JPH08311696A - Formation of composite plated film having gradient composition - Google Patents

Formation of composite plated film having gradient composition

Info

Publication number
JPH08311696A
JPH08311696A JP11991995A JP11991995A JPH08311696A JP H08311696 A JPH08311696 A JP H08311696A JP 11991995 A JP11991995 A JP 11991995A JP 11991995 A JP11991995 A JP 11991995A JP H08311696 A JPH08311696 A JP H08311696A
Authority
JP
Japan
Prior art keywords
plating film
plating
film
plating bath
gradient composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11991995A
Other languages
Japanese (ja)
Inventor
Yasuisa Kobayashi
靖功 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brother Industries Ltd
Original Assignee
Brother Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brother Industries Ltd filed Critical Brother Industries Ltd
Priority to JP11991995A priority Critical patent/JPH08311696A/en
Publication of JPH08311696A publication Critical patent/JPH08311696A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide a forming method of a composite plated film having a gradient composition capable of forming efficiently the composite plated film having the gradient composition excellent in adhesion and good in quality by a simple method. CONSTITUTION: A plating bath in which SiC particles 3 are dispersed uniformly in a prescribed dispersion concn. in a plating bath 4 consisting essentially of nickel sulfamate is used, and an anode 4 and a base material 1 (cathode) are arranged in the plating bath, and a direct power source is connected thereto. An agitating device 7 to uniformize the particle dispersion in the plating bath 4 is provided at a bottom surface of the plating bath 4. The composite plated film having the gradient composition in which the particle content is different in a film thickness direction of the plated film is formed on the base material 1 by controlling continuously the plating liq. temp. of the plating bath and the current density to be impressed to both electrodes.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、各種機械装置類を構成
する軸及び軸受部品等に施される複合メッキ皮膜の形成
方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a composite plating film applied to shafts, bearings and the like which make up various mechanical devices.

【0002】[0002]

【従来の技術】従来、複合メッキ皮膜の膜厚方向に対し
て粒子含有量を異ならせた傾斜組成の複合メッキ皮膜を
基材上に形成するための複合メッキ皮膜の形成方法とし
ては、図4に示すような方法が用いられている。
2. Description of the Related Art Conventionally, as a method of forming a composite plating film for forming a composite plating film having a gradient composition in which the content of particles is different in the film thickness direction of the composite plating film on a base material, FIG. The method as shown in is used.

【0003】これは、分散粒子濃度が異なる3台のメッ
キ浴を用い、電解メッキ法により基材上に複合メッキ皮
膜を形成するものである。まず、粒子54が高濃度に分
散されたメッキ浴51中に、陽極55と被メッキ物であ
る基材56とを配置する。陰極となる基材56及び陽極
55は、直流電源57に接続され、所定の電流密度が印
加されると、図5(a)に示すように、基材56表面に
粒子含有量が高いメッキ皮膜61が形成される。
In this method, a composite plating film is formed on a substrate by electrolytic plating using three plating baths having different dispersed particle concentrations. First, the anode 55 and the base material 56 that is the object to be plated are placed in the plating bath 51 in which the particles 54 are dispersed in a high concentration. The base material 56 and the anode 55, which are the cathode, are connected to a DC power source 57, and when a predetermined current density is applied, as shown in FIG. 5A, a plating film having a high particle content is formed on the surface of the base material 56. 61 is formed.

【0004】次に、メッキ皮膜61が形成された基材5
6を、メッキ浴51よりも粒子濃度の低いメッキ浴52
に移し、同様の方法でメッキ皮膜を形成すると、図5
(b)に示すように、メッキ皮膜61より粒子含有量の
低いメッキ皮膜62がメッキ皮膜61上に形成される。
Next, the base material 5 on which the plating film 61 is formed
6 is a plating bath 52 having a particle concentration lower than that of the plating bath 51.
5 and forming a plating film by the same method as shown in FIG.
As shown in (b), a plating film 62 having a particle content lower than that of the plating film 61 is formed on the plating film 61.

【0005】さらに、メッキ浴52よりも粒子濃度の低
いメッキ浴53を用い、同様の方法でメッキ皮膜を形成
すると、図5(c)に示すように、メッキ皮膜62より
さらに粒子含有量の低いメッキ皮膜63がメッキ皮膜6
2上に形成される。このようにして、皮膜表層に向かっ
て粒子含有量が少なくなるような傾斜組成の複合メッキ
皮膜60を形成していた。
Further, when a plating film having a particle concentration lower than that of the plating bath 52 is used and a plating film is formed by the same method, as shown in FIG. 5C, the particle content is lower than that of the plating film 62. Plating film 63 is plating film 6
2 is formed on. In this way, the composite plating film 60 having a gradient composition in which the particle content decreases toward the surface layer of the film was formed.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上述し
たような従来の形成方法で、より連続的な傾斜組成を持
たせるためには粒子分散濃度の異なるメッキ浴を数多く
準備する必要がある。その上、メッキ浴の数だけメッキ
作業を必要とするため、作業に多くの手間と時間を要す
るという問題点があった。
However, in the conventional forming method as described above, it is necessary to prepare many plating baths having different particle dispersion concentrations in order to have a more continuous gradient composition. In addition, the number of plating baths required plating work, which requires a lot of labor and time.

【0007】また、メッキ皮膜を形成した基材を次のメ
ッキ浴に移す際、一旦基材をメッキ浴外に出さなければ
ならず、そのためにメッキ界面の密着性が劣り、上記の
ような方法によって形成されたメッキ皮膜は剥離が生じ
やすい問題点もあった。特に、分散粒子に4フッ化エチ
レン樹脂(以下、PTFEとする)を用いる場合、その
優れた撥水性のために、メッキ皮膜形成後に一旦メッキ
浴外に出すと、それ以降のメッキ皮膜が密着よく形成さ
れない欠点があった。
Further, when transferring the base material having the plating film formed thereon to the next plating bath, the base material has to be once taken out of the plating bath, which results in poor adhesion at the plating interface. The plating film formed by the method also has a problem that peeling easily occurs. In particular, when a tetrafluoroethylene resin (hereinafter referred to as PTFE) is used for the dispersed particles, it has excellent water repellency, and once it is taken out of the plating bath after forming the plating film, the plating film after that adheres well. There was a defect that it was not formed.

【0008】本発明は、上述した問題点を解決するため
になされたものであり、密着性に優れた質の良い傾斜組
成複合メッキ皮膜を簡単な方法で効率良く形成すること
ができる傾斜組成複合メッキ皮膜の形成方法を提供する
ことを目的としている。
The present invention has been made in order to solve the above-mentioned problems, and a gradient composition composite capable of efficiently forming a high quality gradient composition composite plating film having excellent adhesion with a simple method. It is intended to provide a method for forming a plating film.

【0009】[0009]

【課題を解決するための手段】この目的を達成するため
に、本発明の傾斜組成複合メッキ皮膜の形成方法は、メ
ッキ皮膜の膜厚方向に対して粒子含有量を異ならせた複
合メッキ皮膜を基材の表面に形成する複合メッキ皮膜の
形成方法であって、粒子が分散された所定濃度のメッキ
浴中に前記基材を浸漬した状態で、そのメッキ浴のメッ
キ液の温度と前記基材に印加する電流の電流密度とを連
続的に制御することにより、メッキ皮膜の膜厚方向に対
して粒子含有量が異なる複合メッキ皮膜を前記基材の表
面に形成する。
In order to achieve this object, a method of forming a gradient composition composite plating film of the present invention uses a composite plating film having different particle contents in the thickness direction of the plating film. A method for forming a composite plating film formed on the surface of a base material, wherein the base material is immersed in a plating bath having a predetermined concentration in which particles are dispersed, and the temperature of the plating solution in the plating bath and the base material. By continuously controlling the current density of the current applied to the composite plating film having different particle contents in the thickness direction of the plating film, the composite plating film is formed on the surface of the base material.

【0010】さらに、前記メッキ浴のメッキ液の温度を
所定温度から徐々に冷却すると共に、前記電流密度を所
定値から徐々に上昇させることにより、膜の表層に向か
って前記粒子含有量が低くなる複合メッキ皮膜を形成す
る。
Further, by gradually cooling the temperature of the plating solution in the plating bath from a predetermined temperature and gradually increasing the current density from a predetermined value, the content of particles becomes lower toward the surface layer of the film. Form a composite plating film.

【0011】また、前記メッキ浴のメッキ液の温度を所
定温度から徐々に上昇すると共に、前記電流密度を所定
値から徐々に下降させることにより、膜の表層に向かっ
て前記粒子含有量が高くなる複合メッキ皮膜を形成す
る。
Further, by gradually increasing the temperature of the plating solution in the plating bath from a predetermined temperature and gradually decreasing the current density from a predetermined value, the particle content increases toward the surface layer of the film. Form a composite plating film.

【0012】さらに、前記粒子に、炭化珪素(Si
C)、4フッ化エチレン樹脂(PTFE)、もしくはこ
れらを混合したものを使用しても良い。
Further, the particles are made of silicon carbide (Si
C) Tetrafluoroethylene resin (PTFE) or a mixture thereof may be used.

【0013】[0013]

【作用】上記の構成を有する本発明の傾斜組成複合メッ
キ皮膜は、一層のメッキ皮膜で構成され、そのメッキ皮
膜の膜厚方向に対して前記粒子の含有量が異なっている
ので、従来のように、粒子の含有量を異ならせたメッキ
皮膜を複数層重ねることにより形成した傾斜組成の複合
メッキ皮膜よりも密着性に優れ、剥離等を生じにくい。
The gradient composition composite plating film of the present invention having the above structure is composed of one layer of the plating film, and the content of the particles is different in the thickness direction of the plating film. In addition, the adhesiveness is superior to that of a composite plating film having a gradient composition formed by stacking a plurality of plating films having different particle contents, and peeling is less likely to occur.

【0014】また、上記の構成を有する本発明の傾斜組
成複合メッキ皮膜の形成方法は、粒子が分散された所定
濃度のメッキ浴中に前記基材を浸漬した状態で、そのメ
ッキ浴のメッキ液の温度と前記基材に印加する電流の電
流密度とを連続的に制御することにより、メッキ皮膜の
膜厚方向に対して粒子含有量が異なる複合メッキ皮膜を
前記基材の表面に形成するので、簡単な方法で、容易に
傾斜組成の複合メッキ皮膜を形成することができる。
In the method for forming a gradient composition composite plating film of the present invention having the above-mentioned structure, the plating solution of the plating bath is prepared by immersing the substrate in a plating bath having a predetermined concentration in which particles are dispersed. By continuously controlling the temperature and the current density of the current applied to the substrate, a composite plating film having different particle contents in the film thickness direction of the plating film is formed on the surface of the substrate. A composite plating film having a gradient composition can be easily formed by a simple method.

【0015】さらに、前記メッキ浴のメッキ液の温度を
所定温度から徐々に冷却すると共に、前記電流密度を所
定値から徐々に上昇させることにより、膜の表層に向か
って前記粒子含有量が低くなる複合メッキ皮膜を形成す
るので、膜の表層に向かって連続的に前記粒子含有量が
低くなるタイプの複合メッキ皮膜を、品質良く、容易に
形成することができる。
Further, by gradually cooling the temperature of the plating solution in the plating bath from a predetermined temperature and gradually increasing the current density from a predetermined value, the content of particles becomes lower toward the surface layer of the film. Since the composite plating film is formed, it is possible to easily form the composite plating film of a type in which the content of the particles is gradually decreased toward the surface layer of the film with good quality.

【0016】また、前記メッキ浴のメッキ液の温度を所
定温度から徐々に上昇すると共に、前記電流密度を所定
値から徐々に下降させることにより、膜の表層に向かっ
て前記粒子含有量が高くなる複合メッキ皮膜を形成する
ので、膜の表層に向かって連続的に前記粒子含有量が高
くなるタイプの複合メッキ皮膜を、品質良く、容易に形
成することができる。
Further, by gradually increasing the temperature of the plating solution in the plating bath from a predetermined temperature and gradually decreasing the current density from a predetermined value, the particle content increases toward the surface layer of the film. Since the composite plating film is formed, it is possible to easily form a high quality composite plating film of the type in which the content of particles is continuously increased toward the surface layer of the film.

【0017】さらに、前記粒子に、炭化珪素(Si
C)、4フッ化エチレン樹脂(PTFE)、もしくはこ
れらを混合したものを使用した場合、従来の方法では、
密着性が悪いとされていたが、本発明の方法によれば、
これらの粒子を用いた場合でも、密着性の良い、高品質
の複合メッキ皮膜を形成することができる。
Furthermore, silicon carbide (Si
C) When a tetrafluoroethylene resin (PTFE) or a mixture thereof is used, in the conventional method,
Although the adhesion was said to be poor, according to the method of the present invention,
Even when these particles are used, it is possible to form a high quality composite plating film having good adhesion.

【0018】[0018]

【実施例】以下、本発明の複合メッキ皮膜の形成方法を
具体化した一実施例を図面を参照して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment embodying the method for forming a composite plating film of the present invention will be described below with reference to the drawings.

【0019】本実施例のメッキ皮膜の形成方法によって
形成される傾斜組成の複合メッキ皮膜の断面図を図1に
示す。図1に示すように、基材1上に形成された一層の
複合メッキ皮膜2中には、粒子3が、メッキ皮膜の表面
に向かって徐々に含有量が少なくなるような、いわゆる
傾斜組成状に分散されている。
FIG. 1 shows a sectional view of a composite plating film having a gradient composition formed by the method for forming a plating film of this embodiment. As shown in FIG. 1, in a single-layer composite plating film 2 formed on a base material 1, a so-called gradient composition state in which the content of particles 3 gradually decreases toward the surface of the plating film is obtained. Are distributed in.

【0020】複合メッキ皮膜2には、一般にニッケルメ
ッキが用いられる。粒子3には、その用途により多種多
様なものが使用されるが、一般に耐摩耗性向上を目的と
して炭化珪素(以下、SiCとする)、窒化珪素(Si
34)、酸化アルミニウム(Al23)及びダイヤモン
ド等が用いられ、滑り性向上を目的として、PTFE、
二硫化モリブデン(MoS2)、窒化ホウ素(BN)及
びフッ化黒鉛((CF)n)等が用いられる。
Nickel plating is generally used for the composite plating film 2. A wide variety of particles are used as the particles 3 depending on the application, but in general, silicon carbide (hereinafter referred to as SiC), silicon nitride (Si) for the purpose of improving wear resistance.
3 N 4 ), aluminum oxide (Al 2 O 3 ), diamond, etc. are used, and in order to improve slipperiness, PTFE,
Molybdenum disulfide (MoS 2 ), boron nitride (BN), graphite fluoride ((CF) n ) and the like are used.

【0021】この複合メッキ皮膜2は、例えば、軸及び
軸受に耐摩耗性を付与することを目的として、SiC粒
子を複合分散させた場合、皮膜全体に一様に粒子を分散
させただけでは摺動面の摩擦力が大きくなりすぎて良好
な摺動状態が得られない。そこで、予めメッキ皮膜が深
くなるに従ってSiC粒子の含有量が高くなるような傾
斜組成を付与しておくことで、運転開始時の初期摩耗段
階での軸・軸受相互間の摩擦係数を低減し、摺動部材の
馴染みを改善すると共に、初期摩耗後の耐摩耗性を確保
する効果を有するものである。
This composite plating film 2 has a composition in which SiC particles are compound-dispersed for the purpose of imparting wear resistance to a shaft and a bearing, for example, by simply dispersing the particles uniformly throughout the film. The frictional force on the moving surface becomes too large and a good sliding state cannot be obtained. Therefore, by providing a gradient composition such that the content of SiC particles becomes higher as the plating film becomes deeper in advance, the friction coefficient between the shaft and the bearing at the initial wear stage at the start of operation is reduced, It has the effects of improving the familiarity of the sliding member and ensuring wear resistance after initial wear.

【0022】次に、上述したような複合メッキ皮膜の形
成方法について図2及び図3を用いて説明する。
Next, a method of forming the composite plating film as described above will be described with reference to FIGS.

【0023】本実施例の複合メッキ皮膜の形成方法を図
2に示す。尚、本実施例においては、ニッケルを成分と
するメッキ皮膜中に、例えば粒子3としてSiC粒子を
分散させた複合メッキ皮膜2を形成する場合を例として
説明する。
The method of forming the composite plating film of this embodiment is shown in FIG. In the present embodiment, a case will be described as an example in which the composite plating film 2 in which, for example, SiC particles are dispersed as the particles 3 is formed in the plating film containing nickel.

【0024】スルファミン酸ニッケルを主成分とするメ
ッキ浴4中に、SiCの粒子3が所定の分散濃度で一様
に分散されている。そして、そのメッキ浴4中に陽極5
と被メッキ物である基材1(陰極)が配置され、これら
は直流電源6に接続されている。また、メッキ浴4の底
面には、メッキ浴4中の粒子分散を均一にするために攪
拌装置7が設けられている。この攪拌装置7によってメ
ッキ浴中の粒子は均一に分散されているので、メッキ浴
4を安定した状態に保つことができる。
SiC particles 3 are uniformly dispersed at a predetermined dispersion concentration in a plating bath 4 containing nickel sulfamate as a main component. And the anode 5 in the plating bath 4
And a substrate 1 (cathode) which is an object to be plated are arranged, and these are connected to a DC power supply 6. Further, a stirrer 7 is provided on the bottom surface of the plating bath 4 in order to uniformly disperse the particles in the plating bath 4. Since the particles in the plating bath are uniformly dispersed by the stirring device 7, the plating bath 4 can be kept in a stable state.

【0025】上記のような装置を用い、スルファミン酸
ニッケルメッキ浴4のメッキ液の温度を40〜60℃
に、両極に印加する電流の電流密度を0.5〜10A/
dm2に変化させ、その際のSiC粒子3の含有量につ
いて調べた結果を図3(a),(b)に示す。尚、メッ
キ浴4のpH=4.0、SiC粒子3の分散濃度は80
g/l、SiC粒子3の平均粒径=0.45μmとし
た。
Using the apparatus as described above, the temperature of the plating solution in the nickel sulfamate plating bath 4 is 40 to 60 ° C.
And the current density of the current applied to both electrodes is 0.5 to 10 A /
The results of investigating the content of the SiC particles 3 at that time after changing to dm 2 are shown in FIGS. The plating bath 4 had a pH of 4.0 and the SiC particles 3 had a dispersed concentration of 80.
g / l, and the average particle size of the SiC particles 3 = 0.45 μm.

【0026】図3(a)に、メッキ浴4の液温とSiC
粒子3の含有量との関係を示す。図3より、スルファミ
ン酸ニッケルメッキ浴4の適正使用温度範囲である40
から60℃では液温が上昇するにつれ、SiC粒子3の
含有量が1〜5wt.%程度まで上昇することがわか
る。
FIG. 3 (a) shows the temperature of the plating bath 4 and SiC.
The relationship with the content of the particles 3 is shown. From FIG. 3, it can be seen that the nickel sulfamate plating bath 4 has an appropriate operating temperature range of 40.
From 60 ° C. to 60 ° C., as the liquid temperature rises, the content of SiC particles 3 becomes 1 to 5 wt. It can be seen that it rises to about%.

【0027】また、図3(b)に、前記両極に印加する
電流の電流密度とSiC粒子3の含有量との関係を示
す。図3(b)より、両極に印加する電流の電流密度を
0.5から10A/dm2 まで上昇させると、SiC粒
子3の含有量は、逆に5〜0.5wt.%程度まで低下
することがわかる。尚、前記適正使用温度範囲及び電流
密度は、使用するメッキ液の種類、粒子3の種類によっ
て適宜設定されるものである。
FIG. 3B shows the relationship between the current density of the current applied to both electrodes and the content of the SiC particles 3. From FIG. 3B, when the current density of the current applied to both electrodes is increased from 0.5 to 10 A / dm 2 , the content of the SiC particles 3 is 5 to 0.5 wt. It can be seen that the value drops to about%. The appropriate operating temperature range and the current density are appropriately set depending on the type of plating liquid used and the type of particles 3.

【0028】図3の結果より、メッキ浴4の液温を60
℃から40℃へ連続的に冷却させると共に、両極に印加
する電流の電流密度を0.5A/dm2から10A/d
2へ連続的に上昇させることによって、表層に向かっ
て徐々にSiC粒子3の含有量が低くなるような傾斜組
成の複合メッキ皮膜2を形成することができる。
From the result of FIG. 3, the liquid temperature of the plating bath 4 was set to 60.
While continuously cooling from 40 ° C to 40 ° C, the current density of the current applied to both electrodes is 0.5 A / dm 2 to 10 A / d.
By continuously increasing the m 2 to m 2 , it is possible to form the composite plating film 2 having a graded composition in which the content of the SiC particles 3 gradually decreases toward the surface layer.

【0029】逆に、メッキ浴4の液温を40℃から60
℃へ連続的に上昇させると共に、両極に印加する電流の
電流密度を10A/dm2から0.5A/dm2へ連続的
に下降させることによって、表層に向かって徐々にSi
C粒子3の含有量が高くなるような傾斜組成の複合メッ
キ皮膜2を形成することができる。
On the contrary, the liquid temperature of the plating bath 4 is changed from 40 ° C to 60 ° C.
By continuously increasing the temperature to 10 ° C. and decreasing the current density of the current applied to both electrodes from 10 A / dm 2 to 0.5 A / dm 2 , the Si gradually increases toward the surface layer.
It is possible to form the composite plating film 2 having a gradient composition such that the content of the C particles 3 becomes high.

【0030】このように、本実施例の複合メッキ皮膜の
形成方法によれば、従来の方法のように、複数のメッキ
浴4を用いて、メッキ作業を何度も繰り返す必要がな
く、一度の作業で済むため、作業性が極めて向上すると
共に、傾斜組成の連続性にも優れた複合メッキ皮膜を形
成することができる。さらに、メッキ浴4の液温及び両
極に印加する電流の電流密度を多様に制御することによ
り、複雑な含有量組成の複合メッキ皮膜を容易に作成す
ることが可能である。
As described above, according to the method for forming the composite plating film of the present embodiment, unlike the conventional method, it is not necessary to repeat the plating operation by using a plurality of plating baths 4, and it is possible to perform a single plating operation. Since the work is sufficient, the workability is extremely improved, and the composite plating film excellent in the continuity of the gradient composition can be formed. Further, by controlling variously the liquid temperature of the plating bath 4 and the current density of the current applied to both electrodes, it is possible to easily prepare a composite plating film having a complicated content composition.

【0031】また、上記の方法によって形成される複合
メッキ皮膜2は、一層のメッキ皮膜中でそのメッキ皮膜
の膜厚方向に対してSiC粒子3の含有量が異なってお
り、従来の方法によって形成される複合メッキ皮膜のよ
うに複数層から構成されていないので、密着性に優れ、
剥離等が生じにくい。
Further, the composite plating film 2 formed by the above method has a different content of the SiC particles 3 in the thickness direction of the plating film in one layer of the plating film, and is formed by the conventional method. Since it is not composed of multiple layers like the composite plating film,
Peeling is less likely to occur.

【0032】また、本実施例においては、粒子3にSi
Cを用いた場合について記述したが、先にも述べたとお
り、この他にも目的に応じて多種多様の粒子が選定でき
る。その中でも、PTFEを含有させた複合メッキ皮膜
を形成する場合、本実施例の形成方法は極めて有効であ
る。つまり、従来の形成方法では、基材のメッキ浴内外
への出し入れを頻繁に行う必要があるが、PTFEを含
有させたメッキ皮膜の場合、メッキ浴中の基材を一度浴
外に出した後で再び浴中に戻してメッキ皮膜を形成する
と、その優れた撥水性のために再メッキ皮膜の密着性が
悪く、剥離等がしばしば発生していた。一方、本実施例
の形成方法では、メッキ作業中に基材を一度も浴外に出
すことなく実施できるため、先に述べた密着不良は発生
せず、非常に良好な、品質の良い傾斜組成複合メッキ皮
膜を形成することができる。
In the present embodiment, the particles 3 are made of Si.
Although the case where C is used has been described, as described above, a wide variety of particles can be selected according to the purpose in addition to this. Among them, the forming method of the present embodiment is extremely effective when forming a composite plating film containing PTFE. In other words, in the conventional forming method, it is necessary to frequently move the base material in and out of the plating bath, but in the case of a plating film containing PTFE, after the base material in the plating bath is once taken out of the bath. When it was returned to the bath again to form a plating film, the re-plating film had poor adhesion due to its excellent water repellency, and peeling and the like often occurred. On the other hand, in the forming method of the present embodiment, since the substrate can be carried out during the plating operation without being taken out of the bath even once, the above-mentioned poor adhesion does not occur, and a very good, high-quality graded composition is obtained. A composite plating film can be formed.

【0033】尚、本実施例においては、メッキ浴にスル
ファミン酸ニッケル浴を用いたが、この他にもニッケル
メッキ浴ではワット浴等も十分使用可能である。また、
ニッケルメッキに限らず銅メッキ、クロムメッキ、亜鉛
メッキ等のメッキ皮膜に各種粒子を含有させることも可
能である。
In this embodiment, the nickel sulfamate bath was used as the plating bath, but a Watts bath or the like can also be sufficiently used as the nickel plating bath. Also,
Not only nickel plating but also copper plating, chromium plating, zinc plating and the like may contain various particles.

【0034】[0034]

【発明の効果】以上説明したことから明かなように、本
発明の傾斜組成複合メッキ皮膜によれば、一層のメッキ
皮膜で構成され、そのメッキ皮膜の膜厚方向に対して前
記粒子の含有量が異なっているので、従来のように、粒
子の含有量を異ならせたメッキ皮膜を複数層重ねること
により形成した傾斜組成複合メッキ皮膜よりも密着性に
優れ、剥離等が生じにくい。
As is apparent from the above description, according to the gradient composition composite plating film of the present invention, it is composed of one layer of the plating film, and the content of the particles in the thickness direction of the plating film. Are different from each other, the adhesiveness is superior to the conventional gradient composition composite plating film formed by stacking a plurality of plating films having different particle contents, and peeling is less likely to occur.

【0035】また、本発明の傾斜組成複合メッキ皮膜の
形成方法によれば、粒子が分散された所定濃度のメッキ
浴中に前記基材を浸漬した状態で、そのメッキ浴のメッ
キ液の温度と前記基材に印加する電流の電流密度とを連
続的に制御することにより、メッキ皮膜の膜厚方向に対
して粒子含有量が異なる複合メッキ皮膜を前記基材の表
面に形成するので、簡単な方法で、容易に傾斜組成の複
合メッキ皮膜を形成することができる。そして、メッキ
浴のメッキ液の液温と基材に印加する電流の電流密度と
を多様に制御することにより、複雑な含有量組成の複合
メッキ皮膜を容易に形成することが可能である。
Further, according to the method for forming a gradient composition composite plating film of the present invention, the substrate is immersed in a plating bath having a predetermined concentration in which particles are dispersed, and the temperature of the plating solution in the plating bath is adjusted. By continuously controlling the current density of the current applied to the base material, a composite plating film having different particle contents in the thickness direction of the plating film is formed on the surface of the base material. By the method, a composite plating film having a gradient composition can be easily formed. By controlling the temperature of the plating solution in the plating bath and the current density of the current applied to the substrate in various ways, it is possible to easily form a composite plating film having a complicated content composition.

【0036】さらに、PTFEを含有させた傾斜組成複
合メッキ皮膜を形成する場合、本発明の形成方法によれ
ば、メッキ作業中に基材を一度も浴外に出すことなく実
施できるため、密着性に優れた品質の良い複合メッキ皮
膜を形成することができる。
Further, in the case of forming a gradient composition composite plating film containing PTFE, according to the forming method of the present invention, it is possible to carry out the plating process without exposing the base material to the outside of the bath, so that the adhesion property is improved. It is possible to form an excellent composite plating film of excellent quality.

【図面の簡単な説明】[Brief description of drawings]

【図1】本実施例の傾斜組成複合メッキ皮膜の断面図で
ある。
FIG. 1 is a cross-sectional view of a gradient composition composite plating film of this example.

【図2】本実施例の傾斜組成複合メッキ皮膜の形成方法
の説明図である。
FIG. 2 is an explanatory diagram of a method for forming a gradient composition composite plating film of this embodiment.

【図3】(a) メッキ浴のメッキ液の温度とSiC粒
子の含有量との関係を示す図である。 (b) 電流密度とSiC粒子の含有量との関係を示す
図である。
FIG. 3 (a) is a diagram showing the relationship between the temperature of the plating solution in the plating bath and the content of SiC particles. (B) It is a figure which shows the relationship between a current density and the content of SiC particles.

【図4】従来の傾斜組成複合メッキ皮膜の形成方法の説
明図である。
FIG. 4 is an explanatory view of a conventional method of forming a gradient composition composite plating film.

【図5】従来の形成方法によって得られた傾斜組成複合
メッキ皮膜の断面図である。
FIG. 5 is a cross-sectional view of a gradient composition composite plating film obtained by a conventional forming method.

【符号の説明】[Explanation of symbols]

1 基材 2 傾斜組成複合メッキ皮膜 3 粒子 4 メッキ浴 1 Base Material 2 Gradient Composition Composite Plating Film 3 Particles 4 Plating Bath

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 メッキ皮膜の膜厚方向に対して粒子含有
量を異ならせた複合メッキ皮膜を基材の表面に形成する
複合メッキ皮膜の形成方法であって、 粒子が分散された所定濃度のメッキ浴中に前記基材を浸
漬した状態で、そのメッキ浴のメッキ液の温度と前記基
材に印加する電流の電流密度とを連続的に制御すること
により、メッキ皮膜の膜厚方向に対して粒子含有量が異
なる複合メッキ皮膜を前記基材の表面に形成することを
特徴とする傾斜組成複合メッキ皮膜の形成方法。
1. A method for forming a composite plating film, wherein a composite plating film having different particle contents in the thickness direction of the plating film is formed on the surface of a substrate, the method comprising: By continuously controlling the temperature of the plating solution in the plating bath and the current density of the current applied to the base material while the base material is immersed in the plating bath, And a composite plating film having different particle contents are formed on the surface of the base material.
【請求項2】 前記メッキ浴のメッキ液の温度を所定温
度から徐々に冷却すると共に、前記電流密度を所定値か
ら徐々に上昇させることにより、膜の表層に向かって前
記粒子含有量が低くなる複合メッキ皮膜を形成すること
を特徴とする請求項1に記載の傾斜組成複合メッキ皮膜
の形成方法。
2. The particle content decreases toward the surface layer of the film by gradually cooling the temperature of the plating solution in the plating bath from a predetermined value and gradually increasing the current density from a predetermined value. The method of forming a gradient composition composite plating film according to claim 1, wherein a composite plating film is formed.
【請求項3】 前記メッキ浴のメッキ液の温度を所定温
度から徐々に上昇すると共に、前記電流密度を所定値か
ら徐々に下降させることにより、膜の表層に向かって前
記粒子含有量が高くなる複合メッキ皮膜を形成すること
を特徴とする請求項1に記載の傾斜組成複合メッキ皮膜
の形成方法。
3. The particle content increases toward the surface layer of the film by gradually increasing the temperature of the plating solution in the plating bath from a predetermined temperature and gradually decreasing the current density from a predetermined value. The method of forming a gradient composition composite plating film according to claim 1, wherein a composite plating film is formed.
【請求項4】 前記粒子に、炭化珪素(SiC)、4フ
ッ化エチレン樹脂(PTFE)、もしくはこれらを混合
したものを使用したことを特徴とする請求項1乃至請求
項3のいずれかに記載の傾斜組成複合メッキ皮膜の形成
方法。
4. The particle according to claim 1, wherein silicon carbide (SiC), tetrafluoroethylene resin (PTFE), or a mixture thereof is used for the particles. Method of forming a gradient composition composite plating film of.
JP11991995A 1995-05-18 1995-05-18 Formation of composite plated film having gradient composition Pending JPH08311696A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11991995A JPH08311696A (en) 1995-05-18 1995-05-18 Formation of composite plated film having gradient composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11991995A JPH08311696A (en) 1995-05-18 1995-05-18 Formation of composite plated film having gradient composition

Publications (1)

Publication Number Publication Date
JPH08311696A true JPH08311696A (en) 1996-11-26

Family

ID=14773431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11991995A Pending JPH08311696A (en) 1995-05-18 1995-05-18 Formation of composite plated film having gradient composition

Country Status (1)

Country Link
JP (1) JPH08311696A (en)

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* Cited by examiner, † Cited by third party
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JP2006028603A (en) * 2004-07-16 2006-02-02 Ricoh Co Ltd Mold for molding, mold for molding optical disk substrate, metallic shaft, metallic bearing, and compound metallic material, and method for manufacturing compound metallic material
JP2006169609A (en) * 2004-12-20 2006-06-29 Erugu:Kk Plating solution, method for preparing plating solution, surface treatment method and contact member
WO2011096432A1 (en) * 2010-02-04 2011-08-11 日本精機宝石工業株式会社 Heat sink material
WO2012067202A1 (en) * 2010-11-18 2012-05-24 古河電気工業株式会社 Composite plating material and electrical/electronic component using same
WO2010144145A3 (en) * 2009-06-11 2013-01-17 Modumetal Llc Functionally graded coatings and claddings for corrosion and high temperature protection
CN113445107A (en) * 2021-06-28 2021-09-28 中国石油大学(华东) Ni-PTFE-SiC super-hydrophobic anticorrosive coating and preparation method thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006028603A (en) * 2004-07-16 2006-02-02 Ricoh Co Ltd Mold for molding, mold for molding optical disk substrate, metallic shaft, metallic bearing, and compound metallic material, and method for manufacturing compound metallic material
JP2006169609A (en) * 2004-12-20 2006-06-29 Erugu:Kk Plating solution, method for preparing plating solution, surface treatment method and contact member
WO2010144145A3 (en) * 2009-06-11 2013-01-17 Modumetal Llc Functionally graded coatings and claddings for corrosion and high temperature protection
WO2011096432A1 (en) * 2010-02-04 2011-08-11 日本精機宝石工業株式会社 Heat sink material
JP5006993B2 (en) * 2010-02-04 2012-08-22 日本精機宝石工業株式会社 Heat dissipation material
WO2012067202A1 (en) * 2010-11-18 2012-05-24 古河電気工業株式会社 Composite plating material and electrical/electronic component using same
JP5654015B2 (en) * 2010-11-18 2015-01-14 古河電気工業株式会社 Composite plating materials and electrical / electronic parts using them
CN113445107A (en) * 2021-06-28 2021-09-28 中国石油大学(华东) Ni-PTFE-SiC super-hydrophobic anticorrosive coating and preparation method thereof
CN113445107B (en) * 2021-06-28 2022-05-13 中国石油大学(华东) Ni-PTFE-SiC super-hydrophobic anticorrosive coating and preparation method thereof

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