JPH0896963A - Organic electroluminescence element - Google Patents
Organic electroluminescence elementInfo
- Publication number
- JPH0896963A JPH0896963A JP6232852A JP23285294A JPH0896963A JP H0896963 A JPH0896963 A JP H0896963A JP 6232852 A JP6232852 A JP 6232852A JP 23285294 A JP23285294 A JP 23285294A JP H0896963 A JPH0896963 A JP H0896963A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- organic
- transporting layer
- present
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は有機エレクトロルミネセ
ンス（ＥＬ）素子に係り、特に陰極の耐酸化性を大きく
することによりその発光寿命を長くするための有機ＥＬ
用電極に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence (EL) device, and more particularly, to an organic EL device for extending the light emission life by increasing the oxidation resistance of the cathode.
The present invention relates to an electrode for use.
【０００２】[0002]
【従来の技術】有機ＥＬ素子は、薄形の新しい発光源と
して注目されている。従来の有機ＥＬ素子は、図４に示
す如く、ガラス基板１０上にＩＴＯの如き透明電極１を
形成し、この上に正孔注入輸送層２、発光層３、電子注
入輸送層４、陰極６等を形成することにより構成されて
いる。2. Description of the Related Art Organic EL devices have been attracting attention as new thin light emitting sources. In a conventional organic EL device, as shown in FIG. 4, a transparent electrode 1 such as ITO is formed on a glass substrate 10, on which a hole injecting and transporting layer 2, a light emitting layer 3, an electron injecting and transporting layer 4, a cathode 6 are formed. Etc. are formed.
【０００３】正孔注入輸送層２としては、例えば下記化
１で表されるテトラアリールジアミン誘導体を使用す
る。As the hole injecting and transporting layer 2, for example, a tetraaryldiamine derivative represented by the following chemical formula 1 is used.
【０００４】[0004]
【化１】 [Chemical 1]
【０００５】〔化１において、Ｒ1 、Ｒ2 、Ｒ3 及びＲ
4 はそれぞれアリール基、アルキル基、アルコキシ基、
アリールオキシ基、アミノ基又はハロゲン原子を表す。
ｒ１、ｒ２、ｒ３及びｒ４は、それぞれ０又は１〜５の
整数である。Ｒ5 及びＲ6 は、アルキル基、アルコキシ
基、アミノ基又はハロゲン原子を表し、これらは同一で
も異なるものであってもよい。ｒ５及びｒ６は、それぞ
れ０又は１〜４の整数である。〕 発光層３としては、前記化１で示すテトラアリールジア
ミン誘導体と、後述する電子注入輸送層４で使用される
トリス（８−キノリノラト）アルミニウム等の混合され
たものが使用される。[In Chemical Formula 1, R 1 , R 2 , R 3 and R
4 is an aryl group, an alkyl group, an alkoxy group,
It represents an aryloxy group, an amino group or a halogen atom.
r1, r2, r3 and r4 are each 0 or an integer of 1 to 5. R 5 and R 6 represent an alkyl group, an alkoxy group, an amino group or a halogen atom, which may be the same or different. r5 and r6 are 0 or an integer of 1 to 4, respectively. As the light emitting layer 3, a mixture of the tetraaryldiamine derivative represented by Chemical Formula 1 and tris (8-quinolinolato) aluminum used in the electron injecting and transporting layer 4 described later is used.
【０００６】電子注入輸送層４としては、例えばトリス
（８−キノリノラト）アルミニウムが使用される。陰極
６としては、Ｍｇ・Ａｇ（例えば重量比１０：１）を使
用する。As the electron injecting and transporting layer 4, for example, tris (8-quinolinolato) aluminum is used. As the cathode 6, Mg · Ag (for example, weight ratio 10: 1) is used.
【０００７】[0007]
【発明が解決しようとする課題】ところで前記の如く構
成された有機ＥＬ素子は、最初は強く発光しているが、
時間が経過するにつれて発光強度が急速に減少するとい
う欠点がある。By the way, the organic EL element having the above-described structure emits intense light at first,
There is a drawback that the emission intensity decreases rapidly with the passage of time.
【０００８】本発明はこの問題を改善すべく研究したと
ころ、これが陰極の構成材料にＭｇが存在するため陰極
が非常に酸化し易いことにもとづき、陰極が直ちに酸化
することに起因することが解明された。The present invention has been studied to improve this problem, and it is clarified that this is due to the fact that the cathode is oxidized immediately because Mg is present in the constituent material of the cathode and the cathode is easily oxidized. Was done.
【０００９】従って本発明の目的は、有機ＥＬ素子の発
光を長時間持続することができるために、酸化しにくい
陰極電極を提供することである。Therefore, it is an object of the present invention to provide a cathode electrode which is difficult to oxidize because the light emission of the organic EL element can be maintained for a long time.
【００１０】[0010]
【課題を解決するための手段】前記目的を達成するた
め、本発明の有機ＥＬ素子では、図に示す如く、陰極５
をＳｉが１０〜９０％含まれるＳｉ・Ｍｇ・Ａｇ合金で
構成する。In order to achieve the above object, in the organic EL device of the present invention, as shown in the drawing, a cathode 5 is used.
Is composed of a Si / Mg / Ag alloy containing 10 to 90% of Si.
【００１１】[0011]
【作用】Ｍｇ・ＡｇにＳｉを加えるとＳｉ・Ｍｇ・Ａｇ
となり陰極全体が酸化しにくいシリサイドとなるので、
耐酸化性の大きな陰極となり、有機ＥＬ素子の発光時間
を長くすることができる。[Function] When Si is added to Mg / Ag, Si / Mg / Ag
Since the whole cathode becomes a silicide that is difficult to oxidize,
It becomes a cathode with high oxidation resistance, and the emission time of the organic EL element can be lengthened.
【００１２】[0012]
【実施例】本発明の一実施例を図１〜図３にもとづき説
明する。図１は本発明の一実施例構成図、図２は発光光
度−時間特性図、図３はＳｉの含有量−発光効率特性図
である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a structural diagram of an embodiment of the present invention, FIG. 2 is a luminous intensity-time characteristic diagram, and FIG. 3 is a Si content-luminous efficiency characteristic diagram.
【００１３】図１において、１は透明電極、２は正孔注
入輸送層、３は発光層、４は電子注入輸送層、５はＳｉ
・Ｍｇ・Ａｇで構成される陰極、１０はガラス基板であ
る。透明電極１は陽極となるものであって、例えばＩＴ
Ｏ等で構成され、ガラス基板１０上に蒸着又はスパッタ
リングにより成膜される。In FIG. 1, 1 is a transparent electrode, 2 is a hole injecting and transporting layer, 3 is a light emitting layer, 4 is an electron injecting and transporting layer, and 5 is Si.
The cathode 10 composed of Mg and Ag is a glass substrate. The transparent electrode 1 serves as an anode, for example, IT
It is made of O or the like and is formed on the glass substrate 10 by vapor deposition or sputtering.
【００１４】正孔注入輸送層２は、前記化１で表される
テトラアリールジアミン誘導体や、下記化２で表される
Ｎ、Ｎ′−ジ（３−メチルフェニル）−Ｎ、Ｎ′−ジフ
ェニル−４、４′−ジアミノ−１、１′ビフェニルを蒸
着することにより形成される。The hole injecting and transporting layer 2 includes the tetraaryldiamine derivative represented by the above Chemical Formula 1 and N, N'-di (3-methylphenyl) -N, N'-diphenyl represented by the following Chemical Formula 2. -4,4'-diamino-1,1'biphenyl is formed by vapor deposition.
【００１５】[0015]
【化２】 [Chemical 2]
【００１６】発光層３は、前記正孔注入輸送層２を構成
する例えば化１で表されるテトラアリールジアミン誘導
体と、後述する電子注入輸送層４を構成する例えばトリ
ス（８−キノリノラト）アルミニウムとの混合物が使用
される。この場合、異なる蒸発源より蒸発させる共蒸着
が好ましいが、これに限定されるものではない。勿論蛍
光性物質を含ませることもできる。The light emitting layer 3 comprises, for example, a tetraaryldiamine derivative represented by the chemical formula 1 which constitutes the hole injecting and transporting layer 2, and tris (8-quinolinolato) aluminum which constitutes the electron injecting and transporting layer 4 which will be described later. A mixture of In this case, co-evaporation in which evaporation is performed from different evaporation sources is preferable, but the invention is not limited to this. Of course, a fluorescent substance can be included.
【００１７】電子注入輸送層４は、例えばトリス（８−
キノリノラト）アルミニウムを蒸着することにより形成
される。陰極５は、Ｓｉ・Ｍｇ・Ａｇで構成される。陰
極５は蒸着又はスパッタリングにより成膜される。The electron injecting and transporting layer 4 is, for example, tris (8-
Quinolinolato) formed by vapor deposition of aluminum. The cathode 5 is made of Si / Mg / Ag. The cathode 5 is formed by vapor deposition or sputtering.
【００１８】本発明においては、陰極５を酸化し難いＳ
ｉＭｇＡｇで構成する。陰極におけるＳｉの含有量を大
にすればそれに応じて発光効率は低下し、発光光度は暗
くなる。In the present invention, S which is difficult to oxidize the cathode 5
It is composed of iMgAg. If the content of Si in the cathode is increased, the luminous efficiency is correspondingly decreased and the luminous intensity becomes dark.
【００１９】例えば陰極としてＭｇ・Ａｇ（重量比１
０：１）を使用したときの発光光度を１００％としたと
き、これにＳｉを含有した場合、その含有量にしたがっ
て、図３に示す如く発光光度は低下し、発光効率は低下
する。For example, as a cathode, Mg.Ag (weight ratio 1
When the luminous intensity when 0: 1) is used as 100%, when Si is contained in the luminous intensity, the luminous intensity decreases as shown in FIG. 3 according to the content, and the luminous efficiency decreases.
【００２０】しかし図２に例示するように、Ｓｉの含有
量により発光接続時間が変化する。図２において特性曲
線Ａはｗｔ％でＳｉ＝０％、ＢはＳｉ＝１０％、ＣはＳ
ｉ＝１５％の場合を示す。これにより明らかなようにＳ
ｉの含有量が大きくなれば発光持続時間は長くなる。な
お図２は大気雰囲気中で測定した値である。However, as illustrated in FIG. 2, the light emission connection time varies depending on the Si content. In FIG. 2, the characteristic curve A is wt% and Si = 0%, B is Si = 10%, and C is S.
The case where i = 15% is shown. This makes it clear that S
The longer the content of i, the longer the light emission duration. Note that FIG. 2 shows values measured in the atmosphere.
【００２１】Ｓｉの量が１０％の場合には初期値は明る
いが１００時間位で１００ｃｄ／ｃｍ2 となる。Ｓｉの
量が１５％の場合は初期値は１０％の場合より少し落ち
るが１０００時間位で１００ｃｄ／ｃｍ2 となる。Ｓｉ
の量が９０％の場合は、初期値は２００ｃｄ／ｃｍ2 で
あるが、１０００時間を越えても１００ｃｄ／ｃｍ2よ
り明るい。When the amount of Si is 10%, the initial value is bright but becomes 100 cd / cm 2 after about 100 hours. When the amount of Si is 15%, the initial value drops a little as compared with the case of 10%, but becomes 100 cd / cm 2 after about 1000 hours. Si
If the amount is 90% of the initial value is a 200 cd / cm 2, brighter than even 100 cd / cm 2 beyond 1000 hours.
【００２２】従って本発明では、陰極におけるＳｉの含
有量は１０〜９０％（ｗｔ）が好ましい。前記実施例で
は、有機ＥＬ素子として正孔注入輸送層、発光層、電子
注入輸送層の３層構成の例について説明したが、本発明
は勿論これに限定されるものではない。例えば正孔輸送
層（発光層）＋電子輸送層、正孔輸送層＋電子輸送層
（発光層）の如きものに対しても同様に適用できる。Therefore, in the present invention, the Si content in the cathode is preferably 10 to 90% (wt). In the above-mentioned embodiment, an example of a three-layer structure of a hole injecting / transporting layer, a light emitting layer, and an electron injecting / transporting layer was described as an organic EL element, but the present invention is not limited to this. For example, the same applies to a hole transport layer (light emitting layer) + electron transport layer and a hole transport layer + electron transport layer (light emitting layer).
【００２３】またＳｉＯ2 等の保護膜を形成することも
できる。なお、ＭｇＡｇの割合は、前記の如く重量比で
１０：１に限定されるものではない。It is also possible to form a protective film such as SiO 2 . The ratio of MgAg is not limited to 10: 1 by weight as described above.
【００２４】[0024]
【発明の効果】本発明によれば陰極にＳｉを含有させて
その耐酸化性を向上させることができるので、発光時間
を長時間持続することが可能な有機ＥＬ素子を提供する
ことができる。According to the present invention, since the cathode can contain Si to improve its oxidation resistance, it is possible to provide an organic EL element capable of maintaining a long light emission time.
【図１】本発明の一実施例構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】本発明における発光光度−発光時間特性図であ
る。FIG. 2 is a light emission intensity-light emission time characteristic diagram in the present invention.
【図３】本発明におけるＳｉ含有率−発光効率特性図で
ある。FIG. 3 is a Si content-luminous efficiency characteristic diagram in the present invention.
【図４】従来例の有機ＥＬ素子である。FIG. 4 shows a conventional organic EL device.
１ 透明電極 ２ 正孔注入輸送層 ３ 発光層 ４ 電子注入輸送層 ５ 陰極 １０ ガラス基板 1 Transparent Electrode 2 Hole Injecting and Transporting Layer 3 Light Emitting Layer 4 Electron Injecting and Transporting Layer 5 Cathode 10 Glass Substrate
Claims (1)
と、陰極を具備する有機エレクトロルミネセンス素子に
おいて、 その陰極をＳｉＭｇＡｇで構成するとともにＳｉの含有
量を１０〜９０ｗｔ％としたことを特徴とする有機エレ
クトロルミネセンス素子。1. In an organic electroluminescent device comprising an electron injection means, a hole injection means, an anode and a cathode, the cathode is made of SiMgAg and the Si content is set to 10 to 90 wt%. An organic electroluminescence device characterized by.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6232852A JPH0896963A (en) | 1994-09-28 | 1994-09-28 | Organic electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6232852A JPH0896963A (en) | 1994-09-28 | 1994-09-28 | Organic electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0896963A true JPH0896963A (en) | 1996-04-12 |
Family
ID=16945830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6232852A Withdrawn JPH0896963A (en) | 1994-09-28 | 1994-09-28 | Organic electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0896963A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0729191A3 (en) * | 1995-02-23 | 1996-11-06 | Eastman Kodak Co | Conductive electron injector for light-emitting diodes |
| JPH08330072A (en) * | 1995-06-06 | 1996-12-13 | Fuji Electric Co Ltd | Organic thin film luminescent element and manufacture thereof |
| JP2005108825A (en) * | 2003-09-12 | 2005-04-21 | Semiconductor Energy Lab Co Ltd | Light emitting apparatus and method of manufacturing the same |
| US7816863B2 (en) | 2003-09-12 | 2010-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing the same |
-
1994
- 1994-09-28 JP JP6232852A patent/JPH0896963A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0729191A3 (en) * | 1995-02-23 | 1996-11-06 | Eastman Kodak Co | Conductive electron injector for light-emitting diodes |
| JPH08330072A (en) * | 1995-06-06 | 1996-12-13 | Fuji Electric Co Ltd | Organic thin film luminescent element and manufacture thereof |
| JP2005108825A (en) * | 2003-09-12 | 2005-04-21 | Semiconductor Energy Lab Co Ltd | Light emitting apparatus and method of manufacturing the same |
| US7816863B2 (en) | 2003-09-12 | 2010-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing the same |
| JP2011134733A (en) * | 2003-09-12 | 2011-07-07 | Semiconductor Energy Lab Co Ltd | Light-emitting device and method for manufacturing the same |
| US8283862B2 (en) | 2003-09-12 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20020115 |