JPH0887107A - Positive photosensitive composition - Google Patents

Abstract

PURPOSE: To obtain a chemical amplification type positive photo-resist having a high γ-value and applicable to half-micron lithography using light in a far UV region by incorporating a polyoxyalkylene compd. CONSTITUTION: A polyoxyalkylene compd. is incorporated into a positive photosensitive compsn. contg. 100 pts.wt. alkali-soluble resin, 0.005-30 pts.wt. optical acid generating agent and 1-70 pts.wt. compd. which is made alkali-soluble by a reaction with an acid generated under light as essential components. The polyoxyalkylene compd. is not especially limited but it is desirable that the compd. has >=140 deg.C b.p. under atmospheric pressure so as to prevent volatilization at the time of baking in a resist image forming process. The resultant photosensitive compsn. has high resolving power and is applicable to the production of a semiconductor integrated circuit having a high degree of integration.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a positive photosensitive composition sensitive to radiation. In particular, the present invention relates to an improved chemically amplified resist exhibiting high resolution for short wavelength light.

[0002]

2. Description of the Related Art High integration of semiconductor integrated circuits has been promoted at a speed four times higher in three years as is generally said. For example, dynamic random access memory (DR) has been developed.
Taking AM as an example, at present, full-scale production of a device having a storage capacity of 4 Mbits has started. Along with this, the demand for photolithography technology, which is indispensable for the production of integrated circuits, has been increasing year by year. For example, it is expected that 0.8 μm level lithography technology will be required for the production of 4 Mbit DRAM, and 0.5 μm level lithography technology will be required for the highly integrated 16 MDRAM. There is.
Along with this, the wavelength used for exposing the resist,
From the g-line (436 nm) to the i-line (365 nm) of a mercury lamp,
Further, the wavelength is being shortened to KrF excimer laser light (248 nm).

However, the conventional positive photoresist using naphthoquinonediazide as a photosensitizer has a very low transmittance for far-ultraviolet light such as KrF excimer laser light, resulting in low sensitivity and low resolution. I will end up. As a new positive resist for solving such a problem, various chemically amplified positive photoresists have been proposed, which consist of a photo-acid generator and a compound whose solubility in an alkali developing solution is increased by an acid-catalyzed reaction. There is. Even in such a chemically amplified positive photoresist, in order to obtain a high resolution, it is necessary to exhibit a high γ value as in the case of a conventional positive photoresist using naphthoquinonediazide as a photosensitizer.

[0004]

SUMMARY OF THE INVENTION The object of the present invention is to solve the problems of the prior art as described above and to cope with half-micron lithography using light in the far ultraviolet region.
It is to provide a chemically amplified positive photoresist having a value.

[0005]

In order to increase the γ value of a chemically amplified positive photoresist, the acid generated by exposure acts effectively and increases the alkali solubility change of the resist film with respect to the exposure dose. It is necessary.

As a result of intensive studies based on the above idea, it was found that a chemically amplified positive photoresist composition having a significantly improved γ value can be obtained by containing a compound having a specific structure. Came to.

That is, the gist of the present invention is to provide a positive-type photosensitive composition containing an alkali-soluble resin, a photo-acid generator and a compound which becomes alkali-soluble by reacting with an acid generated by light as a main component, and a polyoxyalkylene compound. The positive photosensitive composition is characterized by containing:

The present invention will be described in detail below. In the present invention, the polyoxyalkylene compound contained is not particularly limited, but it is desirable that it has a boiling point of 140 ° C. or higher under normal pressure in order to prevent volatilization during baking in the image forming step of the resist. Further, as particularly preferable polyoxyalkylene compounds, those having a repeating structural unit represented by the following general formula (1) can be mentioned. ^{-C (R 1, R 2)} -C (R 3, R 4) -O- (1) ( ^{wherein, R 1, R 2, R} 3, R 4 is a hydrogen atom, an alkyl group, a cycloalkyl group, Indicates an aryl group, an aralkyl group or an alkoxy group. In the case of an aryl group or an aralkyl group, the hydrogen atom of the aryl group part may be substituted with an alkyl group, and both ends of the main chain are not bonded to each other to form a chain compound. Or both ends of the main chain may be bonded to each other to form a cyclic compound, and in the case of a chain compound, the both ends are bonded to the same group as R ^{1 to} R ⁴ . In the case of compounds, R ¹ and R ^{3 in} some of the structural units
May combine with each other to form an aryl group or a cycloalkyl group. )

In the present invention, examples of the polyoxyalkylene compound contained include polyethers and crown ethers. Specific examples of the polyethers include diethylene glycol di-n-butyl ether and diethylene glycol mono-n-butyl ether.
Diethylene glycol mono-n-hexyl ether, diethylene glycol mono-n-dodecyl ether and other diethylene glycol ethers, triethylene glycol di-n-butyl ether, triethylene glycol mono-n- Butyl ether, triethylene glycol mono-n-hexyl ether, triethylene glycol mono-n-dodecyl ether and other triethylene glycol ethers, tetraethylene glycol, tetraethylene glycol di- Tetraethylene glycols such as n-butyl ether, tetraethylene glycol mono-n-butyl ether, tetraethylene glycol mono-n-hexyl ether, tetraethylene glycol mono-n-dodecyl ether, pentaethylene Glycol, pentaethyl Glycol monomethyl ether,
Pentaethylene glycols such as pentaethylene glycol mono-n-dodecyl ether, polyethylene oxide, polyethylene glycol, polypropylene glycol, and other polyalkylene glycols having a degree of polymerization of about 2 to 300 and alkyl ethers thereof are mentioned.
Examples of crown ethers include 12-crown-4, 15-crown-5, 18-crown-
6, benzo-15-crown-5, benzo-18-crown-6, dibenzo-18-crown-6, dibenzo-
24-crown-8, dibenzo-30-crown-1
0, dicyclohexano-18-crown-6, dicyclohexano-24-crown-8 and the like.

In the case of polyethers, the weight average molecular weight is usually 100 or more and 100,000 or less, preferably 1
It is from 00 to 20,000, and more preferably from 200 to 2,000. When the weight average molecular weight is small, there is no effect of improving the γ value, and when the weight average molecular weight is large, the solubility of the resist in a solvent decreases. In the case of crown ether, the number of repeating structural units in the general formula (1) is 4 or more and 1
It is preferably 0 or less. If the number of repeating structural units deviates from this range, the effect of sufficiently improving the γ value cannot be obtained.

In the present invention, as the alkali-soluble resin, any one can be used so long as only the exposed portion becomes alkali-soluble at the time of exposure and is dissolved in the alkali developing solution at the time of development. From the viewpoint of its operation, there are the following two cases. (A) The resin itself does not change before and after exposure, but the resist film becomes alkali-insoluble due to the presence of a substance that inhibits alkali solubility of the resin before exposure, and inhibits alkali solubility of the resin after exposure. The substance is changed into an alkali-soluble substance by the catalytic action of the acid generated by exposure, so that the resist film becomes alkali-soluble. (B) In the alkali-soluble resin, some or all of the functional groups that impart solubility are insolubilized by forming a derivative in which a protecting group that makes the alkali insoluble is substituted, and by the catalytic action of the acid generated by exposure, It becomes the original alkali-soluble resin. As a preferred alkali-soluble resin,
Novolac resin, polyacrylic acid, polyvinyl alcohol, polyvinyl phenol, or derivatives thereof are used. Of these, particularly preferred is polyvinylphenol and a derivative in which a part or all of the hydroxyl group thereof is substituted with a protective group that makes it insoluble in alkali. That is, the “alkali-soluble resin” in the claims includes an alkali-insoluble derivative as long as it returns to the original alkali-soluble resin by the catalytic action of an acid as described in (b) above.

In the case of polyvinylphenol, specifically, o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, 2- (o-hydroxyphenyl) propylene, 2- (m-hydroxyphenyl).
A resin obtained by polymerizing hydroxystyrenes such as propylene and 2- (p-hydroxyphenyl) propylene alone or in combination of two or more in the presence of a radical polymerization initiator or a cationic polymerization initiator is used. After the polymerization, part or all of the hydroxyl groups of the resin may be converted into, for example, tert-butoxycarbonyloxy and used as an alkali-insoluble derivative. The derivative may be an alkali-insoluble substance obtained by not only such carbonic esterification but also carboxylic acid esterification, etherification and the like. Also, hydrogenated products may be used to reduce the absorbance of the resin after polymerization.

The molecular weight is 1,000 to 100,000, preferably 1, in terms of polystyrene equivalent (GPC measurement).
The thing of 500-50,000 is used. If the molecular weight of the alkali-soluble resin is smaller than this range, a sufficient coating film as a resist cannot be obtained, and if it is larger than this range, the solubility of the unexposed portion in an alkali developing solution becomes small and a resist pattern is obtained. I can't.

As the photo-acid generator, any photo-acid generator can be used as long as it can generate an acid by the light used for exposure. Specifically, for example, halogen-containing s-triazine derivatives such as tris (trichloromethyl) -s-triazine and 2,4-bis (tribromomethyl) -6-p-methoxyphenyl-s-triazine; ，
Halogen-substituted paraffin hydrocarbons such as 3,4-tetrabromobutane, 1,1,2,2-tetrabromoethane, carbon tetrabromide, and iodoform, and halogen-substituted paraffin hydrocarbons such as hexabromocyclohexane, hexachlorocyclohexane, and hexabromocyclododecane. Cycloparaffinic hydrocarbons, halogen-containing benzene derivatives such as bis (trichloromethyl) benzene and bis (tribromomethyl) benzene, halogen-containing sulfone compounds such as tribromomethylphenyl sulfone, trichloromethylphenyl sulfone and 2,3-dibromosulfolane , Tris (2,3-
Halogen-containing isocyanurate derivatives such as dibromopropyl) isocyanurate, triphenylsulfonium chloride, triphenylsulfonium methanesulfonate, triphenylsulfonium trifluoromethylsulfonate, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium tetrafluoroborate, triphenylsulfonium Sulfonium salts such as hexafluoroarsenate and triphenylsulfonium hexafluorophosphonate, diphenyliodonium trifluoromethylsulfonate, diphenyliodonium p-toluenesulfonate, diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluoroarsenate, diphenyliodonium hexafluoro Iodonium salts such as phosphonates, methyl p-toluenesulfonate, ethyl p-toluenesulfonate, butyl p-toluenesulfonate, phenyl p-toluenesulfonate, 1,2,3-tri (p-toluenesulfonyl) benzene, p -Toluenesulfonate benzoin ester, ethyl methanesulfonate, butyl methanesulfonate, 1,2,3-tri (methanesulfonyl) benzene, phenyl methanesulfonate, methanesulfonate benzoin ester, methyl trifluoromethanesulfonate, trifluoromethanesulfone Ethyl acetate, butyl trifluoromethanesulfonate, 1,2,3-tri (trifluoromethanesulfonyl) benzene, phenyl trifluoromethanesulfonate, trifluoromethanesulfonic acid benzoin ester, etc. Sulfonic acid esters, disulfones, such as diphenyl disulfone, di-sulfonic diazide such as (phenylsulfonyl) diazomethane, etc. o- nitrobenzyl esters such as o- nitrobenzyl -p- toluenesulfonate and the like.

As the compound which becomes alkali-soluble by reacting with an acid generated by light, for example, carboxylic acid esters, carbonic acid esters, ethers, acetals and the like are used. Of these, carboxylic acid esters are particularly preferable. Specifically, as the carboxylic acid ester, methanol, ethanol, propanol, butanol, glycol, aliphatic alcohol such as polyvinyl alcohol or phenol, cresol,
Aromatic alcohols such as xylenol, resorcinol, pyrogallol, naphthol, bisphenol A and polyvinylphenol, and acetic acid, propionic acid, butanoic acid,
Examples thereof include esters with carboxylic acids such as polyacrylic acid, polymethacrylic acid and benzoic acid.

Examples of the carbonic acid esters include aliphatic alcohols such as methanol, ethanol, propanol, butanol, glycol and polyvinyl alcohol, or phenol, cresol, xylenol, resorcinol,
Examples thereof include compounds obtained by substituting the hydroxyl groups of aromatic alcohols such as pyrogallol, naphthol, bisphenol A, and polyvinylphenol with methoxycarbonyloxy groups, ethoxycarbonyloxy groups, propoxycarbonyloxy groups, butoxycarbonyloxy groups, and the like.

Examples of ethers include aliphatic alcohols such as methanol, ethanol, propanol, butanol, glycol and polyvinyl alcohol, or hydroxyl groups of aromatic alcohols such as phenol, cresol, xylenol, resorcinol, pyrogallol, naphthol, bisphenol A and polyvinylphenol. Examples thereof include compounds in which is substituted with a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a tetrahydrofuranyl group, a tetrahydropyranyl group and the like.

The acetals include aldehydes such as formaldehyde, acetaldehyde, propionaldehyde and butyraldehyde, and aliphatic alcohols such as methanol, ethanol, propanol, butanol, glycol and polyvinyl alcohol, or phenol, cresol, xylenol, resorcinol and pyrogallol. And acetal compounds derived from aromatic alcohols such as naphthol, bisphenol A, and polyvinylphenol.

In the photosensitive composition of the present invention, the photo-acid generator is 0.0 per 100 parts by weight of the alkali-soluble resin.
05 to 30 parts by weight, preferably 0.01 to 20 parts by weight,
1 to 70 parts by weight, preferably 5 to 50 parts by weight of a compound which becomes alkali-soluble by reacting with an acid generated by light
The polyoxyethylene compound is used in an amount of 0.001 to 30 parts by weight, preferably 0.005 to 20 parts by weight.

When the amount of the photo-acid generator is less than this range, the sensitivity becomes very low and it is not practical. If the amount of the photo-acid generator is larger than this range, the transparency of the resist film is lowered by the photo-acid generator, and the resist pattern becomes trapezoidal and the resolution is lowered. If the amount of the compound that becomes alkali-soluble by reacting with the acid generated by light is less than this range, a sufficient dissolution rate change cannot be obtained between the exposed part and the unexposed part, and a good resist pattern can be obtained. Absent. If the amount of the compound that becomes alkaline-soluble by reacting with the acid generated by light is larger than this range, the coating properties of the resist will deteriorate. When the content of the polyoxyethylene compound is less than this range, the effect of improving the γ value is small. Further, if the content of the polyoxyethylene compound is more than this range, the sensitivity is lowered.

The photosensitive composition of the present invention is usually used by dissolving these components in a suitable solvent. The solvent is not particularly limited as long as it has a sufficient dissolving ability with respect to the alkali-soluble resin and the photo-acid generator and gives a good coating property. Specifically, ketone-based solvents such as 2-hexanone, cyclohexanone, methyl amyl ketone, and 2-heptanone, methyl cellosolve, ethyl cellosolve,
Cellosolve-based solvents such as methyl cellosolve acetate and ethyl cellosolve acetate, diethyl oxalate,
Ethyl pyruvate, ethyl-2-hydroxybutyrate, ethyl acetoacetate, butyl acetate, amyl acetate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, ester solvents such as methyl 3-methoxypropionate, propylene glycol monomethyl Propylene glycol solvents such as ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether acetate, dipropylene glycol dimethyl ether, etc., or mixed solvents thereof, or further aromatic hydrocarbons. And the like. The use ratio of the solvent is preferably in the range of 1 to 20 times as a weight ratio with respect to the total amount of solids in the photosensitizer composition.

When a resist pattern is formed on a semiconductor substrate using the positive photosensitive composition of the present invention, the positive photosensitive composition of the present invention dissolved in the above solvent is usually used for the semiconductor substrate. It can be used as a photoresist after being coated on the surface thereof, pre-baked, transferred a pattern by exposure, heated after exposure (post-exposure bake; PEB) and developed. The semiconductor substrate is
It is usually used as a semiconductor manufacturing substrate, and is a silicon substrate, a gallium arsenide substrate, or the like. A spin coater is usually used for coating, and light of 436 nm and 365 nm of a high pressure mercury lamp and 2 of a low pressure mercury lamp are used for exposure.
54nm or excimer laser as the light source 1
Light of 57 nm, 193 nm, 222 nm and 248 nm is preferably used. The light at the time of exposure may be broad instead of monochromatic light. Further, exposure by the phase shift method can also be applied.

The developer of the positive photoresist composition of the present invention contains sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate,
Inorganic alkalis such as ammonia water, ethylamine, n
-Primary amines such as propylamine, diethylamine, secondary amines such as di-n-propylamine, tertiary amines such as triethylamine, N, N-diethylmethylamine, tetramethylammonium hydroxide, It is possible to use a quaternary ammonium salt such as trimethylhydroxyethylammonium hydroxide, or a quaternary ammonium salt to which an alcohol, a surfactant or the like is added.

The positive photoresist composition of the present invention comprises
It is useful not only for VLSI production but also for general IC production, mask production, image formation, liquid crystal screen production, color filter production or offset printing.

[0025]

EXAMPLES Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited by the examples unless it exceeds the gist.

In the following examples and comparative examples, the γ value was evaluated as follows. That is, the photosensitive liquids prepared in Examples and Comparative Examples were spin-coated on a silicon substrate, and a hot plate was placed at 120 ° C. for 9 hours.
The resist film was baked for 0 second to form a resist film having a film thickness of 0.7 μm.
Output the resist film on this silicon substrate 0.28mW
After exposure was performed using light having a wavelength of 254 nm from a low-pressure mercury lamp of / cm @ 2, the exposure time was changed, and then the film was baked on a hot plate at 80 DEG C. for 90 seconds. After that, this resist film is replaced with tetramethylammonium hydroxide 2.3.
It was developed with an 8% by weight aqueous solution for 1 minute. By measuring the resist film thickness remaining after this development for each exposure time, take the ratio of this value and the resist film thickness before exposure, by plotting this ratio on the graph against the logarithm of the exposure dose, The γ value was evaluated. The formula used for this evaluation is as follows. The unit of the γ value is an unknown number. γ = 0.9 / (logE ₁ −logE ₂ ) In the formula, E ₁ is the minimum exposure amount required for the resist film thickness after development to be 0, and E ₂ is the resist film thickness after development. And the resist film thickness before exposure is 0.9.

[0027]

[Synthesis Example 1] Synthesis of alkali-soluble resin (tert-butoxycarbonyloxylated polynibiylphenol) Polyvinylphenol (weight average molecular weight: 500) was placed in a 1 L four-necked flask equipped with a nitrogen introduction tube, a stirrer, and a thermometer.
0) 124 g and acetone 500 mL were added and dissolved uniformly, then N, N-dimethylaminopyridine 0.2 g was added as a catalyst, and the mixture was heated to 40 ° C. in a water bath. To this was slowly added 50 g of di-tert-butyl-dicarbonate and stirring was continued for 4 hours. After the reaction, 9 mL of 36% concentrated hydrochloric acid was added to this reaction solution.
The polymer was recovered by pouring it into 5 L of ion-exchanged water.
This polymer was redissolved in acetone and reprecipitated in 4.5 L of ion-exchanged water to recover the polymer. This polymer was washed 4 times with 4 L of ion-exchanged water and then vacuum dried to obtain 130 g of tert-butoxycarbonyloxylated polyvinylphenol.

[0028]

[Synthesis Example 2] Synthesis of a compound (tert-butoxycarbonyloxylated bisphenol-A) that becomes alkali-soluble by reacting with an acid generated by light A 1-L four-necked flask equipped with a nitrogen introduction tube, a stirrer, and a thermometer was used. Tetrahydrofuran 400 mL, bisphenol A 48 g, 4-N, N-dimethylaminopyridine 0.
Add 17g, dissolve evenly, and use a water bath to
Heated to 0 ° C. In addition to this, di-tert-butyl-di-
100 g of carbonate was slowly added and stirring was continued for 4 hours. The reaction solution was poured into 1 L of ion-exchanged water to precipitate a white solid. This solid was washed with ion-exchanged water three times and dried in vacuum to obtain 70 g of tert-butoxycarbonyloxylated bisphenol-A.

[0029]

Example 1 1.0 g of the resin synthesized in Synthesis Example 1, 0.43 g of tert-butoxycarbonyloxylated bisphenol A synthesized in Synthesis Example 2, 0.07 g of triphenylsulfonium trifluoromethanesulfonate as a photoacid generator, and weight A resist photosensitive solution was prepared by mixing 0.023 g of polyethylene glycol having an average molecular weight of 200 and 4.6 g of propylene glycol monomethyl ether acetate. As a result of evaluating the γ value, a high value of 4.45 was obtained.

[0030]

Example 2 1.0 g of the resin synthesized in Synthesis Example 1, 0.43 g of tert-butoxycarbonyloxylated bisphenol A synthesized in Synthesis Example 2, 0.11 g of triphenylsulfonium trifluoromethanesulfonate as a photoacid generator, and weight A resist photosensitive solution was prepared by mixing 0.046 g of polyethylene glycol having an average molecular weight of 200 and 4.6 g of propylene glycol monomethyl ether acetate. As a result of evaluating the γ value, a high value of 4.53 was obtained.

[0031]

Example 3 1.0 g of the resin synthesized in Synthesis Example 1, 0.43 g of tert-butoxycarbonyloxylated bisphenol A synthesized in Synthesis Example 2 and 0.07 g of triphenylsulfonium trifluoromethanesulfonate as a photoacid generator, 12 -Crown-4 (0.043 g) and propylene glycol monomethyl ether acetate (4.6 g) were mixed to prepare a resist photosensitive solution. As a result of evaluating the γ value, a high value of 4.09 was obtained.

[0032]

Example 4 1.0 g of the resin synthesized in Synthesis Example 1, 0.43 g of tert-butoxycarbonyloxylated bisphenol A synthesized in Synthesis Example 2, and 0.07 g of triphenylsulfonium trifluoromethanesulfonate as a photoacid generator, 15 -Crown-5 (0.044 g) and propylene glycol monomethyl ether acetate (4.6 g) were mixed to prepare a resist photosensitive solution. As a result of evaluating the γ value, a high value of 4.19 was obtained.

[0033]

Comparative Example 1 1.0 g of the resin synthesized in Synthesis Example 1, 0.43 g of tert-butoxycarbonyloxylated bisphenol A synthesized in Synthesis Example 2, 0.07 g of triphenylsulfonium trifluoromethanesulfonate as a photoacid generator, and Propylene glycol monomethyl ether acetate (4.6 g) was mixed to prepare a resist photosensitive solution. As a result of evaluating the γ value, a value of 2.30 was obtained.

This value was extremely low as compared with the values shown in Examples 1 to 4 in the case of containing various polyoxyalkylene compounds. That is, when the polyoxyalkylene compound of the present invention was contained, the γ value was improved in all cases as compared with the case where the polyoxyalkylene compound of the present invention was not contained.

[0035]

According to the present invention, the .gamma.-value is remarkably improved for short wavelength light, and a highly integrated semiconductor integrated circuit as a chemically amplified positive photoresist having high resolution and capable of supporting half-micron lithography. It is extremely useful for production such as.

Claims (6)

[Claims] 1. A positive-type photosensitive composition containing an alkali-soluble resin, a photo-acid generator and a compound that becomes alkali-soluble by reacting with an acid generated by light as a main component, containing a polyoxyalkylene compound. And a positive photosensitive composition. 2. A compound 1 to be alkali-soluble by reacting with 0.005 to 30 parts by weight of a photo-acid generator and 100 parts by weight of an alkali-soluble resin and an acid generated by light.
70 parts by weight and polyoxyalkylene compound 0.00
The positive photosensitive composition according to claim 1, which comprises 1 to 30 parts by weight. 3. The positive photosensitive composition according to claim 1, wherein the polyoxyalkylene compound is a compound having a repeating structural unit represented by the following general formula (1). ^{-C (R 1, R 2)} -C (R 3, R 4) -O- (1) ( ^{wherein, R 1, R 2, R} 3, R 4 is a hydrogen atom, an alkyl group, a cycloalkyl group, Indicates an aryl group, an aralkyl group or an alkoxy group. In the case of an aryl group or an aralkyl group, the hydrogen atom of the aryl group part may be substituted with an alkyl group, and both ends of the main chain are not bonded to each other to form a chain compound. Or both ends of the main chain may be bonded to each other to form a cyclic compound, and in the case of a chain compound, the both ends are the same as those of R ^{1 to} R ⁴ with or without oxygen. In the case of a cyclic compound, R ¹ and R ³ may combine with each other to form an aryl group or a cycloalkyl group in the case of a cyclic compound.) 4. The positive-type photosensitive material according to claim 3, wherein the polyoxyalkylene compound is one or more compounds of polyethers or crown ethers and has a boiling point of 140 ° C. or higher at normal pressure. Sex composition. 5. The weight average molecular weight of the polyether is 1
The positive photosensitive composition according to claim 4, which is from 00 to 100,000. 6. The repeating number of the structural unit of the general formula (1) of the crown ethers is 4 or more and 10 or less.
The positive photosensitive composition described.