JPH0821564B2 - Cleaning equipment - Google Patents
Cleaning equipmentInfo
- Publication number
- JPH0821564B2 JPH0821564B2 JP63174030A JP17403088A JPH0821564B2 JP H0821564 B2 JPH0821564 B2 JP H0821564B2 JP 63174030 A JP63174030 A JP 63174030A JP 17403088 A JP17403088 A JP 17403088A JP H0821564 B2 JPH0821564 B2 JP H0821564B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- pressure
- cleaning liquid
- pure water
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置等の被洗浄物を洗浄液を用い
て洗浄する洗浄装置に関する。Description: TECHNICAL FIELD The present invention relates to a cleaning device for cleaning an object to be cleaned such as a semiconductor device with a cleaning liquid.
従来より被洗浄物を洗浄する方法は世の中に数多く存
在する。例えば、薬品を用いる方法、洗浄ガスを用いる
方法あるいは光を用いる方法などが挙げられるが、この
他に純水でリンスする洗浄方法も広く一般に使用されて
いる。この洗浄方法は純水を被洗浄物に接触させて、被
洗浄物表面を清浄にする方法であり、半導体産業でも半
導体基板やウエハ等を洗浄する際によく用いられてい
る。Conventionally, there are many methods in the world for cleaning an object to be cleaned. For example, a method using a chemical, a method using a cleaning gas, a method using light, and the like can be mentioned. In addition to this, a cleaning method of rinsing with pure water is also widely used. This cleaning method is a method of cleaning the surface of an object to be cleaned by bringing pure water into contact with the object to be cleaned, and is often used in the semiconductor industry for cleaning semiconductor substrates, wafers, and the like.
第４図はそのような従来の洗浄方法を説明する図であ
る。同図に示すように、洗浄槽１には純水を供給するた
めの供給ライン２が接続されており、半導体基板やウエ
ハ等の被洗浄物３を薬品で洗浄処理した後に洗浄槽１内
に配置し、純水４を洗浄槽１内に供給ライン２より供給
することにより、上記薬品を純水４で洗い流すようにし
て被洗浄物３のリンス洗浄を行なう。この場合、純水４
の供給は、洗浄槽１よりオーバフローされるように連続
的に供給されることが多く、また洗浄効果を高めるため
に、純水４を温水にして用いたり、超音波発振器等によ
り超音波振動を加えたり、界面活性剤を混入したり、あ
るいはこれらを併用することもある。FIG. 4 is a diagram for explaining such a conventional cleaning method. As shown in the figure, a supply line 2 for supplying pure water to the cleaning tank 1 is connected to the cleaning tank 1 after cleaning an object to be cleaned 3 such as a semiconductor substrate or a wafer with a chemical. By arranging and supplying the pure water 4 into the cleaning tank 1 through the supply line 2, the chemicals are rinsed with the pure water 4 to rinse the object 3 to be cleaned. In this case, pure water 4
In many cases, the cleaning water is continuously supplied so that it overflows from the cleaning tank 1, and in order to enhance the cleaning effect, pure water 4 is used as warm water or ultrasonic vibration is generated by an ultrasonic oscillator or the like. They may be added, a surfactant may be mixed, or these may be used in combination.
ところで、被洗浄物３が半導体基板やウエハ等のよう
な場合には、その表面に形成される凹凸部のサイズ、例
えばパターン形成によって生じる細溝のサイズが、微細
なものでは溝幅寸法が１μｍ以下で、深さ寸法が数μｍ
程度になっている。この細溝内部を十分に洗浄すること
は非常に重要であるものの、従来の洗浄方法では純水４
が細溝内部まで十分に行き渡らず細溝内の汚れを除去で
きないという問題があった。更に、近年半導体基板にし
ばしば形成されるトレンチ溝等の微細溝は、上記細溝よ
り溝幅寸法が小さく、しかも深さ寸法が深くなってお
り、そのような微細溝内部を十分に洗浄することはより
一層困難であるという問題があった。By the way, when the object to be cleaned 3 is a semiconductor substrate, a wafer, or the like, the size of the concavo-convex portion formed on the surface thereof, for example, the size of the fine groove formed by the pattern formation is very small, and the groove width dimension is 1 μm. Below, the depth dimension is a few μm
It has become a degree. Although it is very important to thoroughly clean the inside of the narrow groove, the conventional cleaning method uses pure water 4
However, there is a problem in that the stains in the narrow groove cannot be removed because they do not reach the inside of the narrow groove sufficiently. Further, fine grooves such as trench grooves often formed on a semiconductor substrate in recent years have a smaller groove width dimension and a deeper depth dimension than the above-mentioned fine grooves, and it is necessary to sufficiently clean the inside of such fine grooves. Was even more difficult.
この発明は、上記従来技術の問題を解消し、半導体基
板またはウエハ等の被洗浄物の微細な溝内部まで十分に
洗浄できる洗浄装置を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems of the prior art and to provide a cleaning apparatus capable of sufficiently cleaning the inside of a fine groove of an object to be cleaned such as a semiconductor substrate or a wafer.
上記目的を達成するため、請求項１記載の発明による
洗浄装置は、加圧容器と、前記加圧容器内に設けられる
洗浄液収容器と、前記洗浄液収容器内に洗浄液を供給す
る洗浄液供給手段と、前記加圧容器内を加圧する加圧手
段と、前記洗浄液容器内に供給された洗浄液を加熱する
加熱手段と、前記加圧容器内を減圧する減圧手段と、前
記加圧手段により前記洗浄液を大気圧より高い所定圧力
まで加圧し、前記加熱手段により前記所定圧力における
沸点より低く、かつ大気圧における沸点より高い温度の
状態になるように前記洗浄液を加熱し、その後前記高い
温度の状態を保ったまま前記減圧手段により前記洗浄液
を大気圧まで一気に減圧するように、前記加圧手段、前
記加熱手段および前記減圧手段の駆動を制御して、前記
洗浄液を突沸させる制御手段とを備えている。In order to achieve the above object, the cleaning apparatus according to the invention of claim 1 comprises: a pressure container, a cleaning liquid container provided in the pressure container, and a cleaning liquid supply means for supplying a cleaning liquid into the cleaning liquid container. A pressurizing means for pressurizing the inside of the pressurizing container, a heating means for heating the cleaning liquid supplied into the cleaning liquid container, a depressurizing means for depressurizing the inside of the pressurizing container, and the cleaning liquid by the pressurizing means. The cleaning liquid is pressurized to a predetermined pressure higher than the atmospheric pressure, and the cleaning liquid is heated by the heating means so that the temperature is lower than the boiling point at the predetermined pressure and higher than the boiling point at the atmospheric pressure, and then the high temperature state is maintained. While keeping the depressurizing means at once, the driving of the pressurizing means, the heating means and the depressurizing means is controlled so as to suddenly depressurize the cleaning solution to atmospheric pressure. And a control means.
請求項１記載の発明による洗浄装置においては、洗浄
液を加圧・加熱した後、その温度を維持したままその温
度での洗浄液の沸点以上になる圧力まで減圧させること
により、洗浄液が突沸される。In the cleaning apparatus according to the first aspect of the present invention, after the cleaning liquid is pressurized and heated, the temperature of the cleaning liquid is reduced to a pressure equal to or higher than the boiling point of the cleaning liquid at that temperature, whereby the cleaning liquid is bumped.
請求項１記載の発明に関連する洗浄装置に用いられる
洗浄方法は、洗浄液の突沸現象、すなわち洗浄液が沸点
以上になって突発的に沸騰を起こす現象を利用してい
る。The cleaning method used in the cleaning device according to the first aspect of the present invention utilizes the phenomenon of sudden boiling of the cleaning liquid, that is, the phenomenon of sudden boiling when the cleaning liquid has a boiling point or higher.
例えば、半導体基板やウエハ等の被洗浄物を純水等の
洗浄液に浸漬した後、その純水に熱を加えて突沸させ
る。この突沸現象によりトレンチ溝等の微細な溝内部に
も純水が行き渡り、微細溝内部の洗浄が可能となる。For example, an object to be cleaned such as a semiconductor substrate or a wafer is immersed in a cleaning liquid such as pure water, and then the pure water is heated to cause bumping. Due to this bumping phenomenon, pure water reaches the inside of fine grooves such as trench grooves, and the inside of the fine grooves can be cleaned.
なお、洗浄液が純水だけに限定されるものでないこと
は言うまでもない。Needless to say, the cleaning liquid is not limited to pure water.
A.実験例 次に、上記洗浄方法を適用した実験例について説明す
る。A. Experimental Example Next, an experimental example to which the above cleaning method is applied will be described.
第１図はその実験例を説明する図である。同図に示す
ように、この実験例では、洗浄槽11の両側に超音波発振
器12,12を配置するとともに、底部に加熱器13を配置し
ている。また、洗浄液として純水14を用い、被洗浄物と
して、毛細管、すなわち数mm以下程度の口径を有するガ
ラス管15,16を用いた、ガラス管15は両端がともに開放
されており、ガラス管16は一端が開放されて他端が閉成
されている。更に、ガラス管15,16の管内には微粉な粉
末17を入れ、粉末17の除去状態が目視で判別できるよう
にトレーサー物質としてインク18を入れる。FIG. 1 is a diagram for explaining the experimental example. As shown in the figure, in this experimental example, the ultrasonic oscillators 12 and 12 are arranged on both sides of the cleaning tank 11, and the heater 13 is arranged at the bottom. Further, pure water 14 is used as the cleaning liquid, and capillaries, that is, glass tubes 15 and 16 having a diameter of about several mm or less are used as the object to be cleaned. Both ends of the glass tube 15 are open, and the glass tube 16 Has one end open and the other end closed. Further, fine powder 17 is put in the glass tubes 15 and 16, and ink 18 is put as a tracer substance so that the removal state of the powder 17 can be visually discerned.
この条件の下で、以下に示すような従来の洗浄方法
（ａ），（ｂ），（ｃ）と、この発明に関連する洗浄方
法（ｄ）を実施して、それらの洗浄結果を相互に比較し
た。Under these conditions, the following conventional cleaning methods (a), (b) and (c) and the cleaning method (d) related to the present invention are carried out to mutually compare the cleaning results. Compared.
浸漬洗浄（ａ）…常温状態の純水14にガラス管15,16を
浸漬する。Immersion cleaning (a): The glass tubes 15 and 16 are immersed in pure water 14 at room temperature.
加熱洗浄（ｂ）…常温状態の純水14にガラス管15,16を
浸漬し、さらに超音波発振器12,12を用いて超音波振動
を与える。Heat cleaning (b) ... Glass tubes 15 and 16 are immersed in pure water 14 at room temperature, and ultrasonic vibrations are applied using ultrasonic oscillators 12 and 12.
加温洗浄（ｃ）……純水14にガラス管15,16を浸漬し、
突沸しない程度に純水14を加熱器により加熱する。Washing by heating (c) ... Glass tubes 15 and 16 are immersed in pure water 14,
The pure water 14 is heated by a heater to the extent that bumping does not occur.
突沸洗浄（ｄ）……純水14にガラス管15,16を浸漬し、
突沸するように純水14を加熱する。Bumping cleaning (d) ........ Pip glass tubes 15 and 16 in pure water 14,
The pure water 14 is heated so that it may bump.
実験結果を表１に示す。 The experimental results are shown in Table 1.
表１に示されるように、浸漬洗浄（ａ）では、ガラス
管15,16に洗浄効果は認められなかった。加振洗浄
（ｂ）および加温洗浄（ｃ）ではガラス管15にそれぞれ
洗浄効果が認められたものの、ガラス管16にはそれぞれ
洗浄効果が認められなかった。また、突沸洗浄（ｄ）で
はガラス管15,16ともにそれぞれ洗浄効果が認められ
た。 As shown in Table 1, no cleaning effect was observed on the glass tubes 15 and 16 in the immersion cleaning (a). In the vibrating cleaning (b) and the warming cleaning (c), the glass tube 15 had the cleaning effect, but the glass tube 16 did not have the cleaning effect. Further, in the bump cleaning (d), the cleaning effect was recognized for both the glass tubes 15 and 16.
以上より、純水14を突沸させることにより、ガラス管
15,16の微細な管内の洗浄が可能なことが確認された。From the above, by boiling the pure water 14
It was confirmed that it was possible to clean the inside of 15, 16 minute tubes.
B.実施例 次に、この発明の一実施例を、第２図に示される洗浄
装置31を用いて説明する。この洗浄装置31は、液体の沸
点が周囲圧力によって変化するという原理を利用してい
る。B. Embodiment Next, one embodiment of the present invention will be described using the cleaning device 31 shown in FIG. This cleaning device 31 utilizes the principle that the boiling point of a liquid changes with ambient pressure.
同図に示すように、加圧容器32には開閉自在に蓋32a
が設けられるとともに、内部に洗浄液収容器を構成する
洗浄槽33が設けられる。洗浄槽33の両側方にはそれぞれ
加熱手段を構成する誘電加熱部34,34が配置され、この
誘電加熱部34,34から数十GHzのマイクロ波を発振して洗
浄槽33内に供給される純水35を加熱するように構成され
る。また、給水バルブ36を有する給水管37は加圧容器32
の底部を貫通して洗浄槽33の株に連結される。一方、洗
浄槽33の上部外周には水受部38が設けられ、その水受部
38の底部に連結された第１排水管39が加圧容器32の底部
を貫通して器外に導かれるとともに、洗浄槽33の底部に
連結された第２排水管40が加圧容器32の底部に貫通され
さらに第２排水バルブ42を介して第１排水管39の第１排
水バルブ41の下流側に連結される。そして、給水管37を
介して洗浄槽33内に純水35を供給するとともに、洗浄槽
33の上端よりオーバーフローする純水35を第１排水管39
を介して器外に排水する。As shown in the figure, the pressurizing container 32 has a lid 32a that can be freely opened and closed.
Is provided, and a cleaning tank 33 that constitutes a cleaning liquid container is provided inside. Dielectric heating units 34, 34 that constitute heating means are arranged on both sides of the cleaning tank 33, and microwaves of several tens GHz are oscillated from the dielectric heating units 34, 34 and supplied into the cleaning tank 33. It is configured to heat pure water 35. In addition, the water supply pipe 37 having the water supply valve 36 is a pressurized container 32.
Is connected to the stock in the washing tank 33 through the bottom of the. On the other hand, a water receiver 38 is provided on the outer periphery of the upper portion of the cleaning tank 33.
The first drainage pipe 39 connected to the bottom of 38 is guided through the bottom of the pressure vessel 32 to the outside of the vessel, and the second drainage pipe 40 connected to the bottom of the cleaning tank 33 is connected to the pressure vessel 32. It penetrates through the bottom and is further connected to the downstream side of the first drain valve 41 of the first drain pipe 39 via the second drain valve 42. Then, while supplying pure water 35 into the cleaning tank 33 through the water supply pipe 37,
Pure water 35 overflowing from the upper end of 33 is drained to the first drain pipe 39.
Drain out of the vessel via.
また、加圧容器32の蓋32aには、減圧用配管43が連結
されており、この減圧用配管43が減圧バルブ44を介して
大気に開放される。更に蓋32aに連結されるガス供給管4
5は、ガス供給バルブ46を介して図示しないガス供給ボ
ンベに接続される。A pressure reducing pipe 43 is connected to the lid 32a of the pressure vessel 32, and the pressure reducing pipe 43 is opened to the atmosphere via a pressure reducing valve 44. Further, the gas supply pipe 4 connected to the lid 32a
5 is connected to a gas supply cylinder (not shown) via a gas supply valve 46.
洗浄槽33内には水温検知手段47が設けられるととも
に、加圧容器32内には図示しない圧力検知手段が設けら
れており、水温検知手段47および上記圧力検知手段が水
温表示部48および圧力表示部49にそれぞれ接続されると
ともに、制御手段50にもそれぞれ接続される。さらに、
バルブ36,41,42,44,46および誘電加熱部34がそれぞれ制
御手段50に接続されており、オペレータによる洗浄開始
指令に応答して制御手段50が作動し、後述する洗浄制御
動作が行なわれる。A water temperature detecting means 47 is provided in the cleaning tank 33, and a pressure detecting means (not shown) is provided in the pressurizing container 32. The water temperature detecting means 47 and the pressure detecting means include a water temperature display section 48 and a pressure display. It is connected to the section 49 and the control means 50, respectively. further,
The valves 36, 41, 42, 44, 46 and the dielectric heating unit 34 are respectively connected to the control means 50, and the control means 50 operates in response to a cleaning start command from the operator to perform a cleaning control operation described later. .
この制御装置において、ウエハ等の被洗浄物51を洗浄
するには、まず蓋32aを開成して洗浄槽33内に被洗浄物5
1を入れた後、蓋32aを閉成して加圧容器32内を密閉す
る。その後操作パネル等を用いて洗浄開始指令を与え
る。これにより、初期状態、すなわちすべてのバルブ3
6,41,42,44,46が閉状態に設定される。つづいて、第３
図のフローチャートに示すように、まず給水バルブ36お
よび第１排水バルブ41が開成されて、純水35が洗浄槽33
内に供給されるとともに、洗浄槽33の上端よりオーバー
フローした純水35が第１排水管39より排水される（ステ
ップS1）。このようにして一定時間純水35を流し流路お
よび容器系統をブロー洗浄した後、給水バルブ36および
排水バルブが閉成される。つづいて、ステップS2に示す
ように、ガス供給バルブ46が開成され、ガスボンベ（図
示省略）より加圧容器32内にガスが供給されて加圧され
る。加圧容器32内が所定圧力まで加圧されると、ガス供
給バルブ46が閉成される。次に、ステップS3に示すよう
に、誘電加熱部34により数十GHzのマイクロ波を与えて
純水35を所定温度まで加熱する。この場合の所定温度
は、上記所定圧力による加圧状態での沸点より低く、か
つ１気圧での純水35の沸点（100℃）より高い温度に保
ち、突沸が生じないようにしておく。次に、ステップS4
で減圧バルブ44が開成され、加圧容器32内が大気圧（約
１気圧）まで減圧される。この減圧により純水35は急速
に沸点を越え、純水35の内部で突沸現象が発生する。こ
の突沸現象により、上記実験例でも説明したように、ト
レンチ溝等の微細な溝の内部にまで純水35が行き渡り、
充分な洗浄効果が得られる。この後、ステップS5に示す
ように、第１および第２排水バルブ41,42が開成されて
純水35が排水され、一連のシーケンスが完了して洗浄処
理が完了する。その後は被洗浄物51を乾燥させる。In this controller, in order to clean an object to be cleaned 51 such as a wafer, first the lid 32a is opened and the object to be cleaned 5 is placed in the cleaning tank 33.
After putting 1 in, the lid 32a is closed to seal the inside of the pressure vessel 32. After that, a cleaning start command is given using the operation panel or the like. This allows the initial state, i.e. all valves 3
6,41,42,44,46 are set to the closed state. Next, the third
As shown in the flowchart of the figure, first, the water supply valve 36 and the first drainage valve 41 are opened, and the pure water 35 is replaced with the cleaning tank 33.
The pure water 35 which is supplied into the cleaning tank 33 and overflows from the upper end of the cleaning tank 33 is drained from the first drain pipe 39 (step S1). In this way, the pure water 35 is flown for a certain period of time to blow and wash the flow path and the container system, and then the water supply valve 36 and the drain valve are closed. Subsequently, as shown in step S2, the gas supply valve 46 is opened, and gas is supplied from the gas cylinder (not shown) into the pressurizing container 32 to be pressurized. When the inside of the pressure vessel 32 is pressurized to a predetermined pressure, the gas supply valve 46 is closed. Next, as shown in step S3, the dielectric heating unit 34 applies microwaves of several tens of GHz to heat the pure water 35 to a predetermined temperature. In this case, the predetermined temperature is kept lower than the boiling point in the pressurized state by the predetermined pressure and higher than the boiling point (100 ° C.) of the pure water 35 at 1 atm to prevent bumping. Then step S4
Then, the decompression valve 44 is opened, and the pressure in the pressure vessel 32 is reduced to the atmospheric pressure (about 1 atm). Due to this depressurization, the pure water 35 rapidly exceeds the boiling point, and a bumping phenomenon occurs inside the pure water 35. Due to this bumping phenomenon, as described in the above experimental example, the pure water 35 reaches the inside of the fine groove such as the trench groove,
A sufficient cleaning effect can be obtained. Thereafter, as shown in step S5, the first and second drain valves 41 and 42 are opened to drain the pure water 35, and a series of sequences are completed to complete the cleaning process. After that, the article to be cleaned 51 is dried.
なお、被洗浄物51の汚れ状態がひどい場合には、上記
シーケンスを繰り返せばよい。また、純水バルブ36およ
び第１排水バルブ41を開状態で洗浄すれば、流水ブロー
しながらの洗浄も可能である。If the object to be cleaned 51 is extremely dirty, the above sequence may be repeated. Further, if the pure water valve 36 and the first drain valve 41 are washed in the open state, it is possible to perform washing while blowing running water.
この洗浄装置によれば、加圧・加熱状態にある純水35
を急激に大気圧まで減圧させて突沸を起こさせるように
構成しているため微細溝の洗浄が可能であり、しかも減
圧時期を適当に変化させることにより突沸時期を調整し
て突沸現象を制御することができる。また、加熱手段と
してマイクロ波使用による誘電加熱部34を用いているた
め、誘電加熱部34を洗浄槽33から離隔配置でき、装置設
計の自由度にも優れている。According to this cleaning device, pure water in a pressurized / heated state 35
Since it is configured to rapidly reduce the pressure to atmospheric pressure to cause bumping, fine grooves can be cleaned, and the bumping timing is adjusted by appropriately changing the pressure reduction timing to control the bumping phenomenon. be able to. Further, since the dielectric heating section 34 using microwaves is used as the heating means, the dielectric heating section 34 can be arranged separately from the cleaning tank 33, and the degree of freedom in device design is excellent.
なお、上記第２の実施例においては、加熱手段として
誘電加熱部34を用いているが、加熱手段は誘電加熱部34
だけに限られることなく、例えば加熱ヒータ等を用いて
もよい。また、加圧容器32内に供給されるガスの種類は
特に限定されることはなく、使用される洗浄液への溶解
度，反応性などを考慮して選択すればよい。さらに上記
装置に加えて超音波発振器等を併用するようにしてもよ
い。In the second embodiment, the dielectric heating section 34 is used as the heating means, but the heating means is the dielectric heating section 34.
The heater is not limited to this, and a heater or the like may be used. Further, the type of gas supplied into the pressurized container 32 is not particularly limited, and may be selected in consideration of solubility in the cleaning liquid used, reactivity, and the like. Further, an ultrasonic oscillator or the like may be used in combination with the above device.
以上のように、請求項１記載の発明による洗浄装置に
よれば、加圧・加熱状態にある洗浄液を減圧させて突沸
させるように構成しているため、突沸現象を利用した被
洗浄物の洗浄を行なえるという効果が得られる。As described above, according to the cleaning apparatus of the first aspect of the present invention, the cleaning liquid in the pressurized / heated state is depressurized to cause bumping, so that cleaning of the object to be cleaned utilizing the bumping phenomenon is performed. The effect of being able to do is obtained.
第１図はこの発明の洗浄方法を適用した実験例を説明す
る図、第２図はこの発明の一実施例である洗浄装置を示
す断面図、第３図はその装置の動作を説明するフローチ
ャート、第４図は従来の洗浄装置を示す断面図である。 図において、11,33は洗浄槽、14,35は純水、15,16はガ
ラス管、31は洗浄装置、32は加圧容器、34は誘電加熱
部、50は制御手段、51は被洗浄物である。 なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a view for explaining an experimental example to which the cleaning method of the present invention is applied, FIG. 2 is a sectional view showing a cleaning apparatus which is an embodiment of the present invention, and FIG. 3 is a flow chart for explaining the operation of the apparatus. FIG. 4 is a sectional view showing a conventional cleaning device. In the figure, 11 and 33 are cleaning tanks, 14 and 35 are pure water, 15 and 16 are glass tubes, 31 is a cleaning device, 32 is a pressure vessel, 34 is a dielectric heating unit, 50 is control means, and 51 is the object to be cleaned. It is a thing. In the drawings, the same reference numerals indicate the same or corresponding parts.
フロントページの続き (72)発明者 大森 雅司 兵庫県伊丹市瑞原４丁目１番地 三菱電機 株式会社北伊丹製作所内 (56)参考文献 特開 昭62−294475（ＪＰ，Ａ) 特開 昭50−68067（ＪＰ，Ａ) 実開 昭62−192638（ＪＰ，Ｕ)Front Page Continuation (72) Inventor Masashi Omori 4-1-1 Mizuhara, Itami City, Hyogo Prefecture Mitsubishi Electric Corporation Kita Itami Works (56) References JP 62-294475 (JP, A) JP 50-68067 (JP, A) Actually opened 62-192638 (JP, U)
Claims (1)
と、 前記加圧容器内を加圧する加圧手段と、 前記洗浄液収容器内に供給された洗浄液を加熱する加熱
手段と、 前記加圧容器内を減圧する減圧手段と、 前記加圧手段により前記洗浄液を大気圧より高い所定圧
力まで加圧し、前記加熱手段により前記所定圧力におけ
る沸点より低く、かつ大気圧における沸点より高い温度
の状態になるように前記洗浄液を加熱し、その後前記高
い温度の状態を保ったまま前記減圧手段により前記洗浄
液を大気圧まで一気に減圧するように、前記加圧手段、
前記加熱手段および前記減圧手段の駆動を制御して、前
記洗浄液を突沸させる制御手段とを備えた洗浄装置。1. A pressure container, a cleaning liquid container provided in the pressure container, a cleaning liquid supply unit for supplying a cleaning liquid into the cleaning liquid container, and a pressure unit for pressurizing the inside of the pressure container. Heating means for heating the cleaning liquid supplied into the cleaning liquid container, decompressing means for decompressing the inside of the pressure vessel, and pressurizing the cleaning liquid to a predetermined pressure higher than atmospheric pressure by the pressurizing means, and heating the same. The cleaning liquid is heated to a temperature lower than the boiling point at the predetermined pressure and higher than the boiling point at the atmospheric pressure by means, and then the cleaning liquid is heated to the atmospheric pressure by the pressure reducing means while maintaining the high temperature state. The pressure means, so as to reduce the pressure all at once,
A cleaning device comprising: a control unit that controls the driving of the heating unit and the decompression unit to cause the cleaning liquid to bump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174030A JPH0821564B2 (en) | 1988-07-12 | 1988-07-12 | Cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63174030A JPH0821564B2 (en) | 1988-07-12 | 1988-07-12 | Cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0223620A JPH0223620A (en) | 1990-01-25 |
| JPH0821564B2 true JPH0821564B2 (en) | 1996-03-04 |
Family
ID=15971405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63174030A Expired - Lifetime JPH0821564B2 (en) | 1988-07-12 | 1988-07-12 | Cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0821564B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03293072A (en) * | 1990-04-11 | 1991-12-24 | Chiyoda Manufacturing Co Ltd | Operation method for washing equipment with organic solvent utilized therefor |
| JP2004157275A (en) * | 2002-11-06 | 2004-06-03 | Hitachi Chem Co Ltd | Method for manufacturing optical waveguide device |
| JP5018847B2 (en) * | 2009-08-31 | 2012-09-05 | 日立電線株式会社 | Surface treatment method and surface treatment apparatus for metal member |
| JP5483260B2 (en) * | 2010-05-07 | 2014-05-07 | 三浦工業株式会社 | Cleaning device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5068067A (en) * | 1973-10-17 | 1975-06-07 | ||
| JPS62192638U (en) * | 1986-05-28 | 1987-12-08 | ||
| JPH0763687B2 (en) * | 1986-06-11 | 1995-07-12 | 株式会社オ−・エイチ・エル | Article cleaning method and device |
-
1988
- 1988-07-12 JP JP63174030A patent/JPH0821564B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0223620A (en) | 1990-01-25 |
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