JPH0834192B2 - Heat treatment furnace for semiconductor wafers - Google Patents
Heat treatment furnace for semiconductor wafersInfo
- Publication number
- JPH0834192B2 JPH0834192B2 JP29207989A JP29207989A JPH0834192B2 JP H0834192 B2 JPH0834192 B2 JP H0834192B2 JP 29207989 A JP29207989 A JP 29207989A JP 29207989 A JP29207989 A JP 29207989A JP H0834192 B2 JPH0834192 B2 JP H0834192B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- furnace
- core tube
- heat treatment
- furnace core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 (1)発明の目的 [産業上の利用分野] 本発明は、半導体ウェーハの熱処理炉に関し、特に、
炉芯管本体から排出された排出ガスの全ガス圧と水素分
圧と酸素分圧とを検知した結果に応じて炉芯管本体の開
口部を開閉しかつ炉芯管本体に対する供給ガスを選択し
てなる半導体ウェーハの熱処理炉に関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Object of the Invention [Field of Industrial Application] The present invention relates to a heat treatment furnace for semiconductor wafers, and in particular,
The opening of the furnace core tube body is opened and closed and the supply gas to the furnace core tube body is selected according to the result of detecting the total gas pressure, hydrogen partial pressure, and oxygen partial pressure of the exhaust gas discharged from the furnace core tube body. The present invention relates to a heat treatment furnace for semiconductor wafers.
[従来の技術] 従来、この種の半導体ウェーハの熱処理炉としては、
たとえば、均熱管と加熱部材と断熱管とによって包囲さ
れた炉芯管本体の内部空間に対して炉蓋本体上に載置さ
れたウェーハ熱処理用治具に支持せしめた状態で収容し
たのち、適宜の熱処理ガスを供給することにより、半導
体ウェーハに対し適宜の熱処理を施してなる半導体ウェ
ーハの熱処理炉が提案されていた。[Prior Art] Conventionally, as a heat treatment furnace for this type of semiconductor wafer,
For example, after accommodating the inner space of the furnace core tube main body surrounded by the soaking tube, the heating member, and the heat insulating tube in a state of being supported by a wafer heat treatment jig placed on the furnace lid main body, There has been proposed a semiconductor wafer heat treatment furnace in which a semiconductor wafer is subjected to appropriate heat treatment by supplying the heat treatment gas.
[解決すべき問題点] しかしながら、従来の半導体ウェーハの熱処理炉で
は、熱処理ガスとして水素ガスを利用する場合、(i)
炉芯管本体の開口部のシールが不完全となると、炉芯管
本体の内部空間へ酸素ガスが侵入してしまう欠点があ
り、また(ii)炉芯管本体に対する半導体ウェーハの出
入に際し炉芯管本体の内部空間の不活性ガス(窒素ガス
など)による掃気が不完全で水素ガスの残留した状態で
炉芯管本体の開口部が開放されてしまう欠点もあり、結
果的に(iii)炉芯管本体の内部空間で酸素ガスと水素
ガスとが互いに反応して爆発を生じてしまう欠点があっ
た。[Problems to be Solved] However, in the conventional heat treatment furnace for semiconductor wafers, when hydrogen gas is used as the heat treatment gas, (i)
Incomplete sealing of the opening of the furnace core tube body has the drawback that oxygen gas will enter the internal space of the furnace core tube body, and (ii) the furnace core when the semiconductor wafer is taken in and out of the furnace core tube body. There is also a drawback that the opening of the furnace core tube body is opened in the state where hydrogen gas remains because the scavenging by the inert gas (nitrogen gas etc.) of the inner space of the tube body is incomplete, resulting in (iii) furnace There is a drawback that oxygen gas and hydrogen gas react with each other in the inner space of the core tube body to cause an explosion.
そこで、本発明は、これらの欠点を除去すべく、炉芯
管本体から排出された排出ガスの全ガス圧と水素分圧と
酸素分圧とを検知した結果に応じて炉芯管本体の開口部
を開閉しかつ炉芯管本体に対する供給ガスを選択してな
る半導体ウェーハの熱処理炉を提供せんとするものであ
る。Therefore, in order to eliminate these drawbacks, the present invention provides an opening of the furnace core tube body according to the result of detecting the total gas pressure, the hydrogen partial pressure, and the oxygen partial pressure of the exhaust gas discharged from the furnace core tube body. It is intended to provide a heat treatment furnace for semiconductor wafers, in which a portion is opened and closed and a supply gas to the furnace core tube main body is selected.
(2)発明の構成 [問題点の解決手段] 本発明により提供される問題点の解決手段は、 「加熱部材によって包囲されかつ水素ガスが熱処理ガス
として供給される炉芯管本体の内部空間に対し半導体ウ
ェーハをウェーハ熱処理用治具に支持して収容した状態
で炉蓋によって炉芯管本体の開口端部を閉鎖することに
より半導体ウェーハを熱処理してなる半導体ウェーハの
熱処理炉において、 (a)炉芯管本体から排出された排出ガスの水素分圧と
酸素分圧と全ガス圧とを検知するための検知装置と、 (b)検知装置の検知した水素分圧と酸素分圧と全ガス
圧とに応じてそれぞれ第1ないし第3の制御信号を発生
するための制御回路と、 (c)第1の制御信号に応じて炉芯管本体の開口端部に
配置された炉蓋を開閉するための駆動装置と、 (d)第2,第3の制御信号に応じて炉芯管本体の内部空
間に対する供給ガスを選択するためのガス選択装置と を備えてなることを特徴とする半導体ウェーハの熱処理
炉」 である。(2) Configuration of the Invention [Means for Solving the Problems] The means for solving the problems provided by the present invention include: “In the inner space of the furnace core tube body surrounded by the heating member and supplied with hydrogen gas as the heat treatment gas; On the other hand, in a heat treatment furnace for semiconductor wafers, in which the semiconductor wafer is heat-treated by closing the open end of the furnace core tube main body with the furnace lid in a state where the semiconductor wafer is supported and accommodated in a wafer heat treatment jig, A detector for detecting the hydrogen partial pressure, oxygen partial pressure, and total gas pressure of the exhaust gas discharged from the furnace core tube body, and (b) the hydrogen partial pressure, oxygen partial pressure, and total gas detected by the detector. A control circuit for generating first to third control signals in response to the pressure, and (c) opening and closing a furnace lid arranged at the open end of the furnace core body in response to the first control signal. A driving device for ) A heat treatment furnace for semiconductor wafers, comprising: a gas selection device for selecting a supply gas to the inner space of the furnace core tube body in accordance with second and third control signals.
[作用] 本発明にかかる半導体ウェーハの熱処理炉は、加熱部
材によって包囲されかつ水素ガスが熱処理ガスとして供
給される炉芯管本体の内部空間に対し半導体ウェーハを
ウェーハ熱処理用治具に支持して収容した状態で炉蓋に
よって炉芯管本体の開口端部を閉鎖することにより半導
体ウェーハを熱処理してなる半導体ウェーハの熱処理炉
であって、特に、炉芯管本体から排出された排出ガスの
水素分圧と酸素分圧と全ガス圧とを検知装置で検知して
おき、検知装置の検知した水素分圧と酸素分圧と全ガス
圧とに応じてそれぞれ制御回路で第1ないし第3の制御
信号を発生し、第1の制御信号に応じて炉芯管本体の開
口端部に配置された炉蓋を駆動装置で開閉し、第2,第3
の制御信号に応じて炉芯管本体の内部空間に対する供給
ガスをガス選択装置で選択してなるので、 (i)炉芯管本体の内部空間に対し水素ガスが存在して
いる期間内に酸素ガスが誤って侵入することを防止する
作用 をなし、また (ii)炉芯管本体に亀裂などの異常が生じた際にも水素
ガスを直ちに排除する作用 をなし、ひいては (iii)炉芯管本体の内部空間における水素ガスと酸素
ガスとの反応に伴なう爆発事故を防止する作用 をなす。[Operation] In the semiconductor wafer heat treatment furnace according to the present invention, the semiconductor wafer is supported by the wafer heat treatment jig in the inner space of the furnace core tube body surrounded by the heating member and supplied with hydrogen gas as the heat treatment gas. A heat treatment furnace for semiconductor wafers, in which a semiconductor wafer is heat-treated by closing an open end of a furnace core tube body with a furnace lid in a housed state, in particular, hydrogen of exhaust gas discharged from the furnace core tube body. The partial pressure, the oxygen partial pressure, and the total gas pressure are detected by the detection device, and the control circuit detects the first partial pressure, the third partial pressure, the oxygen partial pressure, and the total gas pressure. A control signal is generated, and in response to the first control signal, the drive device opens and closes the furnace lid arranged at the open end of the furnace core tube main body.
Since the gas selection device selects the supply gas for the internal space of the furnace core tube body in accordance with the control signal of (1), (i) oxygen is supplied to the internal space of the furnace core tube body during the period when hydrogen gas is present. It has the function of preventing accidental intrusion of gas, and (ii) has the function of immediately eliminating hydrogen gas even when an abnormality such as a crack occurs in the core tube body, and (iii) the core tube. It acts to prevent an explosion accident that accompanies the reaction between hydrogen gas and oxygen gas in the internal space of the main unit.
[実施例] 次に、本発明にかかる半導体ウェーハの熱処理炉につ
いて、その好ましい実施例を挙げ、添付図面を参照しつ
つ、具体的に説明する。しかしながら、以下に説明する
実施例は、本発明の理解を容易化ないし促進化するため
に記載されるものであって、本発明を限定するために記
載されるものではない。換言すれば、以下に説明される
実施例において開示される各部材は、本発明の精神なら
びに技術的範囲に属する全ての設計変更ならびに均等物
置換を含むものである。[Examples] Next, a heat treatment furnace for semiconductor wafers according to the present invention will be specifically described with reference to the accompanying drawings and preferred examples thereof. However, the examples described below are provided for facilitating or facilitating the understanding of the present invention, and not for limiting the present invention. In other words, each member disclosed in the embodiments described below includes all design changes and equivalent replacements within the spirit and technical scope of the present invention.
(添付図面の説明) 第1図は、本発明にかかる半導体ウェーハの熱処理炉
の一実施例を示す断面図であって、特に、縦型熱処理炉
10について例示されており、炉芯管本体21の開口端部21
Aが炉蓋本体71によって閉鎖されている状態を示してい
る。(Description of the accompanying drawings) FIG. 1 is a cross-sectional view showing an embodiment of a heat treatment furnace for semiconductor wafers according to the present invention, and particularly, a vertical heat treatment furnace.
10 is illustrated, the open end 21 of the furnace core tube body 21
The state where A is closed by the furnace lid body 71 is shown.
(実施例の構成) まず、第1図を参照しつつ、本発明にかかる半導体ウ
ェーハの熱処理炉の一実施例について、その構成を詳細
に説明する。第1図には、以下の説明を簡潔とするため
に、本発明にかかる半導体ウェーハの熱処理炉として縦
型熱処理炉が例示されているが、本発明をこれに限定す
る意図はない。(Structure of Embodiment) First, the structure of an embodiment of a semiconductor wafer heat treatment furnace according to the present invention will be described in detail with reference to FIG. Although a vertical heat treatment furnace is illustrated in FIG. 1 as a heat treatment furnace for semiconductor wafers according to the present invention for the sake of simplicity of the following description, the present invention is not intended to be limited thereto.
10は、本発明にかかる半導体ウェーハの縦型熱処理炉
であって、半導体ウェーハを熱処理するための炉芯管装
置20と、炉芯管装置20の周囲に適宜の間隔を介して所望
により配設されており炉芯管装置20において均熱領域を
確保容易とするための均熱管30と、均熱管30の周囲に配
設されており外部の電源から与えられた電力によって発
熱し均熱管30を介して炉芯管装置20を加熱するための加
熱部材40と、加熱部材40の周囲に配設されており加熱部
材40によって発生された熱が外部環境へ逃げるのを防止
するための断熱管50と、炉芯管装置20ないし断熱管50を
保持するためにステンレスなどの適宜の材料で形成され
たハウジング60と、炉芯管装置20の開口を閉鎖してその
内部空間21Aを外部環境から隔離するための炉蓋装置70
と、炉芯管装置20および炉蓋装置70に対して配設されて
おり炉芯管装置20から排出される排出ガスに応じて炉芯
管装置20に供給される熱処理ガスを調節しかつ炉蓋装置
70を昇降するに所要の制御信号を発生するための制御回
路80とを備えている。 10 disposed is a vertical heat treatment furnace of a semiconductor wafer according to the present invention, a furnace core tube device 20 for heat treating semiconductor wafers, optionally via an appropriate gap around the furnace core tube 20 a soaking tube 30 for facilitating securing a soaking section in which a furnace core tube 20 is, the soaking tube 30 generates heat by power supplied from an external power source is disposed around the liner tube 30 thermal insulation pipe 50 in order to prevent over heating member 40 for heating the furnace tube device 20, that the heat generated by which the heating member 40 is disposed around the heating member 40 from escaping to the external environment A housing 60 formed of an appropriate material such as stainless steel for holding the furnace core tube device 20 or the heat insulating tube 50 , and closing the opening of the furnace core tube device 20 to isolate the internal space 21A from the external environment. Furnace cover device 70 for
And the heat treatment gas supplied to the furnace core tube apparatus 20 according to the exhaust gas discharged from the furnace core tube apparatus 20, which is arranged for the furnace core tube apparatus 20 and the furnace lid apparatus 70 , and the furnace. Lid device
And a control circuit 80 for generating a control signal required to raise and lower 70 .
炉芯管装置20は、石英などの適宜の材料で形成されて
おり内部空間21Aに形成された均熱領域で半導体ウェー
ハを熱処理するための炉芯管本体21と、断熱管50の外部
から炉芯管本体21の外周面まで延長されたのち炉芯管本
体21の外周面にそって頂部まで延長されかつ頂部におい
て内部空間21Aに対して開口されており適宜の熱処理ガ
ス(たとえば水素ガス)あるいは掃気ガス(たとえば窒
素ガス)を供給ガスとして供給するためのガス供給管22
と、ガス供給管22に対して配設されており炉芯管本体21
の内部空間21Aに対して供給される供給ガスを制御信号S
11,S12に応じて選択するためのガス選択装置23と、炉芯
管本体21の開口端部21Bの近傍に開口されかつ断熱管50
の外部へ延長されており使用済の熱処理ガスあるいは掃
気ガスを排出ガスとして炉芯管本体21の内部空間21Aか
ら外部へ向けて排除するためのガス排出管24と炉芯管本
体21の開口端部21Bの周面に形成されておりハウジング6
0によって支持するための支持突部25とを包有してい
る。ガス供給管22およびガス排出管24のうち炉芯管本体
21の近傍に位置する部分は、それぞれ、なるべく多く石
英などの高温使用可能な材料で形成されていることが、
好ましい。The furnace core tube device 20 is formed of an appropriate material such as quartz, and a furnace core tube main body 21 for heat-treating a semiconductor wafer in a soaking region formed in the internal space 21A, and a furnace from the outside of the heat insulating tube 50. After extending to the outer peripheral surface of the core tube main body 21 and then extending to the top along the outer peripheral surface of the furnace core tube main body 21 and opening to the internal space 21A at the top, an appropriate heat treatment gas (for example, hydrogen gas) or Gas supply pipe 22 for supplying scavenging gas (for example, nitrogen gas) as a supply gas
And the furnace core tube main body 21 provided for the gas supply pipe 22.
Control signal S to control the supply gas supplied to the internal space 21A of
11 , a gas selection device 23 for selecting according to S 12 , and a heat insulating pipe 50 opened near the open end 21B of the furnace core body 21.
Of the heat treatment gas or scavenging gas that has been extended to the outside of the furnace core tube body 21 and is exhausted from the inner space 21A of the furnace core tube body 21 toward the outside, and the open end of the furnace core tube body 21. Housing 6 is formed on the peripheral surface of part 21B.
It has a supporting projection 25 for supporting by 0 . Of the gas supply pipe 22 and the gas discharge pipe 24, the furnace core tube main body
Each of the parts located near 21 is formed of a material such as quartz that can be used at high temperature, as much as possible.
preferable.
均熱管30は、炭化珪素などの適宜の材料によって作成
されており、炉芯管装置20の均熱領域を確保ないしは拡
張すべく炉芯管装置20の全長を包囲するよう配設されて
いる。Liner tube 30 is arranged so as to surround have been prepared, the total length of the furnace core tube 20 to ensure or extend the soaking zone of the furnace core tube 20 by a suitable material such as silicon carbide.
加熱部材40は、均熱管30の外方に配設されており、炉
芯管装置20の内部空間21Aにおいてその軸方向にそって
均熱領域を形成し確保するために適宜に配設されてい
る。The heating member 40 is arranged outside the soaking tube 30 , and is appropriately arranged to form and secure a soaking area along the axial direction in the internal space 21A of the furnace core tube device 20. There is.
断熱管50は、グラスファイバなどの適宜の断熱材料に
よって形成されており、炉芯管装置20,均熱管30および
加熱部材40を全体として包囲している。The heat insulating tube 50 is made of an appropriate heat insulating material such as glass fiber, and surrounds the furnace core tube device 20 , the soaking tube 30, and the heating member 40 as a whole.
ハウジング60は、均熱管30および断熱管50の下端部を
上面で支持するための支持部材本体61と、支持部材本体
61の下面に対して取付けられており中央開口部62aの段
部端面によって炉芯管本体21の開口端部21Bの周囲に形
成された支持突部25の下面を支持するための炉芯管本体
支持部材62と、炉芯管本体支持部材62の中央開口部62a
の段部周面に形成された配設溝に配設されており炉芯管
本体21の開口端部21Bの周面に形成された支持突部25と
の間をシールするためのOリング63と、支持部材61の下
面に対して取付けられており炉芯管本体支持部材62の周
囲を包囲しかつ炉蓋装置70が炉芯管本体21の開口端部21
Bの端面に対して接近し離間することを許容するための
開口部64aが中央部に形成されており炉蓋装置70の昇降
による炉芯管本体21の開閉に伴なって漏出された熱処理
ガスあるいは掃気ガスを捕捉するためのガス捕捉部材64
と、ガス捕捉部材64の側面に一端部が開口されておりガ
ス捕捉部材64によって捕捉された漏出ガスを外部に向け
て排出するためのガス排出管65とを備えている。The housing 60 includes a support member main body 61 for supporting the lower ends of the heat equalizing pipe 30 and the heat insulating pipe 50 on the upper surface, and a support member main body.
A furnace core tube main body for supporting the lower surface of a support projection 25 formed around the opening end 21B of the furnace core tube main body 21 by the step end surface of the central opening 62a attached to the lower surface of 61. Support member 62 and central opening 62a of core tube main body support member 62
An O-ring 63 that is disposed in a disposition groove formed on the peripheral surface of the stepped portion and that seals between the support projection 25 formed on the peripheral surface of the open end 21B of the furnace core body 21. And is attached to the lower surface of the support member 61 to surround the periphery of the furnace core tube main body support member 62 and the furnace lid device 70 to open the end 21 of the core tube main body 21.
An opening 64a is formed in the center to allow the end face of B to approach and separate from the end face of B, and the heat treatment gas leaked along with the opening and closing of the furnace core tube body 21 when the furnace lid device 70 is moved up and down. Alternatively, a gas capturing member 64 for capturing scavenging gas
And a gas discharge pipe 65 having one end opened at the side surface of the gas capturing member 64 and for discharging the leaked gas captured by the gas capturing member 64 toward the outside.
炉蓋装置70は、炉芯管本体21の開口端部21Bの端面に
対して直接に当接される石英もしくは炭化珪素などの高
温使用可能な高純度材料によって形成された炉蓋本体71
と、炉蓋本体71を保持するためのステンレスなどの適宜
の材料で形成された炉蓋保持部材72と、炉蓋保持部材72
の下面を弾性部材(図示せず)を介して支持しており炉
蓋本体71をガス捕捉部材64の開口部64aを介して炉芯管
本体21の開口端部21Bに向けて接近し離間せしめるため
の炉蓋移動部材73と、炉蓋移動部材73の一端部に対して
配設されており駆動装置74によって制御信号S13に応じ
て駆動され炉蓋移動部材73を昇降移動せしめるための駆
動シャフト75と、駆動シャフト75と同様に炉蓋移動部材
73の一端部に対して配設されており炉蓋移動部材73の昇
降移動を安定化するための案内シャフト76と、炉芯管本
体21の開口端部21Bの下端面に炉蓋本体71の上面が当接
されたとき炉蓋保持部材72の上面と炉芯管本体支持部材
62の下面との間でシールを確保するために炉蓋保持部材
72の上面に形成された配設溝に配設されたOリング77と
を包有している。The furnace lid device 70 is made of a high-purity material that can be used at high temperature, such as quartz or silicon carbide, that is in direct contact with the end surface of the open end 21B of the furnace core body 21.
A furnace lid holding member 72 made of an appropriate material such as stainless steel for holding the furnace lid main body 71, and the furnace lid holding member 72.
The lower surface of the furnace lid body 71 is supported via an elastic member (not shown), and the furnace lid body 71 is moved toward and away from the open end portion 21B of the furnace core tube body 21 via the opening portion 64a of the gas capturing member 64. For moving the furnace lid moving member 73 and one end of the furnace lid moving member 73 and driven by the drive device 74 according to the control signal S 13 to move the furnace lid moving member 73 up and down. Like the shaft 75 and the drive shaft 75, the furnace lid moving member
A guide shaft 76 that is provided for one end of the furnace lid moving member 73 to stabilize the vertical movement of the furnace lid moving member 73, and the furnace lid body 71 on the lower end surface of the open end 21B of the furnace core body 21. When the upper surface is abutted, the upper surface of the furnace lid holding member 72 and the furnace core tube main body supporting member
Furnace lid holding member to ensure a seal with the underside of 62
It also includes an O-ring 77 disposed in a disposition groove formed on the upper surface of 72.
制御回路80は、ガス排出管24に対して配設されており
排出ガス中に含まれる酸素分圧POを測定するための酸素
分圧センサと水素分圧PHを検出するための水素分圧セン
サと排出ガスの全ガス圧Pを検知するための全ガス圧セ
ンサとを包有するガス圧検知装置81と、ガス圧検知装置
81に接続されており検知結果(すなわち酸素分圧PO,水
素分圧PHおよび全ガス圧P)に応じてガス選択装置23を
制御するための制御信号S11,S12と駆動装置74を制御す
るための他の制御信号S13とを発生するための制御回路8
2とを包有している。The control circuit 80 is provided for the gas exhaust pipe 24 and has an oxygen partial pressure sensor for measuring an oxygen partial pressure P O contained in the exhaust gas and a hydrogen partial pressure for detecting the hydrogen partial pressure P H. A gas pressure detection device 81 including a pressure sensor and a total gas pressure sensor for detecting the total gas pressure P of exhaust gas, and a gas pressure detection device
The control signals S 11 and S 12 for controlling the gas selection device 23 and the drive device 74, which are connected to 81, are used to control the gas selection device 23 in accordance with the detection results (that is, oxygen partial pressure P O , hydrogen partial pressure P H and total gas pressure P). Control circuit 8 for generating another control signal S 13 for controlling
It contains 2 and.
(実施例の作用) 更に、本発明にかかる半導体ウェーハの熱処理炉の一
実施例について、第1図に例示した縦型熱処理炉を参照
し、かつ第1表を参照しつつ、その作用を詳細に説明す
る。(Operation of Embodiment) Further, regarding one embodiment of the heat treatment furnace for semiconductor wafers according to the present invention, the operation will be described in detail with reference to the vertical heat treatment furnace illustrated in FIG. 1 and with reference to Table 1. Explained.
掃気動作‥水素ガス排除‥窒素ガス雰囲気 制御回路82は、炉芯管本体21の内部空間21Aにおける
半導体ウェーハの熱処理に関する一連の作業を開始する
にあたり、まず、制御信号S11を低レベルに維持しつ
つ、制御信号S12を高レベルとする。Scavenging operation ...... Hydrogen gas elimination ...... Nitrogen gas atmosphere The control circuit 82 first maintains the control signal S 11 at a low level before starting a series of work related to the heat treatment of the semiconductor wafer in the internal space 21A of the furnace core body 21. Meanwhile, the control signal S 12 is set to the high level.
ガス選択装置23は、制御信号S12が高レベルとなった
ことに対応して窒素ガスの供給を開始する。The gas selection device 23 starts the supply of nitrogen gas in response to the control signal S 12 becoming high level.
窒素ガスは、ガス供給管22によって矢印Aで示すごと
く案内されたのち、炉芯管本体21の頂部からその内部空
間21Aに向けて供給される。The nitrogen gas is guided by the gas supply pipe 22 as shown by the arrow A, and then supplied from the top of the furnace core tube main body 21 toward the internal space 21A thereof.
炉芯管本体21の内部空間21Aに供給された窒素ガス
は、内部空間21A内を矢印Bで示すごとく移動したの
ち、矢印Cで示すごとくガス排出管24に向けて案内され
る。これに伴って、炉芯管本体21の内部空間21Aに充満
していた残留ガス(たとえば水素ガス)が、ガス排出管
24に向けて掃気される。The nitrogen gas supplied to the inner space 21A of the furnace core tube body 21 moves inside the inner space 21A as indicated by arrow B, and then is guided toward the gas discharge pipe 24 as indicated by arrow C. Along with this, the residual gas (for example, hydrogen gas) filled in the internal space 21A of the furnace core tube main body 21 becomes
Scavenged towards 24.
窒素ガスおよび水素ガスは、ガス排出管24によって矢
印Dで示すごとく炉芯管本体21の外部へ排出される。The nitrogen gas and the hydrogen gas are discharged to the outside of the furnace core tube main body 21 by the gas discharge pipe 24 as shown by an arrow D.
窒素ガスによる水素ガスの掃気が進行すると、ガス圧
検知装置81で検知されている水素分圧PHが徐々に低下す
る。As the scavenging of hydrogen gas with nitrogen gas progresses, the hydrogen partial pressure P H detected by the gas pressure detection device 81 gradually decreases.
炉入動作 炉芯管本体21の内部空間21Aが窒素ガスによって充満
されると、水素分圧PHが基準水素分圧Hよりも小さく
なる。これに対応して、制御回路82は、制御信号S13を
所定の期間だけ高レベルとする。Furnace entry operation When the internal space 21A of the furnace core tube body 21 is filled with nitrogen gas, the hydrogen partial pressure P H becomes lower than the reference hydrogen partial pressure H. In response to this, the control circuit 82 sets the control signal S 13 to the high level for a predetermined period.
駆動装置74は、制御信号S13が高レベルとなったこと
に対応して駆動シャフト75を駆動することにより、炉蓋
移動部材73を矢印Y方向に向けて移動して所定の位置ま
で降下せしめ、かつ矢印X方向に向けて移動して当初の
位置まで上昇せしめる。The drive device 74 drives the drive shaft 75 in response to the high level of the control signal S 13 to move the furnace lid moving member 73 in the arrow Y direction and lower it to a predetermined position. , And move in the direction of the arrow X to raise it to the initial position.
このとき、その降下位置において、半導体ウェーハを
保持したウェーハ熱処理用治具(図示せず)が、適宜の
作業具によって炉蓋移動部材73に保持された炉蓋本体71
に対し載置されるので、炉蓋移動部材73が当初の位置ま
で上昇されたとき、熱処理すべき半導体ウェーハが、炉
芯管本体21の内部空間21Aに対して挿入されたこととな
る。At this time, in the lowered position, the wafer heat treatment jig (not shown) holding the semiconductor wafer is held by the furnace lid main body 71 held by the furnace lid moving member 73 by an appropriate working tool.
Therefore, when the furnace lid moving member 73 is raised to the initial position, the semiconductor wafer to be heat-treated is inserted into the internal space 21A of the furnace core tube body 21.
掃気動作‥酸素ガス排除 炉芯管本体21の内部空間21Aには、その開口部21Bが炉
蓋本体71によって閉鎖されたのちも、ウェーハ熱処理用
治具の挿入に際して侵入した酸素ガスを掃気するため
に、窒素ガスが供給され続ける。これにより、酸素ガス
な、窒素ガスによりガス排出管24を介して徐々に掃気さ
れる。Scavenging operation: Oxygen gas elimination In order to scavenge the oxygen gas that has entered when the wafer heat treatment jig is inserted even after the opening 21B is closed in the inner space 21A of the furnace core tube body 21 by the furnace lid body 71. Then, nitrogen gas is continuously supplied. As a result, nitrogen gas such as oxygen gas is gradually scavenged through the gas discharge pipe 24.
制御回路82は、ガス圧検知装置81の検知した酸素分圧
POが基準酸素分圧Oを超えている限り、制御信号S12
を高レベルに維持する。The control circuit 82 uses the oxygen partial pressure detected by the gas pressure detection device 81.
As long as P O exceeds the reference oxygen partial pressure O , the control signal S 12
Maintain a high level.
このため、ガス選択装置23は、酸素分圧POが基準酸素
分圧Oよりも小さくなるまで、炉芯管本体21の内部空
間21Aに対して窒素ガスを供給し続ける。Therefore, the gas selection device 23 continues to supply the nitrogen gas to the internal space 21A of the furnace core tube body 21 until the oxygen partial pressure P O becomes lower than the reference oxygen partial pressure O.
掃気動作‥窒素ガス排除 ガス圧検知装置81によって検知されている酸素分圧PO
が基準酸素分圧Oよりも小さくなると、制御回路82
は、制御信号S11を高レベルとし、かつ制御信号S12を低
レベルとする。Scavenging operation: Oxygen partial pressure P O detected by nitrogen gas elimination gas pressure detection device 81
Is smaller than the reference oxygen partial pressure O , the control circuit 82
Causes the control signal S 11 to be high level and the control signal S 12 to be low level.
ガス選択部材23は、制御信号S12が低レベルとなった
ことに対応して窒素ガスの供給を停止し、次いで制御信
号S11が高レベルとなったことに対応して水素ガスの供
給を開始する。The gas selection member 23 stops the supply of nitrogen gas in response to the control signal S 12 becoming low level, and then supplies the hydrogen gas in response to the control signal S 11 becoming high level. Start.
水素ガスは、ガス供給管22によって矢印Aで示すごと
く案内されたのち、炉芯管本体21の頂部からその内部空
間21Aに向けて供給される。The hydrogen gas is guided by the gas supply pipe 22 as shown by an arrow A, and then supplied from the top of the furnace core tube main body 21 toward the internal space 21A thereof.
炉芯管本体21の内部空間21Aに供給された水素ガス
は、内部空間21A内を矢印Bで示すごとく移動したの
ち、矢印Cで示すごとくガス排出管24に向けて案内され
る。これに伴って、炉芯管本体21の内部空間21Aに充満
していた窒素ガスが、ガス排出管24に向けて掃気され
る。The hydrogen gas supplied to the internal space 21A of the furnace core body 21 moves inside the internal space 21A as indicated by arrow B, and is then guided toward the gas discharge pipe 24 as indicated by arrow C. Along with this, the nitrogen gas filling the internal space 21A of the furnace core tube body 21 is scavenged toward the gas discharge pipe 24.
窒素ガスおよび水素ガスは、ガス排出管24によって矢
印Dで示すごとく炉芯管本体21の外部へ排出される。The nitrogen gas and the hydrogen gas are discharged to the outside of the furnace core tube main body 21 by the gas discharge pipe 24 as shown by an arrow D.
水素ガスによる窒素ガスの掃気が進行すると、ガス圧
検知装置81で検知されている水素分圧PHが徐々に上昇す
る。When progresses scavenging of the nitrogen gas with hydrogen gas, a hydrogen partial pressure P H being sensed by the gas pressure detecting device 81 is gradually increased.
熱処理動作 ガス圧検知装置81によって検知された水素分圧PHが基
準水素分圧Hよりも大きくなりかつ全ガス圧Pが基準
全ガス圧よりも大きくなったのち、半導体ウェーハの
熱処理動作が開始される。Heat treatment operation After the hydrogen partial pressure P H detected by the gas pressure detection device 81 becomes larger than the reference hydrogen partial pressure H and the total gas pressure P becomes larger than the reference total gas pressure, the heat treatment operation of the semiconductor wafer is started. To be done.
すなわち、適宜の熱処理ガス(たとえばアルゴンガ
ス)が、水素ガスとともにガス選択装置23からガス供給
管22を介して炉芯管本体21の内部空間21Aに対して供給
され始める。That is, an appropriate heat treatment gas (eg, argon gas) starts to be supplied together with hydrogen gas from the gas selection device 23 to the internal space 21A of the furnace core tube body 21 via the gas supply pipe 22.
ウェーハ熱処理用治具に保持されている半導体ウェー
ハは、これにより、炉芯管本体21の内部空間21Aにおい
て適宜の熱処理が施される。As a result, the semiconductor wafer held by the wafer heat treatment jig is appropriately heat-treated in the internal space 21A of the furnace core tube body 21.
ここで、ガス圧検知装置81の検知した全ガス圧Pが基
準全ガス圧よりも大きく維持されている根拠は、炉芯
管本体21に亀裂などの異常が生じたとき外部より酸素ガ
スが侵入することを回避することにある。Here, the reason why the total gas pressure P detected by the gas pressure detection device 81 is maintained higher than the reference total gas pressure is that oxygen gas enters from the outside when an abnormality such as a crack occurs in the furnace core body 21. To avoid doing.
掃気動作‥水素ガス排除 半導体ウェーハの熱処理動作が終了すると、ガス選択
装置23から炉芯管本体21の内部空間21Aに対する熱処理
ガスの供給が停止され、また炉芯管本体21に亀裂などの
異常が生ずると、水素ガスが炉芯管本体21から漏出する
ので、ガス圧検知装置81で検知されている全ガス圧Pが
基準全ガス圧よりも小さくなる。これに応じて、制御
回路82は、制御信号S11を低レベルとし、かつ制御信号S
12を高レベルとする。Scavenging operation ... Hydrogen gas elimination When the heat treatment operation of the semiconductor wafer is completed, the supply of the heat treatment gas from the gas selector 23 to the internal space 21A of the furnace core tube body 21 is stopped, and the furnace core tube body 21 is not cracked or otherwise abnormal. When it occurs, hydrogen gas leaks from the furnace core tube main body 21, so that the total gas pressure P detected by the gas pressure detection device 81 becomes smaller than the reference total gas pressure. In response to this, the control circuit 82 sets the control signal S 11 to the low level and
12 is a high level.
ガス選択装置23は、制御信号S11が低レベルとなった
ことに対応して水素ガスの供給を停止し、次いで制御信
号S12が高レベルとなったことに対応して窒素ガスの供
給を開始する。The gas selection device 23 stops the supply of hydrogen gas in response to the low level of the control signal S 11 , and then supplies the nitrogen gas in response to the high level of the control signal S 12. Start.
窒素ガスは、ガス供給管22によって矢印Aで示すごと
く案内されたのち、炉芯管本体21の頂部からその内部空
間21Aに向けて供給される。The nitrogen gas is guided by the gas supply pipe 22 as shown by the arrow A, and then supplied from the top of the furnace core tube main body 21 toward the internal space 21A thereof.
炉芯管本体21の内部空間21Aに供給された窒素ガス
は、内部空間21A内を矢印Bで示すごとく移動したの
ち、矢印Cで示すごとくガス排出管24に向けて案内され
る。これに伴って、炉芯管本体21の内部空間21Aに充満
していた水素ガスが、ガス排出管24に向けて掃気され
る。The nitrogen gas supplied to the inner space 21A of the furnace core tube body 21 moves inside the inner space 21A as indicated by arrow B, and then is guided toward the gas discharge pipe 24 as indicated by arrow C. Along with this, the hydrogen gas filled in the internal space 21A of the furnace core body 21 is scavenged toward the gas discharge pipe 24.
窒素ガスおよび水素ガスは、ガス排出管24によって矢
印Dで示すごとく炉芯管本体21の外部へ排出される。The nitrogen gas and the hydrogen gas are discharged to the outside of the furnace core tube main body 21 by the gas discharge pipe 24 as shown by an arrow D.
窒素ガスによる水素ガスの掃気が進行すると、ガス圧
検知装置81で検知されている水素分圧PHが徐々に低下す
る。As the scavenging of hydrogen gas with nitrogen gas progresses, the hydrogen partial pressure P H detected by the gas pressure detection device 81 gradually decreases.
炉出動作 炉芯管本体21の内部空間21Aが窒素ガスによって充満
されると、水素分圧PHが、基準水素分圧Hよりも小さ
くなる。これに対応して、制御回路82は、制御信号S13
を所定の期間だけ高レベルとする。When the internal space 21A of the furnace core tube body 21 is filled with nitrogen gas, the hydrogen partial pressure P H becomes lower than the reference hydrogen partial pressure H. In response to this, the control circuit 82 controls the control signal S 13
Is set to a high level for a predetermined period.
駆動装置74は、制御信号S13が高レベルとなったこと
に対応して駆動シャフト75を駆動することにより、炉蓋
移動部材73を矢印Y方向に向けて移動して所定の位置ま
で降下せしめ、かつ矢印X方向に向けて移動して当初の
位置まで上昇せしめる。The drive device 74 drives the drive shaft 75 in response to the high level of the control signal S 13 to move the furnace lid moving member 73 in the arrow Y direction and lower it to a predetermined position. , And move in the direction of the arrow X to raise it to the initial position.
ウェーハ熱処理用治具は、その降下位置におい て、適宜の作業具により炉蓋移動部材73に保持された炉
蓋本体71から降ろされるので、熱処理された半導体ウェ
ーハが、炉芯管本体21の内部空間21Aから取出されたこ
ととなる。The jig for wafer heat treatment should be placed in its lowered position. Then, it is unloaded from the furnace lid main body 71 held by the furnace lid moving member 73 by an appropriate working tool, so that the heat-treated semiconductor wafer is taken out from the internal space 21A of the furnace core tube main body 21.
(変形例) なお、上述では、炉蓋装置70の炉蓋71が炉芯管本体21
の開口端部21Bの端面に直接に当接される場合について
説明したが、本発明は、これに限定されるものではな
く、炉蓋装置の炉蓋が炉芯管本体支持部材の下面にのみ
当接される場合も包摂している。(Modification) In the above description, the furnace lid 71 of the furnace lid device 70 is the furnace core tube main body 21.
Although the case of directly contacting the end surface of the open end 21B of the above has been described, the present invention is not limited to this, and the furnace lid of the furnace lid device is only on the lower surface of the furnace core tube main body supporting member. It is also included when contacted.
(3)発明の効果 上述より明らかなように、本発明にかかる半導体ウェ
ーハの熱処理炉は、加熱部材によって包囲されかつ水素
ガスが熱処理ガスとして供給される炉芯管本体の内部空
間に対し半導体ウェーハをウェーハ熱処理用治具に支持
して収容した状態で炉蓋によって炉芯管本体の開口端部
を閉鎖することにより半導体ウェーハを熱処理してなる
半導体ウェーハの熱処理炉であって、特に、炉芯管本体
から排出された排出ガスの水素分圧と酸素分圧と全ガス
圧とを検知装置で検知しておき、検知装置の検知した水
素分圧と酸素分圧と全ガス圧に応じてそれぞれ制御回路
で第1ないし第3の制御信号を発生し、第1の制御信号
に応じて炉芯管本体の開口端部に配置された炉蓋を駆動
装置で開閉し、第2,第3の制御信制御信号に応じて炉芯
管本体の内部空間に対する供給ガスをガス選択装置で選
択してなるので、 (i)炉芯管本体の内部空間に対し水素ガスが存在して
いる期間内に酸素ガスが誤って侵入することを防止でき
る効果 を有し、また (ii)炉芯管本体に亀裂などの異常が生じた際にも水素
ガスを直ちに排除できる効果 を有し、ひいては (iii)炉芯管本体の内部空間における水素ガスと酸素
ガスとの反応に伴なう爆発事故を防止できる効果 を有する。(3) Effects of the Invention As is clear from the above, the semiconductor wafer heat treatment furnace according to the present invention is a semiconductor wafer with respect to the internal space of the furnace core tube body surrounded by the heating member and supplied with hydrogen gas as the heat treatment gas. Is a heat treatment furnace for semiconductor wafers, in which the semiconductor wafer is heat-treated by closing the open end of the furnace core tube main body with the furnace lid in a state of being supported and accommodated in a wafer heat treatment jig, The hydrogen partial pressure, oxygen partial pressure, and total gas pressure of the exhaust gas discharged from the pipe main body are detected by the detection device, and the hydrogen partial pressure, oxygen partial pressure, and total gas pressure detected by the detection device are respectively detected. The control circuit generates the first to third control signals, and the drive device opens and closes the furnace lid arranged at the open end of the furnace core tube body in response to the first control signal. Control core tube depending on control signal Since the gas to be supplied to the internal space of the body is selected by the gas selection device, (i) Oxygen gas is prevented from accidentally intruding into the internal space of the furnace core tube main body while hydrogen gas is present. It has the effect that (ii) hydrogen gas can be immediately eliminated even when an abnormality such as a crack occurs in the core tube main body, and (iii) hydrogen gas in the internal space of the core tube main body It has the effect of preventing an explosion accident that accompanies the reaction with oxygen gas.
第1図は、本発明にかかる半導体ウェーハの熱処理炉の
一実施例を示す断面図である。10 ……縦型熱処理炉20 ……炉芯管装置 21……炉芯管本体 21A……内部空間 21B……開口端部 22……ガス供給管 23……ガス選択装置 24……ガス排出管 25……支持突部30 ……均熱管40 ……加熱部材50 ……断熱管60 ……ハウジング 61……支持部材本体 62……炉芯管本体支持部材 62a……開口部 63……Oリング 64……ガス捕捉部材 64a……開口部 65……ガス排出管70 ……炉蓋装置 71……炉蓋本体 72……炉蓋保持部材 73……炉蓋移動部材 74……駆動装置 75……駆動シャフト 76……案内シャフト 77……Oリング80 ……制御装置 81……ガス圧検知装置 82……制御回路FIG. 1 is a sectional view showing an embodiment of a heat treatment furnace for semiconductor wafers according to the present invention. 10 …… Vertical heat treatment furnace 20 …… Furnace core tube device 21 …… Furnace core tube main body 21A …… Internal space 21B …… Opening end 22 …… Gas supply pipe 23 …… Gas selection device 24 …… Gas exhaust pipe 25 …… Supporting protrusion 30 …… Soaking tube 40 …… Heating member 50 …… Insulation tube 60 …… Housing 61 …… Supporting member body 62 …… Reactor core tube supporting member 62a …… Opening 63 …… O ring 64 …… Gas trapping member 64a …… Opening 65 …… Gas discharge pipe 70 …… Furnace lid device 71 …… Furnace lid holding member 73 …… Furnace lid moving member 74 …… Driving device 75… … Drive shaft 76 …… Guide shaft 77 …… O-ring 80 …… Control device 81 …… Gas pressure detection device 82 …… Control circuit
Claims (1)
熱処理ガスとして供給される炉芯管本体の内部空間に対
し半導体ウェーハをウェーハ熱処理用治具に支持して収
容した状態で炉蓋によって炉芯管本体の開口端部を閉鎖
することにより半導体ウェーハを熱処理してなる半導体
ウェーハの熱処理炉において、 (a)炉芯管本体から排出された排出ガスの水素分圧と
酸素分圧と全ガス圧とを検知するための検知装置と、 (b)検知装置の検知した水素分圧と酸素分圧と全ガス
圧とに応じてそれぞれ第1ないし第3の制御信号を発生
するための制御回路と、 (c)第1の制御信号に応じて炉芯管本体の開口端部に
配置された炉蓋を開閉するための駆動装置と、 (d)第2,第3の制御信号に応じて炉芯管本体の内部空
間に対する供給ガスを選択するためのガス選択装置と を備えてなることを特徴とする半導体ウェーハの熱処理
炉。1. A furnace core with a furnace lid in a state where a semiconductor wafer is supported and accommodated in a wafer heat treatment jig in an inner space of a furnace core tube body surrounded by a heating member and supplied with hydrogen gas as a heat treatment gas. (A) Hydrogen partial pressure, oxygen partial pressure, and total gas pressure of exhaust gas discharged from the furnace core tube body in a semiconductor wafer heat treatment furnace in which a semiconductor wafer is heat-treated by closing the open end of the tube body. And (b) a control circuit for generating first to third control signals in accordance with the hydrogen partial pressure, the oxygen partial pressure, and the total gas pressure detected by the detection device, respectively. , (C) a drive device for opening and closing the furnace lid arranged at the open end of the furnace core tube body in response to the first control signal, and (d) furnace in response to the second and third control signals. Select the supply gas for the inner space of the core tube body Heat treatment furnace of a semiconductor wafer, comprising by comprising a because of the gas selection device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29207989A JPH0834192B2 (en) | 1989-11-08 | 1989-11-08 | Heat treatment furnace for semiconductor wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29207989A JPH0834192B2 (en) | 1989-11-08 | 1989-11-08 | Heat treatment furnace for semiconductor wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03151633A JPH03151633A (en) | 1991-06-27 |
JPH0834192B2 true JPH0834192B2 (en) | 1996-03-29 |
Family
ID=17777267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29207989A Expired - Fee Related JPH0834192B2 (en) | 1989-11-08 | 1989-11-08 | Heat treatment furnace for semiconductor wafers |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0834192B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3186262B2 (en) * | 1992-10-14 | 2001-07-11 | ソニー株式会社 | Method for manufacturing semiconductor device |
-
1989
- 1989-11-08 JP JP29207989A patent/JPH0834192B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH03151633A (en) | 1991-06-27 |
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