JPH08250472A - Substrate holder - Google Patents
Substrate holderInfo
- Publication number
- JPH08250472A JPH08250472A JP5089595A JP5089595A JPH08250472A JP H08250472 A JPH08250472 A JP H08250472A JP 5089595 A JP5089595 A JP 5089595A JP 5089595 A JP5089595 A JP 5089595A JP H08250472 A JPH08250472 A JP H08250472A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mounting portion
- holder
- substrate holder
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Welding Or Cutting Using Electron Beams (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板ホルダに係り、特
に、イオンビ−ムミリング装置によりミリング加工され
る大型基板、例えば液晶基板を保持するに好適な基板ホ
ルダおよびこの基板ホルダに保持された基板をミリング
加工するイオンビ−ムミリング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holder, and more particularly to a large substrate which is milled by an ion beam milling device, for example, a substrate holder suitable for holding a liquid crystal substrate, and a substrate held by this substrate holder. The present invention relates to an ion beam milling device for milling.
【０００２】[0002]
【従来の技術】液晶基板などの大型基板をイオンビ−ム
ミリング装置を用いてミリング加工するに際しては、基
板をガスにより冷却するガス冷却方式が採用されてい
る。この場合基板を基板保持台にに保持させるととも
に、基板保持台に冷却水通路とガス通路を形成し、基板
と基板保持台との間に０〜５００μｍのギャップを形成
し、このギャップ内にガス圧が数Ｔｏｒｒ〜５０Ｔｏｒ
ｒのＨｅガスまたはプロセスガス等を流し、ミリング加
工に伴って高温と成った基板と基板保持台間で熱交換を
行なって、基板を冷却することを行なわれている。2. Description of the Related Art When a large substrate such as a liquid crystal substrate is milled by using an ion beam milling apparatus, a gas cooling system in which the substrate is cooled by gas is adopted. In this case, the substrate is held on the substrate holder, a cooling water passage and a gas passage are formed in the substrate holder, and a gap of 0 to 500 μm is formed between the substrate and the substrate holder. Pressure is a few Torr to 50 Tor
A He gas of r or a process gas or the like is caused to flow, heat is exchanged between the substrate and the substrate holder, which have become high in temperature due to the milling process, and the substrate is cooled.
【０００３】一方、ミリング加工を行なうときに、基板
に残留応力が発生するのを防止するために、例えば、特
開平３−８７３６６号公報に記載されているように、基
板を凸状にすることが行なわれている。また特開昭５５
−１５３３３３号公報に記載されているように、半導体
基板の製造行程でパタ−ンを転写するする時に、基板マ
スクの密着性を良くするために、基板を凸状にするとと
もに、基板に凹部を設けて基板とマクスとの剥がれを良
くするような手法が用いられている。On the other hand, in order to prevent residual stress from being generated in the substrate during the milling process, the substrate is made to have a convex shape, as described in, for example, Japanese Unexamined Patent Publication No. 3-87366. Is being carried out. In addition, JP-A-55
As described in Japanese Patent Laid-Open No. 153333/1993, when transferring a pattern in the process of manufacturing a semiconductor substrate, in order to improve the adhesion of the substrate mask, the substrate has a convex shape and a concave portion is formed on the substrate. A method is used in which the substrate is provided to improve the separation between the substrate and the mask.
【０００４】[0004]
【発明が解決しようとする課題】しかし、従来技術で
は、基板保持台の基板取付け面が平坦になっているた
め、基板保持台に保持された基板にガスを噴射した時
に、基板の中央部付近の膨らみ量が増大し、基板と基板
保持台間の熱交換の効率が大きく低下するという問題点
がある。特に、液晶用ガラス基板のように基板が大型化
すると、基板と基板保持台間のギャップ内のガス圧で基
板中央部が真空容器内側に膨らむ量が増大する。なお、
特開昭６０−１０２７４２号公報に記載されているよう
に、基板保持台を凸状にすることも考えられるが、基板
と基板保持台とのギャップを一定の値に保てなければ熱
交換の効率が低下することになる。However, in the prior art, since the substrate mounting surface of the substrate holding base is flat, when the gas is jetted to the substrate held by the substrate holding base, the vicinity of the central portion of the substrate is reached. There is a problem in that the amount of swelling of the substrate increases and the efficiency of heat exchange between the substrate and the substrate holder is greatly reduced. In particular, when the size of a substrate such as a glass substrate for liquid crystal is increased, the amount of gas pressure in the gap between the substrate and the substrate holder causes the central portion of the substrate to expand inside the vacuum container. In addition,
As described in Japanese Patent Application Laid-Open No. 60-102742, it is possible to make the substrate holder stand convex, but if the gap between the substrate holder and the substrate holder can not be maintained at a constant value, heat exchange will occur. The efficiency will decrease.
【０００５】本発明の目的は、基板と基板保持台とのギ
ャップを一定の範囲内に抑えて基板のガス冷却効果が低
下するのを防止することができる基板ホルダおよびイオ
ンビ−ムミリング装置を提供することにある。An object of the present invention is to provide a substrate holder and an ion beam milling device capable of preventing the gas cooling effect of the substrate from being lowered by suppressing the gap between the substrate and the substrate holder within a certain range. Especially.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するため
に、本発明は、基板が装着持可能に形成された基板装着
部を有する基板保持台と、基板保持台の基板装着部に装
着された基板を基板保持台側に押圧する基板押さえとを
備え、前記基板装着部の内部には基板装着部の表面と基
板との間隙を折り返し点とするガス通路が形成され、前
記基板装着部は、その表面が長手方向に沿った中心線を
凸部として湾曲している基板ホルダを構成したものであ
る。In order to achieve the above-mentioned object, the present invention provides a substrate holding base having a substrate mounting portion on which a substrate is mountable, and a substrate mounting portion of the substrate holding base. And a substrate holder for pressing the substrate toward the substrate holder, and a gas passage having a gap between the surface of the substrate mounting portion and the substrate as a turning point is formed inside the substrate mounting portion. , A substrate holder whose surface is curved with a center line along the longitudinal direction as a convex portion.
【０００７】前記基板ホルダを構成するに際しては、基
板装着部としては、その表面が長手方向に沿った中心線
を凸部として湾曲し、かつ湾曲した表面に基板を保持す
るための突起が複数個膨出形成されているものとするこ
とができる。さらに、この場合、基板装着部に膨出形成
された複数の突起は、基板装着部表面の中心部から端部
にわたって分散して配置され、各突起はその長さが同一
に設定されていることとする。In constructing the substrate holder, the surface of the substrate mounting portion is curved with the center line along the longitudinal direction as a convex portion, and the curved surface has a plurality of protrusions for holding the substrate. It may be bulged. Further, in this case, the plurality of protrusions bulged on the board mounting portion are dispersedly arranged from the central portion to the end portion of the surface of the substrate mounting portion, and each protrusion is set to have the same length. And
【０００８】また、前記各基板ホルダを構成するに際し
ては、以下の要素を加えることが望ましい。Further, in constructing each of the substrate holders, it is desirable to add the following elements.
【０００９】（１）基板装着部の湾曲面は、基板と基板
保持台との間隙にガス通路を介して指定の圧力のガスを
供給したときに、基板と基板保持台との間隙が０〜５０
０μｍとなる形状に設定されている。(1) The curved surface of the substrate mounting portion has a gap of 0 to 0 between the substrate and the substrate holder when a gas having a specified pressure is supplied to the gap between the substrate and the substrate holder via the gas passage. Fifty
The shape is set to 0 μm.
【００１０】（２）基板装着部には、基板端部と基板端
部に接触する基板装着部との間からガスが排出するのを
阻止するシール部材が装着されている。(2) The substrate mounting portion is mounted with a seal member that prevents gas from being discharged from between the substrate end portion and the substrate mounting portion in contact with the substrate end portion.
【００１１】（３）基板保持台には基板保持台を冷却す
るための冷却水通路が形成されている。(3) A cooling water passage for cooling the substrate holder is formed in the substrate holder.
【００１２】また、本発明は、前記基板ホルダの内いづ
れかの基板ホルダと、真空状態に維持された空間部に基
板ホルダを収納する真空容器と、真空容器内に収納され
た基板ホルダの基板に向けてイオンビ−ムを照射するイ
オン源とを備えたイオンビ−ムミリング装置を構成した
ものである。The present invention also relates to any one of the substrate holders, a vacuum container for housing the substrate holder in a space maintained in a vacuum state, and a substrate for the substrate holder housed in the vacuum container. The ion beam milling device is provided with an ion source for irradiating the ion beam toward the ion beam.
【００１３】[0013]
【作用】前記した手段によれば、基板保持台は、基板が
装着される基板装着部の表面が長手方向に沿った中心線
を凸部として湾曲しているため、基板が大型化しても、
基板と基板保持台とのギャップ内のガス圧によって、基
板中央部が真空容器側に膨らむ量が増加しても、基板と
基板保持台とのギャップが拡がるのを防止することがで
き、基板と基板保持台間の熱交換の効率の低下を抑制す
ることができる。さらに、基板装着部に基板を保持する
ための突起を複数個膨出形成すると、基板がこれら突起
に装着された時に、基板と基板保持台とのギャップを一
定にすることができ、基板全体を均一に冷却することが
できる。According to the above-mentioned means, in the substrate holder, since the surface of the substrate mounting portion on which the substrate is mounted is curved with the center line along the longitudinal direction as a convex portion, even if the substrate becomes large,
Even if the amount of gas in the gap between the substrate and the substrate holder causes the central portion of the substrate to expand toward the vacuum container, it is possible to prevent the gap between the substrate and the substrate holder from expanding. It is possible to suppress a decrease in the efficiency of heat exchange between the substrate holders. Furthermore, if a plurality of protrusions for holding the substrate are formed to bulge in the substrate mounting portion, the gap between the substrate and the substrate holder can be made constant when the substrate is mounted on these protrusions, and the entire substrate It can be cooled uniformly.
【００１４】[0014]
【実施例】以下、本発明の一実施例を図面に基づいて説
明する。An embodiment of the present invention will be described below with reference to the drawings.
【００１５】図１は本発明の一実施例を示す基板ホルダ
の縦断面図を示し、図２はイオンビ−ムミリング装置の
全体構成を示す。図２において、イオンビ−ムミリング
装置は、搬送用ロボット１０、真空排気装置１２、試料
準備室１４、ゲ−ト弁１６、真空容器（チャンバ）１
８、イオン源２０、真空排気装置２２等を備えて構成さ
れている。搬送用ロボット１０にはア−ム２４が連結さ
れており、ア−ム２４は試料準備室１４内に収納されて
いる。試料準備室１４は真空排気装置１２によって真空
状態に保たれており、ア−ム２４には基板２６が保持さ
れている。基板２６はア−ム２４に保持された状態で、
ゲ−ト弁１６を介して真空容器１８内に挿入される。真
空容器１８内は真空排気装置２２によって真空状態に保
たれている。そして基板２６は真空容器１８内の基板保
持台２８に装着されたとき、基板抑え３０によって保持
されるようになっている。イオン源２０からはプラズマ
が発生するようになっていおり、イオン源２０からプラ
ズマが発生すると引出電極３２からイオンビームが引き
出される。このイオンビームが基板２６に照射されると
イオンビームに従って基板２６にミリング加工が施され
る。このミリング加工時に、基板２６上のパタ−ンが損
傷したり、レジストが焼きつく等の不具合を防止するた
めに、基板ホルダが以下のように構成されている。FIG. 1 shows a vertical sectional view of a substrate holder showing an embodiment of the present invention, and FIG. 2 shows the entire structure of an ion beam milling apparatus. In FIG. 2, the ion beam milling device includes a transfer robot 10, a vacuum exhaust device 12, a sample preparation chamber 14, a gate valve 16, and a vacuum container (chamber) 1.
8, an ion source 20, a vacuum exhaust device 22, and the like. An arm 24 is connected to the transfer robot 10, and the arm 24 is housed in the sample preparation chamber 14. The sample preparation chamber 14 is kept in a vacuum state by the vacuum exhaust device 12, and the arm 24 holds the substrate 26. With the substrate 26 held by the arm 24,
It is inserted into the vacuum container 18 via the gate valve 16. The inside of the vacuum container 18 is kept in a vacuum state by a vacuum exhaust device 22. When the substrate 26 is mounted on the substrate holder 28 in the vacuum container 18, the substrate 26 is held by the substrate holder 30. Plasma is generated from the ion source 20, and when plasma is generated from the ion source 20, an ion beam is extracted from the extraction electrode 32. When the substrate 26 is irradiated with this ion beam, the substrate 26 is milled according to the ion beam. At the time of this milling process, the substrate holder is configured as follows in order to prevent the pattern on the substrate 26 from being damaged and the resist from burning.
【００１６】基板ホルダは、図１に示すように、基板保
持台２８、基板抑え３０を備えて構成されている。基板
保持台２８は、４００×５００ｍｍの大きさに形成され
た基板２６を装着可能な基板装着部３４が形成されてい
る。この基板装着部３４は長手方向に沿った中心線を凸
部として湾曲した形状に成っている。すなわち基板装着
部３４の表面はほぼ円弧形状に形成されている。そして
基板装着部３４のほぼ中央部には一対のガス通路３６、
３８が形成されており、ガス導入口４０からＨｅガスま
たはプロセスガスが導入され、ガス排出口４２から排出
されるようになっている。さらに基板保持台２８の内部
には冷却水通路４４が形成されており、冷却水導入口４
６から導入された冷却水が冷却水通路４４、冷却水排出
口４８を介して排出され、基板保持台２８を冷却するよ
うになっている。As shown in FIG. 1, the substrate holder comprises a substrate holder 28 and a substrate retainer 30. The substrate holder 28 is provided with a substrate mounting portion 34 on which the substrate 26 having a size of 400 × 500 mm can be mounted. The board mounting portion 34 has a curved shape with a center line along the longitudinal direction as a convex portion. That is, the surface of the board mounting portion 34 is formed in a substantially arc shape. A pair of gas passages 36 are provided at the substantially central portion of the board mounting portion 34.
38 is formed, and He gas or process gas is introduced from the gas introduction port 40 and is discharged from the gas discharge port 42. Further, a cooling water passage 44 is formed inside the substrate holding table 28, and the cooling water inlet 4
The cooling water introduced from 6 is discharged through the cooling water passage 44 and the cooling water discharge port 48 to cool the substrate holding table 28.
【００１７】また基板保持台２８の端部には、基板抑え
３０が着脱自在に装着されるようになっている。すなわ
ち基板抑え３０は、基板保持台２８の基板装着部３４に
装着された基板２６の端部を基板保持台２８側に押圧し
て基板２６を基板保持台２８に保持させるようになって
いる。A substrate retainer 30 is detachably attached to the end of the substrate holder 28. That is, the substrate retainer 30 presses the end portion of the substrate 26 mounted on the substrate mounting portion 34 of the substrate holding base 28 toward the substrate holding base 28 side to hold the substrate 26 on the substrate holding base 28.
【００１８】上記構成において、基板保持台２８に装着
された基板２６を基板抑え３０で押圧して基板２６を保
持した時に、数Ｔｏｒｒ〜５０ＴｏｒｒのＨｅガスまた
はプロセスガスをガス通路３６に導入すると、基板２６
と基板装着部３６との間にギャップ５０が形成される。
この場合、基板２６が基板装着部３４の表面形状に沿っ
て湾曲しているので、ギャップ５０は０〜５００μｍに
確保することができ、高効率な熱交換が行なえる。In the above structure, when the substrate 26 mounted on the substrate holder 28 is pressed by the substrate retainer 30 to hold the substrate 26, if He gas or process gas of several Torr to 50 Torr is introduced into the gas passage 36, Board 26
A gap 50 is formed between the substrate mounting portion 36 and the substrate mounting portion 36.
In this case, since the substrate 26 is curved along the surface shape of the substrate mounting portion 34, the gap 50 can be ensured to be 0 to 500 μm, and highly efficient heat exchange can be performed.
【００１９】ここで、ガス通路３６に導入されるガスの
圧力と基板・基板装着部間の熱通過率との関係を測定し
たところ、図３に示すような特性が得られた。When the relationship between the pressure of the gas introduced into the gas passage 36 and the heat transfer coefficient between the substrate and the substrate mounting portion was measured, the characteristics shown in FIG. 3 were obtained.
【００２０】図３から、ギャップ５０を１０μｍ、１３
０μｍとし、ガスとしてＣＣＩ４、Ｎ2、Ｈｅを用い、
各ガスの圧力を高くすると、ガス種やギャップによって
熱通過率Ｑが変化することがわかる。そして冷却ガスの
圧力としては、冷却ガスの圧力と熱通過率Ｑとの関係が
比例している圧力領域で用いることが望ましく、ガス圧
としては、数Ｔｏｒｒ〜５０Ｔｏｒｒとすることが望ま
しい。From FIG. 3, the gap 50 is set to 10 μm, 13
0 μm, using CCI4, N 2 and He as gas,
It can be seen that when the pressure of each gas is increased, the heat transmission rate Q changes depending on the gas type and the gap. The pressure of the cooling gas is preferably used in a pressure range in which the relationship between the pressure of the cooling gas and the heat transmission rate Q is proportional, and the gas pressure is preferably several Torr to 50 Torr.
【００２１】一方、基板２６と基板装着部３４とのギャ
ップｄと熱通過率Ｑとの関係を測定したところ、図４に
示すような測定結果が得られた。図４から、ガス種がＨ
ｅなら、Ａ点以下のギャップが望ましい。このＡ点の距
離はガス種、ガス圧から求められる平均自由行程に相当
する。さらに図４から、装置の構造、寸法精度を考慮す
ると、ギャップｄとしては０〜５００μｍが望ましい。On the other hand, when the relationship between the heat transmission rate Q and the gap d between the substrate 26 and the substrate mounting portion 34 was measured, the measurement results shown in FIG. 4 were obtained. From FIG. 4, the gas species is H
If it is e, it is desirable that the gap is A point or less. The distance at point A corresponds to the mean free path obtained from the gas type and gas pressure. Further, from FIG. 4, considering the structure and dimensional accuracy of the device, the gap d is preferably 0 to 500 μm.
【００２２】次に、基板ホルダの他の実施例を図５に示
す。Next, another embodiment of the substrate holder is shown in FIG.
【００２３】本実施例は、基板保持台２８の基板装着部
３４にシ−ル部材としてＯリング５０を装着したもので
あり、他の構成は図１のものと同様であるので、同一の
ものには同一符号を付してそれらの説明は省略する。In this embodiment, an O-ring 50 is mounted as a seal member on the substrate mounting portion 34 of the substrate holder 28, and the other structure is the same as that of FIG. Are denoted by the same reference numerals and the description thereof will be omitted.
【００２４】本実施例においては、基板２６の端部がＯ
リング５２を介して基板保持台２８に装着されるため、
ギャップ５０内のガスが真空容器１８内に排出されるの
を防止することができる。In this embodiment, the edge of the substrate 26 is O
Since it is attached to the substrate holder 28 via the ring 52,
It is possible to prevent the gas in the gap 50 from being discharged into the vacuum container 18.
【００２５】次に、基板ホルダの第３実施例を図６に従
って説明する。Next, a third embodiment of the substrate holder will be described with reference to FIG.
【００２６】本実施例は、基板保持台２８の基板装着部
３４に、突起５４を基板装着部３４の全面に渡って膨出
形成するとともに、基板装着部３４の端部にＯリング５
２を装着するようにしたものであり、他の構成は図１の
ものと同様であるので、同一のものには同一符号を付し
てそれらの説明は省略する。In this embodiment, a protrusion 54 is formed on the substrate mounting portion 34 of the substrate holder 28 so as to bulge over the entire surface of the substrate mounting portion 34, and an O-ring 5 is formed on the end portion of the substrate mounting portion 34.
2 is mounted, and the other structure is the same as that of FIG. 1, and therefore, the same components are designated by the same reference numerals and the description thereof will be omitted.
【００２７】各突起５４は、基板保持台２８からの高さ
が同一の高さとなるように設定されており、各突起３４
が基板３４に分散して配置されている。このため基板２
６を突起５４を介して基板保持台２８に装着すると、基
板２６と基板保持台２８とのギャップ５０を均一にする
ことができ、基板２６全体を均一に冷却することができ
る。The heights of the projections 54 from the substrate holding table 28 are set to be the same, and the projections 34 are set to the same height.
Are dispersedly arranged on the substrate 34. Therefore, the substrate 2
When 6 is mounted on the substrate holding base 28 via the protrusion 54, the gap 50 between the substrate 26 and the substrate holding base 28 can be made uniform, and the entire substrate 26 can be cooled uniformly.
【００２８】[0028]
【発明の効果】以上説明したように、本発明によれば、
基板保持台の基板装着部を、その表面が長手方向に沿っ
た中心線を凸部として湾曲した形状となっているため、
基板を大型化しても、基板・基板保持台間のギャップを
一定の範囲に確保することができ、基板が大型化しても
基板のガス冷却効果が低下するのを防止することができ
る。また基板装着部に突起を膨出形成すると、基板全体
を均一に冷却することができる。また本発明による基板
ホルダを用いたイオンビ−ムミリング装置では、基板の
ガス冷却効果が低下するのを防止できるため、基板上の
パタ−ンの損傷や、レジスタの焼き付けを防止すること
ができる。As described above, according to the present invention,
Since the surface of the board mounting portion of the board holding base is curved with the center line along the longitudinal direction as a convex portion,
Even if the substrate is increased in size, the gap between the substrate and the substrate holder can be secured within a certain range, and it is possible to prevent the gas cooling effect of the substrate from being lowered even if the substrate is increased in size. Further, when the protrusion is formed to bulge on the substrate mounting portion, the entire substrate can be cooled uniformly. Further, in the ion beam milling apparatus using the substrate holder according to the present invention, it is possible to prevent the gas cooling effect of the substrate from being lowered, so that it is possible to prevent the pattern on the substrate from being damaged and the register from being burned.
【図１】本発明に係る基板ホルダの第１実施例を示す縦
断面図である。FIG. 1 is a vertical sectional view showing a first embodiment of a substrate holder according to the present invention.
【図２】イオンビ−ムミリング装置の全体構成図であ
る。FIG. 2 is an overall configuration diagram of an ion beam milling device.
【図３】気体圧力と熱通過率との関係を示す特性図であ
る。FIG. 3 is a characteristic diagram showing the relationship between gas pressure and heat transfer rate.
【図４】基板・基板保持台間のギャップと熱通過率との
関係を示す特性図である。FIG. 4 is a characteristic diagram showing a relationship between a heat transfer rate and a gap between a substrate and a substrate holder.
【図５】基板ホルダの第２実施例を示す縦断面図であ
る。FIG. 5 is a vertical sectional view showing a second embodiment of the substrate holder.
【図６】基板ホルダの第３実施例を示す縦断面図であ
る。FIG. 6 is a vertical cross-sectional view showing a third embodiment of the substrate holder.
１８ 真空容器 ２４ イオン源 ２６ 基板 ２８ 基板保持台 ３０ 基板抑え ３６、３８ ガス通路 ４４ 冷却水通路 ５０ ギャップ ５２ Ｏリング ５４ 突起 18 Vacuum Container 24 Ion Source 26 Substrate 28 Substrate Holding Base 30 Substrate Suppressor 36, 38 Gas Passage 44 Cooling Water Passage 50 Gap 52 O-ring 54 Protrusion
Claims (7)
部を有する基板保持台と、基板保持台の基板装着部に装
着された基板を基板保持台側に押圧する基板押さえとを
備え、前記基板装着部の内部には基板装着部の表面と基
板との間隙を折り返し点とするガス通路が形成され、前
記基板装着部は、その表面が長手方向に沿った中心線を
凸部として湾曲している基板ホルダ。1. A substrate holding base having a substrate mounting portion on which a substrate is mountable, and a substrate retainer for pressing the substrate mounted on the substrate mounting portion of the substrate holding base toward the substrate holding base. A gas passage having a gap between the surface of the substrate mounting portion and the substrate as a turning point is formed inside the substrate mounting portion, and the surface of the substrate mounting portion is curved with a center line along the longitudinal direction as a convex portion. Board holder doing.
部を有する基板保持台と、基板保持台の基板装着部に装
着された基板を基板保持台側へ押圧する基板押さえとを
備え、前記基板装着部の内部には基板装着部の表面と基
板との間隙を折り返し点とするガス通路が形成され、前
記基板装着部は、その表面が長手方向に沿った中心線を
凸部として湾曲し、且つ湾曲した表面に基板を保持する
ための突起が複数個膨出形成されている基板ホルダ。2. A substrate holding base having a substrate mounting portion on which a substrate is mountable, and a substrate retainer for pressing the substrate mounted on the substrate mounting portion of the substrate holding base toward the substrate holding base. A gas passage having a gap between the surface of the substrate mounting portion and the substrate as a turning point is formed inside the substrate mounting portion, and the surface of the substrate mounting portion is curved with a center line along the longitudinal direction as a convex portion. The substrate holder has a plurality of protrusions formed on the curved surface for holding the substrate.
は、基板装着部表面の中心部から端部にわたって分散し
て配置され、各突起はその長さが同一に設定されている
請求項２記載の基板ホルダ。3. A plurality of protrusions bulged and formed on the substrate mounting portion are dispersedly arranged from the central portion to the end portion of the surface of the substrate mounting portion, and each protrusion is set to have the same length. Item 2. The substrate holder according to Item 2.
台との間隙にガス通路を介して指定の圧力のガスを供給
したときに、基板と基板保持台との間隙が０〜５００μ
ｍとなる形状に設定されている請求項１、２または３記
載の基板ホルダ。4. The curved surface of the substrate mounting portion has a gap between the substrate and the substrate holder of 0 to 500 μm when a gas having a specified pressure is supplied to the gap between the substrate and the substrate holder through a gas passage.
The substrate holder according to claim 1, 2 or 3, which is set to have a shape of m.
接触する基板装着部との間からガスが排出するのを阻止
するシール部材が装着されている請求項１、２、３また
は４記載の基板ホルダ。5. The substrate mounting portion is mounted with a seal member for preventing gas from being discharged from between the substrate end portion and the substrate mounting portion in contact with the substrate end portion. Alternatively, the substrate holder described in 4.
めの冷却水通路が形成されている請求項１、２、３、４
または５記載の基板ホルダ。6. The cooling water passage for cooling the substrate holder is formed in the substrate holder.
Alternatively, the substrate holder described in 5.
と、真空状態に維持された空間部に基板ホルダを収納す
る真空容器と、真空容器内に収納された基板ホルダの基
板に向けてイオンビームを照射するイオン源とを備えた
イオンビームミリング装置において、基板ホルダとして
請求項１、２、３、４、５または６記載のものを用いて
なることを特徴とするイオンビームミリング装置。7. A substrate holder for holding a substrate as a sample, a vacuum container for housing the substrate holder in a space maintained in a vacuum state, and an ion beam directed toward the substrate of the substrate holder housed in the vacuum container. An ion beam milling device provided with an ion source for irradiating the ion beam, wherein the substrate holder according to claim 1, 2, 3, 4, 5 or 6 is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5089595A JP3237046B2 (en) | 1995-03-10 | 1995-03-10 | Substrate holder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5089595A JP3237046B2 (en) | 1995-03-10 | 1995-03-10 | Substrate holder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08250472A true JPH08250472A (en) | 1996-09-27 |
| JP3237046B2 JP3237046B2 (en) | 2001-12-10 |
Family
ID=12871483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5089595A Expired - Fee Related JP3237046B2 (en) | 1995-03-10 | 1995-03-10 | Substrate holder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3237046B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100337108B1 (en) * | 1999-11-09 | 2002-05-16 | 정기로 | Apparatus for cooling a semiconductor wafer |
| JPWO2008053929A1 (en) * | 2006-11-02 | 2010-02-25 | 東京エレクトロン株式会社 | Micro structure inspection apparatus, micro structure inspection method, and substrate holding apparatus |
| JP2014517504A (en) * | 2011-04-18 | 2014-07-17 | エコール ポリテクニック | Device for thermal control in an optical element and related thermal control method |
| WO2017030315A1 (en) * | 2015-08-19 | 2017-02-23 | (주) 에스엔텍 | Sample mount for deposition apparatus, deposition apparatus having said sample mount |
| CN112764185A (en) * | 2020-12-30 | 2021-05-07 | 四川中科朗星光电科技有限公司 | Optical lens, lens cone and air cooling structure |
-
1995
- 1995-03-10 JP JP5089595A patent/JP3237046B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100337108B1 (en) * | 1999-11-09 | 2002-05-16 | 정기로 | Apparatus for cooling a semiconductor wafer |
| JPWO2008053929A1 (en) * | 2006-11-02 | 2010-02-25 | 東京エレクトロン株式会社 | Micro structure inspection apparatus, micro structure inspection method, and substrate holding apparatus |
| JP2014517504A (en) * | 2011-04-18 | 2014-07-17 | エコール ポリテクニック | Device for thermal control in an optical element and related thermal control method |
| US9293891B2 (en) | 2011-04-18 | 2016-03-22 | Ecole Polytechnique | Device for managing heat in an optical element, and related heat-management method |
| WO2017030315A1 (en) * | 2015-08-19 | 2017-02-23 | (주) 에스엔텍 | Sample mount for deposition apparatus, deposition apparatus having said sample mount |
| CN112764185A (en) * | 2020-12-30 | 2021-05-07 | 四川中科朗星光电科技有限公司 | Optical lens, lens cone and air cooling structure |
| CN112764185B (en) * | 2020-12-30 | 2023-08-08 | 四川中科朗星光电科技有限公司 | Optical lens, lens cone and air cooling structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3237046B2 (en) | 2001-12-10 |
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