JPH0892744A - Member coated with hard carbon film and its production - Google Patents
Member coated with hard carbon film and its productionInfo
- Publication number
- JPH0892744A JPH0892744A JP23486494A JP23486494A JPH0892744A JP H0892744 A JPH0892744 A JP H0892744A JP 23486494 A JP23486494 A JP 23486494A JP 23486494 A JP23486494 A JP 23486494A JP H0892744 A JPH0892744 A JP H0892744A
- Authority
- JP
- Japan
- Prior art keywords
- hard carbon
- carbon film
- diamond
- film
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は摺動部材、切削工具類、
研磨材、耐摩耗性機械部品、光学部品、装飾品の保護膜
などに適した硬質炭素膜、例えばダイヤモンド膜または
ダイヤモンド状炭素膜などを基体表面に被覆してなる硬
質炭素膜被覆部材およびその製造方法に関するものであ
る。BACKGROUND OF THE INVENTION The present invention relates to sliding members, cutting tools,
Hard carbon film coated member obtained by coating the surface of a substrate with a hard carbon film, such as a diamond film or a diamond-like carbon film, which is suitable as a protective film for abrasives, abrasion resistant mechanical parts, optical parts, ornaments, etc. It is about the method.
【０００２】[0002]
【従来の技術】ダイヤモンドは、硬度、耐摩耗性、固体
潤滑性、電気絶縁性、熱伝導性等に優れていることか
ら、例えば摺動部材、切削工具類、研磨材、耐摩耗性機
械部品、光学部品等の各種部材の被覆層や電気、電子材
料に利用されつつある。2. Description of the Related Art Since diamond is excellent in hardness, wear resistance, solid lubricity, electrical insulation, thermal conductivity, etc., for example, sliding members, cutting tools, abrasives, wear resistant mechanical parts, etc. It is being used as a coating layer for various members such as optical parts and as an electric and electronic material.
【０００３】また近年、低圧下での気相成長法によるダ
イヤモンド膜等の硬質炭素膜の合成が可能となったた
め、ダイヤモンド膜は前述したような用途に対して需要
がさらに増加しつつある。また、気相成長法はダイヤモ
ンドを膜状に基体へコーテイングすることができるた
め、ダイヤモンドの硬さや透光性といった性質を利用し
て装飾品の保護膜としても利用されつつある。In recent years, since it has become possible to synthesize a hard carbon film such as a diamond film by a vapor phase growth method under a low pressure, the demand for the diamond film is further increasing for the above-mentioned uses. Further, since the vapor phase growth method can coat diamond on a substrate in a film shape, it is being used as a protective film for ornaments by utilizing the properties such as hardness and translucency of diamond.
【０００４】しかし気相成長法により作製した硬質炭素
膜被覆部材は、膜自体は高硬度、低摩擦係数といった特
性を有するものの、膜の剥離などの理由から硬質炭素膜
の持つ高硬度及び低摩擦係数といった摺動部材や耐摩耗
性部材として優れた特性を発揮するには至っていない。
また、膜と基体との付着力が不充分であるため硬質炭素
膜表面の研磨加工が難しく、装飾品の保護膜として充分
な光沢を呈することができていない。However, although the hard carbon film coated member produced by the vapor phase growth method has characteristics such as high hardness and low friction coefficient, the hard carbon film has high hardness and low friction due to peeling of the film. It has not yet exhibited excellent characteristics such as a coefficient as a sliding member or a wear resistant member.
Further, since the adhesion between the film and the substrate is insufficient, it is difficult to polish the surface of the hard carbon film, and it is not possible to exhibit sufficient luster as a protective film for a decorative article.
【０００５】このような硬質炭素膜の基体からの剥離を
防止するために、様々な方法が提案されている。例え
ば、基体表面に凹凸を形成して密着性を向上させようと
する方法は、特開昭６１−１２１８５９号公報や特開昭
６２−２２６８８９号公報等に開示されており、これら
の公報には、基体を研磨剤粒子を分散した液中に浸し、
この分散液中に超音波を作用させて基体表面を研磨する
方法が提案されている。また、特開平２−２１７３９８
号公報では電解研磨を用いて基体の表面処理を施して付
着力の向上を図る方法が提案されている。Various methods have been proposed to prevent the hard carbon film from peeling off from the substrate. For example, a method of forming unevenness on the surface of a substrate to improve the adhesion is disclosed in JP-A-61-1212859, JP-A-62-226889, etc. , Immersing the substrate in the liquid in which the abrasive particles are dispersed,
A method has been proposed in which ultrasonic waves are applied to this dispersion to polish the surface of the substrate. In addition, JP-A-2-217398
In the publication, a method of improving the adhesion by applying a surface treatment to a substrate by using electrolytic polishing is proposed.
【０００６】[0006]
【発明が解決しようとする問題点】しかしながら、上記
のように基体表面の傷つけ処理を行って硬質炭素膜の密
着性を向上させようとする技術では、基体表面の傷が膜
成長に合致しないため、充分な密着性を得られていな
い。However, in the technique for improving the adhesion of the hard carbon film by performing the scratch treatment on the substrate surface as described above, the scratch on the substrate surface does not match the film growth. , Adhesion is not sufficient.
【０００７】また、基体にＳｉＣの中間膜を形成し、次
いでダイヤモンド膜を形成する方法が、例えば、特開昭
６３−２８６５７６号公報にて開示されている。ダイヤ
モンドの成長基体をＳｉＣに置き換えることにより、基
体と硬質炭素膜との密着性はある程度向上するものの、
中間膜とダイヤモンド膜との密着性が未だ低いため、摺
動部材、耐摩耗性部材などに利用するには至っていな
い。A method of forming an SiC intermediate film on a substrate and then forming a diamond film is disclosed in, for example, Japanese Patent Laid-Open No. 286576/1988. Although the adhesion between the substrate and the hard carbon film is improved to some extent by replacing the diamond growth substrate with SiC,
Since the adhesion between the intermediate film and the diamond film is still low, it has not yet been used as a sliding member, a wear resistant member or the like.
【０００８】即ち、このようなダイヤモンド以外の物質
を膜と基体との中間層として形成することにより基体と
ダイヤモンド膜との密着性を向上させようとする方法で
は、中間層と基体および中間層とダイヤモンド膜との密
着性の強さが、摺動部材、耐摩耗性部材等として充分に
利用できるほど強くなければ意味がないからである。That is, in the method of improving the adhesion between the substrate and the diamond film by forming such a substance other than diamond as the intermediate layer between the film and the substrate, the intermediate layer, the substrate and the intermediate layer are This is because it is meaningless unless the strength of adhesion to the diamond film is so strong that it can be sufficiently utilized as a sliding member, a wear resistant member, or the like.
【０００９】[0009]
【問題点を解決するための手段】本発明者は上記問題点
に対して検討を重ねた結果、硬質炭素膜と基体との間
に、少なくともダイヤモンドと共有結合性の炭化物が混
在した中間層を形成するとともに、この中間層のダイヤ
モンドを島状に分布させることにより、硬質炭素膜と基
体との密着性を向上することができることを見い出し、
本発明に至った。As a result of repeated studies on the above problems, the present inventor has found that an intermediate layer containing at least diamond and covalent carbide is mixed between the hard carbon film and the substrate. It was found that, by forming and distributing the diamond in the intermediate layer in an island shape, the adhesion between the hard carbon film and the substrate can be improved.
The present invention has been completed.
【００１０】本発明の硬質炭素膜被覆部材は、基体表面
に硬質炭素膜を被覆してなる硬質炭素膜被覆部材におい
て、前記硬質炭素膜と前記基体との間に、少なくとも島
状に分布するダイヤモンドと、炭化珪素または炭化ホウ
素を含有する中間層を配したものである。The hard carbon film-coated member of the present invention is a hard carbon film-coated member obtained by coating the surface of a substrate with a hard carbon film, and the diamond distributed at least in an island shape between the hard carbon film and the substrate. And an intermediate layer containing silicon carbide or boron carbide.
【００１１】このような硬質炭素膜被覆部材は、例え
ば、原料ガスとして、少なくとも水素と炭素含有ガスを
反応室内に導入し、気相成長法により、基板表面にダイ
ヤモンドを島状に析出させた後、さらに珪素含有ガスま
たはホウ素含有ガスを前記反応室内に導入することによ
りダイヤモンドと、炭化珪素または炭化ホウ素を同時に
析出させて、前記基板表面に少なくともダイヤモンド
と、炭化珪素または炭化ホウ素を含有する中間層を形成
し、さらに珪素含有ガスまたはホウ素含有ガスの供給を
停止することにより、前記中間層表面に前記硬質炭素膜
を形成することにより製造される。Such a hard carbon film-coated member is prepared, for example, by introducing at least hydrogen and a carbon-containing gas as a source gas into a reaction chamber, and depositing diamond in an island shape on the substrate surface by a vapor phase growth method. An intermediate layer containing at least diamond and silicon carbide or boron carbide on the surface of the substrate by simultaneously depositing diamond and silicon carbide or boron carbide by introducing a silicon-containing gas or a boron-containing gas into the reaction chamber. Is formed and the supply of the silicon-containing gas or the boron-containing gas is stopped, whereby the hard carbon film is formed on the surface of the intermediate layer.
【００１２】本発明に用いられる基体としては、Ｓｉ
Ｃ，Ｓｉ3 Ｎ4 ，ＡｌＮ，Ａｌ2 Ｏ3，ＺｒＯ2 等のセ
ラミックス，超硬合金，Ｍｏ，Ｗ，Ｔｉなどの金属類か
らなるものが用いられるが、特に熱膨張率の点からＳｉ
Ｃ，Ｓｉ3 Ｎ4 ，超硬合金，ＡｌＮ，Ｍｏ，Ｗが望まし
い。The substrate used in the present invention is Si
C, Si 3 N 4, AlN , Al 2 O 3, ZrO 2 or the like of ceramics, cemented carbides, Mo, W, although those made of metal such as Ti is used, Si particularly in terms of thermal expansion coefficient
C, Si 3 N 4 , cemented carbide, AlN, Mo, W are preferable.
【００１３】硬質炭素膜としては、ダイヤモンド，アモ
ルファスカーボン等がある。The hard carbon film includes diamond, amorphous carbon and the like.
【００１４】本発明における中間層としては、ダイヤモ
ンドと、炭化珪素または炭化ホウ素を含有するものであ
る。この中間層の厚みとしては、０．１〜２．０μｍ、
特に、０．２〜１．０μｍが望ましい。本発明の硬質炭
素膜被覆部材における中間層は、図１に示すように、ダ
イヤモンド１が基体２表面に島状に分布しており、この
状態でダイヤモンドが成長し、その回りが炭化珪素また
は炭化ホウ素となっている。ダイヤモンド１は硬質炭素
膜３と連続している。尚、符号４は炭化珪素または炭化
ホウ素を示す。The intermediate layer in the present invention contains diamond and silicon carbide or boron carbide. The thickness of this intermediate layer is 0.1 to 2.0 μm,
Particularly, 0.2 to 1.0 μm is desirable. As shown in FIG. 1, in the intermediate layer of the hard carbon film-coated member of the present invention, diamonds 1 are distributed on the surface of the substrate 2 in an island shape. It is boron. The diamond 1 is continuous with the hard carbon film 3. Reference numeral 4 represents silicon carbide or boron carbide.
【００１５】前記炭素含有ガスとしては、例えば、メタ
ン，エタン，プロパンなどのアルカン類、エチレン，プ
ロピレンなどのアルケン類、アセチレンなどのアルキン
類、ベンゼンなどの芳香族炭化水素類、シクロプロパン
などのシクロパラフィン類、シクロペンテンなどのシク
ロオレフィン類などが挙げられる。また一酸化炭素、二
酸化炭素，メチルアルコール，エチルアルコール，アセ
トンなどの含酸素炭素化合物、モノ（ジ、トリ）メチル
アミン、モノ（ジ、トリ）エチルアミンなどの含窒素炭
素化合物なども炭素源ガスとして使用することができ
る。これらは一種単独で用いることもできるし、二種以
上で併用することもできる。Examples of the carbon-containing gas include alkanes such as methane, ethane and propane, alkenes such as ethylene and propylene, alkynes such as acetylene, aromatic hydrocarbons such as benzene and cyclones such as cyclopropane. Examples thereof include paraffins and cycloolefins such as cyclopentene. In addition, carbon monoxide, carbon dioxide, oxygen-containing carbon compounds such as methyl alcohol, ethyl alcohol, and acetone, and nitrogen-containing carbon compounds such as mono (di, tri) methylamine and mono (di, tri) ethylamine are also used as carbon source gases. Can be used. These may be used alone or in combination of two or more.
【００１６】前記珪素含有ガスとしては、四フッ化ケイ
素，四塩化ケイ素，四臭化ケイ素などのハロゲン化物、
二酸化ケイ素などの酸化物の他に、モノ（ジ，トリ，テ
トラ，ペンタ）シラン，モノ（ジ，トリ，テトラ）メチ
ルシランなどのシラン化合物、トリメチルシラノールな
どのシラノール化合物などが挙げられる。As the silicon-containing gas, halides such as silicon tetrafluoride, silicon tetrachloride and silicon tetrabromide,
In addition to oxides such as silicon dioxide, silane compounds such as mono (di, tri, tetra, penta) silane, mono (di, tri, tetra) methylsilane, silanol compounds such as trimethylsilanol, etc. may be mentioned.
【００１７】前記ホウ素含有ガスとしては、ジボラン，
テトラボランなどのボラン、メチルジボラン，ジメチル
ジボランなどのボラン誘導体、三フッ化ホウ素，三塩化
ホウ素などのハロゲン化ホウ素、ホウ酸などの酸素含有
ホウ素などが挙げられる。これらは一種単独で用いるこ
ともできるし、二種以上で併用することもできる。As the boron-containing gas, diborane,
Examples thereof include boranes such as tetraborane, borane derivatives such as methyldiborane and dimethyldiborane, boron halides such as boron trifluoride and boron trichloride, and oxygen-containing boron such as boric acid. These may be used alone or in combination of two or more.
【００１８】[0018]
【作用】本発明の硬質炭素膜被覆部材では、少なくとも
ダイヤモンドと、炭化珪素または炭化ホウ素を含有する
中間層を形成したが、このような膜構成により硬質炭素
膜と基体との密着性が向上する理由は次のように考えら
れる。In the hard carbon film-coated member of the present invention, at least diamond and the intermediate layer containing silicon carbide or boron carbide are formed. With such a film structure, the adhesion between the hard carbon film and the substrate is improved. The reason is considered as follows.
【００１９】即ち、原子同士は電子を介在することによ
り結合されているが、一般に、原子間の電子が一方に存
在して電気的な結び付きにより結合しているイオン結合
よりも、電子を双方の原子で共有している共有結合の方
が強い結合力を持つ。ダイヤモンドは炭素の共有結合に
より構成されているので強い結合力を有している。従っ
て、ダイヤモンドと異種化合物との密着性を向上させる
ためには、類似の結合様式である共有結合性の化合物で
あることが望ましいと考えられる。またダイヤモンドの
成分である炭素を含む化合物の方がより整合性がよいと
思われる。炭素化合物は数多く存在するが、その多くは
イオン性結合を主体としたものである。共有結合性炭化
物としては炭化珪素と炭化ホウ素が挙げられる。これら
の化合物とダイヤモンドが混在する層を硬質炭素膜と基
体との間に形成することにより、硬質炭素膜と基体との
密着性が向上する。That is, although atoms are bonded to each other by interposing electrons, in general, electrons are more likely to be bonded to each other than to an ionic bond in which electrons between atoms are present on one side and are bonded by an electrical connection. A covalent bond shared by atoms has stronger binding force. Since diamond is composed of carbon covalent bonds, it has a strong bonding force. Therefore, in order to improve the adhesion between diamond and a different kind of compound, it is considered that a compound having a similar bond mode and a covalent bond is desirable. In addition, the compound containing carbon, which is a component of diamond, seems to be more consistent. There are many carbon compounds, but most of them are mainly composed of ionic bonds. Examples of the covalent bond carbide include silicon carbide and boron carbide. By forming a layer in which these compounds and diamond are mixed between the hard carbon film and the base, the adhesion between the hard carbon film and the base is improved.
【００２０】また、ダイヤモンドと、炭化珪素または炭
化ホウ素は分離して存在しているのではなく、ダイヤモ
ンドの周りを炭化珪素，炭化ホウ素が取り囲むような構
造、即ち、図１に示すように、ダイヤモンドが基体表面
に島状に分布することにより、いわゆるアンカー効果が
期待でき、硬質炭素膜と基体との密着性が向上する。Further, the diamond and the silicon carbide or the boron carbide do not exist separately, but a structure in which the silicon carbide and the boron carbide surround the diamond, that is, as shown in FIG. Is distributed on the surface of the substrate in an island shape, so that a so-called anchor effect can be expected, and the adhesion between the hard carbon film and the substrate is improved.
【００２１】また、本発明の硬質炭素膜被覆部材は、気
相成長法において、基体の設置された反応室内に、原料
ガスとして水素と炭素含有ガスを導入してダイヤモンド
を基体表面に生成させた後、さらに反応室内に珪素含有
ガスまたはホウ素含有ガスを導入してダイヤモンドを成
長させるとともに、このダイヤモンドの回りに炭化珪素
または炭化ホウ素を析出させて中間層を形成し、さら
に、珪素含有ガスまたはホウ素含有ガスの供給を停止す
ることにより中間層の表面に硬質炭素膜を形成すること
ができる。このようにガスの供給量をコントロールする
だけで本発明の硬質炭素膜被覆部材を合成することがで
きるので、生産性も従来と変わらずに密着性のよい部材
を提供することができる。本発明では、特に、中間層を
形成する際に、先ず島状のダイヤモンドを生成させるこ
とに特徴がある。Further, in the hard carbon film-coated member of the present invention, in the vapor phase growth method, hydrogen and a carbon-containing gas were introduced as raw material gases into the reaction chamber in which the substrate was installed to generate diamond on the surface of the substrate. After that, a silicon-containing gas or a boron-containing gas is further introduced into the reaction chamber to grow diamond, and silicon carbide or boron carbide is deposited around the diamond to form an intermediate layer. By stopping the supply of the contained gas, the hard carbon film can be formed on the surface of the intermediate layer. Since the hard carbon film-coated member of the present invention can be synthesized simply by controlling the gas supply amount in this manner, it is possible to provide a member having good adhesion with productivity unchanged from the conventional one. The present invention is particularly characterized in that island-shaped diamonds are first generated when the intermediate layer is formed.
【００２２】さらに、中間層を形成する際に、水素と炭
素含有ガス並びに珪素含有ガスまたはホウ素含有ガスを
反応炉内に導入するが、珪素含有ガスまたはホウ素含有
ガスの量を、時間の経過とともに減少させることによ
り、ダイヤモンド相の占める割合が次第に多くし、表面
の硬質炭素膜との付着を向上することができる。Further, when the intermediate layer is formed, hydrogen and a carbon-containing gas and a silicon-containing gas or a boron-containing gas are introduced into the reaction furnace, and the amount of the silicon-containing gas or the boron-containing gas is changed over time. By decreasing the ratio, the proportion of the diamond phase gradually increases, and the adhesion to the hard carbon film on the surface can be improved.
【００２３】[0023]
【実施例】反応炉内にＳｉ3 Ｎ4 を主成分とし、Ｙ2 Ｏ
3 を２重量％，Ａｌ2 Ｏ3 を５重量％含有する焼結体か
らなる基板を収容するとともに、表１に示すような種
類，流量の原料ガスを反応炉内に導入して、反応室内圧
力を０．３Ｔｏｒｒに設定した。ＥＣＲプラズマＣＶＤ
法により最大２Ｋガウスの強度の磁場を印加させ、マイ
クロ波出力３．５ｋＷの条件で成膜を行った。成膜時の
原料ガス流量及び圧力を表１に示したように成膜時間の
経過とともに変化させた。このようにして作製した試料
を本発明試料１Ａとする。[Examples] Si 3 N 4 was used as a main component in a reaction furnace, and Y 2 O
A substrate made of a sintered body containing 2 % by weight of 3 and 5% by weight of Al 2 O 3 is housed, and the raw material gas of the kind and flow rate shown in Table 1 is introduced into the reaction furnace to The pressure was set to 0.3 Torr. ECR plasma CVD
A magnetic field having a maximum intensity of 2 K gauss was applied by the method to form a film under the condition of a microwave output of 3.5 kW. The raw material gas flow rate and pressure during film formation were changed with the lapse of film formation time as shown in Table 1. The sample manufactured in this manner is referred to as sample 1A of the invention.
【００２４】[0024]
【表１】 [Table 1]
【００２５】また、基体を超硬合金，モリブデン，チタ
ンに代えて、同様の手法でコーテイングを行った。得ら
れた硬質炭素膜被覆部材をそれぞれ、本発明試料２Ａ，
３Ａ，４Ａとする。また成膜時の原料ガスの種類、流量
及び圧力を成膜時間経過とともに表２のようにして、試
料２Ａ，３Ａ，４Ａと同様の手法で作製した試料を、本
発明試料１Ｂ，２Ｂ，３Ｂ，４Ｂとする。Further, the substrate was replaced with cemented carbide, molybdenum, and titanium, and coating was performed by the same method. The obtained hard carbon film-coated members were respectively subjected to Inventive Sample 2A,
3A and 4A. In addition, samples prepared by the same method as Samples 2A, 3A, and 4A in the same manner as Samples 2A, 3A, and 4A are shown in Table 2 with respect to the type, flow rate, and pressure of the raw material gas at the time of film formation. , 4B.
【００２６】[0026]
【表２】 [Table 2]
【００２７】得られた膜をＸ線回折により分析した結
果、本発明試料Ａグループではいずれの膜もダイヤモン
ドと炭化珪素の存在が、本発明試料Ｂグループではいず
れの膜もダイヤモンドと炭化ホウ素の存在が確認され
た。膜厚はいずれのサンプルも 6μｍであった。As a result of analyzing the obtained film by X-ray diffraction, the presence of diamond and silicon carbide was observed in all the films in the sample A group of the present invention, and the presence of diamond and boron carbide was observed in the all samples in the sample B group of the present invention. Was confirmed. The film thickness of all samples was 6 μm.
【００２８】また珪素源またはホウ素源となるガスを導
入せずに、表１に記載するような原料ガスで作製した試
料をそれぞれ比較試料１Ｃ，２Ｃ，３Ｃ，４Ｃとする。Samples prepared by using the raw material gases shown in Table 1 without introducing a gas serving as a silicon source or a boron source are referred to as comparative samples 1C, 2C, 3C and 4C, respectively.
【００２９】本発明の硬質炭素膜被覆部材である試料Ａ
グループおよび試料Ｂグループでは、図１に示したよう
に、タイヤモンドが基体に島状に析出していることをＴ
ＥＭ（透過電子顕微鏡）により確認した。Sample A which is a hard carbon film coated member of the present invention
In the group B and the sample B group, as shown in FIG.
It was confirmed by EM (transmission electron microscope).
【００３０】得られた硬質炭素膜被覆部材に対して、被
覆部材の摺動特性（ディスクの比摩耗量、摩擦係数）を
ピンオンディスク法により評価した。摺動試験の条件
は、室温、大気中、無潤滑において、荷重３９．２Ｎ、
摺動速度２ｍ／ｓｅｃ、２４時間で行った。ピンはアル
ミニウム製のものを用いた。ビッカース硬度計を用い
て、膜に荷重をかけて基体表面から膜を浮かせ、膜に剥
離が生じはじめた荷重（臨界荷重）を測定し、膜と基体
との付着力を評価した。結果を表３に示す。With respect to the obtained hard carbon film coated member, the sliding characteristics of the coated member (specific wear amount of disk, friction coefficient) were evaluated by the pin-on-disk method. The sliding test conditions were room temperature, air, and no lubrication under a load of 39.2N,
The sliding speed was 2 m / sec and the time was 24 hours. The pins used were made of aluminum. Using a Vickers hardness meter, a load was applied to the film to float the film from the surface of the substrate, and the load (critical load) at which peeling of the film began to occur was measured to evaluate the adhesive force between the film and the substrate. The results are shown in Table 3.
【００３１】[0031]
【表３】 [Table 3]
【００３２】表３において比較試料Ｃグループはいずれ
も摺動試験開始後一時間以内で膜の剥離が生じたので、
途中で試験を中止した。膜の剥離が生じたことから摺動
部材としては膜と基板との密着性が充分でないことが判
る。また臨界荷重も本発明試料に比べてきわめて低い値
である。本発明試料Ａ，Ｂグループはいずれも摺動試験
において剥離は起こらず、ディスクの比摩耗量もきわめ
て低い。以上の結果から本発明試料が耐摩耗性及び摺動
特性に優れ、さらに、基体と硬質炭素膜との付着性が優
れていることがわかる。尚、Ｄグループでは、表１およ
び表２において０〜１時間のダイヤモンドの析出工程を
除いた場合であり、Ｄグループでは、中間層としてダイ
ヤモンドと炭化珪素または炭化ホウ素とを含有するが、
ダイヤモンドが島状に分布しておらず、この場合には基
板の密着性が充分ではなく、また比摩耗量もきわめて多
いことが判る。In Table 3, the comparative sample C groups all peeled off the film within one hour after the start of the sliding test.
The test was canceled on the way. Since the peeling of the film occurred, it was found that the adhesion between the film and the substrate was not sufficient for the sliding member. The critical load is also extremely low compared to the sample of the present invention. In Samples A and B of the present invention, peeling did not occur in the sliding test, and the specific wear amount of the disk was extremely low. From the above results, it can be seen that the sample of the present invention has excellent wear resistance and sliding characteristics, and further has excellent adhesion between the substrate and the hard carbon film. In the D group, the diamond precipitation step of 0 to 1 hour in Table 1 and Table 2 is excluded, and in the D group, the intermediate layer contains diamond and silicon carbide or boron carbide.
It is understood that the diamond is not distributed in an island shape, in which case the adhesion of the substrate is not sufficient and the specific wear amount is extremely large.
【００３３】[0033]
【発明の効果】以上、詳述したように本発明の硬質炭素
膜被覆部材は硬質炭素膜と基体との付着力に優れ、また
膜自体が耐摩耗性に優れていることから、摺動部材、耐
摩耗性部材等に適していることが判る。また本発明は付
着力に優れていることから硬質炭素膜の表面の研磨を容
易に行うことができ、表面研磨により得られる硬質炭素
膜表面は、硬度と光沢の良さから装飾品の保護膜として
利用できる。製法上においても硬質炭素膜形成工程以外
に格別な工程を必要としないために生産性も優れる。As described above in detail, the hard carbon film-coated member of the present invention has excellent adhesion between the hard carbon film and the substrate, and the film itself has excellent wear resistance. It can be seen that it is suitable for wear-resistant members and the like. Further, the present invention can easily polish the surface of the hard carbon film because of its excellent adhesion, and the surface of the hard carbon film obtained by surface polishing is used as a protective film for ornaments because of its hardness and gloss. Available. Also in the manufacturing method, the productivity is excellent because no special step other than the hard carbon film forming step is required.
【図１】本発明の硬質炭素膜被覆部材の縦断面図を示
す。FIG. 1 shows a vertical sectional view of a hard carbon film-coated member of the present invention.
１・・・ダイヤモンド ２・・・基体 ３・・・硬質炭素膜 ４・・・炭化珪素，炭化ホウ素 1 ... Diamond 2 ... Substrate 3 ... Hard carbon film 4 ... Silicon carbide, boron carbide
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｆ１６Ｃ 33/24 Ａ 7123−3Ｊ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location F16C 33/24 A 7123-3J
Claims (2)
炭素膜被覆部材において、前記硬質炭素膜と前記基体と
の間に、少なくとも島状に分布するダイヤモンドと、炭
化珪素または炭化ホウ素を含有する中間層を配したこと
を特徴とする硬質炭素膜被覆部材。1. A hard carbon film-coated member having a surface of a base material coated with a hard carbon film, wherein at least island-shaped diamond and silicon carbide or boron carbide are provided between the hard carbon film and the base material. A hard carbon film-covered member having an intermediate layer contained therein.
有ガスを反応室内に導入し、気相成長法により基板表面
にダイヤモンドを島状に析出させた後、さらに珪素含有
ガスまたはホウ素含有ガスを前記反応室内に導入するこ
とによりダイヤモンドと、炭化珪素または炭化ホウ素を
同時に析出させて、前記基板表面に少なくともダイヤモ
ンドと、炭化珪素または炭化ホウ素を含有する中間層を
形成し、さらに珪素含有ガスまたはホウ素含有ガスの供
給を停止することにより、前記中間層表面に前記硬質炭
素膜を形成することを特徴とする硬質炭素膜被覆部材の
製造方法。2. As a raw material gas, at least hydrogen and a carbon-containing gas are introduced into the reaction chamber, and diamond is deposited in an island shape on the surface of the substrate by a vapor deposition method, and then a silicon-containing gas or a boron-containing gas is further added. By introducing into the reaction chamber, diamond and silicon carbide or boron carbide are simultaneously deposited to form an intermediate layer containing at least diamond and silicon carbide or boron carbide on the surface of the substrate, and further containing silicon-containing gas or boron-containing gas. A method for manufacturing a hard carbon film-coated member, characterized in that the hard carbon film is formed on the surface of the intermediate layer by stopping the supply of gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23486494A JP3273106B2 (en) | 1994-09-29 | 1994-09-29 | Hard carbon film coated member and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23486494A JP3273106B2 (en) | 1994-09-29 | 1994-09-29 | Hard carbon film coated member and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0892744A true JPH0892744A (en) | 1996-04-09 |
| JP3273106B2 JP3273106B2 (en) | 2002-04-08 |
Family
ID=16977545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23486494A Expired - Fee Related JP3273106B2 (en) | 1994-09-29 | 1994-09-29 | Hard carbon film coated member and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3273106B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH106222A (en) * | 1996-06-17 | 1998-01-13 | Kyocera Corp | Liquid injection nozzle |
| JPH1149506A (en) * | 1997-07-31 | 1999-02-23 | Kyocera Corp | Ornamental member |
| JP2005083339A (en) * | 2003-09-11 | 2005-03-31 | Hitachi Home & Life Solutions Inc | Sliding device, its manufacturing method and refrigerant compressor |
| JP6095090B2 (en) * | 2014-04-24 | 2017-03-15 | 国立大学法人東北大学 | Sliding method, manufacturing method of sliding structure, sliding structure and device |
| JP2018030211A (en) * | 2016-08-25 | 2018-03-01 | 住友電工ハードメタル株式会社 | Cutting tool |
-
1994
- 1994-09-29 JP JP23486494A patent/JP3273106B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH106222A (en) * | 1996-06-17 | 1998-01-13 | Kyocera Corp | Liquid injection nozzle |
| JPH1149506A (en) * | 1997-07-31 | 1999-02-23 | Kyocera Corp | Ornamental member |
| JP2005083339A (en) * | 2003-09-11 | 2005-03-31 | Hitachi Home & Life Solutions Inc | Sliding device, its manufacturing method and refrigerant compressor |
| JP6095090B2 (en) * | 2014-04-24 | 2017-03-15 | 国立大学法人東北大学 | Sliding method, manufacturing method of sliding structure, sliding structure and device |
| JPWO2015163389A1 (en) * | 2014-04-24 | 2017-04-20 | 国立大学法人東北大学 | Sliding method, manufacturing method of sliding structure, sliding structure and device |
| JP2018030211A (en) * | 2016-08-25 | 2018-03-01 | 住友電工ハードメタル株式会社 | Cutting tool |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3273106B2 (en) | 2002-04-08 |
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