JPH08313486A - Method and apparatus for detecting charge quantity of static electricity of insulating substrate - Google Patents

Method and apparatus for detecting charge quantity of static electricity of insulating substrate

Info

Publication number
JPH08313486A
JPH08313486A JP12185795A JP12185795A JPH08313486A JP H08313486 A JPH08313486 A JP H08313486A JP 12185795 A JP12185795 A JP 12185795A JP 12185795 A JP12185795 A JP 12185795A JP H08313486 A JPH08313486 A JP H08313486A
Authority
JP
Japan
Prior art keywords
substrate
potential
ground plate
electrostatic charge
probe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12185795A
Other languages
Japanese (ja)
Inventor
Takayuki Oishi
貴之 大石
Isao Tani
功 谷
Hirotaka Muto
浩隆 武藤
Hiroyoshi Kitabayashi
宏佳 北林
Haruhisa Fujii
治久 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Display Inc
Mitsubishi Electric Corp
Original Assignee
Advanced Display Inc
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Display Inc, Mitsubishi Electric Corp filed Critical Advanced Display Inc
Priority to JP12185795A priority Critical patent/JPH08313486A/en
Publication of JPH08313486A publication Critical patent/JPH08313486A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)

Abstract

PURPOSE: To independently calculate the charge quantities of the upper and rear surfaces of an insulating substrate by opposing an earth plate and a surface potential detecting probe to each other on both sides of an insulating substrate to be measured through a definite gap. CONSTITUTION: The surface potential of the upper surface of a substrate 1 is measured and the substrate 1 is turned over to measure the surface potential of the rear surface of the substrate 1. The charge densities of static electricity on the upper and rear sides of the substrate 1 are calculated from the measured values of the surface potentials. Herein, the thickness of an insulating spacer 5, that is, the distance (d) between the rear surface of the substrate 1 and an earth plate 2 is set so that the electrostatic capacity Cd between the rear surface of the substrate 1 and the earth plate 2 is made larger than 1/10 the electrostatic capacity Cg of the substrate 1 itself to enable further accurate evaluation. Only by moving the probe 3a of a surface electrometer 3 so as to hold a definite gap from the substrate 1, the charge quantities of static electricity at a plurality of places can be measured and the distribution state thereof can be known.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、液晶表示装置用などの
絶縁性の基板の静電気を検出するための方法、およびそ
れに用いる検出装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for detecting static electricity of an insulating substrate for a liquid crystal display device and the like, and a detection device used therefor.

【0002】[0002]

【従来の技術】たとえば液晶表示装置は、その表面にス
イッチング素子や電極膜などが設けられた絶縁性基板
と、電極膜などが設けられたもう一方の絶縁性基板との
あいだに液晶材料が挟持されて構成されている。この液
晶表示装置の製造工程においては、加熱処理における加
熱プレートからの絶縁性基板の剥離やラビング工程など
の摩擦、エッチングのためのプラズマ照射などによって
絶縁性基板が静電気を帯びやすく、その帯電量によって
は放電が発生することがある。この放電によって、絶縁
性基板表面に形成されたスイッチング素子が損傷を受け
たり、電極膜に断線が生じたりして、不良となる危険性
がある。したがって、絶縁性基板の表面の静電気帯電状
況を正確に把握し、有効な放電防止対策や除電対策を施
すことは、製品歩留り向上を図る上で極めて有用であ
る。
2. Description of the Related Art For example, in a liquid crystal display device, a liquid crystal material is sandwiched between an insulating substrate provided with a switching element, an electrode film and the like on its surface and another insulating substrate provided with an electrode film and the like. Is configured. In the manufacturing process of this liquid crystal display device, the insulating substrate is likely to be charged with static electricity due to friction such as peeling of the insulating substrate from the heating plate in the heat treatment and rubbing process, and plasma irradiation for etching. May be discharged. Due to this discharge, the switching element formed on the surface of the insulating substrate may be damaged or the electrode film may be broken, resulting in a failure. Therefore, it is extremely useful to accurately grasp the electrostatic charge state on the surface of the insulating substrate and to take effective discharge prevention measures and static elimination measures in order to improve the product yield.

【0003】静電気の帯電量を測定するために、従来か
ら被測定物の表面電位を測定する方法が採られている。
その一例としては、図4のような、特開平4−5576
7号公報で示された静電気量測定器がある。図4におい
て、101はたとえば半導体基板の表面に設けられた絶
縁膜上の静電気量を測定する被測定物、102は駆動機
構である圧電素子、103は電極、104は電流検出手
段である電流計、105は接地されたステージ、106
は静電遮蔽である。
In order to measure the amount of static electricity, a method of measuring the surface potential of the object to be measured has been conventionally used.
As an example, as shown in FIG.
There is a static electricity measuring device disclosed in Japanese Patent No. In FIG. 4, 101 is an object to be measured for measuring the amount of static electricity on an insulating film provided on the surface of a semiconductor substrate, 102 is a piezoelectric element that is a drive mechanism, 103 is an electrode, and 104 is an ammeter that is a current detection means. , 105 is a grounded stage, 106
Is an electrostatic shield.

【0004】被測定物101は、ステージ105の上に
固定され、その裏面がステージ105を介して電気的に
接地されている。電極103が駆動機構である圧電素子
102によって上下に振動し、電極103と被測定物1
01との距離が周期的に変化する。この圧電素子102
と電極103とのあいだは、適当な長さのアームによっ
て接続されており、てこの原理で圧電素子の振動が拡大
されるようになっている。これにより電極103と被測
定物101とのあいだの静電容量が変化し、被測定物1
01の表面が帯電しているばあい、電極103に電流が
流れる。これを電流検出手段104によって検出する。
検出される電流I[A]は、被測定物101の電位をV
[V]、被測定物101と電極103とのあいだの距離
をD[m]、静電容量をC[F]、電極103の有効面
積をS[m2]として次式(1)で表わされる。
An object 101 to be measured is fixed on a stage 105, and its back surface is electrically grounded via the stage 105. The electrode 103 vibrates up and down by the piezoelectric element 102 that is a driving mechanism, and the electrode 103 and the DUT 1
The distance from 01 changes periodically. This piezoelectric element 102
The electrode and the electrode 103 are connected by an arm having an appropriate length, and the vibration of the piezoelectric element is magnified by the lever principle. As a result, the electrostatic capacitance between the electrode 103 and the DUT 101 changes, and the DUT 1
When the surface of 01 is charged, a current flows through the electrode 103. This is detected by the current detecting means 104.
The detected current I [A] is the potential of the DUT 101 being V
[V], the distance between the object to be measured 101 and the electrode 103 is D [m], the capacitance is C [F], and the effective area of the electrode 103 is S [m 2 ] and is expressed by the following equation (1). Be done.

【0005】[0005]

【数2】 [Equation 2]

【0006】ここで(1)式右辺においてV以外は既知
であるので、電流Iから被測定物101の電位Vを測定
できる。
Here, in the right side of the equation (1), other than V is known, so that the potential V of the object 101 to be measured can be measured from the current I.

【0007】[0007]

【発明が解決しようとする課題】従来の基板上に帯電し
た静電気電荷量の検出方法においては、以上のように、
被測定物を接地されたステージに固定して、その表面電
位によって帯電電荷量の検出が行われていたので、基板
がたとえば半導体基板で裏面の帯電が問題とならないば
あいはよいが、被測定物が絶縁性基板のような両面が絶
縁性の板状になっているばあい、測定する前に表と裏の
どちらが帯電しているのかが明らかになっていないと、
どちらの面にどれだけの静電気が帯電しているかを検出
することができない。また、絶縁性基板の両面が帯電し
ているばあいには、表側を測定する際に裏側がステージ
を通して接地されるので、裏側に蓄積した電荷がリーク
してしまい、裏側の帯電量を測定することができない。
また、表側を測定したのち、絶縁性基板をステージから
離す際に、基板の裏側とステージとのあいだで剥離帯電
が新たに生じ、絶縁性基板に不確定な静電気の帯電が生
じる。これらの理由から、従来の方法では絶縁性基板の
表裏それぞれに電荷が帯電して蓄積しているばあい、そ
れぞれの面の帯電量を求めることができない。
In the conventional method for detecting the amount of electrostatic charge charged on the substrate, as described above,
The object to be measured was fixed to a grounded stage, and the surface charge potential was used to detect the amount of charge.Therefore, if the substrate is, for example, a semiconductor substrate and charging on the back surface does not pose a problem, the measured object should be measured. If an object is an insulating board, such as an insulating board, and if both sides are insulative plates, it is not clear before the measurement whether the front side or the back side is charged.
It cannot detect how much static electricity is charged on which surface. Also, when both sides of the insulating substrate are charged, the back side is grounded through the stage when measuring the front side, so the charge accumulated on the back side leaks and the charge amount on the back side is measured. I can't.
Further, after the front side is measured, when the insulating substrate is separated from the stage, peeling charge is newly generated between the back side of the substrate and the stage, and indeterminate static charge is generated on the insulating substrate. For these reasons, in the conventional method, when electric charges are accumulated on the front and back surfaces of the insulating substrate and accumulated, the amount of charge on each surface cannot be obtained.

【0008】一方、基板の裏面側には電極膜やスイッチ
ング素子などが設けられていなくても、裏面側の帯電量
が多くなると、表側に廻り込んで放電することがあり、
スイッチング素子の破壊や電極膜断線などの問題が発生
し、裏面側の静電気の帯電も正確に把握して除電する必
要がある。
On the other hand, even if an electrode film or a switching element is not provided on the back side of the substrate, if the amount of charge on the back side increases, it may wrap around to the front side and discharge.
Problems such as switching element destruction and electrode film disconnection occur, and it is necessary to accurately grasp the static charge on the back surface side and eliminate the static electricity.

【0009】したがって、たとえばイオン照射により基
板の静電気の除電を図るばあい、どちらの面にどれだけ
の帯電量があるかを把握してイオンを照射しなければ有
効な除電を行えないが、従来の方法では片面の静電気電
荷量だけしか検出できず、その検出結果が除電のための
有効な指針にはならないという問題がある。
Therefore, for example, when the static electricity of the substrate is removed by ion irradiation, effective charge removal cannot be performed unless the surface is charged and the amount of charge is grasped before ion irradiation. The method (1) has a problem that only the electrostatic charge amount on one side can be detected, and the detection result does not serve as an effective guideline for static elimination.

【0010】本発明はこのような問題を解消するために
なされたもので、除電のための有効な指針をうるため
に、絶縁性基板の表裏それぞれの帯電電荷量を独立して
求めることができる静電気電荷量検出方法、およびその
検出装置を提供することを目的としている。
The present invention has been made in order to solve such a problem, and in order to obtain an effective guideline for static elimination, it is possible to independently obtain the charge amounts of the front and back surfaces of the insulating substrate. An object of the present invention is to provide an electrostatic charge amount detection method and a detection device therefor.

【0011】[0011]

【課題を解決するための手段】本発明の絶縁性基板の静
電気電荷量の検出方法は、(a)絶縁性の基板の一方の
面側に一定距離をあけて表面電位計の電位プローブを設
け、該電位プローブと対向して前記基板の他方の面側に
該基板と一定間隔を介して接地板を設け、前記表面電位
計により前記基板の前記一方の面の電位V1を測定し、
(b)(a)と同様の方法により前記基板の他方の面側
の電位V2を測定し、(c)前記基板の面と接地板間の
空気ギャップの単位面積あたりの静電容量をCd、前記
基板の単位面積あたりの静電容量をCg、1/C=1/
Cd+1/Cgとして前記基板の一方の面側の静電気電
荷密度Q1および該基板の他方の面側の静電気電荷密度
2
According to the method for detecting the amount of electrostatic charge of an insulating substrate of the present invention, (a) a potential probe of a surface electrometer is provided on one surface side of the insulating substrate at a certain distance. A grounding plate is provided on the other surface side of the substrate facing the potential probe with a certain distance from the substrate, and the surface potential meter measures the potential V 1 of the one surface of the substrate,
(B) The potential V 2 on the other surface side of the substrate is measured by the same method as in (a), and (c) the capacitance per unit area of the air gap between the surface of the substrate and the ground plate is Cd. , The capacitance per unit area of the substrate is Cg, 1 / C = 1 /
The electrostatic charge density Q 1 on one surface side of the substrate and the electrostatic charge density Q 2 on the other surface side of the substrate are defined as Cd + 1 / Cg.

【0012】[0012]

【数3】 (Equation 3)

【0013】により求めることを特徴とする。It is characterized by being obtained by

【0014】前記静電気電荷量の検出を前記絶縁性の基
板の複数箇所で行い、前記基板表面での静電気電荷量の
分布傾向を検出することが、帯電原因の解明や除電の効
果を上げる点から好ましい。
The detection of the amount of electrostatic charge at a plurality of points on the insulating substrate and the detection of the tendency of the distribution of the amount of electrostatic charge on the surface of the substrate are effective in elucidating the cause of charging and improving the effect of static elimination. preferable.

【0015】前記基板表面と前記接地板との間隙により
形成される単位面積あたりの静電容量が前記基板自身の
単位面積あたりの静電容量の1/10以上になるように
前記基板と前記接地板との間隙を設定することが、基板
の表裏それぞれの電荷が基板の表裏それぞれに生じさせ
る表面電位の違いを正確に分離できることとなり、表裏
それぞれの電荷量を誤差なく正確に検出することができ
る点で好ましい。
The contact between the substrate and the substrate is such that the capacitance per unit area formed by the gap between the substrate surface and the ground plate is 1/10 or more of the capacitance per unit area of the substrate itself. By setting the gap with the ground plane, it is possible to accurately separate the difference in the surface potentials generated by the electric charges on the front and back of the substrate, and it is possible to accurately detect the amount of electric charges on the front and back. It is preferable in terms.

【0016】本発明の静電気電荷量検出装置は、静電気
電荷量を測定する絶縁性の基板を部分的に支持する載置
台と、該載置台に載置された前記基板の一方の側に該基
板と一定間隙を有するように設けられた接地板と、前記
基板の前記一方の側と反対の他方の側に該接地板と対向
して電位プローブが設けられ前記基板の表面の電位を測
定するための前記電位プローブを有する表面電位計とを
含むものからなる。
The electrostatic charge detector of the present invention comprises a mounting table for partially supporting an insulating substrate for measuring the electrostatic charge, and the substrate on one side of the substrate mounted on the mounting table. And a potential probe is provided on the other side of the substrate opposite to the one side opposite to the ground plate so as to measure a potential of the surface of the substrate. And a surface electrometer having the above-mentioned potential probe.

【0017】前記表面電位計により測定された電位から
前記基板の表面の静電気電荷量を計算により求める演算
手段がさらに設けられていることが、電位を測定するこ
とにより直接電荷量を表示することができるため好まし
い。
A calculation means for calculating the electrostatic charge amount on the surface of the substrate from the potential measured by the surface electrometer is further provided, and the charge amount can be directly displayed by measuring the potential. It is preferable because it is possible.

【0018】前記接地板が導電性板材からなり、前記載
置台が該接地板上に設けられたスペーサであることが、
電位プローブを移動させるだけで、基板上の複数箇所の
電位を測定することができ、基板上の電荷分布を知るこ
とができるため好ましい。
The ground plate is made of a conductive plate material, and the mounting table is a spacer provided on the ground plate.
This is preferable because it is possible to measure the potentials at a plurality of points on the substrate and to know the charge distribution on the substrate simply by moving the potential probe.

【0019】前記載置台が前記基板を該基板面と平行方
向に搬送する搬送手段と兼用され、前記接地板および表
面電位計が、該搬送手段により搬送される前記基板の両
面側にそれぞれ該基板と一定間隙を有するように設けら
れた表面電位計の第1の電位プローブおよび第1の接地
板からなる第1の表面電位測定手段と、該第1のプロー
ブおよび第1の接地板の前記基板に対する関係が逆で前
記第1の表面電位測定手段と同様に設けられた表面電位
計の第2のプローブおよび第2の接地板からなる第2の
表面電位測定手段とからなることが、製造工程を中断さ
せることなく、製造工程のラインで直接帯電した電荷量
を検出し除電することができるため、好ましい。
The mounting table is also used as a transport means for transporting the substrate in a direction parallel to the surface of the substrate, and the ground plate and the surface electrometer are provided on both sides of the substrate transported by the transport means. And a first surface potential measuring means composed of a first potential probe and a first ground plate of a surface electrometer provided so as to have a constant gap, and the substrate of the first probe and the first ground plate. And a second surface potential measuring means composed of a second probe and a second ground plate of the surface electrometer provided in the same manner as the first surface potential measuring means. This is preferable because it is possible to detect the amount of electric charge directly charged in the manufacturing process line and to eliminate the electric charge without interruption.

【0020】前記第1および第2の表面電位測定手段が
前記基板の搬送される方向に沿って配設されることによ
り形成された1組の表面電位測定手段が、前記基板の搬
送される方向と垂直方向に複数組設けられていること
が、絶縁性基板を搬送させながら、表面電荷の面内分布
を正確に、かつ、簡単に測定できるため好ましい。
A set of surface potential measuring means formed by arranging the first and second surface potential measuring means along the conveying direction of the substrate is arranged in the conveying direction of the substrate. It is preferable to provide a plurality of sets in the direction perpendicular to the above because the in-plane distribution of the surface charges can be accurately and easily measured while the insulating substrate is being transported.

【0021】前記接地板の各辺の長さが該接地板と該接
地板に対向する電位プローブとの距離よりも大きく形成
されていることが、測定領域の接地部に対する静電容量
が平行平板キャパシタの容量として正確に規定され、そ
の値を容易に知ることができるため、電位測定値から電
荷密度を求めるばあいにも正確に求めることができて好
ましい。
When the length of each side of the ground plate is formed larger than the distance between the ground plate and the potential probe facing the ground plate, the parallel plate has a capacitance relative to the ground portion of the measurement region. Since the capacitance of the capacitor is accurately defined and its value can be easily known, it is preferable that the charge density can be accurately obtained when the charge density is obtained from the potential measurement value.

【0022】前記載置台に載置される絶縁性の基板の表
面と前記接地板との間隙により形成される単位面積あた
りの静電容量が前記基板の単位面積あたりの静電容量の
1/10以上となるように、前記接地板が設けられてい
ることが、基板の表裏それぞれの電荷が基板の表裏それ
ぞれに生じさせる表面電位の違いを正確に分離できるこ
ととなり、表裏それぞれの電荷量を誤差なく正確に検出
することができる点で好ましい。
The capacitance per unit area formed by the gap between the surface of the insulative substrate placed on the mounting table and the ground plate is 1/10 of the capacitance per unit area of the substrate. As described above, the provision of the ground plate makes it possible to accurately separate the difference in the surface potentials generated by the electric charges on the front and back sides of the substrate, and the electric charges on the front and back sides can be accurately separated. It is preferable because it can be accurately detected.

【0023】[0023]

【作用】本発明の静電気電荷検出方法によれば、測定さ
れる絶縁性の基板の両側に接地板と表面電位検出用のプ
ローブをそれぞれ一定の間隙を介して対向させることに
より前記基板の一方の面の電位を測定し、ついで同様に
して前記基板の他方の面の電位を測定し、両面の電位か
ら両面に帯電しているそれぞれの静電気電荷量を検出し
ているため、どちらの面にどれだけの静電気が帯電して
いるかを正確に把握することができ、正確に除電するこ
とができる。
According to the electrostatic charge detecting method of the present invention, the ground plate and the probe for detecting the surface potential are opposed to each other on both sides of the insulating substrate to be measured with a constant gap therebetween so that one of the substrates can be measured. The surface potential is measured, and then the potential of the other surface of the substrate is measured in the same manner, and the electrostatic charge amount charged on both surfaces is detected from the potentials on both surfaces. It is possible to accurately grasp whether or not only static electricity is charged, and it is possible to accurately eliminate static electricity.

【0024】また、従来のように接地板に直接接触させ
て測定する方法ではないため、裏面側の帯電電荷量を正
確に検出することができるだけでなく、測定後に基板を
接地板から引き離す必要がなく、分離する際に基板に新
たに静電気電荷が帯電することもない。
Further, since it is not a method of directly contacting with a ground plate as in the conventional method, it is not only possible to accurately detect the charge amount on the back surface side, but also it is necessary to separate the substrate from the ground plate after the measurement. In addition, the electrostatic charge is not newly charged on the substrate during the separation.

【0025】さらに基板上の複数箇所において帯電電荷
量を検出することにより、基板上での電荷分布の傾向を
知ることができ、一層除電の効果を上げることができる
とともに、帯電の原因を把握することもできる。
Further, by detecting the amount of charged electric charge at a plurality of points on the substrate, the tendency of the electric charge distribution on the substrate can be known, the effect of static elimination can be further enhanced, and the cause of the electrostatic charge can be grasped. You can also

【0026】本発明の静電気電荷量検出装置によれば、
基板の載置台上に絶縁性の基板を載置することにより接
地板が該基板の一方側に一定間隙を介して設けられてい
るため、該基板の他方側に設けられた表面電位計により
正確に電位を測定することができ、静電気電荷量を検出
することができる。しかも、絶縁性基板は接地板に直接
接触していないため、裏面側の静電気電荷量も正確に検
出することができるとともに、絶縁性基板を載置台から
除去するばあいでも、載置台との接触部は僅かであるた
め、静電気が発生しても僅かであり、測定値には影響を
与えない。
According to the electrostatic charge detector of the present invention,
Since the grounding plate is provided on one side of the substrate with a constant gap by placing the insulating substrate on the mounting table of the substrate, accurate measurement can be made by the surface electrometer provided on the other side of the substrate. The potential can be measured and the amount of electrostatic charge can be detected. Moreover, since the insulating substrate is not in direct contact with the ground plate, it is possible to accurately detect the amount of electrostatic charge on the back surface side, and even when the insulating substrate is removed from the mounting table, it does not contact the mounting table. Since the part is small, even if static electricity is generated, it is small and does not affect the measured value.

【0027】請求項6記載の構成にすることにより、絶
縁性基板表面で表面電位計の電位プローブを移動させな
がら電位を測定するだけで、絶縁性基板の表面上での静
電気の帯電分布を知ることができる。
With the structure according to the sixth aspect, the electrostatic charge distribution on the surface of the insulating substrate can be known only by measuring the potential while moving the potential probe of the surface electrometer on the surface of the insulating substrate. be able to.

【0028】さらに、請求項7記載の構成にすることに
より、表面電位計の電位プローブと接地板とからなる第
1および第2の電位測定手段が、絶縁性の基板の両面に
それぞれプローブを有するように少なくとも2組設けら
れているため、絶縁性基板を搬送させながら両面の静電
気電荷量を検出することができる。そのため、製造工程
間の搬送途中で搬送しながら両面の帯電した電荷量を正
確に測定することができ、帯電し易い原因の把握をでき
るとともに速やかに除電して不良発生の防止を図ること
ができる。
Further, according to the structure described in claim 7, the first and second potential measuring means composed of the potential probe of the surface electrometer and the ground plate have the probes on both surfaces of the insulating substrate. As described above, since at least two sets are provided, it is possible to detect the electrostatic charge amount on both surfaces while transporting the insulating substrate. Therefore, it is possible to accurately measure the amount of electric charges charged on both surfaces while being conveyed during the manufacturing process, to understand the cause of easy charging, and to quickly eliminate the charge to prevent the occurrence of defects. .

【0029】[0029]

【実施例】【Example】

実施例1 つぎに、本発明の静電気電荷量の検出方法およびその装
置の一実施例を図面を参照しながら説明する。図1にお
いて、1は被測定物である絶縁性の基板で、たとえば、
液晶表示装置用のガラス基板で寸法は300mm×40
0mm、その厚さは1mm、比誘電率は6である。2は
接地板でたとえばSUS製の500mm×500mm、
厚さが2mm程度の導電性板材、3は表面電位計、3a
は表面電位計のプローブである。5は接地板2に固定さ
れた、たとえば厚さ1mm程度のポリテトラフルオルエ
チレンなどからなる絶縁スペーサであり、この上に絶縁
性の基板1を載置する載置台としている。
Embodiment 1 Next, an embodiment of the electrostatic charge amount detection method and apparatus of the present invention will be described with reference to the drawings. In FIG. 1, reference numeral 1 is an insulating substrate which is an object to be measured.
Glass substrate for liquid crystal display device with dimensions of 300 mm x 40
The thickness is 0 mm, the thickness is 1 mm, and the relative dielectric constant is 6. 2 is a ground plate, for example, SUS made 500 mm x 500 mm,
Conductive plate material having a thickness of about 2 mm, 3 is a surface electrometer, 3a
Is the probe of the surface electrometer. Reference numeral 5 denotes an insulating spacer fixed to the ground plate 2 and made of, for example, polytetrafluoroethylene having a thickness of about 1 mm. The insulating spacer 5 serves as a mounting table on which the insulating substrate 1 is mounted.

【0030】まず、絶縁性の基板1の表側について図1
に示したように基板1の表側を上にして、その面の表面
電位を測定し、その値をV1とする。つぎに、基板1を
裏返して裏側を上にして、裏側の表面電位を測定し、そ
の値をV2とする。
First, as to the front side of the insulating substrate 1, FIG.
As shown in, the surface side of the substrate 1 is faced up, and the surface potential of the surface is measured, and the value is defined as V 1 . Next, the substrate 1 is turned upside down, the back side is faced up, and the surface potential of the back side is measured, and the value is defined as V 2 .

【0031】基板1の表側と裏側に帯電した静電気電荷
密度をそれぞれQ1、Q2とし、この構成による測定でえ
られた表面電位の測定値V1とV2から、Q1とQ2を求め
る方法をつぎに示す。表側の表面電位V1は、電荷Q1
よって誘起される電位と電荷Q2によって誘起される電
位を重畳したものであるので、測定値V1と基板1の蓄
積電荷密度Q1、Q2のあいだにはつぎの関係が成り立
つ。ここで、Cdは基板1と接地板2とのあいだの空気
ギャップの単位面積あたりの静電容量、Cgは基板1の
単位面積あたりの静電容量を表す。
[0031] The electrostatic charge density charged on the front side and the back side of the substrate 1 and Q 1, Q 2, respectively, from the measured values V 1 and V 2 of the surface potential is example as measured by this configuration, the Q 1, Q 2 The method of finding is shown below. Since the surface potential V 1 on the front side is a superposition of the potential induced by the charge Q 1 and the potential induced by the charge Q 2 , the measured value V 1 and the accumulated charge densities Q 1 , Q 2 of the substrate 1 are The following relationships are established between them. Here, Cd represents the capacitance per unit area of the air gap between the substrate 1 and the ground plate 2, and Cg represents the capacitance per unit area of the substrate 1.

【0032】[0032]

【数4】 [Equation 4]

【0033】測定値V2については、上式のQ1とQ2
入れ換えることによりつぎのようになる。
The measured value V 2 is as follows by replacing Q 1 and Q 2 in the above equation.

【0034】[0034]

【数5】 (Equation 5)

【0035】Cdは表面電位測定時の基板1と接地板2
との相対距離関係から既知であり、Cgも基板1の物性
値から既知である。図1に示される実施例では基板1と
接地板2の間隙dが1mmで、基板1の厚さgが1mm
で基板1の材料であるガラスの比誘電率εrが6である
ため、Cd=8.854×10-13[F/cm2]、Cg
=5.312×10-12[F/cm2]である。CdとC
gとの直列結合容量をCとすると、1/C=1/Cd+
1/Cgであるため、C=7.589×10-13[F/
cm2]となる。
Cd is the substrate 1 and the ground plate 2 when measuring the surface potential.
And Cg are also known from the physical property values of the substrate 1. In the embodiment shown in FIG. 1, the gap d between the substrate 1 and the ground plate 2 is 1 mm, and the thickness g of the substrate 1 is 1 mm.
Since the relative dielectric constant ε r of the glass that is the material of the substrate 1 is 6, Cd = 8.854 × 10 −13 [F / cm 2 ], Cg
= 5.312 × 10 -12 [F / cm 2 ]. Cd and C
If the series coupling capacitance with g is C, then 1 / C = 1 / Cd +
Since it is 1 / Cg, C = 7.589 × 10 −13 [F /
cm 2 ].

【0036】上式(3)はつぎのようになる。The above equation (3) is as follows.

【0037】[0037]

【数6】 (Equation 6)

【0038】これより、基板の両面に蓄積した電荷
1、Q2はつぎのようになる。
From this, the charges Q 1 and Q 2 accumulated on both sides of the substrate are as follows.

【0039】[0039]

【数7】 (Equation 7)

【0040】式(4)により、表面電位の測定値V
1[V]、V2[V]から、それぞれの面に帯電し蓄積し
た静電気電荷密度Q1[C/cm2]、Q2[C/cm2
を求めることができる。
From the equation (4), the measured value of the surface potential V
From 1 [V] and V 2 [V], electrostatic charge densities Q 1 [C / cm 2 ] and Q 2 [C / cm 2 ] charged and accumulated on the respective surfaces
Can be requested.

【0041】たとえば、表面電位測定値がV1=−85
7[V]、V2=−1000[V]であったばあい、式
(4)より、Q1=−1.02[pC/cm2]、Q2
−760.35[pC/cm2]となり、電荷のほとん
どは基板の裏側に蓄積していることがわかる。したがっ
て基板の除電を図るばあい、V1の測定結果のみから判
断して基板の表側にイオンを照射することは有効ではな
く、V1、V2両者の測定結果より求めたQ1、Q2から基
板の裏側にイオンを照射することが有効であることがわ
かる。
For example, the measured surface potential is V 1 = -85.
When 7 [V] and V 2 = −1000 [V], Q 1 = −1.02 [pC / cm 2 ] and Q 2 = from the formula (4).
It becomes −760.35 [pC / cm 2 ] and it can be seen that most of the charges are accumulated on the back side of the substrate. Therefore, it is not effective to irradiate the front side of the substrate with ions by judging only from the measurement result of V 1 when removing electricity from the substrate, and Q 1 and Q 2 obtained from the measurement results of both V 1 and V 2 are not effective. From this, it is found that it is effective to irradiate the back side of the substrate with ions.

【0042】また、たとえばV1=0[V]、V2=−1
000[V]であったばあい、Q1=2450[pC/
cm2]、Q2=−2860[pC/cm2]となり、表
側の表面電位がゼロであっても絶縁性の基板1には表、
裏、共に電荷が蓄積していることが分かる。
Further, for example, V 1 = 0 [V], V 2 = -1
If it is 000 [V], Q 1 = 2450 [pC /
cm 2 ], Q 2 = −2860 [pC / cm 2 ] and even if the surface potential on the front side is zero, the insulating substrate 1 has a surface,
It can be seen that charges are accumulated on the back.

【0043】また、絶縁性の基板1を絶縁スペーサ5で
支持するように構成したので、基板1の蓄積電荷が接地
板2へリークするのを防ぐことができるとともに、基板
1を接地板2から離す際に発生する、いわゆる剥離帯電
も防止することができるので、正確な静電気量評価が可
能となる。
Since the insulating substrate 1 is supported by the insulating spacers 5, it is possible to prevent the accumulated charges of the substrate 1 from leaking to the ground plate 2 and to move the substrate 1 from the ground plate 2 to the ground plate 2. Since it is possible to prevent so-called peeling electrification, which occurs when separating, it is possible to accurately evaluate the amount of static electricity.

【0044】また、ここでは絶縁スペーサ5の厚さ、す
なわち基板1の下面と接地板2との距離dが1mmのば
あいを示したが、この距離を、基板1の下面と接地板2
とのあいだの静電容量Cdが、基板1自身の静電容量C
gの10分の1よりも大きくなるように構成することに
より、表と裏の電荷量の違いを感度よく検出でき、より
正確な評価が可能となる。Cdがこれより小さくなると
表面電位の測定値に対するQ1、Q2の影響の度合が同程
度になり、Q1、Q2の違いが表と裏の表面電位の違いに
表われないので表と裏の電荷量を分離することができな
くなるため好ましくない。すなわち、Cd=k・Cgと
すると、式(2)、(3)はそれぞれつぎのようにな
る。
Although the thickness of the insulating spacer 5, that is, the distance d between the lower surface of the substrate 1 and the ground plate 2 is 1 mm, the distance is set to the lower surface of the substrate 1 and the ground plate 2.
And the electrostatic capacitance Cd is between the electrostatic capacitance C of the substrate 1 itself.
By configuring so as to be larger than 1/10 of g, the difference in the charge amount between the front and the back can be detected with high sensitivity, and more accurate evaluation becomes possible. When Cd is smaller than this, the degree of influence of Q 1 and Q 2 on the measured surface potential becomes similar, and the difference between Q 1 and Q 2 cannot be represented by the difference between the front and back surface potentials. It is not preferable because the amount of charges on the back cannot be separated. That is, assuming that Cd = k · Cg, equations (2) and (3) are as follows.

【0045】[0045]

【数8】 (Equation 8)

【0046】[0046]

【数9】 [Equation 9]

【0047】たとえばk=1/10としたばあい、Q1
の、V1、V2に対する影響の重みは11:10、すなわ
ちV1に対する影響の方がV2に対する影響よりも10%
大きく、Q2については、V2に対する影響の方がV1
対する影響よりも10%大きくなり、この違いを検出す
れば、測定値からQ1、Q2を区別することができる。一
方、たとえばk=1/50とすると、それぞれの重みの
差は2%と小さくなり、V1、V2に対するQ1、Q2の影
響の度合がほぼ同程度になるため、測定値からQ1、Q2
を区別することが困難になり、誤差も大きくなる。
For example, when k = 1/10, Q 1
The weight of the influence on V 1 and V 2 is 11:10, that is, the influence on V 1 is 10% greater than the influence on V 2 .
For Q 2 , the effect on V 2 is 10% greater than the effect on V 1 , and if this difference is detected, Q 1 and Q 2 can be distinguished from the measured values. On the other hand, when k = 1/50, for example, the difference between the respective weights becomes small at 2%, and the degree of influence of Q 1 and Q 2 on V 1 and V 2 is almost the same. 1 , Q 2
Becomes difficult to distinguish, and the error becomes large.

【0048】また本実施例では、基板1の寸法が300
mm×400mm、その厚さが1mm、比誘電率が6の
ばあいを示したが、異なる基板を用いたばあいでも、そ
の基板についてのCgをCg=εo・εr/g(εoは真
空の誘電率、εrは基板1の比誘電率、gは基板1の厚
さ)により計算し、その値を用いれば適用できる。ま
た、接地板2としてステンレス板を用いた例を示した
が、それ以外の材料であっても導電性材料であればよ
く、材質は制限されない。また、図1に示される例では
接地板2が基板1より大きく形成されているが、同程度
の大きさでもよく、また周縁部の電位測定に影響しない
程度に小さくすることもできる。
In this embodiment, the size of the substrate 1 is 300.
mm × 400 mm, its thickness was 1 mm, and the relative permittivity was 6, the Cg for that substrate was Cg = ε o · ε r / g (ε o even when different substrates were used. Is the dielectric constant of the vacuum, ε r is the relative dielectric constant of the substrate 1, and g is the thickness of the substrate 1). Further, an example in which a stainless steel plate is used as the ground plate 2 has been shown, but any other material may be used as long as it is a conductive material, and the material is not limited. Further, although the ground plate 2 is formed larger than the substrate 1 in the example shown in FIG. 1, the ground plate 2 may have the same size, or the ground plate 2 may be made small enough not to affect the measurement of the electric potential of the peripheral portion.

【0049】本実施例では大きな接地板2の上に絶縁ス
ペーサ5を介して基板1が設置されているため、表面電
位計3のプローブ3aを基板1と一定間隙のところを動
かすだけで複数箇所の静電気電荷量を測定することがで
き、その分布状況を知ることができる。
In this embodiment, since the substrate 1 is installed on the large ground plate 2 with the insulating spacer 5 interposed therebetween, the probe 3a of the surface electrometer 3 can be moved to a plurality of positions by moving the probe 3a at a certain gap. It is possible to measure the amount of electrostatic charge of, and to know its distribution status.

【0050】実施例2 図2は本発明の静電気電荷量検出装置の第2の実施例の
説明図である。本実施例2では絶縁性の基板1を載置す
る載置台をたとえば回転するローラ14により構成され
る搬送手段と兼用し、搬送しながら基板1の両面の静電
気電荷量を検出できるようにしたものである。
Embodiment 2 FIG. 2 is an explanatory diagram of a second embodiment of the electrostatic charge amount detecting device of the present invention. In the second embodiment, the mounting table on which the insulative substrate 1 is mounted is also used as a transporting unit constituted by, for example, a rotating roller 14, and the electrostatic charge amount on both sides of the substrate 1 can be detected while transporting. Is.

【0051】図2(a)において、10は基板1の上面
に対向するように設置された第1の電位プローブ、11
は基板1に対して第1の電位プローブ10とは反対側
に、基板1と一定間隙を介して平行に設置された第1の
接地板である。12は基板1の下面に対向するように設
置された第2の電位プローブ、13は基板1に対して第
2の電位プローブ12とは反対側に、基板1と平行で、
第1の接地板11との間隙と同じ間隙で設置された第2
の接地板である。14は基板1を搬送するための搬送手
段であるローラである。第1の電位プローブ10と基板
1上面との距離a、および第2の電位プローブ12と基
板1下面との距離aをいずれもa=3mmとし、第1の
接地板11と基板1下面との距離d、および第2の接地
板13と基板1上面との距離dをいずれもd=1mmと
した。すなわち、第1の接地板11および第1の電位プ
ローブ10からなる第1の表面電位測定手段と、第2の
接地板13および第2の電位プローブ12からなる第2
の表面電位測定手段とはそれぞれ基板1に対して逆方向
になる関係に設けられている。また、第1および第2の
接地板11、13は、その幅hがそれぞれ20mmの正
方形とした。
In FIG. 2A, reference numeral 10 denotes a first potential probe installed so as to face the upper surface of the substrate 1, and 11
Is a first ground plate installed on the side of the substrate 1 opposite to the first potential probe 10 in parallel with the substrate 1 with a constant gap. Reference numeral 12 denotes a second potential probe installed so as to face the lower surface of the substrate 1, 13 denotes a side opposite to the second potential probe 12 with respect to the substrate 1, parallel to the substrate 1,
The second installed with the same gap as the first ground plate 11
It is a ground plate. Reference numeral 14 is a roller which is a transporting means for transporting the substrate 1. The distance a between the first potential probe 10 and the upper surface of the substrate 1 and the distance a between the second potential probe 12 and the lower surface of the substrate 1 are both set to a = 3 mm, and the first ground plate 11 and the lower surface of the substrate 1 are separated from each other. Both the distance d and the distance d between the second ground plate 13 and the upper surface of the substrate 1 were set to d = 1 mm. That is, the first surface potential measuring means including the first ground plate 11 and the first potential probe 10, and the second surface potential measuring unit including the second ground plate 13 and the second potential probe 12.
The surface potential measuring means is provided in the opposite direction to the substrate 1. In addition, the first and second ground plates 11 and 13 are squares each having a width h of 20 mm.

【0052】まず、絶縁性の基板1の一測定点で第1の
電位プローブ10によって基板1の上面の表面電位V1
を測定する。つぎに前記測定点が第2の電位プローブ1
2に対向する位置になるようにローラ14上で絶縁性の
基板1を移動させ、前記測定点での基板1の下面の表面
電位V2を第2の電位プローブ12で測定する。
First, the surface potential V 1 of the upper surface of the substrate 1 is measured by the first potential probe 10 at one measurement point of the insulating substrate 1.
To measure. Next, the measurement point is the second potential probe 1
The insulative substrate 1 is moved on the roller 14 so as to be in a position facing 2 and the surface potential V 2 of the lower surface of the substrate 1 at the measurement point is measured by the second potential probe 12.

【0053】本実施例によれば、基板1を搬送しながら
上下両面の表面電位を測定できるように構成したので、
基板1の表裏両面の表面電位の測定が容易であり、か
つ、基板1の裏面の電荷のリークや従来の基板1を測定
台である接地板から取り外す際に生じる新たな剥離帯電
も生じないので、表裏両面の電荷量の正確な評価をでき
る。
According to this embodiment, the surface potentials of the upper and lower surfaces can be measured while the substrate 1 is being transported.
It is easy to measure the surface potentials on both the front and back surfaces of the substrate 1, and there is no charge leakage on the back surface of the substrate 1 and no new peeling charge that occurs when the conventional substrate 1 is removed from the ground plate that is the measuring stand. , It is possible to accurately evaluate the charge amount on both the front and back sides.

【0054】このばあい、接地板11、13の一辺の長
さhを、電位プローブ10、12と接地板11、13間
の距離b(=a+g+d)よりも大きくすることによ
り、基板1と接地板11、13間の静電容量が正確に規
定されるため、電位測定値から電荷密度を求める際に正
確に求めることができる。そのため、表面電荷密度の正
確な評価をすることができる。
In this case, the length h of one side of the ground plates 11 and 13 is made larger than the distance b (= a + g + d) between the potential probes 10 and 12 and the ground plates 11 and 13 to contact the substrate 1. Since the capacitance between the ground planes 11 and 13 is accurately defined, it is possible to accurately determine the charge density from the potential measurement value. Therefore, the surface charge density can be accurately evaluated.

【0055】また、このようにしてえられた基板1の表
裏の表面電位V1、V2から、実施例1で示した式(4)
を適用することにより、基板1の表裏それぞれに蓄積し
ている電荷密度を求めることができる。
From the surface potentials V 1 and V 2 on the front and back sides of the substrate 1 thus obtained, the formula (4) shown in Example 1 is used.
By applying, it is possible to obtain the charge density accumulated on each of the front and back surfaces of the substrate 1.

【0056】また、本実施例によれば、通常の製造工程
の搬送途中で帯電した電荷量を検出することができ、特
別な工程を必要としないで、静電気の発生しやすい原因
およびその対策ならびに発生した電荷の的確な除電を確
実に行うことができる。
Further, according to the present embodiment, it is possible to detect the amount of electric charge charged during the transportation in the normal manufacturing process, and without requiring a special process, the cause of the occurrence of static electricity, its countermeasure, and It is possible to surely remove the generated charge accurately.

【0057】ここで説明した例では、2対の電位プロー
ブと接地板にて絶縁性基板の表裏両面の電位を測定する
装置としたが、3対以上の電位プローブと接地板を用い
てもよく、そのばあい、絶縁性基板1の表面電位の面内
分布の測定がより容易になる。とくに、第1の電位プロ
ーブ10および第1の接地板11からなる第1の表面電
位測定手段と、第2の電位プローブ12および第2の接
地板13からなる第2の表面電位測定手段とが、図2
(a)に示されるように、基板の搬送方向に沿って設け
られた表面電位測定手段の組が基板の搬送方向と垂直方
向に複数組設けられれば、絶縁性基板1の表面電位の面
内分布を正確に、かつ、容易に測定することができる。
In the example described here, the device for measuring the potentials on both the front and back surfaces of the insulating substrate by the two pairs of potential probes and the ground plate is used, but three or more pairs of potential probes and the ground plate may be used. In that case, it becomes easier to measure the in-plane distribution of the surface potential of the insulating substrate 1. In particular, the first surface potential measuring means composed of the first potential probe 10 and the first ground plate 11 and the second surface potential measuring means composed of the second potential probe 12 and the second ground plate 13 are provided. , Fig. 2
As shown in (a), if a plurality of sets of surface potential measuring means provided along the substrate transport direction are provided in a direction perpendicular to the substrate transport direction, the surface potential of the insulating substrate 1 is within the plane. The distribution can be measured accurately and easily.

【0058】実施例3 図3は本発明の静電気電荷検出装置の他の実施例を示す
図である。図3において、20は実施例2で示した電位
測定部、21は電位測定部でえられた電位を取り込み、
電荷量を計算する計算機からなる演算手段である。演算
手段はたとえばアナログ電圧入力機能を備えた汎用のコ
ンピュータで構成されている。
Embodiment 3 FIG. 3 is a diagram showing another embodiment of the electrostatic charge detecting device of the present invention. In FIG. 3, 20 is the potential measuring unit shown in Example 2, 21 is the potential obtained by the potential measuring unit,
It is an operation unit that is composed of a computer that calculates the amount of electric charge. The calculation means is composed of, for example, a general-purpose computer having an analog voltage input function.

【0059】電位測定部20により基板1の表裏両面の
表面電位V1、V2が測定され、このV1、V2が演算手段
に取り込まれ、実施例1で示した式(4)にもとづいて
基板1の表裏それぞれの電荷量が求められ、演算手段2
1と接続された図示しない表示装置に表示される。
The surface potentials V 1 and V 2 on both the front and back surfaces of the substrate 1 are measured by the potential measuring unit 20, and these V 1 and V 2 are taken into the calculating means and based on the equation (4) shown in the first embodiment. The amount of electric charge on each of the front and back sides of the substrate 1 is calculated by the calculation means 2
1 is displayed on a display device (not shown) connected to the display device 1.

【0060】本実施例3の装置では、測定された電位に
基づいて電荷量を自動的に計算するようにしたので、簡
便に、しかも直接に電荷量を知ることができる。
In the apparatus of the third embodiment, the charge amount is automatically calculated based on the measured potential, so that the charge amount can be known easily and directly.

【0061】[0061]

【発明の効果】本発明の静電気電荷量の検出方法および
その装置によれば、測定される絶縁性の基板を接地板上
に一定間隙を介して配置し、表面電位を測定しているた
め、測定面の裏面側の電荷はほとんど変化せず、同様の
方法で両面の表面電位を測定して絶縁性の基板の両面に
帯電した電荷量を表裏別々にそれぞれ求めることができ
る。
According to the electrostatic charge amount detecting method and the apparatus therefor of the present invention, the insulating substrate to be measured is arranged on the ground plate with a constant gap, and the surface potential is measured. The charges on the back side of the measurement surface hardly change, and the surface potentials on both sides can be measured by the same method to determine the charge amounts charged on both sides of the insulating substrate separately for the front and back sides.

【0062】そのため、発生した静電気を除去する除電
を的確に行うことができるとともに、静電気の発生を防
止する対策を行い易く、静電気の放電により絶縁性基板
の表面に形成された電気的素子や配線が不良になるのを
防止することができる。その結果、液晶表示装置など電
子装置の歩留りを向上させることができる。
Therefore, it is possible to properly perform static elimination for removing the generated static electricity, and it is easy to take a measure to prevent the generation of the static electricity. Can be prevented from becoming defective. As a result, the yield of electronic devices such as liquid crystal display devices can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の静電気電荷量を検出する装置の一実施
例を説明する図である。
FIG. 1 is a diagram illustrating an embodiment of an apparatus for detecting an electrostatic charge amount according to the present invention.

【図2】本発明の静電気電荷量を検出する装置の他の実
施例を説明する図である。
FIG. 2 is a diagram illustrating another embodiment of the apparatus for detecting the amount of electrostatic charge according to the present invention.

【図3】本発明の静電気電荷量を検出する装置のさらに
他の実施例を説明する図である。
FIG. 3 is a diagram illustrating still another embodiment of the apparatus for detecting the amount of electrostatic charge according to the present invention.

【図4】従来の静電気電荷量を検出する装置を説明する
図である。
FIG. 4 is a diagram illustrating a conventional device for detecting an electrostatic charge amount.

【符号の説明】[Explanation of symbols]

1 基板 2 接地板 3 表面電位計 3a 電位プローブ 10 第1の電位プローブ 11 第1の接地板 12 第2の電位プローブ 13 第2の接地板 21 演算手段 DESCRIPTION OF SYMBOLS 1 Substrate 2 Ground plate 3 Surface potential meter 3a Potential probe 10 First potential probe 11 First ground plate 12 Second potential probe 13 Second ground plate 21 Computing means

───────────────────────────────────────────────────── フロントページの続き (72)発明者 武藤 浩隆 尼崎市塚口本町八丁目1番1号 三菱電機 株式会社中央研究所内 (72)発明者 北林 宏佳 尼崎市塚口本町八丁目1番1号 三菱電機 株式会社中央研究所内 (72)発明者 藤井 治久 尼崎市塚口本町八丁目1番1号 三菱電機 株式会社中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Hirotaka Muto 1-1-1, Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation Central Research Institute (72) Inventor Hiroka Kitabayashi 8-1-1 Tsukaguchihonmachi, Amagasaki Mitsubishi Electric Central Research Institute, Inc. (72) Inventor Haruhisa Fujii 8-1-1 Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation Central Research Institute

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 (a)絶縁性の基板の一方の面側に一定
距離をあけて表面電位計の電位プローブを設け、該電位
プローブと対向して前記基板の他方の面側に該基板と一
定間隔を介して接地板を設け、前記表面電位計により前
記基板の前記一方の面の電位V1を測定し、(b)
(a)と同様の方法により前記基板の他方の面側の電位
2を測定し、(c)前記基板の面と接地板間の空気ギ
ャップの単位面積あたりの静電容量をCd、前記基板の
単位面積あたりの静電容量をCg、1/C=1/Cd+
1/Cgとして前記基板の一方の面側の静電気電荷密度
1および該基板の他方の面側の静電気電荷密度Q2を 【数1】 により求めることを特徴とする絶縁性基板の静電気電荷
量の検出方法。
1. (a) A potential probe of a surface electrometer is provided on one surface side of an insulating substrate at a certain distance, and the substrate is provided on the other surface side of the substrate facing the potential probe. A ground plate is provided at regular intervals, and the potential V 1 of the one surface of the substrate is measured by the surface electrometer, (b)
The potential V 2 on the other surface side of the substrate is measured by the same method as in (a), and (c) the capacitance per unit area of the air gap between the surface of the substrate and the ground plate is Cd, The capacitance per unit area of Cg, 1 / C = 1 / Cd +
As 1 / Cg, the electrostatic charge density Q 1 on one surface side of the substrate and the electrostatic charge density Q 2 on the other surface side of the substrate are expressed as follows. A method for detecting the amount of electrostatic charge on an insulating substrate, which is characterized by:
【請求項2】 前記静電気電荷量の検出を前記絶縁性の
基板の複数箇所で行い、前記基板表面での静電気電荷量
の分布傾向を検出する請求項1記載の静電気電荷量の検
出方法。
2. The electrostatic charge amount detection method according to claim 1, wherein the electrostatic charge amount is detected at a plurality of locations on the insulating substrate, and a distribution tendency of the electrostatic charge amount on the substrate surface is detected.
【請求項3】 前記基板表面と前記接地板との間隙によ
り形成される単位面積あたりの静電容量が前記基板自身
の単位面積あたりの静電容量の1/10以上になるよう
に前記基板と前記接地板との間隙を設定する請求項1ま
たは2記載の静電気電荷量の検出方法。
3. The substrate so that the capacitance per unit area formed by the gap between the substrate surface and the ground plate is 1/10 or more of the capacitance per unit area of the substrate itself. 3. The electrostatic charge amount detection method according to claim 1, wherein a gap with the ground plate is set.
【請求項4】 静電気電荷量を測定する絶縁性の基板を
部分的に支持する載置台と、該載置台に載置された前記
基板の一方の側に該基板と一定間隙を有するように設け
られた接地板と、前記基板の前記一方の側と反対の他方
の側に該接地板と対向して電位プローブが設けられ前記
基板の表面の電位を測定するための前記電位プローブを
有する表面電位計とを含む静電気電荷量検出装置。
4. A mounting table for partially supporting an insulating substrate for measuring an electrostatic charge amount, and a mounting table provided on one side of the substrate mounted on the mounting table so as to have a constant gap with the substrate. And a surface potential having a potential probe for measuring the potential of the surface of the substrate, the potential probe being provided on the other side of the substrate opposite to the one side of the substrate. An electrostatic charge detection device including a meter.
【請求項5】 前記表面電位計により測定された電位か
ら前記基板の表面の静電気電荷量を計算により求める演
算手段がさらに設けられてなる請求項4記載の静電気電
荷量検出装置。
5. The electrostatic charge amount detecting device according to claim 4, further comprising calculation means for calculating an electrostatic charge amount on the surface of the substrate from a potential measured by the surface electrometer.
【請求項6】 前記接地板が導電性板材からなり、前記
載置台が該接地板上に設けられたスペーサである請求項
4記載の静電気電荷量検出装置。
6. The electrostatic charge detection device according to claim 4, wherein the ground plate is made of a conductive plate material, and the mounting table is a spacer provided on the ground plate.
【請求項7】 前記載置台が前記基板を該基板面と平行
方向に搬送する搬送手段と兼用され、前記接地板および
表面電位計が、該搬送手段により搬送される前記基板の
両面側にそれぞれ該基板と一定間隙を有するように設け
られた表面電位計の第1の電位プローブおよび第1の接
地板からなる第1の表面電位測定手段と、該第1のプロ
ーブおよび第1の接地板の前記基板に対する関係が逆で
前記第1の表面電位測定手段と同様に設けられた表面電
位計の第2のプローブおよび第2の接地板からなる第2
の表面電位測定手段とからなる請求項4または5記載の
静電気電荷量検出装置。
7. The mounting table is also used as a transport means for transporting the substrate in a direction parallel to the surface of the substrate, and the ground plate and the surface electrometer are respectively provided on both sides of the substrate transported by the transport means. A first surface potential measuring means composed of a first potential probe and a first ground plate of a surface electrometer provided so as to have a constant gap with the substrate; and a first probe and a first ground plate. A second probe including a second probe and a second ground plate of the surface electrometer, which are provided in the same manner as the first surface potential measuring means but have an opposite relationship to the substrate.
6. The electrostatic charge amount detecting device according to claim 4 or 5, further comprising a surface potential measuring means.
【請求項8】 前記第1および第2の表面電位測定手段
が前記基板の搬送される方向に沿って配設されることに
より形成された1組の表面電位測定手段が、前記基板の
搬送される方向と垂直方向に複数組設けられてなる請求
項7記載の静電気電荷量検出装置。
8. A set of surface potential measuring means formed by arranging the first and second surface potential measuring means along a direction in which the substrate is transported, and a set of surface potential measuring means for transporting the substrate. 8. The electrostatic charge amount detecting device according to claim 7, wherein a plurality of sets are provided in a direction perpendicular to the vertical direction.
【請求項9】 前記接地板の各辺の長さが該接地板と該
接地板に対向する電位プローブとの距離よりも大きく形
成されてなる請求項7または8記載の静電気電荷量検出
装置。
9. The electrostatic charge amount detecting device according to claim 7, wherein the length of each side of the ground plate is formed to be larger than the distance between the ground plate and the potential probe facing the ground plate.
【請求項10】 前記載置台に載置される絶縁性の基板
の前記接地板側の表面と該接地板との間隙により形成さ
れる単位面積あたりの静電容量が前記基板の単位面積あ
たりの静電容量の1/10以上となるように、前記接地
板が設けられてなる請求項4、5、6、7、8または9
記載の静電気電荷量検出装置。
10. The capacitance per unit area formed by the gap between the ground plate side surface of the insulating substrate placed on the mounting table and the ground plate is equal to the capacitance per unit area of the substrate. The grounding plate is provided so as to have a capacitance of 1/10 or more of the capacitance.
The electrostatic charge detection device described.
JP12185795A 1995-05-19 1995-05-19 Method and apparatus for detecting charge quantity of static electricity of insulating substrate Pending JPH08313486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12185795A JPH08313486A (en) 1995-05-19 1995-05-19 Method and apparatus for detecting charge quantity of static electricity of insulating substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12185795A JPH08313486A (en) 1995-05-19 1995-05-19 Method and apparatus for detecting charge quantity of static electricity of insulating substrate

Publications (1)

Publication Number Publication Date
JPH08313486A true JPH08313486A (en) 1996-11-29

Family

ID=14821658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12185795A Pending JPH08313486A (en) 1995-05-19 1995-05-19 Method and apparatus for detecting charge quantity of static electricity of insulating substrate

Country Status (1)

Country Link
JP (1) JPH08313486A (en)

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JP2012255659A (en) * 2011-06-07 2012-12-27 Jfe Steel Corp Electric conduction point evaluation device of metal plate surface
JP2013190351A (en) * 2012-03-14 2013-09-26 Hioki Ee Corp Charged body detection device and charged body detection method
KR101430739B1 (en) * 2012-09-28 2014-08-18 세메스 주식회사 Jig and Charge determining method
CN105280515A (en) * 2015-10-22 2016-01-27 上海华虹宏力半导体制造有限公司 Method for testing charge accumulation in manufacturing process of chip
CN108152354A (en) * 2018-02-05 2018-06-12 四川大学 A kind of dielectric material surface charge self-operated measuring unit based on two axis slide units
CN108375608A (en) * 2018-03-12 2018-08-07 昆山国显光电有限公司 Substrate detection apparatus
CN112977897A (en) * 2021-03-25 2021-06-18 中国人民解放军63919部队 Equipment for loading charges to simulated lunar dust based on electrostatic corona technology

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100351693B1 (en) * 1999-10-20 2002-09-11 닛본 덴기 가부시끼가이샤 Apparatus for measuring electric charge
JP2012255659A (en) * 2011-06-07 2012-12-27 Jfe Steel Corp Electric conduction point evaluation device of metal plate surface
JP2013190351A (en) * 2012-03-14 2013-09-26 Hioki Ee Corp Charged body detection device and charged body detection method
KR101430739B1 (en) * 2012-09-28 2014-08-18 세메스 주식회사 Jig and Charge determining method
CN105280515A (en) * 2015-10-22 2016-01-27 上海华虹宏力半导体制造有限公司 Method for testing charge accumulation in manufacturing process of chip
CN108152354A (en) * 2018-02-05 2018-06-12 四川大学 A kind of dielectric material surface charge self-operated measuring unit based on two axis slide units
CN108375608A (en) * 2018-03-12 2018-08-07 昆山国显光电有限公司 Substrate detection apparatus
CN112977897A (en) * 2021-03-25 2021-06-18 中国人民解放军63919部队 Equipment for loading charges to simulated lunar dust based on electrostatic corona technology

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