JPH08306752A - Method for detecting defect in growth of single crystal silicon - Google Patents
Method for detecting defect in growth of single crystal siliconInfo
- Publication number
- JPH08306752A JPH08306752A JP13290995A JP13290995A JPH08306752A JP H08306752 A JPH08306752 A JP H08306752A JP 13290995 A JP13290995 A JP 13290995A JP 13290995 A JP13290995 A JP 13290995A JP H08306752 A JPH08306752 A JP H08306752A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- silicon
- single crystal
- particles
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は単結晶シリコンの成長
欠陥（ｇｒｏｗ−ｉｎ欠陥）の検査方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for inspecting single crystal silicon for growth defects (grow-in defects).
【０００２】[0002]
【従来の技術】単結晶シリコンの成長欠陥としては、Ｃ
ＯＰ（Ｃｒｙｓｔａｌ Ｏｒｉｇｉｎａｔｅｄ Ｐａｒ
ｔｉｃｌｅ）欠陥、酸素折出物（ＳｉＯ2＝赤外散乱
体）等が知られている。これらの成長欠陥の検出方法と
しては、従来、以下の方法が提案されている。すなわ
ち、ＳＣ１洗浄液（ＲＣＡ標準１液＝ＮＨ4ＯＨ／Ｈ2Ｏ
2／Ｈ2Ｏ）を用いてシリコンウェーハの表面を繰り返し
洗浄することにより、エッチピットを拡大化し、これを
パーティクルカウンタ（例えばＳＳ６２００）で検出す
るものである。ＣＯＰはエッチピットであるため、繰り
返し洗浄によって拡大化されて検出される。2. Description of the Related Art C is a growth defect of single crystal silicon.
OP (Crystal Originated Par)
It is known that a single defect, an oxygen protrusion (SiO 2 = infrared scatterer), and the like are known. The following methods have been conventionally proposed as methods for detecting these growth defects. That is, SC1 cleaning liquid (RCA standard liquid 1 = NH 4 OH / H 2 O
2 / H 2 O) is used to repeatedly clean the surface of the silicon wafer to enlarge the etch pits, which are detected by a particle counter (eg SS6200). Since the COP is an etch pit, it is enlarged and detected by repeated cleaning.
【０００３】[0003]
【発明が解決しようとする課題】ところが、ＣＯＰとは
別の欠陥である酸素折出物（赤外散乱体）は、このＳＣ
１液での繰り返し洗浄でも検出することは困難であっ
た。酸素析出物（ＳｉＯ2）はその大きさが５０〜７０
ｎｍ以下で、ＳＣ１液での洗浄では酸化物（ＳｉＯ2）
はＳｉよりエッチレートが低いため、ピットにはならず
突起になると考えられるからである。図５にはこれらの
ＣＯＰおよび酸素析出物の分布を示している。また、図
６にはこの繰り返し洗浄での酸素析出物の状態を模式的
に示している。However, oxygen defect (infrared scatterer), which is a defect different from COP, is
It was difficult to detect even with repeated washing with one solution. The size of the oxygen precipitate (SiO 2 ) is 50 to 70.
nm or less, oxide (SiO 2 ) when washed with SC1 liquid
Since the etching rate is lower than that of Si, it is considered that it does not become a pit but becomes a protrusion. FIG. 5 shows the distribution of these COPs and oxygen precipitates. Further, FIG. 6 schematically shows the state of oxygen precipitates in this repeated cleaning.
【０００４】そこで、この発明は、シリコン成長欠陥の
一つである酸素析出物を検出する方法を提供すること
を、その目的としている。同時に、この発明は、ＣＯＰ
の検出を行うことを、その目的としている。Therefore, an object of the present invention is to provide a method for detecting an oxygen precipitate which is one of silicon growth defects. At the same time, this invention is
The purpose is to detect.
【０００５】[0005]
【課題を解決するための手段】請求項１に記載の発明
は、単一のシリコン単結晶棒から同一条件で作製した複
数のシリコンウェーハを準備する工程と、このシリコン
ウェーハの内の一つについてＨＦ洗浄後ＳＣ１洗浄し、
そのシリコンウェーハ表面の所定大きさのパーティクル
のカウント値を得る第１の工程と、上記シリコンウェー
ハの内の別の一つをＨＦ洗浄を行わずに上記第１の工程
と同一条件でＳＣ１洗浄し、そのシリコンウェーハ表面
の同一大きさのパーティクルのカウント値を得る第２の
工程と、これらの第１および第２の工程での各カウント
値の差を求めることにより、このシリコンウェーハに存
在する酸素析出物の個数を検出する工程とを備えた単結
晶シリコンの成長欠陥の検出方法である。The invention according to claim 1 relates to a step of preparing a plurality of silicon wafers produced from a single silicon single crystal ingot under the same conditions, and one of the silicon wafers. After HF cleaning, SC1 cleaning,
The first step of obtaining a count value of particles of a predetermined size on the surface of the silicon wafer, and another one of the silicon wafers is SC1 cleaned under the same conditions as the first step without performing HF cleaning. , The oxygen existing in the silicon wafer by obtaining the count value of the particles of the same size on the surface of the silicon wafer and the difference between the count values in the first and second steps. And a step of detecting the number of precipitates, which is a method for detecting a growth defect of single crystal silicon.
【０００６】請求項２に記載の発明は、上記第１および
第２の工程でのＳＣ１洗浄は複数回行う請求項１に記載
の単結晶シリコンの成長欠陥の検出方法である。The invention according to claim 2 is the method for detecting a growth defect of single crystal silicon according to claim 1, wherein the SC1 cleaning in the first and second steps is performed a plurality of times.
【０００７】[0007]
【作用】請求項１に記載の発明では、ＨＦ洗浄後ＳＣ１
洗浄したサンプルウェーハのパーティクルのカウント値
と、ＨＦ洗浄を行わずに同一条件でのＳＣ１洗浄したサ
ンプルウェーハのパーティクルのカウント値との差を求
めることにより、ウェーハ表面に存在する酸素析出物の
個数を検出する。ＨＦ洗浄により、シリコンウェーハ表
面の酸素析出物を溶解し、ピット（小穴）を残すもので
ある。このピットはＳＣ１洗浄により拡大化することが
でき、例えばパーティクルカウンタでカウントすること
ができる。ＨＦ洗浄でのカウント値はＣＯＰおよび酸素
析出物のカウント値を含み、ＨＦ洗浄なしのそれはＣＯ
Ｐのみのカウント値を示しているからである。In the invention described in claim 1, SC1 after HF cleaning
By determining the difference between the count value of particles of the cleaned sample wafer and the count value of particles of the sample wafer SC1 cleaned under the same conditions without performing HF cleaning, the number of oxygen precipitates existing on the wafer surface can be determined. To detect. The HF cleaning dissolves oxygen precipitates on the surface of the silicon wafer, leaving pits (small holes). This pit can be enlarged by SC1 cleaning, and can be counted by, for example, a particle counter. The count value with HF cleaning includes COP and oxygen precipitate count values, and that without HF cleaning is
This is because the count value of only P is shown.
【０００８】請求項２に記載の発明では、上記ＳＣ１洗
浄を複数回繰り返す。この結果、微小サイズの酸素析出
物をも検出することができる。According to the second aspect of the invention, the SC1 cleaning is repeated a plurality of times. As a result, even minute oxygen precipitates can be detected.
【０００９】[0009]
【実施例】以下この発明の実施例を図面を参照して説明
する。図１はこの発明の一実施例に係る成長欠陥の検出
方法を示すフローチャートである。図２・図３は同じく
その検出方法を説明するための模式図である。図４は一
実施例に係るＨＦ洗浄の有無による酸素析出物の算出結
果を示すためのグラフである。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a flowchart showing a method of detecting a growth defect according to an embodiment of the present invention. 2 and 3 are schematic diagrams for explaining the detection method. FIG. 4 is a graph showing calculation results of oxygen precipitates with and without HF cleaning according to an example.
【００１０】図１に示すように、この成長欠陥の検出方
法では、まず単一のシリコン単結晶棒から同一条件で作
製した複数のシリコンウェーハを準備する（Ｓ１）。こ
の単結晶棒としてはＣＺ法で引き上げたものを使用す
る。スライス、鏡面研磨等の条件は同じとして少なくと
も２種類のシリコンウェーハＡ，Ｂを準備する。次い
で、このサンプルウェーハＡ，Ｂについてパーティクル
カウンタＳＳ６２００を使用してパーティクル数をカウ
ントする（Ｓ２）。これは、初期が全く同じであること
を確認するためである。そして、ウェーハＡのみをＨＦ
洗浄する（Ｓ３）。洗浄条件は０．５〜５％ＨＦ，室
温，３０分間とする。As shown in FIG. 1, in this method of detecting a growth defect, first, a plurality of silicon wafers prepared from a single silicon single crystal ingot under the same conditions are prepared (S1). As this single crystal rod, one pulled by the CZ method is used. At least two types of silicon wafers A and B are prepared under the same conditions such as slicing and mirror polishing. Next, the number of particles of the sample wafers A and B is counted using the particle counter SS6200 (S2). This is to make sure that the initials are exactly the same. Then, only the wafer A is HF
Wash (S3). The washing conditions are 0.5 to 5% HF, room temperature, and 30 minutes.
【００１１】さらに、これらのサンプルウェーハＡ，Ｂ
についてＳＣ１液での洗浄を施す（Ｓ４）。このＳＣ１
洗浄は、例えば（ＮＨ4ＯＨ：Ｈ2Ｏ2:Ｈ2Ｏ＝１：１：
５）のＳＣ１液を用い、８５℃、４０分間行う。繰り返
してこの洗浄を行ってもよい。そして、この洗浄後のウ
ェーハＡ，Ｂのそれぞれについてその表面の所定大きさ
のパーティクルのカウント値を得る（Ｓ５）。ＳＣ１液
での繰り返し洗浄後のシリコンウェーハ表面のピット数
を検出するものである。このエッチピットにはＣＯＰに
よるものの他、酸素析出物が溶けて形成されたものを含
んでいる。次に、これらの各カウント値の差を求める
（Ｓ６）。この結果、このシリコン単結晶棒について存
在する酸素析出物の個数を検出することができる。図４
にはパーティクルカウンタによる測定値の分布を示す。
よって、図中斜線部分が酸素析出物を示す。Further, these sample wafers A and B
Is washed with the SC1 liquid (S4). This SC1
The washing is performed, for example, with (NH 4 OH: H 2 O 2: H 2 O = 1: 1: 1
Using SC1 solution of 5), it is carried out at 85 ° C. for 40 minutes. This washing may be repeated. Then, for each of the cleaned wafers A and B, the count value of particles having a predetermined size on the surface thereof is obtained (S5). The number of pits on the surface of the silicon wafer after repeated cleaning with the SC1 liquid is detected. The etch pits include those formed by melting oxygen precipitates as well as those formed by COP. Next, the difference between these count values is obtained (S6). As a result, the number of oxygen precipitates existing in this silicon single crystal ingot can be detected. FIG.
Shows the distribution of the measured values by the particle counter.
Therefore, the shaded area in the figure indicates oxygen precipitates.
【００１２】図２はサンプルウェーハＡでの表面状態
を、図３はサンプルウェーハＢのそれを示している。こ
れらの図に示すように、ＨＦ洗浄により酸素析出物（Ｓ
ｉＯ2）は溶けてピットを形成する。なお、このＨＦ洗
浄ではＣＯＰのピットは拡大されない。また、複数回の
繰り返しＳＣ１洗浄では小さなピットを拡大化すること
ができる。FIG. 2 shows the surface condition of the sample wafer A, and FIG. 3 shows that of the sample wafer B. As shown in these figures, oxygen precipitates (S
iO 2 ) melts to form pits. The pits of COP are not enlarged by this HF cleaning. In addition, a small pit can be enlarged by repeating SC1 cleaning a plurality of times.
【００１３】[0013]
【発明の効果】この発明によれば、単結晶シリコン中の
酸素析出物を容易にかつ正確に検出することができる。
また、ＣＯＰを同時に検出することもできる。According to the present invention, oxygen precipitates in single crystal silicon can be easily and accurately detected.
It is also possible to detect COP at the same time.
【図１】この発明の一実施例に係る検出方法を示すフロ
ーチャートである。FIG. 1 is a flowchart showing a detection method according to an embodiment of the present invention.
【図２】この発明の一実施例に係る検出方法を説明する
ための模式図である。FIG. 2 is a schematic diagram for explaining a detection method according to an embodiment of the present invention.
【図３】この発明の一実施例に係る検出方法を説明する
ための模式図である。FIG. 3 is a schematic diagram for explaining a detection method according to an embodiment of the present invention.
【図４】この発明の一実施例に係るパーティクル測定結
果を示すグラフである。FIG. 4 is a graph showing a particle measurement result according to an example of the present invention.
【図５】従来のパーティクルカウンタでの測定結果を示
すグラフである。FIG. 5 is a graph showing a measurement result of a conventional particle counter.
【図６】従来の検出方法を説明するための模式図であ
る。FIG. 6 is a schematic diagram for explaining a conventional detection method.
Claims (2)
作製した複数のシリコンウェーハを準備する工程と、 このシリコンウェーハの内の一つについてＨＦ洗浄後Ｓ
Ｃ１洗浄し、そのシリコンウェーハ表面の所定大きさの
パーティクルのカウント値を得る第１の工程と、 上記シリコンウェーハの内の別の一つをＨＦ洗浄を行わ
ずに上記第１の工程と同一条件でＳＣ１洗浄し、そのシ
リコンウェーハ表面の同一大きさのパーティクルのカウ
ント値を得る第２の工程と、 これらの第１および第２の工程での各カウント値の差を
求めることにより、このシリコンウェーハに存在する酸
素析出物の個数を検出する工程とを備えた単結晶シリコ
ンの成長欠陥の検出方法。1. A step of preparing a plurality of silicon wafers manufactured under the same conditions from a single silicon single crystal ingot, and S after HF cleaning of one of the silicon wafers.
C1 cleaning to obtain a count value of particles of a predetermined size on the surface of the silicon wafer, and another one of the silicon wafers under the same conditions as the first step without performing HF cleaning. This silicon wafer is obtained by performing a SC1 cleaning with the second step to obtain the count value of particles of the same size on the surface of the silicon wafer and the difference between the count values in the first and second steps. Detecting the number of oxygen precipitates present in the single crystal silicon.
浄は複数回行う請求項１に記載の単結晶シリコンの成長
欠陥の検出方法。2. The method for detecting a growth defect of single crystal silicon according to claim 1, wherein the SC1 cleaning in the first and second steps is performed a plurality of times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13290995A JP2951869B2 (en) | 1995-05-01 | 1995-05-01 | Method for detecting growth defects in single crystal silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13290995A JP2951869B2 (en) | 1995-05-01 | 1995-05-01 | Method for detecting growth defects in single crystal silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08306752A true JPH08306752A (en) | 1996-11-22 |
| JP2951869B2 JP2951869B2 (en) | 1999-09-20 |
Family
ID=15092367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13290995A Expired - Fee Related JP2951869B2 (en) | 1995-05-01 | 1995-05-01 | Method for detecting growth defects in single crystal silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2951869B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999039380A1 (en) * | 1998-02-02 | 1999-08-05 | Nippon Steel Corporation | Soi substrate and method for manufacturing the same |
| US6936484B2 (en) | 1998-10-16 | 2005-08-30 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method of manufacturing semiconductor device and semiconductor device |
| CN100447559C (en) * | 2006-02-17 | 2008-12-31 | 无锡乐东微电子有限公司 | Method for detecting surface COP of silicon sheet using Cu inducing |
-
1995
- 1995-05-01 JP JP13290995A patent/JP2951869B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999039380A1 (en) * | 1998-02-02 | 1999-08-05 | Nippon Steel Corporation | Soi substrate and method for manufacturing the same |
| US6617034B1 (en) | 1998-02-02 | 2003-09-09 | Nippon Steel Corporation | SOI substrate and method for production thereof |
| US6936484B2 (en) | 1998-10-16 | 2005-08-30 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method of manufacturing semiconductor device and semiconductor device |
| CN100447559C (en) * | 2006-02-17 | 2008-12-31 | 无锡乐东微电子有限公司 | Method for detecting surface COP of silicon sheet using Cu inducing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2951869B2 (en) | 1999-09-20 |
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