JPH09113935A - Liquid crystal display device and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obviate the impartation of distortions to image signals and to prevent display defects by packing an org. resin into the holes or pinholes of the insulating film formed on the black matrix of the thin-film transistors(TFTs) on a substrate. SOLUTION: Island-shaped active layers 103 of the TFTs are formed via oxidized films 102 on the glass substrate 101 and the gate insulating films 104 are formed thereon. Next, the insulating film 109 formed over the entire surface is etched to form electrodes 110, 111 of pixels TFTs. The black matrix 113 is formed on the insulating film 112 and, further, the insulating film 114 is formed thereon and the surface thereof is coated with a photosensitive org. resin 115 consisting of a photoresist of a positive type by a spinner, etc. At this time, the org. resin is sufficiently packed into the holes or pinholes 117 of the insulating film 114. Contact holes arriving at the electrodes 111 are formed by etching the insulating film 114 and thereafter, pixel electrodes 119 are formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device.

[0002]

2. Description of the Related Art In recent years, an active matrix type liquid crystal display device using thin film transistors has been put into practical use, and at present, research and development aiming at increasing the size of this device is actively conducted.
In this active matrix type liquid crystal display device, a TFT is provided at an intersection of a scanning line extending in a row direction and a signal line extending in a column direction between pixel electrodes in which a plurality of pixel electrodes are arranged in a matrix. Forming a TFT array.

A black matrix is provided on the TFT substrate. In such a device, a semiconductor film, a gate insulating film, a gate electrode, a source, a drain electrode, an insulating film, a pixel electrode, and a black matrix are laminated on a substrate.

[0004]

2. Description of the Related Art In the above structure, when the black matrix is a metal film, it has a low resistance. Therefore, when there is a defect in the insulating film, the black matrix is used to interpose between the source electrode and the drain electrode, Alternatively, there is a drawback that the pixel electrodes are short-circuited. In the case of the liquid crystal display device in which the black matrix is formed of the metal film as described above, there is a disadvantage in that the above-mentioned drawbacks distort the image signal and cause display failure.

[0005]

SUMMARY OF THE INVENTION The present invention has been made in view of the above drawbacks, and provides a liquid crystal display device having a structure that does not give distortion to an image signal and does not cause display defects. is there.

[0006]

In order to solve the above problems, the present invention has the following constitution. First configuration In a liquid crystal display device including a thin film transistor on a substrate, a black matrix on the thin film transistor, an insulating film on the black matrix, and a pixel electrode on the insulating film, a hole in the insulating film or A liquid crystal display device characterized in that the pinhole is filled with an organic resin.

Second configuration In a liquid crystal display device comprising a thin film transistor on a substrate, an insulating film on the thin film transistor, and a black matrix on the insulating film, an organic resin is provided in a hole or a pinhole of the insulating film. A liquid crystal display device characterized by being filled with.

Third Configuration In a liquid crystal display device comprising a thin film transistor on a substrate, a pixel electrode on the thin film transistor, an insulating film on the pixel electrode, and a black matrix on the insulating film, A liquid crystal display device characterized in that holes or pinholes are filled with an organic resin.

Fourth configuration: a step of forming a first insulating film covering the thin film transistor, a step of forming an opening reaching the source and drain regions of the thin film transistor in the first insulating film, and the source and drain region. A step of forming an electrode and / or a wire connected to the electrode, a step of forming a second insulating film to cover the electrode and / or the wire connected to the source and drain regions, and a black film on the second insulating film. A step of forming a matrix, a step of forming a third insulating film covering the black matrix, a step of forming a positive photosensitive organic resin on the third insulating film, and the photosensitive organic resin. A step of irradiating light from the side to fix the organic resin in the holes or pinholes formed in the third insulating film; And a step of removing the non-fixed organic resin and a step of forming a pixel electrode on the third insulating film.

Fifth Configuration: A step of forming a first insulating film covering the thin film transistor, a step of forming an opening in the first insulating film reaching the source and drain regions of the thin film transistor, and the source and drain regions. A step of forming an electrode and / or a wire connected to the source and the drain, a step of forming a second insulating film covering the electrode and / or the wire connected to the source and drain regions, and a positive electrode on the second insulating film. Forming a photosensitive organic resin of a mold, and irradiating light from the photosensitive organic resin side to fix the organic resin in the holes or pinholes formed in the second insulating film,
Removing unfixed organic resin formed on the second insulating film, forming a black matrix on the second insulating film, and covering the black matrix to form a third insulating film And a step of forming a pixel electrode on the third insulating film.

Sixth Structure A step of forming a first insulating film covering the thin film transistor, a step of forming an opening reaching the source and drain regions of the thin film transistor in the first insulating film, and the source and drain regions. A step of forming an electrode and / or a wiring connected to the electrode, a step of forming a second insulating film covering the electrode and / or the wiring connected to the source and drain regions, and a pixel on the second insulating film. A step of forming an electrode, a step of forming a third insulating film on the pixel electrode, a step of forming a positive photosensitive organic resin on the third insulating film, and the photosensitive organic resin side Further irradiating light to fix the organic resin in the holes or pinholes formed in the third insulating film;
And a step of removing the non-fixed organic resin formed on the insulating film, and forming a black matrix on the third insulating film.

[0012]

According to the present invention, holes or pinholes formed in the insulating film are filled with an organic resin so that the black matrix formed through the insulating film and the pixel electrode are connected to each other, or black. Since there is no connection between the matrix and the electrodes and wirings extending from the TFT, it is possible to prevent a short circuit between the source electrode and the drain electrode or between the pixel electrodes via the black matrix. Become. Hereinafter, the present invention will be described in detail with reference to examples.

[0013]

【Example】

[Embodiment 1] This embodiment shows a manufacturing process of a pixel region of an active matrix type liquid crystal display device. FIG. 1 shows an outline of the manufacturing process of this example. First, as a first insulating substrate, a base oxide film 10 is formed on a glass substrate 101.
As No. 2, a silicon oxide film having a thickness of 1000Å to 3000Å was formed. As a method of forming this silicon oxide film, a sputtering method in an oxygen atmosphere or a plasma CVD method may be used.

Then, an amorphous silicon film of 300 to 1500 is formed by plasma CVD or LPCVD.
Å, preferably 500 to 1000Å. Then, thermal annealing was performed at a temperature of 500 ° C. or higher, preferably 500 to 600 ° C. to crystallize the silicon film or enhance the crystallinity. After crystallization by thermal annealing, light (laser light or the like) may be annealed to further enhance crystallization. Further, in crystallization by thermal annealing, JP-A-6-244103 and JP-A-6-244 are known.
As described in Japanese Patent Laid-Open No. 104, a (catalyst element) that promotes crystallization of silicon such as nickel may be added.

Next, the silicon film was etched to form the active layer 103 of the TFT of the island-shaped drive circuit. Further, the thickness is 500 to 200 by the sputtering method in an oxygen atmosphere.
A gate insulating film 104 of 0Å silicon oxide was formed. A plasma CVD method may be used as a method for forming the gate insulating film. When the silicon oxide film is formed by the plasma CVD method, the source gas is dinitrogen monoxide (N
₂ O) or oxygen (O ₂ ) and monosilane (SiH ₄ )
It was better to use.

After that, aluminum having a thickness of 2000 to 6000Å was formed on the entire surface of the substrate by a sputtering method. Here, aluminum may contain silicon, scandium, palladium, or the like in order to prevent hillocks from being generated by a subsequent thermal process. Then, this is etched to form the gate electrode 105.

Next, this aluminum is anodized.
The surface of aluminum becomes aluminum oxide 106 by anodic oxidation, and has an effect as an insulator. (Fig. 1 (A))

In this embodiment, P ions are implanted to form an N channel type TFT. For the implantation, phosphorus is implanted by using an ion doping method using phosphine as a doping gas. The dose amount is 1 × 10 ^{12 to} 5 × 10 ¹³ atoms / cm ² . As a result, strong N-type regions (source and drain) 107 and 108 are formed. (Figure 1
(B))

Next, thermal annealing was performed at 450 to 850 ° C. for 0.5 to 3 hours to recover the damage caused by the doping, activate the doping impurities, and recover the crystallinity of silicon.

Next, a first insulating film 109 is formed on the entire surface,
A silicon oxide film having a thickness of 3000 to 6000Å was formed. This may be a silicon nitride film or a multilayer of a silicon oxide film and a silicon nitride film.

Next, the insulating film 109 was etched by wet etching or dry etching to form contact holes in the source and drain. Next, the thickness is 2000 Å to 6000 by the sputtering method.
Form the aluminum film of Å or the multilayer film of titanium and aluminum. By etching this, pixel TFT
The electrodes and wirings 110 and 111 were formed. (Figure 1
(C))

Next, a thickness of 100 is obtained by the plasma CVD method.
A silicon oxide film having a thickness of 0 Å to 4000 Å was formed as the second insulating film 112. The second insulating film is a silicon nitride film,
A silicon oxynitride film or a stacked film of these films and a silicon oxide film can be used.

Next, a black matrix 113 made of a titanium or chromium film having a thickness of 2000 Å was formed on the second insulating film 112 except the pixel portion by a sputtering method. Next, by the plasma CVD method, the thickness is 1000Å to 4000.
A Å silicon oxide film was formed as the third insulating film 114.
A silicon nitride film, a silicon oxynitride film, or a laminated film of these films and a silicon oxide film can be used as the third insulating film. (Fig. 1 (D))

Next, a photosensitive organic resin 115 was coated on the third insulating film 114. At this time, care was taken to ensure that the organic resin was sufficiently impregnated into the pinhole or the like. As the photosensitive organic resin, a positive photoresist is used in this embodiment. This photosensitive organic resin is applied to the entire surface of this semiconductor by a spinner, coater or spray method for 0.1-0.1%.
It is formed to a thickness of 5 μm. At this time, it is important to sufficiently fill the pinholes and the like.

For example, when a spinner was used, the resist was applied under the conditions of 500 rpm for 10 seconds and 2000 rpm for 20 seconds. Further, the applied organic resin was prebaked at 120 ° C. for 120 seconds. Further, as a developing step, ultraviolet light (wavelength 300 to 45
(0 nm) 116 to irradiate the photosensitive organic resin so that the organic resin filled in the pinholes is fixed and the organic resin on the interlayer insulator is not fixed. (FIG. 1 (E))

In this embodiment, this condition is 10 mW /
It was carried out at 20 cm ² for 20 seconds, and then a developing process was performed. After that, the whole of them was rinsed by a known method. Then, the non-immobilized organic resin other than the immobilized organic resin could be dissolved in the pinhole 117.

Further, post-baking was performed to chemically stabilize the organic resin 118 filled inside the exposed pinhole. Through the above steps, the third insulating film 11
4 can be selectively filled with the organic resin insulator only inside the pinhole 117 existing inside. Then the third
Of the pixel T and the second insulating film are etched.
A contact hole reaching the FT electrode 111 was formed. Next, the thickness of the film formed by the sputtering method is 500 to 1500 Å
Then, the ITO (indium tin oxide) film was etched to form a pixel electrode 119. (FIG. 1 (F))

According to this embodiment, since the pinholes of the third insulating film are filled with the organic resin, the black matrix made of titanium or chromium film formed on the second insulating film and the pixel electrode 119. It becomes possible to solve the problem that the other pixel electrodes are connected to each other by connecting and via the pinhole.

[Embodiment 2] This embodiment shows another manufacturing process of a pixel region of an active matrix type liquid crystal display device. FIG. 2 shows an outline of the manufacturing process of this example. First, on a glass substrate 201 as a first insulating substrate, a base oxide film 202 having a thickness of 1000Å to 300
A 0Å silicon oxide film was formed. As a method of forming this silicon oxide film, a sputtering method in an oxygen atmosphere or plasma C
The VD method may be used.

After that, an amorphous silicon film of 300 to 1500 is formed by a plasma CVD method or an LPCVD method.
Å, preferably 500 to 1000Å. Then, thermal annealing was performed at a temperature of 500 ° C. or higher, preferably 500 to 600 ° C. to crystallize the silicon film or enhance the crystallinity. After crystallization by thermal annealing, light (laser light or the like) may be annealed to further enhance crystallization. Further, in crystallization by thermal annealing, JP-A-6-244103 and JP-A-6-244 are known.
As described in Japanese Patent Laid-Open No. 104, a (catalyst element) that promotes crystallization of silicon such as nickel may be added.

Next, the silicon film was etched to form the active layer 203 of the TFT of the island-shaped drive circuit. Further, the thickness is 500 to 200 by the sputtering method in an oxygen atmosphere.
A gate insulating film 204 of 0Å silicon oxide was formed. A plasma CVD method may be used as a method for forming the gate insulating film.

When the silicon oxide film is formed by the plasma CVD method, the source gas is dinitrogen monoxide (N ₂
It was preferable to use O) or oxygen (O ₂ ) and monosilane (SiH ₄ ). After that, thickness 2000 ~
6000Å aluminum was formed on the entire surface of the substrate by the sputtering method. Here, aluminum may contain silicon, scandium, palladium, or the like in order to prevent hillocks from being generated by a subsequent thermal process. Then, this is etched to form a gate electrode 205. Next, this aluminum is anodized. The surface of aluminum becomes aluminum oxide 206 by anodic oxidation, and has an effect as an insulator.

In this embodiment, P ions are implanted to form an N-channel TFT. For the implantation, phosphorus is implanted by using an ion doping method using phosphine as a doping gas. The dose amount is 1 × 10 ^{12 to} 5 × 10 ¹³ atoms / cm ² . As a result, strong N-type regions (source and drain) 207 and 208 are formed. (Figure 2
(B) Next, by performing thermal annealing at 450 to 850 ° C. for 0.5 to 3 hours, damage due to doping was recovered, doping impurities were activated, and silicon crystallinity was recovered.

Next, a first insulating film 209 is formed on the entire surface,
A silicon oxide film having a thickness of 3000 to 6000Å was formed. This may be a silicon nitride film or a multilayer of a silicon oxide film and a silicon nitride film. Next, the insulating film 209 was etched by a wet etching method or a dry etching method to form contact holes in the source and drain.

Next, a thickness of 2000 Å ~ is obtained by the sputtering method.
An aluminum film of 6000 ° or a multilayer film of titanium and aluminum is formed. This was etched to form electrodes / wirings 210 and 211 of the pixel TFT. (FIG. 2 (C)) Next, by a plasma CVD method, a thickness of 1000Å to 400
A 0Å silicon oxide film was formed as the second insulating film 212. As the second insulating film, a silicon nitride film, a silicon oxynitride film, or a laminated film of these films and a silicon oxide film can be used.

Next, a photosensitive organic resin 213 was coated on the second insulating film 212. At this time, care was taken to ensure that the organic resin was sufficiently impregnated into the pinhole or the like. As the photosensitive organic resin, a positive photoresist is used in this embodiment. This photosensitive organic resin is applied to the entire surface of this semiconductor by a spinner, coater or spray method for 0.1 to 0.1
It is formed to a thickness of 5 μm. At this time, it is important to sufficiently fill the pinholes and the like.

For example, when a spinner was used, the resist was applied under the conditions of 500 rpm for 10 seconds and 2000 rpm for 20 seconds. Further, the applied organic resin was prebaked at 120 ° C. for 120 seconds. Further, as a developing step, ultraviolet light (wavelength 300 to 45
(0 nm) 214, and the organic resin filled in the pinholes of this photosensitive organic resin was fixed, and further, the organic resin on the interlayer insulator was exposed so as not to be fixed. (Fig. 2 (D))

In this embodiment, this condition is 10 mW /
It was carried out at 20 cm ² for 20 seconds, and then a developing process was performed. After that, the whole of them was rinsed by a known method. As a result, the non-immobilized organic resin other than the organic resin 215 immobilized in the pinhole could be dissolved away.

Further, post-baking was performed to chemically stabilize the organic resin 215 filled inside the exposed pinhole. Through the above steps, the organic resin insulator can be selectively filled only inside the pinhole.

Next, a plaque matrix 216 made of a titanium or chromium film having a thickness of 2000 Å was formed on the second insulating film 212 except for the pixel portion by a sputtering method.
(FIG. 2 (E)) Next, a thickness of 1000Å to 400 is measured by a plasma CVD method.
A 0Å silicon oxide film was formed as the third insulating film 217. A silicon nitride film, a silicon oxynitride film, or a laminated film of these films and a silicon oxide film can be used as the third insulating film.

Next, the third insulating film and the second insulating film were etched to form a contact hole reaching the electrode 211 of the pixel TFT. Next, the ITO (indium tin oxide) film having a thickness of 500 to 1500 Å formed by the sputtering method was etched to form the pixel electrode 218. (Figure 2
(F))

According to this embodiment, since the pinholes of the second insulating film 212 are filled with the organic resin, the black matrix and the pixel formed of the titanium or chromium film formed on the second insulating film 212 and the pixels. It is possible to solve the problem that the electrodes of the TFTs are connected to each other through the pinholes, so that the electrodes of other pixel TFTs are connected to each other.

[Embodiment 3] This embodiment shows another manufacturing process of a pixel region of an active matrix type liquid crystal display device. FIG. 3 shows an outline of the manufacturing process of this embodiment. First, on a glass substrate 301 as a first insulating substrate, a base oxide film 302 having a thickness of 1000 Å to 300
A 0Å silicon oxide film was formed. As a method of forming this silicon oxide film, a sputtering method in an oxygen atmosphere or plasma C
The VD method may be used.

After that, an amorphous silicon film of 300 to 1500 is formed by a plasma CVD method or an LPCVD method.
Å, preferably 500 to 1000Å. Then, thermal annealing was performed at a temperature of 500 ° C. or higher, preferably 500 to 600 ° C. to crystallize the silicon film or enhance the crystallinity. After crystallization by thermal annealing, light (laser light or the like) may be annealed to further enhance crystallization. Further, in crystallization by thermal annealing, JP-A-6-244103 and JP-A-6-244 are known.
As described in Japanese Patent Laid-Open No. 104, a (catalyst element) that promotes crystallization of silicon such as nickel may be added.

Next, the silicon film was etched to form the active layer 303 of the TFT of the island-shaped drive circuit. Further, the thickness is 500 to 200 by the sputtering method in an oxygen atmosphere.
A gate insulating film 304 of 0Å silicon oxide was formed. A plasma CVD method may be used as a method for forming the gate insulating film. When the silicon oxide film is formed by the plasma CVD method, the source gas is dinitrogen monoxide (N
₂ O) or oxygen (O ₂ ) and monosilane (SiH ₄ )
It was better to use.

Thereafter, aluminum having a thickness of 2000 to 6000Å was formed on the entire surface of the substrate by the sputtering method. Here, aluminum may contain silicon, scandium, palladium, or the like in order to prevent hillocks from being generated by a subsequent thermal process. Then, this is etched to form a gate electrode 305. Next, this aluminum is anodized. The surface of aluminum becomes aluminum oxide 306 by anodic oxidation and has an effect as an insulator. (Fig. 3 (A))

Then, in this embodiment, P ions are implanted to form an N-channel TFT. For the implantation, phosphorus is implanted by using an ion doping method using phosphine as a doping gas. The dose amount is 1 × 10 ^{12 to} 5 × 10 ¹³ atoms / cm ² . As a result, strong N-type regions (source and drain) 307 and 308 are formed. (Fig. 3
(B) Next, by performing thermal annealing at 450 to 850 ° C. for 0.5 to 3 hours, damage due to doping was recovered, doping impurities were activated, and silicon crystallinity was recovered.

Next, a first insulating film 309 is formed on the entire surface,
A silicon oxide film having a thickness of 3000 to 6000Å was formed. This may be a silicon nitride film or a multilayer of a silicon oxide film and a silicon nitride film. Next, the insulating film 309 was etched by a wet etching method or a dry etching method to form contact holes in the source and the drain.
Next, an aluminum film having a thickness of 2000 Å to 6000 Å or a multilayer film of titanium and aluminum is formed by a sputtering method. This was etched to form electrodes / wirings 310 and 311 of the pixel TFT. (FIG. 3 (C)) Next, a thickness of 1000Å to 400 is measured by a plasma CVD method.
A 0Å silicon oxide film was formed as the second insulating film 312. As the second insulating film, a silicon nitride film, a silicon oxynitride film, or a laminated film of these films and a silicon oxide film can be used.

Next, the second insulating film 312 was etched to form a contact hole reaching the electrode 311 of the pixel TFT. Next, a thickness of 500 to 1 formed by the sputtering method
A 500 Å ITO (indium tin oxide) film was etched to form a pixel electrode 313. Next, plasma CVD
By the method, a silicon oxide film having a thickness of 1000 Å to 4000 Å was formed as the third insulating film 314. (FIG. 3D) As the third insulating film 314, a silicon nitride film, a silicon oxynitride film, or a laminated film of these films and a silicon oxide film can be used.

Next, a photosensitive organic resin 315 was coated on the third insulating film 314. At this time, care was taken to ensure that the organic resin was sufficiently impregnated into the pinhole or the like. As the photosensitive organic resin, a positive photoresist is used in this embodiment. This photosensitive organic resin is applied to the entire surface of this semiconductor by a spinner, coater or spray method for 0.1 to 0.1
It is formed to a thickness of 5 μm. At this time, it is important to sufficiently fill the pinholes and the like.

For example, when a spinner was used, the resist was applied under the conditions of 500 rpm for 10 seconds and 2000 rpm for 20 seconds. Further, the applied organic resin was prebaked at 120 ° C. for 120 seconds. Further, as a developing step, ultraviolet light (wavelength 300 to 45
(0 nm) 316 to irradiate the photosensitive organic resin so that the organic resin filled in the pinholes is fixed and the organic resin on the interlayer insulator is not fixed. (FIG. 3 (E)) This condition is 20 mW / cm ² in this embodiment.
It was performed for a second, and then a developing process was performed.

After that, the whole of them was rinsed by a known method. Then, the non-fixed organic resin other than the fixed organic resin 318 could be dissolved in the pinhole 317. Further, post-baking was performed to chemically stabilize the organic resin 318 filled in the exposed pinhole. (FIG. 3F) Through the above steps, the organic resin insulator can be selectively filled only inside the pinholes existing inside the third insulating film 314.

Next, a black matrix 319 made of a titanium or chromium film having a thickness of 2000 Å was formed on the third insulating film 314 except the pixel portion by a sputtering method with a thickness of 2000 Å. According to this embodiment, since the pinholes of the third insulating film are filled with the organic resin, the black matrix formed of the titanium or chromium film formed on the third insulating film 314 and the pixel electrode are pinned. It was possible to solve the problem that the other pixel electrodes were connected to each other by connecting through the holes.

[Embodiment 4] This embodiment shows another manufacturing process of a pixel region of an active matrix type liquid crystal display device. FIG. 4 shows an example of this embodiment. In this embodiment, the pinholes of the second insulating film 212 are filled with an organic resin, and then the black matrix 216 is formed on the second insulating film.
The process up to the step of forming is shown according to the second embodiment, and the process of forming the third insulating film 114 on the black matrix shows the case according to the first embodiment.

In the figure, the drawings showing the steps (A) to (B) of Example 2 are omitted. According to this embodiment, it is possible to obtain the synergistic effect of the effect shown in the second embodiment and the effect shown in the first embodiment.

[0056]

The present invention has the first and fourth configurations,
In particular, the step of forming a positive photosensitive organic resin on the third insulating film, and the light irradiation from the photosensitive organic resin side, to the holes or pinholes formed in the third insulating film A step of fixing the organic resin, a step of removing the non-fixed organic resin formed on the third insulating film, and a step of forming a pixel electrode on the third insulating film. By adopting or by the display device manufactured by the method, the black matrix formed of the titanium or chromium film on the second interlayer insulator and the pixel electrode on the third insulating film form pinholes. It becomes possible to solve the problem that the other pixel electrodes are connected to each other by connecting them via the intermediary.

In addition, the second and fifth structures, in particular, after forming the second insulating film covering the electrodes and / or wirings connected to the source and drain regions, the positive type is formed on the second insulating film. Of the second interlayer insulating material by forming the photosensitive organic resin as described above and filling the holes or pinholes formed in the second insulating film with the organic resin, or by the display device manufactured by the method. Since the holes are filled with the organic resin, the black matrix formed of the titanium or chrome film formed on the second interlayer insulator and the pixel T are formed.
It is possible to solve the problem that the electrode of the FT is connected to the electrode of another pixel TFT by being connected to the electrode of the FT.

Further, in the third and sixth configurations, in particular, after the pixel electrode is formed on the second insulating film, the third insulating film is formed on the pixel electrode and the positive electrode is formed on the third insulating film. After forming a photosensitive organic resin of a mold or a display device manufactured by the method, the holes or pinholes formed in the third insulating film are filled with the organic resin, and then the third insulating film is formed. Since the black matrix is formed on the film, the black matrix made of the titanium or chromium film formed on the third insulating film is connected to the pixel electrode through the pinhole, so that the other pixel electrodes are connected to each other. It becomes possible to solve the problem of doing.

[Brief description of the drawings]

<Figure 1> The figure which shows the outline of the process which forms the liquid crystal display of this invention. <Figure 2> The figure which shows the outline of the process which forms the liquid crystal display of this invention. <Figure 3> The figure which shows the outline of the process which forms the liquid crystal display of this invention. <Figure 4> The figure which shows the outline of the process which forms the liquid crystal display of this invention.

[Explanation of symbols]

 101, 201, 301 Glass substrate 102, 202, 302 Oxide film 103, 203, 303 Active layer 104, 204, 304 Gate insulating film 105, 205, 305 Gate electrode 106, 206, 306 Aluminum oxide 107, 207, 307 N type Regions 108, 208, 308 N-type regions 109, 209, 309 First insulating films 110, 210, 310 Electrodes / wirings 111, 211, 311 Electrodes / wirings 112, 212, 312 Second insulating films 113, 216, 319 Black matrix 114, 217, 314 Third insulating film 115, 213, 315 Photosensitive organic resin 116, 214, 316 Ultraviolet light 117, 317 Pinhole 118, 215, 318 Organic resin 119, 218, 313 Pixel electrode

Claims (6)

[Claims] 1. A liquid crystal display device comprising: a thin film transistor on a substrate; a black matrix on the thin film transistor; an insulating film on the black matrix; and a pixel electrode on the insulating film. Alternatively, the pinhole is filled with an organic resin, which is a liquid crystal display device. 2. A liquid crystal display device comprising a thin film transistor on a substrate, an insulating film on the thin film transistor, and a black matrix on the insulating film, wherein holes or pinholes in the insulating film are filled with an organic resin. A liquid crystal display device characterized by being provided. 3. A liquid crystal display device comprising: a thin film transistor on a substrate; a pixel electrode on the thin film transistor; an insulating film on the pixel electrode; and a black matrix on the insulating film. Alternatively, the pinhole is filled with an organic resin, which is a liquid crystal display device. 4. A step of forming a first insulating film to cover the thin film transistor, a step of forming an opening in the first insulating film reaching the source and drain regions of the thin film transistor, and connecting to the source and drain regions. Electrode and /
Or a step of forming wiring, and electrodes and / or electrodes connected to the source and drain regions
Alternatively, a step of forming a second insulating film over the wiring, a step of forming a black matrix over the second insulating film, a step of forming a third insulating film over the black matrix, Forming a positive photosensitive organic resin on the third insulating film; and irradiating light from the photosensitive organic resin side to the organic resin in the holes or pinholes formed in the third insulating film. And a step of removing the non-fixed organic resin formed on the third insulating film, and a step of forming a pixel electrode on the third insulating film. A characteristic liquid crystal display device manufacturing method. 5. A step of forming a first insulating film over the thin film transistor, a step of forming an opening in the first insulating film reaching the source and drain regions of the thin film transistor, and connecting to the source and drain regions. Electrode and /
Or a step of forming wiring, and electrodes and / or electrodes connected to the source and drain regions
Alternatively, a step of forming a second insulating film so as to cover the wiring, a step of forming a positive photosensitive organic resin on the second insulating film, and light irradiation from the photosensitive organic resin side, Immobilizing the organic resin in the holes or pinholes formed in the second insulating film; removing the non-immobilized organic resin formed on the second insulating film; and the second Forming a black matrix on the insulating film, forming a third insulating film covering the black matrix, and forming a pixel electrode on the third insulating film. A characteristic liquid crystal display device manufacturing method. 6. A step of forming a first insulating film covering the thin film transistor, a step of forming an opening in the first insulating film reaching the source and drain regions of the thin film transistor, and connecting to the source and drain regions. Electrode and /
Or a step of forming wiring, and electrodes and / or electrodes connected to the source and drain regions
A step of forming a second insulating film over the wiring; a step of forming a pixel electrode on the second insulating film; a step of forming a third insulating film on the pixel electrode; 3. Forming a positive photosensitive organic resin on the insulating film, and irradiating light from the photosensitive organic resin side, and applying organic resin to the holes or pinholes formed in the third insulating film. A step of fixing, a step of removing the non-fixed organic resin formed on the third insulating film, and a step of forming a black matrix on the third insulating film. A method for manufacturing a liquid crystal display device.