JPH08335710A - Semiconductor light receiving element and photointerrupter using the light receiving element - Google Patents
Semiconductor light receiving element and photointerrupter using the light receiving elementInfo
- Publication number
- JPH08335710A JPH08335710A JP13965795A JP13965795A JPH08335710A JP H08335710 A JPH08335710 A JP H08335710A JP 13965795 A JP13965795 A JP 13965795A JP 13965795 A JP13965795 A JP 13965795A JP H08335710 A JPH08335710 A JP H08335710A
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving element
- semiconductor chip
- light receiving
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体受光素子に関す
る。さらに詳しくは、ホトインタラプタなどに用いられ
るのに適したスリット状透光領域を介して受光する受光
素子であって、同じチップサイズで受光感度を向上させ
た受光素子およびそれを用いたホトインタラプタに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light receiving element. More specifically, the present invention relates to a light-receiving element that receives light through a slit-shaped light-transmitting region suitable for use in a photointerrupter or the like, and has the same chip size and improved light-receiving sensitivity, and a photointerrupter using the same. .
【０００２】[0002]
【従来の技術】ホトインタラプタは発光素子と受光素子
とが対向配置されたもので、そのあいだを被検出物が通
過することにより発光素子の光が受光されたり遮断さ
れ、それにより被検出物の位置検出やパソコンのマウス
などの位置検出などに用いられる。このようなホトイン
タラプタの一例を図４に断面説明図で示す。2. Description of the Related Art In a photo interrupter, a light emitting element and a light receiving element are arranged so as to face each other, and the light of the light emitting element is received or blocked when the object to be detected passes therethrough, whereby the object to be detected is blocked. It is used for position detection and position detection of the mouse of a personal computer. An example of such a photo interrupter is shown in a sectional explanatory view in FIG.
【０００３】図４において、１はたとえばＬＥＤなどか
らなる発光素子、２はホトダイオードまたはホトトラン
ジスタなどからなる半導体受光素子、３は発光素子１お
よび受光素子２をそれぞれ覆い発光素子１以外の外光が
直接受光素子２に入らないようにする発光素子１の光に
対して不透明な樹脂などからなる支持枠である。不透明
な樹脂などからなる支持枠３は発光素子１と受光素子２
の対向部に切欠部３１を有し、該切欠部３１を介して発
光素子１の光が受光素子２により受光されるように発光
素子１および受光素子２の前面の支持枠３にはそれぞれ
開口部３２、３３が設けられている。受光素子２の前面
の開口部３３は、分解能をあげるため、図４（ｂ）に示
されるように、発光素子１に対面してスリット形状で設
けられるばあいが多い。なお、図４において、１１、２
１はそれぞれ発光素子１および受光素子２のリードであ
る。In FIG. 4, reference numeral 1 is a light emitting element such as an LED, 2 is a semiconductor light receiving element such as a photodiode or phototransistor, and 3 is a light receiving element that covers the light emitting element 1 and the light receiving element 2, respectively, and receives outside light other than the light emitting element 1. The support frame is made of a resin or the like that is opaque to the light of the light emitting element 1 so as not to directly enter the light receiving element 2. The support frame 3 made of an opaque resin or the like has a light emitting element 1 and a light receiving element 2.
Has a notch 31 in a facing portion thereof, and the support frame 3 in front of the light emitting element 1 and the light receiving element 2 is opened so that the light of the light emitting element 1 is received by the light receiving element 2 through the notch 31. Parts 32, 33 are provided. In order to improve the resolution, the opening 33 on the front surface of the light receiving element 2 is often provided in a slit shape so as to face the light emitting element 1 as shown in FIG. 4B. In addition, in FIG.
Reference numerals 1 are leads of the light emitting element 1 and the light receiving element 2, respectively.
【０００４】一方、受光素子２は通常図５（ａ）に示さ
れるように、リードフレーム２５のダイパッド２６上に
ホトダイオードまたはホトトランジスタなどの四角形状
の半導体チップ２３がダイボンディングされ、金線２４
などによりリード２１とワイヤボンディングされ、図５
（ｂ）に示されるように、受光する光に対して透明なエ
ポキシ樹脂２７などにより半導体チップ２３およびワイ
ヤボンディング部を覆うように被覆されている。On the other hand, in the light receiving element 2, a square semiconductor chip 23 such as a photodiode or a phototransistor is die-bonded onto a die pad 26 of a lead frame 25 as shown in FIG.
Wire-bonding to the lead 21 by, for example, FIG.
As shown in (b), the semiconductor chip 23 and the wire bonding portion are covered with an epoxy resin 27 that is transparent to the received light.
【０００５】また、ホトインタラプタを用いて、モータ
の回転数やマウスの位置などを検出するばあいにはホト
インタラプタの発光素子と受光素子の対向部に図６に示
されるようなスリット４１が一定間隔で設けられた円板
状の遮光板４を回転させることにより回転数や位置の検
出を行っている。When a photo interrupter is used to detect the number of rotations of a motor or the position of a mouse, a slit 41 as shown in FIG. 6 is provided at a portion where a light emitting element and a light receiving element of the photo interrupter face each other. The number of rotations and the position are detected by rotating the disc-shaped light-shielding plates 4 provided at intervals.
【０００６】[0006]
【発明が解決しようとする課題】前述のように、特定の
発光素子からの光のみを受光する受光素子は、他の外乱
光の入射を避けるため、前面のスリット状開口部を通し
て受光する構造になっている。このスリット状開口部は
製作上の便宜などの理由により図４〜５に示されるよう
に、受光素子２のリード２１、２２の方向またはそれら
と直角方向になるように形成される。一方、受光素子２
は図５に示されるように、四角形状（通常は正方形）に
形成された半導体チップ２３の一辺がリード２１、２２
の延びる方向と平行になるように、半導体チップ２３は
ダイパッド２６上にボンディングされる。そのため、ス
リット状開口部を通して入射する光の受光は半導体チッ
プ２３のスリット状開口部３３の幅の面積部分だけで、
受光感度を向上させるためには発光素子１の発光出力を
大きくするか、受光素子２のチップ面積を大きくする
か、またはスリット形状と同様の細長い形状の半導体チ
ップにする必要がある。しかし発光素子の出力を大きく
すると消費電力が大きくなるし、受光素子の面積を大き
くすると１枚のウエハからの半導体チップの取り分が少
なくなり、また細長いチップを形成すると受光素子の受
光効率が向上して好ましいが、そのためにわざわざマス
クを形成しなければならず、汎用の半導体チップを使用
することができなく、いずれもコストアップの要因とな
る。As described above, the light receiving element that receives only light from a specific light emitting element has a structure in which light is received through a slit-shaped opening on the front surface in order to avoid incidence of other ambient light. Has become. As shown in FIGS. 4 to 5, the slit-shaped opening is formed in the direction of the leads 21 and 22 of the light receiving element 2 or in the direction perpendicular to them, as shown in FIGS. On the other hand, the light receiving element 2
As shown in FIG. 5, one side of the semiconductor chip 23 formed in a square shape (usually a square shape) has leads 21 and 22.
The semiconductor chip 23 is bonded onto the die pad 26 so as to be parallel to the extending direction of the semiconductor chip 23. Therefore, the light received through the slit-shaped opening is received only by the area of the width of the slit-shaped opening 33 of the semiconductor chip 23.
In order to improve the light receiving sensitivity, it is necessary to increase the light emission output of the light emitting element 1, increase the chip area of the light receiving element 2, or form a semiconductor chip having an elongated shape similar to the slit shape. However, increasing the output of the light emitting element increases power consumption, increasing the area of the light receiving element reduces the amount of semiconductor chips taken from one wafer, and forming elongated chips improves the light receiving efficiency of the light receiving element. However, it is necessary to form a mask for that purpose, and a general-purpose semiconductor chip cannot be used, which causes a cost increase.
【０００７】本発明のこのような問題を解決し、半導体
受光素子のチップ面積を大きくしないで、従来の汎用の
受光用半導体チップを使用しながらスリット状の開口部
から受光する受光素子の受光効率を向上することを目的
とする。The light receiving efficiency of the light receiving element which solves the problems of the present invention and does not increase the chip area of the semiconductor light receiving element and receives light from the slit-shaped opening while using the conventional general-purpose light receiving semiconductor chip. The purpose is to improve.
【０００８】本発明の他の目的は受光素子をコストアッ
プすることなく検知感度の向上したホトインタラプタを
提供することにある。Another object of the present invention is to provide a photo interrupter with improved detection sensitivity without increasing the cost of the light receiving element.
【０００９】[0009]
【課題を解決するための手段】本発明の請求項１記載の
半導体受光素子は、リード部およびダイパッド部を有す
るリードフレームの該ダイパッド上に四角形状の受光用
半導体チップがボンディングされ、前記リード部とワイ
ヤボンディングがなされ、前記半導体チップが受光する
光に対し透明な樹脂により被覆された半導体受光素子で
あって、前記半導体チップの一辺が前記リード部の延出
方向に対して斜めになるように前記半導体チップが設け
られている。According to a first aspect of the present invention, there is provided a semiconductor light receiving element in which a rectangular light-receiving semiconductor chip is bonded on a die pad of a lead frame having a lead portion and a die pad portion. A semiconductor light receiving element, which is wire-bonded with the semiconductor chip and is covered with a resin transparent to the light received by the semiconductor chip, wherein one side of the semiconductor chip is oblique to the extending direction of the lead portion. The semiconductor chip is provided.
【００１０】請求項２記載の半導体受光素子は、四角形
状の受光用半導体チップの各電極がリード部とそれぞれ
ワイヤボンディングされ、該半導体チップおよびワイヤ
ボンディング部が前記半導体チップの正面のスリット状
透光部を除き前記受光する光に対し不透明な材料により
被覆された半導体受光素子であって、前記半導体チップ
の一辺が前記スリット状透光部のスリット方向と斜めに
なるように前記半導体チップが設けられている。According to another aspect of the semiconductor light receiving element of the present invention, each electrode of the rectangular light-receiving semiconductor chip is wire-bonded to a lead portion, and the semiconductor chip and the wire-bonding portion are slit-shaped light-transmitting light in front of the semiconductor chip. A semiconductor light-receiving element coated with a material opaque to the received light except for a portion, wherein the semiconductor chip is provided such that one side of the semiconductor chip is oblique to the slit direction of the slit-shaped light-transmitting portion. ing.
【００１１】請求項３記載のホトインタラプタは、発光
素子と該発光素子の光を受光する四角形状の半導体チッ
プからなる受光素子とが一定間隔をおいて対向配置さ
れ、前記発光素子からの光が前記発光素子に到達する一
部透光領域を除いて前記発光素子の光に対して不透明な
材料により前記発光素子および受光素子がそれぞれ被覆
されてなるホトインタラプタであって、前記受光素子の
前に形成された透光領域がスリット状に形成され、該ス
リットの方向と前記受光素子の半導体チップの一辺とが
斜めになるように前記受光素子が設けられている。In a photo interrupter according to a third aspect of the present invention, a light emitting element and a light receiving element formed of a rectangular semiconductor chip for receiving the light of the light emitting element are arranged to face each other at a constant interval, and the light from the light emitting element is A photointerrupter in which the light-emitting element and the light-receiving element are respectively covered with a material opaque to the light of the light-emitting element except for a part of the light-transmitting region reaching the light-emitting element, the photointerrupter being in front of the light-receiving element The formed light transmitting region is formed in a slit shape, and the light receiving element is provided so that the direction of the slit and one side of the semiconductor chip of the light receiving element are oblique.
【００１２】請求項４記載のホトインタラプタは、発光
素子と該発光素子の光を受光する四角形状の半導体チッ
プからなる受光素子とが一定間隔をおいて対向配置さ
れ、前記発光素子からの光が前記受光素子に到達する一
部透光領域を除いて前記発光素子の光に対して不透明な
材料により前記発光素子および受光素子がそれぞれ被覆
されてなるホトインタラプタであって、スリットが規則
的に設けられた回転可能な遮光板が前記発光素子と受光
素子の対向部に間挿して設けられ、該受光素子の前面の
前記遮光板のスリットの方向と前記発光素子の半導体チ
ップの一辺とが斜めになるように前記受光素子が設けら
れている。In a photo interrupter according to a fourth aspect of the present invention, a light emitting element and a light receiving element composed of a quadrangular semiconductor chip for receiving the light of the light emitting element are arranged to face each other at a constant interval, and the light from the light emitting element is A photo interrupter in which the light emitting element and the light receiving element are covered with a material that is opaque to the light of the light emitting element except for a part of the light transmitting area reaching the light receiving element, and slits are regularly provided. The rotatable light shield plate is provided so as to be interposed between the light emitting element and the light receiving element, and the direction of the slit of the light shield plate on the front surface of the light receiving element and one side of the semiconductor chip of the light emitting element are inclined. The light receiving element is provided so that
【００１３】[0013]
【作用】請求項１記載の半導体受光素子によれば、リー
ドフレームのリードの延びる方向と受光用半導体チップ
の一辺とが斜めになるように設けられているため、発光
素子と受光素子とを対向配置させて、たとえばホトイン
タラプタを構成するばあいには、発光素子と受光素子を
保持する不透光性材料からなる支持枠に設けられる光透
過領域のスリットの方向と半導体チップの一辺とが斜め
になるように組立てられる。すなわち、一般にホトイン
タラプタの支持枠は発光素子や受光素子のリードの延び
る方向に対して垂直面を基準面として形成され、しかも
製作上の容易さからスリット状開口部の長辺または短辺
はその基準面と平行な方向に形成されるからである。そ
のため、本発明の受光素子を用いることにより、ホトイ
ンタラプタの発光素子から受光素子への光の光路におい
て、スリットの向きと半導体チップの一辺の方向は斜め
方向となり、スリットを通過する光が当る部分の半導体
チップの面積が大きくなる。その結果、半導体チップそ
のものは従来の汎用の半導体チップと同じ大きさでも受
光効率が向上し、検知感度が向上する。According to the semiconductor light-receiving element of the present invention, the light-emitting element and the light-receiving element are opposed to each other because the lead-extending direction of the lead frame and one side of the light-receiving semiconductor chip are provided obliquely. In the case of arranging them to form, for example, a photointerrupter, the direction of the slit of the light transmission region provided in the support frame made of an opaque material holding the light emitting element and the light receiving element and one side of the semiconductor chip are oblique. It is assembled to become. That is, generally, the support frame of the photointerrupter is formed with a vertical surface as a reference surface with respect to the extending direction of the leads of the light emitting element or the light receiving element, and the long side or the short side of the slit-shaped opening is the same as the reference surface because of ease of manufacturing. This is because they are formed in the direction parallel to the reference plane. Therefore, by using the light receiving element of the present invention, in the optical path of the light from the light emitting element of the photointerrupter to the light receiving element, the direction of the slit and the direction of one side of the semiconductor chip are oblique, and the portion where the light passing through the slit hits The area of the semiconductor chip is increased. As a result, even if the semiconductor chip itself has the same size as a conventional general-purpose semiconductor chip, the light receiving efficiency is improved and the detection sensitivity is improved.
【００１４】請求項２記載の半導体受光素子によって
も、受光素子前面の透光領域であるスリットの方向と半
導体チップの一辺とが斜めに形成されているため、スリ
ット状開口部を透過した光の受光面積が大きくなり、検
知感度が向上する。Also according to the semiconductor light receiving element of the second aspect, since the direction of the slit, which is the light transmitting region on the front surface of the light receiving element, and one side of the semiconductor chip are formed obliquely, the light transmitted through the slit-shaped opening is The light receiving area is increased and the detection sensitivity is improved.
【００１５】また請求項３記載のホトインタラプタによ
れば、発光素子の光が受光素子の前面に設けられたスリ
ット状開口部を経て受光素子に到達するが、スリットの
方向と受光素子の半導体チップとが斜めになっているた
め、従来と同じ大きさの半導体チップを使用しても受光
感度が大幅に向上する。According to the photointerrupter of the third aspect, the light of the light emitting element reaches the light receiving element through the slit-shaped opening provided on the front surface of the light receiving element, but the direction of the slit and the semiconductor chip of the light receiving element. Since and are inclined, the light receiving sensitivity is significantly improved even if a semiconductor chip of the same size as the conventional one is used.
【００１６】発光素子と受光素子とのあいだに挿入され
る遮光板のスリットの方向と受光素子の半導体チップの
一辺とが斜めになるばあいも同様に受光感度が大幅に向
上する。Similarly, when the direction of the slit of the light shielding plate inserted between the light emitting element and the light receiving element and one side of the semiconductor chip of the light receiving element are inclined, the light receiving sensitivity is also greatly improved.
【００１７】[0017]
【実施例】つぎに図面を参照しながら本発明の半導体受
光素子およびホトインタラプタについて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a semiconductor light receiving element and a photo interrupter of the present invention will be described with reference to the drawings.
【００１８】図１は本発明の半導体受光素子の一実施例
を説明する図、図２は本発明のホトインタラプタの一実
施例の２次モールドタイプの受光素子部の斜視説明図、
図３は本発明のホトインタラプタの他の実施例であるケ
ースタイプの断面説明図である。FIG. 1 is a diagram for explaining an embodiment of a semiconductor light receiving element of the present invention, and FIG. 2 is a perspective view of a secondary mold type light receiving element portion of an embodiment of a photo interrupter of the present invention.
FIG. 3 is a cross-sectional explanatory view of a case type which is another embodiment of the photo interrupter of the present invention.
【００１９】本発明の半導体受光素子は、たとえば図１
に示されるように、スリット状の開口部２８を除いて不
透光性材料２９により少なくとも周囲が被覆されてお
り、表面での開口部２８の延びる方向であるスリット方
向と受光用半導体チップ２３の対角線方向とが一致する
ような関係に開口部２８と半導体チップ２３とが設けら
れていることに特徴がある。図１に示される実施例にお
いては、リードフレームのリード２１、２２の延びる方
向に対して半導体チップ２３が斜め、さらに好ましくは
リード２１、２２の延びる方向と半導体チップ２３の対
角線の方向とが一致するように組立てられている。The semiconductor light receiving element of the present invention is shown in FIG.
As shown in FIG. 5, at least the periphery is covered with the non-translucent material 29 except for the slit-shaped opening 28, and the slit direction in which the opening 28 extends on the surface and the light receiving semiconductor chip 23. It is characterized in that the opening 28 and the semiconductor chip 23 are provided in such a relationship that their diagonal directions coincide with each other. In the embodiment shown in FIG. 1, the semiconductor chip 23 is oblique with respect to the extending direction of the leads 21, 22 of the lead frame, and more preferably, the extending direction of the leads 21, 22 and the diagonal direction of the semiconductor chip 23 coincide with each other. It is assembled to do.
【００２０】リードフレーム上への半導体チップ２３の
ダイボンディングを前述のようにリード２１、２２の延
びる方向を基準にして組立てることにより、ホトインタ
ラプタや受光素子前面のスリット状開口部のスリット方
向と半導体チップ２３の対角線方向とを一致させること
ができる。すなわち、ホトインタラプタを製造するばあ
い、または図１に示されるような半導体チップ２３の受
光する光に対して不透光性材料２９によりスリット状開
口部を除いて周囲が被覆される受光素子を形成するばあ
い、ホトインタラプタや受光素子はリード２１、２２の
延びる方向と垂直な面を基準にして製造され、受光素子
２の前面に設けられるスリット状開口部は製作上の便宜
からその基準面に平行に設けられることが多く、スリッ
トの方向と四角形状（正方形）の半導体チップの対角線
方向とが一致し、スリット状開口部を透過した光を最大
限に受光することができる。そのため、細いスリット状
開口部によりＳＮ比を向上できるとともに感度のよい受
光素子がえられる。By assembling the die-bonding of the semiconductor chip 23 on the lead frame based on the extending direction of the leads 21 and 22 as described above, the slit direction of the slit-like opening in the front of the photo interrupter or the light receiving element and the semiconductor. It is possible to match the diagonal direction of the chip 23. That is, when manufacturing a photo interrupter, or a light receiving element whose periphery is covered by a non-transparent material 29 with respect to the light received by the semiconductor chip 23 as shown in FIG. 1 except for the slit-shaped openings. When forming, the photo interrupter and the light receiving element are manufactured with reference to a plane perpendicular to the extending direction of the leads 21 and 22, and the slit-shaped opening provided on the front surface of the light receiving element 2 has a reference plane for convenience of manufacturing. Are often provided in parallel with each other, and the direction of the slit and the diagonal direction of the quadrangular (square) semiconductor chip coincide with each other, and the light transmitted through the slit-shaped opening can be received to the maximum extent. Therefore, the SN ratio can be improved by the narrow slit-shaped opening, and a highly sensitive light receiving element can be obtained.
【００２１】図２は本発明のホトインタラプタの一実施
例の受光素子２部の斜視説明図である。本実施例は前述
の図４に示されるようなそれぞれエポキシ樹脂などの透
明樹脂でモールドされた発光素子１と受光素子２とが対
向して配置され、発光素子１および受光素子２の前面の
透光領域であるスリット状開口部３２、３３を除き不透
明樹脂によりさらにモールドして形成された支持枠３か
らなる２次モールドタイプのホトインタラプタである。
本実施例では、受光素子２そのものにはスリット状透光
領域を除いた不透光性材料による被覆はされていない
が、透明な樹脂で被覆された受光素子の周囲をホトイン
タラプタの支持枠３となる不透明樹脂により被覆され、
支持枠３に設けられたスリット状開口部３３のスリット
方向と半導体チップ２３の対角線方向とが一致するよう
に製造され、前記実施例と同様に細い開口部３３を透過
した光を効率よく受光することができ、ＳＮ比が高く、
高感度なホトインタラプタがえられる。FIG. 2 is a perspective explanatory view of the light receiving element 2 portion of one embodiment of the photo interrupter of the present invention. In this embodiment, as shown in FIG. 4, the light emitting element 1 and the light receiving element 2 which are respectively molded by a transparent resin such as epoxy resin are arranged so as to face each other, and the front surface of the light emitting element 1 and the light receiving element 2 are transparent. This is a secondary mold type photointerrupter comprising a support frame 3 formed by further molding with an opaque resin except for the slit-shaped openings 32 and 33 which are light regions.
In the present embodiment, the light receiving element 2 itself is not covered with an opaque material except for the slit-shaped light transmitting region, but the photo interrupter support frame 3 is provided around the light receiving element covered with the transparent resin. Coated with an opaque resin that becomes
It is manufactured so that the slit direction of the slit-shaped opening 33 provided in the support frame 3 and the diagonal direction of the semiconductor chip 23 coincide with each other, and efficiently receives the light transmitted through the narrow opening 33 as in the above-described embodiment. And the SN ratio is high,
A highly sensitive photo interrupter can be obtained.
【００２２】図３は本発明のホトインタラプタの他の実
施例の断面説明図である。本実施例は２次モールドタイ
プではなく、不透明材料からなる支持枠３であるケース
内に発光素子１および受光素子２が挿入固定されたもの
で、受光素子２は図２で示されたものと同様に透明樹脂
によりモールドされたもので、支持枠３に発光素子の光
を透過させる開口部３２および発光素子１からの光のみ
を透過させるスリット状の開口部３３が形成されてお
り、発光素子１および受光素子２がそれぞれ開口部３
２、３３に対向するように配置され、受光素子２につい
てはさらにその半導体チップの対角線の方向と開口部３
３のスリットの方向とが一致するように設けられてい
る。FIG. 3 is a sectional explanatory view of another embodiment of the photo interrupter of the present invention. In this embodiment, the light emitting element 1 and the light receiving element 2 are inserted and fixed in a case which is a support frame 3 made of an opaque material, not the secondary mold type. The light receiving element 2 is the same as that shown in FIG. Similarly, it is molded by a transparent resin, and the support frame 3 is formed with an opening 32 for transmitting light of the light emitting element and a slit-shaped opening 33 for transmitting only light from the light emitting element 1. 1 and the light receiving element 2 are openings 3 respectively
2 and 33, the light-receiving element 2 is further provided with a diagonal direction of the semiconductor chip and the opening 3.
It is provided so that the directions of the slits 3 are the same.
【００２３】その結果、前記各実施例と同様に細いスリ
ット状開口部を透過し、ＳＮ比の向上した信号を高感度
でうることができる。As a result, a signal having an improved S / N ratio can be obtained with high sensitivity by transmitting through a narrow slit-shaped opening as in each of the above embodiments.
【００２４】ホトインタラプタを用いて被検出物の位置
を検出するばあいなどには、発光素子１と受光素子２と
が対向した間隙に図６に示されるような遮光板が回転自
在に設けられるが、この遮光板に設けられるスリットの
方向と前記受光素子の半導体チップの対角線の方向とが
一致するように設けられることにより前述のように、小
さい半導体チップにより高い検出感度がえられる。When the position of the object to be detected is detected using a photo interrupter, a light shielding plate as shown in FIG. 6 is rotatably provided in the gap where the light emitting element 1 and the light receiving element 2 face each other. However, since the direction of the slit provided on the light shielding plate and the direction of the diagonal line of the semiconductor chip of the light receiving element are aligned with each other, as described above, high detection sensitivity can be obtained with the small semiconductor chip.
【００２５】前記各実施例ではスリットの方向と半導体
チップの対角線の方向とが一致するように配設したが、
対角線方向と一致させれば約２1/2倍の面積になり好ま
しいものの、必ずしもスリットの方向と対角線の方向と
が一致しなくてもスリット方向に対して半導体チップが
斜め方向に傾いておれば、受光面積が大きくなり検知感
度が向上する。In each of the above embodiments, the direction of the slit and the direction of the diagonal line of the semiconductor chip are arranged so as to coincide with each other.
Although it is preferable that the area is about 2 1/2 times when it is aligned with the diagonal direction, it is preferable that the semiconductor chip is tilted with respect to the slit direction even if the slit direction and the diagonal direction are not necessarily aligned. , The light receiving area is increased and the detection sensitivity is improved.
【００２６】[0026]
【発明の効果】本発明の半導体受光素子によれば、スリ
ット状開口部を経て受光する受光素子の半導体チップを
大きくしたり、発光素子の出力を上げなくても受光感度
を向上させることができ、安価でＳＮ比のすぐれた受光
素子がえられる。According to the semiconductor light receiving element of the present invention, the light receiving sensitivity can be improved without enlarging the semiconductor chip of the light receiving element which receives light through the slit-shaped opening and without increasing the output of the light emitting element. It is possible to obtain a light receiving element that is inexpensive and has an excellent SN ratio.
【００２７】また本発明のホトインタラプタによれば受
光感度が向上し、ＳＮ比の向上したセンサがえられ、位
置検出やモータの回転などを安価に、かつ、正確に検出
することができる。Further, according to the photo interrupter of the present invention, it is possible to obtain a sensor having an improved light receiving sensitivity and an improved SN ratio, and it is possible to accurately detect the position detection and the rotation of the motor at low cost.
【図１】本発明の半導体受光素子の一実施例の説明図で
ある。FIG. 1 is an explanatory diagram of an embodiment of a semiconductor light receiving element of the present invention.
【図２】本発明のホトインタラプタの一実施例の一部の
斜視説明図である。FIG. 2 is a perspective view of a part of an embodiment of the photo interrupter of the present invention.
【図３】本発明のホトインタラプタの他の実施例の断面
説明図である。FIG. 3 is a cross-sectional explanatory view of another embodiment of the photo interrupter of the present invention.
【図４】従来のホトインタラプタの一例の説明図であ
る。FIG. 4 is an explanatory diagram of an example of a conventional photo interrupter.
【図５】従来の半導体受光素子の一例の説明図である。FIG. 5 is an explanatory diagram of an example of a conventional semiconductor light receiving element.
【図６】ホトインタラプタに使用される遮光板の一例を
示す説明図である。FIG. 6 is an explanatory diagram showing an example of a light shielding plate used for a photo interrupter.
１ 発光素子 ２ 半導体受光素子 ３ 支持枠 ２１ リード ２２ リード ２３ 半導体チップ ２６ ダイパッド ２８ スリット状開口部 ２９ 不透光性樹脂 ３２ 開口部 ３３ 開口部 DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Semiconductor light receiving element 3 Support frame 21 Lead 22 Lead 23 Semiconductor chip 26 Die pad 28 Slit-like opening 29 Non-translucent resin 32 Opening 33 Opening
Claims (4)
ードフレームの該ダイパッド上に四角形状の受光用半導
体チップがボンディングされ、前記リード部とワイヤボ
ンディングがなされ、前記半導体チップが受光する光に
対し透明な樹脂により被覆された半導体受光素子であっ
て、前記半導体チップの一辺が前記リード部の延出方向
に対して斜めになるように前記半導体チップが設けられ
てなる半導体受光素子。1. A rectangular light-receiving semiconductor chip is bonded onto the die pad of a lead frame having a lead portion and a die pad portion, and wire bonding is performed with the lead portion, which is transparent to light received by the semiconductor chip. A semiconductor light receiving element covered with a resin, wherein the semiconductor chip is provided such that one side of the semiconductor chip is oblique to the extending direction of the lead portion.
がリード部とそれぞれワイヤボンディングされ、該半導
体チップおよびワイヤボンディング部が前記半導体チッ
プの正面のスリット状透光部を除き前記半導体チップが
受光する光に対し不透明な材料により被覆された半導体
受光素子であって、前記半導体チップの一辺が前記スリ
ット状透光部のスリット方向と斜めになるように前記半
導体チップが設けられてなる半導体受光素子。2. Each of the electrodes of the rectangular light-receiving semiconductor chip is wire-bonded to a lead portion, and the semiconductor chip and the wire-bonding portion are received by the semiconductor chip except for a slit-shaped light transmitting portion in front of the semiconductor chip. A semiconductor light receiving element covered with a material opaque to the light, wherein the semiconductor chip is provided so that one side of the semiconductor chip is oblique to the slit direction of the slit-shaped light transmitting portion. .
角形状の半導体チップからなる受光素子とが一定間隔を
おいて対向配置され、前記発光素子からの光が前記受光
素子に到達する一部透光領域を除いて前記発光素子の光
に対して不透明な材料により前記発光素子および受光素
子がそれぞれ被覆されてなるホトインタラプタであっ
て、前記受光素子の前に形成された透光領域がスリット
状に形成され、該スリットの方向と前記受光素子の半導
体チップの一辺とが斜めになるように前記受光素子が設
けられてなるホトインタラプタ。3. A light emitting element and a light receiving element formed of a quadrangular semiconductor chip for receiving the light of the light emitting element are arranged to face each other with a constant interval, and the light from the light emitting element reaches the light receiving element. A photointerrupter in which the light-emitting element and the light-receiving element are respectively covered with a material opaque to the light of the light-emitting element except for the partial light-transmitting area, wherein the light-transmitting area formed in front of the light-receiving element is A photo interrupter, which is formed in a slit shape and in which the light receiving element is provided so that the direction of the slit and one side of the semiconductor chip of the light receiving element are oblique.
角形状の半導体チップからなる受光素子とが一定間隔を
おいて対向配置され、前記発光素子からの光が前記受光
素子に到達する一部透光領域を除いて前記発光素子の光
に対して不透明な材料により前記発光素子および受光素
子がそれぞれ被覆されてなるホトインタラプタであっ
て、スリットが規則的に設けられた回転可能な遮光板が
前記発光素子と受光素子の対向部に間挿して設けられ、
該受光素子の前面の前記遮光板のスリットの方向と前記
受光素子の半導体チップの一辺とが斜めになるように前
記受光素子が設けられてなるホトインタラプタ。4. A light-emitting element and a light-receiving element formed of a rectangular semiconductor chip for receiving the light of the light-emitting element are arranged to face each other with a constant interval, and the light from the light-emitting element reaches the light-receiving element. A photo interrupter in which the light emitting element and the light receiving element are covered with a material that is opaque to the light of the light emitting element except for the partial light-transmitting region, and is a rotatable light shielding plate in which slits are regularly provided. Is provided by interposing in the facing portion of the light emitting element and the light receiving element,
A photo interrupter in which the light receiving element is provided so that the direction of the slit of the light shielding plate on the front surface of the light receiving element and one side of the semiconductor chip of the light receiving element are oblique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13965795A JP3752268B2 (en) | 1995-06-06 | 1995-06-06 | Semiconductor light receiving element and photointerrupter using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13965795A JP3752268B2 (en) | 1995-06-06 | 1995-06-06 | Semiconductor light receiving element and photointerrupter using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08335710A true JPH08335710A (en) | 1996-12-17 |
| JP3752268B2 JP3752268B2 (en) | 2006-03-08 |
Family
ID=15250378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13965795A Expired - Fee Related JP3752268B2 (en) | 1995-06-06 | 1995-06-06 | Semiconductor light receiving element and photointerrupter using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3752268B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007038597A (en) * | 2005-08-05 | 2007-02-15 | Seiko Epson Corp | Printer and lens detection method |
| US8008616B2 (en) | 2007-11-21 | 2011-08-30 | Kabushiki Kaisha Toshiba | Interrupter |
-
1995
- 1995-06-06 JP JP13965795A patent/JP3752268B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007038597A (en) * | 2005-08-05 | 2007-02-15 | Seiko Epson Corp | Printer and lens detection method |
| US8008616B2 (en) | 2007-11-21 | 2011-08-30 | Kabushiki Kaisha Toshiba | Interrupter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3752268B2 (en) | 2006-03-08 |
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