JPH08335657A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor deviceInfo
- Publication number
- JPH08335657A JPH08335657A JP14146695A JP14146695A JPH08335657A JP H08335657 A JPH08335657 A JP H08335657A JP 14146695 A JP14146695 A JP 14146695A JP 14146695 A JP14146695 A JP 14146695A JP H08335657 A JPH08335657 A JP H08335657A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- back surface
- groove
- mount conductor
- mount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、ＩＧＢＴ（絶縁ゲー
ト形バイポーラトランジスタ）などを樹脂封止した樹脂
封止半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device in which an IGBT (insulated gate bipolar transistor) or the like is resin-sealed.
【０００２】[0002]
【従来の技術】ＩＧＢＴなどの半導体チップは樹脂封止
されて使用される場合が多い。図４は従来のリードフレ
ームを示し、同図（ａ）は平面図、同図（ｂ）は同図
（ａ）を矢印Ａから見た側面図、同図（ｃ）は矢印Ｂか
ら見た側面図である。同図（ａ）において、半導体チッ
プをマウント（接着）するマウント導体部１０を裏面か
ら見た平面図を示す。半導体チップはこの図の裏側にマ
ウントされる。マウント導体部１０には端子部１１が端
子連結部１２を介して接続している。同図（ｃ）におい
て、半導体チップ４０は点線で示すようにマウント導体
部１０の表面にマウントされ、マウントされる一方の面
側の電極が端子連結部を介して端子部１１の一つと電気
的に接続される。そして、残りの端子部１１がボンデン
グワイヤによって半導体チップの他方の電極に電気的に
接続される。同図（ａ）ないし同図（ｃ）から分かるよ
うにマウント導体部１０の半導体チップ４０をマウント
する側の面と、反対の面（裏面）とは並行で、かつ裏面
は平坦である。2. Description of the Related Art In many cases, semiconductor chips such as IGBTs are sealed with resin and used. 4A and 4B show a conventional lead frame. FIG. 4A is a plan view, FIG. 4B is a side view of FIG. 4A viewed from arrow A, and FIG. It is a side view. FIG. 1A shows a plan view of the mount conductor portion 10 for mounting (bonding) a semiconductor chip as seen from the back surface. The semiconductor chip is mounted on the back side of this figure. A terminal portion 11 is connected to the mount conductor portion 10 via a terminal connecting portion 12. In FIG. 1C, the semiconductor chip 40 is mounted on the surface of the mount conductor portion 10 as shown by the dotted line, and the electrode on the one surface side to be mounted is electrically connected to one of the terminal portions 11 via the terminal connecting portion. Connected to. Then, the remaining terminal portion 11 is electrically connected to the other electrode of the semiconductor chip by a bonding wire. As can be seen from FIGS. 3A to 3C, the surface of the mount conductor portion 10 on which the semiconductor chip 40 is mounted and the opposite surface (rear surface) are parallel to each other and the rear surface is flat.
【０００３】また同図（ａ）の上部にある取り付け孔５
０は半導体装置を取り付ける時に使用する。図５は樹脂
成形用金型の断面図とリードフレームの側面図を示す。
樹脂注入口６が樹脂成形用金型５の左部分に設けられて
いる。また半導体チップ４０はマウント導体部１０の上
部（表面）に点線で示すようにマウント（接着）され
る。リードフレーム１の右側が端子部１１である。樹脂
注入口６から樹脂が注入され、空間を左から右に樹脂が
埋めて行く。従来のリードフレーム１は半導体チップを
マウントする面とその反対の面（裏面）とは並行で、か
つ裏面は平坦で、樹脂成形用金型５との間隔が極めて狭
く、この部分は狭間隔部７となっていた。The mounting hole 5 in the upper part of FIG.
0 is used when mounting the semiconductor device. FIG. 5 shows a cross-sectional view of the resin molding die and a side view of the lead frame.
The resin injection port 6 is provided in the left part of the resin molding die 5. Further, the semiconductor chip 40 is mounted (bonded) on the upper portion (front surface) of the mount conductor portion 10 as shown by a dotted line. The right side of the lead frame 1 is the terminal portion 11. The resin is injected from the resin injection port 6, and the space fills the resin from left to right. In the conventional lead frame 1, the surface on which the semiconductor chip is mounted and the opposite surface (rear surface) are parallel to each other, the rear surface is flat, and the space between the resin molding die 5 is extremely narrow. It was 7.
【０００４】図６は図５の樹脂成形用金型をＸ−Ｘ線で
切断した平面図とリードフレームの裏面の平面図を示
す。樹脂成形用金型５、樹脂注入口６、リードフレーム
１、マウント導体部１０、端子部１１が示されている。
樹脂は樹脂注入口６から注入され側面部８とマウント導
体部１０の上部、下部を通って充填される。このように
して樹脂封止半導体装置が製作される。FIG. 6 shows a plan view of the resin molding die of FIG. 5 taken along line XX and a plan view of the back surface of the lead frame. A resin molding die 5, a resin injection port 6, a lead frame 1, a mount conductor portion 10, and a terminal portion 11 are shown.
The resin is injected from the resin injection port 6 and is filled through the side surface portion 8 and the upper and lower portions of the mount conductor portion 10. In this way, the resin-sealed semiconductor device is manufactured.
【０００５】[0005]
【発明が解決しようとする課題】そのため、従来の樹脂
成形においては、図５に示すようにリードフレーム１の
マウント導体部１０と樹脂成形用金型５との間隔が狭い
狭間隔部７があり、その狭間隔部７で成形用の樹脂が流
動性が悪く、気泡等で目詰まりを起こし、充填不良とな
る場合がある。この充填不良箇所があると、電気的に絶
縁不良となり、半導体装置の耐圧が低下する。現在金型
先端面（図５の左側）に設けられる樹脂注入口６を、少
しでも樹脂の充填を良くするために、狭間隔部７側（図
面の下側）に来るように設けているが、充填性の点で充
分ではない。Therefore, in the conventional resin molding, as shown in FIG. 5, there is a narrow space 7 between the mount conductor 10 of the lead frame 1 and the resin molding die 5. In some cases, the resin for molding has a poor fluidity in the narrow interval portion 7, clogging is caused by bubbles or the like, and filling failure may occur. If there is such a defective filling portion, electrical insulation becomes defective, and the breakdown voltage of the semiconductor device decreases. At present, the resin injection port 6 provided on the front end surface of the mold (on the left side in FIG. 5) is provided so as to come to the narrow space portion 7 side (the lower side in the drawing) in order to improve the filling of the resin as much as possible. However, the filling property is not sufficient.
【０００６】この発明は、前記課題を解決するために、
半導体チップをマウントするマウント導体部の裏面に溝
や傾斜をもたせる加工を施し、この加工部分と樹脂成形
用金型との間の隙間を充分確保できるようすることで、
充分に樹脂が充填できるようにした樹脂封止半導体装置
を提供することを目的とする。[0006] The present invention, in order to solve the above problems,
By processing the back surface of the mount conductor part that mounts the semiconductor chip to have a groove and an inclination, and ensuring a sufficient gap between this processed part and the resin molding die,
An object of the present invention is to provide a resin-encapsulated semiconductor device that can be sufficiently filled with resin.
【０００７】[0007]
【課題を解決するための手段】前記の目的を達成するた
めに、半導体チップをマウントするマウント導体部のマ
ウント面と裏面とが並行で、かつマウント導体部の裏面
に溝を設ける。この裏面に少なくとも一本以上の溝を端
子部に向かって広がるように設けると効果的である。こ
の溝の形状がＶ字型もしくはＵ字型であるとよい。また
この裏面に設けた溝が編み目状に形成されてもよい。さ
らにこの裏面が平坦で、かつ端子部に向かって厚くなる
ように傾斜させるとよい。この裏面に溝を設け、かつ裏
面を端子部に向かって厚くなるように傾斜させるとよ
い。この裏面に少なくとも一本以上のＶ字型またはＵ字
型の溝を端子部に向かって広がるように設け、かつこの
裏面を端子部に向かって厚くなるように傾斜させるとよ
い。またこの裏面に編み目状の溝を設け、かつ裏面を端
子部に向かって厚くなるように傾斜させるとよい。To achieve the above object, a groove is provided on the back surface of the mount conductor portion in parallel with the mount surface and the back surface of the mount conductor portion for mounting the semiconductor chip. It is effective to provide at least one groove on the back surface so as to spread toward the terminal portion. The shape of the groove may be V-shaped or U-shaped. Further, the groove provided on the back surface may be formed in a stitch shape. Furthermore, it is preferable to incline the back surface so that it is flat and becomes thicker toward the terminal portion. It is advisable to provide a groove on this back surface and to incline the back surface so that it becomes thicker toward the terminal portion. At least one V-shaped groove or U-shaped groove may be provided on the back surface so as to widen toward the terminal portion, and the back surface may be inclined so as to become thicker toward the terminal portion. Further, it is preferable to provide a groove in the back surface and to incline the back surface so that the back surface becomes thicker toward the terminal portion.
【０００８】[0008]
【作用】リードフレームのマウント導体部の裏面に、溝
を形成し、充填が充分行われるようにこの部分の空間を
確保する。この溝が流動抵抗の大きい中央部に編み目状
に配することで樹脂の流動抵抗を小さくする効果がで
る。またＶ字溝を形成し、Ｖ字溝の分だけ空間を確保
し、かつ充填が進に従って溝部の空間が広くなるように
加工することで、流動抵抗が少なく、したがって樹脂の
流動性が向上する。さらに大きな効果が得られる加工と
して、裏面を平坦にし、かつ端子方向に向かって厚く
し、樹脂注入口の反対方向に向かって裏面が厚くなるよ
うにマウント導体部を樹脂成形用金型に配置すること
で、注入口から注入された樹脂は、流動抵抗が小さく、
スムーズに充填できる。さらに裏面に溝を設け、かつ端
子方向に向かって厚くし、樹脂注入口の反対方向に向か
って裏面が厚くなるようにマウント導体部を樹脂成形用
金型に配置することで、注入口から注入された樹脂は、
より一層、流動抵抗が小さく、スムーズに充填できる。Function: A groove is formed on the back surface of the mount conductor portion of the lead frame to secure a space for this portion so that the filling is sufficiently performed. By arranging the grooves in a central portion having a large flow resistance, a flow resistance of the resin can be reduced. Further, the V-shaped groove is formed, a space corresponding to the V-shaped groove is secured, and processing is performed so that the space of the groove portion becomes wider as the filling progresses, so that the flow resistance is reduced and therefore the fluidity of the resin is improved. . As a process to obtain a greater effect, the mount conductor is placed on the resin molding die so that the back surface is flattened and thickened in the terminal direction, and the back surface is thickened in the direction opposite to the resin injection port. Therefore, the resin injected from the injection port has a small flow resistance,
Can be filled smoothly. Furthermore, by providing a groove on the back surface and making it thicker toward the terminals and arranging the mount conductor part in the resin molding die so that the back surface becomes thicker in the direction opposite to the resin injection port, injection from the injection port The resin is
The flow resistance is even smaller and filling can be done smoothly.
【０００９】[0009]
【実施例】図１は第一実施例で、同図（ａ）は平面図、
同図（ｂ）は同図（ａ）の矢印Ａから見た側面図、同図
（ｃ）は同図（ａ）の矢印Ｂから見た側面図を示す。同
図（ａ）において、リードフレーム１を半導体チップが
マウントされる面の反対側（裏面）から見た全体の平面
図が示されている。半導体チップをマウントするマウン
ト導体部１０の裏面にＶ字溝２が形成され、このＶ字溝
２は図面の上から下に向かってつまり端子部１１に向か
って広くなっている。このリードフレーム１は、図示さ
れていない樹脂成形用金型に配置され、樹脂成形され
る。その場合、従来技術の項で説明したように、図の上
部が樹脂注入口側に来るように配置される。この配置に
ついては従来技術で説明した図５と同様である。点線部
が樹脂封止される部分２０で下の３本の導体は端子部１
１となる部分である。この端子部１１は端子連結部１２
を介してマウント導体部１０に接続される。半導体チッ
プをマウントするマウント導体部１０は他の箇所より厚
くなっており、機械的強度と低熱抵抗の確保を図ってい
る。溝の形状はＵ字型でも勿論よい。このような溝を付
けることで樹脂注入がスムーズに行われる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a first embodiment, and FIG.
The figure (b) shows the side view seen from the arrow A of the figure (a), and the figure (c) shows the side view seen from the arrow B of the figure (a). FIG. 1A shows an overall plan view of the lead frame 1 viewed from the side opposite to the surface on which the semiconductor chip is mounted (back surface). A V-shaped groove 2 is formed on the back surface of a mount conductor portion 10 for mounting a semiconductor chip, and this V-shaped groove 2 is widened from the top to the bottom of the drawing, that is, toward the terminal portion 11. The lead frame 1 is placed in a resin molding die (not shown) and resin-molded. In that case, as described in the section of the prior art, the upper part of the drawing is arranged so as to come to the resin injection port side. This arrangement is the same as in FIG. 5 described in the related art. In the portion 20 where the dotted line portion is resin-sealed, the lower three conductors are the terminal portion 1
This is the part that becomes 1. This terminal portion 11 is a terminal connecting portion 12
Is connected to the mount conductor portion 10 via. The mount conductor part 10 for mounting the semiconductor chip is thicker than the other parts, so as to ensure mechanical strength and low thermal resistance. The groove may be U-shaped as a matter of course. Resin injection can be smoothly performed by forming such grooves.
【００１０】同図（ｂ）において、Ｖ字溝２が２本形成
されている。マウント導体部１０の上面に半導体チップ
がマウントされる。図示されていない端子部１１は端子
連結部１２を介してマウント導体部１０と接続してい
る。同図（ｃ）において、リードフレーム１のマウント
導体部１０に端子連結部１２を介して端子部１１が接続
されている。図示しない半導体チップはマウント導体部
１０の右側の面にマウントされる（図４と同じ）。In FIG. 1B, two V-shaped grooves 2 are formed. A semiconductor chip is mounted on the upper surface of the mount conductor portion 10. The terminal portion 11 (not shown) is connected to the mount conductor portion 10 via the terminal connecting portion 12. In FIG. 1C, the terminal portion 11 is connected to the mount conductor portion 10 of the lead frame 1 via the terminal connecting portion 12. A semiconductor chip (not shown) is mounted on the right side surface of the mount conductor portion 10 (the same as FIG. 4).
【００１１】尚マウント導体部１０は半導体チップをマ
ウントする側の面と反対の面（裏面）はほぼ並行になっ
ている。図２は第二実施例で、同図（ａ）は平面図、同
図（ｂ）は同図（ａ）の矢印Ａから見た側面図、同図
（ｃ）は同図（ａ）の矢印Ｂから見た側面図を示す。同
図（ａ）において、溝３がマウント導体部１０の裏面に
形成されている。この図の上方から下方に樹脂が流れる
ため、この溝３は円内に示したＥ部の網み目状の溝３１
が斜めに形成され、樹脂の流れを良くする工夫をしてい
る。また、この実施例では溝３の形状はＵ字型である
が、勿論Ｖ字型やそれらの変形型でもよい。また編み目
状の溝３１は互いに交差してＸ字のように形成してもよ
い。また図面で上から下の方向に走る縦方向に３本の溝
３が形成されているが、さらに本数を増やしたり、マウ
ント導体部が小さい場合は２本にしてもよい。The surface (back surface) of the mount conductor 10 opposite to the surface on which the semiconductor chip is mounted is substantially parallel. 2A and 2B show a second embodiment, in which FIG. 2A is a plan view, FIG. 2B is a side view seen from an arrow A in FIG. 2A, and FIG. The side view seen from the arrow B is shown. In FIG. 3A, the groove 3 is formed on the back surface of the mount conductor portion 10. Since the resin flows from the upper side to the lower side in this figure, the groove 3 is formed by the mesh-shaped groove 31 of the E portion shown in the circle.
Are formed at an angle to improve the flow of resin. Further, in this embodiment, the shape of the groove 3 is U-shaped, but of course it may be V-shaped or a modification thereof. The stitch-shaped grooves 31 may cross each other and be formed in an X shape. Further, although three grooves 3 are formed in the vertical direction running from the top to the bottom in the drawing, the number may be further increased or two may be provided when the mount conductor portion is small.
【００１２】同図（ｂ）において、マウント導体部１０
の裏面側（この図の下側）には３本の縦方向の溝３が示
され、このマウント導体部１０に端子連結部１２を介し
て図示されていない端子部１１が接続している。同図
（ｃ）において、マウント導体部１０の溝は点線で示さ
れており、マウント導体部１０に端子部１１が接続して
いる。In FIG. 1B, the mount conductor portion 10
Three longitudinal grooves 3 are shown on the back surface side (lower side in this figure) of FIG. 3, and a terminal portion 11 (not shown) is connected to this mount conductor portion 10 via a terminal connecting portion 12. In FIG. 3C, the groove of the mount conductor portion 10 is shown by a dotted line, and the terminal portion 11 is connected to the mount conductor portion 10.
【００１３】尚マウント導体部１０は半導体チップをマ
ウントする側の面と反対の面（裏面）はほぼ並行になっ
ている。図３は第三実施例で、同図（ａ）は平面図、同
図（ｂ）は同図（ａ）の矢印Ａから見た側面図、同図
（ｃ）は矢印Ｂから見た側面図を示す。同図（ａ）にお
いて、マウント導体部１０の裏面は平坦であり、また図
示されていない樹脂成形用金型の樹脂注入口側であるこ
の図の上側から端子部１１に向かって、マウント導体部
１０は厚くなるように傾斜している。マウント導体部１
０に端子連結部１２を介して端子部１１が接続してい
る。The surface (back surface) of the mount conductor 10 opposite to the surface on which the semiconductor chip is mounted is substantially parallel. 3A and 3B show a third embodiment, FIG. 3A is a plan view, FIG. 3B is a side view seen from the arrow A in FIG. 3A, and FIG. 3C is a side view seen from the arrow B. The figure is shown. In FIG. 3A, the back surface of the mount conductor portion 10 is flat, and the mount conductor portion 10 extends from the upper side of the figure, which is the resin injection port side of a resin molding die (not shown), toward the terminal portion 11. 10 is inclined to be thick. Mount conductor part 1
The terminal portion 11 is connected to 0 through the terminal connecting portion 12.
【００１４】同図（ｂ）において、マウント導体部１０
と端子部１１は端子連結部１２を介して接続している。
同図（ｃ）において、マウント導体部１０の裏面は上部
から下部（端子部１１のある側）に向かって肉厚が厚く
なるように傾斜している。つまりマウント導体部１０の
裏面は傾斜加工され、傾斜加工部４となる。またマウン
ト導体部１０と端子部１１は端子連結部１２を介して接
続している。マウント導体部１０の上部が図示されてい
ない樹脂成形用金型の樹脂注入口のある側に配置される
ため、樹脂はスムーズに端子部１１の方向（図の下方）
に流れ、気泡による目詰りを起こさず、良好な充填がで
きる。In FIG. 1B, the mount conductor portion 10
And the terminal portion 11 are connected via the terminal connecting portion 12.
In FIG. 2C, the back surface of the mount conductor portion 10 is inclined so that the thickness increases from the upper portion toward the lower portion (the side where the terminal portion 11 is located). That is, the back surface of the mount conductor portion 10 is subjected to the inclination processing to become the inclination processing portion 4. Further, the mount conductor portion 10 and the terminal portion 11 are connected via the terminal connecting portion 12. Since the upper portion of the mount conductor portion 10 is arranged on the side of the resin molding die where the resin injection port is provided (not shown), the resin smoothly moves in the direction of the terminal portion 11 (downward in the figure).
It is possible to perform good filling without causing clogging due to air bubbles.
【００１５】図には示さないが、この他の実施例とし
て、第三実施例のマウント導体部１０の裏面に第一実施
例または第二実施例の溝を形成してもよい。Although not shown in the drawing, as another embodiment, the groove of the first embodiment or the second embodiment may be formed on the back surface of the mount conductor portion 10 of the third embodiment.
【００１６】[0016]
【発明の効果】この発明により、樹脂充填時における樹
脂の流動性が向上し、充填不良を防止できる。それに伴
い、絶縁耐圧不良なども防止でき、半導体装置の信頼性
が向上する。As described above, according to the present invention, the fluidity of the resin at the time of resin filling can be improved and defective filling can be prevented. Along with this, it is possible to prevent a dielectric breakdown voltage defect and the reliability of the semiconductor device is improved.
【図１】この発明の第一実施例で、（ａ）は平面図、
（ｂ）は（ａ）の矢印Ａから見た側面図、（ｃ）は
（ａ）の矢印Ｂから見た側面図FIG. 1 is a first embodiment of the present invention, (a) is a plan view,
(B) is a side view seen from the arrow A of (a), (c) is a side view seen from the arrow B of (a)
【図２】この発明の第二実施例で、（ａ）は平面図、
（ｂ）は（ａ）の矢印Ａから見た側面図、（ｃ）は
（ａ）の矢印Ｂから見た側面図FIG. 2 is a second embodiment of the present invention, (a) is a plan view,
(B) is a side view seen from the arrow A of (a), (c) is a side view seen from the arrow B of (a)
【図３】この発明の第三実施例で、（ａ）は平面図、
（ｂ）は（ａ）の矢印Ａから見た側面図、（ｃ）は
（ａ）の矢印Ｂから見た側面図FIG. 3 is a third embodiment of the present invention, (a) is a plan view,
(B) is a side view seen from the arrow A of (a), (c) is a side view seen from the arrow B of (a)
【図４】従来のリードフレームを示し、（ａ）は平面
図、（ｂ）は（ａ）を矢印Ａから見た側面図、（ｃ）は
（ａ）の矢印Ｂから見た側面図4A and 4B show a conventional lead frame, FIG. 4A is a plan view, FIG. 4B is a side view of FIG. 4A as seen from an arrow A, and FIG. 4C is a side view as seen from an arrow B of FIG.
【図５】樹脂成形用金型とリードフレームを示す断面図FIG. 5 is a sectional view showing a resin molding die and a lead frame.
【図６】図５をＸ−Ｘ線で切断した面の平面図FIG. 6 is a plan view of a plane of FIG. 5 taken along line XX.
１ リードフレーム ２ Ｖ字溝 ３ 溝 ４ 傾斜加工部 ５ 樹脂封止用金型 ６ 樹脂注入口 ７ 狭間隔部 ８ 側面部 １０ マウント導体部 １１ 端子部 １２ 端子連結部 ２０ 樹脂封止部 ３１ 編み目状の溝 ４０ 半導体チップ ５０ 取り付け孔 DESCRIPTION OF SYMBOLS 1 Lead frame 2 V-shaped groove 3 Groove 4 Inclination processing part 5 Resin sealing mold 6 Resin injection port 7 Narrow space part 8 Side surface part 10 Mount conductor part 11 Terminal part 12 Terminal connecting part 20 Resin sealing part 31 Knit Groove 40 Semiconductor chip 50 Mounting hole
Claims (8)
チップをマウントし、樹脂封止してなる半導体装置にお
いて、半導体チップをマウントするマウント導体部のマ
ウント面と裏面とが並行で、かつ、マウント導体部の裏
面に溝が設けられていることを特徴とする樹脂封止半導
体装置。1. In a semiconductor device in which a semiconductor chip is mounted on a mount conductor portion of a lead frame and sealed with resin, the mount surface and the back surface of the mount conductor portion for mounting the semiconductor chip are parallel to each other, and the mount conductor is mounted. A resin-sealed semiconductor device, wherein a groove is provided on the back surface of the portion.
上の溝を端子部に向かって広がるように設けたことを特
徴とする請求項１記載の樹脂封止半導体装置。2. The resin-sealed semiconductor device according to claim 1, wherein at least one groove is provided on the back surface of the mount conductor portion so as to widen toward the terminal portion.
とを特徴とする請求項２記載の樹脂封止半導体装置。3. The resin-sealed semiconductor device according to claim 2, wherein the shape of the groove is V-shaped or U-shaped.
る請求項１記載の樹脂封止半導体装置。4. The resin-encapsulated semiconductor device according to claim 1, wherein the groove is formed in a stitch shape.
部に向かって厚くなるように傾斜していることを特徴と
する樹脂封止半導体装置。5. A resin-encapsulated semiconductor device, wherein the back surface of the mount conductor portion is flat and is inclined so as to become thicker toward the terminal portion.
面が端子部に向かって厚くなるように傾斜していること
を特徴とする樹脂封止半導体装置。6. A resin-sealed semiconductor device, wherein a groove is provided on the back surface of the mount conductor portion, and the back surface is inclined so as to become thicker toward the terminal portion.
上のＶ字型もしくはＵ字型の溝を端子部に向かって広が
るように設けたことを特徴とする請求項６記載の樹脂封
止半導体装置。7. The resin-encapsulated semiconductor according to claim 6, wherein at least one V-shaped groove or U-shaped groove is provided on the back surface of the mount conductor portion so as to widen toward the terminal portion. apparatus.
けたことを特徴とする請求項６記載の樹脂封止半導体装
置。8. The resin-encapsulated semiconductor device according to claim 6, wherein a groove having a stitch shape is provided on the back surface of the mount conductor portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14146695A JPH08335657A (en) | 1995-06-08 | 1995-06-08 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14146695A JPH08335657A (en) | 1995-06-08 | 1995-06-08 | Resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08335657A true JPH08335657A (en) | 1996-12-17 |
Family
ID=15292546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14146695A Pending JPH08335657A (en) | 1995-06-08 | 1995-06-08 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08335657A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007012979A (en) * | 2005-07-01 | 2007-01-18 | Mitsubishi Electric Corp | Semiconductor element and method of manufacturing the same |
-
1995
- 1995-06-08 JP JP14146695A patent/JPH08335657A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007012979A (en) * | 2005-07-01 | 2007-01-18 | Mitsubishi Electric Corp | Semiconductor element and method of manufacturing the same |
| JP4713250B2 (en) * | 2005-07-01 | 2011-06-29 | 三菱電機株式会社 | Semiconductor device and method for manufacturing semiconductor device |
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