡大縦断面図である。
FIG. 2 is an enlarged vertical cross-sectional view of a bonding layer between a pressure sensor element and a flange portion of the semiconductor pressure sensor of the first embodiment.

【図3】この第一実施形態の半導体圧力センサのフラン
ジ部とセンサケースの正面図である。
FIG. 3 is a front view of a flange portion and a sensor case of the semiconductor pressure sensor of the first embodiment.

【図4】この第一実施形態の半導体圧力センサを外装ケ
ースに取り付けた状態の縦断面図である。
FIG. 4 is a vertical cross-sectional view of the semiconductor pressure sensor of the first embodiment attached to an outer case.

【図5】この発明の第二実施形態の半導体圧力センサの
部分拡大縦断面図である。
FIG. 5 is a partially enlarged vertical sectional view of a semiconductor pressure sensor according to a second embodiment of the present invention.

【図6】この第二実施例の半導体圧力センサの圧力セン
サ素子の正面図である。
FIG. 6 is a front view of a pressure sensor element of the semiconductor pressure sensor of the second embodiment.

【図7】この発明の一実施例の半導体圧力センサに有機
溶媒ガスを導入したときの出力信号(A)と従来品の出
力信号(B)とを比較したチャートである。
FIG. 7 is a chart comparing an output signal (A) when an organic solvent gas is introduced into the semiconductor pressure sensor of one embodiment of the present invention and an output signal (B) of a conventional product.

【図8】有機溶媒ガス導入前の半導体圧力センサのシリ
コン樹脂接着剤を示す模式図である。
FIG. 8 is a schematic view showing a silicon resin adhesive of a semiconductor pressure sensor before introducing an organic solvent gas.

【図9】有機溶媒ガス導入時の半導体圧力センサのシリ
コン樹脂接着剤の挙動を示す模式図である。
FIG. 9 is a schematic diagram showing the behavior of the silicone resin adhesive of the semiconductor pressure sensor when an organic solvent gas is introduced.

【図10】有機溶媒ガス導入後の半導体圧力センサのシ
リコン樹脂接着剤を示す模式図である。
FIG. 10 is a schematic view showing a silicon resin adhesive of a semiconductor pressure sensor after introducing an organic solvent gas.

【符号の説明】[Explanation of symbols]

20 圧力センサ素子 25 圧力導入筒 28 接合層 32 接着剤 52,54 突起 20 Pressure Sensor Element 25 Pressure Introducing Tube 28 Bonding Layer 32 Adhesive 52, 54 Protrusion

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体の圧力センサ素子と、この圧力セ
ンサ素子が載置され被測定圧を導入する圧力導入部とが
気密状態に接合された半導体圧力センサにおいて、上記
圧力センサ素子の底面が載置される上記圧力導入部の面
に、複数個の突起が設けられ、上記圧力センサ素子を上
記圧力導入部に載置した状態で形成される間隙に接着剤
が充填され接合されたことを特徴とする半導体圧力セン
サ。
1. In a semiconductor pressure sensor in which a semiconductor pressure sensor element and a pressure introducing portion for mounting the pressure sensor element and introducing a pressure to be measured are joined in an airtight state, a bottom surface of the pressure sensor element is mounted. A plurality of protrusions are provided on the surface of the pressure introducing portion to be placed, and an adhesive is filled in and bonded to a gap formed in a state where the pressure sensor element is placed on the pressure introducing portion. And semiconductor pressure sensor.
【請求項2】 半導体の圧力センサ素子と、この圧力セ
ンサ素子が載置され被測定圧を導入する圧力導入部とが
気密状態に接合された半導体圧力センサにおいて、上記
圧力センサ素子の底面に複数個の突起が設けられ、上記
圧力センサ素子を上記圧力導入部に載置した状態で形成
される間隙に接着剤が充填され接合されたことを特徴と
する半導体圧力センサ。
2. A semiconductor pressure sensor in which a semiconductor pressure sensor element and a pressure introducing portion for mounting the pressure sensor element and introducing a pressure to be measured are joined in an airtight state, and a plurality of pressure sensor elements are provided on a bottom surface of the pressure sensor element. A semiconductor pressure sensor, comprising a plurality of protrusions, wherein an adhesive is filled in and bonded to a gap formed in a state where the pressure sensor element is placed on the pressure introducing portion.
【請求項3】 上記接着剤は、フロロシリコン樹脂から
なる請求項1または2記載の半導体圧力センサ。
3. The semiconductor pressure sensor according to claim 1, wherein the adhesive is made of fluorosilicone resin.
JP31013395A 1995-11-02 1995-11-02 Semiconductor pressure sensor Expired - Lifetime JP3593397B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31013395A JP3593397B2 (en) 1995-11-02 1995-11-02 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31013395A JP3593397B2 (en) 1995-11-02 1995-11-02 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPH09126925A true JPH09126925A (en) 1997-05-16
JP3593397B2 JP3593397B2 (en) 2004-11-24

Family

ID=18001571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31013395A Expired - Lifetime JP3593397B2 (en) 1995-11-02 1995-11-02 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JP3593397B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011065250A1 (en) * 2009-11-25 2011-06-03 アルプス電気株式会社 Force sensor
CN102386238A (en) * 2010-08-31 2012-03-21 三美电机株式会社 Sensor apparatus and method for mounting semiconductor sensor device
WO2022239589A1 (en) * 2021-05-13 2022-11-17 株式会社日立ハイテク Pressure sensor module and dispensing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011065250A1 (en) * 2009-11-25 2011-06-03 アルプス電気株式会社 Force sensor
CN102510998A (en) * 2009-11-25 2012-06-20 阿尔卑斯电气株式会社 Force sensor
CN102386238A (en) * 2010-08-31 2012-03-21 三美电机株式会社 Sensor apparatus and method for mounting semiconductor sensor device
JP2012073233A (en) * 2010-08-31 2012-04-12 Mitsumi Electric Co Ltd Sensor device and mounting method of semiconductor sensor element
WO2022239589A1 (en) * 2021-05-13 2022-11-17 株式会社日立ハイテク Pressure sensor module and dispensing device

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