JPH03151631A - Heat-treating furnace for semiconductor wafer - Google Patents

Abstract

PURPOSE:To restrain metal particles from permeating into the internal space of a furnace core tube main body, by cooling a supporting member of the main body of a furnace core tube and a furnace lid made of metal material like stainless steel by using built-in water-cooling circuits. CONSTITUTION:In a heat-treating furnace 10 of a semiconductor wafer, the following are cooled by respective built-in water-cooling circuits 52A, 62A, 64A and 71A; a supporting member 52 for supporting a heat insulation tube main body 51, supporting member main body 61 supporting the supporting member 52, a furnace core tube main body supporting member 62 for supporting a furnace core tube main body 21, a gas capturing member 64 and a furnace lid 71. Hence, when the supporting member 52, the supporting member main body 61, the furnace core tube main body supporting member 62, the gas capturing member 64 and the furnace lid 71 are exposed to a high temperature state, they are prevented from turning to a high temperature state, their oxidation is restrained, and metal particles of iron, chromium, nickel, etc., are prevented from being released from the member material. Thereby the semiconductor wafer can be protected from the contamination caused by the above metal particles when the wafer is heat-treated in the inner space of the furnace core tube main body.

Description

Detailed Description of the Invention (1) Purpose of the Invention [Field of Industrial Application] The present invention relates to a heat treatment furnace for semiconductor wafers, and in particular, to a furnace core tube body support member made of a metal material such as stainless steel. By incorporating a water cooling circuit into the furnace lid for cooling, or by making the furnace core tube body support member and furnace lid from ceramic materials, metal particles can be transferred from the furnace core tube body support member or furnace lid to the furnace core tube body. The present invention relates to a heat treatment furnace for semiconductor wafers that prevents intrusion into the internal space of the semiconductor wafer.

[Prior Art] Conventionally, this type of heat treatment furnace for semiconductor wafers includes, for example, a furnace tube body support member for supporting the furnace tube body and a furnace for closing the opening end face of the furnace tube body. A vertical heat treatment furnace with a lid made of a metal material such as stainless steel has been proposed.

[Problems to be solved] However, in conventional semiconductor wafer heat treatment furnaces,
The furnace core tube body support member and furnace lid, which were made of metal materials such as stainless steel, were exposed to high temperatures.
(IL) There is a drawback that the supporting member of the furnace core tube body and the furnace lid are oxidized, and as a result, metal particles such as iron, chromium or nickel are There is a drawback that the internal space of the furnace core tube body is directly or indirectly penetrated through the furnace core tube body, and as a result (iii) semiconductor wafers are The disadvantage was that it was contaminated by metal particles.

Therefore, in order to eliminate these drawbacks, the present invention has been developed by cooling the furnace core tube body by incorporating a water cooling circuit into the furnace core tube body support member and furnace lid made of metal materials such as stainless steel, or by cooling the furnace core tube body. A heat treatment furnace for semiconductor wafers in which metal particles are prevented from entering the internal space of the furnace tube body from the furnace tube body support member or the furnace lid by making the supporting member and the furnace lid from ceramic materials. We aim to provide the following.

(2) Structure of the Invention [Means for Solving the Problem] The means for solving the problem provided by the present invention is as follows. In a heat treatment furnace for semiconductor wafers, which is supported and housed in a wafer heat treatment jig and is heat-treated by closing the open end of the furnace core tube body with a furnace lid, the support at the open end of the furnace core tube body is 1. A heat treatment furnace for semiconductor wafers, characterized in that a supporting member for a furnace core tube body and a furnace lid for closing an open end of the furnace core tube body each have a built-in water cooling circuit.

Another solution to the problem provided by the present invention is to support the semiconductor wafer on a wafer heat treatment jig with respect to the inner space of the furnace core tube body, which is surrounded by a heating member and supplied with heat treatment gas. Furnace core tube body support for supporting the open end of the furnace core tube body in a heat treatment furnace for semiconductor wafers, which is heated by housing the furnace core tube body and closing the open end of the furnace core tube body with a furnace lid. 1. A heat treatment furnace for semiconductor wafers, characterized in that both the members and the furnace lid for closing the open end of the furnace core tube body are formed of a ceramic material.

[Function] The semiconductor wafer heat treatment furnace according to the present invention has the above-mentioned [
As clearly stated in [Means for Solving Problems], a semiconductor wafer is supported and accommodated in a wafer heat treatment jig in the inner space of the furnace core tube body, which is surrounded by a heating member and supplied with heat treatment gas, and the furnace core tube is A heat treatment furnace for semiconductor wafers which is heat-treated by closing the open end of the main body with a furnace lid, and in particular, a furnace tube body support member and a furnace core for supporting the open end of the furnace tube body. Since each furnace lid, which is used to close the opening end of the tube body, has a built-in water cooling circuit, the furnace core tube body support member and furnace lid made of metal materials such as stainless steel may become hot. In turn, (ii) the furnace core tube main body support member and furnace lid made of metal materials such as stainless steel are inhibited from being oxidized, and (iii) the furnace core tube It acts to prevent metal particles such as iron, chromium or nickel from being released from the main body support member or the furnace lid, in other words fiv) iron to the internal space of the furnace core tube body.

It acts to prevent metal particles such as chromium or nickel from entering, and as a result, prevents semiconductor wafers from being contaminated by these metal particles during heat treatment in the internal space of the fVl furnace core tube body. acts to prevent

In addition, as specified in the above-mentioned [Means for solving problems], the other heat treatment furnace for semiconductor wafers according to the present invention has an inner space of the furnace core tube body surrounded by the heating member and supplied with the heat treatment gas. A heat treatment furnace for semiconductor wafers, in which a semiconductor wafer is supported and housed in a wafer heat treatment jig and heat-treated by closing the open end of a furnace core tube body with a furnace lid, in particular, a furnace core tube body. Since both the furnace core tube body support member for supporting the open end of the furnace core tube body and the furnace cover for closing the open end of the furnace core tube body are formed of ceramic materials, the fi
It has the effect of ii to fVl.

[Example] Next, the heat treatment furnace for semiconductor wafers according to the present invention will be specifically explained by giving preferred examples thereof and referring to the accompanying drawings. However, the examples described below are described to facilitate or accelerate understanding of the present invention, and are not described to limit the present invention. In other words, each member disclosed in the embodiments described below includes all design changes and equivalent substitutions that fall within the spirit and technical scope of the present invention.

FIG. 1 is a sectional view showing one embodiment of a semiconductor wafer heat treatment furnace according to the present invention, and in particular, a vertical heat treatment furnace l.
O is illustrated, and shows a state in which the furnace lid main body 71 is spaced apart from the open end 21B of the furnace core tube main body 21.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the configuration of an embodiment of a semiconductor wafer heat treatment furnace according to the present invention will be described in detail with reference to FIG. In FIG. 1, a vertical heat treatment furnace is illustrated as a heat treatment furnace for semiconductor wafers according to the present invention in order to simplify the following explanation, but there is no intention to limit the present invention to this.

Reference numeral 10 denotes a vertical heat treatment furnace for semiconductor wafers according to the present invention, which includes a furnace core tube device 20 for heat-treating semiconductor wafers, and a furnace core tube device 20 arranged around the furnace core tube device at an appropriate interval as desired. A heat soaking tube is provided to easily secure a heat soaking area in the furnace core tube device 20, and a heat soaking tube is provided around the heat soaking tube and is heated using electric power supplied from an external power source. a heating member 40 for heating the furnace core tube device through the heating member 40; and an insulating pipe disposed around the heating member 40 to prevent the heat generated by the heating member 40 from escaping to the outside environment. In addition, a housing 60 made of a suitable metal material such as stainless steel is used to hold the furnace core tube device or heat insulating tube 50, and the opening of the furnace core tube device 20 is closed to expose the internal space 21A to the outside. It is equipped with a furnace cover device 70 for isolation from the environment.

The furnace core tube device is made of a suitable high-purity material such as quartz that can be used at high temperatures, and includes a furnace core tube body 21 for heat-treating semiconductor wafers in a soaking area formed in an internal space 21A, and a heat-insulating Extended from the outside of the tube 4 to the outer peripheral surface of the furnace core tube main body 21, and then extended along the outer peripheral surface to the top, and opened to the internal space 21A at the top, and a suitable heat treatment gas (for example, hydrogen gas), A gas supply pipe 22 for supplying scavenging gas (for example, nitrogen gas) or cleaning gas (for example, hydrogen chloride gas) as a supply gas, and a gas supply pipe 22 for supplying scavenging gas (for example, nitrogen gas) or cleaning gas (for example, hydrogen chloride gas), and a heat insulating pipe 50 that is opened near the open end 21B of the furnace core tube body 21. It includes a gas exhaust pipe 23 that extends to the outside and discharges used heat treatment gas, scavenging gas, or cleaning gas from the internal space 21A of the furnace core tube body 21 to the outside as exhaust gas. . Gas supply pipe 22
It is preferable that the portions of the gas exhaust pipe 23 located near the furnace core tube body 21 be made of a material that can be used at high temperatures, such as quartz, as much as possible.

The soaking tube 30 is made of a suitable material that can be used at high temperatures, such as silicon carbide, and is arranged to surround the entire length of the furnace core tube device in order to secure or expand the heating region of the furnace core tube device. It is set up.

The heating part material is disposed outside of the soaking tube, and is appropriately arranged in the internal space 21A of the furnace core tube device 20 in order to form and secure a heat soaking area along the axial direction. There is.

The insulation pipe is the furnace core tube device, the soaking tube concave and the heating member 4.
A heat-insulating tube body 51 that surrounds the entire tube 0 and is made of a suitable heat-insulating material such as glass fiber, supports the lower ends of both the heat-insulating tube body 51 and the heat equalizing tube on the upper surface, and has a built-in water cooling circuit 52A. It includes a support member 52. The support member 52 may be removed if desired, but for convenience of explanation, it is assumed that it is not removed here.

The housing 60 has a water cooling circuit 61 connected to a suitable cooling water source (not shown) and the water cooling circuit 52A (not connected to the water cooling circuit 52A when the support member 52 is removed).
A built-in support member 52 (support member 5) of the insulated pipe
2 is removed, the support member body 61 supports the heat insulating tube body 51 and the lower end of the soaking tube (the lower end of both) on the upper surface, and has the furnace core tube body 21 and the gas supply tube 22 inserted through the central opening 61B. and a water cooling circuit 62 attached to the lower surface of the support member main body 61 and communicating with the water cooling circuit 61A.
Furnace tube main body support member 62 for supporting the lower end surface of the opening end 21B of the furnace tube main body 21 by the stepped upper surface of the central opening 62B, and the upper surface of the stepped portion of the central opening 62B. An O-ring 63 is housed in a groove formed in the groove to ensure a seal with the lower end surface of the open end 21B of the furnace core tube body 21, and a furnace core tube body support member 62. The heat treatment gas leaked from the open end 21B of the furnace core tube 1
A gas capture member 64 for capturing scavenging gas or cleaning gas; and a gas capture member 64 having one end opened on the side surface of the gas capture member 64 for discharging leaked gas captured by the gas capture member 64 to the outside. A discharge pipe 65 is provided. The gas trapping member 64 and the gas exhaust pipe 65 may be removed if desired, but for convenience of explanation, they are not removed here.

The furnace lid device 70 has a built-in water cooling circuit 71A connected to an appropriate cooling water source (not shown), and has an O-ring 7 to ensure a seal against the lower surface of the furnace tube body support member 62.
The furnace lid 71 is made of a suitable metal material such as stainless steel, and is held in place for the purpose of opening and closing the open end 21B of the furnace core tube body 21. A furnace lid moving member 72 for moving toward and away from the tube body support member 62, and a drive shaft 73 disposed at one end of the furnace lid moving member 72 for moving the furnace lid moving member 72 up and down. Similarly to the drive shaft 73, the furnace lid moving member 272 is disposed at one end of the furnace lid moving member 272.
A guide shaft 74 is provided for stabilizing the vertical movement of the shaft. It is preferable that an elastic member (not shown) is built into the furnace lid moving member 72 so that the furnace lid 71 can suitably abut against the furnace core tube body support member 62.

Furthermore, the operation of an embodiment of the semiconductor wafer heat treatment furnace according to the present invention will be described in detail with reference to the vertical heat treatment furnace illustrated in FIG.

Before starting a series of operations related to heat treatment of semiconductor wafers in the internal space 21A of the furnace core tube main body 21, first, the gas supply pipe 22 is moved in the direction indicated by the arrow A.

As shown, an inert gas (for example, nitrogen gas) is supplied to the internal space 21A of the furnace core tube body 21.

As a result, gas (for example, hydrogen chloride gas; referred to as residual gas) remaining in the internal space 21A of the furnace core tube body 21 is removed.
After being moved together with the inert gas as shown by arrow A2, it is discharged to the outside of the furnace core tube body 21 via the gas discharge pipe 23 as shown by arrow A3.

At a time when the scavenging of residual gas by the inert gas has sufficiently progressed, the furnace cover moving member 72 moves the drive shaft 73
The guide shaft 74 causes the guide shaft 74 to move in the direction of the arrow X. When the furnace lid moving member 72 is lowered to a predetermined position, a wafer heat treatment jig (not shown) holding a semiconductor wafer to be heat treated is placed on the upper surface of the furnace lid 71 by an appropriate work tool. Ru.

Thereafter, the furnace lid moving member 72 is moved in the direction of arrow Y by the drive shaft 73 and the guide shaft 74.

When the furnace lid moving member 72 is moved in the direction of arrow Y,
A jig for wafer heat treatment is installed in the internal space 21 of the furnace core tube body 21.
After that, the furnace M71 is brought into contact with the lower surface of the furnace core tube body support member 62 via the O-ring 71B.

As described above, the semiconductor wafer to be heat treated held in the wafer heat treatment jig is transferred to the inner space 2 of the furnace core tube body 21.
Inserted for 1A.

Even after the semiconductor wafer to be heat-treated is inserted into the internal space 21A of the heat treatment operation furnace core tube body 21, in order to scavenge oxygen gas that has entered as the semiconductor wafer is shortened or enlarged,
Inert gas (for example, nitrogen gas) continues to be supplied by the gas supply pipe 22 as indicated by arrow A. In the internal space 21A of the furnace core tube body 21, the oxygen gas is moved together with the inert gas in the direction of arrow A2 (after being moved through the gas discharge pipe 23 to the furnace core tube body 21 as indicated by arrow A).
is discharged to the outside.

At a time when the oxygen gas has been sufficiently scavenged, the supply of inert gas is stopped, and then the heat treatment gas (for example, hydrogen gas) is supplied to the inside of the furnace core tube body 21 through the gas supply pipe 22 as shown by arrow A1. Supply starts to the space 21A. The heat treatment gas is supplied to the inner space 21A of the furnace core tube body 21.
After the gas is moved as shown by arrow A2, it is discharged as shown by arrow A3 (gas exhaust 5 is discharged through the outlet pipe 23, but at this time, it comes into contact with the semiconductor wafer held in the wafer heat treatment jig and the gas is discharged as shown by arrow A3). Subjected to heat treatment.

When the heat treatment operation for semiconductor wafers is completed, the supply of heat treatment gas is stopped, and then an inert gas (for example, nitrogen gas) is supplied through the gas supply pipe 22 to scavenge the remaining heat treatment gas. As shown in A, the furnace core tube body 21
begins to be supplied to the internal space 21A. In the internal space 21A of the furnace core tube body 21, the heat treatment gas is moved together with the inert gas as shown by arrow A2, and the gas discharge tube 23
is discharged to the outside of the furnace core tube body 21 as shown by arrow A3.

The furnace cover moving member 72 is moved in the direction of the arrow X by the drive shaft 73 and the guide shaft 74 while supplying the inert gas at a time when the heat treatment gas has been sufficiently scavenged by the inert gas. Furnace cover moving member 7
2 is lowered to a predetermined position, the wafer heat treatment jig 6 holding the heat-treated semiconductor wafer is moved to the furnace cover 7 using an appropriate tool.
removed from 1.

Furthermore, if you wish to continue the heat treatment operation on semiconductor wafers,
Another wafer heat treatment jig that holds a semiconductor wafer to be heat treated is placed on the furnace cover 71 in the same manner as described above, and then the short-length operation is performed. In addition, when the heat treatment operation of semiconductor wafers is not continued, the furnace cover moving member 72 moves the drive shaft 7 in order to protect the internal space 21A of the furnace core tube body 21.
3 and the guide shaft 74 in the direction of arrow Y, and the furnace M71 is brought into contact with the lower surface of the furnace core tube body support member 62.

During the gas flow, the furnace main operation, the heat treatment operation, or the furnace discharge operation, the open end 21B of the furnace core tube body 21 and the furnace core tube body support member 62
If the heat treatment gas or cleaning gas leaks from the sealing point by the O-ring 63 between the furnace core tube body supporting member 62 and the furnace ti71, or from the sealing point by the O-ring 71B between the bottom surface of the furnace tube main body support member 62 and the furnace ti71, the leaked gas will be The member 64 prevents the gas from diffusing, and the gas exhaust pipe 65 exhausts it to the outside as shown by arrow B.

The water cooling circuit 61A built in the support member main body 61 of the wooden housing 60 guides the cooling water supplied from the cooling water source as shown by the arrow C1 from one side of the central opening 61B to the other side. , and is discharged from the other side of the central opening 61B as shown by arrow C2.

Cooling water supplied by the water cooling circuit 61A as shown by arrow C1 is branched to a water cooling circuit 52A built in a support member 52 similar to an insulated pipe, guided as shown by arrow C3, and then joins the water cooling circuit 61A again. and is discharged as shown by arrow C2.

The cooling water supplied by the water cooling circuit 61A as shown by arrow C1 is branched to a water cooling circuit 62A built in the furnace core tube main body support member 62, which is similar to the housing, and guided as shown by arrow C4, and then returned to the water cooling circuit. 61A and is discharged as shown by arrow C2.

Cooling water supplied by the water cooling circuit 61A as shown by arrow C3 is branched to a water cooling circuit 64A built in a gas capture member 64 similar to the housing, guided as shown by arrow C5, and then joins the water cooling circuit 61A again. and is discharged as shown by arrow C2.

The water cooling circuit 71A built into the furnace lid 71, which is similar to a furnace lid device, is
Cooling water supplied from a cooling water source as shown by arrow C6 is guided along the groove in which O-ring 71B is provided, and then is discharged as shown by arrow C1.

As described above, in the semiconductor wafer heat treatment furnace (1) according to the present invention, the support member 52 for supporting the heat insulating tube body 51 is
．． A support member body 61 for supporting the support member 52. Furnace core tube body support member 62 for supporting the furnace core tube body 21
．． Gas capture member 64 and furnace lid 71 are cooled by built-in water cooling circuits 52A, 62A, 64A, and 71A, respectively.

For this reason, the semiconductor wafer heat treatment furnace I according to the present invention
According to O, the support member 52. Support member main body 61, furnace core tube main body support member 62. When the gas trapping members 64 and 9 and the furnace lid 71 are exposed to high temperature conditions, it is possible to prevent them from reaching high temperatures, which in turn suppresses oxidation of these members, and removes iron, chromium or It can prevent metal particles such as nickel from being released.

In other words, according to the heat treatment furnace for semiconductor wafers according to the present invention, metal particles such as iron, chromium, or nickel can be prevented from entering the internal space 21A of the furnace core tube body 21, and as a result, In particular, it is possible to prevent the semiconductor wafer from being contaminated by these metal particles during heat treatment in the internal space 21A of the furnace core tube body 21.

Yu! In addition, in the above description, the support member main body 6 is similar to a housing.
1. Furnace core tube body support member 62. A water cooling circuit 61A for the gas capture member 64 and the furnace lid 71 for the furnace lid device, etc.
62A, 64A, and 71A are built in, but the present invention is not limited thereto.

That is, the present invention makes the support member body of the housing, the furnace core tube body support member, the gas trapping member, and the furnace lid of the furnace lid device (particularly the furnace core tube body support member and the furnace lid) from ceramic materials. By this,
This prevents metal particles such as iron, chromium, or nickel from being released from the furnace core tube body support member and the furnace lid. To prevent metal particles such as chromium or nickel from entering, and as a result, to prevent semiconductor wafers from being contaminated by these metal particles during heat treatment in the internal space of the furnace core tube body. , inclusive.

(3) Effects of the invention As is clear from the above description, the semiconductor wafer heat treatment furnace according to the second invention is a furnace surrounded by a heating member and supplied with heat treatment gas, as specified in the above-mentioned [Means for solving problems]. A heat treatment furnace for semiconductor wafers, in which semiconductor wafers are housed in the internal space of a core tube body while being supported by a wafer heat treatment jig, and the open end of the core tube body is closed with a furnace lid for heat treatment. In particular, the furnace core tube body support member for supporting the open end of the furnace core tube body and the furnace cover for closing the open end of the furnace core tube body each have a built-in water cooling circuit. (1) It has the effect of preventing the furnace core tube main body support member and furnace lid made of metal materials such as stainless steel from becoming high temperature, and (11) It has the effect of suppressing the oxidation of the furnace core tube body support member and the furnace lid, thereby preventing metal particles such as iron, chromium, or nickel from being released from the furnace core tube body support member or the furnace lid. In other words, (IVL) has the effect of preventing iron from forming in the internal space of the furnace core tube body.

It has the effect of preventing metal particles such as chromium or nickel from entering, and as a result, semiconductor wafers are contaminated by these metal particles during heat treatment in the internal space of the fVl furnace core tube body. It has the effect of preventing

In addition, in the heat treatment furnace for semiconductor wafers according to the present invention, as specified in the above-mentioned section ``Means for solving problem E'', the semiconductor wafer is A heat treatment furnace for semiconductor wafers, in which the semiconductor wafers are heat-treated by being supported and housed in a wafer heat treatment jig and by closing the opening end of the furnace core tube body with a furnace lid, in particular, the opening end of the furnace core tube body is closed. Since both the furnace core tube body supporting member for supporting the end portion and the furnace cover for closing the open end of the furnace core tube body are formed of ceramic materials, the effects of have

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing an embodiment of a semiconductor wafer heat treatment furnace according to the present invention. 21・・・・・・21A・・・21B・2 23・・40・・・0 51・・・52・・・52A・60・・・・・ １ ・Vertical heat treatment furnace・Furnace core tube device・Furnace core tube body・・Inner space・Open end・・Gas supply pipe Gas discharge pipe・Soaking tube heating Members: Insulated tube, Insulated tube body support member, Water cooling circuit, Housing, Support member, Main body water cooling circuit center opening, Furnace core tube body support member, Water cooling circuit, Central opening...O-ring...Gas capture member...Water cooling circuit...Gas exhaust pipe Furnace lid equipment Furnace lid water cooling circuit O-ring... Furnace cover moving member...Drive shaft...Guide shaft 61A...61B...62...62A...62A...・・・ 2B 63・・・・・・ 64・・・・・・ 64A ・・・ 65・・・・・・ 70・・・・・・・ ・ 71・・・・・・・・・・・・・・・ 71A ・・・・・・ 71B ・・・・・・・・・ 72・・・・・・・・・ 73・・・・・・・・・ 74・・・・・・...

Claims (2)

[Claims] (1) A semiconductor wafer is supported and housed in a wafer heat treatment jig in the internal space of the furnace core tube body surrounded by the heating member and supplied with heat treatment gas, and the open end of the furnace core tube body is connected to the furnace lid. In a heat treatment furnace for semiconductor wafers which is heat-treated by closing the furnace, a furnace tube body support member for supporting the open end of the furnace tube body and a furnace for closing the open end of the furnace tube body are provided. A semiconductor wafer heat treatment furnace characterized in that each lid has a built-in water cooling circuit. (2) A semiconductor wafer is supported and housed in a wafer heat treatment jig in the internal space of the furnace core tube body surrounded by the heating member and supplied with heat treatment gas, and the open end of the furnace core tube body is connected to the furnace lid. In a heat treatment furnace for semiconductor wafers which is heat-treated by closing the furnace, a furnace tube body support member for supporting the open end of the furnace tube body and a furnace for closing the open end of the furnace tube body are provided. A heat treatment furnace for semiconductor wafers, characterized in that both lids are made of a ceramic material.