JPH0896964A - Organic electroluminescent element - Google Patents
Organic electroluminescent elementInfo
- Publication number
- JPH0896964A JPH0896964A JP6232853A JP23285394A JPH0896964A JP H0896964 A JPH0896964 A JP H0896964A JP 6232853 A JP6232853 A JP 6232853A JP 23285394 A JP23285394 A JP 23285394A JP H0896964 A JPH0896964 A JP H0896964A
- Authority
- JP
- Japan
- Prior art keywords
- transporting layer
- layer
- light emitting
- organic
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005401 electroluminescence Methods 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 3
- 229920001296 polysiloxane Polymers 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000000126 substance Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は有機エレクトロルミネセ
ンス（ＥＬ）素子に係り、特にＭｇＡｇ電極を使用する
ことなく構成することにより、その寿命を長くした有機
ＥＬ素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence (EL) element, and more particularly to an organic EL element having a long life by being constructed without using a MgAg electrode.
【０００２】[0002]
【従来の技術】有機ＥＬ素子は、薄形の新しい発光源と
して注目されている。従来の有機ＥＬ素子は、図４に示
す如く、ガラス基板１０の上にＩＴＯからなる透明電極
５を形成し、この上に正孔注入輸送層４、発光層３、電
子注入輸送層２、陰極７等により構成されている。2. Description of the Related Art Organic EL devices have been attracting attention as new thin light emitting sources. In a conventional organic EL device, as shown in FIG. 4, a transparent electrode 5 made of ITO is formed on a glass substrate 10, and a hole injecting and transporting layer 4, a light emitting layer 3, an electron injecting and transporting layer 2, a cathode are formed on the transparent electrode 5. It is composed of 7 etc.
【０００３】電子注入輸送層２としては、例えばトリス
（８−キノリノラト）アルミニウムが使用される。発光
層３としては、後述する正孔注入輸送層４で使用される
化１で示すテトラアリールジアミン誘導体と、前記電子
注入輸送層２で使用されるトリス（８−キノリノラト）
アルミニウム等の混合されたものが使用される。As the electron injecting and transporting layer 2, for example, tris (8-quinolinolato) aluminum is used. As the light emitting layer 3, a tetraaryldiamine derivative represented by Chemical formula 1 used in the hole injecting and transporting layer 4 described later and tris (8-quinolinolato) used in the electron injecting and transporting layer 2 are used.
A mixed material such as aluminum is used.
【０００４】正孔注入輸送層４としては、例えば下記化
１で表されるテトラアリールジアミン誘導体を使用す
る。As the hole injecting and transporting layer 4, for example, a tetraaryldiamine derivative represented by the following chemical formula 1 is used.
【０００５】[0005]
【化１】 [Chemical 1]
【０００６】〔化１において、Ｒ1 、Ｒ2 、Ｒ3 及びＲ
4 はそれぞれアリール基、アルキル基、アルコキシ基、
アリールオキシ基、アミノ基又はハロゲン原子を表す。
ｒ１、ｒ２、ｒ３及びｒ４は、それぞれ０又は１〜５の
整数である。Ｒ5 及びＲ6 は、アルキル基、アルコキシ
基、アミノ基又はハロゲン原子を表し、これらは同一で
も異なる物であってもよい。ｒ５及びｒ６は、それぞれ
０又は１〜４の整数である。〕 透明電極５は陽極として作用するものであり、例えばＩ
ＴＯで構成される。[In Chemical Formula 1, R 1 , R 2 , R 3 and R
4 is an aryl group, an alkyl group, an alkoxy group,
It represents an aryloxy group, an amino group or a halogen atom.
r1, r2, r3 and r4 are each 0 or an integer of 1 to 5. R 5 and R 6 represent an alkyl group, an alkoxy group, an amino group or a halogen atom, which may be the same or different. r5 and r6 are 0 or an integer of 1 to 4, respectively. The transparent electrode 5 acts as an anode, for example, I
Composed of TO.
【０００７】陰極７は、ＭｇＡｇ（例えば重量比１０：
１）を使用する。The cathode 7 is made of MgAg (for example, a weight ratio of 10:
Use 1).
【０００８】[0008]
【発明が解決しようとする課題】ところで、前記の如く
構成された有機ＥＬ素子は、最初は強く発光している
が、時間が経過するにつれて発光強度が急速に減少する
という欠点がある。By the way, the organic EL device constructed as described above emits intense light at first, but has a drawback that the emission intensity rapidly decreases as time passes.
【０００９】本発明者はこの問題を改善すべく研究した
ところ、これが陰極の構成材料にＭｇが存在するために
非常に酸化し易いことにもとづくことが解明された。従
って本発明の目的は、発光強度を長時間持続させるため
に、陰極にＭｇが含有されないものを使用した有機ＥＬ
素子を提供することである。The present inventor has conducted research to improve this problem, and has found that this is based on the fact that it is very easily oxidized due to the presence of Mg in the constituent material of the cathode. Therefore, an object of the present invention is to use an organic EL in which the cathode does not contain Mg in order to maintain the emission intensity for a long time.
It is to provide an element.
【００１０】[0010]
【課題を解決するための手段】前記目的を達成するた
め、本発明では、図１に示す如く、陰極としてｎ型シリ
コン層１−０を使用する。To achieve the above object, the present invention uses an n-type silicon layer 1-0 as a cathode as shown in FIG.
【００１１】[0011]
【作用】シリコンは酸化しにくいので、有機ＥＬ素子の
発光強度を長く持続できる有機ＥＬ素子を提供すること
ができる。Since silicon is difficult to oxidize, it is possible to provide an organic EL element capable of sustaining the emission intensity of the organic EL element for a long time.
【００１２】[0012]
【実施例】本発明の一実施例を図１及び図２に基づき説
明する。図１は本発明の一実施例構成図、図２はその特
性図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a configuration diagram of an embodiment of the present invention, and FIG. 2 is a characteristic diagram thereof.
【００１３】図１において、１はシリコン基板、２は電
子注入輸送層、３は発光層、４は正孔注入輸送層、５は
透明電極である。シリコン基板１は陰極として動作する
ｎ型シリコン層１−０を有するものである。シリコン基
板１は例えばシリコン単結晶板で構成され、これに例え
ばＰをドーピングすることによりｎ型シリコン層１−０
が形成される。このｎ型シリコン層１−０のシート抵抗
は約１〜１０Ω／口である。In FIG. 1, 1 is a silicon substrate, 2 is an electron injecting and transporting layer, 3 is a light emitting layer, 4 is a hole injecting and transporting layer, and 5 is a transparent electrode. The silicon substrate 1 has an n-type silicon layer 1-0 that operates as a cathode. The silicon substrate 1 is composed of, for example, a silicon single crystal plate, and the n-type silicon layer 1-0 is formed by doping P into the silicon substrate 1.
Is formed. The sheet resistance of the n-type silicon layer 1-0 is about 1 to 10 Ω / port.
【００１４】電子注入輸送層２は、例えばトリス（８−
キノリノラト）アルミニウムを蒸着することにより形成
される。発光層３は、前記電子注入輸送層２を構成する
例えばトリス（８−キノリノラト）アルミニウムと、後
述する正孔注入輸送層４を構成する例えば化１で表され
るテトラアリールジアミン誘導体との混合物が使用され
る。この場合、異なる蒸着源より蒸発される共蒸着が好
ましいが、これに限定されるものではない。勿論蛍光性
物質を含ませることもできる。The electron injecting and transporting layer 2 is, for example, tris (8-
Quinolinolato) formed by vapor deposition of aluminum. The light-emitting layer 3 is composed of a mixture of, for example, tris (8-quinolinolato) aluminum that constitutes the electron injecting and transporting layer 2 and a tetraaryldiamine derivative represented by Chemical Formula 1 that constitutes the hole injecting and transporting layer 4 described later. used. In this case, co-evaporation in which different evaporation sources are used is preferable, but the present invention is not limited to this. Of course, a fluorescent substance can be included.
【００１５】正孔注入輸送層４は、前記化１で表される
テトラアリールジアミン誘導体や、下記化２で表される
Ｎ、Ｎ′−ジ（３−メチルフェニル）−Ｎ、Ｎ′−ジフ
ェニル−４、４′−ジアミノ−１、１′ビフェニルを蒸
着することにより形成される。The hole injecting and transporting layer 4 is composed of the tetraaryldiamine derivative represented by the above chemical formula 1 and N, N'-di (3-methylphenyl) -N, N'-diphenyl represented by the following chemical formula 2. -4,4'-diamino-1,1'biphenyl is formed by vapor deposition.
【００１６】[0016]
【化２】 [Chemical 2]
【００１７】透明電極５は陽極となるものであって、例
えばＩＴＯ等で構成され、蒸着又はスパッタリングによ
り成膜される。本発明では、陰極を、酸化しにくいｎ型
シリコン層で構成したので、従来のＭｇＡｇで構成され
た陰極に比較して耐酸化性を大きくすることができる。The transparent electrode 5 serves as an anode, is made of, for example, ITO, and is formed by vapor deposition or sputtering. In the present invention, since the cathode is composed of the n-type silicon layer which is hard to be oxidized, the oxidation resistance can be increased as compared with the conventional cathode composed of MgAg.
【００１８】本発明における有機ＥＬ素子と従来の有機
ＥＬ素子の発光光度−時間特性を図２で説明する。図２
において、Ａは図１で示す本発明による有機ＥＬ素子の
特性を示し、Ｂは図４で示す従来の構造の有機ＥＬ素子
の特性を示す。図２において横軸は時間（ｈｒ）、縦軸
は単位面積当たりの発光光度（カンデラ（ｃｄ）／ｃｍ
2 ）を示す。なお図２は大気雰囲気中で測定した値であ
る。Luminous intensity-time characteristics of the organic EL device of the present invention and the conventional organic EL device will be described with reference to FIG. Figure 2
2A, the characteristics of the organic EL element according to the present invention shown in FIG. 1 are shown, and the characteristics of the organic EL element of the conventional structure shown in FIG. 4 are shown. In FIG. 2, the horizontal axis represents time (hr), and the vertical axis represents luminous intensity per unit area (candela (cd) / cm).
2 ) is shown. Note that FIG. 2 shows values measured in the atmosphere.
【００１９】従来の構造の有機ＥＬ素子では、陰極にＭ
ｇが存在するため、Ａに示す如く、非常に短時間で発光
光度が小さくなるが、本発明の構造の有機ＥＬ素子で
は、Ｂに示す如く、１００００時間を経過しても約６０
０ｃｄの発光光度で発光している。In the organic EL device having the conventional structure, the cathode is M
Since g exists, the luminous intensity decreases in a very short time as shown in A. However, in the organic EL element having the structure of the present invention, as shown in B, it is about 60 even after 10,000 hours.
It emits light with a luminous intensity of 0 cd.
【００２０】本発明の第２実施例を図３に基づき説明す
る。本発明の第２実施例では、図１に示す第１実施例
を、例えばＳｉＯ2 の保護膜６でカバーするものであ
る。これにより、例えば紫外線等に対する悪影響を防止
できるので、図１に示される第１実施例よりも長時間発
光光度を保持することができる。この保護膜６をＳｉＯ
2 で形成する場合は下記の条件で、２０００Å程度に成
膜する。A second embodiment of the present invention will be described with reference to FIG. In the second embodiment of the present invention, the first embodiment shown in FIG. 1 is covered with a protective film 6 of, for example, SiO 2 . As a result, it is possible to prevent adverse effects on, for example, ultraviolet rays, so that the luminous intensity can be maintained for a longer period of time than in the first embodiment shown in FIG. This protective film 6 is made of SiO
When the film is formed by 2 , the film is formed under the following conditions to about 2000 Å.
【００２１】 温度 室温 Ｐｏｗｅｒ ５０〜５００Ｗ キャリアガス Ａｒ 圧力 ０．０１ Ｔｏｒｒ 高周波 保護膜６はＳｉＯ2 に限定されるものではなく、Ｓｉ3
Ｎ4 等を使用しても同様である。Temperature room temperature Power 50 to 500 W carrier gas Ar pressure 0.01 Torr high frequency The protective film 6 is not limited to SiO 2 , but Si 3
The same applies when N 4 or the like is used.
【００２２】なお、前記実施例では有機ＥＬ素子として
正孔注入輸送層、発光層、電子注入輸送層の３層構成の
有機ＥＬ素子の例について説明したが、本発明はこれに
限定されるものではない。例えば正孔輸送層（発光層）
＋電子輸送層、正孔輸送層＋電子輸送層（発光層）の如
きものに対しても同様に適用できる。In the above embodiments, an example of an organic EL element having a three-layer structure of a hole injecting / transporting layer, a light emitting layer and an electron injecting / transporting layer was described as an organic EL element, but the present invention is not limited to this. is not. For example, hole transport layer (light emitting layer)
The same applies to + electron transport layer, hole transport layer + electron transport layer (light emitting layer).
【００２３】[0023]
【発明の効果】本発明によれば、有機ＥＬ素子の陰極を
ｎ型シリコンで構成したので、従来のように酸化し易い
ＭｇＡｇ電極を使用する必要がないため、耐酸化性の強
い有機ＥＬ素子を得ることができ、発光寿命を大幅に長
くすることができた。According to the present invention, since the cathode of the organic EL element is composed of n-type silicon, it is not necessary to use a MgAg electrode which is easily oxidized as in the conventional case, and therefore the organic EL element having strong oxidation resistance is provided. Was obtained, and the light emission life could be significantly extended.
【図１】本発明の一実施例構成図を示す。FIG. 1 shows a block diagram of an embodiment of the present invention.
【図２】本発明の特性図を示す。FIG. 2 shows a characteristic diagram of the present invention.
【図３】本発明の第二実施例構成図を示す。FIG. 3 shows a configuration diagram of a second embodiment of the present invention.
【図４】従来の有機ＥＬ素子を示す。FIG. 4 shows a conventional organic EL device.
１ シリコン基板 ２ 電子注入輸送層 ３ 発光層 ４ 正孔注入輸送層 ５ 透明電極 ６ 保護膜 １０ ガラス基板 1 Silicon Substrate 2 Electron Injecting and Transporting Layer 3 Light Emitting Layer 4 Hole Injecting and Transporting Layer 5 Transparent Electrode 6 Protective Film 10 Glass Substrate
Claims (1)
と、陰極を具備する有機エレクトロルミネセンス素子に
おいて、 陰極をｎ型シリコンにより構成したことを特徴とする有
機エレクトロルミネセンス素子。1. An organic electroluminescence device comprising an electron injection device, a hole injection device, an anode and a cathode, wherein the cathode is made of n-type silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6232853A JPH0896964A (en) | 1994-09-28 | 1994-09-28 | Organic electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6232853A JPH0896964A (en) | 1994-09-28 | 1994-09-28 | Organic electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0896964A true JPH0896964A (en) | 1996-04-12 |
Family
ID=16945846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6232853A Withdrawn JPH0896964A (en) | 1994-09-28 | 1994-09-28 | Organic electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0896964A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002090466A1 (en) * | 2001-05-04 | 2002-11-14 | Elam-T Limited | Electroluminescent devices |
| WO2007011132A1 (en) * | 2005-07-15 | 2007-01-25 | Lg Chem.Ltd. | Organic light emitting device and method for manufacturing the same |
-
1994
- 1994-09-28 JP JP6232853A patent/JPH0896964A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002090466A1 (en) * | 2001-05-04 | 2002-11-14 | Elam-T Limited | Electroluminescent devices |
| WO2002090465A1 (en) * | 2001-05-04 | 2002-11-14 | Elam-T Limited | Electroluminescent devices |
| WO2007011132A1 (en) * | 2005-07-15 | 2007-01-25 | Lg Chem.Ltd. | Organic light emitting device and method for manufacturing the same |
| KR100775734B1 (en) * | 2005-07-15 | 2007-11-09 | 주식회사 엘지화학 | Organic Light Emitting Device and Method for Manufacturing the Same |
| US8040044B2 (en) | 2005-07-15 | 2011-10-18 | Lg Chem, Ltd. | Organic light emitting device and method for manufacturing the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20020115 |