JPH0878371A - Cleaning cassette for semiconductor wafer - Google Patents

Cleaning cassette for semiconductor wafer

Info

Publication number
JPH0878371A
JPH0878371A JP23063494A JP23063494A JPH0878371A JP H0878371 A JPH0878371 A JP H0878371A JP 23063494 A JP23063494 A JP 23063494A JP 23063494 A JP23063494 A JP 23063494A JP H0878371 A JPH0878371 A JP H0878371A
Authority
JP
Japan
Prior art keywords
wafer
cassette
cleaning
support
cleaning cassette
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP23063494A
Other languages
Japanese (ja)
Inventor
Yasutsugu Soeda
康嗣 添田
Hideki Munakata
秀樹 宗像
Toshimasa Yamada
敏雅 山田
Yasuo Yabe
保夫 矢部
Makoto Ikeda
誠 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Valqua Industries Ltd
Shin Etsu Handotai Co Ltd
Nihon Valqua Kogyo KK
Dainichi Shoji KK
Original Assignee
Nippon Valqua Industries Ltd
Shin Etsu Handotai Co Ltd
Nihon Valqua Kogyo KK
Dainichi Shoji KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Valqua Industries Ltd, Shin Etsu Handotai Co Ltd, Nihon Valqua Kogyo KK, Dainichi Shoji KK filed Critical Nippon Valqua Industries Ltd
Priority to JP23063494A priority Critical patent/JPH0878371A/en
Publication of JPH0878371A publication Critical patent/JPH0878371A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: To tightly support wafers in a cleaning cassette with reduced contact area of support faces of the cassette with the wafers by forming rows of support pins protrudent from the inner walls of the cassette in the length direction of the cassette along the circumferences of the wafers and contacting the top ends of the pins with the faces of the wafers. CONSTITUTION: Support pins 23a-23b and guide members 24 are protrudent from the both inner side walls of a main body 21 to its center; each wafer is supported with two right and two left pins and one right and one left members. Rows of the support pins and guide members are arranged in the length direction of the main body, each row supporting one wafer. The guide members in one row have grooves 24a to loosely receive the ends of the wafer held between the interiors of pair of grooves 24b located at the right and left of the guides. The outer circumferential faces of thin top ends of the support pins in each row contact with faces 2a of the wafer.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、シリコンやIII−V族化
合物のような半導体ウェーハ(以下、ウェーハと略すこ
とがある)の洗浄工程に使用する洗浄カセットの構造に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a cleaning cassette used in a cleaning process of a semiconductor wafer (hereinafter sometimes abbreviated as a wafer) such as silicon or a III-V compound.

【0002】[0002]

【従来の技術】半導体ウェーハの製造工程において、各
工程の橋渡しをする必須な工程として洗浄工程がある。
このウェーハの洗浄工程においては、ウェーハを洗浄用
カセットに収納して洗浄槽内にて洗浄する手段が従来か
ら用いられている。
2. Description of the Related Art In a semiconductor wafer manufacturing process, a cleaning process is an essential process for bridging each process.
In the wafer cleaning step, a means for housing the wafer in a cleaning cassette and cleaning the wafer in a cleaning tank has been conventionally used.

【0003】図8及び図9に従来のウェーハの洗浄用カ
セットの1例を示す。同図において、10は洗浄カセッ
ト、2は洗浄対象物であるウェーハである。該洗浄カセ
ット10は上面及び下面が開放された箱状体に形成さ
れ、内壁面にウェーハ収納用の溝11が長手方向に等間
隔で多数配設されている。13は左右のカセット結合用
のリムである。
FIG. 8 and FIG. 9 show an example of a conventional wafer cleaning cassette. In the figure, 10 is a cleaning cassette, and 2 is a wafer which is an object to be cleaned. The cleaning cassette 10 is formed into a box-shaped body having an open upper surface and a lower surface, and a large number of wafer storage grooves 11 are arranged on the inner wall surface at equal intervals in the longitudinal direction. Reference numeral 13 is a rim for connecting the left and right cassettes.

【0004】そして、前記ウェーハ2の洗浄を行う際に
はカセット10の上面開口部12から各溝11内にウェ
ーハ2を嵌め込み、該カセットの上端フランジ14を洗
浄ロボット及びハンドル(図示せず)の支持具に懸吊し
て洗浄槽(図示せず)内の洗浄液内に浸漬し、ウェーハ
2の洗浄を行う。
When cleaning the wafer 2, the wafer 2 is fitted into each groove 11 through the upper opening 12 of the cassette 10 and the upper end flange 14 of the cassette is cleaned by a cleaning robot and a handle (not shown). The wafer 2 is washed by suspending it from the support and immersing it in a cleaning liquid in a cleaning tank (not shown).

【0005】この際において、ウェーハ2の端面は溝1
1内に形成された多数の支持面11aに当接され、支持
されている。
At this time, the end face of the wafer 2 is formed in the groove 1
It is abutted on and supported by a large number of support surfaces 11a formed in the inside 1.

【0006】[0006]

【発明が解決しようとする課題】所で、前記半導体ウェ
ーハ2は、通常、硬脆性の物質で表面が傷つき易い材料
である上に、高い加工精度を要するため、その端面は面
取りされ、更に必要に応じて鏡面に仕上げられている。
また、製品としての半導体ウェーハの一方の主面は鏡面
に仕上げられている。
However, since the semiconductor wafer 2 is usually a hard brittle substance and its surface is easily scratched, and a high processing precision is required, its end face is chamfered and further required. It is mirror-finished according to.
In addition, one main surface of a semiconductor wafer as a product is mirror-finished.

【0007】然るに、前記従来の洗浄用カセット10に
あっては、ウェーハ挿入用の溝11内において、ウェー
ハ2の端面は溝11内に形成された支持面11aに当接
された形で支持されており、ウェーハ2と洗浄カセット
の支持面11aとの接触面積が大きく、ウェーハ2の端
面を含む周辺部の鏡面が傷つき易く、更に汚れ易い条件
下にあった。
However, in the conventional cleaning cassette 10, the end face of the wafer 2 is supported in the groove 11 for inserting the wafer so as to be in contact with the supporting surface 11a formed in the groove 11. Therefore, the contact area between the wafer 2 and the supporting surface 11a of the cleaning cassette is large, and the mirror surface of the peripheral portion including the end surface of the wafer 2 is easily scratched and is more likely to be contaminated.

【0008】また、前記従来の洗浄カセット10はPF
A(Per Fluoro Alcoxy fluororesins) 樹脂材からな
っているが、このPFA樹脂材は熱変形温度が75℃
(ASTM D648/0.45MPa荷重時)と低
く、通常の洗浄ラインでは洗浄槽内温度が80℃に達す
ることがあるため、使用時間の経過とともに洗浄カセッ
ト10に変形を生じ、結果としてウェーハの支持面が正
常に作用しなくなる。
Further, the conventional cleaning cassette 10 is a PF
It is made of A (Per Fluoro Alcoxy fluororesins) resin material, but this PFA resin material has a heat distortion temperature of 75 ° C.
As low as (ASTM D648 / 0.45MPa load), the temperature in the cleaning tank may reach 80 ° C in a normal cleaning line, so that the cleaning cassette 10 is deformed with the lapse of use time, resulting in wafer support. The surface does not work properly.

【0009】さらに、PFA樹脂材は耐摩耗性に乏しく
ウェーハの出し入れを繰り返すと、その摩耗粉などのパ
ーティクルがウェーハ2の端面周辺部に附着する。
Further, the PFA resin material is poor in abrasion resistance, and when the wafer is repeatedly taken in and out, particles such as abrasion powder adhere to the peripheral portion of the end surface of the wafer 2.

【0010】即ち、従来の洗浄カセット10にあって
は、カセット10の支持面11aとウェーハ2との接触
面積が広いことから、ウェーハ2の端面周辺部に傷、汚
れが発生し易く、高品質のウェーハを安定して得難いと
いう問題があった。
That is, in the conventional cleaning cassette 10, since the contact surface between the supporting surface 11a of the cassette 10 and the wafer 2 is large, scratches and stains easily occur on the peripheral portion of the end surface of the wafer 2, which results in high quality. However, there is a problem that it is difficult to stably obtain the wafer.

【0011】従って、本発明の目的は、半導体ウェーハ
の洗浄工程で使用される洗浄カセットにおいて、カセッ
トの支持面とウェーハとの接触面積を減少しつつウェー
ハのカセット内での支持を堅固になし、ウェーハの表面
(特に鏡面)における傷や汚れの発生を阻止し得る洗浄
用カセットを供給することである。
Therefore, it is an object of the present invention to firmly support a wafer in a cassette in a cleaning cassette used in a semiconductor wafer cleaning process while reducing the contact area between the supporting surface of the cassette and the wafer. The purpose of the present invention is to provide a cleaning cassette capable of preventing the generation of scratches and dirt on the surface of a wafer (particularly a mirror surface).

【0012】[0012]

【課題を解決するための手段】本発明は前記課題を解決
するため、洗浄カセットのウェーハ支持部に改良を加え
たものである。
In order to solve the above-mentioned problems, the present invention is an improvement of the wafer supporting portion of the cleaning cassette.

【0013】即ち、本発明の第1の特徴は、前記洗浄カ
セットが、その内壁面から前記半導体ウェーハの周方面
に沿って複数本の支持ピンを、前記カセットの長手方向
に複数列突設し、該支持ピンの端部周面を前記ウェーハ
の板面に当接せしめて該ウェーハを支持するように構成
されてなることである。
That is, the first feature of the present invention is that the cleaning cassette has a plurality of support pins projecting from the inner wall surface along the circumferential surface of the semiconductor wafer in a plurality of rows in the longitudinal direction of the cassette. The support pin is configured so that the peripheral surface of the end portion of the support pin is brought into contact with the plate surface of the wafer to support the wafer.

【0014】また本発明の第2の特徴は、前記洗浄カセ
ットが、その内壁面から前記半導体ウェーハの周方面に
沿って複数本の支持ピンを、前記カセットの長手方向に
複数列突設し、該支持ピンの端部周面を前記ウェーハの
板面に当接せしめるとともに、前記支持ピンの間に設け
たガイド部材の溝内に前記ウェーハを遊嵌し、前記支持
ピン及び前記ガイド部材により前記ウェーハを支持する
ように構成されてなることにある。この場合、前記支持
ピンの間に溝部を有する一対のガイド部材を、前記カセ
ットの短手方向両側に配設し、該ガイド部材の溝部奥端
にウェーハの両端面が接触し、ウェーハの深さ方向に位
置規制された状態で支持可能に構成するのがよい。
A second feature of the present invention is that the cleaning cassette has a plurality of support pins projecting from the inner wall surface along the circumferential surface of the semiconductor wafer in a plurality of rows in the longitudinal direction of the cassette, While making the end peripheral surface of the support pin contact the plate surface of the wafer, the wafer is loosely fitted in the groove of the guide member provided between the support pins, and the support pin and the guide member are used to It is configured to support the wafer. In this case, a pair of guide members having a groove portion between the support pins are arranged on both sides in the lateral direction of the cassette, and both end surfaces of the wafer are in contact with the inner ends of the groove portions of the guide member, and the depth of the wafer is increased. It is preferable to be configured so as to be supported in a state where the position is regulated in the direction.

【0015】さらに本発明の第3の特徴は、少なくとも
前記ガイド部材及び支持ピンが、0.45MPaの荷重
における熱変形温度100℃以上の高分子材、例えばP
TFE(Poly Tetra Fluoro Ethylene)のようなフッ素
樹脂やPEEK(Poly EtherEther Ketone)樹脂材で構
成されることである。
A third feature of the present invention is that at least the guide member and the support pin have a thermal deformation temperature of 100 ° C. or higher under a load of 0.45 MPa, such as P.
It is composed of a fluororesin such as TFE (Poly Tetra Fluoro Ethylene) or a PEEK (Poly Ether Ether Ketone) resin material.

【0016】[0016]

【作用】本発明に係る半導体ウェーハの洗浄カセットは
前記のように構成されているので、ウェーハは洗浄カセ
ットの本体内において、各ウェーハ毎に、本体内壁面か
ら突設された複数本の支持ピンの端部周面と該ウェーハ
の板面とを当接せしめることにより各ウェーハは倒れを
起すことなく、堅固に支持される。
Since the semiconductor wafer cleaning cassette according to the present invention is constructed as described above, the wafer is provided with a plurality of support pins projecting from the inner wall surface of the main body of the cleaning cassette for each wafer. By bringing the peripheral surface of the end of the wafer into contact with the plate surface of the wafer, each wafer is firmly supported without inclining.

【0017】従って、ウェーハと支持ピンとの間はほぼ
点に近い線接触となり、両者の接触面積は従来の洗浄カ
セットに較べて大幅に減少し、ウェーハ板面の傷や汚れ
の発生が防止される。
Therefore, the line contact between the wafer and the support pin is almost close to a point, the contact area between the two is greatly reduced as compared with the conventional cleaning cassette, and the wafer plate surface is prevented from being scratched or soiled. .

【0018】また、前記支持ピンに加えて前記支持ピン
の間に設けたガイド部材の溝内に前記ウェーハを遊嵌
し、該ガイド部材の左右に位置する一対の溝間にウェー
ハが挟持されることにより、深さ方向(上下方向)の位
置規制がなされた状態で支持するようにしたので、洗浄
カセット内におけるウェーハの位置決めが確実にでき、
多数のウェーハを堅固に洗浄カセット内に並置して洗浄
作業を行うことができる。従ってガイド部材の左の溝と
右の溝間の間隔距離はウェーハ直径より少なくとも狭幅
に設定する必要がある。
In addition to the support pins, the wafer is loosely fitted in the grooves of the guide member provided between the support pins, and the wafer is sandwiched between a pair of grooves located on the left and right of the guide member. As a result, since the wafer is supported in a state where the position in the depth direction (vertical direction) is regulated, the wafer can be reliably positioned in the cleaning cassette.
A large number of wafers can be firmly placed side by side in the cleaning cassette to perform the cleaning operation. Therefore, the distance between the left groove and the right groove of the guide member must be set to be at least narrower than the wafer diameter.

【0019】尚、この場合ガイド部材は必要最小限の幅
でかつ溝の深さも位置決めできる程度の深さで充分であ
るので、ガイド部材の設置によるウェーハとの接触面積
の増加は極く微量である。
In this case, since the guide member has the minimum necessary width and the depth of the groove so that the groove can be positioned, the contact area with the wafer is hardly increased by installing the guide member. is there.

【0020】さらに、請求項4の発明のように、洗浄カ
セットの前記ガイド部材及び支持ピンが、0.45MP
aの荷重における熱変形温度100℃以上の高分子材、
例えばPTFEのようなフッ素樹脂やPEEK樹脂材で
構成することにより、通常の洗浄温度条件において、支
持ピン、ガイド部材、カセット本体を含む洗浄カセット
の熱変形は殆ど無く、ウェーハを常時均一な力で担持し
て洗浄作業を行うことができる。
Further, according to the invention of claim 4, the guide member and the support pin of the cleaning cassette are 0.45MP.
a polymer material having a heat distortion temperature of 100 ° C. or higher under the load of a,
For example, by using a fluororesin or PEEK resin material such as PTFE, under normal cleaning temperature conditions, there is almost no thermal deformation of the cleaning cassette including the support pins, the guide member, and the cassette body, and the wafer can be always treated with a uniform force. It is possible to carry and carry out a cleaning operation.

【0021】[0021]

【実施例】以下図1〜図7を参照して本発明の実施例に
つき詳細に説明する。但し、この実施例に記載されてい
る構成部品の寸法、材質、形状、その相対的配置等は特
に特定的な記載がないかぎりは、この発明の範囲をそれ
に限定する趣旨ではなく、単なる説明例にすぎない。
Embodiments of the present invention will be described in detail below with reference to FIGS. However, unless otherwise specified, the dimensions, materials, shapes, relative positions, etc. of the components described in this embodiment are not intended to limit the scope of the present invention thereto, but merely illustrative examples. Nothing more.

【0022】図1〜図4は本発明の第1実施例に係る半
導体ウェーハの洗浄工程で使用される洗浄カセットの構
造図であり、図1はその正面図、図2は図1のII−II線
拡大断面図、図3は図1のIII 矢視図、図4は図1のIV
−IV線拡大断面図である。
1 to 4 are structural views of a cleaning cassette used in a semiconductor wafer cleaning process according to the first embodiment of the present invention. FIG. 1 is a front view thereof, and FIG. 2 is a line II- of FIG. II line enlarged sectional view, FIG. 3 is a view taken in the direction of arrow III in FIG. 1, and FIG.
FIG. 4 is an enlarged sectional view taken along line IV.

【0023】図1〜図4において1は洗浄カセット、2
1は該洗浄カセットの本体、2は該本体21内に収納さ
れる被洗浄体であるウェーハである。前記洗浄カセット
の本体21は、上面にウェーハ2の挿入、抜出用の開口
部26を有する箱状体にて構成され、長手方向に洗浄用
のウェーハ2が並置(図3参照)されるようになってい
る。
1 to 4, 1 is a cleaning cassette, and 2 is a cleaning cassette.
Reference numeral 1 is a main body of the cleaning cassette, and 2 is a wafer to be cleaned, which is housed in the main body 21. The main body 21 of the cleaning cassette is composed of a box-shaped body having an opening 26 for inserting and removing the wafer 2 on the upper surface thereof, so that the cleaning wafers 2 are juxtaposed in the longitudinal direction (see FIG. 3). It has become.

【0024】23a,23bは、前記洗浄カセットの本
体21の両側壁内面に突設された支持ピン、24は該支
持ピン23a〜23bの間に突設されたガイド部材であ
る。
Reference numerals 23a and 23b are support pins projecting from the inner surfaces of both side walls of the main body 21 of the cleaning cassette, and 24 is a guide member projecting between the support pins 23a to 23b.

【0025】前記支持ピン23a〜23b及びガイド部
材24は、本体21の両側壁内面から中央に向けて突設
されており、この実施例においては、ウェーハ2の1枚
当り、支持ピンが左右各2個(23a,23b)、ガイ
ド部材24が左右各1個設けられている。そして、これ
らの支持ピン23a〜23bとガイド部材24とが図3
から明らかなように、本体21の長手方向に複数列設け
られ、各列毎に1枚のウェーハ2を支持可能となってい
る。
The support pins 23a-23b and the guide member 24 are provided so as to project from the inner surfaces of both side walls of the main body 21 toward the center. In this embodiment, one support pin is provided on each side of the wafer 2. Two (23a, 23b) and one guide member 24 are provided on each of the left and right sides. The support pins 23a-23b and the guide member 24 are shown in FIG.
As is clear from the above, a plurality of rows are provided in the longitudinal direction of the main body 21, and each row can support one wafer 2.

【0026】前記各列のガイド部材24の溝24a内に
はウェーハ2の端部が遊嵌されつつ、ガイド部材24の
左右に位置する一対の溝の奥部24b、24b間にウェ
ーハが挟持されることにより、深さ方向(上下方向)の
位置規制がなされる。従ってガイド部材の左右の溝奥部
24b、24b間の間隔距離Pはウェーハ直径より狭幅
に設定される。(図4参照)
The ends of the wafers 2 are loosely fitted in the grooves 24a of the guide members 24 in each row, and the wafers are sandwiched between the inner portions 24b, 24b of the pair of grooves located on the left and right of the guide member 24. By doing so, the position is regulated in the depth direction (vertical direction). Therefore, the distance P between the left and right groove portions 24b, 24b of the guide member is set to be narrower than the wafer diameter. (See Fig. 4)

【0027】又、前記各列の支持ピン23a〜23b
は、その細径先端部の外周面がウェーハ2の板面2aに
当接されている。この当接態様は、図2に示すように、
支持ピン23aとウェーハ2の1板面2aとが当接され
る一方、他の支持ピン23bはウェーハ2の反対側の板
面2a′に当接されるようにして、ウェーハ2の倒れを
防止している。
Further, the support pins 23a-23b of each row are
The outer peripheral surface of the small-diameter tip portion is in contact with the plate surface 2a of the wafer 2. This contact mode is, as shown in FIG.
The support pins 23a and one plate surface 2a of the wafer 2 are brought into contact with each other, while the other support pins 23b are brought into contact with the plate surface 2a 'on the opposite side of the wafer 2 to prevent the wafer 2 from collapsing. are doing.

【0028】前記ガイド部材24の溝24aは、ウェー
ハ2の位置決めに用いるものであるために、その幅b
(図2参照)を極力小さくするとともに、図4に示すよ
うに、ウェーハ2の鏡面仕上した板面2a側の溝面をこ
れの反対側よりもcだけ短かく形成して、ウェーハ2の
鏡面仕上側の板面2aとガイド部材24との接触面積を
小さくしている。
The groove 24a of the guide member 24 is used for positioning the wafer 2 and therefore has a width b.
(See FIG. 2) as much as possible, and as shown in FIG. 4, the mirror surface of the wafer 2 is formed by forming the groove surface on the mirror-finished plate surface 2a side by c shorter than the opposite side. The contact area between the plate surface 2a on the finishing side and the guide member 24 is reduced.

【0029】又、前記支持ピン23a〜23bとガイド
部材24の相対位置は、ウェーハ2のピッチの均一化及
びウェーハ2同士の平行保持、ウェーハが逆に倒れた時
の接触の回避、さらにはガイド部材24の溝24a内に
おけるウェーハ2の水切り効果を考慮して設定される。
Further, the relative positions of the support pins 23a-23b and the guide member 24 are set such that the pitch of the wafers 2 is made uniform, the wafers 2 are held parallel to each other, contact is avoided when the wafers are tilted in the opposite direction, and further the guides are provided. It is set in consideration of the draining effect of the wafer 2 in the groove 24a of the member 24.

【0030】即ち、この実施例においては、図3に示す
ようにウェーハ2が洗浄カセット1内に収納されたと
き、鉛直線に対しθ=3°程度傾斜するようにガイド部
材24の溝24aの向き及び支持ピン23a〜23bの
設置位置を定めて前記の要求に対応している。
That is, in this embodiment, as shown in FIG. 3, when the wafer 2 is stored in the cleaning cassette 1, the groove 24a of the guide member 24 is inclined so as to be inclined about θ = 3 ° with respect to the vertical line. The direction and the installation positions of the support pins 23a to 23b are determined to meet the above requirements.

【0031】更に、前記カセット本体21、支持ピン2
3a〜23b、ガイド部材24を含む洗浄カセットは、
少なくとも前記ガイド部材及び支持ピンが、0.45M
Paの荷重における熱変形温度100℃以上の高分子
材、例えばPTFEのようなフッ素樹脂やPEEK樹脂
材からなる。
Further, the cassette body 21 and the support pins 2
The cleaning cassette including 3a to 23b and the guide member 24 is
At least the guide member and the support pin are 0.45M
It is made of a polymer material having a heat distortion temperature of 100 ° C. or higher under a load of Pa, for example, a fluororesin such as PTFE or a PEEK resin material.

【0032】22は本体21の上部に形成された保持用
フランジであり、図1に示すように、該フランジ22が
洗浄用ロボットのアーム31に係合されて、該ロボット
により洗浄カセット1を洗浄槽(図示せず)内に浸漬あ
るいは取り出し可能としている。25は左右の本体側壁
間に架設された補強用のリムである。
Reference numeral 22 is a holding flange formed on the upper portion of the main body 21, and as shown in FIG. 1, the flange 22 is engaged with an arm 31 of a cleaning robot to clean the cleaning cassette 1 by the robot. It can be immersed in or taken out from a tank (not shown). Reference numeral 25 is a reinforcing rim provided between the left and right side walls of the main body.

【0033】前記のように構成された洗浄カセット1を
使用してウェーハの洗浄を行う際において、ウェーハ2
はその端縁2箇所にてガイド部材24の溝24a内に遊
嵌されながらガイド部材24の左右に位置する一対の溝
の奥部24b、24bにウェーハ端面が当接して、深さ
方向の位置規制がなされながら挟持されるとともに、板
面の一方2aを支持ピン23aの細径先端部の外周面に
当接され、板面の他方(反対側の面)2a′を支持ピン
23bの細径先端部外周に当接されることにより、両端
を支持されている。
When cleaning the wafer using the cleaning cassette 1 constructed as described above, the wafer 2
Is loosely fitted into the groove 24a of the guide member 24 at two end edges thereof, and the wafer end surface abuts on the inner portions 24b, 24b of the pair of grooves located on the left and right of the guide member 24, and the position in the depth direction. While being clamped while being regulated, one of the plate surfaces 2a is brought into contact with the outer peripheral surface of the small-diameter tip portion of the support pin 23a, and the other (opposite surface) 2a 'of the plate surface is formed with the small diameter of the support pin 23b. Both ends are supported by being brought into contact with the outer circumference of the tip portion.

【0034】このため、ウェーハ2と支持ピン23a〜
23bとの接触はほぼ点に近い線接触となり、またガイ
ド部材24の溝24aも単にウェーハ2の位置決めをす
るに足りる程度の幅及び深さであることから、ウェーハ
2と洗浄カセット1の支持面との接触面積は従来のもの
に較べて格段に小さくなる。これにより、ウェーハ2の
板面における傷や汚れの発生が防止される。
Therefore, the wafer 2 and the support pins 23a ...
23b is a line contact close to a point, and the groove 24a of the guide member 24 is wide and deep enough to simply position the wafer 2. Therefore, the supporting surface of the wafer 2 and the cleaning cassette 1 is supported. The contact area with is much smaller than the conventional one. This prevents the plate surface of the wafer 2 from being scratched or soiled.

【0035】またウェーハ2を、これの1枚当り複数個
の支持ピン23a〜23bとガイド部材24とを組合せ
て支持しているので、ウェーハ2は洗浄カセット1内に
おいて、倒れや支持部からの脱落等の不具合を生ずるこ
となく、堅固に担持される。
Further, since the wafer 2 is supported by combining a plurality of support pins 23a-23b and the guide member 24 per one of the wafers 2, the wafer 2 falls in the cleaning cassette 1 and is supported by the supporting portion. It is firmly supported without causing problems such as falling off.

【0036】さらに、前記のように洗浄カセット1はP
TFEのようなフッ素樹脂若しくはPEEK樹脂材にて
構成されている。尚、PTFE樹脂材、PEEK樹脂材
と従来の洗浄カセットに用いられていたPFA樹脂材と
の一般物性の比較を〔表1〕に示す。
Further, as described above, the cleaning cassette 1 has P
It is made of a fluororesin or PEEK resin material such as TFE. Table 1 shows a comparison of general physical properties between the PTFE resin material and the PEEK resin material and the PFA resin material used in the conventional cleaning cassette.

【0037】[0037]

【表1】 [Table 1]

【0038】〔表1〕から明らかなように例えばPEE
K樹脂材はPFA樹脂材に較べ格段に高い引張強度及び
曲げ弾性を有するが、殊に0.45MPaの荷重におけ
る熱変形温度がPTFEで128℃、PEEKで152
℃と、PFA(75℃)に較べて1.7〜2倍程度高
い。このため洗浄槽内使用温度(約80℃)においても
洗浄カセット1の熱変形は殆ど無く、各ウェーハ2は高
温時においても洗浄カセット1の支持ピン23a〜23
b及びガイド部材24に均一な力で確実に担持される。
As is clear from Table 1, for example, PEE
The K resin material has much higher tensile strength and flexural elasticity than the PFA resin material, but the heat deformation temperature under load of 0.45 MPa is 128 ° C for PTFE and 152 for PEEK.
C. and 1.7 to 2 times higher than PFA (75.degree. C.). Therefore, even if the cleaning cassette 1 is used at a temperature (about 80 ° C.), the cleaning cassette 1 is hardly deformed by heat, and each wafer 2 has the support pins 23a to 23 of the cleaning cassette 1 even at high temperatures.
b and the guide member 24 are reliably supported by a uniform force.

【0039】図5乃至図7は本発明の他の実施例で、こ
の実施例においては前記実施例と異なり、ウェーハ2の
1枚当り、支持ピンが左右各3個(23a,23b,2
3c)、ガイド部材24が左右各1個設けられている。
そして、これらの支持ピン23a〜23cとガイド部材
24とが図7に示すように、洗浄カセットの本体21の
長手方向に複数列設けられ、各列毎に1枚のウェーハ2
を支持可能となっている。
FIGS. 5 to 7 show another embodiment of the present invention. In this embodiment, unlike the above-described embodiment, each wafer 2 has three support pins (23a, 23b, 2) on the left and right sides.
3c), one left and right guide member 24 is provided.
As shown in FIG. 7, the support pins 23a to 23c and the guide member 24 are provided in a plurality of rows in the longitudinal direction of the main body 21 of the cleaning cassette, and one wafer 2 is provided in each row.
Can be supported.

【0040】前記各列のガイド部材24の溝24a及び
前記各列の支持ピン23aと23bは前記実施例と同様
に、図7に示すようにウェーハ2が、鉛直線に対しθ=
3°程度の傾斜角度で、洗浄カセット1内に収納された
際に、ウェーハ2のピッチの均一化及びウェーハ2同士
の平行保持を図るように設定されている。即ち、ガイド
部材24の左右に位置する一対の溝の奥部24b、24
b間にウェーハが挟持されることにより、深さ方向(上
下方向)の位置規制がなされ、又鏡面側に位置する下側
支持ピン23aと反鏡面側に位置する上側支持ピン23
bとにより、θ=3°の傾斜角度の角度規制が行われ、
この結果、溝24a内ではその端面のみが接触するのみ
で、正規傾斜位置ではその鏡面と反鏡面夫々に支持ピン
23aと支持ピン23bの周面が実質的に点接触、より
具体的にはほぼ点に近い線接触で接する事になる。
The groove 24a of the guide member 24 in each row and the support pins 23a and 23b in each row are the same as in the above embodiment, as shown in FIG.
It is set at an inclination angle of about 3 ° so as to make the pitch of the wafers 2 uniform and hold the wafers 2 in parallel when stored in the cleaning cassette 1. That is, the inner portions 24 b, 24 of the pair of grooves located on the left and right of the guide member 24.
By sandwiching the wafer between b, the position in the depth direction (vertical direction) is regulated, and the lower support pin 23a located on the mirror surface side and the upper support pin 23 located on the opposite mirror surface side.
With b, the angle regulation of the inclination angle of θ = 3 ° is performed,
As a result, only the end surface of the groove 24a is in contact with the groove 24a, and the peripheral surfaces of the support pin 23a and the support pin 23b are substantially in point contact with each other on the mirror surface and the anti-mirror surface at the normal tilt position, and more specifically, substantially. It will come into contact with a line contact near the point.

【0041】そして本実施例は特に前記第三の支持ピン
23cを設け、ウェーハが逆に倒れた時の隣接するウェ
ーハとの衝接の回避を図っている。即ち、上側支持ピン
23bの僅かに下方の鏡面側に第三の支持ピン23cを
配し、そして該支持ピン23cはウェーハが3°の傾斜
角度で正規位置に収納された場合には鏡面に接触せず、
僅かに離間した位置に突設させる。これにより第三の支
持ピン23cはウェーハ正規収納時の妨げになる事な
く、逆に倒れた時の隣接するウェーハとの衝接を回避す
ることが出来る。
In this embodiment, in particular, the third support pin 23c is provided so as to avoid the collision with the adjacent wafer when the wafer is tilted backward. That is, the third support pin 23c is disposed slightly below the upper support pin 23b on the mirror surface side, and the support pin 23c contacts the mirror surface when the wafer is housed in the regular position at an inclination angle of 3 °. Without
It is made to project at a slightly separated position. As a result, the third support pin 23c does not interfere with the normal storage of the wafer, and it is possible to avoid the collision with the adjacent wafer when the wafer is tilted.

【0042】[0042]

【発明の効果】本発明によれば、洗浄カセット内に収納
された半導体ウェーハを、該カセット本体の内壁面から
突設された複数本の支持ピンの端部周面に該ウェーハの
板面を当接せしめて支持するように構成したので、ウェ
ーハと洗浄カセット側の支持部材である支持ピンとの接
触面積が従来のものに較べて格段に小さくなり、これに
よりウェーハ板面の傷や汚れの発生が防止できる。
According to the present invention, a semiconductor wafer housed in a cleaning cassette is provided with a wafer surface on the peripheral surface of the end portions of a plurality of support pins protruding from the inner wall surface of the cassette body. The contact area between the wafer and the support pin, which is the support member on the cleaning cassette side, is significantly smaller than the conventional one because it is configured to abut and support the wafer cassette surface. Can be prevented.

【0043】また請求項2の発明によれば、前記支持ピ
ンに加えてガイド部材の溝内にウェーハを遊嵌して支持
するようにしたので、洗浄カセット内におけるウェーハ
の位置決めが確実にでき、多数のウェーハを堅固に洗浄
カセット内に並置して洗浄作業を行うことができる。
According to the second aspect of the invention, since the wafer is loosely fitted and supported in the groove of the guide member in addition to the support pin, the wafer can be reliably positioned in the cleaning cassette. A large number of wafers can be firmly placed side by side in the cleaning cassette to perform the cleaning operation.

【0044】尚、この場合、ガイド部材は必要最小限の
幅でかつ溝の深さも位置決めできる程度の深さで充分で
あるので、ガイド部材の設置によるウェーハとの接触面
積の増加は極く微量である。
In this case, since the guide member has the minimum necessary width and the depth of the groove is sufficient for positioning, the increase of the contact area with the wafer due to the installation of the guide member is extremely small. Is.

【0045】又、請求項3の発明によれば、深さ方向
(上下方向)の位置規制がなされた状態で支持するよう
にしたので、洗浄カセット内におけるウェーハの位置決
めが確実にでき、多数のウェーハを堅固に洗浄カセット
内に並置して洗浄作業を行うことができる。
Further, according to the invention of claim 3, since the wafer is supported in a state in which the position in the depth direction (vertical direction) is regulated, the wafer can be reliably positioned in the cleaning cassette, and a large number of wafers can be positioned. The cleaning operation can be performed by firmly arranging the wafers side by side in the cleaning cassette.

【0046】さらに、請求項4の発明によれば、従来の
PFA樹脂材に較べて熱変形温度が高い樹脂材を用いて
いるので、通常の洗浄温度条件において、支持ピン、ガ
イド部材、カセット本体を含む洗浄カセットの熱変形は
殆ど無く、ウェーハを常時均一な力で担持して洗浄作業
を行うことができる。
Further, according to the invention of claim 4, since a resin material having a higher heat deformation temperature than that of the conventional PFA resin material is used, the support pin, the guide member, and the cassette body can be used under normal washing temperature conditions. There is almost no thermal deformation of the cleaning cassette including the wafer, and the cleaning operation can be performed by always supporting the wafer with a uniform force.

【0047】この結果、半導体ウェーハを洗浄する際に
おける洗浄カセットの接触面積及び熱変形に起因するウ
ェーハの傷や汚れによる不良品の発生をほぼ完全に防止
でき、ウェーハの品質及び製品歩留りが向上する。
As a result, it is possible to almost completely prevent defective products due to scratches and stains on the wafer due to the contact area of the cleaning cassette and thermal deformation when cleaning the semiconductor wafer, and to improve the quality of the wafer and the product yield. .

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施例に係る半導体ウェーハの洗
浄工程で使用される洗浄カセットの正面図。
FIG. 1 is a front view of a cleaning cassette used in a semiconductor wafer cleaning process according to a first embodiment of the present invention.

【図2】図1のII−II線拡大断面図。2 is an enlarged sectional view taken along line II-II of FIG.

【図3】図1のIII 矢視図。FIG. 3 is a view on arrow III in FIG.

【図4】図1のIV−IV線拡大断面図。FIG. 4 is an enlarged sectional view taken along line IV-IV of FIG.

【図5】本発明の他の実施例に係る半導体ウェーハの洗
浄工程で使用される洗浄カセットの正面図。
FIG. 5 is a front view of a cleaning cassette used in a semiconductor wafer cleaning process according to another embodiment of the present invention.

【図6】図5のII−II線拡大断面図。6 is an enlarged sectional view taken along line II-II of FIG.

【図7】図5のIII 矢視図。FIG. 7 is a view on arrow III in FIG.

【図8】従来の半導体ウェーハ洗浄カセットの正面図。FIG. 8 is a front view of a conventional semiconductor wafer cleaning cassette.

【図9】図8のVI−VI線断面図。9 is a sectional view taken along line VI-VI of FIG.

【符号の説明】[Explanation of symbols]

1 洗浄カセット 2 半導体ウェーハ 21 洗浄カセットの本体 23a,23b,23c 支持ピン 24 ガイド部材 24a ガイド部材の溝 1 Cleaning Cassette 2 Semiconductor Wafer 21 Cleaning Cassette Body 23a, 23b, 23c Support Pin 24 Guide Member 24a Guide Member Groove

───────────────────────────────────────────────────── フロントページの続き (72)発明者 宗像 秀樹 福島県西白河郡西郷村大字小田倉字大平 150 信越半導体株式会社白河工場内 (72)発明者 山田 敏雅 大阪府西区江戸堀1−25−15 日本バルカ ー工業株式会社大阪支店内 (72)発明者 矢部 保夫 東京都中央区銀座6−13−3 日本バルカ ー工業株式会社東京支店内 (72)発明者 池田 誠 宮城県仙台市青葉区一番町1丁目12番16号 大日商事株式会社仙台出張所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hideki Munakata, Inventor Hideki Munakata Odaira, Odaira, Saigo-mura, Nishishirakawa-gun, Fukushima 150 Inside the Shirakawa Plant, Shin-Etsu Semiconductor Co., Ltd. (72) Tomasa Yamada 1-25-15 Edobori, Nishi-ku, Osaka Japan VALQUA INDUSTRY CO., LTD. Osaka Branch (72) Inventor Yasuo Yabe 6-13-3 Ginza, Chuo-ku, Tokyo Japan VALQUA INDUSTRY CO., LTD. Tokyo Branch (72) Inventor Makoto Ikeda Ichibancho, Aoba-ku, Sendai-shi, Miyagi 1-12-16 Dainichi Trading Co., Ltd. Sendai Branch Office

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウェーハの洗浄工程で使用される
洗浄カセットにおいて、 前記洗浄カセットの本体内壁面から前記半導体ウェーハ
の周方向に沿って複数本の支持ピンを、前記カセットの
長手方向に複数列突設し、該支持ピンの端部周面を前記
ウェーハの板面に当接せしめて該ウェーハを支持するよ
うに構成されてなることを特徴とする半導体ウェーハの
洗浄カセット。
1. A cleaning cassette used in a semiconductor wafer cleaning step, wherein a plurality of support pins are arranged in a plurality of rows in the longitudinal direction of the cassette from the inner wall surface of the main body of the cleaning cassette along the circumferential direction of the semiconductor wafer. A cleaning cassette for a semiconductor wafer, wherein the cleaning cassette for a semiconductor wafer is configured to project and to support an end peripheral surface of the support pin against the plate surface of the wafer to support the wafer.
【請求項2】 半導体ウェーハの洗浄工程で使用される
洗浄カセットにおいて、 前記洗浄カセットの本体内壁面から前記半導体ウェーハ
の周方向に沿って複数本の支持ピンを、前記カセットの
長手方向に複数列突設し、該支持ピンの端部周面を前記
ウェーハの板面に当接せしめるとともに、前記支持ピン
の間に設けたガイド部材の溝内に前記ウェーハを遊嵌
し、前記支持ピン及び前記ガイド部材により前記ウェー
ハを支持するように構成されてなることを特徴とする半
導体ウェーハの洗浄カセット。
2. A cleaning cassette used in the step of cleaning a semiconductor wafer, wherein a plurality of support pins are arranged in a plurality of rows in the longitudinal direction of the cassette from the inner wall surface of the main body of the cleaning cassette along the circumferential direction of the semiconductor wafer. The support pin is projected, and the peripheral surface of the end of the support pin is brought into contact with the plate surface of the wafer, and the wafer is loosely fitted in the groove of the guide member provided between the support pins. A cleaning cassette for a semiconductor wafer, which is configured to support the wafer by a guide member.
【請求項3】 前記支持ピンの間に溝部を有する一対の
ガイド部材を、前記カセットの短手方向両側に配設し、
該ガイド部材の溝部奥端にウェーハの両端面が接触し、
ウェーハの深さ方向に位置規制された状態で支持可能に
構成したことを特徴とする請求項2記載の洗浄カセッ
ト。
3. A pair of guide members having a groove portion between the support pins are arranged on both sides in the lateral direction of the cassette,
Both end surfaces of the wafer contact the inner end of the groove of the guide member,
The cleaning cassette according to claim 2, wherein the cleaning cassette is configured to be supported in a state in which the position of the wafer is regulated in the depth direction.
【請求項4】 少なくとも前記ガイド部材及び支持ピン
が、0.45MPaの荷重における熱変形温度100℃
以上の高分子材よりなる請求項1若しくは2記載の洗浄
カセット。
4. A heat distortion temperature of 100 ° C. under a load of 0.45 MPa at least in the guide member and the support pin.
The cleaning cassette according to claim 1, which is made of the above polymer material.
JP23063494A 1994-08-31 1994-08-31 Cleaning cassette for semiconductor wafer Withdrawn JPH0878371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23063494A JPH0878371A (en) 1994-08-31 1994-08-31 Cleaning cassette for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23063494A JPH0878371A (en) 1994-08-31 1994-08-31 Cleaning cassette for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH0878371A true JPH0878371A (en) 1996-03-22

Family

ID=16910869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23063494A Withdrawn JPH0878371A (en) 1994-08-31 1994-08-31 Cleaning cassette for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH0878371A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012178458A (en) * 2011-02-25 2012-09-13 Fujitsu Ltd Method of manufacturing semiconductor device and method of cleaning semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012178458A (en) * 2011-02-25 2012-09-13 Fujitsu Ltd Method of manufacturing semiconductor device and method of cleaning semiconductor substrate

Similar Documents

Publication Publication Date Title
US6845779B2 (en) Edge gripping device for handling a set of semiconductor wafers in an immersion processing system
JP2574608B2 (en) Wafer carrier
JP4227858B2 (en) Integrated circuit manufacturing apparatus and integrated circuit manufacturing method, and transfer robot used in this method
US6318389B1 (en) Apparatus for cleaning semiconductor wafers
KR100246593B1 (en) Semiconductor wafer carrier
WO1998008754A1 (en) Compliant process cassette
JP3291108B2 (en) Substrate processing method and apparatus
JP3623315B2 (en) Support jig for circular thin plate
JPH0878371A (en) Cleaning cassette for semiconductor wafer
JP4363114B2 (en) Plate processing rack
JP2513843B2 (en) Board holder
US6283355B1 (en) End effector for substrate handling
JPH06247483A (en) Substrate cassette
JPH10249613A (en) Holding chuck for rotating disc
JP7183997B2 (en) Glass substrate processing method
KR102503199B1 (en) Loading apparatus of batch type cleaning apparatus for substrate
JP3471068B2 (en) Plate support member and plate support holder using the same
JPH0513550A (en) Substrate transfer fork
US11698506B2 (en) Carrier mechanism for cleaning and handling
JP2008218757A (en) Plate-like body supporting member and holding body, and method for manufacturing plate-like body supporting member
JP2000124297A (en) Board holder
JP2526152B2 (en) Substrate cassette
JPH0917762A (en) Treatment apparatus
JP2533551Y2 (en) Semiconductor wafer holding jig
JPH06120319A (en) Semiconductor manufacture device

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20011106