JP3719452B2 - Method for producing single crystal copper - Google Patents

Method for producing single crystal copper Download PDF

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Publication number
JP3719452B2
JP3719452B2 JP29359195A JP29359195A JP3719452B2 JP 3719452 B2 JP3719452 B2 JP 3719452B2 JP 29359195 A JP29359195 A JP 29359195A JP 29359195 A JP29359195 A JP 29359195A JP 3719452 B2 JP3719452 B2 JP 3719452B2
Authority
JP
Japan
Prior art keywords
single crystal
copper
crucible
graphite
crystal copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP29359195A
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Japanese (ja)
Other versions
JPH09110588A (en
Inventor
達也 恩田
喬 尾上
武晴 山村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Holdings Co Ltd
Original Assignee
Dowa Holdings Co Ltd
Dowa Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dowa Holdings Co Ltd, Dowa Mining Co Ltd filed Critical Dowa Holdings Co Ltd
Priority to JP29359195A priority Critical patent/JP3719452B2/en
Publication of JPH09110588A publication Critical patent/JPH09110588A/en
Application granted granted Critical
Publication of JP3719452B2 publication Critical patent/JP3719452B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【0001】
【産業上の利用分野】
本発明は、金属の単結晶体を製造する方法に関し、更に詳しくは特定条件下で所定時間加熱保持することによって簡易な手段で単結晶銅を製造することを目的とするものである。
【0002】
【従来の技術】
従来、例えば銅のような金属の単結晶体を製造する場合、通常、原料の表面に空気等によって酸化物が発生することから、単結晶製造前に表面のエッチング処理や、H2 、COガス等で還元処理することが必要であった。
【0003】
更に縦型るつぼ等を用いて融解処理して単結晶を製造する方法においては、原料を融解すると上部に浮遊するカラミを除去する必要があり、この場合、カラミが容器に付着する危険があるので、通常カラミを含まない融液だけを別容器に移して結晶成長させるようにするため、融解処理の手間がかかる他、成長炉自体も複雑な形状のものとなっていた。
【0004】
【発明が解決しようとする課題】
上述のように従来法による金属の単結晶体製造方法においては、特殊な装置を用いることが多いことから、それに伴い製造コストが高くつくという問題を有していた。そこで本発明は、従来法に代って簡単な構造の装置を用いて単結晶体を製造できる新規な製造法を開発することを目的とするものである。
【0005】
【課題を解決するための手段】
本発明者等は斯かる課題を解決するために鋭意研究したところ、特殊素材のるつぼを用いて特定条件下で融解処理することによって目的とする単結晶銅を製造できることを見いだし本発明法を提供することができた。
【0006】
すなわち本発明は、原料としての6Nの高純度銅をグラファイトまたはガラス質カーボン材からなり底部にスリットが設けられたるつぼ内で融解した後、1150℃以上の温度で少なくとも10分以上保持することによって銅酸化物を分解せしめ前記スリットから引き下げシャフトを用いて融解液を引き抜いて水冷することによって単結晶銅板を得ることを特徴とする単結晶銅の製造方法である。
【0007】
【作用】
本発明法において使用する融解炉中のるつぼ(2インチ内径)の材質として、グラファイトあるいはビトロカーボン材等の特殊カーボン材を使用できるが、これらのるつぼを用いることによってるつぼ表面の炭素によって材料中の銅の酸化物を還元除去することができる。銅酸化物の存在は多結晶化の原因となっているため、これを分解還元することによって単結晶化を容易にすることができる。グラファイトまたはビトロカーボン等の特殊カーボン材の使用により、上記高温保持の際に銅酸化物が好都合に分解できることが判明した。
【0008】
上記特殊グラファイト製るつぼを用いて製造する手段の一つは、該るつぼ底部に融解液を引き抜く小孔を設け、引き下げシャフト内で水冷することによって目的とする板状タイプの単結晶体を製造する引き抜き法である。
【0009】
他の手段は、上記特殊グラファイト製るつぼをブリッジマン炉中に設置して融解処理したものを、温度降下させながら直筒状タイプの単結晶体を製造するフリッジマン炉法である。
【0010】
以下、実施例をもとに本発明を詳細に説明するが、本発明の範囲はこれらに限定されるものではない。
【0011】
【実施例1】
図1に示す同和鉱業製銅引き抜き試験炉を用い、まず6N(99.9999%)高純度銅2をビトロカーボン材からなる2インチ内径のるつぼ1中に装入し、中央ヒーター3で1150℃まで加温して高純度銅を融解し、5時間保持した。
【0012】
その後、るつぼ底部に設けた厚み1mm×幅10mmのスリット4から引き下げシャフト5を用いて60mm/hの速度で引き抜いたところ、1mm×10mm幅×100mmLの単結晶銅板を得ることができた。図1中の6は断熱材、7はグラファイト材8は上部ヒーター、11は駆動シャフトである。
【0013】
【参考例1】
図2に示す同和鉱業製垂直ブリッジマン炉を用い、先ず6N高純度銅2の1kg量を2インチ内径であるビトロカーボン製るつぼ1に装入し、中央ヒーター3によって融解し、1250℃で1時間保持した後、原料上部を1130℃、原料下部を1083℃(融点)となるように調整して、30mm/minの速度でるつぼを下げながら内部を固化したところ、直筒長50mmの銅の単結晶インゴットを得ることができた。図2の9は下部ヒーター、10は水冷シャフト、12は温度センサーをそれぞれ表わす。
【0014】
【比較例1】
図1に示す引き抜き装置を用い、実施例1に示すと同様に6N高純度銅を加熱融解した後、一定温度で保持することなく直ちにるつぼ底部から引き抜いたところ大きさ1mm×10mm幅×100mmLの銅板を得たが、これらは単結晶体ではなく多結晶体のままであった。
【0015】
【比較例2】
図2に示す垂直ブリッジマン炉を用い、参考例1に示すと同様に6N高純度銅を1250℃まで融解した後、一定時間で保持することなく直ちに30mm/hの引き下げ速度でるつぼを下げながら固化したところ直筒長50mmの銅インゴットを得たが、該インゴットは多結晶体であった。
【0016】
【発明の効果】
上述のように本発明法においては、グラファイトるつぼやビトロカーボン材るつぼ等の特殊カーボン材るつぼを用いて、特定条件下で融解処理を行うことにより、従来法で必要としていた原料の表面処理工程や、カラミの分離工程の操作が不必要であるため、簡単な製造法により銅の単結晶が製造できるというメリットがある。
【図面の簡単な説明】
【図1】 本発明実施例1に用いた引き抜き装置の構造を示す概略図である。
【図2】 参考例1に用いたブリッジマン炉の構造を示す概略図である。
【符号の説明】
1 グラファイト製るつぼ
2 高純度銅
3 中央ヒーター
4 スリット
5 引き下げシャフト
6 断熱材
7 グラファイト材
8 上部ヒーター
9 下部ヒーター
10 水冷シャフト
11 駆動シャフト
12 温度センサー
[0001]
[Industrial application fields]
The present invention relates to a method for producing a single crystal of metal, and more specifically, an object of the present invention is to produce single crystal copper by a simple means by heating and holding for a predetermined time under specific conditions.
[0002]
[Prior art]
Conventionally, when producing a single crystal of a metal such as copper, for example, an oxide is usually generated on the surface of the raw material by air or the like. Therefore, etching of the surface or H 2 , CO gas before the single crystal is produced. It was necessary to perform a reduction treatment with the above.
[0003]
Furthermore, in the method of producing a single crystal by melting treatment using a vertical crucible or the like, it is necessary to remove the calami floating above when the raw material is melted. In this case, there is a risk that the calami adheres to the container. Usually, only the melt containing no calami is transferred to a separate container for crystal growth, so that it takes time for the melting process and the growth furnace itself has a complicated shape.
[0004]
[Problems to be solved by the invention]
As described above, in the conventional method for producing a metal single crystal, a special apparatus is often used, which has a problem in that the production cost increases. Accordingly, an object of the present invention is to develop a novel manufacturing method capable of manufacturing a single crystal using an apparatus having a simple structure instead of the conventional method.
[0005]
[Means for Solving the Problems]
The present inventors have intensively studied to solve such a problem, and found that the target single crystal copper can be produced by melting under a specific condition using a special material crucible and provides the method of the present invention. We were able to.
[0006]
That is, the present invention melts 6N high-purity copper as a raw material in a crucible made of graphite or a glassy carbon material and provided with a slit at the bottom, and then holds it at a temperature of 1150 ° C. or higher for at least 10 minutes or more. A method for producing single crystal copper, comprising obtaining a single crystal copper plate by decomposing copper oxide, drawing the melt from the slit using a shaft, and cooling with water.
[0007]
[Action]
As a material for the crucible (2 inch inner diameter) in the melting furnace used in the method of the present invention, a special carbon material such as graphite or a vitrocarbon material can be used. By using these crucibles, carbon in the surface of the crucible is contained in the material. Copper oxide can be removed by reduction. Since the presence of copper oxide causes polycrystallization, single crystallization can be facilitated by decomposing and reducing it. It has been found that the use of a special carbon material such as graphite or vitrocarbon can advantageously decompose the copper oxide during the high temperature holding.
[0008]
One of the means for producing using the above-mentioned special graphite crucible is to produce a target plate-shaped single crystal by providing a small hole for extracting the melt at the bottom of the crucible and cooling with water in the pulling shaft. It is a drawing method.
[0009]
Another means is the Friedman method for manufacturing a straight cylindrical type single crystal while lowering the temperature of the above-mentioned special graphite crucible placed in a Bridgeman furnace and melted.
[0010]
EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example, the scope of the present invention is not limited to these.
[0011]
[Example 1]
First, 6N (99.9999%) high-purity copper 2 was first charged into a crucible 1 having a 2-inch inner diameter made of a vitro carbon material, and 1150 ° C. at a central heater 3 using the Dowa Mining copper pull-out test furnace shown in FIG. Until high purity copper was melted and held for 5 hours.
[0012]
Then, when it pulled out at a speed | rate of 60 mm / h using the pulling-down shaft 5 from the slit 4 of thickness 1mm x width 10mm provided in the crucible bottom part, the single crystal copper plate of 1mm x 10mm width x 100mmL was able to be obtained. In FIG. 1, 6 is a heat insulating material, 7 is a graphite material 8 is an upper heater, and 11 is a drive shaft.
[0013]
[Reference Example 1]
First, 1 kg of 6N high-purity copper 2 was charged into a vitrocarbon crucible 1 having a 2-inch inner diameter, melted by a central heater 3, and heated at 1250 ° C. After maintaining the time, the upper part of the raw material was adjusted to 1130 ° C. and the lower part of the raw material was adjusted to 1083 ° C. (melting point), and the inside was solidified while lowering the crucible at a speed of 30 mm / min. A crystalline ingot could be obtained. In FIG. 2, 9 represents a lower heater, 10 represents a water cooling shaft, and 12 represents a temperature sensor.
[0014]
[Comparative Example 1]
Using the drawing device shown in FIG. 1, 6N high-purity copper was heated and melted as shown in Example 1, and then immediately pulled out from the crucible bottom without being held at a constant temperature. Copper plates were obtained, but these remained polycrystalline rather than single crystalline.
[0015]
[Comparative Example 2]
Using the vertical Bridgman furnace shown in FIG. 2, after melting 6N high-purity copper to 1250 ° C. as shown in Reference Example 1 , immediately lowering the crucible at a pull-down rate of 30 mm / h without holding it for a certain period of time. When solidified, a copper ingot having a straight cylinder length of 50 mm was obtained, but the ingot was a polycrystal.
[0016]
【The invention's effect】
As described above, in the method of the present invention, by using a special carbon material crucible such as a graphite crucible or a vitro carbon material crucible, by performing a melting treatment under specific conditions, the surface treatment step of the raw material required in the conventional method or Since the operation of the separation process of calami is unnecessary, there is an advantage that a single crystal of copper can be manufactured by a simple manufacturing method.
[Brief description of the drawings]
FIG. 1 is a schematic view showing the structure of a drawing device used in Example 1 of the present invention.
2 is a schematic view showing the structure of a Bridgman furnace used in Reference Example 1. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Graphite crucible 2 High purity copper 3 Central heater 4 Slit 5 Pull-down shaft 6 Heat insulating material 7 Graphite material 8 Upper heater 9 Lower heater 10 Water-cooled shaft 11 Drive shaft 12 Temperature sensor

Claims (1)

原料としての6Nの高純度銅をグラファイトまたはガラス質カーボン材からなり底部にスリットが設けられたるつぼ内で融解した後、1150℃以上の温度で少なくとも10分以上保持することによって銅酸化物を分解せしめ前記スリットから引き下げシャフトを用いて融解液を引き抜いて水冷することによって単結晶銅板を得ることを特徴とする単結晶銅の製造方法。 6N high-purity copper as a raw material is melted in a crucible made of graphite or glassy carbon and provided with a slit at the bottom, and then kept at a temperature of 1150 ° C. or higher for at least 10 minutes to decompose copper oxide A method for producing single crystal copper, comprising: obtaining a single crystal copper plate by drawing out the melt from the slit using a pulling shaft and cooling with water.
JP29359195A 1995-10-17 1995-10-17 Method for producing single crystal copper Expired - Fee Related JP3719452B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29359195A JP3719452B2 (en) 1995-10-17 1995-10-17 Method for producing single crystal copper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29359195A JP3719452B2 (en) 1995-10-17 1995-10-17 Method for producing single crystal copper

Publications (2)

Publication Number Publication Date
JPH09110588A JPH09110588A (en) 1997-04-28
JP3719452B2 true JP3719452B2 (en) 2005-11-24

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Country Status (1)

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69231597T2 (en) * 1991-03-19 2001-05-31 Hitachi, Ltd. Liquid crystal display device
CN115198357A (en) * 2022-07-19 2022-10-18 河南国玺超纯新材料股份有限公司 Preparation method of single crystal copper

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