JPH08234193A - Liquid crystal display device - Google Patents

Abstract

PURPOSE: To improve the adhesion of a color filter with a supporting base plate and to eliminate the unevenness of the transmissivity of respective colors RGB. CONSTITUTION: The liquid crystal display is provided with one side base plate 32 equipped with the color filter 12 corresponding to a display picture element, a transparent supporting body 18 and a transparent electrode 14, the other side base plate 33 equipped with a supporting body 9 and a picture element electrode 7 and liquid crystal material 17 interposed between the base plates 32 and 33. One side base plate is provided with the color filter 12 and a transparent thin film 18 different from the transparent supporting body at least at one part between the color filter and the transparent supporting body.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color liquid crystal display device, and more particularly to a liquid crystal display device incorporating a color filter.

[0002]

2. Description of the Related Art As a driving method of a matrix type liquid crystal display device used in a television or the like, there are a simple matrix method and an active matrix method.
The simple matrix system is a system in which striped electrodes are arranged on two substrates so as to be perpendicular to each other. The active matrix method is provided with a switching element for each pixel in order to prevent crosstalk between scanning lines which occurs in the simple matrix method.

FIG. 8 is a schematic sectional view of a conventional color active matrix liquid crystal display device. In FIG.
34 is a thin film transistor (TFT) which is a switching element
Is a TFT substrate portion having 32, and 32 is a counter substrate portion having a color filter. In the TFT substrate portion 34, 1 is a substrate, 7 is a pixel electrode, 9 is a field oxide film, 10 is a passivation layer, and 15 is a light distribution film. A thin film transistor is attached to each pixel of the TFT substrate 34. In this thin film transistor, 2 is a drain, 3 is a source, 4 is a channel, 5 is a gate, 6 is a source line, and 8 is a gate insulating film. In the counter substrate portion 32, 11 is a black matrix, 12
Is a color filter, 13 is a flattening film, 14 is a counter electrode, 15
Is a light distribution film, and 16 is a counter substrate. In addition, 17 is a liquid crystal material.

In a conventional active matrix liquid crystal display device, a substrate 1 (TFT) on which a thin film transistor is formed is used.
A substrate) and a counter substrate 16 (referred to as a CF substrate) on which the color filters 12 are formed are paired, and a liquid crystal 17 is sealed between them. As disclosed in JP-A-58-120287, a CF substrate has a black matrix 11 made of a metal such as Cr formed on a counter substrate 16 which is a glass substrate, and then a color filter.
12 is formed, and then a flattening film 13 and a transparent electrode (referred to as a counter electrode) 14 are formed. The black matrix 11 is formed into a film by a sputtering method or the like, and a predetermined pattern is formed by the photolithography process. The color filter 12 is
It is formed by a printing method, a pigment dispersion method, electrodeposition or the like.

In such a liquid crystal display device, the light transmittance corresponding to each color of R (red), G (green) and B (blue) of the color filter is represented by the refractive index and the film thickness (thickness) of each layer. If the cell configurations change and the cell configurations are the same, R, G, and B are different. FIG. 5 shows an example thereof. As described above, when the R, G, and B transmittances are different, there is a problem that a white display is colored.

Further, the above-mentioned black matrix 11
Is provided to prevent unnecessary light leakage and to prevent deterioration of contrast. In the current liquid crystal panel, the area where the liquid crystal alignment is disturbed and the disclination due to the lateral electric field and the TFT portion are black. Must be covered with a matrix. In the step of bonding the CF substrate 16 on which the black matrix 11 is formed and the TFT substrate 1, the pixel electrode 7 formed on the TFT substrate 1 and each pixel of the color filter 12 can be accurately aligned. Will be needed.

However, the accuracy of the current laminating apparatus is 5
Since it is only about μm and the black matrix is made larger with this as a bonding margin, the aperture ratio of the panel is lowered. As a result, there is a problem that the pixel pitch that can be realized is limited, and it is proposed to form a black matrix on the TFT substrate 1 (SID INTERNATIONAL SYMPOSIUM DIGEST OF
THE TECHNICAL PAPER P218-218).

[0008]

There is also a problem that the transparency is not good only by combining the color filter and the substrate.

However, when the black matrix is removed from the color filter substrate to form the color filter, defective adhesion of the color filter occurs during the process. For example, when selecting acrylic as the material for the color filter and glass as the material for the substrate,
The two materials are hard to stick to each other. Therefore, there is a problem that a missing pixel occurs. By the way, CF
Substrate yield is significantly reduced.

In view of the problems of the prior art as described above, the first object of the liquid crystal display device of the present invention is the light transmittance of each of the R, G and B color filters in the color active matrix type liquid crystal display device. Is to reduce the difference between the two and enable high quality display.

A second object of the present invention is to improve the adhesiveness between the color filter film and the glass substrate to improve the yield of the CF substrate.

(A third object of the present invention is to reduce the margin of the black matrix and enable display with a wide aperture ratio, high definition and high contrast.)

[0013]

Means and Actions for Solving the Problems As a result of diligent efforts to achieve these objects, the present inventors have obtained the following inventions. That is, the liquid crystal display device of the present invention includes a color filter corresponding to display pixels, one substrate including a transparent support and a transparent electrode, and the other substrate including a support and a transparent electrode. A liquid crystal material sandwiched between the one substrate and the other substrate, wherein the one substrate is at least a part between the color filter and the transparent support. And a transparent thin film different from the color filter and the transparent support.

A liquid crystal display device of the present invention will be described with reference to FIG. FIG. 1A is a sectional view of an active matrix liquid crystal display device in which a pixel portion and a peripheral drive circuit portion are integrally manufactured. 1 (b) is shown in FIG.
FIG. 3 is an enlarged view of a pixel portion 21 of the liquid crystal display device shown in (a). In FIG. 1A, 9 is a field oxide film that supports thin film TFTs, 19 is an opaque thin film that prevents light from entering the peripheral drive circuit section, 20 is a pixel electrode region, and 31 is a spacer. In FIG. 2, 18 is a transparent thin film. Other reference numerals are the same as those in the description of FIG.

In the present invention, as shown in FIG. 1 (b), the transparent thin film 1
8 is a color filter 12 and a counter substrate 1 serving as a transparent support.
Provide in at least a part of the space between 6. This transparent thin film 18 is
It may be provided over the entire space between the color filter 12 and the counter substrate 16.

In FIG. 1B, since the transparent thin film 18 exists in the entire electrode pixel area of the G color filter,
The transmittance of is improved. In this case, the optimum value can be obtained by selecting the thickness of each thin film, the refractive index, the cell thickness of the liquid crystal, and the refractive index.

FIG. 6 shows the result of optical simulation of transmittance. In FIG. 6A, the structure of the TFT substrate is the same, the transparent thin film 18 on the CF side does not exist, and
Thickness of 120, 130, 140, 150, 160nm
The relative transmittances with respect to the lights of the respective wavelengths of R, G, and B in the case of changing the above are shown. It can be seen that the G transmittance is low. In order to improve the G transmittance, the ITO film thickness of the counter electrode 14 is set to 150 nm, and the calculation result obtained by adding the transparent thin film 18 is shown in FIG. 6 (b). It was found that the rate would increase to 83%.

When a liquid crystal cell was prototyped under these conditions,
The uniformity of the R, G, and B transmittances was improved, and a higher quality liquid crystal cell was obtained.

FIG. 7A shows the cell gap dependence of the relative transmittances of R, G, and B, and FIG. 7B shows the relative transmittance when the transparent film 18 is added to G. If there is no transparent film, the R and G changes in different cycles, and the change in relative transmittance due to the cell gap change is large. On the other hand, when the transparent film is added, the G period approaches the R period, and a large margin due to the cell gap variation can be secured. As described above, since it is possible to select a better film thickness condition for G and R in which the transmittance changes drastically due to the change in the cell gap, it is possible to manufacture a panel with a large margin for the gap change in the cell, and to improve the panel yield. Greatly improved.

In this embodiment, the case where the transparent thin film 18 exists in the pixel electrode area of the G filter has been described.
If the interference condition is met, the transparent thin film 18 may not exist in the G filter and may exist in the pixel electrode region of another filter. Further, although the film thickness of the counter electrode has been described as 150 nm, other values may be used.

The transparent thin film 18 is preferably composed of a metal oxide such as ITO. Black Matrix 11
It is desirable to provide it on the substrate without the color filter 12 and above the TFT.

The present invention can be applied to a simple matrix liquid crystal display device as well as an active matrix liquid crystal display device.

In the case of an active matrix liquid crystal display device, amorphous Si, polycrystalline Si or single crystal Si is preferably used as the active layer of the thin film transistor.
With regard to the manufacturing method thereof or the method of forming it on the substrate, any of the methods currently used can be suitably used.

(Operation) According to the present invention, each pixel electrode region 20 of each R, G, B color filter is formed on the CF substrate.
In the (pixel electrode region is a region in the image display section where light used for display is transmitted), a color filter having a transparent thin film and a color filter having no transparent thin film are provided between the substrates, and R, G , B, the difference in light transmittance was reduced.

Further, in the active matrix liquid crystal, since the transparent thin film is present between the substrate and the color filter, the adhesion of the color filter is improved and the yield of the CF substrate is improved, so that the black matrix is formed on the TFT substrate. The above-mentioned configuration is practical, and a bonding margin between the TFT substrate and the CF substrate is no longer required as in the conventional case. Therefore, the margin of the black matrix is only the positional deviation margin when the black matrix and the color filter are formed on the TFT substrate by the method described above, and at present, this margin can be set to 2 μm or less. Yes, this enables a high-definition liquid crystal display device with a high aperture ratio, and
The difference in light transmittance between the R, G, and B colors can be reduced, and high-quality full-color display is possible.

Further, the deviation of the cycle of the fluctuation of the relative transmittances of R and G due to the fluctuation of the cell gap is reduced, the process margin of the gap accuracy is widened, and the yield is greatly improved.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited to these Examples.

Example 1 Example 1 is an example of a color active matrix liquid crystal display device in which a switching element and a peripheral drive circuit are integrated. In this liquid crystal display device, the substrate on the side having the switching element is made of a Si wafer.

FIG. 1 is a schematic sectional view of the liquid crystal display device of the first embodiment. In FIG. 1 (a), 1 is a Si substrate, 9 is an oxide film, 19 is an opaque film that hides the peripheral driving circuit, and 20 is a pixel electrode region (a pixel electrode region is a light used for display in the image display unit and for display). A transparent area), 21 is an image display unit.

Further, FIG. 1B is a schematic sectional view for explaining in detail the image display section 21 of the liquid crystal display device of FIG. 1A. In FIG. 1B, 2 is a drain, 3 is a source, 4 is a channel, 5 is a gate electrode, 6 is a source line, 7 is a pixel electrode,
8 is an insulating film, 10 is a passivation film, 11 is a black matrix, 12 is a color filter, 13 is a flattening film, 14 is a counter electrode, 15 is an alignment film, 16 is a glass substrate, 17 is a liquid crystal material, and 18 is a transparent alignment. It is a film.

The TFT substrate was manufactured as follows. Using a Si wafer as the substrate 1, a peripheral drive circuit is commercialized by a known single crystal wafer semiconductor process.
It is formed by the OS configuration. At this time, the liquid crystal display portion is covered with the field oxide film 9 (which becomes a light transmissive film). In Example 1, the thickness of the field oxide film was set to 1 μm.
Polycrystalline Si was deposited on the image display portion 21 to a thickness of about 250 nm by the low pressure CVD method. Source 3 and drain 2
Is ion. It was formed in a self-aligned manner by the implantation method.
Further, after forming the gate oxide film of the thin film transistor to 50 nm by pyrogenic oxidation, polycrystalline Si is deposited by the low pressure CVD method and the gate electrode 5 is formed by anisotropic etching. Ionize arsenic. Implantation was performed by an implantation method and further heat treatment was performed to form a thin film transistor.

An inorganic transparent member SiO _{2 is formed} on the TFT substrate.
(In Example 1, description is made using SiO ₂ , but an inorganic transparent member such as SiN _x or an organic resin may be used), and then the pixel electrode 7 made of ITO and SiN _{x are formed.}
After the passivation film 10 made of Cr was formed, the black matrix 11 made of Cr was formed on the passivation film 10, and the alignment film 15 made of polyimide was further formed. The CF substrate is a transparent thin film 1 on the glass substrate 16.
In No. 8, ITO was formed into a film by a sputtering method, a photoresist was applied and cured by a spinner, and then pattern exposure was performed using a predetermined mask and development was performed. The ITO is etched with an etchant composed of hydroiodic acid (HI), and then the resist is stripped to form a predetermined pattern of IT.
An O film was formed. This pattern is the color filter G
In the filter area of, ITO exists in all areas, and R,
In the B filter region, ITO is present in a portion other than the pixel electrode region 20 described above. That is, the transparent thin film (ITO) in the pixel electrode region is removed.

Further, chromium oxide (CrOx) is formed by a sputtering method, and CrOx in the pixel display section 21 is removed by the photolithography method using the photoresist described above.
An opaque film made of CrOx was formed on the outside of 21. The opaque film prevents the peripheral drive unit from being irradiated with light, and the color filter substrate 16 and the TFT substrate 1 are also provided.
Alignment marks necessary for bonding with good positional accuracy are formed on the outer portion of the pixel display portion 21.

In order to manufacture a panel having a high aperture ratio and high definition, it is required that the color filter substrate and the TFT substrate 1 be aligned (bonded) with accuracy, and currently, a bonding accuracy of ± 2.0 μm or less is required. There is. In the semiconductor process, a pattern similar to an alignment mark using alignment between a mask and a wafer is formed on the color filter substrate 16 and the TFT substrate 1. In the color filter substrate 16, as described above
A pattern as shown in FIG. 2a is formed using CrOx. On the TFT substrate 1, a pattern as shown in FIG. 2b is formed using Al formed as a wiring electrode. By aligning this pattern as shown in FIG. 2b and bonding the color filter substrate and the TFT substrate together, it is possible to achieve bonding of 2 μm or less. The method for producing the color filter layer 12 will be described below. B filter layer is chromo blue A3R as pigment
(Ciba-Geigy Co., Ltd.) is added to a 10% aqueous solution of a polyvinyl alcohol derivative and mixed and coated with a blue photosensitive resin by a spinner, and after curing, pattern exposure is performed using a predetermined mask, and a non-exposed portion is selectively removed with a developing solution. , B with a thickness of 2 μm
A filter layer was formed. The G filter was prepared in the same manner by using Lionol Green 2Y-301 (Toyo Ink Co., Ltd.) as a pigment, and the R filter was prepared by using Chromophtal red BRN (Ciba-Geigy Co.). The G pattern is in contact with the entire transparent thin film 18 (ITO), and the R and B color filter patterns are partially in contact with the transparent thin film 18 (ITO). Further, the patterns of R, B, and B are designed so as not to come into contact with each other at a distance. In order to flatten the surface on which these patterns were formed, an acrylic resin was applied by a spinner and cured to form a transparent flattening film 13 with a thickness of 2 μm. As a result, the surface flatness was improved to 0.2 μm or less. As a material of the flattening film 13, a polyamide resin, a polyimide resin, an epoxy resin, a transparent photoresist, or the like can be used.
Next, after forming the counter electrode 14 made of ITO, an alignment film 15 made of polyimide was formed.

Using these substrates, liquid crystal cell assembly, liquid crystal injection, and sealing were performed using a normal liquid crystal cell assembly process. Further, in order to obtain a transmissive liquid crystal panel, in this example, the Si portion below the oxide film 9 (SiO ₂ ) formed on the TFT substrate was removed by etching. Then, the portion removed by etching was reinforced with a resin or the like to complete the panel.

In this embodiment, the transparent thin film 18 on the CF substrate is used.
Improved the adhesion of the color filter 12, and a good CF substrate without defects was obtained. Therefore, the structure in which the black matrix is formed on the TFT substrate has become practical. The alignment margin of the black matrix was extremely small at 2 μm, and a high-definition and high-quality liquid crystal panel was obtained.

(Embodiment 2) FIG. 2 shows an example of a color active matrix liquid crystal display device in which a switching element and a peripheral drive circuit are integrated. FIG. 2A is a schematic cross-sectional view of the active matrix liquid crystal display device. FIG. 2B shows a schematic sectional view of the image display unit.

In this example, the quartz substrate 1 was used as the TFT substrate, and polycrystalline Si was used as the active layer. In this embodiment, a channel 4 of polycrystalline silicon is formed on a transparent quartz substrate 1, a surface gate oxide film is formed, and
The source line 6 is formed. Also, I connected to the drain 2
A pixel electrode 7 made of TO, a passivation film 10 covering the pixel electrode 7, and a black matrix 11 made of a metal film and an alignment film 15 were subsequently formed to form a TFT substrate.

The CF substrate was formed by forming SiO ₂ as a transparent thin film 18 on the glass substrate 16 and then patterning it into a predetermined pattern. As for the pattern, in the R filter area of the color filter, SiO ₂ exists in all areas, G,
In the B filter region, SiO ₂ exists in a portion other than the pixel electrode region 20 described above. That is, the transparent thin film (ITO) in the pixel electrode region is removed.

Further, after forming an opaque film 19 made of chromium (Cr) on the outside of the pixel display portion 21, R, G,
The color filter 12 of B was formed. Further flattening film 1
3 was formed, the counter electrode 14 made of ITO was formed, and then the alignment film 15 made of polyimide was formed.

Using these substrates, liquid crystal cell assembly, liquid crystal injection, and sealing were performed using a normal liquid crystal cell assembly process.

The transparent thin film 18 on the CF substrate improved the adhesion of the color filter 12, and a good CF substrate without defects was obtained. The uniformity of the R, G, and B transmittances was improved, and a higher quality liquid crystal cell was obtained. In addition, since a better film thickness condition can be selected for G and R in which the transmittance changes drastically due to changes in the cell gap, it is possible to manufacture a panel with a large margin for the gap fluctuation in the cell, and the panel yield is significantly increased. Improved.

(Embodiment 3) In this embodiment, a non-alkali glass (for example, Corning # 705) is used as a TFT substrate.
9) and amorphous silicon (a
-Si) was used. Inverse stagger type TFT on glass substrate
Then, a pixel electrode and a passivation film were formed. On the passivation film, 300 nm of AL was formed as a black matrix, and a predetermined pattern was formed by a photolithography process.

Further, an alignment film was formed to complete the TFT substrate.

The color filter substrate was manufactured in the same manner as in Example 2.

Using these substrates, liquid crystal cell assembly, liquid crystal injection, and sealing were performed using a normal liquid crystal cell assembly process.

The transparent thin film on the CF substrate improved the adhesion of the color filter, and a good CF substrate without defects was obtained. The uniformity of the R, G, and B transmittances was improved, and a higher quality liquid crystal cell was obtained. In addition, since a better film thickness condition can be selected for G and R in which the transmittance changes drastically due to changes in the cell gap, it is possible to manufacture a panel with a large margin for the gap fluctuation in the cell, and the panel yield is significantly increased. Improved.

Example 4 In this example, as the TFT substrate, a substrate in which a Si single crystal film was formed on a quartz substrate was used. This substrate is manufactured by Nikkei Microdevice 199
No. 4.10, P107. Porous Si having a thickness of 12 μm is formed on the surface of a Si wafer by anodic oxidation, and a Si single crystal layer is epitaxially grown on the surface.
The substrate and the quartz substrate are attached to each other and bonded by heating and dehydration reaction. Next, polishing is performed from the back surface of the Si wafer until the entire surface of the porous Si is exposed, and then 0.5 to 0.1 μm of SO
Leave the I layer.

Next, a TFT substrate was prepared using this single crystal Si. Other configurations are similar to those of the second embodiment. Since the active layer is made of single crystal Si, the driving frequency of the shift register can be increased and a high-definition and high-density liquid crystal display device can be obtained.

(Embodiment 5) FIG. 3A shows a schematic sectional view of an active matrix liquid crystal display device of this embodiment. Further, FIG. 3B shows a schematic sectional view of the image display unit. In the figure, 1 is a substrate, 2 is a drain, 3
Is a lease, 4 is a channel, 5 is a gate, 6 is a source line,
7 is a pixel electrode, 8 is an insulating film, 9 is an oxide film, 10 is a passivation film, 11 is a black matrix, 12 is a color filter, 13 is a flattening film, 14 is a counter electrode, 1
5 is an alignment film, 16 is a glass substrate, 17 is a liquid crystal, 18 is a transparent thin film, 19 is an opaque film, and 20 is a pixel electrode region (the pixel electrode region is a region through which light used in the image display unit and for display is transmitted). ). The TFT substrate was manufactured as follows. A silicon wafer is used as the substrate 1, and a peripheral drive circuit is formed in a CMOS structure by a known single crystal wafer semiconductor process. At this time, the liquid crystal display portion is covered with the field oxide film 9 (which becomes a light transmissive film). In this embodiment, the thickness of the field oxide film is set to 1 μm. Polycrystalline Si is deposited to a thickness of about 250 nm by the low pressure CVD method, and the lease and drain are made of ion. It was formed in a self-aligned manner by the implantation method. Further, a gate oxide film of the thin film transistor is formed to a thickness of 50 nm by pyrogenic oxidation, polycrystalline Si is deposited by a low pressure CVD method, and a gate 5 is formed by anisotropic etching. Ionize arsenic. Implantation was performed by an implantation method and further heat treatment was performed to form a thin film transistor.

An inorganic transparent member SiO _{2 is formed} on the TFT substrate.
(Although SiO ₂ is used in this embodiment, it may be an inorganic transparent member such as SiNx or an organic resin or the like), and then a pixel electrode 7 made of ITO and a passivation film 10 made of SiNx are formed. A black matrix 11 made of Cr is used as a passivation film 10
An alignment film 15 made of polyimide was further formed on the above. The CF substrate was formed by forming ITO as a transparent thin film 18 on the glass substrate 16 and then patterning it into a predetermined pattern. This pattern is arranged so that the ends thereof overlap with the R, G, B color filter layers. That is, the transparent thin film (ITO) in the pixel electrode region is removed. Further, after forming an opaque film 19 made of chromium oxide (CrOx) on the outside of the pixel display portion 21,
The R, G, B color filters 12 were formed.

Further, a flattening film 13 was formed, a counter electrode 14 made of ITO was formed, and then an alignment film 15 made of polyimide was formed.

Using these substrates, liquid crystal cell assembly liquid crystal injection and sealing were performed using a normal liquid crystal cell assembly process. Further, in order to obtain a transmissive liquid crystal panel, in this example, the Si portion below the oxide film 9 (SiO ₂ ) formed on the TFT substrate was removed by etching. The part removed by etching was reinforced with resin to complete the panel.

In this embodiment, the transparent thin film 18 on the CF substrate is used.
Improved the adhesion of the color filter 12, and a good CF substrate without defects was obtained. Therefore, a structure in which the black matrix is formed on the TFT substrate has become practical. The alignment margin of the black matrix was extremely small at 2 μm, and a high-definition and high-quality liquid crystal panel was obtained.

(Embodiment 6) FIG. 4A shows a schematic sectional view of a color active matrix liquid crystal display device of this embodiment, and FIG. 4B shows a schematic sectional view of an image display section.

In this example, the quartz substrate 1 was used as the TFT substrate, and polycrystalline Si was used as the active layer.
In this embodiment, a polycrystalline silicon channel 4 is formed on a transparent quartz substrate 1, a surface gate oxide film is formed, and then a source line 6 is formed. Further, a pixel electrode 7 made of ITO connected to the drain 2 and a passivation film 10 covering the pixel electrode 7 were formed, and subsequently a black matrix 11 made of a metal film and an alignment film 15 were formed to form a TFT substrate. The CF substrate was formed by forming SiO ₂ as a transparent thin film 18 on the glass substrate 16 and then patterning it into a predetermined pattern.

The pattern is arranged so that its ends overlap with the R, G, B color filter layers.
That is, the transparent thin film (ITO) in the pixel electrode region portion is removed. Further, after forming an opaque film 19 made of chromium (Cr) on the outside of the pixel display portion 21, the R, G, B color filters 12 were formed. Further, a flattening film 13 was formed, a counter electrode 14 made of ITO was formed, and then an alignment film 15 made of polyimide was formed.

Using these substrates, liquid crystal cell assembly and liquid crystal injection and sealing were performed using a normal liquid crystal cell assembly and process.

The transparent thin film 18 on the CF substrate improves the adhesiveness of the color filter 12 and has good C with no defects.
An F substrate was obtained.

(Embodiment 7) In this embodiment, a non-alkali glass (for example, Corning # 7059) is used as a TFT substrate.
Etc.) and amorphous silicon (α-
Si) was used. Reverse stagger type TFT on glass substrate
Then, a pixel electrode and a passivation film were formed. On the passivation film, 300 nm of AL was formed as a black matrix, and a predetermined pattern was formed by a photolithography process.

Further, an alignment film was formed to complete the TFT substrate.

The color filter substrate was manufactured in the same manner as in Example 2. Using these substrates, a liquid crystal cell assembly and a liquid crystal injection sealing were performed using a normal liquid crystal cell assembly process.

The transparent thin film on the CF substrate improved the adhesion of the color filter, and a good CF substrate without defects was obtained.

(Embodiment 8) In this embodiment, a substrate in which a Si single crystal film is formed on a quartz substrate is used as a TFT substrate. This substrate is manufactured by Nikkei Microdevices 1994.
No. 10. It is disclosed in P107. Porous Si having a thickness of 12 μm is formed on the surface of a Si wafer by anodic oxidation, and a Si single crystal layer is epitaxially grown on the surface. The substrate and the quartz substrate are attached to each other, and the substrates are bonded by heating and dehydration condensation reaction. Next, polishing is performed from the back surface of the Si wafer until the entire surface of the porous Si is exposed, leaving an SOI layer of 0.5 to 0.1 μm. Next, a TFT substrate was produced using this single crystal Si. Other configurations are the same as in Example 2, but since the active layer is single crystal Si, the drive frequency of the shift register can be increased, and a high-definition and high-density liquid crystal display device can be obtained.

(Example 9) In this example, a transparent thin film on a CF substrate was made of ITO. The CF is created in the first embodiment.
In the same manner as described above, the silicon substrate is used as the TFT substrate, and the process is advanced by the manufacturing method shown in the first embodiment.
The substrate is completed.

Using these substrates, liquid crystal cell assembly, liquid crystal injection, and sealing were performed using a normal liquid crystal cell assembly process.

The transparent thin film (ITO) on the CF substrate improved the adhesion of the color filter, and a good CF substrate without defects was obtained.

(Embodiment 10) FIG. 5A shows a schematic structural view of a simple matrix liquid crystal display device of the present embodiment.
In addition, a schematic plan view and a configuration diagram are shown in FIGS.

Further, FIG. 5D shows a schematic sectional view of the pixel display portion.

The counter substrate was prepared by an existing process.
The CF substrate is a transparent thin film 18 on the glass substrate 16
After forming the TO film, it was patterned into a predetermined pattern. This pattern is R, G, B color filter layer 1
2 and the end are arranged so as to overlap each other.
That is, the transparent thin film (ITO) in the pixel electrode region portion is removed. Further, a flattening film 13 is formed after the R, G, B color filters 12 are formed, and the counter electrode 1 made of ITO is formed.
4 was formed into a film and patterned into a predetermined pattern.

At the end, the alignment film 15 made of polyimide was formed.

Using these substrates, a liquid crystal cell assembly, liquid crystal injection, and sealing were performed using a normal liquid crystal cell assembly and process.

The transparent thin film 18 on the CF substrate improved the adhesion of the color filter 12, and a good CF substrate without defects was obtained.

Further, as shown in FIG. 5, as a display system,
It can be applied to any system such as TN cell GH cell compensation type STN cell.

Example 11 In this example, a transparent thin film on a color filter substrate was made with a silane coupling agent.
The color filter substrate is a glass substrate on which a silane coupling agent as a transparent thin film (for example, Nagase & Co.NP-100, Shin-Etsu Chemical KBM-503, KBM-403, KBP-41, etc.) is applied with a spinner.
It was dried to form a film of several tens of liters. Next, an RGB color filter was formed, a flattening film was further formed, and then a counter electrode made of ITO was formed to form an alignment film made of polyimide. In addition, as the TFT substrate, the process was advanced by the manufacturing method of Example 1 using a silicon wafer to complete the TFT substrate. Using these substrates, a liquid crystal cell assembly, injection, and sealing were performed using a normal liquid crystal cell assembly process.
The transparent thin film (silane coupling agent) on the color filter substrate improved the adhesion of the color filter, and a good color filter without defects was obtained.

[0076]

By forming a transparent thin film on at least a part of the CF substrate between the substrate and the color filter, the respective transmittances of R, G and B can be improved and more uniform characteristics can be obtained. A high quality liquid crystal display device was obtained.
In addition, fluctuations in transmittance due to fluctuations in cell gap are also reduced,
The process margin expanded and the yield improved.

Further, the transparent thin film improved the adhesion of the color filter, and the yield of the color filter was remarkably improved. In addition, the black matrix can be formed on the TFT substrate, the substrate bonding margin is reduced, the high aperture ratio,
It has become possible to manufacture high-definition liquid crystal display devices with high transmittance.

Furthermore, since the color filter and the light-shielding film are not arranged on one substrate but on each of the opposing substrates, high-precision alignment is not required.
Each pixel has a large aperture ratio. Therefore, the cost can be reduced and a bright liquid crystal display device can be obtained.

[Brief description of drawings]

FIG. 1 is a schematic sectional view of a first embodiment of the present invention.

FIG. 2 is a schematic sectional view of a second embodiment of the present invention.

FIG. 3 is a schematic cross-sectional view of Example 5 of the present invention.

FIG. 4 is a schematic cross-sectional view of Example 6 of the present invention.

FIG. 5 is a schematic diagram of Example 10 of the present invention.

FIG. 6 is a diagram showing a transmittance simulation result.

FIG. 7 is a diagram showing a simulation result of the transmittance of a liquid crystal layer depending on its thickness.

FIG. 8 is a schematic sectional view of a conventional color active matrix liquid crystal display device.

FIG. 9 is a plan view of the alignment mark according to the first embodiment.

[Explanation of symbols]

 1 substrate 2 drain 3 source 4 channel 5 gate 6 source line 7 pixel electrode 8 insulating film 9 field oxide film 10 passivation film 11 black matrix 12 color filter 13 planarizing film 14 counter electrode 15 alignment film 16 counter substrate 17 liquid crystal 18 transparent thin film 19 Opaque thin film 20 Pixel electrode area 21 Image display section

Claims (8)

[Claims] 1. A substrate including a color filter corresponding to a display pixel, a transparent support, and a transparent electrode; another substrate including a support and a pixel electrode; and the one substrate. And a liquid crystal material sandwiched between the other substrate, and the one substrate, at least a portion between the color filter and the transparent support, the one substrate, A liquid crystal display device having a transparent thin film different from the transparent support. 2. The other substrate also has a thin film transistor as a switching element for each pixel, and a black matrix on the transistor.
The liquid crystal display device according to item 1. 3. The liquid crystal display device according to claim 1, wherein the one substrate also has an opaque film outside the image display portion. 4. The support for the other substrate is a Si substrate from which a portion corresponding to the image display section has been removed.
4. The liquid crystal display device according to any one of 1 to 3. 5. The active layer of the transistor is single crystal Si
The liquid crystal display device according to claim 2, wherein the liquid crystal display device is formed of. 6. The liquid crystal display device according to claim 1, wherein the transparent thin film is made of a metal oxide. 7. The metal oxide is ITO.
The liquid crystal display device according to item 1. 8. The one substrate is transparent between the color filter of at least one of three primary color filters and the transparent support, and the color filter and the transparent support are different from each other over the entire color filter of the one color. The liquid crystal display device according to claim 1, further comprising a thin film.