JPH08271921A - Liquid crystal device and its production - Google Patents

Liquid crystal device and its production

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Publication number
JPH08271921A
JPH08271921A JP7670895A JP7670895A JPH08271921A JP H08271921 A JPH08271921 A JP H08271921A JP 7670895 A JP7670895 A JP 7670895A JP 7670895 A JP7670895 A JP 7670895A JP H08271921 A JPH08271921 A JP H08271921A
Authority
JP
Japan
Prior art keywords
liquid crystal
electrode
auxiliary electrode
metal auxiliary
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7670895A
Other languages
Japanese (ja)
Inventor
Hirotaka Kawada
浩孝 川田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP7670895A priority Critical patent/JPH08271921A/en
Publication of JPH08271921A publication Critical patent/JPH08271921A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To provide a high precision liquid crystal device which attains a high quality display by a simple matrix method by flattening a step between a transparent electrode and a metal auxiliary electrode by using a transparent film. CONSTITUTION: A metal film is formed on an ITO electrode 6 having a specified electrode pattern on a glass substrate 7 and a photoresist is applied on it. The photoresist is exposed to light for the pattern of a metal auxiliary electrode and developed to obtain an etching resist 201. Then the metal is etched to form a metal auxiliary electrode 5. Further, a SiO2 film as a transparent film having almost same thickness as that of the metal auxiliary electrode 5 is formed on the substrate 7, and the etching resist 201 is peeled. In this process, the SiO2 film 202 on the etching resist 201 is also peeled with the etching resist 201, so that the step between the ITO electrode 6 and the metal auxiliary electrode 5 is flattened in the obtd. electrode substrate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、液晶を用いた表示装置
に関するものであり、特に双安定性スイッチングを利用
して単純マトリクス駆動される液晶装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display device using a liquid crystal, and more particularly to a liquid crystal device driven by a simple matrix using bistable switching.

【0002】[0002]

【従来の技術】現在、OA機器の表示装置等として実用
化されている液晶装置は、ツイストネマティック(T
N)型液晶もしくはスーパーツイストネマティック(S
TN)型液晶を用いている。例えば、M.Schadt and W.H
elfrich: Appl. Phys. Lett.18(1971)127, あるいは T.
J.Scheffer and J.Nehring: Appl. Phys.Lett.45(1984)
1021.に示されているこれらの表示方式はメモリー効果
を持たないため、電圧平均化法による単純マトリクス駆
動法または各画素にトランジスタ等のアクティブ素子を
設けたアクティブマトリクス駆動法によって駆動され
る。
2. Description of the Related Art Liquid crystal devices currently in practical use as display devices for OA equipment are twisted nematic (T).
N) type liquid crystal or super twist nematic (S
A TN) type liquid crystal is used. For example, M.Schadt and WH
elfrich: Appl. Phys. Lett. 18 (1971) 127, or T.
J. Scheffer and J. Nehring: Appl. Phys. Lett. 45 (1984)
Since these display methods shown in 1021. do not have a memory effect, they are driven by a simple matrix driving method by a voltage averaging method or an active matrix driving method in which an active element such as a transistor is provided in each pixel.

【0003】この他に、まだ実用化はされていないが、
様々な方式が研究されている。例えば、特公平1-51818
及び USP 4,239,345、特公平3-26368、特開昭59-58420
には双安定性スイッチングを用いる方式が開示されてい
る。
Besides this, although it has not been put to practical use yet,
Various methods have been studied. For example, Japanese Patent Publication 1-51818
And USP 4,239,345, Japanese Examined Patent Publication No. 3-26368, JP-A-59-58420.
Discloses a method using bistable switching.

【0004】双安定性あるいは複数の安定状態を有する
動作モードに関しては、それらの状態間を適当な電圧波
形で選択的にスイッチング出来る場合において走査線数
の多い高精細表示に適する訳であるが、それぞれに特有
の問題点を持っている。
Regarding an operation mode having bistability or a plurality of stable states, it is suitable for high-definition display with a large number of scanning lines when it is possible to selectively switch between these states with an appropriate voltage waveform. Each has its own problems.

【0005】例えば、特公平1-51818 及びUSP 4,239,34
5 に開示されている技術は双安定性を持っているため、
アクティブ素子を用いなくても、いったん書き込んだ情
報を長時間保持することができる。ところが、2つの安
定な状態間のスイッチングは、基本的には印加電圧の急
激な遮断と約1秒間にわたる緩慢な降下によって行われ
るため、単純マトリクス駆動には適さず、書き込み速度
も非常に遅い。事実、特公平1-51818 にはスイッチング
原理が記載されているのみであり、単純マトリクス駆動
する方法は開示されていない。
For example, Japanese Patent Publication 1-51818 and USP 4,239,34
Since the technology disclosed in 5 has bistability,
Information that has been written can be retained for a long time without using an active element. However, since switching between the two stable states is basically performed by abrupt cutoff of the applied voltage and a slow drop for about 1 second, it is not suitable for simple matrix driving, and the writing speed is very slow. In fact, Japanese Patent Publication No. 1-51818 only describes the switching principle, and does not disclose a simple matrix driving method.

【0006】単純マトリクス駆動により2つの安定な状
態間のスイッチングを実現する技術は、例えば特開平6-
230751に開示されている。特開平6-230751に開示されて
いる技術は、電圧を印加する前の初期状態においてφr
のツイスト角を成すカイラルネマティック液晶を備えた
液晶装置に、フレデリクス転移を生じさせるための、初
期状態及びツイスト角が各々略(φr+180°)と略
(φr−180°)である2つの準安定状態における閾
値以上の電圧を付与するリセットパルスと、リセットパ
ルス印加後の液晶を前記2つの準安定状態のいずれか一
方に移行させるための、前記2つの準安定状態のいずれ
かを生ずる臨界値を基準として選択付与される選択パル
スとを印加するものである。
A technique for realizing switching between two stable states by simple matrix driving is disclosed in, for example, Japanese Patent Laid-Open No.
No. 230751. The technique disclosed in Japanese Patent Laid-Open No. 6-230751 is φr in the initial state before voltage is applied.
In a liquid crystal device including a chiral nematic liquid crystal having a twist angle of, the initial state and the two metastable states in which the twist angle is approximately (φr + 180 °) and approximately (φr−180 °) for causing the Freedericksz transition And a reset pulse for applying a voltage equal to or higher than a threshold value, and a threshold value for causing either of the two metastable states to shift the liquid crystal after application of the reset pulse to one of the two metastable states. And a selection pulse selectively applied as.

【0007】上記及び本発明に適用される様な双安定性
あるいは複数の安定状態を有する動作モードにおいて
は、上記2つの準安定状態間のスイッチングは基本的に
パルス応答であるため駆動波形に強く依存する。そのた
め、大画面及び高精細表示を行うには駆動波形を維持さ
せるため電極の低抵抗化が要求され、ITO(Indium T
inOxide)電極上に金属補助電極を形成する方法がとら
れていた。
In the operation mode having bistable or a plurality of stable states as applied to the above and the present invention, the switching between the two metastable states is basically a pulse response and therefore strongly affects the driving waveform. Dependent. Therefore, in order to maintain a drive waveform in order to perform a large screen and high-definition display, it is necessary to lower the resistance of the electrodes, and the ITO (Indium TFT)
inOxide) a method of forming a metal auxiliary electrode on the electrode has been adopted.

【0008】[0008]

【発明が解決しようとする課題】図4に示すように金属
補助電極(5)をITO電極(6)上に形成すると、I
TO電極(6)と金属補助電極(5)との間に金属補助
電極の厚さ100〜200nm程度の段差が生じる。こ
れらの金属補助電極を施した基板を用いて液晶パネルを
形成すると、画素を構成する部分にITO電極−ITO
電極間(d1)、ITO電極−金属補助電極間(d
2)、金属補助電極−金属補助電極間(d3)の3種類
のセルギャップができる。そのため、ギャップ材は金属
補助電極が互いに対向する部分でセル厚を維持すること
になり、画素内にはセル厚維持に寄与しない浮遊してい
る状態のギャップ材が存在し、この浮遊ギャップ材を核
としたドメインが発生して表示品位を低下させるという
問題が生じている。
When the metal auxiliary electrode (5) is formed on the ITO electrode (6) as shown in FIG.
A step having a thickness of the metal auxiliary electrode of about 100 to 200 nm is formed between the TO electrode (6) and the metal auxiliary electrode (5). When a liquid crystal panel is formed by using the substrate provided with these metal auxiliary electrodes, the ITO electrode-ITO is formed on the portion forming the pixel.
Between electrodes (d1), between ITO electrode and metal auxiliary electrode (d
2), three types of cell gaps are formed between the metal auxiliary electrode and the metal auxiliary electrode (d3). Therefore, the gap material maintains the cell thickness at the portions where the metal auxiliary electrodes face each other, and there is a floating gap material that does not contribute to maintaining the cell thickness in the pixel. There is a problem that the domain as the core is generated and the display quality is degraded.

【0009】また、セル厚を維持する金属補助電極が互
いに対向する部分の面積が小さくなると、セル厚制御が
困難になるとという問題点が生じている。
Further, if the area of the portions where the metal auxiliary electrodes maintaining the cell thickness face each other becomes small, there arises a problem that it becomes difficult to control the cell thickness.

【0010】本発明は上記課題を解決するためのもので
あり、その目的とするところは、単純マトリクス方式に
よって実現できる高品位な表示を可能とする高精細液晶
装置を提供するところにある。
The present invention is intended to solve the above problems, and an object of the present invention is to provide a high-definition liquid crystal device capable of high-quality display which can be realized by a simple matrix system.

【0011】[0011]

【課題を解決するための手段】本発明の液晶装置は上記
課題を解決するために、 (1)透明電極と該透明電極上の金属補助電極よりなる
走査電極群と信号電極群がマトリクス状に配置されてそ
の対向部に画素を形成する基板間に記憶効果を有する液
晶を挟持して構成された液晶パネルであり、電極に駆動
電圧信号を印加する手段、液晶の呈する記憶状態を選択
するために駆動電圧信号を制御する手段、該液晶パネル
に偏光を入射する手段と同パネルを透過した光を選択さ
れた記憶状態に応じて識別するよう配置された偏光子か
ら成る液晶装置において、上記透明電極と上記金属補助
電極との段差を平坦化処理することを特徴とする。
In order to solve the above-mentioned problems, the liquid crystal device of the present invention comprises: (1) a scanning electrode group and a signal electrode group consisting of transparent electrodes and metal auxiliary electrodes on the transparent electrodes arranged in a matrix. A liquid crystal panel configured by sandwiching a liquid crystal having a memory effect between substrates arranged to form a pixel at an opposite portion thereof, for applying a drive voltage signal to electrodes, for selecting a memory state exhibited by the liquid crystal. A liquid crystal device comprising means for controlling a drive voltage signal, means for injecting polarized light into the liquid crystal panel and a polarizer arranged to identify light transmitted through the liquid crystal panel according to a selected storage state. It is characterized in that the step between the electrode and the metal auxiliary electrode is flattened.

【0012】(2)前記液晶装置の製造方法において、
所定のパターンを形成した前記透明電極上に金属皮膜を
成膜した後、該金属皮膜をエッチングレジストによって
所定の金属補助電極のパターンにエッチングし、次いで
基板上に該金属補助電極とほぼ同じ厚さの透明膜を形成
した後、上記エッチングレジストを剥離することを特徴
とする。
(2) In the method of manufacturing the liquid crystal device,
After forming a metal film on the transparent electrode on which a predetermined pattern is formed, the metal film is etched by an etching resist to a predetermined pattern of the metal auxiliary electrode, and then the same thickness as the metal auxiliary electrode is formed on the substrate. After the transparent film is formed, the etching resist is peeled off.

【0013】(3)前記(2)において、前記金属補助
電極とほぼ同じ厚さの透明膜が、絶縁膜であることを特
徴とする。
(3) In (2), the transparent film having substantially the same thickness as the metal auxiliary electrode is an insulating film.

【0014】(4)前記(2)において、前記金属補助
電極とほぼ同じ厚さの透明膜が、導電膜であることを特
徴とする。
(4) In the above (2), the transparent film having substantially the same thickness as the metal auxiliary electrode is a conductive film.

【0015】(5)前記記憶効果を有する液晶が、電圧
を印加する前の初期状態においてφrのツイスト角を成
し、パルス電圧群を印加した後の緩和状態としてツイス
ト角が各々略(φr+180°)と略(φr−180°)
である2つの準安定状態を有する性質の液晶である事を
特徴とする。
(5) The liquid crystal having the memory effect has a twist angle of φr in the initial state before the voltage is applied, and the twist angle is approximately (φr + 180 °) in the relaxed state after the pulse voltage group is applied. ) And abbreviation (φr-180 °)
Is a liquid crystal having a property of having two metastable states.

【0016】[0016]

【実施例】以下、具体的な実施例により本発明の詳細を
説明する。
EXAMPLES The present invention will be described in detail below with reference to specific examples.

【0017】図1に本発明の液晶装置における液晶パネ
ル部分の概略断面図を示す。ガラス基板(7)上にスト
ライプ形状のITO透明電極(6)、金属補助電極
(5)、レベリング層(4)、絶縁層(3)、配向膜
(2)を積層して表面にラビング処理を施して対向配置
した。基板間に液晶(1)を封入すると配向処理の効果
によりダイレクターベクトル(9)が配向膜界面で一定
のプレティルト角(θ1、θ2)をもって配列する。液晶
中に光学活性物質を添加する事によって内部の液晶分子
は基板面法線方向に軸を有する螺旋構造をとる。
FIG. 1 is a schematic sectional view of a liquid crystal panel portion in the liquid crystal device of the present invention. A striped ITO transparent electrode (6), a metal auxiliary electrode (5), a leveling layer (4), an insulating layer (3) and an alignment film (2) are laminated on a glass substrate (7), and a rubbing treatment is performed on the surface. They were applied and placed facing each other. When the liquid crystal (1) is enclosed between the substrates, the director vector (9) is arranged with a constant pretilt angle (θ1, θ2) at the interface of the alignment film due to the effect of the alignment treatment. By adding an optically active substance to the liquid crystal, the liquid crystal molecules inside have a spiral structure having an axis in the direction normal to the substrate surface.

【0018】本実施例では室温でネマティック相を呈す
る液晶組成物(E.Merck社製:ZLI−332
9、Δn=0.154)に光学活性添加剤(E.Mer
ck社製:S811)を加えてヘリカルピッチp=3.
5μmに調整した。基板界面にポリイミド配向膜を設
け、上下基板で反平行方向(180度)のラビング処理
を施してギャップd=1.8μmとしたものを用いた。
上記液晶組成物を封入すると界面プレティルト角は上下
基板近傍で逆符号をもって約5°となり、p/4<d<
3p/4であるため、液晶分子の配向は基板法線方向に
螺旋軸を持つ180°ツイスト状態となる。本構成の素
子は印加される駆動電圧波形に応じて略0°ツイスト
(ユニフォーム)状態と略360°ツイスト状態の2つ
の準安定状態を生ずる。本実施例に用いたΔn=0.1
54μm、d=1.8μmなる条件においては、ユニフ
ォーム状態は単純な複屈折効果により、分子軸に略45
゜の角度に偏光した入射光の主偏光軸を略90゜回転し
て出力する。他方の360゜ツイスト状態は概ね光学的
に等方性と見なせる状態であるため、入射した偏光の主
偏光軸を保持したまま透過させる。
In this example, a liquid crystal composition exhibiting a nematic phase at room temperature (ZLI-332 manufactured by E. Merck).
9, Δn = 0.154) with an optically active additive (E. Mer
CK: S811) is added to add helical pitch p = 3.
It was adjusted to 5 μm. A polyimide alignment film was provided on the substrate interface, and the upper and lower substrates were subjected to rubbing treatment in the antiparallel direction (180 degrees) to obtain a gap d = 1.8 μm.
When the liquid crystal composition is enclosed, the interface pretilt angle becomes about 5 ° with the opposite sign in the vicinity of the upper and lower substrates, and p / 4 <d <
Since it is 3p / 4, the orientation of the liquid crystal molecules becomes a 180 ° twist state having a spiral axis in the substrate normal direction. The element of this structure produces two metastable states, that is, a substantially 0 ° twist (uniform) state and a substantially 360 ° twist state depending on the applied drive voltage waveform. Δn = 0.1 used in this example
Under the conditions of 54 μm and d = 1.8 μm, the uniform state has a molecular axis of about 45 due to a simple birefringence effect.
The main polarization axis of incident light polarized at an angle of 90 ° is rotated by about 90 ° and output. On the other hand, the 360 ° twist state is a state which can be regarded as being substantially optically isotropic, and therefore, the main polarization axis of the incident polarized light is transmitted while being retained.

【0019】(実施例1)図2に本発明実施例1の概略
断面図を示す。ガラス基板(7)上の所定の電極パター
ンを施したITO電極(6)上に金属を約200nm成
膜した後、フォトレジストを塗布した。次いで金属補助
電極のパターン形状に露光、現像しエッチングレジスト
(201)とした。次いで、成膜した金属用のエッチン
グ液中で金属をエッチングし、金属補助電極(5)を形
成して図2(a)の状態にした。更に基板(7)上に透
明膜として金属補助電極(5)とほぼ同じ厚さのSiO
2膜(202)を形成(図2(b))した後、エッチン
グレジスト(201)を剥離した。この時エッチングレ
ジスト(201)上のSiO2膜(202)はエッチン
グレジストといっしょにに剥離され、結果として図2
(c)の様にITO電極(6)と金属補助電極(5)と
の段差を平坦化した電極基板が作成できた。
(Embodiment 1) FIG. 2 shows a schematic sectional view of Embodiment 1 of the present invention. A metal film was formed to a thickness of about 200 nm on an ITO electrode (6) having a predetermined electrode pattern on a glass substrate (7), and then a photoresist was applied. Then, the pattern shape of the metal auxiliary electrode was exposed and developed to obtain an etching resist (201). Then, the metal was etched in the formed metal etching solution to form a metal auxiliary electrode (5) to obtain the state of FIG. Furthermore, as a transparent film on the substrate (7), SiO having the same thickness as the metal auxiliary electrode (5) is formed.
After forming the two films (202) (FIG. 2B), the etching resist (201) was peeled off. At this time, the SiO2 film (202) on the etching resist (201) is peeled off together with the etching resist, and as a result, as shown in FIG.
As in (c), an electrode substrate in which the steps between the ITO electrode (6) and the metal auxiliary electrode (5) were flattened could be prepared.

【0020】前述の様に作成した基板を用いて上述の液
晶パネルを作成したところ、平坦化SiO2膜(20
2)を形成していない場合に見られた画素内の浮遊ギャ
ップ材を核としたドメインの発生が押えられ表示品位の
向上した液晶装置を提供できた。また、画素内が平坦化
されたためセル厚を維持する面積が大きくなりセル厚制
御を容易にすることができた。更に、平坦化SiO2膜
(202)が絶縁膜であることにより液晶に印加する駆
動波形の鈍化を約15%小さくする効果を得る事ができ
た。
When the above-mentioned liquid crystal panel was prepared using the substrate prepared as described above, a flattened SiO 2 film (20
It was possible to provide a liquid crystal device having improved display quality by suppressing the generation of domains centering on the floating gap material in the pixel, which was observed in the case where 2) was not formed. Further, since the inside of the pixel is flattened, the area for maintaining the cell thickness becomes large, and the cell thickness control can be facilitated. Further, since the flattened SiO2 film (202) is an insulating film, it is possible to obtain the effect of reducing the blunting of the drive waveform applied to the liquid crystal by about 15%.

【0021】(実施例2)図3は本発明実施例2の概略
断面図で、実施例1においてSiO2膜のかわりに透明
導電膜のITO膜(301)を形成した。実施例1と同
様に、ITO電極と金属補助電極との段差を平坦化する
ことができ、表示品位の向上した液晶装置を容易に提供
することができた。更に平坦化ITO膜が導電膜である
ことにより液晶に印加する電圧の実効値を約10%大き
くする効果を得ることができた。
(Embodiment 2) FIG. 3 is a schematic sectional view of Embodiment 2 of the present invention. In Embodiment 1, an ITO film (301) as a transparent conductive film is formed instead of the SiO 2 film. Similar to Example 1, the step between the ITO electrode and the metal auxiliary electrode could be flattened, and a liquid crystal device with improved display quality could be easily provided. Further, since the flattened ITO film is a conductive film, it is possible to obtain the effect of increasing the effective value of the voltage applied to the liquid crystal by about 10%.

【0022】[0022]

【発明の効果】以上説明した様に本発明によれば、ガラ
ス基板上の透明電極と金属補助電極との段差をSiO2
等の絶縁膜又はITO等の導電膜によりなくし、平坦な
金属補助電極付き透明電極を供給でき、従来見られた画
素内のドメインによる表示品位の低下を防ぐことがで
き、より優れたディスプレイを容易に提供することがで
きた。本発明の液晶装置は、単純マトリクス駆動によっ
て走査線数の多い高精細ディスプレイへの対応が可能で
ある。直視型の液晶装置のみならず、各種ライトバル
ブ、空間光変調器等にも応用できる。
As described above, according to the present invention, the step between the transparent electrode and the metal auxiliary electrode on the glass substrate is formed by SiO2.
It is possible to supply a flat transparent electrode with a metal auxiliary electrode without using an insulating film such as ITO or a conductive film such as ITO, and prevent the deterioration of display quality due to the domain in the pixel that has been seen in the past, thus facilitating a better display. Could be provided to. The liquid crystal device of the present invention can support a high-definition display with a large number of scanning lines by simple matrix driving. It can be applied not only to direct-view type liquid crystal devices, but also to various light valves, spatial light modulators, and the like.

【0023】[0023]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明実施例の液晶装置の構造を表わす断面
図。
FIG. 1 is a sectional view showing the structure of a liquid crystal device according to an embodiment of the present invention.

【図2】本発明実施例1に用いた液晶装置の製造方法を
表わす断面図。
FIG. 2 is a cross-sectional view showing a method of manufacturing a liquid crystal device used in Example 1 of the present invention.

【図3】本発明実施例2に用いた液晶装置の製造方法を
表わす断面図。
FIG. 3 is a sectional view showing a method of manufacturing a liquid crystal device used in Example 2 of the present invention.

【図4】透明電極上に金属補助電極を施した液晶装置の
一般的な断面図。
FIG. 4 is a general cross-sectional view of a liquid crystal device in which a metal auxiliary electrode is provided on a transparent electrode.

【符号の説明】[Explanation of symbols]

1 液晶分子 2 配向膜 3 絶縁層 4 レベリング層 5 金属補助電極 6 透明電極 7 ガラス基板 8 偏光板 9 ダイレクターベクトル θ1,θ2 界面における液晶分子のプ
レティルト角 201 エッチングレジスト 202 SiO2膜 301 ITO膜 d1 ITO電極−ITO電極間
セル厚 d2 ITO電極−金属補助電極
間セル厚 d3 金属補助電極−金属補助電
極間セル厚
1 Liquid crystal molecule 2 Alignment film 3 Insulating layer 4 Leveling layer 5 Metal auxiliary electrode 6 Transparent electrode 7 Glass substrate 8 Polarizing plate 9 Director vector θ1, θ2 Pretilt angle of liquid crystal molecule at the interface 201 Etching resist 202 SiO2 film 301 ITO film d1 ITO Electrode-ITO electrode cell thickness d2 ITO electrode-metal auxiliary electrode cell thickness d3 Metal auxiliary electrode-metal auxiliary electrode cell thickness

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】透明電極と該透明電極上の金属補助電極よ
りなる走査電極群と信号電極群がマトリクス状に配置さ
れてその対向部に画素を形成する基板間に記憶効果を有
する液晶を挟持して構成された液晶パネルであり、電極
に駆動電圧信号を印加する手段、液晶の呈する記憶状態
を選択するために駆動電圧信号を制御する手段、該液晶
パネルに偏光を入射する手段と同パネルを透過した光を
選択された記憶状態に応じて識別するよう配置された偏
光子から成る液晶装置において、上記透明電極と上記金
属補助電極との段差を透明膜により平坦化処理すること
を特徴とする液晶装置。
1. A liquid crystal having a memory effect is sandwiched between a substrate on which a transparent electrode and a scanning electrode group and a signal electrode group each comprising a metal auxiliary electrode on the transparent electrode are arranged in a matrix form, and pixels are formed in the opposing portion thereof. And a means for applying a drive voltage signal to the electrodes, a means for controlling the drive voltage signal for selecting a memory state exhibited by the liquid crystal, and a means for injecting polarized light into the liquid crystal panel. In a liquid crystal device composed of a polarizer arranged so as to discriminate light passing through the light source in accordance with a selected memory state, a step of flattening a step between the transparent electrode and the metal auxiliary electrode with a transparent film is characterized in that Liquid crystal device.
【請求項2】前記液晶装置の製造方法において、所定の
パターンを形成した前記透明電極上に金属皮膜を成膜し
た後、該金属皮膜をエッチングレジストによって所定の
金属補助電極のパターンにエッチングし、次いで基板上
に該金属補助電極とほぼ同じ厚さの透明膜を形成した
後、上記エッチングレジストを剥離することを特徴とす
る液晶装置の製造方法。
2. In the method for manufacturing a liquid crystal device, a metal film is formed on the transparent electrode having a predetermined pattern, and the metal film is etched into a predetermined pattern of a metal auxiliary electrode with an etching resist, Next, a method of manufacturing a liquid crystal device, characterized in that a transparent film having a thickness substantially the same as that of the metal auxiliary electrode is formed on a substrate, and then the etching resist is removed.
【請求項3】前記金属補助電極とほぼ同じ厚さの透明膜
が、絶縁膜であることを特徴とする請求項1記載の液晶
装置及び請求項2記載の製造方法。
3. The liquid crystal device according to claim 1, wherein the transparent film having substantially the same thickness as the metal auxiliary electrode is an insulating film, and the manufacturing method according to claim 2.
【請求項4】前記金属補助電極とほぼ同じ厚さの透明膜
が、導電膜であることを特徴とする請求項1記載の液晶
装置及び請求項2記載の製造方法。
4. The liquid crystal device according to claim 1, wherein the transparent film having substantially the same thickness as the metal auxiliary electrode is a conductive film, and the manufacturing method according to claim 2.
【請求項5】前記記憶効果を有する液晶が、電圧を印加
する前の初期状態においてφrのツイスト角を成し、パ
ルス電圧群を印加した後の緩和状態としてツイスト角が
各々略(φr+180°)と略(φr−180°)である
2つの準安定状態を有する性質の液晶である事を特徴と
する請求項1、2、3、4記載の液晶装置及びその製造
方法。
5. The liquid crystal having the memory effect has a twist angle of φr in an initial state before a voltage is applied, and the twist angle is approximately (φr + 180 °) as a relaxed state after a pulse voltage group is applied. 5. The liquid crystal device according to claim 1, 2, 3, and 4, and a method for manufacturing the same, wherein the liquid crystal is a liquid crystal having two metastable states of approximately (φr−180 °).
JP7670895A 1995-03-31 1995-03-31 Liquid crystal device and its production Pending JPH08271921A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7670895A JPH08271921A (en) 1995-03-31 1995-03-31 Liquid crystal device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7670895A JPH08271921A (en) 1995-03-31 1995-03-31 Liquid crystal device and its production

Publications (1)

Publication Number Publication Date
JPH08271921A true JPH08271921A (en) 1996-10-18

Family

ID=13613039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7670895A Pending JPH08271921A (en) 1995-03-31 1995-03-31 Liquid crystal device and its production

Country Status (1)

Country Link
JP (1) JPH08271921A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
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KR101026804B1 (en) * 2004-02-20 2011-04-04 삼성전자주식회사 Method for forming auxiliary electrode of organic electro luminescence display
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101026804B1 (en) * 2004-02-20 2011-04-04 삼성전자주식회사 Method for forming auxiliary electrode of organic electro luminescence display
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US10051731B2 (en) 2012-11-30 2018-08-14 Lg Display Co., Ltd. Conductive substrate and method for manufacturing same
US10492296B2 (en) 2012-11-30 2019-11-26 Lg Display Co., Ltd. Conductive substrate and method for manufacturing same
JP2016517136A (en) * 2013-08-01 2016-06-09 エルジー・ケム・リミテッド TRANSPARENT CONDUCTIVE LAMINATE, TRANSPARENT ELECTRODE CONTAINING TRANSPARENT CONDUCTIVE LAMINATE, AND METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE LAMINATE
US9750131B2 (en) 2013-08-01 2017-08-29 Lg Chem, Ltd. Transparent conductive laminate, transparent electrode including transparent conductive laminate, and method for manufacturing transparent conductive laminate
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