JPH08288336A - Semiconductor device - Google Patents

Abstract

PURPOSE: To prevent short circuit between a conductive adhesive and a terminal by placing the conductive adhesive in a first gap between the forward end part of a height control terminal and a board at the joint thereto and in a second gap between the forward end part of the height control terminal and the board at the joint to an I/O signal terminal. CONSTITUTION: A conductive adhesive 31 is placed in a first gap 4 between the forward end part of the height control terminal 52 of a semiconductor device 11 and the transparent electrode 22 on the height control pad 23 of a substrate 21, and in a second gap 41 between the forward end part of the height control terminal 52 and the transparent electrode 22 of the substrate 21. Furthermore, sealing resin 32 is placed in the gap between the semiconductor device 11 and the substrate 21 in order to hold connection between them for a long term. Since the distance between adjacent terminals can be minimized, a fine pattern semiconductor mounting structure can be realized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure of a semiconductor device in which a protruding electrode provided on the semiconductor device and a substrate are connected by using a conductive adhesive.

[0002]

2. Description of the Related Art In order to satisfy recent demands for light, thin, short, and small electronic devices, liquid crystal display devices have been downsized, increased in density, and increased in definition. In particular, there is a strong demand for reducing the mounting area of the semiconductor device, which is a portion that is not the pixel area. In order to reduce the mounting area, the element size of the semiconductor device is miniaturized, and the outer shape of the semiconductor device is reduced.

Further, the transparent electrodes on the substrate of the liquid crystal display device are also miniaturized to cope with the reduction of the mounting area. As a means for mounting a semiconductor device on a liquid crystal display device, a chip-on-glass mounting structure with a narrow mounting area is drawing attention.

Among the chip-on-glass mounting structures, a connection using a conductive adhesive, which enables fine connection and is excellent in mass productivity, will be described with reference to the drawings. FIG. 10 is a sectional view for explaining a method of disposing a conductive adhesive on a protruding electrode of a semiconductor device, FIG. 17 is a sectional view showing a mounting structure of the semiconductor device, and FIG. 18 is a sectional view showing the semiconductor device.

As shown in FIG. 18, in the semiconductor device 11, an aluminum electrode 12 for connecting to the outside is arranged on the semiconductor element forming surface of the semiconductor device 11. A protective film 13 for protecting the semiconductor element is provided so that the aluminum electrode 12 has an opening exposed.

A common electrode film 14 is provided on the aluminum electrode 12. The protruding electrode 15 is provided on the common electrode film 14. The conductive adhesive 31 is applied to the protruding electrode 15 of the semiconductor device 11.
Place it in a hemispherical shape only at the tip of.

The common electrode film 14 is formed to adhere the aluminum electrode 12 and the protruding electrode 15 and prevent diffusion. The protruding electrode 15 has a height of 20 μm in order to selectively dispose the conductive adhesive 31 only on the connecting portion. The conductive adhesive 31 is composed of an epoxy adhesive mixed with conductive particles such as gold, silver, copper, aluminum and nickel.

As a method for disposing the conductive adhesive 31 on the tip of the protruding electrode 15 of the semiconductor device 11, a dipping method is generally used. As shown in FIG. 10, the paste groove 34 provided in the paste reservoir 33 is filled with the conductive adhesive 31, and squeegeeed to flatten the surface of the conductive adhesive 31.

Next, the protruding electrode 15 of the semiconductor device 11 is immersed in the conductive adhesive 31 in the paste groove 34 about 1/3 of the height of the protruding electrode 15, and then pulled up. In this way, the semiconductor device 11 is arranged in a hemispherical shape only at the tip of the protruding electrode 15.

The viscosity of the conductive adhesive 31 is 100 p to 10
Set to the range of 00p. The viscosity of the conductive adhesive 31 is 100
When it is less than p, the conductive adhesive 31 arranged at the tip of the protruding electrode 15 of the semiconductor device 11 flows to the protective film.

The conductive adhesive 31 has a viscosity of 1000.
When it is p or more, the flatness of the surface of the conductive adhesive 31 becomes poor when the conductive adhesive 31 is squeegeeed. As a result, the conductive adhesive 31 is applied to the protruding electrode 15 of the semiconductor device 11.
It is placed not only on the tip portion of but also on the protective film, resulting in a short circuit with the adjacent terminal.

As shown in FIG. 17, the substrate 21 is a transparent electrode 22 made of indium tin oxide (hereinafter referred to as ITO) which serves as an electrode pattern connected to the protruding electrode 15 of the semiconductor device 11.
To place.

The protruding electrode 15 of the semiconductor device 11 and the substrate 21
The transparent electrode 22 is connected to the transparent electrode 22 through the conductive adhesive 31. Further, in order to maintain the connection between the semiconductor device 11 and the substrate 21 for a long time, the sealing resin 32 is provided in the gap between the semiconductor device 11 and the substrate 21.

[0014]

In the conventional semiconductor device structure shown in FIG. 17, the semiconductor device 11 having the protruding electrode 15 having the conductive adhesive 31 and the substrate 21 having the transparent electrode 22 are aligned with each other. After that, the semiconductor device 11 and the substrate 21 are connected while being pressed.

Therefore, a very thin layer of conductive adhesive 31 is formed between the protruding electrode 15 of the semiconductor device 11 and the transparent electrode 22 of the substrate 21. Except for the thin layer of conductive adhesive 31, a large amount of conductive adhesive 31 is applied to the transparent electrode 22 of the substrate 21.
And then spread out and contact the conductive adhesive of the adjacent terminal, causing a short circuit failure.

As a countermeasure against the short-circuit failure due to the spread of the conductive adhesive 31, it is possible to reduce the amount of the conductive adhesive 31 placed at the tip of the protruding electrode 15 of the semiconductor device 11.

However, it is very difficult to stably control a minute amount of the conductive adhesive 31 having a viscosity of 100 to 1000 p at the tip of the plurality of protruding electrodes 15 formed on the entire surface of the semiconductor device 11, and the semiconductor device is very difficult. 11 protruding electrodes 15
At present, it is arranged in a hemispherical shape at the tip of the.

To solve this problem, the object of the present invention is to
An object of the present invention is to provide a mounting structure of a semiconductor device in which a conductive adhesive does not short-circuit with an adjacent terminal even if the distance between the adjacent terminals becomes small.

[0019]

In order to achieve the above object, the semiconductor device of the present invention adopts the structure described below.

In the semiconductor device of the present invention, the first gap between the tip of the height control terminal of the semiconductor device and the substrate at the connection portion of the height control terminal of the semiconductor device, and the first gap. A conductive adhesive is interposed between the tip of the input / output signal terminal of the semiconductor device and the second gap between the substrate at the connecting portion of the input / output signal terminal of the semiconductor device and the board. Is characterized by.

[0021]

The structure employs a structure in which a height control pad having a height higher than that of the transparent electrode of the substrate is provided at a position corresponding to the height control terminal of the semiconductor device. From the first gap between the tip of the height control terminal of the semiconductor device and the height control pad of the substrate to the second gap between the tip of the input / output signal terminal of the semiconductor device and the transparent electrode of the substrate. The gap between can be widened.

As a result, when the semiconductor device and the substrate are connected, the conductive adhesive sticks out laterally and spreads at the connecting portion between the height control terminal of the semiconductor device and the height control pad of the substrate. In the connection portion between the input / output signal terminal of the semiconductor device and the transparent electrode of the substrate, there is a space for holding the conductive adhesive by the height of the height control pad.

Therefore, the amount of the conductive adhesive connecting the input / output signal terminal of the semiconductor device and the transparent electrode of the substrate to the transparent electrode of the substrate can be suppressed. As a result, the distance between adjacent terminals can be minimized,
An unprecedented fine semiconductor device mounting structure can be realized.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings by applying a semiconductor device mounting structure to a liquid crystal display device.

First, the mounting structure of the semiconductor device according to the first embodiment of the present invention will be described. A first embodiment will be described with reference to the drawings of FIGS. 1 is a cross-sectional view showing a mounting structure of a semiconductor device, FIG. 2 is a plan view showing a liquid crystal display device, FIG. 3 is a cross-sectional view showing a substrate taken along the line AA in FIG. 2, and FIG.
Is a plan view showing the semiconductor device, FIG. 5 is a cross-sectional view showing the semiconductor device, FIGS. 6 and 7 are cross-sectional views showing the substrate, FIG. 8 is a cross-sectional view showing the mounting structure of the semiconductor device, and FIG. 9 is a cross-sectional view showing the substrate. Figure,
FIG. 10 is a cross-sectional view for explaining a method of disposing a conductive adhesive on a protruding electrode of a semiconductor device.

As shown in FIG. 4, the semiconductor device 11 includes a plurality of input / output signal terminals 5 on the surface of the semiconductor device 11.
1 and a plurality of height control terminals 52 at the four corners of the surface of the semiconductor device 11.

As shown in FIG. 5, the semiconductor device 11 has an input / output signal terminal 51 on the semiconductor element formation surface of the semiconductor device 11.
And the aluminum electrode 12 of the height control terminal 52 is arranged. A protective film 13 for protecting the semiconductor element is provided so that the aluminum electrode 12 has an opening exposed.

The common electrode film 14 is provided on the aluminum electrodes 12 of the input / output signal terminal 51 and the height control terminal 52. The protruding electrode 15 is provided on the common electrode film 14 of the input / output signal terminal 51 and the height control terminal 52. Further, the conductive adhesive 31 is used for the input / output signal terminal 51 and the height control terminal 5.
It is arranged at the tip of the second protruding electrode 15.

The common electrode film 14 is formed to adhere the aluminum electrode 12 and the protruding electrode 15 and prevent diffusion. The protruding electrode 15 has a height of 20 μm in order to selectively dispose the conductive adhesive 31 only on the connecting portion.

The conductive adhesive 31 is formed by mixing conductive particles such as gold, silver, copper, aluminum or nickel into an epoxy adhesive. The viscosity is set to 100 p to 1000 p in order to dispose an appropriate amount only at the tip portions of the input / output signal terminal 51 and the height control terminal 52 of the semiconductor device 11.

As shown in FIGS. 2 and 3, the substrate 21 is provided with the height control pad 23 at a position corresponding to the height control terminal 52 of the semiconductor device 11. The height control pad 23 is an organic film such as polyimide resin or acrylic resin, an inorganic film such as liquid glass, a metal such as aluminum, nickel, titanium or tungsten, a silicon oxide film or a silicon nitride film, or a multilayer thereof. Use a membrane. The height control pad 23 has a height of 3 μm.

The transparent electrode 22 is provided at a position corresponding to the input / output signal terminal 51 and the height control terminal 52 of the semiconductor device 11 of the substrate 21 having the height control pad. The transparent electrode 22 becomes a display pixel pattern in the pixel area of the liquid crystal display device. The transparent electrode 22 is made of ITO and has a film thickness of 0.
3 μm is provided.

As shown in FIG. 1, the tip of the height control terminal 52 of the semiconductor device 11 and the height control pad 2 of the substrate 21.
3, the first gap 42 between the transparent electrode 22 and the transparent electrode 22, and the tip of the input / output signal terminal 51 of the semiconductor device 11 and the substrate 21.
The conductive adhesive 31 is interposed in the second gap 41 between the transparent electrode 22 and the transparent electrode 22.

Further, in order to maintain the connection between the semiconductor device 11 and the substrate 21 for a long period of time, the sealing resin 32 is applied to the semiconductor device 1.
It is provided in the gap between 1 and the substrate 21.

The first embodiment employs a structure in which the height control pad 23 is provided on the substrate 21 at a position corresponding to the height control terminal 52 of the semiconductor device 11.

From the first gap 42 between the tip of the height control terminal 52 of the semiconductor device 11 and the height control pad 23 of the substrate 21, the input / output signal terminal 51 of the semiconductor device 11 is obtained.
The second gap 41 between the tip of the substrate and the transparent electrode 21 of the substrate 21 can be widened by the height of the height control pad 23.

As a result, when the semiconductor device 11 and the substrate 21 are connected, the conductive adhesive 31 in the first gap 42 sticks out laterally and spreads, but the conductive adhesive 31 in the second gap 41 becomes high. The space for securing the conductive adhesive 31 is provided only at the height of the control pad 23.

Therefore, the amount of the conductive adhesive 31 connecting the input / output signal terminal 51 of the semiconductor device 11 and the transparent electrode 22 of the substrate 21 spreading to the transparent electrode 22 of the substrate 21 can be suppressed. . As a result, the distance to the adjacent terminal can be minimized, so that an unprecedented fine semiconductor device mounting structure can be realized.

Next, a manufacturing method for forming the mounting structure of the semiconductor device in the first embodiment will be described.

First, a method of manufacturing a semiconductor device will be described. As shown in FIG. 4, the semiconductor device 11 includes a plurality of input / output signal terminals 51 and height control terminals 5 arranged at four corners.
2 and are provided.

As shown in FIG. 5, the aluminum electrode 12 of the input / output signal terminal 51 and the height control terminal 52 made of aluminum provided on the element formation surface of the semiconductor device 11 is formed.

Further, a protective film 13 for protecting the semiconductor element is formed on the entire surface of the semiconductor device 11 including the aluminum electrode 12. The protective film 13 is generally formed of an inorganic film such as a silicon oxide film or a silicon nitride film containing phosphorus, an organic film such as a polyimide resin, or a laminated structure of these, and the film thickness formed is 1 to 5 μm. .

After that, the protective film 13 is opened so that the aluminum electrodes 12 of the input / output signal terminal 51 and the height control terminal 52 are exposed by photolithography and etching in which exposure and development processing is performed using a predetermined mask.

Further, a metal multi-layered film of aluminum, chromium, copper, nickel, titanium or the like is used as the common electrode film 14 on the entire surface of the semiconductor device 11 with a thickness of 0.005 to 10 μm, respectively, by a method such as a sputtering method or a vacuum deposition method. To form.

Next, a plating resist made of a photosensitive dry film is formed on the entire surface of the common electrode film 14 formed on the semiconductor device 11 to a thickness of 20 to 30 μm. After that, openings are provided on the aluminum electrodes 12 of the input / output signal terminals 51 and the height control terminals 52 by photolithography in which exposure and development processing is performed using a predetermined mask.

After that, the protruding electrode 15 of the input / output signal terminal 51 and the height control terminal 52 made of metal such as copper or gold is used.
Are formed by a plating method.

The protruding electrode 15 is formed with a height of 20 μm in order to selectively dispose the conductive adhesive 31 only on the connecting portion. After that, remove the unnecessary plating resist,
The common electrode film 1 using the protruding electrodes 15 as an etching mask
Remove 4.

Next, the conductive adhesive 31 is placed on the tip ends of the projecting electrodes 15 of the input / output signal terminals 51 and the height control terminals 52 formed on the semiconductor device 11. Conductive adhesive 31
Is an epoxy adhesive mixed with conductive particles such as gold, silver, copper, aluminum or nickel.

A dipping method is known as a method for disposing the conductive adhesive 31 on the tip of the protruding electrode 15 of the semiconductor device 11. As shown in FIG. 10, the paste groove 34 provided in the paste reservoir 33 is filled with the conductive adhesive 31, and squeegeeed to flatten the surface of the conductive adhesive 31.

Further, the protruding electrode 15 of the semiconductor device 11 is immersed in the conductive adhesive 31 in the paste groove 34 about 1/3 of the height of the protruding electrode 15 and then pulled up. In this way, the semiconductor device 11 is arranged in a hemispherical shape only at the tip of the protruding electrode 15.

The viscosity of the conductive adhesive 31 is 100 p-10.
Set to the range of 00p. The viscosity of the conductive adhesive 31 is 100
When it is less than p, the conductive adhesive 31 arranged at the tip of the protruding electrode 15 of the semiconductor device 11 flows to the protective film.

The viscosity of the conductive adhesive 31 is 1000.
When it is p or more, the flatness of the surface of the conductive adhesive 31 becomes poor when the conductive adhesive 31 is squeegeeed. As a result, the conductive adhesive 31 is applied to the protruding electrode 15 of the semiconductor device 11.
It is placed not only on the tip portion of but also on the protective film, resulting in a short circuit with the adjacent terminal.

Next, a method of manufacturing the substrate will be described. Figure 6
As shown in FIG. 2, a photosensitive water-soluble resist that becomes the color filter 24 is spin-coated on the entire surface of the substrate 21 made of glass to a film thickness of 1 to 2 μm.

Next, an exposure and development process is performed using a predetermined mask to pattern the pixel region. Further, a dyeing process and a fixing process are performed to form a colored pattern.

Further, for the purpose of flattening the substrate 21, an overcoat film 25 made of a transparent acrylic resin having photosensitivity is formed on the entire surface of the substrate 21 on which the color filter 24 is formed.
Is formed with a film thickness of 3 μm.

After that, an exposure and development process is performed using a predetermined mask to cover the color filter 24 in the pixel region,
The height control pad 23 is formed in the mounting region with the semiconductor device 11.

The transparent electrode 22 made of ITO is formed on the entire surface of the substrate 21 on which the color filter 24 and the overcoat film 25 are formed by a sputtering method or a vacuum evaporation method. The formed film thickness is 0.3 μm.

Next, a resist made of a photosensitive resin is applied to the entire surface of the transparent electrode 22 in a thickness of 1 to 2 μm. The exposure and development process is performed using a predetermined mask so that the patterns correspond to the input / output signal terminals 51 and the height control terminals 52 of the semiconductor device 11.

Further, the transparent electrode 22 is patterned by etching, and the unnecessary resist is removed. The transparent electrode 22 is generally etched by dipping it in a hydrochloric acid-based etching solution. The transparent electrode 22 can also be etched by dry etching such as reactive ion etching using a reactive gas or sputtering etching using a high frequency.

Next, a method of connecting the semiconductor device and the substrate will be described. As shown in FIG. 1, on the input / output signal terminal 51 of the semiconductor device 11, the transparent electrode 22 of the substrate 21, the height control terminal 52 of the semiconductor device 11 and the height control pad 23 of the substrate 21. The transparent electrode 22 is aligned with a binocular microscope or the like.

After that, while pressing the semiconductor device 11 and the substrate 21, for controlling the height of the semiconductor device 11 between the tip of the input / output signal terminal 51 of the semiconductor device 11 and the transparent electrode 22 of the substrate 21. A conductive adhesive 31 is interposed between the tip of the terminal 52 and the transparent electrode 22 on the height control pad 23 of the substrate 21 for connection. Then, the temperature 80-1
The conductive adhesive 31 is cured at 20 ° C.

Furthermore, in order to maintain the connection between the semiconductor device 11 and the substrate 21 for a long time, the sealing resin 32 is poured into the gap between the semiconductor device 11 and the substrate 21. The sealing resin 32 is
An insulating resin made of an organic material such as epoxy is used.
Then, the sealing resin 32 is cured at a temperature of 80 to 120 ° C.

In the embodiment of the manufacturing method for forming the mounting structure of the semiconductor device described above, the height control pad is described as the method using the overcoat film for relaxing the step due to the color filter. Further, the height control pad can be formed on the substrate by performing the film forming step, the photolithography step, and the etching step.

As shown in FIG. 7, the substrate 2 made of glass is used.
1, an organic film such as a polyimide resin or an acrylic resin that becomes the height control pad 23, an inorganic film such as liquid glass, a metal such as aluminum, nickel, titanium, or tungsten, a silicon oxide film or a silicon nitride film. Alternatively, these multilayer films are also formed by a spin coating method, a vacuum deposition method, a sputtering method, or a vapor phase growth method.

Next, a resist made of a photosensitive resin is applied on the entire surface of the substrate 21 to a thickness of 1 to 10 μm. An exposure and development process is performed using a mask so that the pattern corresponds to the height control terminal 52 of the semiconductor device 11.

Further, the height control pad 23 is patterned by reactive ion etching using a reactive gas or sputtering etching using a high frequency.
After that, the resist that is no longer needed is removed.

In the embodiment described above, the protruding electrode 15 of the height control terminal 52 of the semiconductor device 11 and the substrate 21 are arranged.
The connection with is described in the case where the transparent electrode 22 is used. However, it is also possible not to form the transparent electrode 22 on the height control pad 23 of the substrate 21.

As shown in FIG. 9, the substrate 21 is provided with the height control pad 23 at a position corresponding to the height control terminal 52 of the semiconductor device 11. Further, the transparent electrode 22 is arranged at a position connected to the input / output signal terminal 51 of the substrate 21.

When the transparent electrode 22 is not formed on the height control pad 23 of the substrate 21, the height control pad 23 is provided with a height of 3.3 μm.

As shown in FIG. 8, conductive adhesion is provided between the tip of the input / output signal terminal 51 and the tip of the height control terminal 52 of the semiconductor device 11 and the height control pad 23 of the substrate 21. The agent 31 is connected with the agent 31 interposed. Furthermore, the semiconductor device 11
In order to maintain the connection between the substrate 21 and the substrate 21 for a long period of time, the sealing resin 32 is provided in the gap between the semiconductor device 11 and the substrate 21.

Whether or not the transparent electrode 22 is present is determined by the conductive adhesive 31.
It is desirable to select it according to the compatibility such as the adhesive strength with.

Next, a second embodiment of the present invention will be described with reference to the drawings. 4 is a plan view showing a semiconductor device, FIG. 11 is a sectional view showing a mounting structure of the semiconductor device, FIG. 12 is a sectional view showing a substrate, FIG. 13 is a sectional view showing the semiconductor device, FIG.
15 is a cross-sectional view of the semiconductor device for explaining the method for manufacturing the bump electrode of the semiconductor device, and FIG. 16 is a cross-sectional view showing the semiconductor device.

As shown in FIG. 4, the semiconductor device 11 includes a plurality of input / output signal terminals 51 on the surface of the semiconductor device 11.
And a plurality of height control terminals 52 at the four corners of the surface of the semiconductor device 11.

As shown in FIG. 13, the semiconductor device 11 is
The aluminum electrode 12 of the input / output signal terminal 51 and the height control terminal 52 is arranged on the semiconductor element formation surface of the semiconductor device 11. A protective film 13 for protecting the semiconductor element is provided so that the aluminum electrode 12 has an opening exposed.

The common electrode film 14 is provided on the aluminum electrodes 12 of the input / output signal terminal 51 and the height control terminal 52. The protruding electrode 15 is provided on the common electrode film 14 of the input / output signal terminal 51 and the height control terminal 52.

The protruding electrode 15 of the input / output signal terminal 51 is
The height is 20 μm. The height of the protruding electrode 15 of the height control terminal 52 is 3 μm higher than that of the protruding electrode 15 of the input / output signal terminal 51, and the height thereof is 23 μm.

Further, the conductive adhesive 31 is applied to the semiconductor device 11
The input / output signal terminal 51 and the height control terminal 52 are arranged at the tip of the protruding electrode 15.

The conductive adhesive 31 is formed by mixing conductive particles such as gold, silver, copper, aluminum and nickel into an epoxy adhesive.

As shown in FIG. 12, the substrate 21 is provided with the transparent electrode 22 serving as an electrode pattern connected to the input / output signal terminal 51 and the height control terminal 52. The transparent electrode 22 is I
A film thickness of 0.3 μm is arranged using TO.

As shown in FIG. 11, the tip of the height control terminal 52 of the semiconductor device 11 and the transparent electrode 22 of the substrate 21.
The conductive adhesive 31 is interposed in the first gap 42 between the transparent electrode 22 and the second gap 41 between the tip of the input / output signal terminal 51 of the semiconductor device 11 and the transparent electrode 22 of the substrate 21. Let

Furthermore, in order to maintain the connection between the semiconductor device 11 and the substrate 21 for a long period of time, the sealing resin 32 is applied to the semiconductor device 1.
It is provided in the gap between 1 and the substrate 21.

In the structure of the second embodiment, the protruding electrode 15 of the height control terminal 52 provided in the semiconductor device 11 is 3 μm higher than the protruding electrode 15 of the input / output signal terminal 51. .

The first gap 42 between the tip of the height control terminal 52 of the semiconductor device 11 and the transparent electrode 22 of the substrate 21.
As a result, the second gap 41 between the tip of the input / output signal terminal 51 of the semiconductor device 11 and the transparent electrode 21 of the substrate 21 is set to 3 mm.
It can be widened by μm.

As a result, when the semiconductor device 11 and the substrate 21 are connected, the conductive adhesive 31 in the first gap 42 sticks out laterally and spreads, but the conductive adhesive 31 in the second gap 41 becomes high. The space for securing the conductive adhesive 31 is provided only at the height of the control pad 23.

Therefore, the amount of the conductive adhesive 31 connecting the input / output signal terminal 51 of the semiconductor device 11 and the transparent electrode 22 of the substrate 21 to the transparent electrode 22 of the substrate 21 can be suppressed. As a result, the distance to the adjacent terminal can be minimized, so that an unprecedented fine semiconductor device mounting structure can be realized.

Next, a manufacturing method for forming the mounting structure of the semiconductor device in the second embodiment will be described. First, a method of manufacturing a bump electrode formed on a semiconductor device will be described.

The aluminum electrode 12, the protective film 13, and the common electrode film 14 provided on the semiconductor device 11 are manufactured by the same method as in the first embodiment.

As shown in FIG. 14, the aluminum electrode 1
2, a plating resist 16 made of a photosensitive resin is formed on the entire surface of the semiconductor device 11 on which the protective film 13, the protective film 13, and the common electrode film 14 are formed.
Is applied to a thickness of 3 to 5 μm. After that, by photolithography that performs exposure and development using a predetermined mask,
An opening is provided on the height control terminal 52.

Thereafter, the bump electrode 1 made of a metal such as copper or gold is used.
5 is formed by a plating method. A film thickness of 3 μm, which is the height difference between the input / output signal terminal 51 and the height control terminal 52, is formed. After that, the unnecessary plating resist 16 is removed.

Further, as shown in FIG. 15, a plating resist 16 made of a photosensitive dry film is formed with a thickness of 20 to 3
0 μm is formed. After that, an opening is provided on the input / output signal terminal 51 and the height control terminal 52 by photolithography in which exposure and development processing is performed using a predetermined mask.

After that, the protruding electrodes 15 made of metal such as copper or gold are formed by the plating method. The protruding electrode 15 of the input / output signal terminal 51 is formed to a height of 20 μm. The height of the protruding electrode 15 of the height control terminal 52 is 23 μm, including the height of 3 μm formed in the first plating step.

Thereafter, the unnecessary plating resist 16 is removed. Further, the common electrode film 14 is removed using the protruding electrodes 15 as an etching mask.

The conductive adhesive 31 is applied to the bump electrodes 15 of the input / output signal terminal 51 and the height control terminal 52 of the semiconductor device 11.
The method of arranging it at the tip end of is manufactured in the same manner as in the first embodiment.

Next, a method of manufacturing the substrate will be described. 12
As shown in, ITO is formed on the entire surface of the substrate 21 made of glass.
The transparent electrode 22 made of is formed by a sputtering method or a vacuum evaporation method. The formed film thickness is 0.3 μm.

Next, a resist made of a photosensitive resin is applied to the entire surface of the transparent electrode 22 to a thickness of 1 to 10 μm.

Further, exposure / development processing is performed using a mask so that a pattern corresponding to the input / output signal terminal 51 and the height control terminal of the semiconductor device 11 is obtained.

The transparent electrode 22 is patterned by etching. Further, the unnecessary resist is removed.
The method of mounting the semiconductor device on the substrate is the same as that of the first embodiment.

Next, the height control terminal 5 of the semiconductor device 11 which is higher than the input / output signal terminal 51 of the semiconductor device 11 is used.
The structure for providing 2 is other than the above-described structure for providing the protruding electrode 15 of the height control terminal 52 of the semiconductor device 11 which is higher than the protruding electrode 15 of the input / output signal terminal 51 of the semiconductor device 11. To do.

First, the structure of the semiconductor device will be described. As shown in FIG. 16, in the semiconductor device 11, the aluminum electrodes 12 of the input / output signal terminals 51 and the height control terminals 52 are arranged on the semiconductor element formation surface of the semiconductor device 11. A protective film 13 for protecting the semiconductor element is provided so that the aluminum electrode 12 of the input / output signal terminal 51 is exposed. The protective film 13 has a thickness of 3 μm.

The common electrode film 14 is provided on the aluminum electrode 12 of the input / output signal terminal 51 and on the protective film 13 on the aluminum electrode 12 of the height control terminal 52.

Further, the protruding electrode 15 is provided on the common electrode film 14 of the input / output signal terminal 51 and the height control terminal 52. The height of the protruding electrode 15 of the input / output signal terminal 51 and the height control terminal 52 is set to 20 μm.

In the structure of the semiconductor device described above, the height control terminal of the semiconductor device 11 is composed of the aluminum electrode 12, the protective film 13, the common electrode film 14 and the protruding electrode 15. Therefore, the structure is higher than the input / output signal terminal constituted by the aluminum electrode 12, the common electrode film 14, and the protruding electrode 15 by the film thickness of the protective film 13.

As a result, the height control terminal 52 of the semiconductor device 11 which is higher than the input / output signal terminal 51 of the semiconductor device 11 can be provided.

Next, a method of manufacturing the protruding electrode of the semiconductor device will be described. As shown in FIG. 16, the aluminum electrode 12 of the input / output signal terminal 51 and the height control terminal 52 made of aluminum provided on the element formation surface of the semiconductor device 11.
To form.

Further, a protective film 13 for protecting the semiconductor element is formed on the entire surface of the semiconductor device 11 including the aluminum electrode 12. The protective film 13 is generally formed of an inorganic film such as a silicon oxide film containing phosphorus, a silicon nitride film or the like, an organic film such as a polyimide resin, or a laminated structure of these, and has a film thickness of 3 μm.

Thereafter, the protective film 13 is opened so that the aluminum electrode 12 of the input / output signal terminal 51 is exposed by photolithography and etching in which exposure and development processing is performed using a predetermined mask.

After that, the common electrode film 14 and the protruding electrodes 15 formed on the semiconductor device 11 are manufactured by the same method as in the first embodiment.

In the above description of the method for manufacturing the protruding electrode of the semiconductor device, the protective film 13 of the semiconductor device 11 is used as a means for providing the height control terminal 52 higher than the input / output signal terminal 51 of the semiconductor device 11. Has been described as an example in which is used as a part of the height control terminal 52.

However, if the thin film forming step and the patterning step are used in the manufacturing process of the semiconductor device, the height control terminal 52 of the semiconductor device 11 which is higher than the input / output signal terminal 51 of the semiconductor device 11 is easily provided. It is possible.

[0110]

As is apparent from the above description, the first embodiment employs a structure in which height control pads are provided on the substrate at positions corresponding to the height control terminals of the semiconductor device.

Furthermore, in the second embodiment of the present invention, the height control terminal provided on the semiconductor device has a height 3 μm higher than that of the input / output signal terminal.

From the first gap between the tip of the height control terminal of the semiconductor device and the height control pad of the substrate, between the tip of the input / output signal terminal of the semiconductor device and the transparent electrode of the substrate. The second gap can be widened.

As a result, when the semiconductor device and the substrate are connected, the conductive adhesive sticks out laterally and spreads at the connection portion between the height control terminal of the semiconductor device and the height control pad of the substrate. In the connection portion between the input / output signal terminal of the semiconductor device and the transparent electrode of the substrate, there is a space for holding the conductive adhesive by the height of the height control pad.

Therefore, the amount of the conductive adhesive connecting the input / output signal terminal of the semiconductor device and the transparent electrode of the substrate to the transparent electrode of the substrate can be suppressed. As a result, the distance between adjacent terminals can be minimized,
An unprecedented fine semiconductor device mounting structure can be realized.

Further, within a range in which the height control terminal of the semiconductor device and the input / output signal terminal of the semiconductor device or the transparent electrode of the substrate corresponding to the input / output signal terminal of the semiconductor device are not short-circuited,
By increasing the diameter of the height control terminal of the semiconductor device, the adhesive force between the semiconductor device and the substrate is improved.

Since distortion due to thermal stress is concentrated at the four corners of the semiconductor device, the diameters of the protruding electrodes of the height control terminals formed at the four corners of the semiconductor device are increased so as to surround the outer peripheral portion of the semiconductor device. As a result, it is possible to provide a mounting structure for a semiconductor device, which has better environment resistance than conventional ones, despite the reduction in the connection area of the input / output signal terminals of the semiconductor device.

Furthermore, when the height control terminal of the semiconductor device is connected to the ground potential by the transparent electrode of the inside of the semiconductor device or the connected substrate, it is possible to provide a mounting structure of the semiconductor device excellent in resistance to noise such as static electricity. You can

[Brief description of drawings]

FIG. 1 is a sectional view showing a mounting structure of a semiconductor device according to an embodiment of the invention.

FIG. 2 is a plan view showing a liquid crystal display device to which a semiconductor device according to an embodiment of the present invention is applied.

FIG. 3 is a cross-sectional view showing a substrate for connecting a semiconductor device in an example of the present invention.

FIG. 4 is a plan view showing a semiconductor device according to an example of the invention.

FIG. 5 is a cross-sectional view showing a semiconductor device in an example of the present invention.

FIG. 6 is a cross-sectional view showing a substrate for connecting a semiconductor device in an example of the present invention.

FIG. 7 is a cross-sectional view showing a substrate for connecting a semiconductor device in an example of the present invention.

FIG. 8 is a cross-sectional view showing a mounting structure of a semiconductor device in an example of the present invention.

FIG. 9 is a cross-sectional view showing a substrate for connecting a semiconductor device in an example of the present invention.

FIG. 10 is a cross-sectional view for explaining a method of disposing a conductive adhesive on a protruding electrode of a semiconductor device according to an example of the present invention and a conventional example.

FIG. 11 is a cross-sectional view showing a mounting structure of a semiconductor device in an example of the present invention.

FIG. 12 is a cross-sectional view showing a substrate for connecting a semiconductor device in an example of the present invention.

FIG. 13 is a sectional view showing a semiconductor device in an example of the present invention.

FIG. 14 is a sectional view showing a semiconductor device according to an example of the present invention.

FIG. 15 is a sectional view showing a semiconductor device in an example of the present invention.

FIG. 16 is a sectional view showing a semiconductor device in an example of the present invention.

FIG. 17 is a cross-sectional view showing a mounting structure of a semiconductor device for explaining a conventional example.

FIG. 18 is a cross-sectional view showing a semiconductor device for explaining a conventional example.

[Explanation of symbols]

 11 Semiconductor Device 15 Projection Electrode 21 Substrate 22 Connection Electrode 23 Height Control Pad 31 Conductive Adhesive 41 First Gap 42 Second Gap 51 Input / Output Signal Terminal 52 Height Control Terminal

Claims (10)

[Claims] 1. A first gap between a tip portion of a height control terminal of a semiconductor device and a substrate at a connection portion between the height control terminal of the semiconductor device and a semiconductor device wider than the first gap. A semiconductor device, characterized in that a conductive adhesive is interposed and connected to a second gap between the tip of the input / output signal terminal and the substrate at the connection portion of the input / output signal terminal of the semiconductor device. . 2. The means for making the second gap wider than the first gap is a height control pad corresponding to a height control terminal of the semiconductor device, a transparent electrode on the height control pad, and the semiconductor device. 2. The semiconductor device according to claim 1, wherein the substrate is composed of a transparent electrode corresponding to the input / output signal terminal. 3. The semiconductor device according to claim 2, wherein the height control pad is made of an organic film. 4. The semiconductor device according to claim 2, wherein the height control pad is made of an inorganic film. 5. The means for making the second gap wider than the first gap is a transparent electrode corresponding to an input / output signal terminal of the semiconductor device and a height control pad corresponding to a height control terminal of the semiconductor device. The semiconductor device according to claim 1, wherein the substrate is formed of. 6. The semiconductor device according to claim 5, wherein the height control pad is made of an organic film. 7. The semiconductor device according to claim 5, wherein the height control pad is made of an inorganic film. 8. The means for making the second gap wider than the first gap is for controlling the height of an input / output signal terminal of a semiconductor device and a semiconductor device having a height higher than that of the input / output signal terminal of the semiconductor device. A semiconductor device comprising a terminal and a terminal.
The semiconductor device according to. 9. The means for making the height of the height control terminal of the semiconductor device higher than the height of the input / output signal terminal of the semiconductor device includes a protruding electrode of the input / output signal terminal of the semiconductor device and a semiconductor device of the semiconductor device. 9. The semiconductor device according to claim 8, wherein the semiconductor device is configured with a protrusion electrode of a height control terminal of a semiconductor device having a height higher than that of the protrusion electrode of the input / output signal terminal. 10. A means for making the height control terminal of the semiconductor device higher than the input / output signal terminal of the semiconductor device is an input / output signal terminal composed of an aluminum electrode, a common electrode film, and a protruding electrode of the semiconductor device. 9. A semiconductor device comprising: an aluminum electrode of the semiconductor device; a protective film; a common electrode film; and a height control terminal composed of a protruding electrode.
The semiconductor device according to.