JPH0867987A - Electroless plating method - Google Patents

Electroless plating method

Info

Publication number
JPH0867987A
JPH0867987A JP20330194A JP20330194A JPH0867987A JP H0867987 A JPH0867987 A JP H0867987A JP 20330194 A JP20330194 A JP 20330194A JP 20330194 A JP20330194 A JP 20330194A JP H0867987 A JPH0867987 A JP H0867987A
Authority
JP
Japan
Prior art keywords
plating
plating solution
electroless
tank
soln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP20330194A
Other languages
Japanese (ja)
Inventor
Yasushi Yoshii
靖 吉井
Noboru Yamaguchi
昇 山口
Masaya Koyama
雅也 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP20330194A priority Critical patent/JPH0867987A/en
Publication of JPH0867987A publication Critical patent/JPH0867987A/en
Withdrawn legal-status Critical Current

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Abstract

PURPOSE: To provide an electroless plating method by which the waste plating soln. is reduced and the plating soln. is continuously regnerated and used. CONSTITUTION: The surface of a material to be treated is electroless-plated while continuosuly regenerating the plating soln. in this method. Namely, the plating soln. is pumped out from a plating tank 1 and then sprayed into a low-temp. tank 5 to recrystallize a reaction product in the soln. The recrystallized material is separated from the soln. by filrration, and the plating soln. is returned to the tank 1. Consequently, a plating film stable over a long period of time is formed on the material.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、連続的にめっき液を再
生して使用する無電解めっき法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroless plating method in which a plating solution is continuously regenerated and used.

【0002】[0002]

【従来の技術】無電解めっきはいかなる形状や材質にも
均一に被膜の形成が可能であり、種々の機械的、電気的
特性を付与できる表面処理技術として利用されている。
しかし、無電解めっきは電気めっきに比べて反応生成物
が蓄積しやすく、その結果、均質な被膜を形成しにく
く、めっき廃液の量も多いという問題点がある。均質な
被膜を形成するために、めっき液を新浴に更新する方法
が取られているが、この方法は多量の廃液をもたらす問
題点がある。また、反応生成物が蓄積した廃液の発生量
の低減を狙い、反応生成物が蓄積しためっき液を電気透
析法を用いて再利用することが提案されているが、めっ
き原液を電気透析法でそのまま処理すると、めっき液が
濃縮されるために、装置の配管内やイオン交換膜に含有
成分が析出するという問題やめっき反応に必要なイオン
も反応生成物と同時に取り出されるという問題が生じて
いる。
2. Description of the Related Art Electroless plating is capable of forming a uniform film on any shape or material, and is used as a surface treatment technique capable of imparting various mechanical and electrical characteristics.
However, in electroless plating, reaction products are more likely to be accumulated than in electroplating, and as a result, it is difficult to form a uniform coating and the amount of plating waste liquid is large. In order to form a uniform coating, a method of replacing the plating solution with a new bath has been taken, but this method has a problem of producing a large amount of waste solution. In addition, it has been proposed to reuse the plating solution with accumulated reaction products by electrodialysis in order to reduce the amount of waste liquid with accumulated reaction products. If the treatment is carried out as it is, the plating solution is concentrated, so that there are problems that the contained components are precipitated in the piping of the apparatus and in the ion exchange membrane, and that ions necessary for the plating reaction are taken out at the same time as the reaction products. .

【0003】[0003]

【発明が解決しようとする課題】本発明が解決しようと
する課題は、めっき廃液の発生量が少なく、かつ、長期
間にわたって安定した品質のめっき被膜が得られる無電
解めっき法を見出すことである。すなわち、本発明の目
的はめっき廃液の発生量が少なく、かつ、連続的にめっ
き液を再生して使用することができる無電解めっき法を
提供することにある。
The problem to be solved by the present invention is to find an electroless plating method which produces a small amount of plating waste liquid and can obtain a plating film of stable quality for a long period of time. . That is, an object of the present invention is to provide an electroless plating method in which the amount of waste plating solution generated is small and the plating solution can be continuously regenerated and used.

【0004】[0004]

【課題を解決するための手段】本発明の無電解めっき法
は、めっき液を連続的に再生しながら、被処理物表面に
無電解めっきを施す無電解めっき法であって、めっき槽
からめっき液をくみ出し、次いでくみ出しためっき液を
霧状に低温槽内に吹きつけてめっき液中の反応生成物を
再結晶させ、次いで再結晶させたものを濾過によりめっ
き液と分離し、次いでめっき液を再びめっき槽に戻すこ
とを特徴としている。
The electroless plating method of the present invention is an electroless plating method in which electroless plating is performed on a surface of an object to be treated while continuously regenerating a plating solution. The solution is pumped out, the sprayed plating solution is sprayed into a low temperature tank in an atomized form to recrystallize the reaction product in the plating solution, and the recrystallized product is separated from the plating solution by filtration, and then the plating solution Is returned to the plating tank again.

【0005】また、請求項2の発明に係る無電解めっき
法は、めっき液が銅めっき液であることを特徴としてい
る。
Further, the electroless plating method according to the invention of claim 2 is characterized in that the plating solution is a copper plating solution.

【0006】以下、図面を参照しながら、本発明を説明
する。図1は本発明に係る無電解めっき法を示す概要図
である。
The present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing an electroless plating method according to the present invention.

【0007】めっき液槽1には、被処理物にめっきを施
すための無電解めっき液が満たされている。この無電解
めっき液には、金属イオン、金属イオンの錯体、還元
剤、pH調整剤、添加剤が含まれている。めっき反応で
消耗される金属イオン、金属イオンの錯体、還元剤、p
H調整剤、添加剤はコントローラ2で補給される。めっ
き液槽1からくみ出し用ポンプ3等の手段を用いてめっ
き液を連続的にくみ出し、吐出用ポンプ4等の手段を用
いてめっき液を霧状にして低温槽5内に吹きつけ、再結
晶した反応生成物を濾過塔6で濾過してめっき液と反応
生成物を分離して、得られためっき液をめっき液槽1に
戻す。この際、低温槽5の温度は0〜5℃の範囲内であ
ることが望ましい。この理由は、低温槽5の温度が0℃
未満であるとめっき液が凍結する可能性があり、5℃よ
り高いと反応生成物が再結晶しにくいためである。濾過
の方法については特に限定はなく、カートリッジフィル
ターや樹脂製のフィルター等を使用して行えばよい。
The plating solution tank 1 is filled with an electroless plating solution for plating an object to be treated. This electroless plating solution contains a metal ion, a metal ion complex, a reducing agent, a pH adjusting agent, and an additive. Metal ion, metal ion complex, reducing agent, p consumed in plating reaction
The H regulator and the additive are replenished by the controller 2. The plating solution is continuously pumped out of the plating solution tank 1 by using a pumping means 3 or the like, sprayed into a low temperature tank 5 by atomizing the plating solution by using a discharging pump 4 or the like, and recrystallized. The reaction product thus obtained is filtered by the filtration tower 6 to separate the plating solution and the reaction product, and the obtained plating solution is returned to the plating solution tank 1. At this time, the temperature of the low temperature tank 5 is preferably within the range of 0 to 5 ° C. The reason for this is that the temperature of the low temperature tank 5 is 0 ° C.
If it is less than 5, the plating solution may be frozen, and if it is higher than 5 ° C, the reaction product is difficult to recrystallize. The method of filtration is not particularly limited, and a cartridge filter, a resin filter, or the like may be used.

【0008】[0008]

【作用】本発明は反応生成物を再結晶させる方法に特徴
があり、霧状にしためっき液を冷却することによってス
ピーディーに反応生成物を再結晶させることができる。
この再結晶の方法を用いて、連続的にめっき液中の反応
生成物を除去することによって、反応生成物の蓄積が抑
えられ、被処理物に対し長期間に渡り安定した品質のめ
っき皮膜を形成できる。また、長期間に渡りめっきが可
能となることによって、めっき処理時間に対する廃液発
生量を抑えることができるようになる。
The present invention is characterized by the method of recrystallizing the reaction product, and the reaction product can be recrystallized speedily by cooling the atomized plating solution.
By using this recrystallization method to continuously remove the reaction products in the plating solution, the accumulation of reaction products is suppressed and a plating film of stable quality can be obtained for a long period of time on the object to be treated. Can be formed. Further, since the plating can be performed for a long period of time, the amount of waste liquid generated with respect to the plating processing time can be suppressed.

【0009】[0009]

【実施例】以下、本発明を実施例及び比較例に基づいて
説明する。
EXAMPLES The present invention will be described below based on Examples and Comparative Examples.

【0010】(実施例1)図1にその概要を示す、無電
解めっき法を適用し、かつ、下記のめっき液の条件で無
電解銅めっきを行った。
Example 1 An electroless plating method, the outline of which is shown in FIG. 1, was applied, and electroless copper plating was performed under the following plating solution conditions.

【0011】 〈無電解銅めっき液の組成及び条件〉 硫酸銅五水和物(金属イオン用) ・・・・10g/L エチレンジアミン四酢酸二ナトリウム(錯化剤) ・・・・30g/L 水酸化ナトリウム(pH調整剤) ・・・・pH12.0とする量 35%HCHO溶液(還元剤) ・・・・5mL/L シアン化ナトリウム(安定剤) ・・・・少量 ポリエチレングリコール(界面活性剤) ・・・・少量 浴温度条件 ・・・・60℃ めっき液槽1には上記の組成の無電解銅めっき液を入
れ、くみ出し用ポンプ3により20L/分の流量でめっ
き液をくみ出し、吐出用ポンプ4を用いてめっき液を霧
状にして低温槽5(槽温度3℃)内に吹きつけ反応生成
物を再結晶させた。次いで、低温槽5から出てきためっ
き液と再結晶物を濾過塔6に導き濾過し、濾過後の再結
晶物が分離されためっき液をめっき液槽1に戻した。ま
た、めっき反応で消耗する銅イオン、HCHO、水酸化
ナトリウムはコントローラ2を用いて補給した。そし
て、パラジウム系触媒の処理がされたアルミナ基板に対
し、上記の条件でめっき処理を施した。
<Composition and Conditions of Electroless Copper Plating Solution> Copper Sulfate Pentahydrate (for Metal Ions) ... 10 g / L Disodium Ethylenediaminetetraacetate (Complexing Agent) ... 30 g / L Water Sodium oxide (pH adjuster) ・ ・ ・ ・ Amount to adjust to pH 12.0 35% HCHO solution (reducing agent) ・ ・ ・ ・ 5mL / L Sodium cyanide (stabilizer) ・ ・ ・ ・ Small amount Polyethylene glycol (surfactant ) ... Small amount of bath temperature condition ... 60 ° C Put the electroless copper plating solution having the above composition into the plating solution tank 1, draw out the plating solution at a flow rate of 20 L / min by the drawing pump 3, and discharge it. The plating solution was atomized using the pump 4 for spraying into the low temperature tank 5 (tank temperature 3 ° C.) to recrystallize the reaction product. Next, the plating solution and the recrystallized product coming out of the low temperature tank 5 were introduced into a filtration tower 6 and filtered, and the plating solution in which the recrystallized product after filtration was separated was returned to the plating solution tank 1. Further, the controller 2 was used to replenish the copper ions, HCHO, and sodium hydroxide consumed in the plating reaction. Then, the alumina substrate treated with the palladium-based catalyst was plated under the above conditions.

【0012】(比較例1)実施例1における吐出用ポン
プ4を取り除き、めっき液を霧状にしないで、直接低温
槽5内に導いた他は実施例1と同様にめっき処理を行っ
た。なお、この場合反応生成物の再結晶は少量ではある
が発生した。
(Comparative Example 1) A plating process was performed in the same manner as in Example 1 except that the discharge pump 4 in Example 1 was removed and the plating solution was directly introduced into the low temperature tank 5 without being atomized. In this case, the recrystallization of the reaction product occurred although it was a small amount.

【0013】(比較例2)実施例1における吐出用ポン
プ4、低温槽5及び濾過塔6を取り除いて、めっき液を
くみ出し用ポンプ3により単に循環させた他は実施例1
と同様にめっき処理を行った。
(Comparative Example 2) Example 1 except that the discharge pump 4, the low temperature tank 5 and the filtration tower 6 in Example 1 were removed and the plating solution was simply circulated by the pump 3 for pumping out.
The plating process was performed in the same manner as in.

【0014】(実施例1、比較例1及び比較例2の結
果)比較例2の場合にはめっき開始の60時間後にめっ
き液が不安定になりはじめ、比較例1の場合には80時
間後にめっき液が不安定になりはじめたが、実施例1で
は120時間以上めっき処理を続けてもめっき液は安定
であった。なお、めっき液が不安定になったかどうか
は、被処理物であるアルミナ基板に形成されためっき皮
膜の外観を観察しザラツキが発生してきた場合にめっき
液が不安定になったと判定した。以上の結果から、実施
例1のめっき処理時間に対する廃液発生量は、比較例2
の場合の67%以下、比較例1の場合の50%以下とす
ることができたと言える。
(Results of Example 1, Comparative Example 1 and Comparative Example 2) In Comparative Example 2, the plating solution became unstable 60 hours after the start of plating, and in Comparative Example 1, after 80 hours. The plating solution began to become unstable, but in Example 1, the plating solution was stable even after the plating treatment was continued for 120 hours or more. Whether or not the plating solution became unstable was determined by observing the appearance of the plating film formed on the alumina substrate which was the object to be processed and when the roughness occurred, the plating solution became unstable. From the above results, the amount of waste liquid generated with respect to the plating treatment time in Example 1 was
It can be said that it could be 67% or less in the case of, and 50% or less in the case of Comparative Example 1.

【0015】[0015]

【発明の効果】本発明の無電解めっき法では、霧状にし
ためっき液を冷却することによってスピーディーに反応
生成物を再結晶させることができ、この操作を連続的に
行うことで、反応生成物の蓄積が抑えられるので、本発
明の無電解めっき法によれば、被処理物に対し長期間に
渡り安定した品質のめっき皮膜を形成でき、また、長期
間に渡りめっきが可能となることによって、めっき処理
時間に対する廃液発生量を抑えることができるようにな
る。
INDUSTRIAL APPLICABILITY According to the electroless plating method of the present invention, the reaction product can be recrystallized speedily by cooling the atomized plating solution. Since the accumulation of substances can be suppressed, the electroless plating method of the present invention can form a plating film of stable quality on an object to be treated for a long period of time, and also enables plating for a long period of time. As a result, the amount of waste liquid generated with respect to the plating processing time can be suppressed.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る無電解銅めっき法を示す概要図で
ある。
FIG. 1 is a schematic view showing an electroless copper plating method according to the present invention.

【符号の説明】[Explanation of symbols]

1 めっき液槽 2 コントローラ 3 くみ出し用ポンプ 4 吐出用ポンプ 5 低温槽 6 濾過塔 1 plating solution tank 2 controller 3 pump for pumping out 4 pump for discharge 5 low temperature tank 6 filtration tower

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 めっき液を連続的に再生しながら、被処
理物表面に無電解めっきを施す無電解めっき法であっ
て、めっき槽からめっき液をくみ出し、次いでくみ出し
ためっき液を霧状に低温槽内に吹きつけてめっき液中の
反応生成物を再結晶させ、次いで再結晶させたものを濾
過によりめっき液と分離し、次いでめっき液を再びめっ
き槽に戻すことを特徴とする無電解めっき法。
1. An electroless plating method in which electroless plating is performed on the surface of an object to be treated while continuously regenerating the plating solution, wherein the plating solution is drawn out from a plating tank, and then the drawn-out plating solution is atomized. Electroless characterized by spraying into a low temperature tank to recrystallize the reaction product in the plating solution, then separating the recrystallized product from the plating solution by filtration, and then returning the plating solution to the plating tank again Plating method.
【請求項2】 めっき液が銅めっき液であることを特徴
とする請求項1記載の無電解めっき法。
2. The electroless plating method according to claim 1, wherein the plating solution is a copper plating solution.
JP20330194A 1994-08-29 1994-08-29 Electroless plating method Withdrawn JPH0867987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20330194A JPH0867987A (en) 1994-08-29 1994-08-29 Electroless plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20330194A JPH0867987A (en) 1994-08-29 1994-08-29 Electroless plating method

Publications (1)

Publication Number Publication Date
JPH0867987A true JPH0867987A (en) 1996-03-12

Family

ID=16471771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20330194A Withdrawn JPH0867987A (en) 1994-08-29 1994-08-29 Electroless plating method

Country Status (1)

Country Link
JP (1) JPH0867987A (en)

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