JPH08233728A - Microscopic total reflection absorption spectrum measuring apparatus - Google Patents
Microscopic total reflection absorption spectrum measuring apparatusInfo
- Publication number
- JPH08233728A JPH08233728A JP4102895A JP4102895A JPH08233728A JP H08233728 A JPH08233728 A JP H08233728A JP 4102895 A JP4102895 A JP 4102895A JP 4102895 A JP4102895 A JP 4102895A JP H08233728 A JPH08233728 A JP H08233728A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- total reflection
- absorption spectrum
- spectrum measuring
- reflection absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、反射顕微鏡システムを
利用した全反射吸収スペクトル測定装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a total reflection absorption spectrum measuring device using a reflection microscope system.
【0002】[0002]
【従来の技術】全反射吸収スペクトル測定法(ATR)
は、赤外光を通す高屈折率物質で作られたATRプリズ
ムを試料表面に密着させ、ATRプリズムに対し試料と
の境界面で全反射を起す角(臨界角)以上の入射角で光
を入射させ、全反射された光の試料による吸収を検出す
ることにより、試料の吸収特性を測定する方法で、従来
から、赤外光について測定を行う場合、反射光学系によ
って構成された赤外反射顕微鏡システムを利用した装置
が用いられている。2. Description of the Related Art Total reflection absorption spectrum measurement method (ATR)
Is an ATR prism made of a high-refractive-index material that allows infrared light to come into close contact with the surface of the sample. A method of measuring the absorption characteristics of a sample by detecting the absorption of light that is incident and totally reflected by the sample. A device using a microscope system is used.
【0003】[0003]
【発明が解決しようとする課題】しかるに、従来の全反
射吸収スペクトル測定装置においては、ATRプリズム
が密着する試料の微小部分のみが測定対象となるため、
高感度測定ができなかったという問題があった。これに
対し金属薄膜を感度よく測定する方法として高感度反射
法(RAS)があるが、RAS法では入射角を大きくと
ることから微小部分の測定には適用しにくく、また、グ
リッド偏光子を用いることにより光量の減衰が大きく赤
外反射顕微鏡を利用したような微小部分の測定には適当
ではなかった。本発明は、試料の微小部分の測定であっ
ても高感度反射法(RAS)に匹敵するような高感度測
定ができる顕微全反射吸収スペクトル測定装置を得るこ
とを目的としている。However, in the conventional total internal reflection absorption spectrum measuring apparatus, only a minute portion of the sample with which the ATR prism is in close contact is a measurement target.
There was a problem that high-sensitivity measurement could not be performed. On the other hand, there is a high-sensitivity reflection method (RAS) as a method for measuring a metal thin film with high sensitivity, but the RAS method is difficult to apply to the measurement of a minute portion due to a large incident angle, and a grid polarizer is used As a result, the amount of light was greatly attenuated, and it was not suitable for the measurement of a minute portion using an infrared reflection microscope. It is an object of the present invention to obtain a microscopic total reflection absorption spectrum measuring device capable of performing high-sensitivity measurement comparable to the high-sensitivity reflection method (RAS) even when measuring a minute portion of a sample.
【0004】[0004]
【課題を解決するための手段】上記目的を達成するため
に、本発明の顕微全反射吸収スペクトル測定装置におい
ては、凹面主鏡と凸面副鏡よりなる反射対物光学系を有
し、同光学系の集光点を中心とする金属製の半球状AT
Rプリズムが圧接される試料の裏面に金属板を密着させ
て配置したものである。In order to achieve the above object, a microscopic total reflection absorption spectrum measuring apparatus of the present invention has a reflective objective optical system composed of a concave primary mirror and a convex secondary mirror. Metal hemispherical AT centered on the focal point of
A metal plate is placed in close contact with the back surface of the sample to which the R prism is pressed.
【0005】[0005]
【作用】上記のように構成された全反射吸収スペクトル
測定装置においては、測定時にはATRプリズム−試料
−金属板の配置とし、金属上の試料に金属製のATRプ
リズムを適宜の強さで密着させる。その結果、試料層を
透過し金属板(導体)に入射した光はその入射角に応じ
た振幅の定常波となり、試料との相互作用が大きくなっ
て試料による光吸収が増幅され、これが感度の増加に寄
与する。In the total reflection absorption spectrum measuring apparatus configured as described above, the ATR prism, the sample and the metal plate are arranged at the time of measurement, and the metal ATR prism is brought into close contact with the sample on the metal with appropriate strength. . As a result, the light transmitted through the sample layer and incident on the metal plate (conductor) becomes a standing wave with an amplitude according to the incident angle, the interaction with the sample becomes large, and the light absorption by the sample is amplified, which increases the sensitivity. Contribute to.
【0006】[0006]
【実施例】以下、本発明の顕微全反射吸収スペクトル測
定装置について図面を参照して説明するに、図1におい
て、反射対物光学系は中央に孔のあいた凹面主鏡2と、
この凹面主鏡1と同軸の先端半球状の対物レンズ5の周
辺部の凸面副鏡3とからなるカセグレン式反射対物鏡1
で、カセグレン鏡1の先端にはその集光点を中心とする
金属製、例えば、ゲルマニウム(Ge)製の半球状AT
Rプリズム4が取り付けられている。さらに、カセグレ
ン鏡1の光軸上に、その中心を一致させて周辺光を透過
させる輪状開口のATR測定用アパーチャ6が配置され
ている。従って、分光器(図示せず)から出射した測定
光(単色光)のうちアパーチャ6により図中右側の周辺
光が凸面副鏡3に照射される。なお、対物レンズ5その
ものは、近軸光を透過させる円形開口を有する目視用ア
パーチャ(図示せず)をカセグレン鏡1の光軸上に配置
し、試料を対物光学系で目視するときに用いられる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A microscopic total reflection absorption spectrum measuring apparatus of the present invention will be described below with reference to the drawings. In FIG. 1, a reflective objective optical system is a concave primary mirror 2 having a hole in the center,
Cassegrain reflection objective mirror 1 including the concave primary mirror 1 and the convex secondary mirror 3 in the peripheral portion of the objective hemispherical objective lens 5 that is coaxial.
At the tip of the Cassegrain mirror 1, a hemispherical AT made of a metal, for example, germanium (Ge), whose center is the condensing point is used.
The R prism 4 is attached. Further, on the optical axis of the Cassegrain mirror 1, an ATR measurement aperture 6 having a ring-shaped aperture is arranged so that the centers thereof coincide with each other and the peripheral light is transmitted. Therefore, of the measurement light (monochromatic light) emitted from the spectroscope (not shown), the peripheral secondary light on the right side in the figure is irradiated onto the convex secondary mirror 3 by the aperture 6. The objective lens 5 itself is used when a visual aperture (not shown) having a circular opening for transmitting paraxial light is arranged on the optical axis of the Cassegrain mirror 1 to visually observe a sample with an objective optical system. .
【0007】試料7はATRプリズム4下面に圧接さ
せ、さらに、試料7の底面に金属板8(導体)を配置し
試料裏面に密着させる。即ち、測定時、試料はGeAT
Rプリズム4−試料7−金属板(導体)8の配置とな
る。The sample 7 is brought into pressure contact with the lower surface of the ATR prism 4, and a metal plate 8 (conductor) is arranged on the bottom surface of the sample 7 and brought into close contact with the rear surface of the sample. That is, at the time of measurement, the sample is GeAT
The R prism 4, the sample 7, and the metal plate (conductor) 8 are arranged.
【0008】ATR測定時には、ATR測定用アパーチ
ャ6を透過した周辺光が凸面副鏡3に照射され、凹面主
鏡2を介してATR測定に必要な入射角をもつ光だけが
ATRプリズム4に入射し、ATRプリズム4と試料7
の接触面で全反射する。この全反射光は再びカセグレン
鏡1(凸面副鏡3、凹面主鏡2)に入射し、同カセグレ
ン鏡1を介してアパーチャ6により図中左側の周辺光と
してMCT検出器(図示せず)で検出される。このと
き、ATRプリズム4に入射した光が試料層を通って金
属板8に到達し、その入射角に応じた振幅の定常波とな
り、これによって試料との相互作用も大きくなり、試料
による光吸収を増大させるので、測定感度が著しく増加
する。At the time of ATR measurement, the ambient light transmitted through the ATR measurement aperture 6 is applied to the convex secondary mirror 3, and only the light having the incident angle required for the ATR measurement is incident on the ATR prism 4 via the concave primary mirror 2. ATR prism 4 and sample 7
Totally reflects on the contact surface of. This totally reflected light again enters the Cassegrain mirror 1 (convex sub-mirror 3 and concave main mirror 2) and passes through the Cassegrain mirror 1 by the aperture 6 as ambient light on the left side in the figure by an MCT detector (not shown). To be detected. At this time, the light incident on the ATR prism 4 reaches the metal plate 8 through the sample layer and becomes a standing wave having an amplitude corresponding to the incident angle, which increases the interaction with the sample and absorbs light by the sample. As a result, the measurement sensitivity is significantly increased.
【0009】例えば、同一試料について、本発明のAT
Rプリズム−試料−金属板の配置と従来のATRプリズ
ム−試料の配置で比較測定した結果の吸収スペクトルを
図2に示す。明らかに本発明のATRプリズム−試料−
金属板の配置のほうが数倍〜数十倍の感度増加が得られ
ている。また、試料がLB膜のようにごく薄い数分子層
からなる薄膜の場合には、図3に示すように、入射角8
0°、偏光子併用、焦電検出器、8cm-1、100回、
2.8mm/sec、ゲイン自動の測定条件の下で1c
mφの試料面積を高感度反射法(RAS)で測定した結
果と、MCT検出器、8cm-1、100回、9mm/s
ec、ゲイン自動の測定条件の下で100μmφのごく
微小部分の試料面積を本発明の顕微全反射吸収スペクト
ル測定装置で測定した結果の吸収スペクトルはほぼ同程
度であった。For example, for the same sample, the AT of the present invention
FIG. 2 shows an absorption spectrum as a result of comparative measurement with the arrangement of the R prism-sample-metal plate and the arrangement of the conventional ATR prism-sample. Apparently the ATR prism of the present invention-Sample-
With the arrangement of the metal plate, a sensitivity increase of several times to several tens of times is obtained. Further, when the sample is a thin film composed of a very thin number of molecular layers such as an LB film, as shown in FIG.
0 °, combined use of polarizer, pyroelectric detector, 8 cm -1 , 100 times,
2.8 mm / sec, 1c under automatic gain measurement conditions
The result of measuring the sample area of mφ by the high sensitivity reflection method (RAS) and the MCT detector, 8 cm −1 , 100 times, 9 mm / s
Under the measurement conditions of ec and automatic gain, a sample area of a very small portion of 100 μmφ was measured by the microscopic total reflection absorption spectrum measuring apparatus of the present invention, and the absorption spectra were almost the same.
【0010】なお、試料ならびに金属板は赤外反射顕微
鏡の試料ステージ(図示せず)に載置されるものであ
り、これを容易に移動、設定することができ、また、試
料ステージの動きと測定を連動させることにより、赤外
吸収スペクトルによるマッピング測定も可能である。The sample and the metal plate are placed on a sample stage (not shown) of an infrared reflection microscope, which can be easily moved and set. Mapping measurement by infrared absorption spectrum is also possible by linking the measurement.
【0011】[0011]
【発明の効果】本発明は、以上説明したように構成され
ているので、ごく微小な試料部分の測定であっても高感
度反射法(RAS)と同程度の赤外吸収スペクトルを得
ることができる。Since the present invention is configured as described above, it is possible to obtain an infrared absorption spectrum similar to that of the high sensitivity reflection method (RAS) even in the measurement of a very small sample portion. it can.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明一実施例装置の要部縦断面図である。FIG. 1 is a longitudinal sectional view of an essential part of an apparatus according to an embodiment of the present invention.
【図2】本発明一実施例装置と従来装置との測定比較例
を示す線図(データ)である。FIG. 2 is a diagram (data) showing an example of measurement comparison between the device of one embodiment of the present invention and the conventional device.
【図3】本発明一実施例装置の測定結果と異種の高感度
反射法による測定結果との比較例を示す線図(データ)
である。FIG. 3 is a diagram (data) showing a comparative example of the measurement result of the device of one embodiment of the present invention and the measurement result by the different high-sensitivity reflection method.
Is.
1…カセグレン反射対物鏡 2…凹面主鏡 3…凸面副鏡 4…ATRプリズ
ム 5…対物レンズ 6…アパーチャ 7…試料 8…金属板DESCRIPTION OF SYMBOLS 1 ... Cassegrain reflection objective mirror 2 ... Concave primary mirror 3 ... Convex secondary mirror 4 ... ATR prism 5 ... Objective lens 6 ... Aperture 7 ... Sample 8 ... Metal plate
Claims (1)
学系を有し、同光学系の集光点を中心とする金属製の半
球状ATRプリズムを備えた顕微全反射吸収スペクトル
測定装置において、 前記ATRプリズムが圧接される試料の裏面に金属板を
密着させて配置したことを特徴とする顕微全反射吸収ス
ペクトル測定装置。1. A microscopic total reflection absorption spectrum measuring apparatus having a reflective objective optical system composed of a concave primary mirror and a convex secondary mirror, and equipped with a metal hemispherical ATR prism centered on a focal point of the optical system. 2. A micro total reflection absorption spectrum measuring apparatus, characterized in that a metal plate is placed in close contact with the back surface of the sample to which the ATR prism is pressed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4102895A JPH08233728A (en) | 1995-02-28 | 1995-02-28 | Microscopic total reflection absorption spectrum measuring apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4102895A JPH08233728A (en) | 1995-02-28 | 1995-02-28 | Microscopic total reflection absorption spectrum measuring apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08233728A true JPH08233728A (en) | 1996-09-13 |
Family
ID=12596950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4102895A Pending JPH08233728A (en) | 1995-02-28 | 1995-02-28 | Microscopic total reflection absorption spectrum measuring apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08233728A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6087947A (en) * | 1996-07-11 | 2000-07-11 | Robert N. Hamburger | Allergen detector system and method |
WO2003021239A1 (en) * | 2001-08-28 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Apparatus for measuring information on particular component |
US7255835B2 (en) * | 2001-09-04 | 2007-08-14 | North Carolina State University | Single pass attenuated total reflection fourier transform infrared microscopy apparatus and method for identifying protein secondary structure, surface charge and binding affinity |
CN102735634A (en) * | 2012-06-08 | 2012-10-17 | 中国科学院半导体研究所 | Dielectric grating structure single-wavelength reflection light absorption sensor chip and preparation method thereof |
-
1995
- 1995-02-28 JP JP4102895A patent/JPH08233728A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6087947A (en) * | 1996-07-11 | 2000-07-11 | Robert N. Hamburger | Allergen detector system and method |
WO2003021239A1 (en) * | 2001-08-28 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Apparatus for measuring information on particular component |
JPWO2003021239A1 (en) * | 2001-08-28 | 2004-12-16 | 松下電器産業株式会社 | Information measuring device for specific components |
US7255835B2 (en) * | 2001-09-04 | 2007-08-14 | North Carolina State University | Single pass attenuated total reflection fourier transform infrared microscopy apparatus and method for identifying protein secondary structure, surface charge and binding affinity |
CN102735634A (en) * | 2012-06-08 | 2012-10-17 | 中国科学院半导体研究所 | Dielectric grating structure single-wavelength reflection light absorption sensor chip and preparation method thereof |
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