JPH0826840A - Bonding method for silicon carbide and silicon - Google Patents
Bonding method for silicon carbide and siliconInfo
- Publication number
- JPH0826840A JPH0826840A JP18200694A JP18200694A JPH0826840A JP H0826840 A JPH0826840 A JP H0826840A JP 18200694 A JP18200694 A JP 18200694A JP 18200694 A JP18200694 A JP 18200694A JP H0826840 A JPH0826840 A JP H0826840A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- solder
- silicon carbide
- joining
- carbide ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Ceramic Products (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミックスと金属と
の接合方法に関し、特に炭化珪素セラミックスとシリコ
ンとの接合方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for joining ceramics and metal, and more particularly to a method for joining silicon carbide ceramics and silicon.
【０００２】[0002]
【従来の技術】従来、炭化珪素セラミックスとシリコン
とを接合する方法としては、炭化珪素の表面にクロムを
焼き付けて形成し、その形成した面上に銀ロウを介して
シリコンと接合する方法が採られていた。2. Description of the Related Art Conventionally, as a method of joining silicon carbide ceramics and silicon, a method of baking chromium on the surface of silicon carbide and joining it to silicon via silver solder on the formed surface is adopted. It was being done.
【０００３】また、最近、炭化珪素の表面に活性金属を
含んだ金属層、例えば金とニッケル、或いは銀と銅から
成るマトリックス中に、活性金属としてチタンを含む金
属層を形成し、その金属層の面上に金はんだを介してシ
リコンと接合する方法が開発された。Recently, a metal layer containing an active metal, for example, a metal layer containing titanium as an active metal in a matrix of gold and nickel or silver and copper is formed on the surface of silicon carbide, and the metal layer is formed. A method has been developed for bonding with silicon on the surface of silicon through gold solder.
【０００４】[0004]
【発明が解決しようとする課題】しかし、これらの方法
は、いずれも炭化珪素の表面に金属層を形成する必要が
あり、セラミックスである炭化珪素と金属であるシリコ
ンを、はんだ、あるいはロウで直接接合することができ
なかった。。However, in any of these methods, it is necessary to form a metal layer on the surface of silicon carbide, and the silicon carbide which is ceramics and the silicon which is metal are directly soldered or brazed. Could not be joined. .
【０００５】本発明は、上述した従来技術が有する課題
に鑑みなされたものであって、その目的は、炭化珪素セ
ラミックスとシリコンとをはんだによって直接接合でき
る、簡便な接合方法を提供することにある。The present invention has been made in view of the above problems of the prior art, and an object thereof is to provide a simple bonding method capable of directly bonding silicon carbide ceramics and silicon by soldering. .
【０００６】[0006]
【課題を解決するための手段】本発明は、上記目的を達
成するため、炭化珪素セラミックスとシリコンとの間
に、金はんだを介して荷重をかけながら加熱処理すれば
直接接合できるとの知見を得て本発明を完成した。In order to achieve the above object, the present invention has found that a silicon carbide ceramic and silicon can be directly joined by heat treatment while applying a load via gold solder. Thus, the present invention was completed.
【０００７】上記金はんだとしては、シリコンを含む金
はんだとした（請求項１）。金はんだ中にシリコンを含
むのは、はんだの溶融温度、つまり接合温度を下げるこ
とが出来、さらにシリコンとの濡れがより良好となるた
めである。The gold solder is a gold solder containing silicon (claim 1). The reason why the gold solder contains silicon is that the melting temperature of the solder, that is, the joining temperature can be lowered, and the wetting with silicon becomes better.
【０００８】また、上記金はんだを介してシリコンと接
合する方法としては、該はんだを真空中、不活性ガス中
又は還元性ガス中において、はんだが溶融する温度より
２００℃以上高い温度で、かつ１０ｇ／ｃｍ2以上の荷
重をかけながら加熱処理することとした（請求項２）。As a method of joining the solder with silicon via the gold solder, the solder is heated in vacuum, in an inert gas or in a reducing gas at a temperature higher than the melting temperature of the solder by 200 ° C. or more, and The heat treatment was performed while applying a load of 10 g / cm 2 or more (claim 2).
【０００９】はんだを加熱処理する温度が、はんだの溶
融温度より２００℃以上高い温度が必要であるのは、は
んだが完全に溶けた状態でないと接合が不完全になるか
らである。また、その加熱雰囲気については、酸化雰囲
気であってはならない。酸化性雰囲気中で加熱処理され
ると、金はんだ中のシリコンが酸化されてＳｉＯ2とな
るので、炭化珪素及びシリコンともはんだの濡れが悪く
なってしまう。さらに、１０ｇ／ｃｍ2以上の荷重をか
けるのは、１０ｇ／ｃｍ2未満であると接合が不十分と
なるからである。The temperature at which the solder is heat-treated is required to be higher than the melting temperature of the solder by 200 ° C. or more because the solder will be incomplete unless the solder is completely melted. Moreover, the heating atmosphere should not be an oxidizing atmosphere. When heat-treated in an oxidizing atmosphere, the silicon in the gold solder is oxidized to form SiO 2 , so that the wettability of the solder with both silicon carbide and silicon deteriorates. Further, a load of 10 g / cm 2 or more is applied because if the load is less than 10 g / cm 2 , the bonding will be insufficient.
【００１０】以上の方法を採ることにより、炭化珪素と
シリコンとを直接簡便に接合することができる。By adopting the above method, silicon carbide and silicon can be directly and easily bonded.
【００１１】[0011]
【実施例】以下、本発明の実施例を比較例と共に挙げ、
本発明をより詳細に説明する。EXAMPLES Examples of the present invention will be given below together with comparative examples.
The present invention will be described in more detail.
【００１２】（実施例１〜２）直径１０ｍｍで、厚さ６
ｍｍの炭化珪素セラミックス〔（株）日本セラテック社
製〕の表面上に、直径が１ｍｍで、組成が３．１５Ｓｉ
−９６．８５Ａｕ（ｗｔ％）（溶融温度：３７０℃）の
金箔を載せ、その上に直径１０ｍｍのシリコン板を重ね
合わせた後、それを真空中において、１０ｇ／ｃｍ2の
荷重をかけながら表１に示す温度で加熱処理して炭化珪
素セラミックスとシリコンとを接合した。(Examples 1 and 2) Diameter 10 mm, thickness 6
mm silicon carbide ceramics [manufactured by Nippon Ceratech Co., Ltd.] with a diameter of 1 mm and a composition of 3.15 Si
-96.85Au (wt%) (melting temperature: 370 ° C.) Table loaded with gold foil, after on the superimposed silicon having a diameter of 10mm that, the in a vacuum it, while applying a load of 10 g / cm 2 of The silicon carbide ceramics and silicon were joined by heat treatment at the temperature shown in FIG.
【００１３】得られた接合体を接合面に対して、炭化珪
素セラミックスとシリコンとの接合性を接合部の目視及
び顕微鏡観察によりチェックした。即ち、炭化珪素セラ
ミックスとシリコン板とが密に接合しているものを良と
し、炭化珪素セラミックスとシリコン板との接合がはが
れていたり、接合界面にボイドがあったりするものを不
良とした。その結果を表１に示す。With respect to the joint surface of the obtained joint body, the joint property between the silicon carbide ceramic and silicon was checked by visual observation and microscopic observation of the joint portion. That is, the one in which the silicon carbide ceramics and the silicon plate are closely bonded is regarded as good, and the one in which the silicon carbide ceramics and the silicon plate are separated from each other or the joint interface has a void is regarded as defective. Table 1 shows the results.
【００１４】（比較例１〜５）なお、比較のため、実施
例と同一の材料を用い、真空中において表１に示す荷重
をかけながら表１に示す温度で加熱処理した。得られた
接合体に対して、同じく実施例と同様に接合性をチェッ
クした。その結果を表１に示す。(Comparative Examples 1 to 5) For comparison, the same materials as those in Examples were used and heat-treated at a temperature shown in Table 1 under a load shown in Table 1 in vacuum. The bondability of the obtained bonded body was checked in the same manner as in the example. Table 1 shows the results.
【００１５】[0015]
【表１】 [Table 1]
【００１６】表１から明らかなように、実施例１〜２に
おいては、いずれも接合性が良好であることを示してい
る。これに対して比較例では、加熱処理温度が本発明の
温度より低いと不良となり（比較例１〜２）、また、荷
重の大きさが本発明の荷重より低いと不良となっている
（比較例３〜５）。As is clear from Table 1, all of Examples 1 and 2 show that the bondability is good. On the other hand, in the comparative example, when the heat treatment temperature is lower than the temperature of the present invention, it becomes defective (Comparative Examples 1 and 2), and when the magnitude of the load is lower than the load of the present invention, it becomes defective (comparison). Examples 3-5).
【００１７】[0017]
【発明の効果】以上、説明した本発明にかかる炭化珪素
セラミックスとシリコンとの接続方法により接合すれ
ば、炭化珪素セラミックスの表面に金属層を形成するこ
となく、炭化珪素とシリコンとを直接接合することがで
きるようになる。As described above, when the silicon carbide ceramics and the silicon connecting method according to the present invention described above are joined together, the silicon carbide and silicon are directly joined together without forming a metal layer on the surface of the silicon carbide ceramics. Will be able to.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成７年８月３日[Submission date] August 3, 1995
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Name of item to be amended] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【特許請求の範囲】[Claims]
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００８[Correction target item name] 0008
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００８】 また、上記金はんだを介してシリコンと
接合する方法としては、該はんだを真空中、不活性ガス
中又は還元ガス中において、はんだが溶融する温度より
２００℃以上高い温度で、かつ１０ｇ／ｃｍ２以上の荷
重をかけながら加熱処理することとした（請求項１）。In addition, as a method of joining with silicon through the gold solder, the solder is heated in vacuum, in an inert gas or in a reducing gas at a temperature higher than the melting temperature of the solder by 200 ° C. or more and 10 g. The heat treatment is performed while applying a load of / cm 2 or more ( Claim 1 ).
【手続補正３】[Procedure 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１７[Correction target item name] 0017
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００１７】[0017]
【発明の効果】 以上、説明した本発明にかかる炭化珪
素セラミックスとシリコンとの接合方法により接合すれ
ば、炭化珪素セラミックスの表面に金属層を形成するこ
となく、炭化珪素とシリコンとを直接接合することがで
きるようになる。[Effects of the Invention] By joining the silicon carbide ceramics and the joining method according to the present invention as described above, the silicon carbide and silicon are directly joined without forming a metal layer on the surface of the silicon carbide ceramics. Will be able to.
Claims (2)
ンを含む金はんだを介してシリコンと接合することを特
徴とする炭化珪素セラミックスとシリコンとの接合方
法。1. A method for joining silicon carbide ceramics and silicon, which comprises joining the silicon on the surface of the silicon carbide ceramics via a gold solder containing silicon.
法が、該はんだを真空中、不活性ガス中又は還元性ガス
中において、はんだが溶融する温度より２００℃以上高
い温度で、かつ１０ｇ／ｃｍ2以上の荷重をかけて加熱
処理することを特徴とする請求項１記載の炭化珪素セラ
ミックスとシリコンとの接合方法。2. A method of joining to silicon through gold solder, which comprises heating the solder in a vacuum, an inert gas or a reducing gas at a temperature higher than the melting temperature of the solder by 200.degree. The method for joining silicon carbide ceramics and silicon according to claim 1, wherein the heat treatment is performed by applying a load of cm 2 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18200694A JP3352823B2 (en) | 1994-07-12 | 1994-07-12 | Joining method between silicon carbide ceramics and silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18200694A JP3352823B2 (en) | 1994-07-12 | 1994-07-12 | Joining method between silicon carbide ceramics and silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0826840A true JPH0826840A (en) | 1996-01-30 |
| JP3352823B2 JP3352823B2 (en) | 2002-12-03 |
Family
ID=16110682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18200694A Expired - Fee Related JP3352823B2 (en) | 1994-07-12 | 1994-07-12 | Joining method between silicon carbide ceramics and silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3352823B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016006015A (en) * | 2015-09-28 | 2016-01-14 | 日立化成株式会社 | Solder bonded body |
-
1994
- 1994-07-12 JP JP18200694A patent/JP3352823B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016006015A (en) * | 2015-09-28 | 2016-01-14 | 日立化成株式会社 | Solder bonded body |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3352823B2 (en) | 2002-12-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |