JPH0864875A - Manufacture of thermoelectric converter - Google Patents

Abstract

PURPOSE: To largely simplify the assembling steps of a thermoelectric converter, and to prevent the damage on a semiconductor element when the elements are aligned. CONSTITUTION: As upper and lower electrodes for alternately electrically connecting in series a plurality of N-type and P-type semiconductor elements, a plurality of electrodes 12 having a solder resist layer and a positioning protrusion at the periphery, and a joint 13 having cutting grooves to couple between the adjacent electrodes 12 are provided. An integral electrode plate 11 which is common for all the semiconductor elements is used. After the two upper and lower integral electrode plates 11 are connected to semiconductor elements, the joint 13 is cut and separated individually to every side by a laser cutter. A semiconductor element in which an element shape is cut by a dicing saw from a semiconductor wafer adhered to an adhesive sheet is used.

Description

Detailed Description of the Invention

[0001]

INDUSTRIAL APPLICABILITY The present invention is applicable to a cooling device, a heating device or a temperature control device having both cooling and heating devices, a power generation device utilizing the temperature difference between cooling and overheating devices, and the like. The present invention relates to a method for manufacturing a thermoelectric conversion device, and particularly to a method for manufacturing a thermoelectric conversion device in which the efficiency of the assembly process is improved.

[0002]

2. Description of the Related Art First, the basic structure of a thermoelectric converter will be described with reference to FIG. FIG. 15 shows a main part of a device that performs cooling and the like using the thermoelectric conversion device. The device includes the thermoelectric conversion device 1, the cooling plate 2, the heat dissipation plate 3, and the DC power supply 4.
It consists of.

The thermoelectric conversion device 1 includes a plurality of N for thermoelectric conversion.
Type semiconductor elements 5a and P type semiconductor elements 5b are alternately arranged at regular intervals, while N type and P type semiconductor elements 5a,
5b is provided between the upper surfaces of the opposite polarity semiconductor elements 5b or 5a adjacent on one side and between the lower surfaces of the opposite polarity semiconductor elements 5b or 5a adjacent on the other side, and the upper and lower electrodes are provided. The plate 6 and each of the semiconductor elements 5a and 5b are connected by solder 7 or the like, and the N-type semiconductor element 5a and the P-type semiconductor element 5b are alternately electrically connected in series.
Further, the semiconductor element rows connected in this way are sandwiched and supported and fixed from above and below by the electrically insulating substrate 8 and the like.

When a voltage is applied from the DC power source 4 to both ends of the series connection in this way, that is, both ends of the lower electrode plate 6, the Peltier effect causes an endothermic action on the upper surface side of the thermoelectric conversion device 1 to generate heat. It is conveyed to the heat sink 3 side through the thermoelectric converter 1. The heat absorption and the amount of heat corresponding to the electric input are radiated on the lower surface side of the thermoelectric conversion device 1. Therefore, if the heat of the heat sink 3 is efficiently dissipated,
The heat is continuously transferred from the cooling plate 2 to the heat dissipation plate 3.

Therefore, both the cooling plate 2 and the heat radiating plate 3 need to suppress the thermal resistance, and for this reason, both 2 and 3 are in contact with the thermoelectric conversion device 1 via the heat conductive grease 9. . Further, as the material of the cooling plate 2 and the heat dissipation plate 3, a metal material such as a finned aluminum extruded material is mainly used.

Conventionally, as a method of manufacturing a thermoelectric conversion device having the above-mentioned structure, Japanese Patent Laid-Open No. 58-19957 has been proposed.
Those disclosed in Japanese Patent No. 8 and the like can be mentioned. 16 and 17 show examples of arrangement of conventional electrode plates typified by those described in the above publications. FIG. 16 shows an arrangement of upper electrode plates 6 and FIG. 17 shows an arrangement of lower electrode plates 6. Shows. In this conventional example, the upper and lower electrode plates 6 are each formed by cutting a copper plate by a press working method to form it, and then nickel plating the entire surface of each copper piece by a method such as barrel plating.

In a conventional thermoelectric conversion device assembling process using such a plurality of individually formed electrode plates 6, the electrode plates 6 are placed one by one in an electrode array jig (not shown) for positioning. As shown in FIG. 16 and FIG. 17, the sheets are vacuum-adsorbed one by one to be fixed in a matrix form, and the solder paste is printed on the surface of the electrode plate, and then the semiconductor elements 5a and 5b are placed thereon. I am trying to keep going.

Electrode plate 6 of these semiconductor elements 5a, 5b
In order to prevent the positional displacement between the N-type semiconductor element 5a and the P-type semiconductor element 5b, a semiconductor element arranging jig (not shown) for positioning is used for setting the semiconductor elements on the jig. Add one by one. In this way, the N-type semiconductor element 5a and the P-type semiconductor element are formed on the electrode plate 6 coated with the solder paste.
The mold semiconductor element 5b is placed, and reflow soldering is performed while applying pressure from above.

By the way, regarding the disconnection of the N-type semiconductor element 5a and the P-type semiconductor element 5b, JP-A-1-223781
Examples thereof include those disclosed in Japanese Patent Publication No. That is, as seen in this conventional example, the semiconductor elements 5a, 5
In b, the wafer material is bonded with an adhesive such as wax and then cut, and then the adhesive is melted with a solvent and degreased. In order to arrange the semiconductor elements 5a and 5b, it is necessary to align them with a parts feeder or the like. In the case of manual operation without using a parts feeder or the like, the orientation of each of the semiconductor elements 5a and 5b is adjusted using tweezers or the like, and the semiconductor elements 5a and 5b are put into the arranging jig.

[0010]

However, when the assembly process as shown in the above-mentioned prior art example is used, the following various problems occur. First of all,
Conventionally, the upper and lower electrode plates 6 are all manufactured by cutting a copper plate by a press working method and then nickel-plating it by a method such as barrel plating. Therefore, each electrode plate 6 is formed into a certain size according to a predetermined arrangement pattern. An arrangement jig for arranging is required.

In this regard, this type of thermoelectric conversion device 1
In general, it is generally necessary to arrange several tens to 250 pieces of the electrode plates 6, and therefore, in mass production, it can be said that there is a merit of introducing an arrangement automation device for the electrode plates 6 from the viewpoint of mass production efficiency. Since there is no merit in production, automation is difficult, and therefore the time required for assembly accounts for a large proportion of the manufacturing cost.

As in the above-mentioned conventional example, the semiconductor element 5
Although a skeleton structure in which a and 5b are directly connected to only the electrode plate 6 is used instead of the skeleton structure in which a direct bonding copper substrate in which the electrode plate 6 is formed in advance on the insulating substrate 8 is used, This direct bonding copper substrate has an electrode plate 6 in its manufacturing process.
Since it is formed at the same time, there is an advantage that the step for arranging the electrodes is not necessary, but naturally, the manufacturing efficiency cannot be reduced because the skeleton structure cannot be formed. In addition, the cost of the substrate itself is high.

Secondly, in the above conventional example, the copper plates constituting the upper and lower electrode plates 6 are cut and plated one by one in order to prevent the solder 7 from coming into contact with the copper plates. . In this case, it is assumed that the electrode plate 6 is continuous,
If this is cut at the connecting portion, there is a risk that the solder 7 may adhere to or contact the periphery of the electrode plate 6, particularly the side surface of the copper plate that is the cut surface during soldering.

Thirdly, in the conventional example, the N-type semiconductor element 5a is used.
When arranging the P-type semiconductor element 5b and the P-type semiconductor element 5b in a certain size and soldering them, a semiconductor element arranging jig for positioning is required. However, there is a problem in that the manufacturing cost is increased accordingly. Further, if this arranging jig is not used, as shown in FIG. 20, the N-type semiconductor element 5a and the P-type semiconductor element 5b are placed on the electrode plate 6 coated with the solder paste and applied from above. When reflow soldering is performed while applying pressure, the N-type semiconductor element 5a and the P-type semiconductor element 5b are laterally displaced from a predetermined position.

Fourth, in the conventional example, the semiconductor elements 5a, 5a
Since it is structurally difficult to cut the electrode plate 6 after soldering b of the electrode plate 6 to the electrode plate 6, it was necessary to arrange the single electrode plates 6 first. Further, as a method of cutting the electrode plate 6 in a state where the semiconductor elements 5a and 5b are soldered, thermal cutting with a laser beam or the like can be mentioned. When this method is used, melting of the solder 7 and the electrode plate 6 are performed. Since there is a risk of burns, etc., there is a technical problem that it must be done in an instant.

Fifth, in the conventional example, the N-type semiconductor element 5a is used.
In order to automatically arrange the P-type semiconductor elements 5b, separate equipment such as a bowl feeder, a linear feeder, and a vibrating parts feeder is required. In addition, since the parts feeder operates so as to align the semiconductor elements 5a and 5b while sending them by vibrating, the parts feeder is used when aligning a brittle and easily damaged material such as a thermoelectric material included in the object of the present application. , You need to be very careful not to damage the material.

The present invention has been made to solve the above-mentioned various problems, and a first object thereof is to greatly simplify the assembling process of a thermoelectric conversion device, and a semiconductor element. The second object is to surely prevent the damage of the elements when aligning.

[0018]

In order to achieve the above object, in a method for manufacturing a thermoelectric conversion device of the present invention, a plurality of N-type and P-type semiconductor elements for thermoelectric conversion are electrically connected alternately by using an electrode plate. In the method for manufacturing a thermoelectric conversion device connected in series with each other, as the electrode plate, a plurality of electrode portions provided corresponding to the respective semiconductor elements arranged to be connected to each other are connected via joint portions. While using the body type electrode plate, after connecting the integrated type electrode plate and each semiconductor element,
The joint portion is cut and separated.

More specifically, the N-type and P-type semiconductor elements are alternately arranged at intervals, and between the upper surfaces of the opposite-polarity semiconductor elements adjacent to each other on one side of each semiconductor element and on the other side. The plurality of N-type and P-type semiconductor elements are alternately electrically connected in series by soldering an electrode plate formed by plating a copper plate surface between the lower surfaces of adjacent semiconductor elements of opposite polarities. To do.

The electrode plate is provided with a plurality of electrode portions provided corresponding to the respective semiconductor elements arranged to be connected to each other and having a solder resist layer and positioning protrusions in the peripheral portion, and adjacent electrode portions. An integrated electrode plate that has a joint portion integrally formed with these electrode portions and having a cutting groove therebetween and is common to all semiconductor elements is used. Further, after connecting the upper and lower two integrated electrode plates and each semiconductor element, the upper and lower integrated electrode plates are independently cut from each other and the joint portion is cut and separated.

Further, it is desirable to use, as each semiconductor element, one obtained by adhering a semiconductor wafer on an adhesive sheet and then cutting it into an element shape by a dicing saw.

[0022]

According to the method of manufacturing the thermoelectric conversion device, first,
By using the integral type electrode plate, the size of each electrode portion in the electrode plate is regulated by the joint portion, so that the conventional arrangement work is unnecessary. Moreover, if the electrode plate is formed by a press-pressing method due to the presence of this joint portion, all the electrode portions can be simultaneously molded at the same time.

In this case, since the copper plate forming the electrode plate is exposed at the cut surface after the joint portion of the integrated electrode plate is cut, there is a risk of re-contact with solder, but a solder resist layer is provided. As a result, it is possible to prevent the solder from getting wet and spreading up to the electrode cutting surface on the side surface of the joint portion, and thus it is possible to reliably prevent contact with the electrode plate cross section.

Further, by providing the positioning protrusion,
When soldering N-type and P-type semiconductor elements, it is possible to prevent the elements from being displaced from a predetermined position on the electrode plate when these elements are pressed from above. In addition, the arrangement jig that has been conventionally required is not required.

Finally, after connecting the upper and lower two integrated electrode plates and the respective semiconductor elements, the upper and lower integrated electrode plates are cut and separated from each other independently of each other. However, in this case, it is possible to perform thermal cutting using laser light, at which time the lens focus of the laser is made shallow and the power is concentrated only on the surface to be cut of one electrode plate and the other electrode plate is cut. By cutting so as to disperse the power, the cutting stress generated at the joint between the semiconductor element and the solder can be minimized.

As described above, according to the above-described manufacturing method, by using the integrated electrode plate as the electrode for connecting the N-type and P-type semiconductor elements, the efficiency of only the semiconductor element and the electrode without the insulating substrate is improved. It is possible to greatly simplify the assembly process of a thermoelectric conversion device having a good skeleton structure.

Further, the cutting by sheet bonding eliminates the need for realignment for mounting the N-type semiconductor element and the P-type semiconductor element, and eliminates the risk of damage to the semiconductor element due to vibration applied for alignment. It

[0028]

Embodiments of the present invention will be described below with reference to the drawings. The thermoelectric conversion device targeted by the method of this embodiment is the thermoelectric conversion device 1 shown in FIG. 15 described above, that is, a plurality of N-type and P-type semiconductor elements 5a and 5b for thermoelectric conversion.
Are alternately arranged at intervals and each semiconductor element 5
a, the copper plate surface is plated between the upper surfaces of the opposite-polarity semiconductor elements 5a or 5b adjacent on one side and between the lower surfaces of the opposite-polarity semiconductor elements 5b or 5a adjacent on the other side. This is a device in which a plurality of N-type and P-type semiconductor elements 5a, 5b are alternately electrically connected in series by soldering the upper and lower electrodes formed by. In addition, in the present embodiment, the same components as those of the conventional example will be denoted by the same reference numerals.

FIG. 1 shows the structure of the upper integrated electrode plate in the embodiment of the thermoelectric converter according to the present invention, and FIG. 2 shows the lower integrated electrode plate. These integrated electrode plates 11 have a plurality of electrode portions 12 provided corresponding to the N-type and P-type semiconductor elements 5a and 5b arranged to be connected to each other, respectively, and a joint portion 13 (width 0.3-0.4m
(about m) and connected in a matrix, thickness 0.3
It is a 0.5 mm copper plate that is punched out with a press die and then processed. In addition, the removed copper plate has 2 electroless nickel plating.
About μm is applied, and gold / palladium coating as an anti-oxidation film, or solder pre-coating, etc. is further applied thereon.

In this embodiment, such an integrated electrode plate 1 as described above is used.
By using 1, the integral electrode plate 11
Since the respective electrode portions 12 in the inside are dimensionally regulated, the work of arranging the individually formed electrode plates 6 which is conventionally required is unnecessary, and the thin joint portion 13 allows the integrated electrode plate 1 to be formed.
In the case of No. 1, if the method of press punching is used, all the electrode portions 12 can be simultaneously molded at one time.

As shown in FIGS. 3 and 4, a solder resist layer 14 formed by printing a solder resist coating is formed on the peripheral portion of the upper surface of the integrated electrode plate 11. Specifically, each electrode portion 12 of the integrated electrode plate 11 and the N-type and P-type semiconductor element 5 are
The solder resist layer 14 is formed by screen-printing the solder resist coating on the shaded portion other than the square portion having a size slightly larger than the contact surface with a and 5b as the solder joint surface 12a.

5 and 6, the N-type and P-type semiconductor elements 5a are formed on the integrated electrode plate 11 provided with the solder resist layer 14.
The state where 5b is soldered is shown. As is clear from these figures, when the solder resist layer 14 is applied, the solder 7 shown by the diagonally upward-sloping line in the figure does not spread beyond the resist layer 14 and thus spreads to the electrode cutting surface 13a. There is no fear. Therefore, the metal diffusion of tin forming the solder and copper forming the integrated electrode plate 11 is prevented.

On the other hand, as shown in FIGS. 18 and 19, when the conventional example in which the means for solder resist is not applied to the surface of the electrode plate 6 is applied, cutting is performed at the joint portion shown by the imaginary line. In that case, there is a great possibility that the solder 7 gets wet and spreads from the end faces of the N-type semiconductor element 5a and the P-type semiconductor element 5b, as shown by the hatched portion, and reaches the electrode cutting surface 6a.

As shown in FIGS. 7 to 9, the integrated electrode plate 1
Positioning protrusions 15 are provided by pressing at four positions around the contacting portion between the 1 and the N-type and P-type semiconductor elements 5a and 5b. In this case, as in the conventional example shown in FIG.
If the electrode plate 6 does not have the protrusions 15, the N-type semiconductor elements 5a and P
When the type semiconductor element 5b is placed and reflow soldering is performed while applying pressure from above, the N type semiconductor element 5a and the P type semiconductor element 5b may be laterally displaced from a predetermined position.

On the other hand, if the positioning protrusions 15 are provided as in the present embodiment, as shown in FIG. 9, the N-type and P-type semiconductor elements 5a and 5b are prevented from being displaced from each other, and the upper direction shown by the arrow is shown. Therefore, it is possible to solder while applying pressure, and it is possible to prevent the displacement of the semiconductor elements 5a and 5b during soldering without preparing an element arranging jig.

In this way, the upper and lower two integrated electrode plates 1
After connecting the 1 and the N-type and P-type semiconductor elements 5a and 5b, the upper and lower integrated electrode plates 11 are separately cut into the joint portions 13 for each one. As shown in FIG. 10, the integrated electrode plate 11 is cut by a laser cutting machine 16.

In this case, of the two kinds of integrated electrode plates 11, if the upper integrated electrode plate is 11A and the lower integrated electrode plate is 11B, the N-type and P-type semiconductor elements 5a,
5b is sandwiched between the two 11A and 11B. Then, with respect to the upper integrated electrode plate 11A of the assembly to which the N-type and P-type semiconductor elements 5a and 5b are soldered, the depth of focus of the lens 17 that focuses the laser light of the laser cutting machine 16 is made shallow. The power is concentrated on the electrode surface of the upper integrated electrode plate 11A, that is, the upper surface of the joint portion 13, and instantaneously cut.

At this time, since the laser light is dispersed and the power is reduced to the electrode surface of the lower integrated electrode plate 11B, the influence of cutting is not exerted. The lower integrated electrode plate 11B is also instantaneously cut in the same manner as the upper integrated electrode plate 11A after adjusting the relative position between the laser cutting machine 16 and the assembly.

By the way, in this case, as shown in FIGS. 11 and 12, it is desirable to provide a V-shaped groove 18 for cutting in order to facilitate the cutting of the joint portion 13. The V-shaped groove 18 is formed in each of the joint portions 13 of the integrated electrode plate 6 by a pressing device. In the case where the V-shaped groove 18 is provided, when the joint portion 13 is cut by the laser cutting machine 16 or the like, if the V-shaped groove 18 is cut aiming, the thickness of the portion is thin, so that it can be cut in a short time. it can.

Next, the cutting of the semiconductor elements 5a and 5b from the wafer prior to soldering to the integrated electrode plate 11 will be described. 13A and 13B are schematic diagrams for explaining the process. FIG. 13A is a plane, FIG. 13B is a side surface, FIG. 13C is a dicing saw, and FIG. (E) shows the respective side surfaces.

The method shown in this figure is an example of a method of cutting the semiconductor elements 5a and 5b using an adhesive sheet.
As shown in (A) and (B), the plate-shaped semiconductor wafer 2 is placed on the ultraviolet curable pressure sensitive adhesive sheet 20 attached to the fixing ring 19.
1 is bonded, set on a dicing saw 22, and cut by cutting a part of the adhesive sheet 20 in the X and Y directions by a high-speed rotating blade (disc-shaped cutter) 23.

However, since the adhesive force of the adhesive sheet 20 is strong as it is, the cut semiconductor elements 5a and 5b cannot be easily peeled off. Therefore, the adhesive sheet 20 is irradiated with ultraviolet light to weaken the adhesive force of the adhesive sheet 20. This allows the element to be easily picked up from the adhesive sheet 20 by vacuum tweezers or the like. Since the cut semiconductor elements 5a and 5b are aligned on the adhesive sheet 20, there is no need to re-align them by using a vibrating bowl feeder, a linear feeder, or the like, and the semiconductor elements 5a and 5b can be automatically placed on the integrated electrode plate 11. Is possible.

The pressure-sensitive adhesive sheet 20 is not limited to the UV-curable pressure-sensitive adhesive sheet. For example, as shown in FIG. 14 (A), the general pressure-sensitive adhesive sheet 20 having a weak adhesive force is used to form a plate-shaped semiconductor wafer 21. 13 (E) is not full-cut as shown in FIG. 13 (E), but is cut with a thickness of several tens of μm left, and after cutting, as shown in FIG. 14 (B),
By expanding the adhesive sheet 20 in the outward direction, that is, by pulling it, it is possible to separate the remaining portion after cutting by several tens of μm and pick up the semiconductor elements 5a and 5b. By adopting the cutting method as described above, high-speed mounting is possible on the integrated electrode plate 11 to which the mounter for silicon chip, which is a semiconductor manufacturing apparatus, is applied.

[0044]

As described above, according to claim 1 of the present invention, since the size of each electrode part in the electrode plate is defined by the joint part by using the integral type electrode plate, the conventional electrode plate is used. The work of arranging such electrode plates becomes unnecessary. Moreover, if the electrode plate is formed by a press-pressing method due to the presence of this joint portion, all the electrode portions can be simultaneously molded at the same time. Therefore, it is possible to significantly simplify the assembly process of the thermoelectric conversion device having an efficient skeleton structure.

According to the second aspect, after the joint portion of the integrated type electrode plate is cut, the copper plate forming the electrode plate is exposed on the cut surface, so that there is a risk of re-contact with solder. By providing the layer, it is possible to prevent the solder from getting wet and spreading to the electrode cutting surface on the side surface of the joint portion. Therefore, it is possible to prevent metal diffusion of tin (solder) and copper without post-processing the nickel plating of the solder joint portion, and it is possible to secure reliability without increasing cost.

Further, since the positioning protrusion is provided,
When soldering N-type and P-type semiconductor elements, it is possible to prevent the elements from being displaced from a predetermined position on the electrode plate when these elements are pressed from above. Therefore,
It is possible to prevent displacement of the elements during soldering without preparing an element arranging jig, which simplifies the assembly process and reduces equipment jig costs.

Finally, after connecting the upper and lower two integrated electrode plates and each semiconductor element, the upper and lower integrated electrode plates are independently cut from each other to cut and separate the joint portion. However, in this case, it is possible to perform thermal cutting using laser light, at which time the lens focus of the laser is made shallow and the power is concentrated only on the surface to be cut of one electrode plate and the other electrode plate is cut. By cutting so as to disperse the power, the cutting stress generated at the joint between the semiconductor element and the solder can be minimized.

As described above, according to the above-mentioned manufacturing method, by using the integrated electrode plate as the electrode for connecting the N-type and P-type semiconductor elements, the efficiency of only the semiconductor element and the electrode without the insulating substrate is improved. It is possible to greatly simplify the assembly process of a thermoelectric conversion device having a good skeleton structure.

According to the third aspect, the re-alignment for mounting the elements is not necessary, and there is no need to worry about the damage of the elements due to the vibration applied for the alignment, which reduces the equipment cost and the assembly reliability. Improvements and easier docking with large high-speed mounters.

[Brief description of drawings]

FIG. 1 is a plan view showing an upper integrated electrode plate in an embodiment of a thermoelectric conversion device according to the present invention.

FIG. 2 is a plan view showing the lower integrated electrode plate of the same manner.

FIG. 3 is a main part plan view showing the integrated electrode plate in a state where a solder resist layer is formed by printing.

FIG. 4 is a side view of the main part.

FIG. 5 is a plan view showing a state in which a semiconductor element is soldered to an integrated type electrode plate provided with a solder resist layer.

FIG. 6 is a side view thereof.

FIG. 7 is a plan view of an essential part showing a state where a positioning protrusion is provided on the integrated electrode plate.

FIG. 8 is a side view of the main part.

FIG. 9 is a side view of essential parts showing a state in which a semiconductor element is set thereon.

FIG. 10 is a schematic side view of an essential part showing a state during cutting of an electrode plate by a laser cutting device.

FIG. 11 is a plan view of relevant parts showing a mode in which a V-shaped groove is provided to facilitate cutting of the joint.

FIG. 12 is a side view of the main part.

FIG. 13 is a schematic diagram for explaining one cutting process of a semiconductor element using an adhesive sheet.

FIG. 14 is a schematic diagram for explaining another cutting process of the semiconductor element using the adhesive sheet.

FIG. 15 is a schematic cross-sectional view showing the basic structure of a thermoelectric conversion device in which N-type semiconductor elements and P-type semiconductor elements are soldered to electrodes.

FIG. 16 is a plan view showing an arrangement example of a conventional upper electrode plate.

FIG. 17 is a plan view showing an arrangement example of a conventional lower electrode plate.

FIG. 18 is a plan view showing a state in which an element is soldered to an electrode when a solder resist is not applied.

FIG. 19 is a side view thereof.

FIG. 20 is a side view showing a conventional example in which a semiconductor element is soldered to an electrode plate having no protrusion.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Thermoelectric conversion device 5a N-type semiconductor element 5b P-type semiconductor element 7 Solder 11 Integrated electrode plate 12 Electrode part 13 Joint part 14 Solder resist layer 15 Positioning protrusion 18 Cutting V-shaped groove 20 Adhesive sheet 21 Semiconductor wafer 22 Dicing saw

Claims (3)

[Claims] 1. A method of manufacturing a thermoelectric conversion device in which a plurality of N-type and P-type semiconductor elements for thermoelectric conversion are electrically connected alternately in series by using electrodes, wherein the electrodes are arranged to be connected to each other. In addition to using an integrated electrode in which a plurality of electrode portions provided corresponding to each semiconductor element are respectively coupled via a joint portion, the joint portion is disconnected after the integrated electrode and each semiconductor element are connected. And a method for manufacturing a thermoelectric conversion device, characterized by separating. 2. A plurality of N-type and P-type semiconductor elements for thermoelectric conversion are alternately arranged at intervals, and one side of each semiconductor element has an upper surface of adjacent semiconductor elements of opposite polarity and the other side. In order to electrically connect the plurality of N-type and P-type semiconductor elements alternately by soldering the upper and lower electrodes plated on the copper plate surface between the lower surfaces of the adjacent semiconductor elements of opposite polarities. In the method of manufacturing a thermoelectric conversion device connected in series, a plurality of electrode portions provided as the upper and lower electrodes corresponding to the respective semiconductor elements arranged to be connected to each other and having a solder resist layer and a positioning protrusion in the peripheral portion. And a joint part that is integrally formed with these electrode parts and has a groove for cutting between adjacent electrode parts, and uses an integrated electrode that is common to all semiconductor elements,
After connecting the upper and lower two integrated electrodes and each semiconductor element, the upper and lower integrated electrodes are separately separated from each other, and the joint portion is cut.
A method for manufacturing a thermoelectric conversion device, characterized by separating. 3. A method for manufacturing a thermoelectric conversion device in which a plurality of N-type and P-type semiconductor elements for thermoelectric conversion are electrically connected in series alternately by using electrodes, wherein each of the semiconductor elements is:
A method for manufacturing a thermoelectric conversion device, characterized in that a semiconductor wafer bonded to an adhesive sheet and cut into an element shape with a dicing saw is used.