JPH09106075A - Substrate exposure device - Google Patents
Substrate exposure deviceInfo
- Publication number
- JPH09106075A JPH09106075A JP28681495A JP28681495A JPH09106075A JP H09106075 A JPH09106075 A JP H09106075A JP 28681495 A JP28681495 A JP 28681495A JP 28681495 A JP28681495 A JP 28681495A JP H09106075 A JPH09106075 A JP H09106075A
- Authority
- JP
- Japan
- Prior art keywords
- film thickness
- substrate
- exposure
- exposure amount
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体ウエハ、
液晶表示装置（ＬＣＤ）用或いはフォトマスク用のガラ
ス基板、光ディスク用基板等の基板の表面に形成された
感光性樹脂膜（レジスト膜）を露光する基板の露光装置
に関する。[0001] The present invention relates to a semiconductor wafer,
The present invention relates to a substrate exposure apparatus that exposes a photosensitive resin film (resist film) formed on the surface of a substrate such as a glass substrate for a liquid crystal display (LCD) or a photomask, a substrate for an optical disk, and the like.
【０００２】[0002]
【従来の技術】フォトリソグラフィを利用して半導体装
置やＬＣＤなどを製造する場合において、半導体ウエハ
やガラス基板等の基板の表面に形成されたレジスト膜を
所望のパターンに露光する場合、従来の露光装置におい
ては、レジスト膜の目標とする膜厚に対して最適な露光
量を設定するようにしていた。そして、一度露光量の設
定を行なうと、目標とする膜厚が変わるまで、露光量を
固定したままで順次各基板の露光処理を行なうようにし
ていた。2. Description of the Related Art In the case of manufacturing a semiconductor device, an LCD or the like by utilizing photolithography, when exposing a resist film formed on the surface of a substrate such as a semiconductor wafer or a glass substrate into a desired pattern, a conventional exposure method is used. In the apparatus, the optimum exposure amount was set for the target film thickness of the resist film. Then, once the exposure amount is set, each substrate is sequentially exposed while the exposure amount is fixed until the target film thickness is changed.
【０００３】[0003]
【発明が解決しようとする課題】ところが、基板の表面
に形成されたレジスト膜の厚みは、各基板間において必
ずしも一定にはならず、また、１枚の基板についてみて
も面内の各位置間で差を生じることがある。However, the thickness of the resist film formed on the surface of the substrate is not always constant between the substrates, and even when viewed as one substrate, the thickness between the positions in the plane is not uniform. May make a difference.
【０００４】ここで、光反射率の高い基板の表面に所望
のパターンのレジスト膜を形成する場合において、単色
光を用いて露光を行なうようにすると、レジスト膜への
入射光と基板表面からの反射光とが干渉し合い、図３に
示すように、レジスト膜の厚み方向に露光密度の周期的
な強弱が現れる。レジスト膜を露光し現像した際のレジ
スト膜面のパターンの線幅は、露光量が変わると変化す
るが、露光量を一定にしたとしても、前記した通りレジ
スト膜の厚み方向に露光密度の周期的な強弱が現れるた
め、レジスト膜厚が変化すると、図４の曲線ａのよう
に、線幅が周期的に変化することとなる。このため、従
来の露光装置では、露光量を固定しているので、各基板
間において或いは１枚の基板面内の位置によってレジス
ト膜の厚みに差があると、露光後現像処理したときに均
一な線幅が得られない、といった問題点があった。Here, when a resist film having a desired pattern is formed on the surface of a substrate having a high light reflectance, if exposure is performed using monochromatic light, the incident light to the resist film and the light from the substrate surface are The reflected lights interfere with each other, and as shown in FIG. 3, a periodic intensity of the exposure density appears in the thickness direction of the resist film. The line width of the pattern on the resist film surface when the resist film is exposed and developed changes when the exposure amount changes, but even if the exposure amount is constant, as described above, the cycle of the exposure density in the thickness direction of the resist film. As the resist film thickness changes, the line width changes periodically as indicated by the curve a in FIG. Therefore, in the conventional exposure apparatus, since the exposure amount is fixed, if there is a difference in the thickness of the resist film between the substrates or the position in the surface of one substrate, it is uniform when the post-exposure development processing is performed. There was a problem that a wide line width could not be obtained.
【０００５】この発明は、以上のような事情に鑑みてな
されたものであり、半導体装置やＬＣＤなどを製造する
場合のフォトリソグラフィ工程において、塗布処理後の
各基板間において或いは１枚の基板における面内の各位
置間でレジスト膜の厚みに差があったとしても、露光後
現像処理された各基板に均一なレジストパターンが形成
されるように露光する基板の露光装置を提供することを
目的とする。The present invention has been made in view of the above circumstances, and in a photolithography process in the case of manufacturing a semiconductor device, an LCD or the like, between substrates after coating treatment or in one substrate. An object of the present invention is to provide a substrate exposure apparatus that performs exposure so that a uniform resist pattern is formed on each substrate that has been subjected to development processing after exposure, even if there is a difference in the thickness of the resist film between each position in the plane. And
【０００６】[0006]
【課題を解決するための手段】請求項１に係る発明は、
従来の基板の露光装置の構成に、基板の表面に形成され
た感光性樹脂膜の厚みを測定する膜厚測定手段と、基板
の表面に形成された感光性樹脂膜の厚みと露光手段の適
正露光量との相関関係を示すデータを記憶しておくデー
タ記憶手段と、前記膜厚測定手段の膜厚測定結果に基づ
いて前記データ記憶手段に記憶されたデータより露光手
段の適正露光量を算出する演算手段と、この演算手段に
よって算出された適正露光量で露光を行なうように露光
手段を制御する制御手段とを付加したことを特徴とす
る。The invention according to claim 1 is
In the structure of the conventional substrate exposure apparatus, the film thickness measuring means for measuring the thickness of the photosensitive resin film formed on the surface of the substrate, the thickness of the photosensitive resin film formed on the surface of the substrate, and the appropriateness of the exposing means. Data storage means for storing data showing a correlation with the exposure amount, and an appropriate exposure amount of the exposure means is calculated from the data stored in the data storage means based on the film thickness measurement result of the film thickness measurement means. And a control means for controlling the exposure means so that the exposure is performed with the proper exposure amount calculated by the calculation means.
【０００７】また、請求項２に係る発明は、請求項１に
係る発明の露光装置にさらに、膜厚測定手段によって測
定された膜厚が所定範囲内であるか否かを判別し、膜厚
が所定範囲外であるときに警報信号を出力する膜厚異常
判別手段と、この膜厚異常判別手段からの警報信号を受
けて警報を発する警報手段とを備えたことを特徴とす
る。According to the invention of claim 2, in addition to the exposure apparatus of the invention of claim 1, it is further determined whether or not the film thickness measured by the film thickness measuring means is within a predetermined range. Is provided outside the predetermined range, the film thickness abnormality determining means for outputting an alarm signal, and the alarm means for receiving an alarm signal from the film thickness abnormality determining means to issue an alarm.
【０００８】[0008]
【作用】請求項１に係る発明の露光装置では、露光を行
なう前に或いは場合によっては露光しながら、基板の表
面に形成された感光性樹脂膜の厚みが膜厚測定手段によ
って測定され、演算手段において、膜厚測定結果に基づ
いてデータ記憶手段に記憶されたデータより露光手段の
適正露光量が算出される。すなわち、データ記憶手段に
は、基板表面に形成された感光性樹脂膜の厚み（レジス
ト膜厚）と露光手段の適正露光量との相関関係を示す図
２のようなデータが記憶されており、そのデータを使用
し、膜厚測定手段によって測定されたレジスト膜厚に対
応する適正露光量が、レジスト膜厚がｔ1であれば適正
露光量はＳ1でありレジスト膜厚がｔ2であれば適正露光
量はＳ2である、というように演算手段において算出さ
れる。そして、制御手段によって露光手段が制御される
ことにより、演算手段によって算出された適正露光量で
露光が行なわれる。この結果、レジスト膜厚の変動によ
る影響が相殺されて、図４の直線ｂのようにレジスト膜
面のパターンの線幅が一定となり、露光後に現像処理さ
れた各基板には、均一なレジストパターンが形成される
こととなる。In the exposure apparatus according to the first aspect of the present invention, the thickness of the photosensitive resin film formed on the surface of the substrate is measured by the film thickness measuring means before the exposure or while the exposure is performed in some cases, and the calculation is performed. In the means, the appropriate exposure amount of the exposure means is calculated from the data stored in the data storage means based on the film thickness measurement result. That is, the data storage means stores data as shown in FIG. 2 showing the correlation between the thickness of the photosensitive resin film (resist film thickness) formed on the surface of the substrate and the appropriate exposure amount of the exposure means. Using the data, if the proper exposure amount corresponding to the resist film thickness measured by the film thickness measuring means is the resist film thickness t 1 , the proper exposure amount is S 1 and the resist film thickness is t 2 . if proper exposure amount is calculated in the calculation means so that it is S 2,. Then, the exposure means is controlled by the control means, so that the exposure is performed with the proper exposure amount calculated by the calculation means. As a result, the influence of the variation in the resist film thickness is canceled out, and the line width of the pattern on the resist film surface becomes constant as shown by the straight line b in FIG. 4, and a uniform resist pattern is formed on each substrate developed after exposure. Will be formed.
【０００９】また、請求項２に係る発明の露光装置で
は、膜厚異常判別手段において、膜厚測定手段によって
測定された膜厚が所定範囲内であるか否かが判別され、
膜厚が所定範囲外であるときには膜厚異常判別手段から
警報信号が出力される。そして、その警報信号を警報手
段が受けて、警報手段から警報が発せられ、作業者に膜
厚異常が知らされる。In the exposure apparatus according to the second aspect of the invention, the film thickness abnormality determining means determines whether or not the film thickness measured by the film thickness measuring means is within a predetermined range.
When the film thickness is outside the predetermined range, the film thickness abnormality determining means outputs an alarm signal. Then, the alarm signal is received by the alarm means, and an alarm is issued from the alarm means to notify the operator of the film thickness abnormality.
【００１０】[0010]
【発明の実施の形態】以下、この発明の最良の実施形態
について図面を参照しながら説明する。Preferred embodiments of the present invention will be described below with reference to the drawings.
【００１１】図１は、この発明の１実施例を示し、基板
の露光装置の概略構成を示す模式図である。この露光装
置には、投影レンズ１０に、基板Ｗの表面に形成された
レジスト膜Ｒの厚みを測定する膜厚測定ユニット１２が
付設されている。膜厚測定ユニット１２は、ＣＰＵ１４
に接続されており、ＣＰＵ１４からの指示信号によって
膜厚測定を行ない、また、膜厚測定結果をＣＰＵ１４へ
送る。FIG. 1 shows a first embodiment of the present invention and is a schematic view showing a schematic structure of a substrate exposure apparatus. In this exposure apparatus, a film thickness measuring unit 12 for measuring the thickness of the resist film R formed on the surface of the substrate W is attached to the projection lens 10. The film thickness measurement unit 12 has a CPU 14
Is connected to the CPU 14, and the film thickness is measured by an instruction signal from the CPU 14, and the film thickness measurement result is sent to the CPU 14.
【００１２】ＣＰＵ１４へは予め入力装置１６により、
ロット毎、基板毎或いはショット（面内位置）毎に決め
られた膜厚測定の頻度が入力されており、露光前にＣＰ
Ｕ１４から膜厚測定ユニット１２へ測定の指示信号が随
時出力されるようになっている。また、予め入力装置１
６によりＣＰＵ１４へ、基板Ｗの表面に形成されたレジ
スト膜Ｒの厚みと投影レンズ１０の適正露光量との相関
関係を示す、図２に示すようなデータが入力され、その
データがメモリ１８に記憶されている。レジスト膜厚と
適正露光量との相関関係を示すデータは、レジストの種
類や基板の種類（基板の反射率）毎に、また、プロセス
の種類毎に、前もって実験的に求めておくようにする。
さらに、予め入力装置１６によりＣＰＵ１４へ、正常な
レジスト膜厚の範囲を示すデータが入力されている。そ
して、ＣＰＵ１４には、警報器２０が接続されており、
ランプ点灯、ブサー音などにより、レジスト膜の厚みに
異常があったときにそれを作業者に知らせるようになっ
ている。尚、膜厚測定ユニット１２の取付け位置は、図
示例のように投影レンズ１０の側方にする必要は無く、
露光装置の基板ステージを利用して膜厚測定ユニット１
２を取り付けるようにすればよい。The input device 16 is used in advance for the CPU 14.
The frequency of film thickness measurement, which is determined for each lot, each substrate, or each shot (in-plane position), is input.
A measurement instruction signal is output from U14 to the film thickness measurement unit 12 at any time. In addition, the input device 1 in advance
The CPU 6 inputs data as shown in FIG. 2 showing the correlation between the thickness of the resist film R formed on the surface of the substrate W and the proper exposure amount of the projection lens 10 to the CPU 14, and the data is stored in the memory 18. Remembered Data indicating the correlation between the resist film thickness and the proper exposure amount should be experimentally obtained in advance for each resist type, substrate type (substrate reflectance), and for each process type. .
Further, data indicating a normal range of resist film thickness is previously input to the CPU 14 by the input device 16. An alarm device 20 is connected to the CPU 14,
When the thickness of the resist film is abnormal, the operator is notified of it by lighting a lamp or a buzzer sound. It should be noted that the mounting position of the film thickness measuring unit 12 does not need to be on the side of the projection lens 10 as in the illustrated example.
Film thickness measurement unit 1 using the substrate stage of the exposure system
2 should be attached.
【００１３】上記した構成の露光装置を使用して、基板
Ｗの表面に塗布形成されたレジスト膜Ｒを露光するに
は、まず、露光を行なう前に、ＣＰＵ１４からの指令信
号によって膜厚測定ユニット１２が駆動させられる。そ
して、膜厚測定ユニット１２によって基板Ｗ上のレジス
ト膜Ｒの厚みが測定され、その測定結果に応じた信号が
膜厚測定ユニット１２からＣＰＵ１４へ送られる。膜厚
測定結果の信号がＣＰＵ１４へ入力されると、ＣＰＵ１
４において、最初に、膜厚測定ユニット１２によって測
定された膜厚が正常な範囲内であるか否かが判別され
る。この判別の結果、膜厚が正常な範囲を外れていると
きは、ＣＰＵ１４から警報器２０へ警報信号が送られ、
警報器２０によって膜厚異常を知らせるランプ点灯やブ
ザー音などの警報が作業者に対して発せられる。一方、
膜厚測定ユニット１２によって測定された膜厚が正常な
範囲内であるときは、メモリ１８からレジスト膜厚と適
正露光量との相関関係を示す図２のようなデータが読み
出され、そのデータより測定膜厚に対応する適正露光量
が算出される。適正露光量が算出されると、ＣＰＵ１４
から投影レンズ１０の駆動部へ適正露光量に応じた制御
信号が送られ、投影レンズ１０が駆動されて適正露光量
による露光が行なわれる。そして、この露光後に現像処
理された基板には、均一なレジストパターンが形成され
ることとなる。尚、場合によっては、露光を行ないなが
ら膜厚測定ユニット１２を駆動させてレジスト膜厚みを
測定し、その測定結果に基づいて投影レンズ１０を制御
するようにしてもよい。In order to expose the resist film R applied and formed on the surface of the substrate W using the exposure apparatus having the above-described structure, first, before performing the exposure, the film thickness measuring unit is instructed by a command signal from the CPU 14. 12 is driven. Then, the film thickness measuring unit 12 measures the thickness of the resist film R on the substrate W, and a signal corresponding to the measurement result is sent from the film thickness measuring unit 12 to the CPU 14. When the signal of the film thickness measurement result is input to the CPU 14, the CPU 1
At 4, it is first determined whether the film thickness measured by the film thickness measuring unit 12 is within the normal range. If the result of this determination is that the film thickness is outside the normal range, an alarm signal is sent from the CPU 14 to the alarm device 20,
The alarm device 20 gives an alarm to the operator such as lighting of a lamp or a buzzer sound to notify the abnormal film thickness. on the other hand,
When the film thickness measured by the film thickness measuring unit 12 is within the normal range, the data shown in FIG. 2 showing the correlation between the resist film thickness and the proper exposure amount is read from the memory 18, and the data is read. Thus, the proper exposure amount corresponding to the measured film thickness is calculated. When the proper exposure amount is calculated, the CPU 14
A control signal corresponding to the appropriate exposure amount is sent from the projector to the drive unit of the projection lens 10, and the projection lens 10 is driven to perform the exposure with the appropriate exposure amount. Then, a uniform resist pattern is formed on the substrate that has been developed after this exposure. In some cases, the film thickness measuring unit 12 may be driven while performing the exposure to measure the resist film thickness, and the projection lens 10 may be controlled based on the measurement result.
【００１４】[0014]
【発明の効果】半導体装置やＬＣＤなどを製造する場合
のフォトリソグラフィ工程において、請求項１に係る発
明の露光装置を使用して塗布処理後の基板の露光を行な
うようにしたときは、各基板間において或いは１枚の基
板における面内の各位置間で基板表面の感光性樹脂膜の
厚みに差があったとしても、その感光性樹脂膜厚の変動
による影響が相殺されて、露光後現像処理された各基板
に均一なレジストパターンが形成されることとなり、歩
留まりが向上する。In the photolithography process for manufacturing a semiconductor device, LCD or the like, when the substrate after coating is exposed using the exposure apparatus according to the first aspect of the invention, each substrate is exposed. Even if there is a difference in the thickness of the photosensitive resin film on the substrate surface between different positions or between in-plane positions on one substrate, the influence of the fluctuation of the photosensitive resin film thickness is canceled out, and post-exposure development is performed. A uniform resist pattern is formed on each processed substrate, and the yield is improved.
【００１５】また、請求項２に係る発明の露光装置で
は、測定された感光性樹脂膜の厚みに異常があったとき
は、その膜厚異常が直ちに作業者に知らされることにな
るので、作業者はその時点で露光作業を中止することが
できるとともに、前段の塗布処理工程において不都合な
事態が起こったことを認知することができる。このた
め、不必要な作業に無駄な時間を費やさなくて済むとと
もに、多数のロット不良が生じるのを未然に防止するこ
とができる。In the exposure apparatus according to the second aspect of the present invention, when the measured thickness of the photosensitive resin film is abnormal, the operator is immediately notified of the abnormal film thickness. The operator can stop the exposure operation at that time, and can recognize that an inconvenient situation has occurred in the coating process in the first stage. Therefore, it is possible to prevent unnecessary time from being wasted on unnecessary work, and it is possible to prevent a large number of lot defects from occurring.
【図１】この発明の１実施例に係る基板の露光装置の概
略構成を示す模式図である。FIG. 1 is a schematic diagram showing a schematic configuration of a substrate exposure apparatus according to an embodiment of the present invention.
【図２】基板の表面に形成された感光性樹脂膜の厚み
（レジスト膜厚）と適正露光量との相関関係を示す線図
である。FIG. 2 is a diagram showing a correlation between the thickness of a photosensitive resin film (resist film thickness) formed on the surface of a substrate and an appropriate exposure amount.
【図３】レジスト膜の厚み方向における露光密度の周期
的な強弱について説明するための線図である。FIG. 3 is a diagram for explaining the periodic intensity of exposure density in the thickness direction of a resist film.
【図４】露光量を一定にしたときのレジスト膜厚とパタ
ーンの線幅との関係（曲線ａ）、並びに、レジスト膜厚
に対応して露光量を変化させ適正露光量で露光を行なっ
たときのレジスト膜厚とパターンの線幅との関係（曲線
ｂ）を示す線図である。FIG. 4 shows the relationship between the resist film thickness and the line width of the pattern when the exposure amount is constant (curve a), and the exposure amount is changed in accordance with the resist film thickness to perform exposure with an appropriate exposure amount. It is a diagram which shows the relationship (curve b) between the resist film thickness at this time, and the line width of a pattern.
１０ 投影レンズ １２ 膜厚測定ユニット １４ ＣＰＵ １６ 入力装置 １８ メモリ ２０ 警報器 10 Projection Lens 12 Film Thickness Measurement Unit 14 CPU 16 Input Device 18 Memory 20 Alarm Device
Claims (2)
所望のパターンに露光する露光手段を備えた基板の露光
装置において、 基板の表面に形成された感光性樹脂膜の厚みを測定する
膜厚測定手段と、 基板の表面に形成された感光性樹脂膜の厚みと前記露光
手段の適正露光量との相関関係を示すデータを記憶して
おくデータ記憶手段と、 前記膜厚測定手段の膜厚測定結果に基づいて前記データ
記憶手段に記憶されたデータより前記露光手段の適正露
光量を算出する演算手段と、 この演算手段によって算出された適正露光量で露光を行
なうように前記露光手段を制御する制御手段とを設けた
ことを特徴とする基板の露光装置。1. An exposure apparatus for a substrate, comprising an exposure means for exposing a photosensitive resin film formed on a surface of a substrate to a desired pattern, wherein the thickness of the photosensitive resin film formed on the surface of the substrate is measured. A film thickness measuring means, a data storage means for storing data showing a correlation between the thickness of the photosensitive resin film formed on the surface of the substrate and an appropriate exposure amount of the exposing means; Calculating means for calculating the proper exposure amount of the exposing means from the data stored in the data storing means based on the film thickness measurement result; and the exposing means for performing the exposure with the proper exposure amount calculated by the calculating means. An exposure apparatus for a substrate, which is provided with a control means for controlling.
所定範囲内であるか否かを判別し、膜厚が所定範囲外で
あるときに警報信号を出力する膜厚異常判別手段、並び
に、この膜厚異常判別手段からの警報信号を受けて警報
を発する警報手段を備えた請求項１記載の基板の露光装
置。2. A film thickness abnormality determining means for determining whether the film thickness measured by the film thickness measuring means is within a predetermined range and outputting an alarm signal when the film thickness is outside the predetermined range, and 2. The substrate exposure apparatus according to claim 1, further comprising alarm means for receiving an alarm signal from the film thickness abnormality determining means and issuing an alarm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28681495A JPH09106075A (en) | 1995-10-06 | 1995-10-06 | Substrate exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28681495A JPH09106075A (en) | 1995-10-06 | 1995-10-06 | Substrate exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09106075A true JPH09106075A (en) | 1997-04-22 |
Family
ID=17709396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28681495A Pending JPH09106075A (en) | 1995-10-06 | 1995-10-06 | Substrate exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09106075A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020064453A (en) * | 2001-02-01 | 2002-08-09 | 삼성전자 주식회사 | Exposure system of semiconducter, and exposure method of semiconducter thereof |
| JP2007163632A (en) * | 2005-12-12 | 2007-06-28 | Hitachi Displays Ltd | Method for manufacturing display device, display device and exposure apparatus |
| US7423723B2 (en) * | 2002-07-01 | 2008-09-09 | Obayashiseikou Co., Ltd. | Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device |
| JP2009290210A (en) * | 2008-05-30 | 2009-12-10 | Asml Netherlands Bv | Method of determining defects in substrate and apparatus for exposing substrate in lithographic process |
| WO2024199972A1 (en) * | 2023-03-30 | 2024-10-03 | Carl Zeiss Smt Gmbh | Method and system for irradiating a lithographic object |
-
1995
- 1995-10-06 JP JP28681495A patent/JPH09106075A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020064453A (en) * | 2001-02-01 | 2002-08-09 | 삼성전자 주식회사 | Exposure system of semiconducter, and exposure method of semiconducter thereof |
| US7423723B2 (en) * | 2002-07-01 | 2008-09-09 | Obayashiseikou Co., Ltd. | Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device |
| JP2007163632A (en) * | 2005-12-12 | 2007-06-28 | Hitachi Displays Ltd | Method for manufacturing display device, display device and exposure apparatus |
| JP2009290210A (en) * | 2008-05-30 | 2009-12-10 | Asml Netherlands Bv | Method of determining defects in substrate and apparatus for exposing substrate in lithographic process |
| US8345231B2 (en) | 2008-05-30 | 2013-01-01 | Asml Netherlands B.V. | Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process |
| WO2024199972A1 (en) * | 2023-03-30 | 2024-10-03 | Carl Zeiss Smt Gmbh | Method and system for irradiating a lithographic object |
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