JPH08213764A - Electronic part and manufacture thereof - Google Patents

Abstract

PURPOSE: To provide a small electronic part including a semiconductor element, a surface acoustic wave device or a crystal oscillator without a fluctuation in electrical characteristics caused by a change in inductance of an element used at high frequency. CONSTITUTION: In a bump forming board 5, a projected electrode 4 is provided with an electrode film 3 in between on an inside face of a through hole 2 in an insulating board 1. The projected electrode 4 of the bump forming board 5 and a drawing out electrode 7 of an element 8 are connected in a joint alloy state. In addition, a middle case 9 and a cover 10 are mounted on the bump forming board 5 to seal the whole body.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component incorporating a semiconductor element, a surface acoustic wave element, a crystal oscillator or the like used in various electronic devices and a method for manufacturing the same.

[0002]

2. Description of the Related Art A conventional electronic component will be described below.

In a package incorporating a semiconductor element, a surface acoustic wave element, etc., the lead wires connected to these elements are taken out of the package while preventing electromagnetic influences on these elements and keeping airtight from the outside air. It was composed. As shown in FIGS. 7 and 8, the connection terminal 5 provided on the end surface portion of the first insulating plate 51 made of alumina or the like.
2, the first insulating plate 51 and the second insulating plate 53 made of alumina or the like
Between the first conductive pattern 54 provided between the second insulating plate 53 and the first conductive pattern 54 and the conductive layer 5 provided in the recess formed in the vertical portion of the second insulating plate 53.
5 and the second conductive pattern 56 provided on the upper surface of the second insulating plate 53, the conductor is printed on the green sheet-shaped alumina plate, and then the two green sheet-shaped alumina plates are formed. It is made by laminating and firing. An element 57 such as a semiconductor element or a surface acoustic wave element is adhered and fixed on this case, and the electrode portion of the element 57 and the second conductive pattern 56 are connected by a lead wire 58 made of Au or Al, and then a metal lid 59. Is soldered or seam welded to the metal layer 60 provided on the second insulating plate 53 and sealed.

In such a structure, since the element 57 and the external lead are electrically connected by the lead wire 58 using the wire bonding technique, the size of the electronic component is smaller than the size of the element 57. It became large and it was difficult to miniaturize it.

Further, if the step difference between the wire bond connecting surface of the element 57 and the wire bond connecting surface of the case becomes large, it becomes difficult to make a good wire bond connection. Therefore, a part of the second insulating plate 53 is cut out. Although the step is eliminated by arranging the element 57 in this portion, the production of such a case requires a complicated process, and the case has a high cost.

Further, when the element 57 is a surface acoustic wave element, when the operating frequency is in the high frequency band around 1 GHz,
The frequency characteristic of the element 57 is influenced by the way of arranging the lead wire 58 and the way of arranging the ground electrode lead wire and the signal electrode lead wire. This is because those lead wires act as inductors in the high frequency band, and the inductance varies depending on how the lead wires are stretched.

[0007]

As described above, the conventional configuration has a problem that it is difficult to miniaturize, and when an element used in a high frequency band is incorporated, frequency variation of electrical characteristics due to inductance variation is caused. However, the manufacturing process is complicated and the cost is high.

The present invention solves the above-mentioned problems of the prior art, can be miniaturized, and when an element used in a high frequency band is incorporated, no frequency fluctuation of electrical characteristics due to inductance fluctuation occurs, and the manufacturing process is simple. It is an object of the present invention to provide an electronic component that does not increase in cost and a manufacturing method thereof.

[0009]

To achieve this object, an electronic component according to the present invention comprises a bump forming substrate having a bump electrode provided via an electrode film formed in a through hole of an insulating substrate, and an electrode film. An element having a surface electrode that is connected to the external circuit and connected to an external circuit, a lead electrode that is connected to the bump electrode, a metal, ceramic, or glass middle case that is joined to the bump forming substrate and a lid are provided. The structure is such that the inner case and the lid are attached to the bump forming substrate and then sealed and joined.

Further, in the manufacturing method, a through hole is provided at a position corresponding to the extraction electrode of the element of the insulating substrate, an electrode film is formed on one surface of the insulating substrate including the through hole, and then the insulating substrate is formed. The surface with the electrode film other than the through holes is covered with an insulator, and only the through holes are plated to fill the through holes, and a bump forming substrate is provided that has a protruding electrode protruding more than the insulating substrate. After aligning the extraction electrode with the bump electrode on the bump forming substrate so as to be aligned with each other, the alloy connection is performed by applying pressure and heat, and then the middle case and the lid are sealed.

[0011]

In this structure and method, since the element and the lead to the outside are connected without using the lead wire made of Au or Al, the size can be reduced and the inductance is not generated by the lead wire. The frequency does not fluctuate and the structure of the substrate becomes simple.

[0012]

【Example】

(Embodiment 1) An embodiment of the present invention will be described below with reference to the drawings.

As shown in FIG. 1, a bump forming substrate 5 having a protruding electrode 4 provided through an electrode film 3 of a through hole 2 formed in an insulating substrate 1 and an electrode film 3 are joined to an external circuit. This is a configuration including a surface electrode 6 to be connected, an element 8 having a lead-out electrode 7 to be alloy-bonded to the bump electrode 4, an inner case 9 to be bonded to the bump forming substrate 5, and a lid 10. In this embodiment, the element 8 is a surface acoustic wave element having an interdigital transducer electrode 8a for exciting and receiving surface acoustic waves.

A method of manufacturing the electronic component having the above structure will be described below. First, a method of manufacturing the bump forming substrate 5 will be described with reference to FIG.

As shown in FIG. 2 (a), a through hole 2 is formed by sandblasting at a predetermined position of an insulating substrate 1 made of soda glass, and then, as shown in FIG. Electrode film 3 on one side of substrate 1 and on the opposite side
After setting the mask jig (1) 11 and the mask jig (2) 12 in the region where the holes are not formed, the electrode film 3 is formed in the through hole 2
Is formed in a region including. The electrode film 3 can be formed by vacuum vapor deposition or sputtering. In this embodiment, sputtering is used to form a Cr film (thickness: 30 nm) in the lower layer and a Cu film (thickness: 2 μm) in the upper layer. Then, Figure 2
As shown in (c), a plating prevention cover 13 is attached so as to cover the electrode film 3 formed on one side surface of the insulating substrate 1 and is immersed in an Au plating solution to form an Au plating film. Since the electrode film 3 of the insulating substrate 1 is exposed to the plating solution only in the portion of the through hole 2, it is plated only in the through hole 2 and the through hole 2 is filled with the Au plating film as the plating time elapses. Further, by continuing the plating, the protruding electrode 4 made of Au in a protruding state is formed as shown in FIG. After this, the cover 13 for preventing plating
By removing, the bump forming substrate 5 is obtained as shown in FIG.

As shown in FIG. 3, the extraction electrode 7 of the element 8 is aligned with the projection electrode 4 of the bump forming substrate 5, and then the element 8 is pressed and heated to thereby extract the extraction electrode 7 and the projection electrode 4. After the inner case 9 and the lid 10 are set and sealed and connected, the surface electrode 6 is formed by screen printing as an electrode for soldering to the printed circuit board of the external circuit to form an electronic component. To complete.

In this embodiment, since the surface acoustic wave element was used as the element 8 and the material of the extraction electrode 7 was Al, it was connected to Au of the protruding electrode 4 by Au-Al alloy bonding.

Further, since the bump forming substrate 5, the middle case 9 and the lid 10 are made of soda glass which is the same material, the direct joining technique of the soda glasses is used and the sealing joining is 3
Completed in 5 minutes at 00 ° C.

As described above, according to this embodiment, since the extraction electrode 7 of the element 8 is directly bonded to the bump electrode 4 of the bump forming substrate 5, the size can be reduced and the element used in a high frequency band can be used. When No. 8 is incorporated, the frequency variation of the electrical characteristics due to the inductance variation does not occur, the manufacturing process is simple and the manufacturing cost can be reduced.

Although the element 8 is a surface acoustic wave element in this embodiment, it may be another element such as a semiconductor element.
Further, Au is used as the plating material for the bump electrodes 4,
The material is not limited to Au, and various plating materials can be used by appropriately selecting the material of the extraction electrode 7 of the element 8. For example, the extraction electrode 7 of the element 8
When soldering the surface of the
u, Sn, or solder can be used, and when the surface of the take-out electrode 7 is Au, Au, S is used as the protruding electrode 4.
n, the solder can be used as long as it is formed on at least the surface, and when the surface of the extraction electrode 7 is Sn,
Au can be used as the protruding electrode 4.

In this embodiment, the electrode film 3 is made of Cu.
Although the / Cr two-layer laminated film is used, it is not limited to the Cu / Cr two-layer laminated film as long as it is a metal that can be plated.

For the alloy joining of the extraction electrode 7 and the protruding electrode 4, ultrasonic processing may be used together with pressurization and heating.

Further, the middle case 9 and the lid 10 of the present embodiment.
Instead of this, a cover (not shown) in which the middle case 9 and the lid 10 are integrated may be used.

(Second Embodiment) A second embodiment of the present invention will be described below with reference to the drawings.

As shown in FIG. 4, a package substrate 24 having a through hole 22 formed in an insulating substrate 21 made of an alumina plate and electrode films 23 provided on both sides around the through hole 22, an electrode film 23 and an alloy. Element 2 having extraction electrode 25 to be joined
6 and a metal lid 27 joined to the package substrate 24. In this embodiment, the element 26 has an electrode 26a.
A semiconductor element having

Hereinafter, a method of manufacturing the electronic component having the above structure will be described. First, the package substrate 24 shown in FIG.
Was created as follows. A through hole 2 is formed by sandblasting at a predetermined position of an insulating substrate 21 made of an alumina plate.
2 is formed, and after a metal mask is placed on the regions of the insulating substrate 21 where the electrode film 23 is not formed, the electrode film 23 is formed on both sides of the periphery including the through hole 22 by vacuum deposition or sputtering. Then, the package substrate 24 was formed. In this example, the electrode film 23 was formed by sputtering, a Ti film (film thickness: 50 nm) was formed in the lower layer, and an Au film (film thickness: 7 μm) was formed in the upper layer. Next, as shown in FIG. 6, the element 26 is aligned on the package substrate 24 so that the lead-out electrode 25 of the element 26 is aligned with the through hole 22, and the element 26 is pressurized and heated to take out the lead-out electrode 2.
5 and Al of the electrode film 23 are alloy-bonded. At this time, the size of the through hole 22 is smaller than the size of the extraction electrode 25, and the periphery thereof is covered with the bonding region between the extraction electrode 25 and the electrode film 23, thereby achieving sealing with the outside air. To be done. After that, the metal lid 27 is aligned with the package substrate 24 and joined by soldering to complete the electronic component.

As described above, according to this embodiment, the electrode film 2
By forming a projecting electrode by the step of No. 3 and sealing the through hole 22 by making the bonding portion of the electrode film 23 and the extraction electrode 25 surround the through hole 22, the effect of the first embodiment can be obtained. In addition, since the plating process is unnecessary, the package substrate 24 can be easily manufactured and the manufacturing cost can be further reduced. Although the element 26 is a semiconductor element in this embodiment, it may be another element such as a surface acoustic wave element. Further, Au is used as the electrode film 23 of the package substrate 24.
Although the / Ti laminated film was used, it is needless to say that the optimum configuration can be selected by combining it with the material of the extraction electrode 25. Further, instead of the metal lid 27, a cover in which the inner case 9 and the lid 10 or the inner case 9 and the lid 10 are integrated may be used.

[0028]

As is apparent from the above description, according to the present invention, a bump forming substrate having a bump electrode provided via an electrode film formed in a through hole of an insulating substrate, a surface electrode, and an extraction electrode are provided. The device has an element, a middle case, and a lid, and the protruding electrode and the lead-out electrode are joined together, and the lid is attached to the bump forming substrate and sealed and joined. A hole is provided, an electrode layer is formed on one surface of the insulating substrate including the through hole, then the surface of the insulating substrate on which the electrode film is formed other than the through hole is covered with an insulator, and only the through hole is plated and penetrated. Create a bump-formed substrate that fills the holes and is provided with protruding electrodes that are more protruding than the insulating substrate, align the extraction electrodes on the bump-formed substrate with the protruding electrodes, and then apply pressure and heat. Alloy Continuing, and by encapsulating with a middle case and lid, it can be miniaturized, and when incorporating an element used in the high frequency band, the frequency variation of the electrical characteristics does not occur due to inductance variation, the manufacturing process is simple and the cost is low. It is possible to realize an excellent electronic component that does not become expensive and a manufacturing method thereof.

[Brief description of drawings]

FIG. 1 is a sectional view of an electronic component according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a method of manufacturing a bump-formed substrate of the electronic component in the order of steps.

FIG. 3 is a cross-sectional view showing a state in which an element is bonded to a bump forming substrate of the electronic component.

FIG. 4 is a sectional view of an electronic component according to a second embodiment of the present invention.

FIG. 5 is a sectional view of a package substrate of the electronic component.

FIG. 6 is a cross-sectional view showing a state where an element is bonded to a package substrate of the electronic component.

FIG. 7 is an external perspective view showing the inside by partially omitting a conventional electronic component.

8 is a sectional view taken along line AA of FIG.

[Explanation of symbols]

 1 Insulating Substrate 2 Through Hole 3 Electrode Film 4 Projection Electrode 5 Bump Forming Substrate 6 Surface Electrode 7 Extraction Electrode 8 Element 9 Middle Case 10 Lid

Claims (8)

[Claims] 1. A bump forming substrate having a bump electrode provided via an electrode film formed in a through hole formed in an insulating substrate, a surface electrode bonded to the electrode film and connected to an external circuit, and the protrusion. An element having a lead-out electrode to be joined to the bump forming substrate disposed at a position corresponding to the electrode, a middle case made of metal, ceramic, or glass and a lid are provided, and the protruding electrode and the lead-out electrode are joined to each other. An electronic component in which a case and a lid are attached to the bump forming substrate and sealed and joined. 2. An element having a lead-out electrode, an electrode film formed on a through-hole formed in an insulating substrate and both side portions around the through-hole, and the surface side of the element being connected to the lead-out electrode. A package substrate having a structure in which an electrode film formation region is not larger than the extraction electrode region and a lid for sealing are provided, the electrode film and the extraction electrode are joined, and the lid is attached to the package substrate for sealing. Bonded electronic components. 3. An insulating substrate is provided with a through hole at a position corresponding to a lead-out electrode of an element, an electrode film is formed on one surface of the insulating substrate including the through hole, and then a portion other than the through hole of the insulating substrate is formed. A step of covering the surface on which the electrode film is formed with an insulator, plating only the through-holes, filling the through-holes, and forming a bump-forming substrate provided with a protruding electrode projecting from the insulating substrate. And a step of aligning the extraction electrode of the element on the bump formation substrate so as to be coincident with the protruding electrode, and then performing alloy connection by using pressure and heating or ultrasonic processing in combination, and then, metal Alternatively, there is provided a method of manufacturing an electronic component, which includes a ceramic or glass middle case and a step of sealing with a lid. 4. The method of manufacturing an electronic component according to claim 3, wherein the insulating substrate and the lid are joined by soldering, welding with glass, or joining with a resin adhesive. 5. The method of manufacturing an electronic component according to claim 3, wherein the glass-made insulating substrate and the same glass lid are bonded directly to each other. 6. A through-hole having a shape smaller than the area of the lead-out electrode is provided at a position corresponding to the lead-out electrode of the element of the insulating substrate, and an electrode film is formed on the through-hole of the insulating substrate and both side portions around the through-hole. And forming a package substrate having a structure in which the formation region of the electrode film on the surface side of the device that contacts the extraction electrode is not larger than the region of the extraction electrode, and the device on the package substrate. After aligning the extraction electrode so that it coincides with the electrode film of the through-hole, a step of alloy joining using pressure and heating or ultrasonic processing in combination, and then a step of sealing with a lid are performed. A manufacturing method of an electronic component having 7. The method of manufacturing an electronic component according to claim 6, wherein the insulating substrate and the lid are joined by soldering, welding with glass, or joining with a resin adhesive. 8. The method of manufacturing an electronic component according to claim 6, wherein the glass-made insulating substrate and the same glass lid are bonded directly to each other.