JPH08269447A - Sulfide phosphor and its production - Google Patents
Sulfide phosphor and its productionInfo
- Publication number
- JPH08269447A JPH08269447A JP7075404A JP7540495A JPH08269447A JP H08269447 A JPH08269447 A JP H08269447A JP 7075404 A JP7075404 A JP 7075404A JP 7540495 A JP7540495 A JP 7540495A JP H08269447 A JPH08269447 A JP H08269447A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- sulfide phosphor
- film
- sulfide
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば１００Ｖ程度の
電圧で加速された電子の射突によって発光する分解しに
くい硫化物蛍光体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sulfide phosphor, which is hard to decompose and emits light by electron bombardment accelerated by a voltage of about 100V.
【０００２】[0002]
【従来の技術】一般的な蛍光表示管は、高真空雰囲気に
保持された外囲器の内部に電子を放出する陰極と蛍光体
層を有する陽極とを有している。陰極から放出された電
子は陽極に射突して蛍光体層を発光させる。2. Description of the Related Art A general fluorescent display tube has a cathode which emits electrons and an anode which has a phosphor layer inside an envelope which is held in a high vacuum atmosphere. The electrons emitted from the cathode strike the anode to cause the phosphor layer to emit light.
【０００３】電子を加速する蛍光表示管の駆動電圧が高
いほど、電子が射突する蛍光体層は分解しやすくなる。
そこで、蛍光体の分解を防止するため、蛍光体層の表面
に保護のための膜を形成する場合があった。例えば、酸
化亜鉛蛍光体の場合には、その表面にＳｉＯ2 膜を形成
し、そのＳｉＯ2 の量を制御することによって低電圧か
ら高電圧に至る駆動電圧の広い範囲において前記蛍光体
の分解を効果的に防止することができる。The higher the driving voltage of the fluorescent display tube for accelerating the electrons, the easier the phosphor layer on which the electrons impinge is to decompose.
Therefore, in order to prevent the decomposition of the phosphor, a protective film may be formed on the surface of the phosphor layer. For example, in the case of a zinc oxide phosphor, a SiO 2 film is formed on the surface of the phosphor, and the phosphor is decomposed in a wide range of driving voltage from low voltage to high voltage by controlling the amount of SiO 2. It can be effectively prevented.
【０００４】[0004]
【発明が解決しようとする課題】蛍光表示管において
は、発光表示を多色で行うために前記酸化亜鉛蛍光体以
外の蛍光体の利用が進められている。例えば、赤色系や
青色系等の発光が得られる硫化物蛍光体が、フルカラー
又はマルチカラーのグラフィック蛍光表示管に使用され
ている。In fluorescent display tubes, the use of phosphors other than the zinc oxide phosphor has been promoted in order to perform multicolor emission display. For example, sulfide phosphors capable of emitting red or blue light are used in full-color or multi-color graphic fluorescent display tubes.
【０００５】しかしながら、硫化物蛍光体は、その表面
にＳｉＯ2 膜を形成しておいても、例えば１００Ｖ前後
の高電圧で加速した電子が射突すると分解しやすいとい
う問題があった。そして、硫化物蛍光体が分解すると蛍
光表示管の外囲器内にイオウが飛散し、イオウは陰極に
被着してその電子放出能力を低下させてしまう。このた
め、蛍光表示管のアノード電流は低下し、表示輝度の低
下が早まってしまうという問題があった。又硫化物蛍光
体は酸化亜鉛蛍光体と併用して使用されるが、硫化物蛍
光体が分解すると隣接する酸化亜鉛蛍光体の表面に分解
したイオウが付着して酸化亜鉛自体の発光特性も低下さ
せてしまうという問題があった。However, the sulfide phosphor has a problem that even if the SiO 2 film is formed on the surface of the sulfide phosphor, the sulfide phosphor is easily decomposed when the electrons are accelerated by a high voltage of about 100 V. Then, when the sulfide phosphor is decomposed, sulfur scatters inside the envelope of the fluorescent display tube, and the sulfur adheres to the cathode and reduces its electron emission capability. Therefore, there is a problem in that the anode current of the fluorescent display tube is lowered, and the display luminance is quickly lowered. The sulfide phosphor is used in combination with the zinc oxide phosphor, but when the sulfide phosphor decomposes, the decomposed sulfur adheres to the surface of the adjacent zinc oxide phosphor and the emission characteristics of zinc oxide itself also deteriorate. There was the problem of letting it go.
【０００６】本発明は、高電圧で加速された電子の射突
によっても分解しにくい硫化物蛍光体と、その製造方法
を提供することを目的としている。[0006] It is an object of the present invention to provide a sulfide phosphor which is not easily decomposed even by electron bombardment accelerated by a high voltage, and a method for producing the same.
【０００７】[0007]
【課題を解決するための手段】請求項１に記載された硫
化物蛍光体は、表面にイットリウム酸化物層が形成され
たことを特徴としている。The sulfide phosphor described in claim 1 is characterized in that an yttrium oxide layer is formed on the surface thereof.
【０００８】請求項２に記載された硫化物蛍光体及の製
造方法は、有機イットリウムを含有する液体を硫化物蛍
光体の表面に塗布し、これを焼成して硫化物蛍光体の表
面にイットリウム酸化物層を形成することを特徴として
いる。According to a second aspect of the present invention, in the method for producing a sulfide phosphor, a liquid containing organic yttrium is applied to the surface of the sulfide phosphor, and the liquid is fired to form yttrium on the surface of the sulfide phosphor. It is characterized in that an oxide layer is formed.
【０００９】[0009]
【作用】安定で分解しにくいイットリウム酸化物層は、
硫化物蛍光体との密着性が高いＹ2 Ｏ2 Ｓ層を介して硫
化物蛍光体の表面に形成されると推定されており、硫化
物蛍光体の表面から剥がれにくい。[Function] The yttrium oxide layer, which is stable and difficult to decompose,
It is presumed that the sulfide phosphor is formed on the surface of the sulfide phosphor through the Y 2 O 2 S layer, which has high adhesion to the sulfide phosphor, and is not easily peeled off from the surface of the sulfide phosphor.
【００１０】[0010]
【実施例】本発明者等は、ＳｉＯ2 膜を硫化物蛍光体に
形成しても１００Ｖ程度の制御電圧で加速した電子の射
突によって容易に分解してしまう理由を、次のように考
察した。まず、ＺｎＳ結晶基板にＳｉＯ2 膜をゾルゲル
法で形成したが、密着強度が弱く、ＳｉＯ2 膜は極めて
簡単に蛍光体から剥がれてしまった。この事実から、Ｚ
ｎＳや（Ｚｎ，Ｃｄ）Ｓ等を母体とする硫化物蛍光体は
ＳｉＯ2 との結晶格子のミスマッチが大きいために高い
密着性が得られないと考えた。従って、硫化物蛍光体に
ＳｉＯ2 を被覆しても、電子衝撃やイオン衝撃等によっ
て簡単に剥離してしまうものと考えられる。また、被覆
するＳｉＯ2 膜の量を増やすと、硫化物蛍光体とＳｉＯ
2 膜の間の歪みが増大し、ＳｉＯ2 膜の量が増えるほど
硫化物蛍光体の表面の結晶性が劣化し、分解しやすくな
ってしまうと考えられる。EXAMPLES The present inventors consider the reason why even if a SiO 2 film is formed on a sulfide phosphor, it is easily decomposed by electron bombardment accelerated by a control voltage of about 100V, as follows. did. First, an SiO 2 film was formed on a ZnS crystal substrate by the sol-gel method, but the adhesion strength was weak and the SiO 2 film was peeled off from the phosphor very easily. From this fact, Z
It was considered that the sulfide phosphor having nS, (Zn, Cd) S, etc. as a matrix could not have high adhesion because the crystal lattice mismatch with SiO 2 was large. Therefore, it is considered that even if the sulfide phosphor is coated with SiO 2 , the sulfide phosphor is easily peeled off by electron impact or ion impact. Further, when the amount of the SiO 2 film coated is increased, the sulfide phosphor and the SiO 2 film are
It is considered that as the strain between the two films increases and the amount of the SiO 2 film increases, the crystallinity of the surface of the sulfide phosphor deteriorates and the decomposition easily occurs.
【００１１】本発明者等は、上述の認識に立脚し、鋭意
研究した結果、硫化物蛍光体との密着性が良好で、電子
衝撃やイオン衝撃等による分解がしにくい被覆膜を開発
した。この被覆膜は、ＺｎＳや（Ｚｎ，Ｃｄ）Ｓ等を母
体とする硫化物蛍光体の表面に形成されたＹ2 Ｏ3 膜か
らなる。Based on the above recognition, the inventors of the present invention have conducted extensive studies and as a result, have developed a coating film having good adhesion to a sulfide phosphor and being resistant to decomposition by electron impact or ion impact. . This coating film is a Y 2 O 3 film formed on the surface of a sulfide phosphor having ZnS, (Zn, Cd) S or the like as a base material.
【００１２】硫化物蛍光体に上記被覆膜を形成する方法
を説明する。有機イットリウムとしてのプロピオン酸イ
ットリウム(CH3CH2COOY)を含有する膜形成液を使用し
た。さらに具体的には、プロピオン酸イットリウムを酢
ケイ剤で溶解し、エタノールで希釈した膜形成液（一般
式Ｙ（ＯＲ）n ，但しＲはアルキル基）を用いた。A method for forming the coating film on the sulfide phosphor will be described. A film forming solution containing yttrium propionate (CH 3 CH 2 COOY) as organic yttrium was used. More specifically, a film-forming solution (general formula Y (OR) n , where R is an alkyl group) prepared by dissolving yttrium propionate in a silicic acid acetate and diluting with ethanol was used.
【００１３】前記硫化物蛍光体の表面に前記膜形成液を
塗布し、これを大気中で焼成する。硫化物蛍光体の表面
にはＹ2 Ｏ2 Ｓ膜を間にしてＹ2 Ｏ3 膜が形成されると
考えられる。硫化物蛍光体とＹ2 Ｏ3 層の間にあるＹ2
Ｏ2 Ｓ膜は、硫化物蛍光体表面のＳと膜形成液の成分が
焼成行程において反応して生成したと考えられる。Ｙ 2
Ｏ2 Ｓは安定な物質であり、硫化物蛍光体とＹ2 Ｏ3 膜
の密着性を向上させる。Ｙ2 Ｏ2 Ｓ膜の上にあるＹ2 Ｏ
3 は非常に安定な物質であり、１００Ｖ程度の制御電圧
で加速された電子の射突によっても分解しにくい。The film forming liquid is applied to the surface of the sulfide phosphor.
Apply and fire in air. Surface of sulfide phosphor
For Y2O2Y with S film in between2O3Once the film is formed
Conceivable. Sulfide phosphor and Y2O3Y between layers2
O2The S film contains S on the surface of the sulfide phosphor and the components of the film forming liquid.
It is considered that it was generated by a reaction in the firing process. Y 2
O2S is a stable substance, and contains sulfide phosphor and Y2O3film
To improve the adhesion. Y2O2Y on the S film2O
3Is a very stable substance and has a control voltage of about 100V.
It is difficult to disassemble even by the impact of electrons accelerated by.
【００１４】上記のようにして硫化物蛍光体に形成した
Ｙ2 Ｏ3 膜が剥がれにくいことをスクラッチテスターを
用いた引っかきテストで確認した。即ち、スクラッチテ
スターを用いた引っかきテストにおいて、ＺｎＳ結晶基
板に形成したＳｉＯ2 膜の数値が３０ｍＮであったのに
対し、本実施例のＹ2 Ｏ3 膜については５０ｍＮの値を
得た。It was confirmed by a scratch test using a scratch tester that the Y 2 O 3 film formed on the sulfide phosphor as described above is difficult to peel off. That is, in the scratch test using the scratch tester, the numerical value of the SiO 2 film formed on the ZnS crystal substrate was 30 mN, while the value of 50 mN was obtained for the Y 2 O 3 film of this example.
【００１５】本実施例のＹ2 Ｏ3 膜を形成した硫化物蛍
光体を蛍光表示管の陽極表示部に実装し、連続点灯実験
を行う。実験結果を図１に示す。実験に供する実施例の
Ｙ2Ｏ3 膜を備えた硫化物蛍光体のサンプルは、１、１
０、５０ｇ／ｌの３種類のＹ 2 Ｏ3 濃度の膜形成液と、
２００℃と４００℃の２種類の焼成温度の組み合わせに
よって、６種類を形成した。また、隣接する硫化物蛍光
体の分解による影響を調べるため、実施例の硫化物蛍光
体の近傍にＺｎＯ蛍光体の表示部を設けておき、これは
連続点灯実験中は非点灯とした。また、膜によって被覆
されていない硫化物蛍光体（コートせず）と、ＳｉＯ2
膜で被覆した硫化物蛍光体（ＳｉＯ2 コート）を陽極表
示部に有する蛍光表示管を比較のために形成した。Y of this embodiment2O3Film-formed sulfide firefly
The light-emitting device is mounted on the anode display part of the fluorescent display tube, and continuous lighting experiments are performed.
I do. The experimental results are shown in FIG. Of the examples used in the experiment
Y2O3Samples of sulphide phosphor with membrane are 1, 1
Three types of Y of 0 and 50 g / l 2O3A film-forming liquid having a concentration,
For combination of two kinds of firing temperature of 200 ℃ and 400 ℃
Therefore, 6 types were formed. Also, adjacent sulfide fluorescence
In order to investigate the effect of body decomposition, sulfide fluorescence of the example
A display section of ZnO phosphor is provided near the body.
During the continuous lighting experiment, it was not lit. Also covered by a membrane
Sulfide phosphor not coated (uncoated) and SiO2
Sulfide phosphor coated with a film (SiO2Coat) anode table
A fluorescent display tube provided in the display part was formed for comparison.
【００１６】実施例の硫化物蛍光体を連続点灯し、所定
の時間が経過した後の輝度残存率のデータとして陽極電
流の値ｉｂと、同じく蛍光体の輝度Ｌとを、初期値を１
００％として測定する。また、隣接するＺｎＯ蛍光体の
表示部における陽極電流の値ｉｂと蛍光体の輝度Ｌとを
測定する。測定を行ったのは、連続点灯１４０時間後
と、４００時間後と、９００時間後である。駆動条件
は、陽極電圧１２０Ｖ、デューティ比１／７０である。The initial value of the anode current value ib and the luminance L of the phosphor are set to 1 as data of the residual brightness rate after a predetermined time has passed after the sulfide fluorescent material of the embodiment is continuously turned on.
It is measured as 00%. Further, the value ib of the anode current and the brightness L of the phosphor in the display portion of the adjacent ZnO phosphor are measured. The measurement was performed after 140 hours of continuous lighting, 400 hours, and 900 hours. The driving conditions are an anode voltage of 120 V and a duty ratio of 1/70.
【００１７】図１に示すように、いずれの条件において
も、本実施例の膜によって被覆されていない硫化物蛍光
体（コートせず）や、ＳｉＯ2 膜で被覆した硫化物蛍光
体（ＳｉＯ2 コート）よりも、本実施例のＹ2 Ｏ3 膜で
被覆された硫化物蛍光体の方が優れた発光状態を示して
いる。As shown in FIG. 1, under any of the conditions, a sulfide phosphor not coated with the film of this embodiment (uncoated) or a sulfide phosphor coated with a SiO 2 film (SiO 2 The sulfide phosphor coated with the Y 2 O 3 film of this example exhibits a better light emitting state than the coating).
【００１８】また、隣接するＺｎＯ蛍光体の発光状態
も、本実施例の膜によって被覆されていない硫化物蛍光
体（コートせず）や、ＳｉＯ2 膜で被覆した硫化物蛍光
体（ＳｉＯ2 コート）の近傍にあるＺｎＯ蛍光体よりも
良好である。Further, the emission states of the adjacent ZnO phosphors are also the sulfide phosphor not coated with the film of this embodiment (uncoated) or the sulfide phosphor coated with the SiO 2 film (SiO 2 coat). Better than ZnO phosphors in the vicinity of
【００１９】以上の実験結果から、本実施例の硫化物蛍
光体は、Ｙ2 Ｏ3 膜で被覆されているので１００Ｖ程度
の制御電圧で加速された電子の射突によっても殆ど分解
せず、自身の発光輝度も低下しない。即ち硫化物蛍光体
の輝度残存率が向上し、寿命が長くなる。また、分解し
にくいので隣接するＺｎＯ蛍光体に悪影響を与えること
もない。From the above experimental results, since the sulfide phosphor of this embodiment is coated with the Y 2 O 3 film, it is hardly decomposed by the electron bombardment accelerated by the control voltage of about 100V, The emission brightness of itself does not decrease. That is, the residual brightness of the sulfide phosphor is improved and the life is extended. Further, since it is difficult to decompose, it does not adversely affect the adjacent ZnO phosphor.
【００２０】[0020]
【発明の効果】本発明の硫化物蛍光体は、その表面にイ
ットリウム酸化物層を設けたので、電子の射突等によっ
ても分解しにくく、輝度残存率が向上して寿命が改善さ
れる。また、隣接するＺｎＯ蛍光体等に悪影響を与えな
い。Since the sulfide phosphor of the present invention is provided with the yttrium oxide layer on its surface, it is difficult to decompose due to electron bombardment, etc., and the residual brightness rate is improved and the life is improved. Further, it does not adversely affect the adjacent ZnO phosphor or the like.
【図１】本発明の実施例の効果を確認する実験結果を示
す一覧表である。FIG. 1 is a list showing experimental results for confirming the effects of the examples of the present invention.
Claims (2)
た硫化物蛍光体。1. A sulfide phosphor having a surface on which an yttrium oxide layer is formed.
物蛍光体の表面に塗布し、これを焼成して硫化物蛍光体
の表面にイットリウム酸化物層を形成することを特徴と
する硫化物蛍光体及の製造方法。2. A sulfide phosphor, characterized in that a liquid containing organic yttrium is applied to the surface of the sulfide phosphor and is baked to form an yttrium oxide layer on the surface of the sulfide phosphor. Manufacturing method.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07540495A JP3386622B2 (en) | 1995-03-31 | 1995-03-31 | Sulfide phosphor and method for producing the same |
| TW085103425A TW310340B (en) | 1995-03-31 | 1996-03-21 | |
| KR1019960008768A KR100235404B1 (en) | 1995-03-31 | 1996-03-28 | Sulfide phosphor and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07540495A JP3386622B2 (en) | 1995-03-31 | 1995-03-31 | Sulfide phosphor and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08269447A true JPH08269447A (en) | 1996-10-15 |
| JP3386622B2 JP3386622B2 (en) | 2003-03-17 |
Family
ID=13575213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07540495A Expired - Fee Related JP3386622B2 (en) | 1995-03-31 | 1995-03-31 | Sulfide phosphor and method for producing the same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3386622B2 (en) |
| KR (1) | KR100235404B1 (en) |
| TW (1) | TW310340B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4207368B2 (en) * | 2000-08-15 | 2009-01-14 | ソニー株式会社 | LIGHT EMITTING MANUFACTURING METHOD, LIGHT EMITTING MATERIAL PRODUCED BY THE MANUFACTURING METHOD, DISPLAY SUBSTRATE HAVING THE LIGHT EMITTING UNIT, AND DISPLAY DEVICE |
-
1995
- 1995-03-31 JP JP07540495A patent/JP3386622B2/en not_active Expired - Fee Related
-
1996
- 1996-03-21 TW TW085103425A patent/TW310340B/zh active
- 1996-03-28 KR KR1019960008768A patent/KR100235404B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP3386622B2 (en) | 2003-03-17 |
| TW310340B (en) | 1997-07-11 |
| KR100235404B1 (en) | 1999-12-15 |
| KR960034360A (en) | 1996-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2947156B2 (en) | Phosphor manufacturing method | |
| US6103142A (en) | Phosphor and display device | |
| KR100706184B1 (en) | Fluorescent lamp and manufacturing method thereof | |
| US5543685A (en) | Flourescent display device having a protective film interposed between color filters and anode electrodes | |
| TW200847226A (en) | Surface treatment method for phosphor and method for manufacturing flat display | |
| JP3386622B2 (en) | Sulfide phosphor and method for producing the same | |
| JP2971496B2 (en) | Method for producing slow electron beam excited phosphor | |
| JPH08302342A (en) | Phosphor | |
| US20070159058A1 (en) | Phosphors and display device | |
| JP3520597B2 (en) | Method for manufacturing fluorescent display tube | |
| KR100261786B1 (en) | Composition of forming fluorescent film for display and method of forming fluorescent firm for display | |
| JP2001351510A (en) | Anode substrate for luminescent element and electroluminescent element | |
| JP2897716B2 (en) | Phosphor | |
| JPS61243646A (en) | Fluorescent character display tube | |
| CN1347957A (en) | Illuminating material and producing process and display substrate and display device containing the same illuminating material | |
| KR100187484B1 (en) | Element phosphorescent | |
| JPS6319737A (en) | Fluorescent device | |
| JPH0892551A (en) | Fluorescent display tube | |
| JPH11329727A (en) | Rgb light emitting organic el element | |
| JP2723717B2 (en) | Fluorescent display tube | |
| JPH10279933A (en) | Fluorescent body and display tube | |
| JPH02178386A (en) | Blue luminous fluorescent substance | |
| JPH09286935A (en) | Composition of fluorescent membrane for display and formation of fluorescent membrane for display | |
| JPS6243044A (en) | Fluorescent character display tube | |
| JPS606414Y2 (en) | Slow electron beam excitation fluorescent display tube |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080110 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090110 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100110 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100110 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110110 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110110 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120110 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130110 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |