JP3237046B2 - Substrate holder - Google Patents
Substrate holderInfo
- Publication number
- JP3237046B2 JP3237046B2 JP5089595A JP5089595A JP3237046B2 JP 3237046 B2 JP3237046 B2 JP 3237046B2 JP 5089595 A JP5089595 A JP 5089595A JP 5089595 A JP5089595 A JP 5089595A JP 3237046 B2 JP3237046 B2 JP 3237046B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mounting portion
- substrate holder
- holder
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板ホルダに係り、特
に、イオンビ−ムミリング装置によりミリング加工され
る大型基板、例えば液晶基板を保持するに好適な基板ホ
ルダおよびこの基板ホルダに保持された基板をミリング
加工するイオンビ−ムミリング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holder and, more particularly, to a large substrate to be milled by an ion beam mill, for example, a substrate holder suitable for holding a liquid crystal substrate and a substrate held by the substrate holder. The present invention relates to an ion beam milling apparatus for performing milling.
【０００２】[0002]
【従来の技術】液晶基板などの大型基板をイオンビ−ム
ミリング装置を用いてミリング加工するに際しては、基
板をガスにより冷却するガス冷却方式が採用されてい
る。この場合基板を基板保持台にに保持させるととも
に、基板保持台に冷却水通路とガス通路を形成し、基板
と基板保持台との間に０〜５００μｍのギャップを形成
し、このギャップ内にガス圧が数Ｔｏｒｒ〜５０Ｔｏｒ
ｒのＨｅガスまたはプロセスガス等を流し、ミリング加
工に伴って高温と成った基板と基板保持台間で熱交換を
行なって、基板を冷却することを行なわれている。2. Description of the Related Art When a large substrate such as a liquid crystal substrate is milled using an ion beam milling apparatus, a gas cooling system in which the substrate is cooled by a gas is employed. In this case, the substrate is held by the substrate holder, a cooling water passage and a gas passage are formed in the substrate holder, a gap of 0 to 500 μm is formed between the substrate and the substrate holder, and a gas is formed in the gap. Pressure is several Torr to 50 Torr
The substrate is cooled by flowing a He gas or a process gas of r, and performing heat exchange between the substrate and the substrate holding table, which have been heated to a high temperature due to milling.
【０００３】一方、ミリング加工を行なうときに、基板
に残留応力が発生するのを防止するために、例えば、特
開平３−８７３６６号公報に記載されているように、基
板を凸状にすることが行なわれている。また特開昭５５
−１５３３３３号公報に記載されているように、半導体
基板の製造行程でパタ−ンを転写するする時に、基板マ
スクの密着性を良くするために、基板を凸状にするとと
もに、基板に凹部を設けて基板とマクスとの剥がれを良
くするような手法が用いられている。On the other hand, in order to prevent the occurrence of residual stress in the substrate during the milling process, the substrate is made to have a convex shape, for example, as described in Japanese Patent Application Laid-Open No. 3-87366. Is being done. Japanese Patent Laid-Open No. 55
As described in JP-A-153333, when a pattern is transferred in a manufacturing process of a semiconductor substrate, in order to improve the adhesion of a substrate mask, the substrate is made convex and a concave portion is formed in the substrate. A method of improving the separation between the substrate and the mask by providing the same is used.
【０００４】[0004]
【発明が解決しようとする課題】しかし、従来技術で
は、基板保持台の基板取付け面が平坦になっているた
め、基板保持台に保持された基板にガスを噴射した時
に、基板の中央部付近の膨らみ量が増大し、基板と基板
保持台間の熱交換の効率が大きく低下するという問題点
がある。特に、液晶用ガラス基板のように基板が大型化
すると、基板と基板保持台間のギャップ内のガス圧で基
板中央部が真空容器内側に膨らむ量が増大する。なお、
特開昭６０−１０２７４２号公報に記載されているよう
に、基板保持台を凸状にすることも考えられるが、基板
と基板保持台とのギャップを一定の値に保てなければ熱
交換の効率が低下することになる。However, in the prior art, since the substrate mounting surface of the substrate holder is flat, when a gas is jetted onto the substrate held by the substrate holder, the gas is injected near the center of the substrate. The bulge amount of the substrate increases, and the efficiency of heat exchange between the substrate and the substrate holding table is greatly reduced. In particular, when the size of a substrate such as a glass substrate for liquid crystal is increased, the amount by which the central portion of the substrate expands inside the vacuum vessel due to the gas pressure in the gap between the substrate and the substrate holding table increases. In addition,
As described in Japanese Patent Application Laid-Open No. 60-102742, it is conceivable to make the substrate holding table convex, but if the gap between the substrate and the substrate holding table cannot be kept at a constant value, heat exchange is not possible. Efficiency will be reduced.
【０００５】本発明の目的は、基板と基板保持台とのギ
ャップを一定の範囲内に抑えて基板のガス冷却効果が低
下するのを防止することができる基板ホルダおよびイオ
ンビ−ムミリング装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate holder and an ion beam milling apparatus which can suppress a gas cooling effect of a substrate from being reduced by keeping a gap between a substrate and a substrate holding table within a predetermined range. It is in.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するため
に、本発明は、基板が装着可能に形成された基板装着部
を有する基板保持台と、基板保持台の基板装着部に装着
された基板の端部を基板保持台側へ押圧する基板押さえ
とを備え、前記基板装着部の中央部には基板装着部の表
面と基板との間隙を折り返し点とする一対のガス通路が
形成され、前記基板装着部は、その表面が長手方向に沿
った中心線を凸部として湾曲し、且つ湾曲した表面に基
板を保持するための突起が複数個膨出形成され、該複数
の突起は、基板装着部表面の中心部から端部にわたって
分散して配置され、各突起はその長さが同一に設定さ
れ、しかもガスの供給により前記基板装着部に装着され
た基板が前記基板装着部の表面形状に沿って湾曲し、基
板中央部の膨らむ量が増加しても、前記基板と基板保持
台との間に形成される間隙が、ガス冷却効果の低下を防
止できる範囲となるように、前記基板装着部が形成され
ている基板ホルダを構成したものである。SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a substrate holder having a substrate mounting part formed so that a substrate can be mounted, and a substrate holder mounted on the substrate holder of the substrate holder. A substrate holder that presses an end of the substrate toward the substrate holding table side, and a pair of gas passages having a gap between the surface of the substrate mounting portion and the substrate as a turning point is formed in a central portion of the substrate mounting portion, the substrate mounting portion is curved center line surface thereof along the longitudinal direction as the convex portion, and the projection for holding a substrate curved surface is a plurality bulge formed, the plurality of protrusions, the substrate The protrusions are arranged in a distributed manner from the center to the end of the surface of the mounting portion, and each projection has the same length, and is mounted on the substrate mounting portion by gas supply.
Substrate is curved along the surface shape of the substrate mounting portion,
Even if the amount of swelling at the center of the plate increases, the substrate and the substrate
The gap formed between the base and the table prevents the gas cooling effect from lowering.
The substrate mounting portion is formed so that it can be stopped.
Of the substrate holder.
【０００７】[0007]
【０００８】また、前記各基板ホルダを構成するに際し
ては、以下の要素を加えることが望ましい。Further, it is desirable to add the following elements when configuring each of the substrate holders.
【０００９】（１）基板装着部の湾曲面は、基板と基板
保持台との間隙にガス通路を介して指定の圧力のガスを
供給したときに、基板と基板保持台との間隙が０〜５０
０μｍとなる形状に設定されている。(1) When a gas having a specified pressure is supplied to the gap between the substrate and the substrate holder through a gas passage through the curved surface of the substrate mounting portion, the gap between the substrate and the substrate holder becomes zero. 50
The shape is set to be 0 μm.
【００１０】（２）基板装着部には、基板端部と基板端
部に接触する基板装着部との間からガスが排出するのを
阻止するシール部材が装着されている。(2) The substrate mounting portion is provided with a seal member for preventing gas from being discharged from between the substrate end portion and the substrate mounting portion in contact with the substrate end portion.
【００１１】（３）基板保持台には基板保持台を冷却す
るための冷却水通路が形成されている。(3) A cooling water passage for cooling the substrate holder is formed in the substrate holder.
【００１２】また、本発明は、前記基板ホルダの内いづ
れかの基板ホルダと、真空状態に維持された空間部に基
板ホルダを収納する真空容器と、真空容器内に収納され
た基板ホルダの基板に向けてイオンビ−ムを照射するイ
オン源とを備えたイオンビ−ムミリング装置を構成した
ものである。Further, the present invention provides a substrate holder of any one of the substrate holders, a vacuum container for storing the substrate holder in a space maintained in a vacuum state, and a substrate of the substrate holder stored in the vacuum container. An ion beam milling apparatus including an ion source for irradiating an ion beam toward the ion beam.
【００１３】[0013]
【作用】前記した手段によれば、基板保持台は、基板が
装着される基板装着部の表面が長手方向に沿った中心線
を凸部として湾曲し、且つ湾曲した表面には基板を保持
するための突起が複数個同一の長さで膨出形成され、基
板が各突起を介して基板装着部に装着され、前記湾曲し
た基板装着部と前記湾曲した基板との間に均一な間隙が
形成されているので、基板と基板保持台とのギャップ内
のガス圧によって、基板中央部が真空容器側に膨らむ量
が増加しても、基板と基板保持台とのギャップが拡がる
のを防止することができ、基板と基板保持台間の熱交換
の効率の低下を抑制することができる。さらに、基板装
着部に基板を保持するための突起を複数個膨出形成する
と、基板がこれら突起に装着された時に、基板と基板保
持台とのギャップを一定にすることができ、基板全体を
均一に冷却することができる。According to the above-mentioned means, the substrate holding table has the surface of the substrate mounting portion on which the substrate is mounted curved with the center line along the longitudinal direction as a convex portion , and holds the substrate on the curved surface.
Projections are formed to bulge out to the same length.
A plate is mounted on the substrate mounting portion via each projection, and
Uniform gap between the substrate mounting part and the curved substrate
Since it is formed, even if the gas pressure in the gap between the substrate and the substrate holder increases the amount of expansion of the central part of the substrate toward the vacuum vessel, the gap between the substrate and the substrate holder is prevented from expanding. Thus, it is possible to suppress a decrease in the efficiency of heat exchange between the substrate and the substrate holder. Further, when a plurality of protrusions for holding the substrate are formed in the substrate mounting portion by bulging, when the substrate is mounted on these protrusions, the gap between the substrate and the substrate holding table can be made constant, and the entire substrate can be formed. It can be cooled uniformly.
【００１４】[0014]
【実施例】以下、本発明の一実施例を図面に基づいて説
明する。An embodiment of the present invention will be described below with reference to the drawings.
【００１５】図１は本発明の一実施例を示す基板ホルダ
の縦断面図を示し、図２はイオンビ−ムミリング装置の
全体構成を示す。図２において、イオンビ−ムミリング
装置は、搬送用ロボット１０、真空排気装置１２、試料
準備室１４、ゲ−ト弁１６、真空容器（チャンバ）１
８、イオン源２０、真空排気装置２２等を備えて構成さ
れている。搬送用ロボット１０にはア−ム２４が連結さ
れており、ア−ム２４は試料準備室１４内に収納されて
いる。試料準備室１４は真空排気装置１２によって真空
状態に保たれており、ア−ム２４には基板２６が保持さ
れている。基板２６はア−ム２４に保持された状態で、
ゲ−ト弁１６を介して真空容器１８内に挿入される。真
空容器１８内は真空排気装置２２によって真空状態に保
たれている。そして基板２６は真空容器１８内の基板保
持台２８に装着されたとき、基板抑え３０によって保持
されるようになっている。イオン源２０からはプラズマ
が発生するようになっていおり、イオン源２０からプラ
ズマが発生すると引出電極３２からイオンビームが引き
出される。このイオンビームが基板２６に照射されると
イオンビームに従って基板２６にミリング加工が施され
る。このミリング加工時に、基板２６上のパタ−ンが損
傷したり、レジストが焼きつく等の不具合を防止するた
めに、基板ホルダが以下のように構成されている。FIG. 1 is a longitudinal sectional view of a substrate holder showing one embodiment of the present invention, and FIG. 2 shows an entire configuration of an ion beam milling apparatus. In FIG. 2, the ion beam milling apparatus includes a transfer robot 10, a vacuum exhaust unit 12, a sample preparation chamber 14, a gate valve 16, and a vacuum chamber (chamber) 1.
8, an ion source 20, an evacuation device 22, and the like. An arm 24 is connected to the transfer robot 10, and the arm 24 is housed in the sample preparation chamber 14. The sample preparation chamber 14 is maintained in a vacuum state by the evacuation device 12, and the arm 24 holds a substrate 26. The substrate 26 is held by the arm 24,
It is inserted into a vacuum vessel 18 through a gate valve 16. The inside of the vacuum vessel 18 is maintained in a vacuum state by a vacuum exhaust device 22. Then, when the substrate 26 is mounted on the substrate holding table 28 in the vacuum vessel 18, the substrate 26 is held by the substrate holder 30. Plasma is generated from the ion source 20, and when plasma is generated from the ion source 20, an ion beam is extracted from the extraction electrode 32. When the substrate 26 is irradiated with the ion beam, the substrate 26 is subjected to milling according to the ion beam. During the milling process, the substrate holder is configured as follows in order to prevent the pattern on the substrate 26 from being damaged and resist from burning.
【００１６】基板ホルダは、図１に示すように、基板保
持台２８、基板抑え３０を備えて構成されている。基板
保持台２８は、４００×５００ｍｍの大きさに形成され
た基板２６を装着可能な基板装着部３４が形成されてい
る。この基板装着部３４は長手方向に沿った中心線を凸
部として湾曲した形状に成っている。すなわち基板装着
部３４の表面はほぼ円弧形状に形成されている。そして
基板装着部３４のほぼ中央部には一対のガス通路３６、
３８が形成されており、ガス導入口４０からＨｅガスま
たはプロセスガスが導入され、ガス排出口４２から排出
されるようになっている。さらに基板保持台２８の内部
には冷却水通路４４が形成されており、冷却水導入口４
６から導入された冷却水が冷却水通路４４、冷却水排出
口４８を介して排出され、基板保持台２８を冷却するよ
うになっている。As shown in FIG. 1, the substrate holder is provided with a substrate holder 28 and a substrate holder 30. The substrate holding table 28 has a substrate mounting portion 34 on which the substrate 26 having a size of 400 × 500 mm can be mounted. The substrate mounting portion 34 has a curved shape with the center line along the longitudinal direction as a convex portion. That is, the surface of the substrate mounting portion 34 is formed in a substantially arc shape. A pair of gas passages 36 are provided at substantially the center of the substrate mounting portion 34,
A He gas or a process gas is introduced from a gas inlet 40 and discharged from a gas outlet 42. Further, a cooling water passage 44 is formed inside the substrate holding table 28, and the cooling water introduction port 4 is formed.
The cooling water introduced from 6 is discharged through a cooling water passage 44 and a cooling water discharge port 48 to cool the substrate holding table 28.
【００１７】また基板保持台２８の端部には、基板抑え
３０が着脱自在に装着されるようになっている。すなわ
ち基板抑え３０は、基板保持台２８の基板装着部３４に
装着された基板２６の端部を基板保持台２８側に押圧し
て基板２６を基板保持台２８に保持させるようになって
いる。At the end of the substrate holding table 28, a substrate holder 30 is removably mounted. That is, the substrate holder 30 presses the end of the substrate 26 mounted on the substrate mounting portion 34 of the substrate holder 28 toward the substrate holder 28 to hold the substrate 26 on the substrate holder 28.
【００１８】上記構成において、基板保持台２８に装着
された基板２６を基板抑え３０で押圧して基板２６を保
持した時に、数Ｔｏｒｒ〜５０ＴｏｒｒのＨｅガスまた
はプロセスガスをガス通路３６に導入すると、基板２６
と基板装着部３６との間にギャップ５０が形成される。
この場合、基板２６が基板装着部３４の表面形状に沿っ
て湾曲しているので、ギャップ５０は０〜５００μｍに
確保することができ、高効率な熱交換が行なえる。In the above configuration, when the substrate 26 mounted on the substrate holding table 28 is pressed by the substrate holder 30 and the substrate 26 is held, when He gas or process gas of several Torr to 50 Torr is introduced into the gas passage 36, Substrate 26
A gap 50 is formed between the substrate and the substrate mounting portion 36.
In this case, since the substrate 26 is curved along the surface shape of the substrate mounting portion 34, the gap 50 can be secured at 0 to 500 μm, and high-efficiency heat exchange can be performed.
【００１９】ここで、ガス通路３６に導入されるガスの
圧力と基板・基板装着部間の熱通過率との関係を測定し
たところ、図３に示すような特性が得られた。Here, when the relationship between the pressure of the gas introduced into the gas passage 36 and the heat transmittance between the substrate and the substrate mounting portion was measured, characteristics as shown in FIG. 3 were obtained.
【００２０】図３から、ギャップ５０を１０μｍ、１３
０μｍとし、ガスとしてＣＣＩ４、Ｎ2、Ｈｅを用い、
各ガスの圧力を高くすると、ガス種やギャップによって
熱通過率Ｑが変化することがわかる。そして冷却ガスの
圧力としては、冷却ガスの圧力と熱通過率Ｑとの関係が
比例している圧力領域で用いることが望ましく、ガス圧
としては、数Ｔｏｒｒ〜５０Ｔｏｒｒとすることが望ま
しい。From FIG. 3, the gap 50 is set to 10 μm,
0 μm, and using CCI4, N 2 , He as a gas,
It can be seen that when the pressure of each gas is increased, the heat transmittance Q changes depending on the gas type and the gap. The pressure of the cooling gas is preferably used in a pressure region where the relationship between the pressure of the cooling gas and the heat transfer rate Q is proportional, and the gas pressure is preferably several Torr to 50 Torr.
【００２１】一方、基板２６と基板装着部３４とのギャ
ップｄと熱通過率Ｑとの関係を測定したところ、図４に
示すような測定結果が得られた。図４から、ガス種がＨ
ｅなら、Ａ点以下のギャップが望ましい。このＡ点の距
離はガス種、ガス圧から求められる平均自由行程に相当
する。さらに図４から、装置の構造、寸法精度を考慮す
ると、ギャップｄとしては０〜５００μｍが望ましい。On the other hand, when the relationship between the gap d between the substrate 26 and the substrate mounting portion 34 and the heat transmittance Q was measured, the measurement results as shown in FIG. 4 were obtained. From FIG. 4, the gas type is H
In the case of e, a gap of point A or less is desirable. The distance at point A corresponds to the mean free path obtained from the gas type and gas pressure. Further, from FIG. 4, in consideration of the structure and dimensional accuracy of the device, the gap d is desirably 0 to 500 μm.
【００２２】次に、基板ホルダの他の実施例を図５に示
す。Next, another embodiment of the substrate holder is shown in FIG.
【００２３】本実施例は、基板保持台２８の基板装着部
３４にシ−ル部材としてＯリング５０を装着したもので
あり、他の構成は図１のものと同様であるので、同一の
ものには同一符号を付してそれらの説明は省略する。In this embodiment, an O-ring 50 is mounted as a seal member on a substrate mounting portion 34 of a substrate holding table 28. The other configuration is the same as that of FIG. Are denoted by the same reference numerals, and their description is omitted.
【００２４】本実施例においては、基板２６の端部がＯ
リング５２を介して基板保持台２８に装着されるため、
ギャップ５０内のガスが真空容器１８内に排出されるの
を防止することができる。In this embodiment, the end of the substrate 26 is O
Since it is mounted on the substrate holding table 28 via the ring 52,
The gas in the gap 50 can be prevented from being discharged into the vacuum vessel 18.
【００２５】次に、基板ホルダの第３実施例を図６に従
って説明する。Next, a third embodiment of the substrate holder will be described with reference to FIG.
【００２６】本実施例は、基板保持台２８の基板装着部
３４に、突起５４を基板装着部３４の全面に渡って膨出
形成するとともに、基板装着部３４の端部にＯリング５
２を装着するようにしたものであり、他の構成は図１の
ものと同様であるので、同一のものには同一符号を付し
てそれらの説明は省略する。In the present embodiment, a projection 54 is formed on the substrate mounting portion 34 of the substrate holding table 28 so as to protrude over the entire surface of the substrate mounting portion 34, and an O-ring 5 is formed on the end of the substrate mounting portion 34.
2, and the other configuration is the same as that of FIG. 1. Therefore, the same components are denoted by the same reference numerals and description thereof is omitted.
【００２７】各突起５４は、基板保持台２８からの高さ
が同一の高さとなるように設定されており、各突起３４
が基板３４に分散して配置されている。このため基板２
６を突起５４を介して基板保持台２８に装着すると、基
板２６と基板保持台２８とのギャップ５０を均一にする
ことができ、基板２６全体を均一に冷却することができ
る。Each of the projections 54 is set so that the height from the substrate holding table 28 is the same.
Are dispersedly arranged on the substrate 34. Therefore, the substrate 2
When the substrate 6 is mounted on the substrate holder 28 via the protrusion 54, the gap 50 between the substrate 26 and the substrate holder 28 can be made uniform, and the entire substrate 26 can be cooled uniformly.
【００２８】[0028]
【発明の効果】以上説明したように、本発明によれば、
基板保持台の基板装着部を、その表面が長手方向に沿っ
た中心線を凸部として湾曲した形状となっているため、
基板を大型化しても、基板・基板保持台間のギャップを
一定の範囲に確保することができ、基板が大型化しても
基板のガス冷却効果が低下するのを防止することができ
る。また基板装着部に突起を膨出形成すると、基板全体
を均一に冷却することができる。また本発明による基板
ホルダを用いたイオンビ−ムミリング装置では、基板の
ガス冷却効果が低下するのを防止できるため、基板上の
パタ−ンの損傷や、レジスタの焼き付けを防止すること
ができる。As described above, according to the present invention,
Since the substrate mounting part of the substrate holding table has a surface whose surface is curved with the center line along the longitudinal direction as a convex part,
Even when the size of the substrate is increased, the gap between the substrate and the substrate holder can be ensured within a certain range, and even when the size of the substrate is increased, the gas cooling effect of the substrate can be prevented from being reduced. In addition, when the protrusion is formed on the substrate mounting portion, the entire substrate can be uniformly cooled. Further, in the ion beam milling apparatus using the substrate holder according to the present invention, since the gas cooling effect of the substrate can be prevented from being reduced, it is possible to prevent the pattern on the substrate from being damaged and the register from being burned.
【図１】本発明に係る基板ホルダの第１実施例を示す縦
断面図である。FIG. 1 is a longitudinal sectional view showing a first embodiment of a substrate holder according to the present invention.
【図２】イオンビ−ムミリング装置の全体構成図であ
る。FIG. 2 is an overall configuration diagram of an ion beam milling apparatus.
【図３】気体圧力と熱通過率との関係を示す特性図であ
る。FIG. 3 is a characteristic diagram showing a relationship between a gas pressure and a heat transmittance.
【図４】基板・基板保持台間のギャップと熱通過率との
関係を示す特性図である。FIG. 4 is a characteristic diagram showing a relationship between a gap between a substrate and a substrate holding table and a heat transmittance.
【図５】基板ホルダの第２実施例を示す縦断面図であ
る。FIG. 5 is a longitudinal sectional view showing a second embodiment of the substrate holder.
【図６】基板ホルダの第３実施例を示す縦断面図であ
る。FIG. 6 is a longitudinal sectional view showing a third embodiment of the substrate holder.
１８ 真空容器 ２４ イオン源 ２６ 基板 ２８ 基板保持台 ３０ 基板抑え ３６、３８ ガス通路 ４４ 冷却水通路 ５０ ギャップ ５２ Ｏリング ５４ 突起 18 Vacuum container 24 Ion source 26 Substrate 28 Substrate holder 30 Substrate holder 36, 38 Gas passage 44 Cooling water passage 50 Gap 52 O-ring 54 Projection
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−234426（ＪＰ，Ａ) 特開 昭60−257512（ＪＰ，Ａ) 特開 昭62−274625（ＪＰ，Ａ) 特開 平５−267436（ＪＰ，Ａ) 特開 平６−120176（ＪＰ，Ａ) 特開 平５−182930（ＪＰ，Ａ) 特開 平５−29222（ＪＰ，Ａ) 特開 平４−61325（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/3065 B23K 15/00 508 H01L 21/68 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-234426 (JP, A) JP-A-60-257512 (JP, A) JP-A-62-274625 (JP, A) JP-A-5-234 267436 (JP, A) JP-A-6-120176 (JP, A) JP-A-5-182930 (JP, A) JP-A-5-29222 (JP, A) JP-A-4-61325 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 21/3065 B23K 15/00 508 H01L 21/68
Claims (5)
を有する基板保持台と、基板保持台の基板装着部に装着
された基板の端部を基板保持台側へ押圧する基板押さえ
とを備え、前記基板装着部の中央部には基板装着部の表
面と基板との間隙を折り返し点とする一対のガス通路が
形成され、前記基板装着部は、その表面が長手方向に沿
った中心線を凸部として湾曲し、且つ湾曲した表面に基
板を保持するための突起が複数個膨出形成され、該複数
の突起は、基板装着部表面の中心部から端部にわたって
分散して配置され、各突起はその長さが同一に設定さ
れ、しかもガスの供給により前記基板装着部に装着され
た基板が前記基板装着部の表面形状に沿って湾曲し、基
板中央部の膨らむ量が増加しても、前記基板と基板保持
台との間に形成される間隙が、ガス冷却効果の低下を防
止できる範囲となるように、前記基板装着部が形成され
ている基板ホルダ。A substrate holder having a substrate mounting portion formed so that the substrate can be mounted thereon, and a substrate holder pressing an end of the substrate mounted on the substrate mounting portion of the substrate holder toward the substrate holding stage. A pair of gas passages is formed at a central portion of the substrate mounting portion, where a gap between the surface of the substrate mounting portion and the substrate is a turning point, and the substrate mounting portion has a center line whose surface extends in a longitudinal direction. curved as a convex portion, and the projection for holding a substrate curved surface is a plurality bulge formed, the plurality of protrusions are arranged distributed over the end from the central portion of the substrate mounting portion surface, Each projection has the same length and is mounted on the substrate mounting portion by gas supply.
Substrate is curved along the surface shape of the substrate mounting portion, and
Even if the amount of swelling at the center of the plate increases, the substrate and the substrate
The gap formed between the table and the table prevents the gas cooling effect from lowering.
The substrate mounting portion is formed so that it can be stopped.
In which the substrate holder.
台との間隙にガス通路を介して指定の圧力のガスを供給
したときに、基板と基板保持台との間隙が０〜５００μ
ｍとなる形状に設定されている請求項１記載の基板ホル
ダ。2. The curved surface of the substrate mounting portion is configured such that when a gas having a specified pressure is supplied to the gap between the substrate and the substrate holder through a gas passage, the gap between the substrate and the substrate holder is 0 to 500 μm.
The substrate holder according to claim 1, wherein the substrate holder is set to have a shape of m.
接触する基板装着部との間からガスが排出するのを阻止
するシール部材が装着されている請求項１、または２記
載の基板ホルダ。3. The substrate mounting portion is provided with a seal member for preventing gas from being discharged from between the substrate end portion and the substrate mounting portion in contact with the substrate end portion. Substrate holder.
めの冷却水通路が形成されている請求項１、２または３
記載の基板ホルダ。4. The substrate holding table is provided with a cooling water passage for cooling the substrate holding table.
The substrate holder as described.
と、真空状態に維持された空間部に基板ホルダを収納す
る真空容器と、真空容器内に収納された基板ホルダの基
板に向けてイオンビームを照射するイオン源とを備えた
イオンビームミリング装置において、基板ホルダとして
請求項１、２、３または４記載のものを用いてなること
を特徴とするイオンビームミリング装置。5. A substrate holder for holding a substrate as a sample, a vacuum container for storing the substrate holder in a space maintained in a vacuum state, and an ion beam directed toward the substrate of the substrate holder stored in the vacuum container. 5. An ion beam milling apparatus comprising: an ion source for irradiating an ion beam. 5. An ion beam milling apparatus comprising: a substrate holder according to claim 1, 2, 3 or 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5089595A JP3237046B2 (en) | 1995-03-10 | 1995-03-10 | Substrate holder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5089595A JP3237046B2 (en) | 1995-03-10 | 1995-03-10 | Substrate holder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08250472A JPH08250472A (en) | 1996-09-27 |
| JP3237046B2 true JP3237046B2 (en) | 2001-12-10 |
Family
ID=12871483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5089595A Expired - Fee Related JP3237046B2 (en) | 1995-03-10 | 1995-03-10 | Substrate holder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3237046B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100337108B1 (en) * | 1999-11-09 | 2002-05-16 | 정기로 | Apparatus for cooling a semiconductor wafer |
| KR101011491B1 (en) * | 2006-11-02 | 2011-01-31 | 도쿄엘렉트론가부시키가이샤 | Microstructure inspecting apparatus, microstructure inspecting method and substrate holding apparatus |
| FR2974251B1 (en) * | 2011-04-18 | 2013-11-01 | Ecole Polytech | DEVICE FOR THE THERMAL MANAGEMENT OF AN OPTICAL ELEMENT AND ASSOCIATED THERMAL MANAGEMENT METHOD. |
| WO2017030315A1 (en) * | 2015-08-19 | 2017-02-23 | (주) 에스엔텍 | Sample mount for deposition apparatus, deposition apparatus having said sample mount |
| CN112764185B (en) * | 2020-12-30 | 2023-08-08 | 四川中科朗星光电科技有限公司 | Optical lens, lens cone and air cooling structure |
-
1995
- 1995-03-10 JP JP5089595A patent/JP3237046B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08250472A (en) | 1996-09-27 |
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