CN109727887A - The monitoring method of the crystal edge defect of wafer - Google Patents
The monitoring method of the crystal edge defect of wafer Download PDFInfo
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- CN109727887A CN109727887A CN201811632588.7A CN201811632588A CN109727887A CN 109727887 A CN109727887 A CN 109727887A CN 201811632588 A CN201811632588 A CN 201811632588A CN 109727887 A CN109727887 A CN 109727887A
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- wafer
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- edge defect
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Abstract
The invention discloses a kind of monitoring methods of the crystal edge defect of wafer, comprising steps of Step 1: the scanned photograph for collecting the crystal edge defect of the wafer of Known Species digitizes the characteristic parameter to be formed and the characteristic parameter of various crystal edge defects is added in defect database；Step 2: carrying out the scanning at edge to monitored wafer and taking pictures and form scanned photograph；Step 3: going forward side by side from the various crystal edge defects that the scanned photograph of monitored wafer chooses appearance digitized and obtains corresponding characteristic parameter；Step 4: the characteristic parameter in the characteristic parameter and defect database of the corresponding various crystal edge defects of monitored wafer is carried out subtractive, the type of the corresponding various crystal edge defects of monitored wafer is determined according to subtractive value.The present invention can realize real time monitoring comprehensively to various known and emerging unknown defect, eliminate the monitoring blind spot to unknown defect and eliminate the influence by monitoring blind spot bring to product, promote the quality of product.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit manufacture methods, more particularly to a kind of prison of the crystal edge defect of wafer
Prosecutor method.
Background technique
Semiconductor integrated circuit is usually formed on wafer, and wafer is generally the wafer of silicon substrate, as technology develops,
Size, that is, diameter of wafer goes so far as 12 inches from 4 inches, 6 inches, 8 inches, in the production of wafer such as 12 inch wafers
In the process, with the continuous reduction of processing procedure and continuing to optimize for technique, the crystal edge of more New raxas during this each step process
Defect will generate therewith, the defect of the edge of crystal edge defect namely wafer, and crystal edge defect such as film separation etc. is once in technique
It is fallen in active parts in the process and will cause the loss of yield, the chip inside active parts, that is, wafer edge is formed
The device in region, the device at crystal round fringes can be finally removed.Therefore it must be set up a kind of online effective crystal edge defect prison
Prosecutor method.However, the difference and film due to different process photoetching side washing distance grow increasing for level, in addition different process mistake
Touching different degrees of between crystal edge and board component in journey will lead to wafer crystal edge and there is very big make an uproar during defect measures
Sound.
In the prior art, to the monitor mode of wafer crystal edge defect are as follows: be scanned i.e. progress crystal edge to crystal round fringes and sweep
It retouches to obtain crystal edge photo, usually crystal round fringes is scanned by defect checking machine platform, needed for being selected in gained photo
Special Category defect, by parameter selection and constantly adjustment, establish for this feature type defect crystal edge scan formula,
It after crystal edge scans formula foundation, can be achieved with that this Special Category defect namely known defect is constantly monitored online.
In existing method, the defect of each type will establish corresponding crystal edge scanning formula, without corresponding crystal edge
The defect of scanning formula not can be carried out on-line monitoring, and there are directionality for current crystal edge monitoring method, that is, be only capable of for known
Defect is monitored, however for the crystal edge defect of unknown New raxa, existing monitor mode can not be found in first time,
There are certain delays in terms of timeliness.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of monitoring method of the crystal edge defect of wafer, can to it is various
Know and realize real time monitoring comprehensively with emerging unknown defect, eliminate the monitoring blind spot to unknown defect and eliminates blind by monitoring
Influence of the point bring to product, promotes the quality of product.
In order to solve the above technical problems, the monitoring method of the crystal edge defect of wafer provided by the invention includes the following steps:
Step 1: collecting the characteristic parameter of the crystal edge defect of the wafer of Known Species, the characteristic parameter passes through to corresponding
The wafer edge crystal edge defect be scanned take pictures and to the photo of the crystal edge defect in scanned photograph carry out
Digitlization is formed, and the characteristic parameter of the crystal edge defect of known all kinds is added in defect database.
Step 2: carrying out the scanning at edge to monitored wafer and taking pictures and form scanned photograph.
Step 3: choosing the various crystal edge defects of appearance from the scanned photograph of the monitored wafer, various crystal edges are lacked
Sunken photo is digitized and obtains corresponding characteristic parameter.
Step 4: in the characteristic parameter and the defect database of the corresponding various crystal edge defects of the monitored wafer
The characteristic parameter of various crystal edge defects carries out subtractive, determines that the corresponding various crystal edges of the monitored wafer are lacked according to subtractive value
Sunken type.
A further improvement is that in step 4, if one of corresponding each crystal edge defect of monitored wafer crystalline substance
The subtractive value of the characteristic parameter of one of the characteristic parameter of side defect and the defect database crystal edge defect be less than or equal to than
Compared with threshold value, then determine that the type of the corresponding crystal edge defect of the monitored wafer is Known Species.
A further improvement is that in step 4, if one of corresponding each crystal edge defect of monitored wafer crystalline substance
The subtractive value of the characteristic parameter of the crystal edge defect of the characteristic parameter of side defect and all kinds in the defect database is all big
In comparing threshold value, then determine that the type of the corresponding crystal edge defect of the monitored wafer is New raxa.
A further improvement is that the characteristic parameter of the crystal edge defect of the corresponding New raxa of the monitored wafer is added to
In the defect database.
A further improvement is that it includes 6 inches, 8 inches and 12 inches or more that the wafer, which is diameter,.
A further improvement is that the crystal edge defect includes the defect that film separation is formed.
A further improvement is that the film type of the corresponding peeling of the crystal edge defect includes: deielectric-coating, metal film, light
Photoresist.
A further improvement is that including top surface, side and the bottom to the edge of the monitored wafer in step 2
Portion surface is scanned respectively.
A further improvement is that the characteristic parameter of the crystal edge defect includes shape, area and bright spot.
A further improvement is that after being digitized to the photo of the crystal edge defect, it is also necessary to carry out a local left side
Right subtractive realizes background reduction.
A further improvement is that being chip forming region inside the edge of the wafer.
A further improvement is that when detected in step 4 the crystal edge defect and the crystal edge defect quantity be greater than etc.
When required value, then the monitored wafer is cleaned to remove the crystal edge defect.
When the quantity for detecting the crystal edge defect and the crystal edge defect in step 4 is less than required value, then the quilt
It monitors wafer and carries out next step process.
A further improvement is that when detected in step 4 the crystal edge defect and the crystal edge defect quantity be greater than etc.
When required value, also need to check the corresponding board of previous step technique of the monitored wafer.
A further improvement is that the monitored wafer is product wafer.
A further improvement is that carrying out the edge to the corresponding wafer by using defect checking machine platform in step 1
Crystal edge defect be scanned and take pictures.
The scanning at edge is carried out to monitored wafer using the defect checking machine platform in step 2 and is taken pictures.
The present invention collects the characteristic parameter of the crystal edge defect of various Known Species first and forms defect database, these are special
Levying parameter is all to carry out digitlization formation by the photo of the crystal edge defect to various Known Species, in this way in subsequent monitoring
It does not need to sweep monitoring wafer using formula is scanned for the corresponding crystal edge of a certain or several known crystal edge defects
It retouches, but a kind of general or known crystal edge scanning formula is used to carry out boundary scan to monitored wafer, later, to sweeping
It retouches photo to carry out digital conversion and obtain corresponding characteristic parameter, by carrying out subtractive meter with the characteristic parameter in defect database
Calculating and comparing can determine crystal edge defect kind possessed by monitored wafer, either known crystal edge defect or unknown crystalline substance
Side defect can determine；For new unknown crystal edge defect, also obtained characteristic parameter can be added to defect database in time
In；Thus it is possible to realize real time monitoring comprehensively to various known and emerging unknown defect, eliminate blind to the monitoring of unknown defect
The influence of point and elimination by monitoring blind spot bring to product, promotes the quality of product.
In addition, in the prior art, a kind of crystal edge scanning formula is only capable of examining the crystal edge defect of corresponding Known Species
It surveys, different crystal edge defects needs to compare using different crystal edge scanning formulas with the oriented detection of the prior art, and the present invention is logical
It crosses single pass and can be realized and various types of crystal edge defects are detected, do not need to carry out for the crystal edge defect of New raxa
The parameter adjustment that crystal edge scans formula reduces testing cost so the present invention can also improve testing efficiency.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:
Fig. 1 is the flow chart of the monitoring method of the crystal edge defect of wafer of the embodiment of the present invention；
Fig. 2 is the schematic diagram being scanned in present invention method to wafer；
Fig. 3 is the schematic diagram for carrying out digitized processing in present invention method to crystal edge defect.
Specific embodiment
As shown in Figure 1, being the flow chart of the monitoring method of the crystal edge defect 1 of wafer of the embodiment of the present invention 101, the present invention is real
The monitoring method for applying the crystal edge defect 1 of a wafer 101 includes the following steps:
Step 1: collect Known Species wafer 101 crystal edge defect 1 characteristic parameter, the characteristic parameter by pair
The crystal edge defect 1 at the edge of the corresponding wafer 101, which is scanned, takes pictures and to the crystal edge defect 1 in scanned photograph
Photo carries out digitlization formation, and the characteristic parameter of the crystal edge defect 1 of known all kinds is added to defect database
In.
Preferably, by using defect checking machine platform carry out to the crystal edge defect 1 at the edge of the corresponding wafer 101 into
Row scanning is taken pictures.When collecting the characteristic parameter of the crystal edge defect 1 of each Known Species, it can use in pervious test process
Scanned photograph through being formed, individually can also be scanned to take pictures and be acquired, and it is convenient which kind of is seen.
As shown in Fig. 2, being the schematic diagram being scanned in present invention method to wafer 101, in the wafer 101
Circle shown in label 102 be the wafer 101 edge inner ring, the outer ring at the edge be the wafer 101 most
Outer periphery.Being inside the edge of the wafer 101 is chip forming region inside circle 102, the device in chip forming region
It is all useful device, it is desirable that cannot be destroyed by crystal edge defect 1.
The wafer 101 is that diameter includes 6 inches, 8 inches and 12 inches or more.
The crystal edge defect 1 includes the defect that film separation is formed.
The film type of the corresponding peeling of the crystal edge defect 1 includes: deielectric-coating, metal film, photoresist.
The characteristic parameter of the crystal edge defect 1 includes shape, area and bright spot.
After being digitized to the photo of the crystal edge defect 1, it is also necessary to carry out local left and right subtractive and realize background
Reduction.
As shown in figure 3, being the schematic diagram for carrying out digitized processing in present invention method to crystal edge defect 1, label
It is the corresponding scanned photograph of the crystal edge defect 1 in 301 corresponding figures；The corresponding chart of label 302 is shape after being digitized
At each position on digital information, number is related to the feature of corresponding position such as brightness, at the label 201 in chart 302
Corresponding 5 numbers and crystal edge defect 1 are corresponding；Label 303 is the number for formed after background process to the chart in label 302
Word information, background process are formed by the left and right subtractive for carrying out part to the digital information in chart 302, are in chart 303
32 formation are subtracted on the basis of chart 302.
Step 2: carrying out the scanning at edge to monitored wafer 101 and taking pictures and form scanned photograph.
Preferably, the scanning at edge is carried out to monitored wafer 101 using the defect checking machine platform and taken pictures.
Include in step 2 to top surface, side and the bottom surface at the edge of the monitored wafer 101 respectively into
Row scanning.
The monitored wafer 101 is usually product wafer 101.
Step 3: choosing the various crystal edge defects 1 of appearance from the scanned photograph of the monitored wafer 101, to various crystalline substances
The photo of side defect 1 is digitized and obtains corresponding characteristic parameter.
Step 4: the characteristic parameter and the defect database of the corresponding various crystal edge defects 1 of the monitored wafer 101
In the characteristic parameters of various crystal edge defects 1 carry out subtractive, determine that the monitored wafer 101 is corresponding each according to subtractive value
The type of kind crystal edge defect 1.
In the embodiment of the present invention, if one of corresponding each crystal edge defect 1 of the monitored wafer 101 crystal edge defect
The subtractive value of the characteristic parameter of one of 1 characteristic parameter and the defect database crystal edge defect 1 is less than or equal to compare threshold
Value, then determine that the type of the corresponding crystal edge defect 1 of the monitored wafer 101 is Known Species.
In step 4, if the spy of one of corresponding each crystal edge defect 1 of the monitored wafer 101 crystal edge defect 1
The subtractive value of the characteristic parameter of sign parameter and the crystal edge defect 1 of all kinds in the defect database both greater than compares threshold
Value, then determine that the type of the corresponding crystal edge defect 1 of the monitored wafer 101 is New raxa.At this moment, needing will be described monitored
The characteristic parameter of the crystal edge defect 1 of the corresponding New raxa of wafer 101 is added in the defect database.
When the quantity for detecting the crystal edge defect 1 and the crystal edge defect 1 in step 4 is more than or equal to required value, then
The monitored wafer 101 is cleaned to remove the crystal edge defect 1.In general, the quantity of the crystal edge defect 1 is exceeded
When, reason for Exceeding is likely to be as caused by previous step process, therefore is worked as in step 4 and detected the crystal edge defect 1 and the crystalline substance
When the quantity of side defect 1 is more than or equal to required value, also need to the corresponding board of previous step technique of the monitored wafer 101 into
Row checks.
It is when the quantity for detecting the crystal edge defect 1 and the crystal edge defect 1 in step 4 is less than required value, then described
Monitored wafer 101 carries out next step process.
The embodiment of the present invention collects the characteristic parameter of the crystal edge defect 1 of various Known Species first and forms defective data
Library, these characteristic parameters are all to carry out digitlization formation by the photo of the crystal edge defect 1 to various Known Species, in this way rear
It does not need to scan formula using for a certain or corresponding crystal edge of several known crystal edge defects 1 come to monitoring in continuous monitoring
Wafer 101 is scanned, but is used a kind of general or known crystal edge scanning formula to carry out edge to monitored wafer 101 and swept
Retouch, later, digital conversion carried out to scanned photograph and obtains corresponding characteristic parameter, by with the spy in defect database
Sign parameter carries out subtractive calculating and compares to can determine 1 type of crystal edge defect possessed by monitored wafer 101, either known
Crystal edge defect 1 or unknown crystal edge defect 1, can determine；For new unknown crystal edge defect 1, the spy that will can also obtain in time
Sign parameter is added in defect database；Thus it is possible to real time monitoring comprehensively is realized to various known and emerging unknown defect,
It eliminates the monitoring blind spot to unknown defect and eliminates the influence by monitoring blind spot bring to product, promote the quality of product.
In addition, in the prior art, a kind of crystal edge scanning formula is only capable of examining the crystal edge defect 1 of corresponding Known Species
It surveys, different crystal edge defects 1 needs to compare using different crystal edge scanning formulas with the oriented detection of the prior art, the present invention
Embodiment can be realized by single pass and detect to various types of crystal edge defects 1, and the crystalline substance for New raxa is not needed
Side defect 1 carries out the parameter adjustment of crystal edge scanning formula, so the embodiment of the present invention can also improve testing efficiency, reduce test at
This.
The present invention has been described in detail through specific embodiments, but these are not constituted to limit of the invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these are also answered
It is considered as protection scope of the present invention.
Claims (15)
1. a kind of monitoring method of the crystal edge defect of wafer, which comprises the steps of:
Step 1: collecting the characteristic parameter of the crystal edge defect of the wafer of Known Species, the characteristic parameter passes through to corresponding institute
The crystal edge defect for stating the edge of wafer, which is scanned, takes pictures and carries out number to the photo of the crystal edge defect in scanned photograph
Change and formed, the characteristic parameter of the crystal edge defect of known all kinds is added in defect database；
Step 2: carrying out the scanning at edge to monitored wafer and taking pictures and form scanned photograph；
Step 3: choosing the various crystal edge defects of appearance from the scanned photograph of the monitored wafer, to various crystal edge defects
Photo is digitized and obtains corresponding characteristic parameter；
Step 4: various in the characteristic parameter and the defect database of the corresponding various crystal edge defects of the monitored wafer
The characteristic parameter of crystal edge defect carries out subtractive, and the corresponding various crystal edge defects of the monitored wafer are determined according to subtractive value
Type.
2. the monitoring method of the crystal edge defect of wafer as described in claim 1, it is characterised in that:
In step 4, if the characteristic parameter of one of corresponding each crystal edge defect of monitored wafer crystal edge defect and institute
The subtractive value for stating the characteristic parameter of one of defect database crystal edge defect is less than or equal to compare threshold value, then determines described supervised
The type for controlling the corresponding crystal edge defect of wafer is Known Species.
3. the monitoring method of the crystal edge defect of wafer as described in claim 1, it is characterised in that:
In step 4, if the characteristic parameter of one of corresponding each crystal edge defect of monitored wafer crystal edge defect and institute
The subtractive value for stating the characteristic parameter of the crystal edge defect of all kinds in defect database both greater than compares threshold value, then described in judgement
The type of the monitored corresponding crystal edge defect of wafer is New raxa.
4. the monitoring method of the crystal edge defect of wafer as claimed in claim 3, it is characterised in that: by the monitored wafer pair
The characteristic parameter of the crystal edge defect for the New raxa answered is added in the defect database.
5. the monitoring method of the crystal edge defect of wafer as described in claim 1, it is characterised in that: the wafer includes for diameter
6 inches, 8 inches and 12 inches or more.
6. the monitoring method of the crystal edge defect of wafer as described in claim 1, it is characterised in that: the crystal edge defect includes thin
Film peels off the defect to be formed.
7. the monitoring method of the crystal edge defect of wafer as claimed in claim 6, it is characterised in that: the crystal edge defect is corresponding
The film type of peeling includes: deielectric-coating, metal film, photoresist.
8. the monitoring method of the crystal edge defect of wafer as described in claim 1, it is characterised in that: include to described in step 2
Top surface, side and the bottom surface at the edge of monitored wafer are scanned respectively.
9. the monitoring method of the crystal edge defect of wafer as described in claim 1, it is characterised in that: the feature of the crystal edge defect
Parameter includes shape, area and bright spot.
10. the monitoring method of the crystal edge defect of wafer as described in claim 1, it is characterised in that: to the crystal edge defect
After photo is digitized, it is also necessary to carry out local left and right subtractive and realize background reduction.
11. the monitoring method of the crystal edge defect of wafer as described in claim 1, it is characterised in that: in the edge of the wafer
Portion is chip forming region.
12. the monitoring method of the crystal edge defect of wafer as claimed in claim 11, it is characterised in that: when being detected in step 4
The quantity of the crystal edge defect and the crystal edge defect be more than or equal to required value when, then to the monitored wafer cleaned with
Remove the crystal edge defect；
It is when the quantity for detecting the crystal edge defect and the crystal edge defect in step 4 is less than required value, then described monitored
Wafer carries out next step process.
13. the monitoring method of the crystal edge defect of wafer as claimed in claim 12, it is characterised in that: when being detected in step 4
When the quantity of the crystal edge defect and the crystal edge defect is more than or equal to required value, the previous step to the monitored wafer is also needed
The corresponding board of technique is checked.
14. the monitoring method of the crystal edge defect of wafer as claimed in claim 12, it is characterised in that: the monitored wafer is
Product wafer.
15. the monitoring method of the crystal edge defect of wafer as described in claim 1, it is characterised in that:
Be scanned the crystal edge defect at the edge of the corresponding wafer by using defect checking machine platform in step 1
It takes pictures；
The scanning at edge is carried out to monitored wafer using the defect checking machine platform in step 2 and is taken pictures.
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| CN201811632588.7A CN109727887B (en) | 2018-12-29 | 2018-12-29 | Wafer edge defect monitoring method |
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| CN201811632588.7A CN109727887B (en) | 2018-12-29 | 2018-12-29 | Wafer edge defect monitoring method |
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| CN109727887A true CN109727887A (en) | 2019-05-07 |
| CN109727887B CN109727887B (en) | 2021-06-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023279558A1 (en) * | 2021-07-09 | 2023-01-12 | 长鑫存储技术有限公司 | Defect detection method and apparatus, device and storage medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004257826A (en) * | 2003-02-25 | 2004-09-16 | Matsushita Electric Works Ltd | Visual examination method using color image and visual examination device |
| CN102982155A (en) * | 2012-11-29 | 2013-03-20 | 上海华力微电子有限公司 | System and method for searching defects based on pattern identification |
| CN104282587A (en) * | 2013-07-03 | 2015-01-14 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting edge defect of wafer |
| CN107275245A (en) * | 2017-05-22 | 2017-10-20 | 茆胜 | A kind of OLED minitype displayer Rapid checking device and its method for quickly detecting |
| CN107590511A (en) * | 2017-08-30 | 2018-01-16 | 武汉华星光电技术有限公司 | A kind of defect identification method and identifying system the defects of for automatic check machine |
-
2018
- 2018-12-29 CN CN201811632588.7A patent/CN109727887B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004257826A (en) * | 2003-02-25 | 2004-09-16 | Matsushita Electric Works Ltd | Visual examination method using color image and visual examination device |
| CN102982155A (en) * | 2012-11-29 | 2013-03-20 | 上海华力微电子有限公司 | System and method for searching defects based on pattern identification |
| CN104282587A (en) * | 2013-07-03 | 2015-01-14 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting edge defect of wafer |
| CN107275245A (en) * | 2017-05-22 | 2017-10-20 | 茆胜 | A kind of OLED minitype displayer Rapid checking device and its method for quickly detecting |
| CN107590511A (en) * | 2017-08-30 | 2018-01-16 | 武汉华星光电技术有限公司 | A kind of defect identification method and identifying system the defects of for automatic check machine |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023279558A1 (en) * | 2021-07-09 | 2023-01-12 | 长鑫存储技术有限公司 | Defect detection method and apparatus, device and storage medium |
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