JPH0896865A - Electric contact - Google Patents
Electric contactInfo
- Publication number
- JPH0896865A JPH0896865A JP23309294A JP23309294A JPH0896865A JP H0896865 A JPH0896865 A JP H0896865A JP 23309294 A JP23309294 A JP 23309294A JP 23309294 A JP23309294 A JP 23309294A JP H0896865 A JPH0896865 A JP H0896865A
- Authority
- JP
- Japan
- Prior art keywords
- electrical contact
- ceramic
- coating
- conductor pattern
- electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は電気接点に関し、特に電
子部品等と基板等を接続する電気接点に関するものであ
り、更に詳しくは、FPC基板とプリント基板,QFP
型ICとテストソケット,BGA型ICとテストソケッ
トなどの接続を行う電気接点に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrical contact, and more particularly to an electrical contact for connecting an electronic component or the like to a board or the like. More specifically, it relates to an FPC board, a printed board, a QFP.
The present invention relates to electrical contacts for connecting a type IC and a test socket, a BGA type IC and a test socket, and the like.
【0002】[0002]
【従来の技術】従来、電子部品等と基板等との良好な電
気的接続は、その障害となる電気接点の表面の酸化物ま
たは汚染物を1芯当たり100g程度の接触圧力をかけ
て押しつぶすことによって得ていた。2. Description of the Related Art Conventionally, a good electrical connection between an electronic component or the like and a substrate or the like has been achieved by crushing oxides or contaminants on the surface of an electrical contact, which is an obstacle, by applying a contact pressure of about 100 g per core. Was getting by.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、ICの
高性能化が進むにつれ、端子数もそれに比例して多くな
り、端子数が100芯以上のものも少なくない。このよ
うな現状の下において、電気接点表面の酸化物や汚染物
を押しつぶすことによって良好な接続を得るためには、
1芯当たり100gの接触圧力でもって押しつぶすとす
ると、全体では10Kg以上の接触圧力が必要とされ
る。したがって、端子部やその関係部材の機構、強度、
寸法をこの過大な接触圧力に耐え得るように設計してお
かなければならず、コストアップの一因となっていた。
これは多芯化すればする程、大きな問題となり、将来に
おける大きな障壁となっていた。However, as the performance of ICs has increased, the number of terminals has increased in proportion thereto, and the number of terminals having 100 or more cores is not small. Under these circumstances, in order to obtain a good connection by crushing oxides and contaminants on the electrical contact surface,
When crushing with a contact pressure of 100 g per core, a contact pressure of 10 kg or more is required as a whole. Therefore, the mechanism of the terminal portion and its related members, strength,
The dimensions must be designed so as to withstand this excessive contact pressure, which has been a factor in increasing costs.
This becomes a big problem as the number of cores is increased, and it has become a big barrier in the future.
【0004】本発明は、上記従来技術の課題に鑑みて提
案されたもので、芯数が多くなっても、相互に導通接続
されるコンタクト間に大きな接触圧力を加えなくても、
確実なコンタクト(端子)間の導通を得ることが可能な
電気接点を得ることを目的として提案されたものであ
る。The present invention has been proposed in view of the above problems of the prior art. Even if the number of cores is large and a large contact pressure is not applied between the contacts that are conductively connected to each other,
It is proposed for the purpose of obtaining an electrical contact capable of obtaining reliable conduction between contacts (terminals).
【0005】[0005]
【課題を解決するための手段】第1の発明は、上記目的
を達成するため、導体パターン上の電気接点部の位置
に、セラミックスの溶射皮膜を形成し、その後にスズメ
ッキまたはその合金メッキを施すことを特徴とする電気
接点を得ることができる。In order to achieve the above object, a first invention is to form a ceramic sprayed coating at a position of an electric contact portion on a conductor pattern, and then perform tin plating or its alloy plating. It is possible to obtain an electrical contact characterized by the above.
【0006】また、第1の発明は、導体パターンの厚さ
が数μm〜数十μmであることを特徴とする電気接点を
得ることができる。Further, according to the first invention, it is possible to obtain an electrical contact characterized in that the thickness of the conductor pattern is several μm to several tens μm.
【0007】また、第1の発明は、上記セラミックス溶
射皮膜の膜厚が5〜50μmであることを特徴とする電
気接点を得ることができる。Further, according to the first aspect of the present invention, it is possible to obtain an electrical contact characterized in that the ceramic sprayed coating has a thickness of 5 to 50 μm.
【0008】また、第1の発明は、上記セラミックスが
導電性を有するZrO2 ,またはTiO2 であることを
特徴とする電気接点を得ることができる。Further, according to the first invention, it is possible to obtain an electric contact characterized in that the ceramic is ZrO2 or TiO2 having conductivity.
【0009】第2の発明は、導体パターン上に金属皮膜
を形成し、該金属皮膜上の電気接点部の位置に、導電性
セラミックスの溶射皮膜を形成することを特徴とする電
気接点を得ることができる。A second invention is to obtain an electric contact characterized in that a metal coating is formed on a conductor pattern and a sprayed coating of conductive ceramics is formed at a position of the electric contact portion on the metal coating. You can
【0010】また、第2の発明は、上記導体パターンの
厚さが数μm〜数十μmであることを特徴とする電気接
点を得ることができる。The second aspect of the present invention can provide an electrical contact characterized in that the conductor pattern has a thickness of several μm to several tens of μm.
【0011】また、第2の発明は、上記金属皮膜が1〜
10μmの膜厚に形成されていることを特徴とする電気
接点を得ることができる。A second aspect of the present invention is that the metal film has
It is possible to obtain an electrical contact characterized by being formed with a film thickness of 10 μm.
【0012】また、第2の発明は、上記導電性セラミッ
クス溶射皮膜の膜厚が5〜50μmであることを特徴と
する電気接点を得ることができる。The second aspect of the present invention can provide an electrical contact characterized in that the conductive ceramic sprayed coating has a thickness of 5 to 50 μm.
【0013】また、第2の発明は、上記導電性セラミッ
クスがWC,TiB2 ,ZrB2 ,TiN,ZrN,C
r3 C2 ,TiCのいずれかであって、Ni―Cr合金
またはCo合金を用いたサーメット溶射にて形成される
ことを特徴とする電気接点を得ることができる。In a second aspect of the invention, the conductive ceramics are WC, TiB2, ZrB2, TiN, ZrN, C.
It is possible to obtain an electrical contact characterized by being formed by cermet thermal spraying using either Ni--Cr alloy or Co alloy, which is either r3 C2 or TiC.
【0014】また、第2の発明は、上記によって形成さ
れた電気接点上にメッキ層が施されていることを特徴と
する電気接点を得ることができる。The second aspect of the present invention can provide an electric contact characterized in that a plating layer is formed on the electric contact formed as described above.
【0015】第3の発明は、導体パターン上に金属皮膜
を形成し、該金属皮膜上の所望する電気接点部の位置
に、セラミックスの溶射皮膜を形成し、かつ、その上に
ニッケルメッキ層または金メッキ層を形成することを特
徴とする電気接点を得ることができる。In a third aspect of the present invention, a metal coating is formed on a conductor pattern, a thermal spray coating of ceramics is formed at a desired electric contact portion position on the metal coating, and a nickel plating layer or An electrical contact characterized by forming a gold plating layer can be obtained.
【0016】また、第3の発明は上記セラミックス溶射
皮膜の膜厚が5〜50μmであることを特徴とする電気
接点を得ることができる。The third aspect of the present invention can provide an electrical contact characterized in that the ceramic sprayed coating has a thickness of 5 to 50 μm.
【0017】また、第3の発明は、上記金属皮膜が1〜
10μmの膜厚に形成されていることを特徴とする電気
接点を得ることができる。In a third aspect of the invention, the metal film has
It is possible to obtain an electrical contact characterized by being formed with a film thickness of 10 μm.
【0018】また、第3の発明は、上記セラミックスが
導電性を有するZrO2 ,またはTiO2 であることを
特徴とする電気接点を得ることができる。The third aspect of the present invention can provide an electrical contact characterized in that the ceramic is ZrO2 or TiO2 having conductivity.
【0019】また、上記セラミックスの溶射皮膜が、溶
射用セラミックス粉体に予め金属、例えばニッケル・金
・アモルファス合金をコーティングした粉体を溶射して
形成されていることを特徴とする電気接点を得ることが
できる。Also, an electrical contact is obtained in which the thermal spray coating of the ceramic is formed by thermal spraying a powder obtained by coating a ceramic powder for thermal spraying with a metal, for example, nickel / gold / amorphous alloy in advance. be able to.
【0020】さらに、溶射に使用する粉体の粒径が5〜
50μmであることを特徴とする電気接点を得ることが
できる。Furthermore, the particle size of the powder used for thermal spraying is 5 to 5.
It is possible to obtain an electrical contact characterized by having a thickness of 50 μm.
【0021】[0021]
【作用】上記構成の本発明によれば、相互に導通させる
電気接点部同士を低接触力でもって接触させても、第1
の発明においてはスズメッキまたはその合金メッキされ
た硬質セラミックスによって、第2の発明においては導
電性セラミックスによって、第3の発明においてはニッ
ケルメッキまたは金メッキされた硬質セラミックスによ
って、酸化物や汚染物を突き破って良好な導通を得るこ
とができる。According to the present invention having the above-mentioned structure, even if the electric contact portions which are electrically connected to each other are brought into contact with each other with a low contact force,
In the present invention, the hard ceramics plated with tin or an alloy thereof are used to break through oxides and contaminants by the conductive ceramics in the second invention, and the hard ceramics plated with nickel or gold in the third invention. Good conduction can be obtained.
【0022】[0022]
【実施例】次に、本発明の実施例について添付の図面を
参照して説明する。Embodiments of the present invention will now be described with reference to the accompanying drawings.
【0023】図1は、第1の発明の実施例を示すもの
で、本実施例においては、QFP型ICのリードとテス
トソケットとを相互に導通接続させる場合を例にとって
説明する。FIG. 1 shows an embodiment of the first invention. In this embodiment, a case where the leads of the QFP type IC and the test socket are electrically connected to each other will be described as an example.
【0024】図1に示すように、テストソケットの基板
1の上には、例えば、銅からなる導体パターン2を形成
しておく。この導体パターン2は、アディティブ法やサ
ブトラクティブ法によって、厚さが例えば数十μmとな
るように形成しておく。As shown in FIG. 1, a conductor pattern 2 made of, for example, copper is formed on a substrate 1 of a test socket. The conductor pattern 2 is formed by an additive method or a subtractive method to have a thickness of, for example, several tens of μm.
【0025】次に、上記の様にして形成された導体パタ
ーン2上に、セラミックス(あるいは、酸化物セラミッ
クス)の溶射皮膜4Aを形成する。この溶射皮膜4Aは
膜厚が5〜50μmとなるように形成されている。この
ときのセラミックス溶射皮膜4Aは、表面粗さが5〜5
0μm程度となり、IC9の電気接点部90に付着して
いる酸化物、汚染物を突き破るに十分な突起を有する電
気接点となる。Next, a sprayed coating 4A of ceramics (or oxide ceramics) is formed on the conductor pattern 2 formed as described above. The thermal spray coating 4A is formed to have a film thickness of 5 to 50 μm. At this time, the ceramic sprayed coating 4A has a surface roughness of 5-5.
The thickness is about 0 μm, and the electric contact has a protrusion sufficient to break through oxides and contaminants attached to the electric contact portion 90 of the IC 9.
【0026】そして、この後、セラミックス溶射皮膜層
4Aの表面にスズメッキを施し、基板1側の電気接点と
する。これにより、IC9の電気接点部90と基板1側
の電気接点とは、低接触力でもって接触しても十分な導
通が得られることになる。Then, after that, tin plating is applied to the surface of the ceramic sprayed coating layer 4A to form electrical contacts on the substrate 1 side. As a result, even if the electrical contact portion 90 of the IC 9 and the electrical contact on the substrate 1 side are brought into contact with each other with a low contact force, sufficient conduction can be obtained.
【0027】次に、第2の発明の実施例について説明す
る。第2の発明の実施例も第1の発明の実施例と同様
に、QFP型ICのリードとテストソケットとを相互に
導通接続させる場合を例にとって説明する。Next, an embodiment of the second invention will be described. Similarly to the first embodiment, the second embodiment of the invention will be described by taking as an example the case where the leads of the QFP IC and the test socket are electrically connected to each other.
【0028】図2に示すように、テストソケットの基板
1の上に、例えば銅などの材料からなる導体パターン2
を形成しておく。この導体パターン2も例えばアディテ
ィブ法やサブトラクティブ法によって厚さが例えば数十
μmとなるように形成しておく。As shown in FIG. 2, a conductor pattern 2 made of a material such as copper is formed on the substrate 1 of the test socket.
Is formed. The conductor pattern 2 is also formed by an additive method or a subtractive method so as to have a thickness of, for example, several tens of μm.
【0029】そして、導体パターン2の表面に、厚さ1
〜10μmの金属皮膜、例えばニッケルまたはその合金
のメッキ層3を形成する。これは、導体パターン2の材
料たる銅の腐食防止のためであり、また、後述する導電
性セラミックスをCo,Ni―Cr合金を用いたサーメ
ット溶射に対して密着性を高めるためである。On the surface of the conductor pattern 2, the thickness 1
A metal film having a thickness of 10 μm, for example, a plating layer 3 of nickel or its alloy is formed. This is for the purpose of preventing corrosion of copper, which is the material of the conductor pattern 2, and for improving the adhesion of the conductive ceramics, which will be described later, to cermet thermal spraying using a Co, Ni—Cr alloy.
【0030】次に、上記の様にして形成されたメッキ層
3の上に、導電性セラミックスの溶射皮膜4Bを形成す
る。この溶射皮膜4Bは膜厚が5〜50μmとなるよう
に形成されている。このときの導電性セラミックス溶射
皮膜4Bは、表面粗さが5〜50μm程度となり、IC
9の電気接点部90に付着している酸化物、汚染物を突
き破るに十分な突起を有する電気接点となる。Next, a sprayed coating 4B of conductive ceramics is formed on the plating layer 3 formed as described above. The thermal spray coating 4B is formed to have a film thickness of 5 to 50 μm. At this time, the conductive ceramics sprayed coating 4B has a surface roughness of about 5 to 50 μm.
9 is an electric contact having protrusions sufficient to break through oxides and contaminants attached to the electric contact portion 90.
【0031】そして、必要があれば、導電性セラミック
ス溶射皮膜層4Bの表面に例えばスズメッキを施す。こ
れにより、IC9の電気接点部90と基板1側の電気接
点とは、低接触力でもって接触しても十分な導通を得る
ことが可能となる。Then, if necessary, the surface of the conductive ceramics sprayed coating layer 4B is plated with tin, for example. As a result, sufficient electrical continuity can be obtained even if the electrical contact portion 90 of the IC 9 and the electrical contact on the substrate 1 side are brought into contact with each other with low contact force.
【0032】次に、第3の発明について説明する。第3
の発明の実施例も第1の発明の実施例と同様に、QFP
型ICのリードとテストソケットとを相互に導通接続さ
せる場合を例にとって説明する。Next, the third invention will be described. Third
Similarly to the first embodiment of the invention, the embodiment of the invention of
An example will be described in which the leads of the mold IC and the test socket are electrically connected to each other.
【0033】図3に示すように、テストソケットの基板
1の上に、例えば銅などの材料からなる導体パターン2
を形成しておく。この導体パターン2も例えばアディテ
ィブ法やサブトラクティブ法によって厚さが例えば数十
μmとなるように形成しておく。As shown in FIG. 3, a conductor pattern 2 made of a material such as copper is formed on the substrate 1 of the test socket.
Is formed. The conductor pattern 2 is also formed by an additive method or a subtractive method so as to have a thickness of, for example, several tens of μm.
【0034】そして、導体パターン2の表面に、厚さ1
〜10μmの金属皮膜、例えばニッケルまたはその合金
のメッキ層3を形成する。このメッキ層3を設けるの
は、導体パターン2の材料たる銅の腐食防止のためであ
り、また、後述するセラミックスの溶射時にアンダーコ
ートとして機能し、密着性を高めるためである。On the surface of the conductor pattern 2, the thickness 1
A metal film having a thickness of 10 μm, for example, a plating layer 3 of nickel or its alloy is formed. The plating layer 3 is provided for the purpose of preventing corrosion of copper, which is the material of the conductor pattern 2, and for functioning as an undercoat during thermal spraying of ceramics, which will be described later, to enhance adhesion.
【0035】次に、上記の様にして形成されたメッキ層
3の上に、セラミックス(あるいは、酸化物セラミック
ス)の溶射皮膜4Cを形成する。この溶射皮膜4Cは膜
厚が5〜50μmとなるように形成されている。このと
きのセラミックス溶射皮膜4Cは、表面粗さが5〜50
μm程度となり、IC9の電気接点部90に付着してい
る酸化物、汚染物を突き破るに十分な突起を有する電気
接点となる。Next, a sprayed coating 4C of ceramics (or oxide ceramics) is formed on the plating layer 3 formed as described above. The thermal spray coating 4C is formed to have a film thickness of 5 to 50 μm. At this time, the ceramic sprayed coating 4C has a surface roughness of 5 to 50.
The thickness is about μm, and the electric contact has a protrusion sufficient to break through oxides and contaminants attached to the electric contact portion 90 of the IC 9.
【0036】そして、必要があれば、導電性セラミック
ス溶射皮膜層4Cの表面に、例えばスズメッキや金メッ
キを施す。これにより、IC9の電気接点部90と基板
の電気接点とは、低接触力でもって接触しても十分な導
通を得ることが可能となる。If necessary, the surface of the electrically conductive ceramics sprayed coating layer 4C is plated with, for example, tin or gold. As a result, sufficient electrical continuity can be obtained even if the electrical contact portion 90 of the IC 9 and the electrical contact of the substrate are brought into contact with each other with a low contact force.
【0037】また、上記セラミックスの溶射皮膜が、溶
射用セラミックス粉体に予め金属、例えばニッケル・金
・アモルファス合金をコーティングした粉体を溶射して
形成されていることを特徴とする電気接点を得ることが
できる。Further, an electrical contact is obtained in which the ceramic sprayed coating is formed by spraying a powder obtained by coating a ceramic powder for thermal spraying with a metal, for example, nickel / gold / amorphous alloy in advance. be able to.
【0038】さらに、溶射に使用する粉体の粒径が5〜
50μmであることを特徴とする電気接点を得ることが
できる。Furthermore, the particle size of the powder used for thermal spraying is 5 to 5.
It is possible to obtain an electrical contact characterized by having a thickness of 50 μm.
【0039】[0039]
【発明の効果】上記したように、本発明によれば、相互
に導通接続する少なくとも一方の電気接点に、相手側電
気接点に付着している酸化物や汚染物を突き破って相手
側の導体と良好な導通を得ることが可能となる。これに
より、相手側電気接点に付着している酸化物や汚染物を
押しつぶすことなく、導通を得ることができるので、多
芯のICであっても小さな接触圧力でもって良好な導通
を得ることができ、この結果、ICソケットの構造も簡
単で、かつ小型なものとすることができる。また、IC
のパッケージなどの強度もさほど強いものを必要としな
くてすむので、安価な材料を使用することができ、この
点からも製造コストダウンを図ることができる。As described above, according to the present invention, at least one of the electrical contacts electrically connected to each other is pierced by the oxides and contaminants adhering to the electrical contacts of the other party to form a conductor of the other party. Good conduction can be obtained. As a result, conduction can be obtained without crushing oxides and contaminants attached to the mating electrical contacts, so that good conduction can be obtained even with a multi-core IC with a small contact pressure. As a result, the structure of the IC socket can be made simple and small. Also, IC
Since it is not necessary to use a package having a relatively high strength, it is possible to use an inexpensive material, and the manufacturing cost can be reduced also from this point.
【図1】第1の発明の実施例を示す説明図である。FIG. 1 is an explanatory diagram showing an embodiment of the first invention.
【図2】第2の発明の実施例を示す説明図である。FIG. 2 is an explanatory diagram showing an embodiment of the second invention.
【図3】第3の発明の実施例を示す説明図である。FIG. 3 is an explanatory diagram showing an embodiment of the third invention.
1 基板 2 導体パターン 3 メッキ層 4A セラミックス溶射皮膜 4B 導電性セラミックス溶射皮膜 4C セラミックス溶射皮膜 1 Substrate 2 Conductor Pattern 3 Plating Layer 4A Ceramics Thermal Spray Coating 4B Conductive Ceramics Thermal Spray Coating 4C Ceramics Thermal Spray Coating
フロントページの続き (72)発明者 福本 正 東京都渋谷区道玄坂1丁目21番6号 日本 航空電子工業株式会社内 (72)発明者 桜田 司 長野県木曽郡上松町大字荻原字川向諸原 1391番地3 株式会社信州セラミックス内Front page continued (72) Inventor Tadashi Fukumoto 1-21-6 Dogenzaka, Shibuya-ku, Tokyo Within Japan Aviation Electronics Industry Co., Ltd. 3 Shinshu Ceramics Co., Ltd.
Claims (13)
セラミックスの溶射皮膜を形成し、該溶射皮膜上にスズ
メッキまたはその合金メッキが施されていることを特徴
とする電気接点。1. At a position of an electrical contact portion on a conductor pattern,
An electrical contact characterized in that a thermal spray coating of ceramics is formed and tin plating or its alloy plating is applied on the thermal spray coating.
50μmであることを特徴とする請求項1に記載の電気
接点。2. The ceramic sprayed coating has a thickness of 5 to 5.
The electrical contact according to claim 1, wherein the electrical contact has a thickness of 50 μm.
O2 ,またはTiO2 であることを特徴とする請求項1
または2に記載の電気接点。3. The Zr, wherein the ceramic has conductivity.
2. O2 or TiO2.
Or the electrical contact described in 2.
の溶射皮膜が形成されていることを特徴とする電気接
点。4. An electric contact, wherein a metal film is formed on a conductor pattern, and a sprayed film of conductive ceramics is formed at a position of the electric contact portion on the metal film.
成されていることを特徴とする請求項4に記載の電気接
点。5. The electrical contact according to claim 4, wherein the metal film is formed to have a film thickness of 1 to 10 μm.
50μmの膜厚に形成されていることを特徴とする請求
項4または5に記載の電気接点。6. The electrically conductive ceramics sprayed coating is 5 to 5.
The electrical contact according to claim 4, wherein the electrical contact is formed to have a film thickness of 50 μm.
2 ,ZrB2 ,TiN,ZrN,Cr3 C2 ,TiCの
いずれかであって、Ni―Cr合金またはCo合金を用
いたサーメット溶射にて形成されていることを特徴とす
る請求項4または5または6に記載の電気接点。7. The conductive ceramics are WC and TiB.
7. ZrB2, TiN, ZrN, Cr3 C2, or TiC, which is formed by cermet thermal spraying using a Ni--Cr alloy or a Co alloy. The electrical contacts listed.
メッキ層が施されていることを特徴とする請求項4また
は5または6または7に記載の電気接点。8. The electrical contact according to claim 4, 5 or 6 or 7, wherein a plating layer is formed on the sprayed coating of the conductive ceramics.
金属皮膜上の所望する電気接点部の位置に、セラミック
スの溶射皮膜を形成し、かつ、その上にニッケルメッキ
層または金メッキ層が形成されていることを特徴とする
電気接点。9. A metal coating is formed on a conductor pattern, a ceramic thermal spray coating is formed at a desired electric contact portion position on the metal coating, and a nickel plating layer or a gold plating layer is formed thereon. An electrical contact characterized by being used.
形成されていることを特徴とする請求項9に記載の電気
接点。10. The electrical contact according to claim 9, wherein the metal coating is formed to have a film thickness of 1 to 10 μm.
rO2 ,またはTiO2 であることを特徴とする請求項
9または10に記載の電気接点。11. The Z, wherein the ceramic has conductivity.
The electrical contact according to claim 9 or 10, which is rO2 or TiO2.
用セラミックス粉体に予め金属、例えばニッケル・金・
アモルファス合金をコーティングした粉体を溶射して形
成されていることを特徴とした請求項1、4または9に
記載の電気接点。12. The ceramic sprayed coating is formed on a ceramic powder for thermal spraying in advance with a metal such as nickel / gold / gold.
The electrical contact according to claim 1, 4 or 9, which is formed by spraying powder coated with an amorphous alloy.
μmであることを特徴とする請求項12に記載の電気接
点。13. The particle size of powder used for thermal spraying is 5 to 50.
The electric contact according to claim 12, wherein the electric contact is μm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6233092A JP2816812B2 (en) | 1994-09-28 | 1994-09-28 | Electrical contacts |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6233092A JP2816812B2 (en) | 1994-09-28 | 1994-09-28 | Electrical contacts |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0896865A true JPH0896865A (en) | 1996-04-12 |
JP2816812B2 JP2816812B2 (en) | 1998-10-27 |
Family
ID=16949663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6233092A Expired - Fee Related JP2816812B2 (en) | 1994-09-28 | 1994-09-28 | Electrical contacts |
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Country | Link |
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JP (1) | JP2816812B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001086018A3 (en) * | 2000-05-08 | 2002-04-18 | Ami Doduco Gmbh | Method for producing workpieces, which serve to conduct electric current and which are coated with a predominantly metallic material |
US6905952B2 (en) | 2002-05-27 | 2005-06-14 | Yamaichi Electronics Co., Ltd. | Recovery processing method of an electrode |
US7159292B2 (en) | 2002-05-27 | 2007-01-09 | Yamaichi Electronics Co., Ltd. | Recovery processing method of an electrode |
-
1994
- 1994-09-28 JP JP6233092A patent/JP2816812B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001086018A3 (en) * | 2000-05-08 | 2002-04-18 | Ami Doduco Gmbh | Method for producing workpieces, which serve to conduct electric current and which are coated with a predominantly metallic material |
US6905952B2 (en) | 2002-05-27 | 2005-06-14 | Yamaichi Electronics Co., Ltd. | Recovery processing method of an electrode |
US7159292B2 (en) | 2002-05-27 | 2007-01-09 | Yamaichi Electronics Co., Ltd. | Recovery processing method of an electrode |
Also Published As
Publication number | Publication date |
---|---|
JP2816812B2 (en) | 1998-10-27 |
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