KR20020064453A - Exposure system of semiconducter, and exposure method of semiconducter thereof - Google Patents

Exposure system of semiconducter, and exposure method of semiconducter thereof Download PDF

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Publication number
KR20020064453A
KR20020064453A KR1020010004909A KR20010004909A KR20020064453A KR 20020064453 A KR20020064453 A KR 20020064453A KR 1020010004909 A KR1020010004909 A KR 1020010004909A KR 20010004909 A KR20010004909 A KR 20010004909A KR 20020064453 A KR20020064453 A KR 20020064453A
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South Korea
Prior art keywords
wafer
exposure
flatness
data
exposure system
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KR1020010004909A
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Korean (ko)
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박성현
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삼성전자 주식회사
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Priority to KR1020010004909A priority Critical patent/KR20020064453A/en
Publication of KR20020064453A publication Critical patent/KR20020064453A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling

Abstract

PURPOSE: A semiconductor exposure system is provided to effectively perform wafer focusing and leveling by separating the wafer focusing and leveling from a wafer exposure. CONSTITUTION: A semiconductor exposure system(100) comprises a loader part, a pre-align part(130), an exposure part(150), an unloader part, a transfer part including a transfer arm for transferring a wafer to a defined portion and a driving part for supporting the semiconductor exposure system(100) driving. The pre-align part(130) further includes a focusing leveling part(132) and a wafer align part(138). The exposure part(150) further includes a correction part(154) and an exposure apparatus(156). At this point, a data line(10) and a control line(30) are respectively connected with the pre-align part(130) and the exposure part(150).

Description

반도체 노광시스템 및 이를 이용한 반도체 노광방법{Exposure system of semiconducter, and exposure method of semiconducter thereof}Semiconductor exposure system and semiconductor exposure method using same {Exposure system of semiconducter, and exposure method of semiconducter

본 발명은 반도체 노광시스템 및 이를 이용한 노광방법에 관한 것으로, 더욱 상세하게는 반도체 제조공정 중 노광공정에서 보다 효과적으로 웨이퍼를 포커싱(Focusing) 및 레벨링(Leveling)할 수 있도록 한 반도체 노광시스템 및 이를 이용한 노광방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor exposure system and an exposure method using the same, and more particularly, to a semiconductor exposure system and an exposure using the same, which enable focusing and leveling of wafers more effectively in an exposure process during a semiconductor manufacturing process. It is about a method.

일반적으로 하나의 완전한 반도체 소자를 제작하기 위해서는 순수 실리콘 웨이퍼(Silicon wafer)를 가공 및 연마한 후, 그 실리콘 웨이퍼 상에 사진공정, 식각공정, 박막증착공정, 확산공정 등 여러가지 공정을 반복하여 소정 회로패턴(Pattern)을 갖는 박막을 복층으로 적층함으로써 제작된다.In general, in order to manufacture a single semiconductor device, a pure silicon wafer is processed and polished, and then a predetermined circuit is repeated by repeating various processes such as a photo process, an etching process, a thin film deposition process, and a diffusion process on the silicon wafer. It is produced by laminating a thin film having a pattern in multiple layers.

이와 같은 공정 중에서 미리 설계된 회로패턴을 실리콘 웨이퍼 상에 찍는 공정을 사진공정이라고 하며, 이와 같은 사진공정은 크게 감광막 도포공정, 노광공정, 현상공정으로 이루어진다.Among these processes, a process of taking a predesigned circuit pattern on a silicon wafer is called a photo process, and such a photo process is largely made of a photoresist coating process, an exposure process, and a developing process.

이때, 노광공정은 광학계(일명, 축소투영렌즈)를 이용하여 레티클(Reticle)에 형성된 회로패턴을 감광막이 도포된 웨이퍼에 광학적으로 축소하여 전사시키는 공정으로, 노광시 광학계를 통하여 웨이퍼의 감광막에 투사된 노광빔의 포커싱(Focusing) 상태는 웨이퍼 상에 매우 정교한 회로를 가공함에 있어서 그 가공의 정확성에 커다란 영향을 미친다.In this case, the exposure process is a process of optically reducing and transferring the circuit pattern formed on the reticle to the photosensitive film-coated wafer by using an optical system (aka, a reduced projection lens), and projecting the photosensitive film of the wafer through the optical system during exposure. The focusing state of the exposed exposure beam has a great influence on the accuracy of the processing in processing very sophisticated circuits on the wafer.

특히, 노광빔이 웨이퍼의 노광할 면과 정확히 직교되지 않거나 노광빔의 포커스가 웨이퍼의 노광할 면에 정확히 맞추어지지 않을 경우, 웨이퍼의 감광막에 가공된 회로패턴의 수직성이 보장되지 않을뿐만 아니라 그로 인하여 후속되는 식각공정에서 심각한 불량발생을 초래할 수 있고, 또 패터닝(Patterning) 불량에 의해 반도체 소자의 생산이 불가능할 수도 있다.In particular, when the exposure beam is not exactly orthogonal to the surface to be exposed on the wafer or the focus of the exposure beam is not exactly on the surface to be exposed on the wafer, not only the verticality of the processed circuit pattern on the photosensitive film of the wafer is guaranteed, This may cause serious defects in the subsequent etching process, and it may be impossible to produce a semiconductor device due to patterning defects.

따라서, 노광시에는 레티클의 회로패턴을 웨이퍼에 정확히 전사시키는 것이 무엇보다 중요하며, 이를 구현하기 위해서 종래 노광 시스템에는 노광을 수행하는 노광장치에 포커싱 레벨링(Focusing leveling)장치 및 보정장치가 구비된다.Therefore, during the exposure, it is important to accurately transfer the circuit pattern of the reticle onto the wafer. To realize this, the conventional exposure system includes a focusing leveling device and a correction device in the exposure device that performs the exposure.

이와 같은 종래 포커싱 레벨링장치 및 보정장치는 노광시스템(Exposure system)에서 노광장치가 광학계를 통하여 웨이퍼의 감광막에 노광빔(Beam)을 투사시킬 때, 웨이퍼의 감광막 즉, 웨이퍼의 노광되는 전영역을 센싱하여 웨이퍼의 플래트니스(Flatness) 정도를 측정하고, 액튜에이터(Actuater) 등을 이용하여 웨이퍼를 상하방향으로 이동시키거나 경사진 부분을 평평하게 보정하여 노광빔이 웨이퍼 상에 정확히 직교되고 또, 정확한 포커스(Focus)가 맞추어 지도록 한다.Such a conventional focusing leveling device and a correction device sense an entire exposure area of a wafer, that is, an entire area of the wafer, when the exposure apparatus projects an exposure beam to the photosensitive film of the wafer through an optical system in an exposure system. To measure the flatness of the wafer and move the wafer up and down using an actuator or the like to flatten the inclined portion so that the exposure beam is exactly orthogonal to the wafer and accurate focus. Make sure (Focus) is set.

그러나, 종래 노광 설비는 노광 장치가 웨이퍼의 감광막을 노광할 때, 실시간(Real time)으로 웨이퍼의 노광되는 전영역을 센싱(Sensing)하여 플래트니스 정도를 측정하고, 이 플래트니스의 정도에 따라 웨이퍼를 소정 높이와 소정 기울기만큼 보정한 다음 노광을 실시하기 때문에 웨이퍼를 노광하는데 걸리는 시간이 장시간 소요될 뿐만 아니라 노광시스템의 정보처리 속도상 노광되는 웨이퍼의 전영역을 리드센싱(Read sensing)한 데이타(Data)를 전부 사용하지 못하고 특정 센서군에 의존하여 포커싱을 하게 된다. 따라서, 웨이퍼 노광에 따른 CD 일률(Critical dimension uniformity)향상을 기대할 수 없다.However, in the conventional exposure apparatus, when the exposure apparatus exposes the photosensitive film of the wafer, the entire area exposed to the wafer is sensed in real time to measure the degree of flatness, and according to the degree of the flatness, Since the exposure is corrected by the predetermined height and the predetermined inclination and the exposure is performed, the time required for the exposure of the wafer is not only long but also the read sensing data of the entire area of the exposed wafer due to the information processing speed of the exposure system. ) Can't use all of them and focus on specific sensor group. Therefore, it is not possible to expect an improvement in CD uniform dimension due to wafer exposure.

따라서, 본 발명은 이와 같은 문제점을 감안한 것으로써, 본 발명의 목적은 웨이퍼 노광과 웨이퍼 포커싱 및 레벨링을 이원화하여 보다 효과적으로 웨이퍼를 포커싱 및 레벨링할 수 있도록 함에 있다.Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to dualize wafer exposure and wafer focusing and leveling so that the wafer can be focused and leveled more effectively.

도 1은 본 발명에 따른 노광시스템의 일실시예를 도시한 블럭도.1 is a block diagram illustrating one embodiment of an exposure system according to the present invention;

도 2는 본 발명에 따른 노광방법의 순서도.2 is a flow chart of an exposure method according to the present invention.

이와 같은 본 발명의 목적을 구현하기 위한 노광시스템은 광학계를 이용하여 레티클에 형성된 회로패턴을 감광막이 도포된 웨이퍼에 광학적으로 축소하여 전사시키는 노광공정에 있어서,In the exposure system for realizing the object of the present invention in the exposure step of optically reducing the circuit pattern formed on the reticle by using an optical system to the photosensitive film coated wafer,

웨이퍼를 스캔하여 웨이퍼의 플래트니스 데이타를 측정하고 산출하는 포커싱 레벨링 장치와, 웨이퍼의 플래트니스 데이타를 저장하는 저장 유닛과, 저장유닛에 저장된 플래트니스 데이타를 불러들여 웨이퍼와 플래트니스 데이타를 매칭시키고 웨이퍼의 포커스와 레벨을 보정하는 보정장치와, 보정장치에 의해 플래트니스가 보정된 웨이퍼를 노광하는 노광장치를 포함함에 있다.A focusing leveling device that scans a wafer to measure and calculate the flatness data of the wafer, a storage unit for storing the flatness data of the wafer, and retrieves the flatness data stored in the storage unit to match the wafer and the flatness data, And a compensator for correcting the focus and level of the light, and an exposure apparatus for exposing the wafer whose flatness has been corrected by the compensator.

이때, 노광시스템에는 웨이퍼를 입체 화상으로 출력시키는 디스플레이 유닛을 포함하는 것이 바람직하다.At this time, the exposure system preferably includes a display unit for outputting the wafer as a three-dimensional image.

이와 같은 본 발명의 목적을 구현하기 위한 반도체 노광방법은 광학계를 이용하여 레티클에 형성된 회로패턴을 감광막이 도포된 웨이퍼에 광학적으로 축소하여 전사시키는 노광공정에 있어서,In the semiconductor exposure method for realizing the object of the present invention in the exposure step of optically shrinking and transferring the circuit pattern formed on the reticle to the photosensitive film-coated wafer using an optical system,

웨이퍼를 스캔하여 웨이퍼의 플래트니스를 측정하고 웨이퍼의 플래트니스 데이타를 산출하는 단계와, 웨이퍼의 플래트니스 데이타를 순차적으로 저장하는 단계와, 순차적으로 저장된 플래트니스 데이타를 불러들여 플래트니스 데이타와 웨이퍼를 매칭시켜 웨이퍼의 포커스와 레벨을 보정하는 단계와, 웨이퍼의 보정이 끝난 후 웨이퍼를 노광하는 단계를 포함함에 있다.Scanning the wafer to measure the flatness of the wafer and calculating the flatness data of the wafer; and sequentially storing the flatness data of the wafer; Matching and correcting the focus and level of the wafer; and exposing the wafer after the wafer is corrected.

이하, 도 1과 도 2를 참조하여 본 발명 반도체 노광시스템 및 이를 이용한 반도체 노광방법에 대해서 구체적으로 설명하면 다음과 같다.Hereinafter, a semiconductor exposure system of the present invention and a semiconductor exposure method using the same will be described in detail with reference to FIGS. 1 and 2.

도 1은 본 발명에 따른 노광시스템(100)의 일실시예를 도시한 블럭도로 본 발명의 일실시예인 반도체 노광시스템(100)은 전체적으로 보아 로더부(Loader part,110), 프리 얼라인부(Pre-align part,130), 노광부(150), 언로더부(Unloader part,170) 및 웨이퍼(미도시)를 소정위치로 이송하여 주는 이송암(Arm,미도시)을 포함하는 이송장치(미도시)와 노광시스템(100)의 원활한 구동을 써포트(Support)하는 구동장치로 구성된다.1 is a block diagram illustrating an embodiment of an exposure system 100 according to the present invention. The semiconductor exposure system 100, which is an embodiment of the present invention, generally has a loader part 110 and a pre-aligned part. a transfer device (not shown) including an alignment part 130, an exposure part 150, an unloader part 170, and a transfer arm for transferring a wafer (not shown) to a predetermined position. And a driving device supporting smooth driving of the exposure system 100.

이때, 본 발명에 따른 노광시스템(100)에서 프리 얼라인부(130)에는 노광을보조해주는 포커싱 레벨링 장치(132) 및 웨이퍼 정렬장치(138)가 설치되며, 노광부(150)에는 보정장치(154) 및 노광장치(156)가 설치되고, 각 장치는 각각 데이타가 입출력되는 데이타 라인(Data line,10)과 제어 신호가 입출력되는 컨트롤 라인(Control line,30)이 연결된다. 여기에서, 각 장치를 연결해주는 데이타 라인(10)과 컨트롤 라인(30)은 입출력되는 정보가 빠르게 이동할 수 있도록 광케이블로 설치됨이 바람직하다.At this time, in the exposure system 100 according to the present invention, the prealignment unit 130 is provided with a focusing leveling device 132 and a wafer alignment device 138 for assisting exposure, and the correction unit 154 in the exposure unit 150. ) And an exposure apparatus 156, each of which is connected to a data line (Data line, 10) for data input and output and a control line (Control line, 30) for input and output control signals. Here, the data line 10 and the control line 30 connecting each device are preferably installed with an optical cable so that information input and output can be quickly moved.

보다 구체적으로 설명하면, 프리 얼라인부(130)에 위치한 웨이퍼 정렬장치(138)는 웨이퍼의 플랫존(Flat zone,미도시)을 확인한 후 웨이퍼를 얼라인(Align)시키는 역할을 하며, 포커싱 레벨링 장치(132)는 웨이퍼의 노광되는 전영역의 플래트니스를 측정하는 역할을 한다.More specifically, the wafer alignment device 138 located in the pre-alignment unit 130 serves to align the wafer after checking the flat zone (not shown) of the wafer, and focusing leveling device. 132 serves to measure the flatness of the entire exposed area of the wafer.

또한, 노광부(150)에 위치한 노광장치(156)는 광학계(미도시)를 이용하여 웨이퍼에 노광빔을 투사시키는 역할을 하며, 보정장치(154)는 웨이퍼의 노광되는 영역의 플래티너스를 보정하여 웨이퍼가 정확히 노광되도록 하는 역할을 한다.In addition, the exposure apparatus 156 positioned in the exposure unit 150 serves to project the exposure beam onto the wafer using an optical system (not shown), and the correction apparatus 154 corrects the platinum in the exposed area of the wafer. To accurately expose the wafer.

한편, 구동장치는 웨이퍼의 플래트니스 데이타를 저장하는 저장 유닛(195)과, 웨이퍼의 플래트니스 정도를 화상으로 출력해주는 디스플레이 유닛(Display unit,197)과, 웨이퍼가 노광되도록 전반적인 사항을 제어하는 중앙처리유닛(193)으로 구성된다.On the other hand, the driving device includes a storage unit 195 for storing the flatness data of the wafer, a display unit 197 for outputting the flatness level of the wafer as an image, and a central control unit for controlling the overall matter so that the wafer is exposed. It consists of a processing unit 193.

이때, 디스플레이 유닛(197)은 웨이퍼의 플래트니스 정도를 유저(User)가 확인하기 용이하도록 입체 화상으로 출력함이 바람직하다.In this case, the display unit 197 preferably outputs the flatness of the wafer in a stereoscopic image so that the user can easily check the flatness of the wafer.

이하, 도 2를 참조하여, 이와 같이 구성된 본 발명의 일실시예인 노광시스템의 작동 및 노광방법에 대해서 구체적으로 설명하면 다음과 같다.Hereinafter, an operation and an exposure method of an exposure system, which is an embodiment of the present invention configured as described above, will be described in detail with reference to FIG. 2.

선행 공정을 종료한 웨이퍼가 노광을 위해 본 발명 노광시스템(100)의 로더부(110)에 로딩되면(S1), 이송장치는 웨이퍼를 프리 얼라인부(130)로 이송한다.When the wafer having finished the preceding process is loaded into the loader unit 110 of the exposure system 100 of the present invention for exposure (S1), the transfer device transfers the wafer to the prealignment unit 130.

이후, 프리 얼라인부(130)에 위치한 웨이퍼 정렬 장치(138)는 이송된 웨이퍼의 플랫존을 확인한 다음, 웨이퍼를 얼라인 시킨다(S2). 이때, 포커싱 레벨링 장치(132)는 웨이퍼의 노광될 전 영역을 스캔(Scan)하여 웨이퍼의 플래트니스를 정밀하게 측정한 다음(S3), 웨이퍼의 플래트니스 데이타를 각 웨이퍼에 따라 고유번호를 붙여 구동장치의 저장유닛에 저장시킨다(S4).Subsequently, the wafer alignment device 138 located in the pre-alignment unit 130 checks the flat zone of the transferred wafer, and then aligns the wafer (S2). At this time, the focusing leveling device 132 scans the entire area of the wafer to be exposed to precisely measure the flatness of the wafer (S3), and then drives the flatness data of the wafer with a unique number according to each wafer. It is stored in the storage unit of the device (S4).

이후, 웨이퍼의 얼라인 및 웨이퍼의 플래트니스 측정이 완료되면, 웨이퍼는 이송장치에 의해 노광부로 이송된다.Then, when the alignment of the wafer and the flatness measurement of the wafer are completed, the wafer is transferred to the exposure unit by the transfer device.

이때, 노광부(150)로 웨이퍼가 이송되면, 노광부(150)에 위치한 보정장치(154)는 이송된 웨이퍼의 플래트니스 데이타를 저장유닛(195)에서 불러들여 이송된 웨이퍼와 불러온 플래트니스 데이타를 서로 매칭(Matching)시킨 후 정확하게 노광되도록 웨이퍼의 포커스 및 레벨 즉, 웨이퍼의 플래트니스를 보정한다(S5). 그리고, 보정장치(154)의 플래트니스 보정이 완료되면, 노광장치(156)는 웨이퍼를 노광한다(S6).At this time, when the wafer is transferred to the exposure unit 150, the compensation device 154 located in the exposure unit 150 loads the flat data of the transferred wafer from the storage unit 195, and the transferred wafer and the loaded flatness. After the data are matched with each other, the focus and level of the wafer, that is, the flatness of the wafer, are corrected to accurately expose the wafers (S5). When the flatness correction of the correction device 154 is completed, the exposure device 156 exposes the wafer (S6).

이후에 웨이퍼의 노광이 완료되면, 웨이퍼는 이송장치에 의해 언로더부(170)로 이송되며(S7), 이로써 웨이퍼의 노광이 완료된다.After the exposure of the wafer is completed, the wafer is transferred to the unloader unit 170 by the transfer device (S7), thereby completing the exposure of the wafer.

이와 같이, 본 발명에 따르면, 프리 얼라인부(130)에서 웨이퍼의 플래트니스를 측정하고 데이타를 저장하며, 노광부(150)에서 웨이퍼의 측정된 데이타 값에 따라 웨이퍼를 보정하고 노광하기 때문에 종래보다 빠르게 노광공정을 진행할 수 있고, 웨이퍼의 리드센싱한 데이타를 모두 이용할 수 있기 때문에 설비의 효율을 높일 수 있을 뿐만아니라 CD 일률이 향상된다.As described above, according to the present invention, the flat alignment unit 130 measures the flatness of the wafer and stores data, and the exposure unit 150 corrects and exposes the wafer according to the measured data value of the wafer. Since the exposure process can be performed quickly and all the read-sensed data of the wafer can be used, the efficiency of the equipment can be increased and the CD power can be improved.

이상에서 설명한 바와 같이, 본 발명에 따르면, 프리 얼라인부에서 먼저 웨이퍼를 스캔하여 플래트니스 데이타를 저장 유닛에 저장하고, 노광부에서 기 측정한 웨이퍼의 플래트니스 데이타를 불러들여 웨이퍼와 기 측정한 플래트니스 데이타를 매칭시킨 후, 이에 따라 웨이퍼의 포커스 및 레벨을 보정하여 노광을 실시하기 때문에 종래 보다 빠른 속도로 웨이퍼를 노광할 수 있고, 또 웨이퍼의 노광되는 전영역을 센싱한 데이터를 모두 이용할 수 있기 때문에 설비의 효율을 높일 수 있으며, 따라서 CD 일률이 향상되는 효과가 있다As described above, according to the present invention, the wafer is first scanned by the pre-alignment unit, the flat data is stored in the storage unit, the flatness data of the wafer previously measured by the exposure unit is loaded, and the wafer and the measured plate are previously measured. After the varnish data is matched, the wafer is exposed by correcting the focus and level of the wafer accordingly, so that the wafer can be exposed at a faster speed than before, and the data which senses the entire exposed area of the wafer can be used. Therefore, the efficiency of the installation can be increased, and thus the CD power efficiency is improved.

Claims (3)

광학계를 이용하여 레티클에 형성된 회로패턴을 감광막이 도포된 웨이퍼에 광학적으로 축소하여 전사시키는 노광공정에 있어서,In the exposure step of optically shrinking and transferring the circuit pattern formed on the reticle to the photosensitive film-coated wafer using an optical system, 상기 웨이퍼를 스캔하여, 상기 웨이퍼의 플래트니스 데이타를 측정하고 산출하는 포커싱 레벨링 장치와;A focusing leveling device that scans the wafer to measure and calculate flatness data of the wafer; 상기 웨이퍼의 상기 플래트니스 데이타를 저장하는 저장 유닛과;A storage unit for storing the flatness data of the wafer; 상기 저장유닛에 저장된 상기 플래트니스 데이타를 불러들여 상기 웨이퍼와 상기 플래트니스 데이타를 매칭시킨 후, 상기 웨이퍼의 포커스와 레벨을 보정하는 보정장치와;A correction device for importing the flat data stored in the storage unit to match the wafer and the flat data, and correcting the focus and level of the wafer; 상기 보정장치에 의해 플래트니스가 보정된 상기 웨이퍼를 노광하는 노광장치를 포함하는 것을 특징으로 하는 반도체 노광시스템.And an exposure apparatus for exposing the wafer whose flatness has been corrected by the correction apparatus. 제 1항에 있어서, 상기 노광시스템에는 상기 웨이퍼를 입체 화상으로 출력시키는 디스플레이 유닛을 포함하는 것을 특징으로 하는 반도체 노광시스템.The semiconductor exposure system according to claim 1, wherein the exposure system includes a display unit for outputting the wafer in a stereoscopic image. 광학계를 이용하여 레티클에 형성된 회로패턴을 감광막이 도포된 웨이퍼에 광학적으로 축소하여 전사시키는 노광공정에 있어서,In the exposure step of optically shrinking and transferring the circuit pattern formed on the reticle to the photosensitive film-coated wafer using an optical system, 상기 웨이퍼를 스캔하여 상기 웨이퍼의 플래트니스를 측정하고 상기 웨이퍼의 플래트니스 데이타를 산출하는 단계와;Scanning the wafer to measure the flatness of the wafer and to calculate the flatness data of the wafer; 상기 웨이퍼의 상기 플래트니스 데이타를 순차적으로 저장하는 단계와;Sequentially storing the flatness data of the wafer; 순차적으로 저장된 상기 플래트니스 데이타를 불러들여 상기 플래트니스 데이타와 상기 웨이퍼를 매칭시켜 상기 웨이퍼의 포커스와 레벨을 보정하는 단계와;Importing the sequentially stored flatness data to match the flatness data with the wafer to correct focus and level of the wafer; 상기 웨이퍼의 보정이 끝난 후, 상기 웨이퍼를 노광하는 단계를 포함하는 것을 특징으로 하는 반도체 노광방법.And after the calibration of the wafer is finished, exposing the wafer.
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