JPH0878457A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE: To enable improving connection strength of wire bonding. CONSTITUTION: In an optical coupler 35, when plating is performed on a substrate 36, a solder resist film is formed before the uppermost plating later is formed, and a surface solid plating wiring is formed on a region which is previously decided. Thereby the surface of the uppermost plating layer is not contaminated by gas generated when the solder resist film is cured, and strength is improved when a light emitting element 42 and a light receiving element 43 which are arranged in the recessed parts 38, 39 of the substrate 36 are wire bonded with the plating layer by using lead wires.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device such as an optical semiconductor device.

[0002]

2. Description of the Related Art FIG. 28 is a diagram showing a sequence of steps for manufacturing an optical coupling device 21 based on a conventional technique. Optical coupling device 2
Reference numeral 1 denotes a MID (Molded Interconnection Device), which is formed by plating a base body 1 formed of a thermoplastic material or the like, and is used in conventional electronic components such as lead frames and terminals such as terminals. By omitting parts, the degree of freedom in part design is greatly improved, and the reliability of parts is improved.

In the step shown in FIG. 28 (1), the base body 1 which is a molded body is molded. The base 1 is formed of a highly heat-resistant synthetic resin or the like, for example, a liquid crystal polymer so that a pair of recesses 3 are formed in the direction perpendicular to the paper surface of FIG. The optical coupling device 21 includes a light emitting element 11 (see FIG. 28 (8) described later) in one recess 3 that separates the partition wall 2.
(Refer to FIG. 3), and the light receiving element is arranged in the other recess not shown in the same manner as the light emitting element 11. Although the following description will be given only for the light emitting element 11, the same steps are performed for the light receiving element. Next, in the step shown in FIG. 28 (2),
A circuit forming resist 4a such as a photoresist is formed on the substrate 1.
The areas where wiring is not performed are masked by 4b and 4c.

In the next step of FIG. 28 (3), a plating layer is formed of copper, nickel or the like on the area of the substrate 1 which is not masked by the circuit forming resists 4a, 4b and 4c, and the three-dimensional base plating wiring 5 is formed. , 6. When the formation of the underlying solid plating layer is completed, the circuit forming resists 4a, 4b, 4c are peeled and removed in the step shown in FIG. 28 (4).

In the step shown in FIG. 28 (5), surface three-dimensional plating is performed using gold, silver or the like to form a plated layer of gold or silver on the surfaces of the underlying three-dimensional plated wirings 5 and 6. The plated wirings 7 and 8 are formed. In the step shown in FIG. 28 (6), the protective translucent synthetic resin, which will be described later, used for preventing light leakage is prevented from flowing out from the substrate 1 on which the surface three-dimensional plating has been performed, and the optical coupling device is used. Solder resist films 9 and 10 are applied to prevent the plating area portions 7a and 8a serving as electrodes from being short-circuited by the solder when the wiring board is mounted on the wiring board using solder.

The solder resist films 9 and 10 are formed by silk-screen printing a synthetic resin such as an epoxy resin or a phenol resin, and the synthetic resin generates a gas when it is cured.

The gas generated when the solder resist films 9 and 10 are cured will be described. Solder resist film 9,1
When 0 is composed of a phenolic synthetic resin, the curing reaction of phenol is a dehydration condensation reaction, so that water volatilizes during the reaction. In addition, there is volatilization of low molecular weight phenol components and residual formalin components. Further, since an organic solvent whose solvent component is, for example, butyl carbitol is used to adjust the viscosity of the synthetic resin, the organic solvent component is volatilized during curing. Solder resist film 9, 10
When is composed of an epoxy-based synthetic resin, when adjusting the viscosity of the synthetic resin, there are a synthetic resin using an organic solvent and a synthetic resin using a reactive monomer. When the synthetic resin whose viscosity is adjusted by using the organic solvent is cured, the components of the organic solvent are volatilized as in the case of using the phenolic synthetic resin described above. When the synthetic resin whose viscosity is adjusted by using the reactive monomer is cured, the reactive monomer has a structure similar to that of the epoxy resin and a small molecular weight, so that the reactive monomer is slightly volatilized by applying heat.

If the gas generated as described above adheres to the plating surface, the plating surface is contaminated and the connection strength of wire bonding described later is adversely affected. In order to solve this problem, in order to remove stains on the plated surface and stabilize the quality of the optical coupling device, sulfuric acid or the like is used on the surface of the surface three-dimensional plated wirings 7 and 8 in the step shown in FIG. 28 (7). Are washing.

In the step shown in FIG. 28 (8), the partition wall 2 is
The light emitting element 11 is arranged at a predetermined position in one of the recesses 3 separated by using a conductive adhesive. Light emitting element 1
Since 1 and the light receiving element are arranged in the recess of the base body 1 with the partition wall therebetween, it is possible to prevent malfunction of the light receiving element caused by light leakage. In addition, since the recesses are provided, each element is less likely to receive an external force directly. In the step shown in FIG. 28 (9), one recess 3 of the base 1
The light emitting element 11 arranged in the above and the surface plated wiring 8 are connected by the conductive wire 12. A conductive wire such as gold is used for the conductive wire 12.

After the wire bonding is completed, as shown in FIG.
In the step shown in 0), the recess of the base 1 is the light emitting element 11
It is sealed by a sealing material 13 made of a translucent synthetic resin for protecting.

[0011]

In the method of manufacturing the optical coupling device 21 as described above, after the surface three-dimensional plated wirings 7 and 8 are formed using gold, silver or the like, the sealing material 13 is prevented from flowing out, and When the optical coupling device 21 is mounted on the substrate using solder, the solder resist films 9 and 10 are provided on the side surface of the base 1 for the purpose of preventing the plating region portions 7a and 8a from being short-circuited by the solder. Since it is formed on the surface of the substrate 1 other than the electrodes for the electrodes, dirt is attached to the surface of the plating by the gas generated when the resin is cured, and the conductor 12
There is a possibility that connection failure may occur at the connection part on the plating surface. Optical coupling device 21 to remove stains on the plating surface
Although the cleaning is performed in the manufacturing process of the above, there is a problem that the cleaning agent itself is contaminated by cleaning a large number of devices and the contamination is not completely removed due to variations in cleaning property, and the wire bonding strength is reduced. is there.

An object of the present invention is to provide a method of manufacturing a semiconductor device, which is capable of improving wire bonding strength and quality, and eliminating the step of cleaning the surface of a three-dimensional plated wiring. .

[0013]

According to the present invention, a conductor consisting of a plurality of layers is formed on a synthetic resin substrate by plating, and a solder resist film is formed on a predetermined region of the substrate or the conductor to form a semiconductor element and the conductor. In a method for manufacturing a semiconductor device in which wire bonding is performed with a conductive wire, a solder resist film is formed before forming at least the uppermost layer of the plurality of layers by plating. is there. Further, the present invention forms a synthetic resin base having a pair of recesses adjacent to each other with a partition wall therebetween, and plating a plurality of layers of conductors on the inner peripheral surface of each recess of the base and the outer peripheral surface of the base. Before forming at least the uppermost layer of the plurality of layers by plating, a solder resist film is formed on a predetermined region of the base or conductor including the end face of the partition wall, and the uppermost layer of the conductor is formed. After forming, the semiconductor element for emitting light and the conductor are wire-bonded with a conductor in one recess, and the semiconductor element for receiving light and the conductor are wire-bonded with a conductor in the other recess, and each recess is formed. A method for manufacturing an optical semiconductor device is characterized in that a transparent synthetic resin is filled in the place.

[0014]

According to the present invention, in the semiconductor device, when the conductor made of a plurality of layers is formed on the synthetic resin substrate by plating, at least the uppermost layer of the plurality of layers is formed by the plating. A solder resist film is formed on a predetermined area of the base or conductor, and the semiconductor element and the conductor are wire-bonded by a conductive wire. Therefore, since at least the uppermost plating layer is formed after forming the solder resist film that causes gas to be generated during curing and stains the plating surface, dirt adheres to the surface of the uppermost plating layer. Never. Further, since the surface of the uppermost plating layer is not contaminated, it is not necessary to provide a cleaning step.

Further, according to the present invention, the synthetic resin substrate of the optical semiconductor device is molded so that the pair of recesses are adjacent to each other with the partition wall interposed therebetween, and the inner peripheral surface of each recess of the substrate and the base A plurality of layers of conductors are formed over the outer peripheral surface by plating, and before forming at least the uppermost layer of the plurality of layers forming the conductors by plating, in a predetermined area of the base or conductor including the end surface of the partition wall. After forming the solder resist film and forming the uppermost layer, each semiconductor element for receiving and emitting light and each conductor are wire-bonded in the respective recesses of the substrate with conductive wires, and the transparent composite is formed in each recess. It is manufactured by filling with resin.

Therefore, after forming a solder resist film, which causes gas during curing to stain the surface of the uppermost plating layer, in a predetermined region of the substrate or conductor including the end face of the partition wall, Plating is performed to form the uppermost plating layer, and thereafter, in each recess of the substrate, each semiconductor element for receiving light and emitting light and each conductor are wire-bonded by a conductor wire, so the uppermost plating layer The surface of is clean and the wire bonding strength is improved. Further, since the surface of the uppermost plating layer is not contaminated, it is not necessary to provide a cleaning step.

[0017]

1 is a perspective view of an optical coupling device 35 according to a first embodiment of the present invention viewed from one side, and FIG. 2 is a perspective view of the optical coupling device 35 viewed from the other side. Optical coupling device 3
5 is the above-mentioned MID. The optical coupling device 35 has a base 36 made of, for example, a liquid crystal polymer such as a light-shielding synthetic resin material, and a pair of recesses 38 and 39 are formed adjacent to the base 36 with a partition wall 37 therebetween. . The base 36 is manufactured by injection molding. Each recess 38,3
The bottoms 40 and 41 of the light emitting element 42 are semiconductor elements.
And the light receiving element 43 are arranged. The light from the light emitting element 42 is applied to the object to be detected, and the reflected light thereof is received by the light receiving element 43.
The light is received and detected by. The base 36 has recesses 38, 39.
Has a pair of end walls 44 and 45 and a pair of side walls 46 and 47, and the partition wall 37 is provided at the central position in the longitudinal direction of the side walls 46 and 47. As shown by the dotted diagonal lines in FIG. 1, the recesses 38 and 39 are filled with a sealing material 79 made of a translucent synthetic resin, such as epoxy, to protect the semiconductor elements 42 and 43.

The base 36 has, for example, a length L1 = 4 mm,
The width L2 is 3 mm and the height H is 1 mm. The conductors 48, 49; 50, 51 electrically connected to the light emitting element 42 and the light receiving element 43 are the bottom surface 52 of the base 36.
12 of the drawings 53, 54;
To the conductors 58 and 59 of the wiring board 57 shown in FIG.
Soldered by 61.

The manufacturing process sequence of the optical coupling device 35 will be described with reference to the sectional views shown in FIGS.
The description of each of the following steps will be mainly given to the light emitting element 42.
However, the same steps are performed for the light receiving element 43 as well.

After the substrate 36 has been manufactured by injection molding, as shown in FIG. 3, in FIG. 4 the photoresist is silk screen printed to the bottom 40 of the recess 38,
On the end surface 58 of the partition wall 37 and the bottom 52, reference numerals 87,
Formed as shown at 88,89. Next, the electroless plating or electrolytic plating technique is used to form the base plating layers 71 and 72 made of a material such as copper or nickel which is relatively inexpensive and adheres to the base 36 with high adhesion strength.
The bottom 40 of the recess 38 and the side wall 4 as shown in FIG.
6, 47 inner side surfaces 62, 63, their side walls 46, 47 end surfaces 64, 65, and side wall 46, 47 outer side surfaces 66, 67.
And the bottom surface 52. Bottom 40 of recess 38
And the inner side surfaces 62 and 63 form the inner peripheral surface of the recess 38,
The outer side surfaces 66, 67 and the bottom surface 52 form the outer peripheral surface of the base body 36.

After the plating layer is formed, the photoresists 87, 88 and 89 are removed as shown in FIG. Next, as shown in FIG. 7, a solder resist film is formed on the region shown by solid line diagonal lines in FIG. 1 as indicated by reference numeral 69, and on the region shown by solid line diagonal lines in FIG. Is applied by printing by a technique such as silk screen printing, as indicated by reference numeral 70. This solder resist film 6
9 and 70 are made of, for example, an epoxy-based material, a phenol-based material, or the like. Therefore, the solder resist films 69, 70
Has a so-called repelling property without solder attached, and has a repelling property without the translucent synthetic resin material filling the recesses 38 and 39 attached.

Then, as shown in FIG. 8, the base plating layer 71,
The uppermost plating layers 73 and 74 are formed on 72, and the conductors 48 and 49 shown in FIG. 1 are formed. The uppermost plating layers 73, 74 are formed on the end faces 64, 65 of the side walls 46, 47.
It is not selectively formed on the upper base plating layers 71 and 72. Therefore, the shaded area shown by the solid line in FIG.
As described above, the solder resist film 69 remains.
The plating layers 73 and 74 are made of a material having good conductivity such as gold or silver, and have excellent corrosion resistance against the atmosphere,
Moreover, it is made of a material having a high adhesion strength for wire bonding. Thus, the solder resist films 69 and 70 are not attached to the uppermost plating layers 73 and 74, and the plating layers 73 and 74 are not contaminated due to the solder resist films 69 and 70. Furthermore, these plating layers 73, 7
No. 4 has a large adhesion strength with the base plating layers 71 and 72, and is in an electrically connected state.

Next, as shown in FIG. 9, the light emitting element 42 which is a semiconductor element is formed in the recess 3 by using a conductive adhesive 75.
It is electrically connected and fixed on the plating layer 73 formed on the bottom 40 of No. 8. After that, as shown in FIG. 10, one end 77 of the conductive wire 76 made of a material such as gold is attached to the light emitting element 4.
2 and wire the other end 78 to the other
The two plated layers 74 are wire-bonded and electrically connected.

After wire bonding, the recess 38 is formed.
As shown in FIG. 11, a sealing material 79 made of translucent synthetic resin is filled inside to protect the light emitting element 42 and the conductive wire 76. The encapsulant 79 is formed on the end surface of the base 36 shown by the dotted diagonal lines in FIG. 1, and since the encapsulant 79 is repelled by the solder resist film 69, so to speak, and is not attached, the partition wall 37 in FIG. The sealing material 79 does not exist on the upper end surface of the sheet. for that reason,
Light does not leak from the light emitting element 42 which is a semiconductor element to the light receiving element 43 which is a semiconductor element through the sealing material 79.
As a result, the light receiving element 43 does not cause erroneous detection.

FIG. 12 shows the optical coupling device 35 and the wiring board 57.
It is the figure which showed the mode that it was arrange | positioned above. The wiring board 57 is
Conductors 58 and 59 are provided as wiring on the electrically insulating substrate 22 in a predetermined pattern. Optical coupling device 3
The conductors 53 and 54 in 5 are the conductors 5 on the wiring board 57.
It is electrically connected to 8 and 59 by solders 60 and 61, respectively.

When soldering, the solder resist film 70 flows between the conductor 53 and the conductor 58 or between the conductor 54 and the conductor 59 while the solder 60 and 61 are being melted, so that the conductor 5
3, 58 and the conductors 54, 59 are prevented from being electrically connected.

FIG. 13 is a perspective view of a light receiving device 91 according to another embodiment of the present invention viewed from one side, and FIG. 14 is a perspective view of the light receiving device 91 viewed from the other side. In the light receiving device 91, the same components as those of the optical coupling device 35 of the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted. In the light receiving device 91, the base body 36 a is formed to have a single recess 39. The light receiving element 43 is mounted at a predetermined position of the conductor 50 formed in the recess 39 of the base body 36a,
The conductor 76 electrically connects with the conductor 51. When the wire bonding is completed, the recess 39 is sealed with a sealing material 79 made of a translucent synthetic resin similarly to the optical coupling device 35.

FIG. 15 is a perspective view of a light emitting device 93 of still another embodiment of the present invention viewed from one side, and FIG. 16 is a perspective view of the light emitting device 93 viewed from the other side. Light emitting device 93
In the above, the same components as those of the optical coupling device 35 of the above-described embodiment are designated by the same reference numerals and the description thereof will be omitted. In the light emitting device 93, the base 36a is formed to have a single recess 38. The light emitting element 42 is mounted at a predetermined position of the conductor 48 formed in the recess 38 of the base 36a, and is electrically connected to the conductor 49 by the conductor wire 76.
When the wire bonding is completed, the recess 38 is sealed with a sealing material 79 made of a translucent synthetic resin as in the optical coupling device 35.

FIG. 17 is a perspective view of a light receiving device 95 with a lens according to still another embodiment of the present invention viewed from one side, and FIG. 18 is a perspective view of the light receiving device 95 with a lens viewed from the other side. In the light receiving device with lens 95, the same components as those of the optical coupling device 35 of the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted. The characteristic of the light receiving device with lens 95 is that a substantially hemispherical lens 96 is provided for condensing light. The lens 96 is fixed on a mounting plate 94 made of a translucent synthetic resin and fixed to the upper end surface of the base body 36a shown in FIG.

FIG. 19 is a perspective view of a light emitting device with lens 97 which is still another embodiment of the present invention as seen from one side, and FIG. 20 is a perspective view of the light emitting device with lens 97 as seen from the other side. . In the light emitting device with lens 97, the same components as those of the optical coupling device 35 of the above-described embodiment are designated by the same reference numerals, and the description thereof will be omitted. The light emitting device with a lens 97 is characterized in that a substantially hemispherical lens 96 is provided to scatter light. Lens 96
Similar to the light receiving device with lens 97, the base 36 shown in FIG.
It is fixed on a mounting plate 94 made of a translucent synthetic resin, which is fixed to the upper end surface of a.

Other configurations and manufacturing steps of the respective embodiments of FIGS. 13 to 20 are the same as those of the first embodiment shown in FIGS. 1 to 11.

The experimental results of the present inventors will be shown. FIG. 21 shows
FIG. 6 is a perspective view showing a state in which one end 77 of a conducting wire 76 is wire-bonded to a semiconductor element 42 and the other end 78 is wire-bonded to a conductor 49 for electrical connection. According to the inventor of the present invention, the respective end portions 77, 78 of the lead wire 76 are
In order to measure the adhesive strength of the wire bonding of the above, a tensile force measuring means 80 called a tension gauge
The substantially J-shaped locking end 81 included in the above was locked to the conducting wire 76 and pulled, and the pulling force was measured.

In FIG. 22, the end portion 78 of the conductor wire 76 is
9 is a plan view magnified about 100 times showing a state in which the uppermost plating layer 74 of No. 9 is bonded by wire bonding. FIG. The outer diameter D1 of the conductor 76 in FIG. 22 is about 30 μm.
m.

FIG. 23 shows that in the prior art shown in FIG. 28, the end portion 98 of the lead wire 12 is replaced with the plated region portion 8a.
It is the top view which expanded the about 200 times which shows the state which wire-bonded to. In this prior art, FIG.
When the tensile force was measured by the method shown in FIG. 1, the end 98 of the conductive wire 12 was peeled off from the plated region portion 8a, and FIG.
As shown in FIG. 4, the surface of the plated region portion 8a after the peeling is indicated by reference numeral 99. From the state of this microscope observation, it can be seen that the area of adhesion between the end of the conductor and the conductor is not sufficiently adhered in a planar manner, and the solder resist has an adverse effect.

FIG. 25 shows the prior art shown in FIGS. 23 and 24, in which the inventor indicates the surface of the conductor with the tip of the tweezers on the conductor by reference numeral 82 before performing wire bonding. Scribing, and then wire-bonding the end of the conductor to the scribed conductor surface.
It is the figure which showed the result of having tested the tensile strength by the method shown in FIG. In FIG. 25, the conductive wire 12 is divided near the boundary with the end 98. As a result, it was confirmed that the adhesion strength between the end portion 98 of the conductive wire 12 and the plated area portion 8a was stronger than the strength of the conductive wire 12 and was sufficiently higher than the experimental result shown in FIG.

FIGS. 26 and 27 are graphs showing the experimental results of the present inventor related to FIGS. In the prior art of FIG. 28 described above, in the non-defective product indicated by reference numeral 83, the conductive wire 12 is divided by the tensile strength measuring means 80, and both ends are provided with the light emitting element 11 and the plated region portion 8a.
Remains attached to. Further, reference numeral 84 indicates that the conductive wire 12 is a plated region portion 8a in the defective product in the prior art.
It is the result of the experiment that peeled from the. It can be seen that the tensile strength at the time of peeling has large variations.

On the other hand, according to the present invention, as shown by reference numeral 85 in FIG.
Since the adhesion strength of 8 is sufficiently high, peeling does not occur and the conductor 7
6 was divided. Thus, it was confirmed that the adhesion strength of the conductor 76 to the uppermost plating layer 73 of the conductor 48 was sufficiently high.

The substrate 36 is not limited to a thermoplastic resin, and any material that can serve as a substrate, such as an epoxy resin containing glass fiber, can be applied.

The present invention can be widely applied not only to the light emitting element and the light receiving element, but also to various other semiconductor elements.

[0040]

As described above, according to the present invention, when a semiconductor device having a plurality of plating layers is formed, the uppermost plating layer is formed after the solder resist film is formed. The surface of the uppermost plating layer is not contaminated by gas generated when the solder resist film is cured. Therefore, when wire bonding the semiconductor element arranged in the semiconductor device and the conductor formed by the plating layer, the wire bonding strength is improved, and the quality of the semiconductor device can be improved. Moreover, since the surface of the uppermost plating layer is not contaminated, the step for cleaning is unnecessary, and the manufacturing cost of the semiconductor device can be suppressed.

Further, according to the present invention, when manufacturing an optical semiconductor device having a pair of recesses adjacent to each other with a partition wall interposed therebetween and a plurality of plating layers are formed, the solder resist film is used as an end surface of the partition wall. Since the uppermost plating layer is formed after it is formed on the predetermined area of the base or conductor containing the metal, the surface of the uppermost plating layer may be contaminated by the gas generated when the solder resist film is cured. Absent. Therefore, when wire bonding each semiconductor element for receiving and emitting light to the conductor in the recess of the optical semiconductor device, the wire bonding strength is improved and the quality of the optical semiconductor device can be improved. In addition, since the surface of the uppermost plating layer is not contaminated, the process for cleaning is unnecessary and the manufacturing cost of the optical semiconductor device can be suppressed.

[Brief description of drawings]

FIG. 1 is a perspective view of an optical coupling device 51 according to an embodiment of the present invention as viewed from one side.

FIG. 2 is a perspective view of an optical coupling device 51 according to an embodiment of the present invention viewed from the other side.

FIG. 3 is a cross-sectional view of a base body 1.

FIG. 4 is a cross-sectional view of the base body 1 on which photoresists 59, 60, 61 are formed.

FIG. 5 is a cross-sectional view of the base body 1 on which base plating layers 71 and 72 are formed.

FIG. 6 is a cross-sectional view of the base body 1 from which photoresists 87, 88 and 89 have been removed.

FIG. 7 is a cross-sectional view of the base body 1 on which solder resist films 69 and 70 are formed.

FIG. 8 is a cross-sectional view of the base body 1 on which the uppermost plating layers 73 and 74 are formed.

FIG. 9 is a cross-sectional view of the base body 1 on which the light emitting element 42 is arranged.

FIG. 10 is a cross-sectional view of the base 1 on which the light emitting element 42 and the plating layer 74 are wire bonded.

11 is a cross-sectional view of the base body 1 filled with a sealing material 79. FIG.

FIG. 12 is a cross-sectional view of an optical coupling device 35 and a substrate 57 that are electrically connected by solders 60 and 61.

FIG. 13 is a perspective view of a light receiving device 91 according to another embodiment of the present invention as seen from one side.

FIG. 14 is a perspective view of a light receiving device 91 according to another embodiment of the present invention as viewed from the other side.

FIG. 15 is a light emitting device 9 which is still another embodiment of the present invention.
It is the perspective view which looked at 3 from one side.

FIG. 16 is a light emitting device 9 according to still another embodiment of the present invention.
It is the perspective view which looked at 3 from the other side.

FIG. 17 is a perspective view of a light receiving device with a lens 95 which is still another embodiment of the present invention, as seen from one side.

FIG. 18 is a perspective view of a light receiving device with lens 95 which is still another embodiment of the present invention, as seen from the other side.

FIG. 19 is a perspective view of a light emitting device with lens 97 which is still another embodiment of the present invention, as seen from one side.

FIG. 20 is a perspective view of a light emitting device with lens 97 which is still another embodiment of the present invention, as seen from the other side.

FIG. 21 is a perspective view showing how the wire bonding strength is measured.

22 is a plan view showing a state in which the plating layer 74 and the conductive wire 76 are wire-bonded in the optical coupling device 35. FIG.

FIG. 23 is a plan view showing a state in which the plated area portion 8a and the conductive wire 12 are wire-bonded.

FIG. 24 is a plan view showing a state in which the conductor wire 12 is peeled from the plating region portion 8a.

FIG. 25 is a plan view showing a plating region portion 8a having a scratch and an end portion 98 of the conductive wire 12.

FIG. 26 is measurement data of wire bonding strength in a semiconductor device manufactured by a conventional technique.

FIG. 27 is measurement data of wire bonding strength in a semiconductor device manufactured according to the present invention.

FIG. 28 is a view showing the sequence of manufacturing steps for the optical coupling device 21 based on the conventional technique.

[Explanation of symbols]

 35 Optical Coupling Device 36 Base Body 37 Partition Wall 38, 39 Recess 42 Light-Emitting Element 43 Light-Receiving Element 57 Wiring Board 58, 59 Conductor 60, 61 Solder 69, 70 Solder Resist Film 71, 72 Undercoat Plating Layer 73, 74 Topmost Plating Layer 76 Conductor 79 Encapsulant 87, 88, 89 Photoresist

Claims (2)

[Claims] 1. A semiconductor in which a conductor composed of a plurality of layers is formed on a synthetic resin substrate by plating, a solder resist film is formed on a predetermined region of the substrate or the conductor, and a semiconductor element and the conductor are wire-bonded by a conductor wire. A method for manufacturing a semiconductor device, comprising forming a solder resist film before forming at least the uppermost layer of the plurality of layers by plating. 2. A synthetic resin substrate having a pair of recesses adjacent to each other with a partition wall therebetween is molded, and a plurality of conductor layers are plated on the inner peripheral surface of each recess of the base member and the outer peripheral surface of the base by plating. And forming a solder resist film on a predetermined area of the base or conductor including the end face of the partition wall before forming at least the uppermost layer of the plurality of layers by plating, and forming the uppermost layer of the conductor. After forming, the semiconductor element and the conductor for light emission are wire-bonded with a conductor in one recess, and the semiconductor element and the conductor for light reception are wire-bonded with a conductor in the other recess, and each recess is formed. A method for manufacturing an optical semiconductor device, characterized in that a transparent synthetic resin is filled in the place.