JPH09110588A - Production of single crystal copper - Google Patents
Production of single crystal copperInfo
- Publication number
- JPH09110588A JPH09110588A JP29359195A JP29359195A JPH09110588A JP H09110588 A JPH09110588 A JP H09110588A JP 29359195 A JP29359195 A JP 29359195A JP 29359195 A JP29359195 A JP 29359195A JP H09110588 A JPH09110588 A JP H09110588A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- copper
- crucible
- melted
- crystal copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、金属の単結晶体を製造
する方法に関し、更に詳しくは特定条件下で所定時間加
熱保持することによって簡易な手段で単結晶銅を製造す
ることを目的とするものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a single crystal of metal, and more specifically, it aims to produce single crystal copper by a simple means by heating and holding under a specific condition for a predetermined time. To do.
【0002】[0002]
【従来の技術】従来、例えば銅のような金属の単結晶体
を製造する場合、通常、原料の表面に空気等によって酸
化物が発生することから、単結晶製造前に表面のエッチ
ング処理や、H2 、COガス等で還元処理することが必
要であった。2. Description of the Related Art Conventionally, when a single crystal of a metal such as copper is produced, an oxide is usually generated on the surface of a raw material by air or the like. It was necessary to carry out reduction treatment with H 2 , CO gas and the like.
【0003】更に縦型るつぼ等を用いて融解処理して単
結晶を製造する方法においては、原料を融解すると上部
に浮遊するカラミを除去する必要があり、この場合、カ
ラミが容器に付着する危険があるので、通常カラミを含
まない融液だけを別容器に移して結晶成長させるように
するため、融解処理の手間がかかる他、成長炉自体も複
雑な形状のものとなっていた。Further, in the method of producing a single crystal by melting using a vertical crucible or the like, it is necessary to remove the karami floating in the upper part when the raw material is melted. In this case, there is a risk that the karami will adhere to the container. Therefore, in order to transfer only the melt containing no kalami to another container for crystal growth, it takes time and labor for the melting process, and the growth furnace itself has a complicated shape.
【0004】[0004]
【発明が解決しようとする課題】上述のように従来法に
よる金属の単結晶体製造方法においては、特殊な装置を
用いることが多いことから、それに伴い製造コストが高
くつくという問題を有していた。そこで本発明は、従来
法に代って簡単な構造の装置を用いて単結晶体を製造で
きる新規な製造法を開発することを目的とするものであ
る。As described above, in the conventional method for producing a metal single crystal body, since a special apparatus is often used, there is a problem that the production cost becomes high accordingly. It was Therefore, an object of the present invention is to develop a new production method capable of producing a single crystal body by using an apparatus having a simple structure instead of the conventional method.
【0005】[0005]
【課題を解決するための手段】本発明者等は斯かる課題
を解決するために鋭意研究したところ、特殊素材のるつ
ぼを用いて特定条件下で融解処理することによって目的
とする単結晶銅を製造できることを見いだし本発明法を
提供することができた。[Means for Solving the Problems] The inventors of the present invention have conducted diligent research to solve such problems. As a result, the target single crystal copper is melted by melting under a specific condition using a crucible made of a special material. It has been found that it can be produced and the method of the present invention can be provided.
【0006】すなわち本発明は、原料としての高純度銅
をるつぼ内で融解した後、1150℃以上の温度で少な
くとも10分以上保持することによって銅酸化物を分解
せしめて単結晶化することを特徴とする単結晶銅の製造
方法であり、上記るつぼがグラファイトあるいはビトロ
カーボン(日本カーボン社製ガラス質カーボン材の商品
名)などの特殊カーボン材からなるものを使用すること
を特徴とするものである。That is, the present invention is characterized in that high-purity copper as a raw material is melted in a crucible and then held at a temperature of 1150 ° C. or higher for at least 10 minutes to decompose the copper oxide to form a single crystal. The method for producing single crystal copper is characterized in that the crucible is made of a special carbon material such as graphite or vitro carbon (trade name of vitreous carbon material manufactured by Nippon Carbon Co., Ltd.). .
【0007】[0007]
【作用】本発明法において使用する融解炉中のるつぼ
(2インチ内径)の材質として、グラファイトあるいは
ビトロカーボン材等の特殊カーボン材を使用できるが、
これらのるつぼを用いることによってるつぼ表面の炭素
によって材料中の銅の酸化物を還元除去することができ
る。銅酸化物の存在は多結晶化の原因となっているた
め、これを分解還元することによって単結晶化を容易に
することができる。グラファイトまたはビトロカーボン
等の特殊カーボン材の使用により、上記高温保持の際に
銅酸化物が好都合に分解できることが判明した。As a material of the crucible (2 inch inner diameter) in the melting furnace used in the method of the present invention, graphite or a special carbon material such as vitro carbon material can be used.
By using these crucibles, carbon on the surface of the crucible can reduce and remove oxides of copper in the material. Since the presence of copper oxide causes polycrystallization, decomposition and reduction of copper oxide can facilitate single crystallization. It has been found that the use of a special carbon material such as graphite or vitro carbon allows the copper oxide to be conveniently decomposed during the above high temperature holding.
【0008】上記特殊グラファイト製るつぼを用いて製
造する手段の一つは、該るつぼ底部に融解液を引き抜く
小孔を設け、引き下げシャフト内で水冷することによっ
て目的とする板状タイプの単結晶体を製造する引き抜き
法である。One of the means for manufacturing using the special graphite crucible is a plate-shaped single crystal body of interest which is provided with a small hole for drawing out the melt from the bottom of the crucible and water cooling in the pulling down shaft. Is a drawing method for producing.
【0009】他の手段は、上記特殊グラファイト製るつ
ぼをブリッジマン炉中に設置して融解処理したものを、
温度降下させながら直筒状タイプの単結晶体を製造する
フリッジマン炉法である。Another means is to install the above-mentioned special graphite crucible in a Bridgman furnace and melt it.
This is the Fridgeman furnace method for producing a straight-tube type single crystal while lowering the temperature.
【0010】以下、実施例をもとに本発明を詳細に説明
するが、本発明の範囲はこれらに限定されるものではな
い。Hereinafter, the present invention will be described in detail based on examples, but the scope of the present invention is not limited to these.
【0011】[0011]
【実施例1】図1に示す同和鉱業製銅引き抜き試験炉を
用い、まず6N(99.9999%)高純度銅2をビト
ロカーボン材からなる2インチ内径のるつぼ1中に装入
し、中央ヒーター3で1150℃まで加温して高純度銅
を融解し、5時間保持した。Example 1 Using the copper drawing test furnace manufactured by Dowa Mining Co., Ltd. shown in FIG. 1, 6N (99.9999%) high-purity copper 2 was first charged into a 2 inch inner diameter crucible 1 made of a vitro carbon material, The heater 3 was heated to 1150 ° C. to melt the high-purity copper and held for 5 hours.
【0012】その後、るつぼ底部に設けた厚み1mm×幅
10mmのスリット4から引き下げシャフト5を用いて6
0mm/hの速度で引き抜いたところ、1mm×10mm幅×1
00mmLの単結晶銅板を得ることができた。図1中の6
は断熱材、7はグラファイト材8は上部ヒーター、11
は駆動シャフトである。After that, a slit 4 having a thickness of 1 mm and a width of 10 mm provided at the bottom of the crucible is used to pull down 6 by using a pulling shaft 5.
When pulled out at a speed of 0 mm / h, 1 mm x 10 mm width x 1
A single crystal copper plate of 00 mmL could be obtained. 6 in FIG.
Is a heat insulating material, 7 is a graphite material, 8 is an upper heater, 11
Is the drive shaft.
【0013】[0013]
【実施例2】図2に示す同和鉱業製垂直ブリッジマン炉
を用い、先ず6N高純度銅2の1kg量を2インチ内径で
あるビトロカーボン製るつぼ1に装入し、中央ヒーター
3によって融解し、1250℃で1時間保持した後、原
料上部を1130℃、原料下部を1083℃(融点)と
なるように調整して、30mm/minの速度でるつぼを下げ
ながら内部を固化したところ、直筒長50mmの銅の単結
晶インゴットを得ることができた。図2中の9は下部ヒ
ーター、10は水冷シャフト、12は温度センサーをそ
れぞれ表わす。Example 2 Using a vertical Bridgman furnace manufactured by Dowa Mining Co., Ltd. shown in FIG. 2, 1 kg amount of 6N high-purity copper 2 was first charged into a 2 inch inner diameter Vitrocarbon crucible 1 and melted by a central heater 3. After holding at 1250 ° C for 1 hour, the upper part of the raw material was adjusted to 1130 ° C and the lower part of the raw material was adjusted to 1083 ° C (melting point), and the inside was solidified while lowering the crucible at a speed of 30 mm / min. A 50 mm copper single crystal ingot could be obtained. In FIG. 2, 9 is a lower heater, 10 is a water cooling shaft, and 12 is a temperature sensor.
【0014】[0014]
【比較例1】図1に示す引き抜き装置を用い、実施例1
に示すと同様に6N高純度銅を加熱融解した後、一定温
度で保持することなく直ちにるつぼ底部から引き抜いた
ところ大きさ1mm×10mm幅×100mmLの銅板を得た
が、これらは単結晶体ではなく多結晶体のままであっ
た。[Comparative Example 1] Example 1 was carried out using the drawing apparatus shown in FIG.
In the same manner as shown in 6), 6N high-purity copper was melted by heating and then immediately pulled out from the bottom of the crucible without holding it at a constant temperature to obtain a copper plate with a size of 1 mm × 10 mm width × 100 mmL. It remained as a polycrystalline body.
【0015】[0015]
【比較例2】図2に示す垂直ブリッジマン炉を用い、実
施例2に示すと同様に6N高純度銅を1250℃まで融
解した後、一定温度で保持することなく直ちに30mm/h
の引き下げ速度でるつぼを下げながら固化したところ直
筒長50mmの銅インゴットを得たが、該インゴットは多
結晶体であった。Comparative Example 2 Using the vertical Bridgman furnace shown in FIG. 2, 6N high-purity copper was melted up to 1250 ° C. in the same manner as in Example 2, and then immediately heated to 30 mm / h without holding at a constant temperature.
When the solidification was performed while lowering the crucible at the pulling speed of, a copper ingot having a straight tube length of 50 mm was obtained, and the ingot was a polycrystalline body.
【0016】[0016]
【発明の効果】上述のように本発明法においては、グラ
ファイトるつぼやビトロカーボン材るつぼ等の特殊カー
ボン材るつぼを用いて、特定条件下で融解処理を行うこ
とにより、従来法で必要としていた原料の表面処理工程
や、カラミの分離工程の操作が不必要であるため、簡単
な製造法により銅の単結晶が製造できるというメリット
がある。As described above, in the method of the present invention, a special carbon material crucible such as a graphite crucible or a vitro carbon material crucible is used to carry out a melting treatment under a specific condition to obtain a raw material required in the conventional method. Since the operation of the surface treatment step and the step of separating the kalami are unnecessary, there is an advantage that a single crystal of copper can be manufactured by a simple manufacturing method.
【図1】本発明実施例1に用いた引き抜き装置の構造を
示す概略図である。FIG. 1 is a schematic view showing the structure of a drawing device used in Example 1 of the present invention.
【図2】本発明実施例2に用いたブリッジマン炉の構造
を示す概略図である。FIG. 2 is a schematic diagram showing the structure of a Bridgman furnace used in Example 2 of the present invention.
1 グラファイト製るつぼ 2 高純度銅 3 中央ヒーター 4 スリット 5 引き下げシャフト 6 断熱材 7 グラファイト材 8 上部ヒーター 9 下部ヒーター 10 水冷シャフト 11 駆動シャフト 12 温度センサー 1 Graphite crucible 2 High-purity copper 3 Central heater 4 Slit 5 Pull down shaft 6 Insulation material 7 Graphite material 8 Upper heater 9 Lower heater 10 Water cooling shaft 11 Drive shaft 12 Temperature sensor
Claims (3)
ぼ内で融解した後、1150℃以上の温度で少なくとも
10分以上保持することによって銅酸化物を分解せしめ
て単結晶化することを特徴とする単結晶銅の製造方法。1. A high-purity copper of 4N or more as a raw material is melted in a crucible and then held at a temperature of 1150 ° C. or more for at least 10 minutes to decompose the copper oxide to form a single crystal. And a method for producing single crystal copper.
ーボン材からなることを特徴とする請求1記載の単結晶
銅の製造方法。2. The method for producing single crystal copper according to claim 1, wherein the crucible is made of graphite or a special carbon material.
ある請求2記載の単結晶銅の製造方法。3. The method for producing single crystal copper according to claim 2, wherein the special carbon material is vitro carbon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29359195A JP3719452B2 (en) | 1995-10-17 | 1995-10-17 | Method for producing single crystal copper |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29359195A JP3719452B2 (en) | 1995-10-17 | 1995-10-17 | Method for producing single crystal copper |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09110588A true JPH09110588A (en) | 1997-04-28 |
JP3719452B2 JP3719452B2 (en) | 2005-11-24 |
Family
ID=17796709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29359195A Expired - Fee Related JP3719452B2 (en) | 1995-10-17 | 1995-10-17 | Method for producing single crystal copper |
Country Status (1)
Country | Link |
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JP (1) | JP3719452B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5875006A (en) * | 1991-03-19 | 1999-02-23 | Hitachi, Ltd. | Method for projecting image obtained by using liquid crystal panels and display apparatus for realizing the same |
CN115198357A (en) * | 2022-07-19 | 2022-10-18 | 河南国玺超纯新材料股份有限公司 | Preparation method of single crystal copper |
-
1995
- 1995-10-17 JP JP29359195A patent/JP3719452B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5875006A (en) * | 1991-03-19 | 1999-02-23 | Hitachi, Ltd. | Method for projecting image obtained by using liquid crystal panels and display apparatus for realizing the same |
CN115198357A (en) * | 2022-07-19 | 2022-10-18 | 河南国玺超纯新材料股份有限公司 | Preparation method of single crystal copper |
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Publication number | Publication date |
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JP3719452B2 (en) | 2005-11-24 |
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