JPH0828382B2 - Bonding wire - Google Patents

Bonding wire

Info

Publication number
JPH0828382B2
JPH0828382B2 JP5196685A JP19668593A JPH0828382B2 JP H0828382 B2 JPH0828382 B2 JP H0828382B2 JP 5196685 A JP5196685 A JP 5196685A JP 19668593 A JP19668593 A JP 19668593A JP H0828382 B2 JPH0828382 B2 JP H0828382B2
Authority
JP
Japan
Prior art keywords
ball
bonding wire
bonding
content
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5196685A
Other languages
Japanese (ja)
Other versions
JPH06168974A (en
Inventor
道雄 佐藤
功 鈴木
和弘 山森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5196685A priority Critical patent/JPH0828382B2/en
Publication of JPH06168974A publication Critical patent/JPH06168974A/en
Publication of JPH0828382B2 publication Critical patent/JPH0828382B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract

PURPOSE:To improve creep strength and bonding quality, by using a Cu bonding wire containing a specific amount of specific metal. CONSTITUTION:In virtue of very small amount addition, Zn, Hf, Ti, Cr and Mn retard the recovery of dislocation and grain boundary transfer at the time of recrystallization, so that the recrystallization temperature is increased, and the grain boundary breaking of a Cu bonding wire is prevented. The content is set to be 20-560wtppm. Sb, P, Li, Sn, Pb and Cd react with permeated oxygen at the time of Cu ball formation, and generate oxide, which evaporates from the Cu ball and softens it. The content is set to be 25-250wtppm. As, Zn, K, Sr, Mg, Ca and Tl vaporize from Cu at the time of Cu ball formation, so that the permeation of oxygen into the Cu ball and the hardening of the Cu ball are prevented. The content is set to be 10-650wtppm. Letting the above metal groups be A, B and C, the combination of A and B or the combination of A and C is added to high purity copper.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、ボンディングワイヤに
関する。FIELD OF THE INVENTION The present invention relates to a bonding wire.

【０００２】[0002]

【従来の技術】一般に、トランジスタ，ＩＣ（集積回
路），ＬＳＩ（大規模集積回路）等の半導体装置として
は、例えば樹脂封止型ＩＣとしては図１の概略断面図に
示す構造のものが知られている。ダイフレーム１の上に
半導体チップであるペレット２をダイボンディングし、
このペレット２のアルミニウム（Ａｌ）電極とリードフ
レーム３とをボンディングワイヤ４で電気的接続した
後、これらを樹脂５でモールディングすることによって
形成される。2. Description of the Related Art Generally, as a semiconductor device such as a transistor, an IC (integrated circuit), an LSI (large-scale integrated circuit), a resin-sealed IC having a structure shown in the schematic sectional view of FIG. 1 is known. Has been. Die-bonding the semiconductor chip pellet 2 onto the die frame 1,
It is formed by electrically connecting the aluminum (Al) electrode of the pellet 2 and the lead frame 3 with a bonding wire 4 and then molding them with a resin 5.

【０００３】前記ボンディングワイヤとしては、熱圧着
法あるいは超音波併用熱圧着法によりボンディングする
線径20〜100 μｍの金（Ａｕ），超音波法によりボンデ
ィングする線径25〜50μｍのＡｌ合金（例えばＡｌ−１
％Ｓｉ，Ａｌ−１％Ｍｇ）と、線径 100〜500 μｍの高
純度Ａｌ（ 99.99％以上）などが用いられている。As the bonding wire, gold (Au) having a wire diameter of 20 to 100 μm to be bonded by a thermocompression bonding method or a thermocompression bonding method using ultrasonic waves, and an Al alloy having a wire diameter of 25 to 50 μm to be bonded by an ultrasonic wave method (for example, Al-1
% Si, Al-1% Mg) and high-purity Al (99.99% or more) having a wire diameter of 100 to 500 μm are used.

【０００４】現在、Ａｕボンディングワイヤは普及タイ
プのＩＣやＬＳＩ用に、Ａｌ系ボンディングワイヤはサ
ーディプ型またはパワートランジスタ用にと使い分けら
れている。At present, Au bonding wires are used for popular type ICs and LSIs, and Al bonding wires are used for sardip type or power transistors.

【０００５】近年、集積度の増加に伴う多ピン化の傾向
により、Ａｕボンディングワイヤのコストを無視するこ
とができなくなってきている。そのため、ボンディング
ワイヤを高価なＡｕから比較的安価なＣｕに変更するこ
とが検討されている。In recent years, the cost of Au bonding wires cannot be ignored due to the tendency of increasing the number of pins as the degree of integration increases. Therefore, changing the bonding wire from expensive Au to relatively inexpensive Cu is under study.

【０００６】また、ＣｕはＡｕに比べ材料コストが大幅
に低減する他に、導電率が高く細線化が可能であり、さ
らにＡｌ電極との金属間化合物が生成しにくく、接合部
の高温強度が優れているなどの特徴を有している。Further, Cu has a significantly lower material cost than Au, has a high conductivity, and can be formed into a fine wire. Further, an intermetallic compound with an Al electrode is unlikely to be formed, and the high temperature strength of the joint is high. It has features such as being excellent.

【０００７】Ｃｕボンディングワイヤを用いたボンディ
ングは、アルゴン，窒素，水素などの還元ガス雰囲気中
で、電気トーチによる放電あるいは酸水素炎による加熱
によりＣｕボンディングワイヤを先端部を溶融してボー
ルを形成し、このボールをＡｌ電極にキャピラリで超音
波を印加しながら接合する。Bonding using a Cu bonding wire forms a ball by melting the tip of the Cu bonding wire by discharging with an electric torch or heating with an oxyhydrogen flame in an atmosphere of a reducing gas such as argon, nitrogen or hydrogen. The ball is bonded to the Al electrode while applying ultrasonic waves with a capillary.

【０００８】[0008]

【発明が解決しようとする課題】Ｃｕボンディングワイ
ヤのボンディング時、Ｃｕボールの表面が侵入空気によ
って酸化し、さらに形成されたボールがＡｕあるいはＡ
ｌのボールに比較し硬度が高いために、半導体チップの
損傷あるいはボンディング強度不足による剥離などが発
生する場合があった。During the bonding of Cu bonding wires, the surface of Cu balls is oxidized by invading air, and the formed balls are Au or A.
Since the hardness of the ball is higher than that of the ball of 1, the semiconductor chip may be damaged or peeled due to insufficient bonding strength.

【０００９】そこで、Ｃｕの硬度を高くしているＳ，
Ｏ，Ｓｅ，Ｔｅ等の不純物元素を低減した高純度のＣｕ
ボンディングワイヤ（ 99.99％以上）を用いて上述の欠
点を解消する試みがなされているが、良好な結果は得ら
れていなかった。Therefore, S, which has a high hardness of Cu,
High-purity Cu with reduced impurity elements such as O, Se, Te
Attempts have been made to eliminate the above-mentioned drawbacks using bonding wires (99.99% or more), but good results have not been obtained.

【００１０】またＣｕボンディングワイヤによって配線
されたトランジスタ，ＩＣ，ＬＳＩは、一般に経済性や
量産性の点で優れている樹脂封止（例えばエポキシ樹
脂，シリコン樹脂等）して使用される。Transistors, ICs, and LSIs wired by Cu bonding wires are generally used after being resin-sealed (for example, epoxy resin, silicon resin, etc.) which is excellent in terms of economy and mass productivity.

【００１１】しかしながら、樹脂封止型素子はボンディ
ングワイヤが直接樹脂に包まれた状態になっているため
に、半導体素子の動作中の発熱によってボンディングワ
イヤには引張応力が加わる。これは、モールド樹脂（例
えばエポキシ樹脂：22〜30×10-6／℃）とボンディング
ワイヤ（Ｃｕ：17×10-6／℃）およびリードフレーム
（42合金： 4.5×10-6／℃）の熱膨張係数が大きく異な
るためで、半導体素子の動作中の発熱によって高温雰囲
気になると相互間の熱膨張差によってボンディングワイ
ヤには引張応力が作用する。However, in the resin-sealed element, since the bonding wire is directly wrapped in the resin, tensile stress is applied to the bonding wire due to heat generation during operation of the semiconductor element. This is because of the mold resin (for example, epoxy resin: 22-30 × 10 -6 / ° C), bonding wire (Cu: 17 × 10 -6 / ° C) and lead frame (42 alloy: 4.5 × 10 -6 / ° C). This is because the thermal expansion coefficients are so different that tensile stress acts on the bonding wires due to the difference in thermal expansion between them when a high temperature atmosphere is generated due to heat generation during operation of the semiconductor element.

【００１２】このような動作中の発熱冷却により生じる
繰返し引張応力が長時間にわたってボンディングワイヤ
である高純度Ｃｕに作用すると、Ａｌ電極上に接合した
Ｃｕボール直上部の結晶粒界からクラックが発生してク
リープ破断する。また、Ａｌ電極との接合部にはせん断
応力が作用し、接合界面からボンディングワイヤが剥離
し、配線のオープン不良を引き起こすことことがある。When the repetitive tensile stress generated by the heat generation and cooling during the operation acts on the high-purity Cu which is the bonding wire for a long time, cracks are generated from the crystal grain boundary just above the Cu ball bonded on the Al electrode. Creep rupture. In addition, shear stress may act on the joint with the Al electrode, and the bonding wire may peel off from the joint interface, causing an open defect of the wiring.

【００１３】本発明は、このような問題を解決するため
になされたもので、クリープ強さが良好で、かつボンデ
ィング性の優れたＣｕボンディングワイヤを提供するこ
とを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to provide a Cu bonding wire having a good creep strength and an excellent bonding property.

【００１４】[0014]

【問題点を解決するための手段と作用】本発明者らは、
高純度Ｃｕボンディングワイヤの問題点に関して鋭意検
討を重ねた結果、Ｃｕボンディングワイヤのクリープに
よる結晶粒界破断は、再結晶に伴う高温強度の低下が大
きな要因である事、またＣｕボールの硬化原因の一つは
ボール形成時にＣｕボール中に侵入する空気中の酸素に
よって酸化銅（Ｃｕ2 Ｏ）が形成されるためである事を
見出し、本発明を完成するに至った。[Means and Actions for Solving Problems] The present inventors
As a result of extensive studies on the problems of the high-purity Cu bonding wire, the crystal grain boundary rupture due to creep of the Cu bonding wire is mainly caused by the decrease in high temperature strength due to recrystallization, and the cause of hardening of the Cu ball. One reason is that copper oxide (Cu 2 O) is formed by oxygen in the air that penetrates into the Cu ball during ball formation, and the present invention has been completed.

【００１５】すなわち、本発明のボンディングワイヤ
は、 wtppmで、Ｚｒ，Ｈｆ，Ｔｉ，ＣｒおよびＭｎから
選ばれた１種または２種以上の元素を20〜560ppm、さら
にＳｂ，Ｐ，Ｌｉ，Ｓｎ，ＰｂおよびＣｄから選ばれた
１種または２種以上の元素を25〜250ppm、またはＡｓ，
Ｚｎ，Ｋ，Ｓｒ，Ｍｇ，ＣａおよびＴｌから選ばれた１
種または２種以上の元素を10〜650ppm含有し、残部実質
的にＣｕからなることを特徴とするものである。That is, the bonding wire of the present invention contains, in wtppm, 20 to 560 ppm of one or more elements selected from Zr, Hf, Ti, Cr and Mn, and further Sb, P, Li, Sn, 25 to 250 ppm of one or more elements selected from Pb and Cd, or As,
1 selected from Zn, K, Sr, Mg, Ca and Tl
One or two or more elements are contained in an amount of 10 to 650 ppm, and the balance substantially consists of Cu.

【００１６】以下に、本発明で規定する各元素の効果と
含有量の限定理由について説明する。The effects of each element specified in the present invention and the reasons for limiting the content will be described below.

【００１７】まず、Ｚｒ，Ｈｆ，Ｔｉ，ＣｒおよびＭｎ
は、微量の添加で転位の回復と再結晶時の粒界移動を遅
らせて再結晶温度を高め、Ｃｕボンディングワイヤの粒
界破断を防止する効果を発揮する元素である。あまりそ
の量が少ないと効果を発揮せず、逆にあまりその量が多
いとＣｕ中に固溶あるいは析出して著しく強度が増大
し、Ｃｕボールが硬化して半導体チップに損傷を与え、
かつ接合強度が低下してＣｕボールが剥離しやすくな
る。したがって、その含有量は20〜560wtppmとした。好
ましくは30〜450wtppm、さらに好ましくは40〜350wtppm
である。First, Zr, Hf, Ti, Cr and Mn
Is an element that exerts the effect of delaying the recovery of dislocations and the movement of grain boundaries during recrystallization by a small amount of addition, increasing the recrystallization temperature, and preventing the grain boundary rupture of the Cu bonding wire. If the amount is too small, the effect is not exerted. On the contrary, if the amount is too large, solid solution or precipitation occurs in Cu and the strength is remarkably increased, and the Cu ball is hardened to damage the semiconductor chip.
Moreover, the bonding strength is lowered and the Cu balls are easily peeled off. Therefore, the content is set to 20 to 560 wtppm. Preferably 30 to 450 wtppm, more preferably 40 to 350 wtppm
Is.

【００１８】また、Ｓｂ，Ｐ，Ｌｉ，Ｓｎ，Ｐｂおよび
Ｃｄは、Ｃｕボール形成時の侵入酸素と反応して酸化物
を生成し、これがＣｕボール中から蒸発するため、Ｃｕ
ボールを軟化する効果を発揮する元素である。あまりそ
の量が少ないと効果を発揮せず、逆にあまりその量が多
いとＣｕボール中に未反応の元素が残存し、Ｃｕボール
硬度を高め、Ｃｕボール変形能が低下する。したがっ
て、その含有量は25〜250wtppmとした。好ましくは35〜
200wtppm、さらに好ましくは50〜150wtppmである。Further, Sb, P, Li, Sn, Pb and Cd react with the invading oxygen at the time of Cu ball formation to generate an oxide, which evaporates from the Cu ball.
It is an element that exerts the effect of softening the ball. If the amount is too small, the effect is not exerted. On the contrary, if the amount is too large, unreacted elements remain in the Cu balls to increase the Cu ball hardness and reduce the Cu ball deformability. Therefore, its content is set to 25 to 250 wtppm. Preferably 35-
It is 200 wtppm, and more preferably 50 to 150 wtppm.

【００１９】また、Ａｓ，Ｚｎ，Ｋ，Ｓｒ，Ｍｇ，Ｃａ
およびＴｌは、Ｃｕボール形成時にＣｕ中から気化して
Ｃｕボール中への酸素侵入を阻止し、Ｃｕボール硬化を
防止する効果を発揮する元素である。あまりその量が少
ないと効果を発揮せず、逆にあまりその量が多いとＣｕ
ボール中に未反応の元素が残存し、Ｃｕボール硬度を高
め、Ｃｕボール変形能が低下する。したがって、その含
有量は10〜650wtppmとした。好ましくは20〜500wtppm、
さらに好ましくは30〜300wtppmである。Further, As, Zn, K, Sr, Mg, Ca
And Tl are elements that vaporize from the Cu during formation of the Cu balls to prevent oxygen from penetrating into the Cu balls, and to prevent the Cu balls from hardening. If the amount is too small, the effect will not be exhibited. Conversely, if the amount is too large, Cu
Unreacted elements remain in the balls, increasing the Cu ball hardness and decreasing the Cu ball deformability. Therefore, its content is set to 10 to 650 wtppm. Preferably 20-500 wtppm,
More preferably, it is 30 to 300 wtppm.

【００２０】上記Ｓｂ，Ｐ，Ｌｉ，Ｓｎ，ＰｂおよびＣ
ｄの各元素、またはＡｓ，Ｚｎ，Ｋ，Ｓｒ，Ｍｇ，Ｃａ
およびＴｌの各元素は、それぞれの群の元素の含有で本
発明の目的を達成することはできるが、それらの両方の
群の元素を各々含有しても良い。The above Sb, P, Li, Sn, Pb and C
Each element of d, or As, Zn, K, Sr, Mg, Ca
Although the elements of T1 and T1 can achieve the object of the present invention by containing the elements of their respective groups, they may contain the elements of both groups.

【００２１】さらに本発明においては、ボンディング性
を改善するために、Ｃｕ中に不純物として含有している
ＳおよびＯ量を減少させることが有効である。図２はオ
ージェ電子分光装置（ＡＥＳ）でＣｕボール表面から深
さ方向のＳおよびＯの分布状態を測定した結果である。
Ｃｕ中のＳおよびＯは、図２のＣｕボール表面からの不
純物分布曲線図に示すように、形成されたＣｕボール表
面に濃化偏析するため、ボンディング性の劣化を招く。
このため、それらの量はＳ≦１wtppm ，Ｏ≦２wtppm で
あることが好ましい。Further, in the present invention, in order to improve the bondability, it is effective to reduce the amounts of S and O contained as impurities in Cu. FIG. 2 shows the results of measuring the distribution state of S and O in the depth direction from the surface of the Cu ball by means of Auger electron spectroscopy (AES).
As shown in the impurity distribution curve diagram from the Cu ball surface in FIG. 2, S and O in Cu concentrate and segregate on the formed Cu ball surface, resulting in deterioration of the bonding property.
Therefore, their amounts are preferably S ≦ 1 wtppm and O ≦ 2 wtppm.

【００２２】上記、本発明のボンディングワイヤの製造
方法の一例としては、例えば、ゾーンメルティング法に
よって得た純度99.999wt％以上の高純度Ｃｕを素材とし
て、真空溶解により各含有元素を添加したインゴットを
作製する。そして、前記インゴットを冷間引抜加工など
の各種加工および焼鈍を繰返して、意図するボンディン
グワイヤを得る。As an example of the method for producing the bonding wire of the present invention, for example, an ingot in which each contained element is added by vacuum melting using high purity Cu having a purity of 99.999 wt% or more obtained by the zone melting method as a raw material. To make. Then, various processes such as cold drawing and annealing are repeated for the ingot to obtain the intended bonding wire.

【００２３】[0023]

【実施例】以下、具体的な実施例に基づいて本発明を説
明する。EXAMPLES The present invention will be described below based on specific examples.

【００２４】まず、ゾーンメルティング法によって得た
純度99.999wt％以上の高純度Ｃｕを素材として、表１に
示すように、純度99.9wt％以上の各種元素を添加した直
径20mmのインゴットを真空溶解により作製した。この直
径20mmの各インゴットを面削し、さらに直径１mmまで冷
間引抜加工後、 400℃で１時間焼鈍し、さらに冷間引抜
加工により直径25μｍの線材とした。次に線材を 300℃
で等温焼鈍を行い、試料とした。First, as shown in Table 1, a high-purity Cu having a purity of 99.999 wt% or more obtained by the zone melting method was used to vacuum-melt an ingot of 20 mm in diameter to which various elements having a purity of 99.9 wt% or more were added. It was produced by. Each ingot having a diameter of 20 mm was chamfered, cold drawn to a diameter of 1 mm, annealed at 400 ° C. for 1 hour, and further cold drawn to obtain a wire having a diameter of 25 μm. Next, wire the wire at 300 ℃
Isothermal annealing was carried out at to prepare a sample.

【００２５】[0025]

【表１】 得られた試料を用い、アルゴンと水素の混合還元ガス雰
囲気中で電気アークによりボールを形成し、半導体チッ
プ上のＡｌ電極と、Ａｇメッキを施したリードフレーム
にボンディングを行った。[Table 1] Using the obtained sample, a ball was formed by an electric arc in a mixed reducing gas atmosphere of argon and hydrogen, and the Al electrode on the semiconductor chip and the lead frame plated with Ag were bonded.

【００２６】そして、ボンディングワイヤとＡｌ電極部
との接合強度をプッシュ・テストで測定した。また、ボ
ンディングワイヤを剥離したＡｌ電極面を塩酸でエッチ
ングし、半導体チップ損傷の有無を光学顕微鏡により調
査した。これらの結果を表２に示す。Then, the bonding strength between the bonding wire and the Al electrode portion was measured by the push test. Also, the Al electrode surface from which the bonding wire was peeled off was etched with hydrochloric acid, and the presence or absence of damage to the semiconductor chip was examined by an optical microscope. Table 2 shows the results.

【００２７】また、配線した半導体素子を樹脂封止し、
高温放置試験（ 200℃×500hr ）と温度サイクル試験
（ -65℃×30min →25℃×５min → 200℃×30min を 1
00サイクル実施）を行った。その結果を併せて表２に示
す。Further, the wired semiconductor element is resin-sealed,
High temperature storage test (200 ℃ × 500hr) and temperature cycle test (-65 ℃ × 30min → 25 ℃ × 5min → 200 ℃ × 30min 1
00 cycles were carried out). The results are also shown in Table 2.

【００２８】[0028]

【表２】 上記表２より明らかなように、本発明の実施例は比較例
に比べ接合強度が高く、しかもチップ損傷は発生してお
らず、またワイヤ剥離さらにワイヤ断線は認められず、
優れたボンディング性およびクリープ強さを有している
ことが確認された。[Table 2] As is clear from Table 2 above, the examples of the present invention have higher bonding strength than the comparative examples, no chip damage occurs, and wire peeling and wire disconnection are not observed.
It was confirmed to have excellent bondability and creep strength.

【００２９】[0029]

【発明の効果】本発明によれば、クリープ強さが良好
で、かつボンディング性の優れたＣｕボンディングワイ
ヤを提供することができる。According to the present invention, it is possible to provide a Cu bonding wire having good creep strength and excellent bonding property.

【図面の簡単な説明】[Brief description of drawings]

【図１】樹脂封止型ＩＣを示す概略断面図である。FIG. 1 is a schematic cross-sectional view showing a resin-sealed IC.

【図２】Ｃｕボール表面からの不純物分布曲線図であ
る。FIG. 2 is an impurity distribution curve diagram from the surface of a Cu ball.

【符号の説明】[Explanation of symbols]

１ ダイフレーム ２ ペレット ３ リードフレーム ４ ボンディングワイヤ ５ 樹脂 1 Die frame 2 Pellet 3 Lead frame 4 Bonding wire 5 Resin

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 wtppmで、Ｚｒ，Ｈｆ，Ｔｉ，Ｃｒおよ
びＭｎから選ばれた１種または２種以上の元素を20〜56
0ppm、さらにＳｂ，Ｐ，Ｌｉ，Ｓｎ，ＰｂおよびＣｄか
ら選ばれた１種または２種以上の元素を25〜250ppm、ま
たはＡｓ，Ｚｎ，Ｋ，Ｓｒ，Ｍｇ，ＣａおよびＴｌから
選ばれた１種または２種以上の元素を10〜650ppm含有
し、残部実質的にＣｕからなることを特徴とするボンデ
ィングワイヤ。1. A wt ppm of 20 to 56 of one or more elements selected from Zr, Hf, Ti, Cr and Mn.
0 ppm, 25 to 250 ppm of one or more elements selected from Sb, P, Li, Sn, Pb and Cd, or 1 selected from As, Zn, K, Sr, Mg, Ca and Tl. A bonding wire containing 10 to 650 ppm of one kind or two or more kinds of elements, and the balance being substantially Cu. 【請求項２】 さらに wtppmで、Ｓ≦１ppm ，Ｏ≦２pp
m であることを特徴とする請求項１に記載のボンディン
グワイヤ。2. Further, in wtppm, S ≦ 1 ppm, O ≦ 2 pp
The bonding wire according to claim 1, wherein the bonding wire is m.
JP5196685A 1993-07-15 1993-07-15 Bonding wire Expired - Lifetime JPH0828382B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5196685A JPH0828382B2 (en) 1993-07-15 1993-07-15 Bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5196685A JPH0828382B2 (en) 1993-07-15 1993-07-15 Bonding wire

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP61165563A Division JPH0785484B2 (en) 1986-07-16 1986-07-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH06168974A JPH06168974A (en) 1994-06-14
JPH0828382B2 true JPH0828382B2 (en) 1996-03-21

Family

ID=16361897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5196685A Expired - Lifetime JPH0828382B2 (en) 1993-07-15 1993-07-15 Bonding wire

Country Status (1)

Country Link
JP (1) JPH0828382B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9668358B2 (en) * 2012-12-06 2017-05-30 Senju Metal Industry Co., Ltd. Cu ball
CN108962860B (en) * 2018-08-15 2020-10-16 芜湖长润特种铜线有限公司 Preparation method of oxidation-resistant bonding copper wire material

Also Published As

Publication number Publication date
JPH06168974A (en) 1994-06-14

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