JPH08283661A - Composition for coating layer - Google Patents

Composition for coating layer

Info

Publication number
JPH08283661A
JPH08283661A JP11112795A JP11112795A JPH08283661A JP H08283661 A JPH08283661 A JP H08283661A JP 11112795 A JP11112795 A JP 11112795A JP 11112795 A JP11112795 A JP 11112795A JP H08283661 A JPH08283661 A JP H08283661A
Authority
JP
Japan
Prior art keywords
composition
film
weight
sio
general formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11112795A
Other languages
Japanese (ja)
Inventor
Eiji Nishida
英治 西田
Umio Maeda
海夫 前田
Hideo Kubo
英夫 久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Soda Co Ltd
Original Assignee
Nippon Soda Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Soda Co Ltd filed Critical Nippon Soda Co Ltd
Priority to JP11112795A priority Critical patent/JPH08283661A/en
Publication of JPH08283661A publication Critical patent/JPH08283661A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain a composition which can form a coated layer which is thick, transparent and smooth and has excellent electrical insulating properties free from cracking and leveling reduction and high resistance to abrasion, weathering and corrosion. CONSTITUTION: This composition comprises (A) a copolymer prepared by hydrolytic polycondensation reaction between (a) 100 pts.wt. of an alkylalkoxy-silane of the general formula: Rn Si(OR<1> )4-n0 (R, R<1> are each a 1-8C alkyl, n is 1 or 2) and (b) 0.1-20 pts.wt. of a tetraalkoxy-silane given by the general formula: Si(OR<2> )4 (R<2> is a 1-8C alkyl) and (B) microfine silica particles with an average particle size of >=0.01μm.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はガラス製品、金属製品、
プラスチック製品、セラミック製品等に電気絶縁性、耐
磨耗性、耐候性、耐蝕性等の特性を付与する目的で、製
品の表面に塗布される被覆用組成物に関する。本発明に
おいて、従来よりも膜厚が厚く、透明で平滑な被膜を製
品表面に形成することができるので、広範囲の分野での
利用が期待できる。
The present invention relates to glass products, metal products,
The present invention relates to a coating composition applied to the surface of a plastic product, a ceramic product or the like for the purpose of imparting properties such as electric insulation, abrasion resistance, weather resistance and corrosion resistance. In the present invention, since a transparent and smooth film having a larger film thickness than before can be formed on the product surface, it can be expected to be used in a wide range of fields.

【0002】[0002]

【従来の技術】各種製品表面に上記の特性を付与する目
的で使用されるものとしては、有機アルコキシシランの
部分縮合物にコロイド状シリカを配合した組成物が知ら
れている(特開昭59−68377号、特開昭62−7
9274号) 。また、特開平1−306476号にはア
ルキルトリアルコキシシラン100重量部とテトラアル
コキシシラン20〜130重量部との部分縮合物にシリ
カ微粒子を配合させた組成物が記載されている。さらに
また、特開平2−3468号には上記部分縮合物にチタ
ニア微粒子を配合させた組成物が記載されている。
2. Description of the Related Art Compositions in which colloidal silica is mixed with a partial condensate of an organoalkoxysilane are known to be used for the purpose of imparting the above-mentioned properties to the surface of various products (JP-A-59). -68377, JP-A-62-7
9274). Further, JP-A-1-306476 discloses a composition in which silica fine particles are mixed with a partial condensate of 100 parts by weight of alkyltrialkoxysilane and 20 to 130 parts by weight of tetraalkoxysilane. Furthermore, JP-A-2-3468 describes a composition in which titania fine particles are mixed with the above partial condensate.

【0003】[0003]

【発明が解決しようとする課題】集積回路モジュール用
として、セラミック基板は、シリコン基板、ガラス基板
と共に広く採用されているが、高硬度の無機化合物結晶
の焼結体であるため、その表面の平滑度が低くシリコン
基板、ガラス基板に比較して回路集積度の低いモジュー
ルしか得られない。この欠点を解消するために、機械的
な研磨法を採用するのが一般的であるが、結晶粒の欠損
や結晶粒界に沿ってのクラックの発生が避け難くその研
磨は極めて困難である。SiO2薄膜形成法は、機械研磨法
の欠点を解消するものとして提案されたが、組成物のレ
ベリング性が不足し、かつ、一回の塗布焼成で形成可能
なSiO2薄膜の膜厚が極めて薄いため、平滑表面を得るに
は、塗布焼成の繰り返し回数を大きくする必要がある。
一方、ガラス基板表面あるいは磁性材料表面に優れた電
気絶縁性等の特性を付与するために、数〜数10μm の
膜厚を持った、高硬度の膜が要求されている。上記目的
で実用性の高い特性を得るには、400℃以上の焼成温
度が要求されている。ところが、前記の有機アルコキシ
の部分縮合物にシリカ微粒子やチタニア微粒子を配合さ
せた組成物を使用して塗布焼成法により絶縁膜を形成す
る場合、400℃以上の温度で焼成するとクラックの発
生が避け難く、1μm以上の高硬度で平滑な被膜を得る
ことは極めて困難であった。
Ceramic substrates, which are widely used together with silicon substrates and glass substrates for integrated circuit modules, have a smooth surface because they are sintered bodies of high hardness inorganic compound crystals. Only a module having a low degree of circuit integration and a low degree of circuit integration can be obtained compared to a silicon substrate or a glass substrate. In order to eliminate this drawback, it is common to employ a mechanical polishing method, but it is very difficult to polish because it is unavoidable that defects of crystal grains and cracks along crystal grain boundaries occur. The SiO 2 thin film forming method has been proposed as a solution to the drawbacks of the mechanical polishing method, but the leveling property of the composition is insufficient, and the thickness of the SiO 2 thin film that can be formed by one-time application and firing is extremely high. Since it is thin, it is necessary to increase the number of repetitions of coating and firing in order to obtain a smooth surface.
On the other hand, in order to impart excellent electrical insulation properties to the surface of the glass substrate or the surface of the magnetic material, a high hardness film having a film thickness of several to several 10 μm is required. To obtain highly practical properties for the above purpose, a firing temperature of 400 ° C. or higher is required. However, when an insulating film is formed by a coating firing method using a composition in which silica fine particles or titania fine particles are mixed with the above-mentioned organic alkoxy partial condensate, cracking is avoided by firing at a temperature of 400 ° C. or higher. It was difficult to obtain a highly hard and smooth coating film having a hardness of 1 μm or more.

【0004】[0004]

【課題を解決するための手段】本発明者等は、前記目的
を達成すべく鋭意研究した結果、特定の重量比のアルキ
ルアルコキシシランとテトラアルコキシシランとを加水
分解縮重合した共重合体とシリカ微粒子を含有した組成
物を用い、塗布焼成することにより、クラックが発生す
ることなく、基材表面に1μm以上の高硬度で平滑な被
膜が形成されることを見出し、本発明を完成した。
Means for Solving the Problems As a result of intensive studies aimed at achieving the above-mentioned object, the present inventors have found that a copolymer obtained by hydrolyzing and polycondensing an alkylalkoxysilane and a tetraalkoxysilane in a specific weight ratio and silica. The present invention has been completed by finding that a smooth coating film having a high hardness of 1 μm or more can be formed on the surface of a base material without cracks by coating and baking the composition containing fine particles.

【0005】本発明は、アルキルアルコキシシラン10
0重量部とテトラアルコキシシラン20重量部以下とを
加水分解縮重合した共重合体と、平均粒径が0.01μ
m以上のシリカ微粒子を含有することを特徴とする被覆
用組成物である。
The present invention is directed to alkylalkoxysilanes 10
A copolymer obtained by hydrolysis-polycondensation of 0 parts by weight and 20 parts by weight or less of tetraalkoxysilane, and an average particle size of 0.01 μ.
A coating composition containing silica fine particles of m or more.

【0006】本発明において、アルキルアルコキシシラ
ン(以下、「AAS」と記す。)は、 一般式: Rn Si(OR1)4-n────────────(1) で表され、式中のRおよびR1 は、炭素数1〜8のアル
キル基、たとえば、メチル基、エチル基、プロピル基、
イソプロピル基、ノルマルブチル基、ノルマルヘキシル
基、2−エチルヘキシル基等であり、RおよびR1 は、
同一でも相異なっていてもよく、nが1または2である
シラン化合物である。
In the present invention, an alkylalkoxysilane (hereinafter referred to as “AAS”) is represented by the general formula: R n Si (OR 1 ) 4-n ───────────── (1) And R and R 1 in the formula are alkyl groups having 1 to 8 carbon atoms, for example, methyl group, ethyl group, propyl group,
Isopropyl group, normal butyl group, normal hexyl group, 2-ethylhexyl group and the like, and R and R 1 are
The silane compounds may be the same or different and n is 1 or 2.

【0007】反応性を考慮すると、Rが、1〜4のアル
キル基、たとえば、メチルトリメトキシシラン、メチル
トリエトキシシラン、メチルトリイソプロポキシシラ
ン、メチルトリブトキシシラン、エチルトリメトキシシ
ラン、エチルトリエトキシシラン、エチルトリイソロポ
キシシラン、エチルトリブトキシシラン、イソプロピル
トリメトキシシラン、イソプロピルトリエトキシシラ
ン、イソプロピルトリイソプロポキシシラン、イソプロ
ピルトリブトキシシラン、ジメチルジメトキシシラン、
ジメチルジエトキシシラン、ジメチルジイソプロポキシ
シラン、ジメチルジブトキシシラン、ジエチルジメトキ
シシラン、ジエチルジエトキシシラン、ジエチルジイソ
プロポキシシラン、ジエチルジブトキシシラン、ジイソ
プロピルジメトキシシラン、ジイソプロピルジエトキシ
シラン、ジイソプロピルジイソプロポキシシラン、ジイ
ソプロピルジブトキシシラン等が好ましく使用される。
In consideration of reactivity, R is an alkyl group having 1 to 4 such as methyltrimethoxysilane, methyltriethoxysilane, methyltriisopropoxysilane, methyltributoxysilane, ethyltrimethoxysilane and ethyltriethoxy. Silane, ethyltriisolopoxysilane, ethyltributoxysilane, isopropyltrimethoxysilane, isopropyltriethoxysilane, isopropyltriisopropoxysilane, isopropyltributoxysilane, dimethyldimethoxysilane,
Dimethyldiethoxysilane, dimethyldiisopropoxysilane, dimethyldibutoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, diethyldiisopropoxysilane, diethyldibutoxysilane, diisopropyldimethoxysilane, diisopropyldiethoxysilane, diisopropyldiisopropoxysilane , Diisopropyldibutoxysilane and the like are preferably used.

【0008】一方、テトラアルコキシシラン(以下、
「TAS」と記す。)は、 一般式:Si(OR2)4───────────────(2) で表され、式中のR2 が、前記一般式(1)中のRおよ
びR1 と同種のアルキル基であるシラン化合物である。
たとえば、テトラメトキシシラン、テトラエトキシシラ
ン、テトライソプロポキシシラン、テトラブトキシシラ
ン等がさらに好ましく使用される。
On the other hand, tetraalkoxysilane (hereinafter,
It is written as "TAS". ) Is represented by the general formula: Si (OR 2 ) 4 ─────────────── (2), wherein R 2 in the formula is R in the general formula (1). And a silane compound having the same alkyl group as R 1 .
For example, tetramethoxysilane, tetraethoxysilane, tetraisopropoxysilane, tetrabutoxysilane and the like are more preferably used.

【0009】AASとTASとの共重合体は、前記AA
SとTASとの混合比が、前者100重量部に対し、後
者0.1〜20重量部、好ましくは5〜20重量部の混
合物を加水分解し、縮重合することにより合成すること
ができる。TASの混合比が20重量部を越えると40
0℃以上で焼成して得られた被膜にクラックが入り易
く、数μm以上の高硬度で平滑な被膜が得られない。通
常、この合成反応は、塩酸、硫酸、スルホン酸、リン
酸、ほう酸等の酸触媒の存在下に、加温して行う。
The copolymer of AAS and TAS is the above-mentioned AA
The mixture can be synthesized by hydrolyzing and polycondensing a mixture of S and TAS in a mixing ratio of 0.1 to 20 parts by weight, preferably 5 to 20 parts by weight with respect to 100 parts by weight of the former. 40 if the mixing ratio of TAS exceeds 20 parts by weight.
The film obtained by baking at 0 ° C. or higher is likely to have cracks, and a film having a high hardness of several μm or more and a smooth surface cannot be obtained. Usually, this synthetic reaction is carried out by heating in the presence of an acid catalyst such as hydrochloric acid, sulfuric acid, sulfonic acid, phosphoric acid or boric acid.

【0010】シリカ微粒子は、平均粒径0.01μm以
上のシリカ粒子、シリカ微粒子を分散媒に分散したシリ
カゾルのいずれでもよい。好ましくは、平均粒径0.0
1〜10μmのシリカゾルである。
The silica fine particles may be either silica particles having an average particle diameter of 0.01 μm or more, or silica sol in which silica fine particles are dispersed in a dispersion medium. Preferably, the average particle size is 0.0
It is a silica sol of 1 to 10 μm.

【0011】組成物の溶媒としては、特に制限はない
が、たとえば、エタノール、n−ブタノール、2−エチ
ルヘキサノールなどのアルコール類、酢酸エチル、酢酸
ブチルなどのエステル類、ジ−n−ブチルエーテル、ジ
エチレングリコールモノブチルエーテルなどのエーテル
類等が挙げられる。
The solvent of the composition is not particularly limited, but for example, alcohols such as ethanol, n-butanol and 2-ethylhexanol, esters such as ethyl acetate and butyl acetate, di-n-butyl ether and diethylene glycol. Examples thereof include ethers such as monobutyl ether.

【0012】本発明の組成物は、AAS 100重量部
とTAS 20重量部以下の共重合体の有機溶媒溶液に
0.01μm以上のシリカ粒子を均一に分散したもの
で、組成物中の共重合体とシリカの混合比は、形成させ
ようとする被膜の厚みや組成物の塗布方法によって任意
に選ぶことができるが、1μm以上の高硬度で平滑な被
膜を得ようとする場合には、AASとTASの共重合体
を SiO2 に換算して、その100重量部に対してシリカ
微粒子10〜500重量部の混合比が好ましい。
The composition of the present invention is obtained by uniformly dispersing silica particles of 0.01 μm or more in an organic solvent solution of a copolymer of 100 parts by weight of AAS and 20 parts by weight of TAS or less. The mixing ratio of coalesce and silica can be arbitrarily selected depending on the thickness of the coating film to be formed and the coating method of the composition, but in the case of obtaining a smooth coating film with high hardness of 1 μm or more, AAS A mixing ratio of 10 to 500 parts by weight of silica fine particles is preferable with respect to 100 parts by weight of the copolymer of and TAS converted into SiO 2 .

【0013】基材表面への塗布方法には特に制限はな
く、浸漬引き上げ法(ディッピング法)、スプレー、ロ
ールコーター、ハケ塗り等の任意の手段で行うことがで
きるが、均一な膜厚の塗膜が得られ、大量生産が可能な
ディッピング法が好ましく採用される。
The method of coating the surface of the substrate is not particularly limited, and it can be applied by any means such as a dipping and lifting method (dipping method), spraying, a roll coater, and brush coating, but coating with a uniform film thickness is possible. A dipping method that can obtain a film and enables mass production is preferably adopted.

【0014】[0014]

【実施例】本発明を、実施例をあげて詳細に説明する。
ただし、本発明は、以下の実施例によりなんらの制限を
受けるものではない。
EXAMPLES The present invention will be described in detail with reference to examples.
However, the present invention is not limited to the following examples.

【0015】実施例1 テトラエトキシシラン18.7g、メチルトリエトキシ
シラン144.3g、0.0 5N塩酸水溶液5.4g
を反応容器に仕込み、還流下に1時間攪拌保持し、テト
ラエトキシシランとメチルトリエトキシシランの共重合
体溶液を得た。得られた共重合体溶液に、イプロピルア
ルコール分散型シリカゾルの混合物(平均粒径0.05
μm)177 .4gを加え、還流下さらに1時間攪拌
保持して、SiO2 に換算した濃度が29重量%の組成
物(1)を得た。ついで、n−ブタノール59.9gを
加え、SiO2 に換算した濃度が25重量%のSiO2
膜形成用組成物(A)を得た。
Example 1 Tetraethoxysilane 18.7 g, methyltriethoxysilane 144.3 g, 0.05N hydrochloric acid aqueous solution 5.4 g
Was charged in a reaction vessel, and the mixture was stirred and held under reflux for 1 hour to obtain a copolymer solution of tetraethoxysilane and methyltriethoxysilane. To the obtained copolymer solution, a mixture of ipropyl alcohol-dispersed silica sol (average particle size of 0.05
μm) 177. 4 g was added, and the mixture was further stirred and held under reflux for 1 hour to obtain a composition (1) having a concentration of 29% by weight calculated as SiO 2 . Then, 59.9 g of n-butanol was added, and the concentration converted to SiO 2 was 25% by weight of SiO 2
A film forming composition (A) was obtained.

【0016】実施例2〜12 実施例1で得られた組成物(1)に、n−ブタノールの
代わりに各種希釈剤を加え、第1表に示すSiO2 換算
濃度が25重量%のSiO2 膜形成用組成物(B)〜
(L)を得た。
[0016] Examples 2 to 12 The composition obtained in Example 1 in (1), n-butanol various diluents added instead of, SiO 2 conversion concentration shown in Table 1 is 25% by weight of SiO 2 Film forming composition (B)
(L) was obtained.

【0017】実施例13、14 組成物(A)の調製において使用したシリカゾルの混合
物の量を2倍、またn−ブタノールの量を99.0gに
変更した以外は、実施例1と同様な方法によりSiO2
膜形成用組成物(M)を得た。同様に、シリカゾルの混
合物の量を3倍、またn−ブタノールの量を138.0
gとしてSiO2 膜形成用組成物(N)を得た。
Examples 13 and 14 A method similar to Example 1 except that the amount of the silica sol mixture used in the preparation of the composition (A) was doubled and the amount of n-butanol was changed to 99.0 g. Due to SiO 2
A film forming composition (M) was obtained. Similarly, the amount of the silica sol mixture was tripled, and the amount of n-butanol was 138.0.
A composition (N) for forming a SiO 2 film was obtained as g.

【0018】実施例15 実施例1で得られたテトラエトキシシランとメチルトリ
エトキシシランの共重合体溶液に実施例1よりも平均粒
径の大きいイプロピルアルコール分散型シリカゾルの混
合物(平均粒径0.33μm)182.8gを加え、還
流下で1時間攪拌保持して、SiO2 換算濃度が30重
量%の組成物を得た。ついで、n−ブタノール75.8
gを加え、SiO2 換算濃度が25重量%のSiO2
形成用組成物(O)を得た。
Example 15 In the copolymer solution of tetraethoxysilane and methyltriethoxysilane obtained in Example 1, a mixture of ipropyl alcohol-dispersed silica sol having an average particle size larger than that of Example 1 (average particle size 0 (.33 μm) 182.8 g was added, and the mixture was stirred and held under reflux for 1 hour to obtain a composition having a SiO 2 conversion concentration of 30% by weight. Then, n-butanol 75.8
g was added to obtain a SiO 2 film-forming composition (O) having a SiO 2 conversion concentration of 25% by weight.

【0019】実施例16 実施例15で得られたSiO2 換算濃度が30重量%の
組成物から、反応で生成した 低沸点アルコールを留去
して、SiO2 換算濃度が35重量%の組成物を得た。
ついで n−ブタノール54.0gを加え、SiO2
算濃度が30重量%のSiO2 膜形成用組成物(P)を
得た
Example 16 A composition having a SiO 2 -equivalent concentration of 35% by weight was obtained by distilling off the low boiling point alcohol produced by the reaction from the composition having a SiO 2 -equivalent concentration of 30% by weight obtained in Example 15. Got
Then, 54.0 g of n-butanol was added to obtain a SiO 2 film-forming composition (P) having a SiO 2 conversion concentration of 30% by weight.

【0020】比較例1 組成物(A)の調製において使用したテトラエトキシシ
ランの量を74.8g,メチルトリエトキシシランの量
を96.2gに、また、n−ブタノールの量を51.9
gに変更した以外は実施例1と同様な方法で、SiO2
膜形成用組成物(Q)を得た。
Comparative Example 1 The amount of tetraethoxysilane used in the preparation of the composition (A) was 74.8 g, the amount of methyltriethoxysilane was 96.2 g, and the amount of n-butanol was 51.9.
In the same manner as in Example 1 except that the content of SiO 2 was changed to g
A film forming composition (Q) was obtained.

【0021】比較例2 テトラメトキシシランの部分縮合物(日本曹達(株)製
の「アトロンNSi−500」)をSiO2 膜形成用組
成物(R)とした。
Comparative Example 2 A partial condensate of tetramethoxysilane (“Atron NSi-500” manufactured by Nippon Soda Co., Ltd.) was used as a SiO 2 film forming composition (R).

【0022】実施例および比較例の各組成を第1表にま
とめた。
The compositions of the examples and comparative examples are summarized in Table 1.

【0023】[0023]

【表1】 [Table 1]

【0024】試験例 洗浄したソーダライムガラスに、SiO2 膜形成用組成
物(A)をディッピング法により塗布した後、500℃
で30分間焼成して、ガラス基板表面にSiO 2 膜を形
成した。得られたSiO2 膜について、目視により表面
状態観察および薄膜段差測定器(小坂 研究所製、ET
−10型)により膜厚を測定した。試験結果を第2表に
示す。
Test Example A cleaned soda lime glass was coated with SiO 2.2Film forming composition
After applying the material (A) by the dipping method, 500 ° C
On the glass substrate surface for 30 minutes 2Shape the membrane
I made it. SiO obtained2Visually check the surface of the film
Condition observation and thin film step measuring instrument (Kosaka Laboratory, ET
-10 type) to measure the film thickness. Table 2 shows the test results
Show.

【0025】[0025]

【表2】 [Table 2]

【0026】[0026]

【発明の効果】本発明の被覆用組成物は、各種基材の表
面に、電気絶縁性、耐磨耗性、耐候性、耐蝕性等の特性
を付与するばかりでなく、従来よりも厚膜の、透明で平
滑な被膜を形成できることを特徴とする。また、組成物
中のシリカ微粒子の平均粒径および/または配合量を調
節することによって、任意の膜厚の被膜を得ることがで
き、厚膜形成時に問題となっていたクラックの発生およ
びレベリング性の低下もないため、表面状態が粗い基材
あるいは優れた電気絶縁性等の特性を要求される基材へ
の被覆において、優れた効果を発揮する。
The coating composition of the present invention not only imparts electrical insulating properties, abrasion resistance, weather resistance, corrosion resistance and other properties to the surface of various substrates, but also provides a thicker film than before. It is characterized in that a transparent and smooth film can be formed. Further, by adjusting the average particle size and / or the compounding amount of the silica fine particles in the composition, a coating film having an arbitrary film thickness can be obtained, and crack generation and leveling property, which are problems when forming a thick film, are caused. Since it does not decrease, it exhibits an excellent effect in coating a substrate having a rough surface condition or a substrate required to have characteristics such as excellent electric insulation.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 下記(a)および(b)を含有すること
を特徴とする被覆用組成物。 (a)一般式 Rn Si(OR1)4-n (R、R1 は炭素数1〜8のアルキル基、nは1または
2を表す)で表されるアルキルアルコキシシラン100
重量部と、 一般式 Si(OR2)4 (R2 は炭素数1〜8のアルキル基を表す)で表される
テトラアルコキシシラン0.1〜20重量部とを加水分
解縮重合した共重合体 (b) 平均粒径が0.01μm以上のシリカ微粒子
1. A coating composition comprising the following (a) and (b): (A) Alkylalkoxysilane 100 represented by the general formula R n Si (OR 1 ) 4-n (R and R 1 are alkyl groups having 1 to 8 carbon atoms, and n is 1 or 2).
Copolymerization by hydrolytic polycondensation of 0.1 to 20 parts by weight of tetraalkoxysilane represented by the general formula Si (OR 2 ) 4 (R 2 represents an alkyl group having 1 to 8 carbon atoms). Coalescence (b) Silica fine particles having an average particle size of 0.01 μm or more
JP11112795A 1995-04-12 1995-04-12 Composition for coating layer Pending JPH08283661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11112795A JPH08283661A (en) 1995-04-12 1995-04-12 Composition for coating layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11112795A JPH08283661A (en) 1995-04-12 1995-04-12 Composition for coating layer

Publications (1)

Publication Number Publication Date
JPH08283661A true JPH08283661A (en) 1996-10-29

Family

ID=14553134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11112795A Pending JPH08283661A (en) 1995-04-12 1995-04-12 Composition for coating layer

Country Status (1)

Country Link
JP (1) JPH08283661A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997035939A1 (en) * 1996-03-25 1997-10-02 Catalysts & Chemicals Industries Co., Ltd. Coating fluid for low-permittivity silica coating and substrate provided with low-permittivity coating
WO2000012640A1 (en) * 1998-09-01 2000-03-09 Catalysts & Chemicals Industries Co., Ltd. Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film
WO2000018847A1 (en) * 1998-09-25 2000-04-06 Catalysts & Chemicals Industries Co., Ltd. Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film
JP2001226635A (en) * 2000-02-10 2001-08-21 Sakai Chem Ind Co Ltd Paint, method of forming coating film, and coating film formed by the method
WO2007148684A1 (en) 2006-06-20 2007-12-27 Nof Corporation Inorganic-organic hybrid composition and use thereof
WO2008139920A1 (en) 2007-05-08 2008-11-20 Central Glass Company, Limited Coating fluid applicable by hand for sol-gel film formation
US8034417B2 (en) 2003-09-26 2011-10-11 Lintec Corporation Process film for use in producing ceramic green sheet and method for production thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997035939A1 (en) * 1996-03-25 1997-10-02 Catalysts & Chemicals Industries Co., Ltd. Coating fluid for low-permittivity silica coating and substrate provided with low-permittivity coating
US6261357B1 (en) 1996-03-25 2001-07-17 Catalysts & Chemicals Industries Co., Ltd. Coating liquid for forming low-permittivity silica film and substrate having low-permittivity coating film
WO2000012640A1 (en) * 1998-09-01 2000-03-09 Catalysts & Chemicals Industries Co., Ltd. Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film
WO2000018847A1 (en) * 1998-09-25 2000-04-06 Catalysts & Chemicals Industries Co., Ltd. Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film
US6451436B1 (en) 1998-09-25 2002-09-17 Catalysts & Chemicals Industries Co., Ltd. Coating liquid for forming a silica-containing film with a low-dielectric constant and substrate coated with such a film
JP2001226635A (en) * 2000-02-10 2001-08-21 Sakai Chem Ind Co Ltd Paint, method of forming coating film, and coating film formed by the method
US8034417B2 (en) 2003-09-26 2011-10-11 Lintec Corporation Process film for use in producing ceramic green sheet and method for production thereof
WO2007148684A1 (en) 2006-06-20 2007-12-27 Nof Corporation Inorganic-organic hybrid composition and use thereof
US8399558B2 (en) 2006-06-20 2013-03-19 Nof Corporation Inorganic-organic hybrid composition and use thereof
WO2008139920A1 (en) 2007-05-08 2008-11-20 Central Glass Company, Limited Coating fluid applicable by hand for sol-gel film formation
US8299169B2 (en) 2007-05-08 2012-10-30 Central Glass Company, Limited Coating fluid applicable by hand for sol-gel film formation

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