JPH0879002A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH0879002A JPH0879002A JP21145194A JP21145194A JPH0879002A JP H0879002 A JPH0879002 A JP H0879002A JP 21145194 A JP21145194 A JP 21145194A JP 21145194 A JP21145194 A JP 21145194A JP H0879002 A JPH0879002 A JP H0879002A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- piezoelectric substrate
- acoustic wave
- wave device
- surface acoustic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は弾性表面波（以下、ＳＡ
Ｗという。）装置に係り、特に高周波数振動子として使
用されるＳＡＷ共振器に適用する場合に好適な装置構造
に関する。BACKGROUND OF THE INVENTION The present invention relates to surface acoustic waves (hereinafter referred to as SA
It is called W. The present invention relates to a device, and particularly to a device structure suitable when applied to a SAW resonator used as a high frequency oscillator.
【０００２】[0002]
【従来の技術】従来、ＳＴカットの水晶基板の表面上に
相互に対向した一対の櫛歯電極から成るすだれ状電極変
換器(interdigital transducer：以下、ＩＤ変換器とい
う。）を構成したＳＡＷ共振器が製造されている。この
ＳＡＷ共振器は、ＩＤ変換器に導入された電気信号によ
り発生する弾性表面波を所定周期で形成された櫛歯電極
により共振させ、この共振周波数の電気信号を取り出す
ことにより基準振動子として機能するものである。この
場合、ＩＤ変換器の両側に所定の間隔で一対のグレーテ
ィング反射器（grating reflector:以下、ＧＴ反射器と
いう。）を形成すると、両ＧＴ反射器の間に弾性表面波
に対する共振空洞が形成され、この共振空洞に弾性表面
波の定在波が立つ。ＩＤ変換器はこの定在波と強く結合
するので、安定した振動子を構成することができる。2. Description of the Related Art Conventionally, a SAW resonator is provided which is composed of a pair of interdigital transducers (hereinafter referred to as an ID converter) composed of a pair of comb-teeth electrodes facing each other on the surface of an ST cut quartz substrate. Is manufactured. This SAW resonator functions as a reference oscillator by resonating a surface acoustic wave generated by an electric signal introduced into an ID converter with a comb-teeth electrode formed at a predetermined cycle and extracting an electric signal of this resonance frequency. To do. In this case, if a pair of grating reflectors (hereinafter referred to as GT reflectors) are formed on both sides of the ID converter at a predetermined interval, a resonance cavity for surface acoustic waves is formed between the GT reflectors. , A standing wave of surface acoustic wave stands in this resonance cavity. Since the ID converter is strongly coupled to this standing wave, a stable oscillator can be constructed.
【０００３】このＳＡＷ共振器は、水晶基板の寸法で振
動数が決定される通常の水晶振動子とは異なり、表面波
の共振を利用するため結晶の表面２０μｍ程度しか影響
を受けず、基板の厚さ等の制約がないので高周波数帯域
まで基本モード振動で駆動できるから、小型でスプリア
スモードの少ない圧電振動子を容易に実現できる。[0003] This SAW resonator, unlike a normal crystal oscillator whose frequency is determined by the size of the crystal substrate, uses the resonance of the surface wave and therefore is affected only by about 20 μm of the surface of the crystal. Since there is no restriction on the thickness and the like, it is possible to drive up to the high frequency band by the fundamental mode vibration, so that it is possible to easily realize a small-sized piezoelectric vibrator with few spurious modes.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記Ｓ
ＡＷ共振器においては振動周波数に大きな温度依存性が
あり、振動周波数は温度に対して上に凸の２次曲線で示
される。この場合の２次曲線は−０．０３ｐｐｍ／℃2
（室温２５℃における発振周波数を基準とする。）程度
の２次係数をもつ。このような温度特性は振動周波数の
精度を無効にするため、適切な温度制御を行う必要があ
る。しかし、ＳＡＷ共振器の動作は水晶基板の表面近傍
の状態に大きく影響されるため、水晶基板の表面に温度
調節のための異物を接触させることができず、水晶基板
に効率的な温度調節を行うことが困難である。However, the above S
In the AW resonator, the vibration frequency has a large temperature dependence, and the vibration frequency is represented by a quadratic curve that is convex with respect to temperature. The quadratic curve in this case is -0.03 ppm / ° C 2
It has a quadratic coefficient of about (based on the oscillation frequency at room temperature of 25 ° C.). Since such temperature characteristics invalidate the accuracy of the vibration frequency, it is necessary to perform appropriate temperature control. However, since the operation of the SAW resonator is greatly affected by the state near the surface of the crystal substrate, it is not possible to bring a foreign substance for temperature control into contact with the surface of the crystal substrate, and the temperature control of the crystal substrate is efficiently performed. Difficult to do.
【０００５】そこで本発明は上記問題点を解決するもの
であり、その課題は、ＳＡＷ共振器等のＳＡＷ装置の温
度調節を適切に行うことのできる新規の装置構成を実現
することにある。Therefore, the present invention solves the above-mentioned problems, and an object thereof is to realize a new device configuration capable of appropriately adjusting the temperature of a SAW device such as a SAW resonator.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に本発明が講じた手段は、圧電基板の表面上に形成され
所定の周期構造を備えた信号電極を有する弾性表面波装
置において、前記圧電基板の表面温度を測定する温度測
定手段と、前記圧電基板の裏面に一方の温度領域が熱的
に接合するように配置された熱電素子と、前記温度測定
手段の測定温度に応じて前記熱電素子を駆動し、前記表
面温度を制御する温度制御手段とを設けるものである。Means for Solving the Problems The means taken by the present invention to solve the above-mentioned problems are provided in a surface acoustic wave device having a signal electrode formed on the surface of a piezoelectric substrate and having a predetermined periodic structure, Temperature measuring means for measuring the surface temperature of the piezoelectric substrate, a thermoelectric element arranged so that one temperature region is thermally joined to the back surface of the piezoelectric substrate, and the thermoelectric element according to the temperature measured by the temperature measuring means. Temperature control means for driving the element and controlling the surface temperature is provided.
【０００７】この場合において、前記圧電基板、前記温
度測定手段、前記熱電素子及び前記温度制御手段を単一
のケーシング内に収容することが好ましい。In this case, it is preferable that the piezoelectric substrate, the temperature measuring means, the thermoelectric element and the temperature control means are housed in a single casing.
【０００８】また、前記圧電基板を、前記熱電素子を介
して支持部材に支持させることが望ましい。Further, it is desirable that the piezoelectric substrate is supported by a supporting member via the thermoelectric element.
【０００９】また、前記圧電基板を、その裏面の一部の
みを接触面として支持部材に支持させることが望まし
い。Further, it is desirable that the piezoelectric substrate is supported by a supporting member with only a part of the back surface thereof serving as a contact surface.
【００１０】そして、前記熱電素子を、前記圧電基板の
裏面上に複数分散配置することが好ましい。It is preferable that a plurality of the thermoelectric elements are dispersedly arranged on the back surface of the piezoelectric substrate.
【００１１】[0011]
【作用】請求項１によれば、水晶基板の裏面にペルチェ
素子の一方の温度領域が熱的に接合されていることによ
り、水晶基板の表面側の構造に妨げられることなく、し
かも表面上の弾性表面波に影響を与えることなく大きな
接触面を介して冷却若しくは加熱を行うことができるの
で、効率的かつ安定した温度制御を行うことができ、安
定したＳＡＷ装置の動作を実現できる。According to the present invention, since one temperature region of the Peltier device is thermally bonded to the back surface of the crystal substrate, the structure on the front surface side of the crystal substrate is not hindered, and moreover, it is on the surface. Since cooling or heating can be performed via the large contact surface without affecting the surface acoustic waves, efficient and stable temperature control can be performed, and stable operation of the SAW device can be realized.
【００１２】請求項２によれば、単一のケーシング内に
各構成要素を全て収容することにより、高性能のＳＡＷ
デバイスを構成できる。According to the second aspect of the present invention, by accommodating all the constituent elements in a single casing, a high performance SAW is achieved.
You can configure the device.
【００１３】請求項３によれば、圧電基板を熱電素子を
介して支持部材に支持させることにより、圧電基板の支
持部を温度制御部として兼ねることができるので構造が
簡素化されるとともに効率的な冷却若しくは加熱ができ
る。According to the third aspect, by supporting the piezoelectric substrate on the supporting member via the thermoelectric element, the supporting portion of the piezoelectric substrate can also serve as the temperature control unit, so that the structure is simplified and efficient. It can be cooled or heated.
【００１４】請求項４によれば、圧電基板をその裏面の
一部のみを介して支持することにより、圧電基板の周囲
から受ける応力を低減させることができ、安定した動作
を期すことができる。According to the fourth aspect, by supporting the piezoelectric substrate only through a part of the back surface thereof, the stress received from the periphery of the piezoelectric substrate can be reduced, and stable operation can be expected.
【００１５】請求項５によれば、圧電基板の裏面上に複
数の熱電素子を分散配置することにより、熱電素子間の
応力伝達が分断されるので、圧電基板に与える応力をさ
らに低減することができる。According to the fifth aspect, since the stress transmission between the thermoelectric elements is divided by disposing the plurality of thermoelectric elements on the back surface of the piezoelectric substrate in a distributed manner, the stress applied to the piezoelectric substrate can be further reduced. it can.
【００１６】[0016]
【実施例】次に図面を参照して本発明に係るＳＡＷ装置
の実施例を説明する。以下に説明するＳＡＷ装置は水晶
基板を使用したＳＡＷ共振器である。しかし、本発明は
ＳＡＷ共振器に限らずＳＡＷフィルター等の各種ＳＡＷ
装置に適用できるものである。また、圧電基板について
も、水晶以外に、ＳＡＷ装置の構成や用途に応じてＬｉ
ＮｂＯ3 、ＬｉＴａＯ3 等の種々の材質が採用される。Embodiments of the SAW device according to the present invention will now be described with reference to the drawings. The SAW device described below is a SAW resonator using a crystal substrate. However, the present invention is not limited to SAW resonators and various SAW filters such as SAW filters.
It is applicable to the device. Also, regarding the piezoelectric substrate, other than quartz, depending on the configuration and application of the SAW device, Li
Various materials such as NbO 3 and LiTaO 3 are used.
【００１７】〔第１実施例〕この実施例では、図１に示
すように、縦３ｍｍ、横６ｍｍ、厚さ４００μｍ程度の
ＳＴカットの水晶基板１の表面にＩＤ変換器２、ＧＴ反
射器３，４、及び感温体５を形成し、水晶基板１の裏面
ほぼ全体にペルチェ素子６を貼着している。ペルチェ素
子６の中央部は支持台７の支持部７ａに固着されてい
る。[First Embodiment] In this embodiment, as shown in FIG. 1, an ID converter 2 and a GT reflector 3 are provided on the surface of an ST-cut quartz substrate 1 having a length of 3 mm, a width of 6 mm, and a thickness of 400 μm. , 4, and the temperature sensitive body 5 are formed, and the Peltier device 6 is attached to almost the entire back surface of the crystal substrate 1. The central portion of the Peltier element 6 is fixed to the support portion 7a of the support base 7.
【００１８】支持部７ａは水晶基板１及びペルチェ素子
６を支持台７に対して所定の間隔で離反させ、水晶基板
１に支持台７から応力伝達のないように構成されてお
り、水晶基板１に応力に起因する歪みが発生しないよう
にしている。The supporting portion 7a is configured so that the crystal substrate 1 and the Peltier element 6 are separated from the support base 7 at a predetermined interval so that stress is not transmitted to the crystal base 1 from the support base 7. The strain caused by stress is prevented from occurring.
【００１９】〔第２実施例〕図２には、上記実施例とは
異なる実施例の構造を示す。この実施例は上記第１実施
例と同様の水晶基板１、ＩＤ変換器２、ＧＴ反射器３，
４、感温体５及び支持台７を備えており、その説明は省
略する。本実施例では水晶基板１の裏面の中央部にペル
チェ素子６Ａ、左右にペルチェ素子６Ｂ，６Ｃがそれぞ
れ貼着され、中央のペルチェ素子６Ａは支持台７の支持
部７ａに固着されている。[Second Embodiment] FIG. 2 shows the structure of an embodiment different from the above embodiment. This embodiment has the same crystal substrate 1, ID converter 2, GT reflector 3, as in the first embodiment.
4, the temperature sensitive body 5 and the support base 7 are provided, and the description thereof will be omitted. In this embodiment, a Peltier element 6A is attached to the central portion of the back surface of the quartz substrate 1, and Peltier elements 6B and 6C are attached to the left and right sides, respectively, and the central Peltier element 6A is fixed to the support portion 7a of the support base 7.
【００２０】図３（ａ）は上記第１実施例及び第２実施
例の全体構成を示す。上記図１及び図２に示されている
支持台７はベース８に固着されており、このベース上に
はＩＣチップ９が実装されている。ベース８にはカバー
１０が取付けられ、密封されるようになっている。な
お、ベース８及びカバー１０で形成される内部空間には
窒素やアルゴン等の不活性ガスが充填される。ベース８
の下面からは内部回路に導電接続された複数の外部接続
端子１１が突出形成されている。FIG. 3A shows the overall construction of the first and second embodiments. The support base 7 shown in FIGS. 1 and 2 is fixed to a base 8, and an IC chip 9 is mounted on this base. A cover 10 is attached to the base 8 so as to be hermetically sealed. The internal space formed by the base 8 and the cover 10 is filled with an inert gas such as nitrogen or argon. Base 8
A plurality of external connection terminals 11 conductively connected to the internal circuit are formed to project from the lower surface of the.
【００２１】水晶基板１上のＩＤ変換器２には、図３
（ｂ）に示すようにそれぞれ櫛歯状に形成された対向電
極２ａ，２ｂが形成され、この対向電極２ａ，２ｂのそ
れぞれに信号線２１，２２がボンディングされている。
また、感温体５の両端にも検出線５１，５２が接続され
ている。これらの信号線２１，２２及び検出線５１，５
２の他端は支持台７に形成された配線パターンを介して
ベース８上の配線パターンに接続され、ＩＣチップ９内
に引き込まれている。The ID converter 2 on the crystal substrate 1 has a structure shown in FIG.
As shown in (b), counter electrodes 2a and 2b each having a comb shape are formed, and signal lines 21 and 22 are bonded to the counter electrodes 2a and 2b, respectively.
Further, the detection lines 51 and 52 are also connected to both ends of the temperature sensitive body 5. These signal lines 21 and 22 and detection lines 51 and 5
The other end of 2 is connected to a wiring pattern on the base 8 through a wiring pattern formed on the support base 7 and is drawn into the IC chip 9.
【００２２】ＩＤ変換器２の対向電極２ａ，２ｂ及びＧ
Ｔ反射器３，４の格子電極はアルミニウム等その他の合
金を蒸着、スパッタリング等により被着することによっ
て形成されている。ＩＤ変換機２の対向電極２ａ，２ｂ
及びＧＴ反射器３，４の格子電極の形成周期は水晶基板
１の表面に立つ弾性表面波の波長λの半分に設定されて
いる。また、感温体５は蒸着により形成された白金など
の薄膜であり、温度により変化する薄膜の抵抗値から水
晶基板１の表面温度が検出されるようになっている。Opposing electrodes 2a, 2b and G of the ID converter 2
The lattice electrodes of the T reflectors 3 and 4 are formed by depositing other alloy such as aluminum by vapor deposition, sputtering or the like. Opposing electrodes 2a, 2b of the ID converter 2
The period of forming the grating electrodes of the GT reflectors 3 and 4 is set to half the wavelength λ of the surface acoustic wave standing on the surface of the quartz substrate 1. The temperature sensitive body 5 is a thin film of platinum or the like formed by vapor deposition, and the surface temperature of the crystal substrate 1 is detected from the resistance value of the thin film which changes with temperature.
【００２３】図４には上記各実施例の回路構成を示す。
水晶基板１に形成されたＩＤ変換器２と感温体５はＩＣ
チップ９に接続されている。ＩＤ変換器２の信号線２
１，２２からは所定周波数の振動波形が取り出される。
また、感温体５の検出線５１，５２を介して得られた感
温体の抵抗値に応じて水晶基板１の表面温度が検出され
る。ＩＣチップ９は水晶基板１の表面温度と予め設定さ
れた基準温度との差を算出し、この温度差に応じてペル
チェ素子６の駆動電圧を出力する。FIG. 4 shows the circuit configuration of each of the above embodiments.
The ID converter 2 and the temperature sensitive body 5 formed on the crystal substrate 1 are ICs.
It is connected to the chip 9. Signal line 2 of ID converter 2
A vibration waveform having a predetermined frequency is extracted from the reference numerals 1 and 22.
Further, the surface temperature of the crystal substrate 1 is detected according to the resistance value of the temperature sensing body obtained through the detection lines 51, 52 of the temperature sensing body 5. The IC chip 9 calculates the difference between the surface temperature of the crystal substrate 1 and a preset reference temperature, and outputs the drive voltage of the Peltier element 6 according to this temperature difference.
【００２４】図５はペルチェ素子６の断面構造を示すも
のである。ペルチェ素子６は、アルミナ等で形成された
セラミック基板６１及び６２の間に、電極６３，６４と
Ｂｉ−Ｔｅ系等のｎ型半導体６５及びｐ型半導体６６を
電気的には直列に、熱的には並列に接続したπ型構造を
複数配列させたものである。セラミック基板６１は接着
剤６７により水晶基板１に接着され、セラミック基板６
２は接着剤６８により支持台７に接着されている。FIG. 5 shows a sectional structure of the Peltier device 6. In the Peltier element 6, the electrodes 63, 64 and the n-type semiconductor 65 and p-type semiconductor 66 such as Bi-Te system are electrically connected in series between the ceramic substrates 61 and 62 made of alumina or the like, and are thermally connected. Is an array of multiple π-type structures connected in parallel. The ceramic substrate 61 is adhered to the crystal substrate 1 with an adhesive 67,
2 is adhered to the support base 7 with an adhesive 68.
【００２５】上記第１実施例によれば、水晶基板１の裏
面上にペルチェ素子６を配置することにより、弾性表面
波に影響を与えることなく、しかも裏面上のいずれにも
ペルチェ素子を接触させることができるので、水晶基板
１全体の温度調節を行うことができる。この場合、水晶
基板１の支持は支持台７の支持部７ａによりペルチェ素
子６を介してのみ行われているため周囲に他の接触部が
存在せず、構造が簡素化されるとともに効率的な冷却若
しくは加熱を行うことができる。ペルチェ素子６のセラ
ミック基板６１は、上記駆動電圧の極性に応じて水晶基
板１の冷却と加熱を選択的に行い、上記駆動電圧の絶対
値に応じて冷却量若しくは加熱量が調整される。According to the first embodiment, by arranging the Peltier element 6 on the back surface of the quartz substrate 1, the Peltier element is brought into contact with any surface on the back surface without affecting surface acoustic waves. Therefore, the temperature of the entire crystal substrate 1 can be adjusted. In this case, since the crystal substrate 1 is supported only by the support portion 7a of the support base 7 through the Peltier element 6, there is no other contact portion around the support portion 7 and the structure is simplified and efficient. Cooling or heating can be performed. The ceramic substrate 61 of the Peltier element 6 selectively cools and heats the crystal substrate 1 according to the polarity of the driving voltage, and the cooling amount or the heating amount is adjusted according to the absolute value of the driving voltage.
【００２６】水晶基板１は、支持台７の支持部７ａだけ
でペルチェ素子６を介して支持されているため、その表
面に支持台７若しくは他の部材からの応力を受けること
がないので、安定した特性を得ることができる。Since the crystal substrate 1 is supported only by the support portion 7a of the support base 7 via the Peltier element 6, no stress is applied to the surface of the crystal base 1 from the support base 7 or other members, so that the crystal substrate 1 is stable. It is possible to obtain the desired characteristics.
【００２７】第２実施例によれば、水晶基板１の裏面に
貼着されたペルチェ素子６Ａ，６Ｂ，６Ｃが分割された
状態で形成されているため、第１実施例のように水晶基
板１と支持部７ａに挟持されたペルチェ素子６を介して
水晶基板が応力を受ける恐れもなく、より安定した動作
を期待できる。According to the second embodiment, since the Peltier elements 6A, 6B and 6C attached to the back surface of the crystal substrate 1 are formed in a divided state, the crystal substrate 1 as in the first embodiment. Further, stable operation can be expected without the crystal substrate being stressed through the Peltier element 6 sandwiched between the support portions 7a.
【００２８】上記各実施例では、ペルチェ素子を水晶基
板の裏面に貼着したことにより、極めてコンパクトに温
度制御構造を構成でき、温度制御による装置全体の容積
の増大を抑制することができる。また、各実施例では温
度制御手段により温度の調節を行うことにより振動周波
数を変化させることも可能である。In each of the above embodiments, the Peltier element is attached to the back surface of the quartz substrate, so that the temperature control structure can be constructed extremely compactly and the increase in the volume of the entire device due to the temperature control can be suppressed. Further, in each embodiment, it is possible to change the vibration frequency by adjusting the temperature by the temperature control means.
【００２９】なお、上記支持部７ａによる支持位置は水
晶基板１の裏面中央である必要はなく、中央から外れた
位置に形成されていてもよい。また、第２実施例のよう
に複数のペルチェ素子を設ける際のペルチェ素子の個数
や配置は任意である。感温体は上記実施例に示したもの
に限定されることなく、公知の種々の温度センサを温度
計測に適した場所であれば任意の場所に設置することが
できる。また温度制御はＩＣチップ９の内部回路により
通常のＰＩＤ制御方式等で行うことができ、或いは必要
に応じて他の方式を採用してもよい。さらに、ペルチェ
素子６の冷却若しくは加熱効果を高めるために、支持台
の周囲に若しくはペルチェ素子６Ｂ，６Ｃにおけるセラ
ミック基板６２の下面上に放熱フィン等の補助部材を適
宜取付けてもよい。また、上記構造のペルチェ素子に限
らず公知の種々の熱電素子を使用できることは言うまで
もない。The supporting position by the supporting portion 7a does not have to be the center of the back surface of the quartz substrate 1, but may be formed at a position deviated from the center. Further, when a plurality of Peltier elements are provided as in the second embodiment, the number and arrangement of Peltier elements are arbitrary. The temperature sensitive body is not limited to the one shown in the above embodiment, and various known temperature sensors can be installed at any place suitable for temperature measurement. Further, the temperature control can be performed by a normal PID control method or the like by the internal circuit of the IC chip 9, or another method may be adopted as necessary. Further, in order to enhance the cooling or heating effect of the Peltier element 6, an auxiliary member such as a heat radiation fin may be appropriately attached around the support base or on the lower surface of the ceramic substrate 62 in the Peltier elements 6B and 6C. Needless to say, various known thermoelectric elements can be used as well as the Peltier element having the above structure.
【００３０】[0030]
【発明の効果】以上説明したように本発明によれば以下
の効果を奏する。As described above, the present invention has the following effects.
【００３１】請求項１によれば、水晶基板の裏面にペル
チェ素子の一方の温度領域が熱的に接合されていること
により、水晶基板の表面側の構造に妨げられることな
く、しかも表面上の弾性表面波に影響を与えることなく
大きな接触面を介して冷却若しくは加熱を行うことがで
きるので、効率的かつ安定した温度制御を行うことがで
き、安定したＳＡＷ装置の動作を実現できる。According to the first aspect, one temperature region of the Peltier element is thermally bonded to the back surface of the crystal substrate, so that the structure on the front surface side of the crystal substrate is not hindered and the temperature on the front surface of the crystal substrate is maintained. Since cooling or heating can be performed via the large contact surface without affecting the surface acoustic waves, efficient and stable temperature control can be performed, and stable operation of the SAW device can be realized.
【００３２】請求項２によれば、単一のケーシング内に
各構成要素を全て収容することにより、高性能のＳＡＷ
デバイスを構成できる。According to the second aspect of the present invention, the high performance SAW is achieved by accommodating all the components in a single casing.
You can configure the device.
【００３３】請求項３によれば、圧電基板を熱電素子を
介して支持部材に支持させることにより、圧電基板の支
持部を温度制御部として兼ねることができるので構造が
簡素化されるとともに効率的な冷却若しくは加熱ができ
る。According to the third aspect, by supporting the piezoelectric substrate on the supporting member via the thermoelectric element, the supporting part of the piezoelectric substrate can also serve as the temperature control part, so that the structure is simplified and efficient. It can be cooled or heated.
【００３４】請求項４によれば、圧電基板をその裏面の
一部のみを介して支持することにより、圧電基板の周囲
から受ける応力を低減させることができ、安定した動作
を期すことができる。According to the fourth aspect, by supporting the piezoelectric substrate only through a part of the back surface thereof, the stress received from the periphery of the piezoelectric substrate can be reduced, and stable operation can be expected.
【００３５】請求項５によれば、圧電基板の裏面上に複
数の熱電素子を分散配置することにより、熱電素子間の
応力伝達が分断されるので、圧電基板に与える応力をさ
らに低減することができる。According to the fifth aspect, by disposing a plurality of thermoelectric elements on the back surface of the piezoelectric substrate in a distributed manner, the stress transmission between the thermoelectric elements is divided, so that the stress applied to the piezoelectric substrate can be further reduced. it can.
【図１】本発明に係る第１実施例におけるＳＡＷ装置の
主要部分の構造を示す縦断面図である。FIG. 1 is a vertical sectional view showing a structure of a main part of a SAW device in a first embodiment according to the present invention.
【図２】本発明に係る第２実施例におけるＳＡＷ装置の
主要部分の構造を示す縦断面図である。FIG. 2 is a vertical sectional view showing a structure of a main part of a SAW device according to a second embodiment of the present invention.
【図３】上記各実施例の全体構成を示す斜視図（ａ）及
びカバーを取り去った状態の平面図（ｂ）である。FIG. 3 is a perspective view (a) showing an overall configuration of each of the above-described embodiments and a plan view (b) with a cover removed.
【図４】上記各実施例の回路構成を示すブロック図であ
る。FIG. 4 is a block diagram showing a circuit configuration of each of the embodiments.
【図５】上記各実施例に取付けるペルチェ素子の構造を
示す拡大断面図である。FIG. 5 is an enlarged cross-sectional view showing the structure of a Peltier device attached to each of the above embodiments.
１ 水晶基板 ２ ＩＤ変換器 ３，４ ＧＴ反射器 ５ 感温体 ６，６Ａ，６Ｂ，６Ｃ ペルチェ素子 ７ 支持台 ７ａ 支持部 ８ ベース ９ ＩＣチップ １０ カバー 1 Crystal Substrate 2 ID Converter 3,4 GT Reflector 5 Temperature Sensitive Body 6,6A, 6B, 6C Peltier Element 7 Support 7a Support 8 Base 9 IC Chip 10 Cover
Claims (5)
構造を備えた信号電極を有する弾性表面波装置におい
て、前記圧電基板の表面温度を測定する温度測定手段
と、前記圧電基板の裏面に一方の温度領域が熱的に接合
するように配置された熱電素子と、前記温度測定手段の
測定温度に応じて前記熱電素子を駆動し、前記表面温度
を制御する温度制御手段とを設けたことを特徴とする弾
性表面波装置。1. A surface acoustic wave device having a signal electrode formed on the surface of a piezoelectric substrate and having a predetermined periodic structure, comprising: a temperature measuring means for measuring a surface temperature of the piezoelectric substrate; and a back surface of the piezoelectric substrate. A thermoelectric element arranged so that one temperature region is thermally joined, and a temperature control means for driving the thermoelectric element according to the temperature measured by the temperature measuring means and controlling the surface temperature are provided. A surface acoustic wave device.
温度測定手段、前記熱電素子及び前記温度制御手段は単
一のケーシング内に収容されていることを特徴とする弾
性表面波装置。2. The surface acoustic wave device according to claim 1, wherein the piezoelectric substrate, the temperature measuring means, the thermoelectric element, and the temperature control means are housed in a single casing.
記熱電素子を介して支持部材に支持されていることを特
徴とする弾性表面波装置。3. The surface acoustic wave device according to claim 1, wherein the piezoelectric substrate is supported by a supporting member via the thermoelectric element.
の裏面の一部のみを接触面として支持部材に支持されて
いることを特徴とする弾性表面波装置。4. The surface acoustic wave device according to claim 1, wherein the piezoelectric substrate is supported by a support member with only a part of the back surface of the piezoelectric substrate as a contact surface.
記圧電基板の裏面上に複数分散配置されていることを特
徴とする弾性表面波装置。5. The surface acoustic wave device according to claim 4, wherein a plurality of the thermoelectric elements are dispersedly arranged on the back surface of the piezoelectric substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21145194A JP3365070B2 (en) | 1994-09-05 | 1994-09-05 | Surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21145194A JP3365070B2 (en) | 1994-09-05 | 1994-09-05 | Surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0879002A true JPH0879002A (en) | 1996-03-22 |
| JP3365070B2 JP3365070B2 (en) | 2003-01-08 |
Family
ID=16606170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21145194A Expired - Fee Related JP3365070B2 (en) | 1994-09-05 | 1994-09-05 | Surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3365070B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7145283B2 (en) | 2002-10-29 | 2006-12-05 | Seiko Epson Corporation | Piezoelectric device and method for manufacturing the same |
| DE102007029393A1 (en) * | 2007-06-26 | 2009-01-22 | Epcos Ag | Transformer arrangement has piezoelectric transformer and thermoelectric components coupled in transformer, and thermoelectric components are electrically controlled |
| US7674038B2 (en) * | 2000-12-29 | 2010-03-09 | Tesat-Spacecom Gmbh & Co. Kg | Arrangement for temperature monitoring and regulation |
| JP2014112084A (en) * | 2012-10-31 | 2014-06-19 | Kyocera Corp | Specimen liquid sensor unit, leader for specimen liquid sensor, and specimen liquid sensor |
| US20180226950A1 (en) * | 2016-12-21 | 2018-08-09 | Skyworks Solutions, Inc. | Surface acoustic wave filter with temperature sensor |
-
1994
- 1994-09-05 JP JP21145194A patent/JP3365070B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7674038B2 (en) * | 2000-12-29 | 2010-03-09 | Tesat-Spacecom Gmbh & Co. Kg | Arrangement for temperature monitoring and regulation |
| US7145283B2 (en) | 2002-10-29 | 2006-12-05 | Seiko Epson Corporation | Piezoelectric device and method for manufacturing the same |
| DE102007029393A1 (en) * | 2007-06-26 | 2009-01-22 | Epcos Ag | Transformer arrangement has piezoelectric transformer and thermoelectric components coupled in transformer, and thermoelectric components are electrically controlled |
| JP2014112084A (en) * | 2012-10-31 | 2014-06-19 | Kyocera Corp | Specimen liquid sensor unit, leader for specimen liquid sensor, and specimen liquid sensor |
| JP2018063269A (en) * | 2012-10-31 | 2018-04-19 | 京セラ株式会社 | Specimen liquid sensor unit, reader for specimen liquid sensor, and specimen liquid sensor |
| US20180226950A1 (en) * | 2016-12-21 | 2018-08-09 | Skyworks Solutions, Inc. | Surface acoustic wave filter with temperature sensor |
| US10263602B2 (en) * | 2016-12-21 | 2019-04-16 | Skyworks Solutions, Inc. | Surface acoustic wave filter with temperature sensor |
| US10284177B2 (en) | 2016-12-21 | 2019-05-07 | Skyworks Solutions, Inc. | Filter with over temperature protection |
| US11088675B2 (en) | 2016-12-21 | 2021-08-10 | Skyworks Solutions, Inc. | Acoustic wave filter with temperature sensor |
| US11973491B2 (en) | 2016-12-21 | 2024-04-30 | Skyworks Solutions, Inc. | Over temperature protection for acoustic wave filter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3365070B2 (en) | 2003-01-08 |
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