JP2006279483A - Surface acoustic wave device of surface mount type - Google Patents

Surface acoustic wave device of surface mount type Download PDF

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JP2006279483A
JP2006279483A JP2005095067A JP2005095067A JP2006279483A JP 2006279483 A JP2006279483 A JP 2006279483A JP 2005095067 A JP2005095067 A JP 2005095067A JP 2005095067 A JP2005095067 A JP 2005095067A JP 2006279483 A JP2006279483 A JP 2006279483A
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substrate
wiring pattern
conductor
insulating
acoustic wave
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Yasuhide Onozawa
康秀 小野澤
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Miyazaki Epson Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a small-sized, low-profile and low-cost surface acoustic wave (SAW) device of a resin seal type for employing CSP structure without deteriorating moisture resistance. <P>SOLUTION: The surface acoustic wave device 1 is provided with: a mount board 2 including a single layer ceramic substrate 3, wiring patterns 5, mount electrodes 4, and inner conductors 6 each making conductive the mount electrode 4 and the wiring pattern 5; a SAW chip 25 including a piezoelectric substrate 8, IDT electrodes 17, and connection electrodes 16; and a sealing resin 20 for forming a hermetic space S between the IDT electrodes and the mount board. Embedded positions of the inner conductors are configured so that the positions are located within the width of a skirt part of the sealing resin for configuring an outer hull of the hermetic space, part of the wiring patterns including upper ends of the inner conductors is covered with an insulation coat layer containing the same principal constituent as that of the single layer ceramic substrate, and at least part of the insulation coat layer corresponding to the upper end of the inner conductor is covered with the sealing resin. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、弾性表面波チップを実装基板上にバンプを用いて搭載してから弾性表面波チップを樹脂にて封止した構造の弾性表面波デバイスにおいて、実装基板を貫通する孔内に充填した内部導体が弾性表面波チップ内の気密性を害する原因となる不具合を解消した表面実装型弾性表面波デバイスに関するものである。   The present invention provides a surface acoustic wave device having a structure in which a surface acoustic wave chip is mounted on a mounting substrate using bumps and then the surface acoustic wave chip is sealed with a resin, and a hole penetrating the mounting substrate is filled. The present invention relates to a surface-mount type surface acoustic wave device that eliminates a problem that causes an internal conductor to impair airtightness in a surface acoustic wave chip.

弾性表面波デバイス(SAWデバイス)は、水晶等の圧電基板上に櫛歯状の電極指から成るIDT(インターディジタルトランスジューサ)電極を配置した構成を備え、例えばIDT電極に高周波電界を印加することによって弾性表面波を励起し、弾性表面波を圧電作用によって高周波電界に変換することによってフィルタ特性を得るものである。
半導体部品においてCSP(Chip Size Package)と呼ばれる小型パッケージング技術が一般化するのに伴って、SAWデバイスにおいても、デバイス小型化の容易化と、バッチ式の製造方法による生産性の向上という観点から、CSP技術を用いた生産方法が導入されるようになっている。CSP技術では樹脂を用いた封止工法が多く使用されている。
図3に従来技術によるCSP構造のSAWデバイスの一例を示す(例えば、WO97/02596、特開平9−162690号公報)。
このSAWデバイス101は、絶縁基板(単層アルミナセラミック基板)103、絶縁基板103の底部に設けた表面実装用の外部電極104、及び該絶縁基板の上面に設けた配線パターン105とから成る実装基板102と、配線パターン105上に導体バンプ110を介して電気的機械的に接続される接続パッド116、及びIDT電極117を下面に備えた圧電基板118から成るSAWチップ115と、配線パターン105の上面を含む実装基板102とSAWチップ115の側面及び上面に対して被覆一体化される樹脂120と、を備えている。樹脂120は、SAWチップ115の下面と実装基板102の上面との間に樹脂が充填されていないSAW伝搬用の気密空間Sが確保されるようにスクリーン印刷等により被覆形成される。
A surface acoustic wave device (SAW device) has a configuration in which an IDT (interdigital transducer) electrode composed of comb-like electrode fingers is disposed on a piezoelectric substrate such as a quartz crystal. For example, by applying a high frequency electric field to an IDT electrode Filter characteristics are obtained by exciting a surface acoustic wave and converting the surface acoustic wave into a high-frequency electric field by a piezoelectric action.
With the generalization of small packaging technology called CSP (Chip Size Package) in semiconductor parts, SAW devices are also easy to miniaturize and from the viewpoint of improving productivity by batch manufacturing methods. Production methods using CSP technology have been introduced. In the CSP technology, a sealing method using a resin is often used.
FIG. 3 shows an example of a SAW device having a CSP structure according to the prior art (for example, WO 97/02596, JP-A-9-162690).
This SAW device 101 is a mounting substrate comprising an insulating substrate (single layer alumina ceramic substrate) 103, an external electrode 104 for surface mounting provided on the bottom of the insulating substrate 103, and a wiring pattern 105 provided on the top surface of the insulating substrate. 102, a SAW chip 115 comprising a piezoelectric substrate 118 provided on the lower surface with connection pads 116 electrically connected to the wiring pattern 105 via conductor bumps 110, and an IDT electrode 117, and an upper surface of the wiring pattern 105 And a resin 120 that is coated and integrated with the side surface and the upper surface of the SAW chip 115. The resin 120 is coated and formed by screen printing or the like so that an airtight space S for SAW propagation that is not filled with resin is secured between the lower surface of the SAW chip 115 and the upper surface of the mounting substrate 102.

ところで、SAWデバイス101が縦横寸法が数mmの微小寸法である場合には、複数の実装基板102をシート状に連結した大面積の実装基板母材を用いたバッチ処理により量産され、実装基板母材上の各個片領域に対して、SAWチップ115のフリップチップ実装を行ってから、所定のマスクを用いたスクリーン印刷、或いはディスペンサによる塗布により樹脂120の被覆が行われる。この際、樹脂120は、各SAWチップ115間の谷間に充填されてSAWチップ115の裾部と実装基板上面との間の空間を気密封止する一方で、SAWチップ外面に対して密着して被覆される。
絶縁基板103の底部と上面に夫々設けた外部電極104、及び配線パターン105は、絶縁基板103に形成された貫通孔103aに充填された内部導体106によって電気的に接続されている。内部導体106は、セラミックグリーンシートに貫通孔103aを穿設し、この貫通孔103a内に導体ペーストを充填して焼成することで形成される。この導体ペーストの充填が不十分であると、焼成後に貫通孔103aと内部導体106との間の微小間隙を介してセラミック基板の内部導体部の気密性が劣化するという不具合が発生する。
図3の構造では、内部導体106が気密空間Sの直下に位置する絶縁基板103内に配置されているため、貫通孔103aと内部導体106との気密性が不十分な場合には外部から水分が気密空間S内に侵入して、内部空間に存在する金属を腐食させ、SAWデバイスの電気的特性を劣化させる原因となる。
By the way, when the SAW device 101 has a minute dimension of several millimeters in length and width, the SAW device 101 is mass-produced by batch processing using a large-area mounting board base material in which a plurality of mounting boards 102 are connected in a sheet shape, and the mounting board base After the SAW chip 115 is flip-chip mounted on each individual region on the material, the resin 120 is coated by screen printing using a predetermined mask or application by a dispenser. At this time, the resin 120 is filled in the valleys between the SAW chips 115 and hermetically seals the space between the bottom of the SAW chip 115 and the upper surface of the mounting substrate, while closely adhering to the outer surface of the SAW chip. Covered.
The external electrodes 104 and the wiring pattern 105 provided on the bottom and top surfaces of the insulating substrate 103 are electrically connected by an internal conductor 106 filled in a through hole 103 a formed in the insulating substrate 103. The internal conductor 106 is formed by drilling a through hole 103a in a ceramic green sheet, filling the through hole 103a with a conductive paste, and firing it. If the conductor paste is insufficiently filled, there arises a problem that the airtightness of the inner conductor portion of the ceramic substrate deteriorates through a minute gap between the through hole 103a and the inner conductor 106 after firing.
In the structure of FIG. 3, the internal conductor 106 is disposed in the insulating substrate 103 positioned immediately below the airtight space S. Therefore, when the airtightness between the through hole 103 a and the internal conductor 106 is insufficient, moisture is externally applied. Enters the airtight space S, corrodes the metal present in the internal space, and causes the electrical characteristics of the SAW device to deteriorate.

次に、図4に示すSAWデバイス101のように、実装基板102を構成する絶縁基板103を上層103Uと下層103Lから成る多層セラミック基板とし、上層103Uと下層103Lに夫々形成する各縦貫通孔103a’、103a”の横方向位置をずらすと共に、両縦貫通孔103a’、103a”間を横孔103'''によって連通した構造とした場合には、連通し合った各孔内に導体ペーストを充填して焼成した際に上層103Uと下層103Lとに夫々形成した内部導体106U、106Lの横方向位置が重ならなくなる。このように構成すれば、各縦貫通孔103a’、103a”及び横孔横孔103'''内への導体充填が不十分な場合であっても気密空間Sの気密性を確保することができる。
しかし、多層セラミック基板の製造に際しては、上層103Uと下層103Lの各々のセラミックグリーンシートに対して貫通孔穿設と導体充填を個別に行う必要があるので、製造工程が増大するという欠点がある。貫通孔の穿設方法が金型による打ち抜きである場合は、上層用と下層用の両方の金型を準備する必要があり、高価な打ち抜き用金型が複数個必要となってコスト増大をもたらす。貫通孔の穿設を金型による打ち抜きではなくNC加工機で行う場合は、穿設する貫通孔の数が単層セラミック基板の場合よりも多くなってしまうため、穿設完了までの時間が長くなってしまう。また、多層セラミック基板に対する配線パターンや外部電極となる導体パターンの印刷についても、上層と下層の各々のセラミックグリーンシートに対して行わなければならず、これも製造工程が増える原因となる。さらに、近年のデバイス薄型化によって実装基板についても薄肉化が進んでいるため、貫通孔穿設、導体充填、そして導体パターン印刷を終えた上層と下層の各々の薄型セラミックグリーンシートを積層する作業が非常に困難なものとなってきている。
このように、図4のような多層セラミック基板は、貫通孔内への導体充填が不十分な場合であっても内部空間の気密性を確保することができるが、上述のような多くの欠点がある。
Next, as in the SAW device 101 shown in FIG. 4, the insulating substrate 103 constituting the mounting substrate 102 is a multilayer ceramic substrate composed of the upper layer 103U and the lower layer 103L, and the vertical through holes 103a formed in the upper layer 103U and the lower layer 103L, respectively. In the case where the horizontal position of ', 103a "is shifted and both the vertical through-holes 103a' and 103a" are communicated by the lateral hole 103 '", the conductive paste is put in each of the communicated holes. When filled and fired, the lateral positions of the inner conductors 106U and 106L formed on the upper layer 103U and the lower layer 103L respectively do not overlap. With this configuration, the airtightness of the airtight space S can be ensured even when the conductors are not sufficiently filled in the vertical through holes 103a ′ and 103a ″ and the horizontal hole 103 ′ ″. it can.
However, when manufacturing a multilayer ceramic substrate, it is necessary to individually form through holes and fill conductors in each of the ceramic green sheets of the upper layer 103U and the lower layer 103L, which increases the manufacturing process. When the through-hole drilling method is punching with a mold, it is necessary to prepare both upper and lower molds, and a plurality of expensive punching molds are required, resulting in an increase in cost. . When drilling through holes with an NC machine instead of punching with a die, the number of through holes to be drilled is greater than with single-layer ceramic substrates, so the time to complete drilling is longer. turn into. Also, the wiring pattern on the multilayer ceramic substrate and the conductor pattern serving as the external electrode must be printed on each of the upper and lower ceramic green sheets, which also increases the number of manufacturing steps. Furthermore, since the mounting substrate is becoming thinner due to the recent thinning of devices, the work of laminating the thin ceramic green sheets on the upper and lower layers after through-hole drilling, conductor filling, and conductor pattern printing has been carried out. It has become very difficult.
As described above, the multilayer ceramic substrate as shown in FIG. 4 can ensure the airtightness of the internal space even when the conductor filling in the through hole is insufficient, but there are many disadvantages as described above. There is.

次に、図5に示したSAWデバイス101は、内部導体106をSAWチップ115の外側端縁の直下位置に相当する絶縁基板内部に配置すると共に、内部導体106の上端部を含む配線パターン105を封止樹脂120の裾部により被覆した構造を備えている。この構造によれば、貫通孔103aへの導体充填が不十分な場合でも、内部導体上面を覆う封止樹脂120の裾部によって気密空間Sへの水分侵入が防止できるように思える。しかし、実際には実装基板102の配線パターン105表面には半田やAuバンプとの接合を行うためにAuメッキが施されており、Auと樹脂との密着性の悪さから、内部導体106と貫通孔103aとの間から侵入した水分は、Auメッキと封止樹脂裾部との接触界面伝いに気密空間内へ侵入してしまう。また、封止樹脂はアルミナセラミックとの密着は良好なため、封止樹脂と絶縁基板との密着強度を上げるためにも、アルミナセラミック製絶縁基板面と封止樹脂との接触界面幅Fを極力大きくとるのが望ましいが、近年のデバイス小型化により、十分な接触界面幅Fを確保するのが困難になっている。図5のSAWデバイスのように内部導体上面を封止樹脂で覆った構造は、例えば特開2003−298389公報に開示されている。   Next, in the SAW device 101 shown in FIG. 5, the internal conductor 106 is disposed inside the insulating substrate corresponding to the position immediately below the outer edge of the SAW chip 115, and the wiring pattern 105 including the upper end portion of the internal conductor 106 is provided. A structure in which the sealing resin 120 is covered with a skirt is provided. According to this structure, even when the conductor filling into the through-hole 103a is insufficient, it seems that moisture can be prevented from entering the airtight space S by the skirt of the sealing resin 120 covering the upper surface of the inner conductor. However, in practice, the surface of the wiring pattern 105 of the mounting substrate 102 is plated with Au in order to bond with solder or Au bumps. Due to the poor adhesion between Au and resin, the inner conductor 106 and the through-hole are penetrated. Moisture that has entered from between the holes 103a enters the airtight space along the contact interface between the Au plating and the sealing resin skirt. Also, since the sealing resin has good adhesion to the alumina ceramic, the contact interface width F between the insulating substrate made of alumina ceramic and the sealing resin is set as much as possible in order to increase the adhesion strength between the sealing resin and the insulating substrate. Although it is desirable to make it large, it has become difficult to ensure a sufficient contact interface width F due to recent device miniaturization. A structure in which the upper surface of the inner conductor is covered with a sealing resin as in the SAW device of FIG. 5 is disclosed in, for example, Japanese Patent Application Laid-Open No. 2003-298389.

次に、図6は、内部導体106を導体バンプ110よりも中央寄りに配置し、内部導体106の上端部及び配線パターン105を封止樹脂120の裾部にて覆った構造である。このような構造の場合、アルミナセラミックからなる絶縁基板103面と封止樹脂120との接触界面幅は大きく確保しやすいが、内部導体が導体バンプ110よりも中央寄りに配置されるため、導体バンプ110の存在によって(導体バンプが障害となって)内部導体上端部とその周辺の配線パターン上面を封止樹脂により十分に覆うことが困難となる場合がある。
図6のように内部導体106を導体バンプよりも中央寄りに配置し、内部導体上端部及び配線パターン上面を封止樹脂で覆った構造は、例えば特開平11−74755号公報に開示されている。
WO97/02596 特開平9−162690号公報 特開2003−298389公報 特開平11−74755号公報
Next, FIG. 6 shows a structure in which the inner conductor 106 is disposed closer to the center than the conductor bump 110, and the upper end portion of the inner conductor 106 and the wiring pattern 105 are covered with the skirt portion of the sealing resin 120. In such a structure, the contact interface width between the surface of the insulating substrate 103 made of alumina ceramic and the sealing resin 120 is easy to ensure, but the inner conductor is disposed closer to the center than the conductor bump 110. Due to the presence of 110 (conductor bump becomes an obstacle), it may be difficult to sufficiently cover the upper end portion of the inner conductor and the upper surface of the surrounding wiring pattern with the sealing resin.
A structure in which the inner conductor 106 is disposed closer to the center than the conductor bump as shown in FIG. 6 and the upper end portion of the inner conductor and the upper surface of the wiring pattern are covered with a sealing resin is disclosed in, for example, Japanese Patent Laid-Open No. 11-74755. .
WO97 / 02596 JP 9-162690 A JP 2003-298389 A Japanese Patent Laid-Open No. 11-74755

本発明は上記に鑑みてなされたものであり、小型・薄型・低価格なCSP構造の樹脂封止型SAWデバイスを、耐湿性を劣化させることなしに実現することを目的としている。   The present invention has been made in view of the above, and an object thereof is to realize a resin-encapsulated SAW device having a small, thin, and low-cost CSP structure without deteriorating moisture resistance.

上記目的を達成するため、請求項1の発明は、単層セラミック基板、該単層セラミック基板の底部に配置した表面実装用の外部電極、前記単層セラミック基板の上部に配置された配線パターン、及び前記単層セラミック基板に形成した貫通孔に充填された導体によって形成され前記外部電極と前記配線パターン間を導通する内部導体と、を備えた実装基板と、圧電基板、該圧電基板の一面に形成したIDT電極、及び前記配線パターンと導体バンプを介して接続される接続電極、を備えたSAWチップと、前記SAWチップを前記実装基板上に前記導体バンプを用いてフリップチップ実装した状態で、前記SAWチップ外面から前記実装基板上面にかけて被覆形成されることにより前記IDT電極と前記実装基板との間に気密空間を形成する封止樹脂と、を備えた弾性表面波デバイスであって、前記内部導体の埋設位置を、前記気密空間部の外郭を構成する前記封止樹脂の裾部の幅内に位置するように構成し、前記内部導体上端部を含む前記配線パターンの一部を前記単層セラミック基板と同じ主成分を用いた絶縁コート層で覆い、かつ少なくとも前記絶縁コートの内部導体上端部に相当する部分を前記封止樹脂で覆ったことを特徴とする。
請求項2の発明は、請求項1において、前記絶縁コート層による被覆範囲は、前記配線パターンの周縁に位置する前記絶縁基板面にも延在していることを特徴とする。
請求項3の発明は、請求項1、又は2において、前記絶縁コート層は、前記実装基板の絶縁体材料がアルミナセラミックの場合にはアルミナコート、ガラスセラミックの場合にはガラスセラミックコートであることを特徴とする。
In order to achieve the above object, the invention of claim 1 includes a single-layer ceramic substrate, an external electrode for surface mounting disposed at the bottom of the single-layer ceramic substrate, a wiring pattern disposed above the single-layer ceramic substrate, And a mounting substrate comprising a conductor filled in a through-hole formed in the single-layer ceramic substrate and an internal conductor that conducts between the external electrode and the wiring pattern, a piezoelectric substrate, and one surface of the piezoelectric substrate In a state where the formed IDT electrode and the SAW chip including the connection pattern connected to the wiring pattern via a conductor bump and the SAW chip are flip-chip mounted on the mounting substrate using the conductor bump, An airtight space is formed between the IDT electrode and the mounting substrate by covering the SAW chip from the outer surface to the upper surface of the mounting substrate. A surface acoustic wave device comprising a stop resin, wherein the embedded position of the internal conductor is positioned within the width of the bottom portion of the sealing resin that forms the outline of the hermetic space portion, A part of the wiring pattern including the upper end portion of the inner conductor is covered with an insulating coat layer using the same main component as the single-layer ceramic substrate, and at least a portion corresponding to the upper end portion of the inner conductor of the insulating coat is sealed. It is characterized by being covered with resin.
According to a second aspect of the present invention, in the first aspect of the present invention, the area covered by the insulating coating layer extends to the surface of the insulating substrate located at the periphery of the wiring pattern.
A third aspect of the present invention is the first or second aspect, wherein the insulating coating layer is an alumina coating when the insulating material of the mounting substrate is an alumina ceramic, and a glass ceramic coating when the insulating material is a glass ceramic. It is characterized by.

本発明のSAWデバイスによれば、気密空間の直下位置に相当する絶縁基板部分には内部導体を配置しないように構成したため、貫通孔と内部導体との間の気密性が不十分な場合に、水分等が直接内部空間に侵入することを防止できる。
また、内部導体の上端部とその周辺の配線パターン部分、更には配線パターン周辺の絶縁基板表面部分を、単層セラミック基板と同じ主成分を用いた絶縁コート層で覆ったので、絶縁コート層と配線パターン上のAu膜との間の密着強度と、絶縁コート層と封止樹脂との密着強度を夫々高めることができ、耐湿性を向上できる。
更に、内部導体を導体バンプよりも外側(SAWデバイス端面寄り)に設けているため、導体バンプの存在によって(導体バンプが障害となって)内部導体上面を封止樹脂で覆えなくなるということがなくなる。
また、絶縁基板を単層セラミック基板にて構成したため、製造コストを低減し、生産性を高めることができる。
以上の構成を備えた本発明によれば、小型・薄型・低価格なCSP構造の樹脂封止型SAWデバイスを、耐湿性を劣化させることなしに実現できる。
According to the SAW device of the present invention, since the internal conductor is not disposed in the insulating substrate portion corresponding to the position immediately below the airtight space, when the airtightness between the through hole and the internal conductor is insufficient, It is possible to prevent moisture and the like from directly entering the internal space.
In addition, since the upper end portion of the inner conductor and the surrounding wiring pattern portion, and further, the insulating substrate surface portion around the wiring pattern are covered with the insulating coating layer using the same main component as the single-layer ceramic substrate, the insulating coating layer and The adhesion strength between the Au film on the wiring pattern and the adhesion strength between the insulating coating layer and the sealing resin can be increased, and the moisture resistance can be improved.
Furthermore, since the inner conductor is provided outside the conductor bump (near the end face of the SAW device), the upper surface of the inner conductor cannot be covered with the sealing resin due to the presence of the conductor bump (the conductor bump becomes an obstacle). .
In addition, since the insulating substrate is composed of a single-layer ceramic substrate, manufacturing costs can be reduced and productivity can be increased.
According to the present invention having the above-described configuration, it is possible to realize a resin-encapsulated SAW device having a small, thin, and low-cost CSP structure without deteriorating moisture resistance.

以下、本発明を図面に示した実施の形態により詳細に説明する。
図1(a)は本発明の一実施形態に係る表面実装型弾性表面波デバイス(以下、SAWデバイス、という)の縦断面図であり、(b)は要部拡大断面図である。
このSAWデバイス1は、実装基板2上にSAWチップ15を搭載し、更にSAWチップ15の外面を封止樹脂20にて被覆した構成を備えている。
実装基板2は、単層セラミック基板としての平板状の絶縁基板3、絶縁基板3の底部に設けた表面実装用の実装電極4、及び絶縁基板3の上面に設けられ且つ内部導体6を介して実装電極4と導通した配線パターン5、を備えている。単層セラミック基板としては、例えば単層アルミナセラミック基板、或いは単層ガラスセラミックを用いることができる。実装電極4及び配線パターン5は、夫々タングステンから成るベース4a、5a上にニッケルメッキ層4b、5b、Auメッキ層4c、5cを順次積層した構成を有している。また、内部導体6はタングステンにて構成されている。
SAWチップ15は、絶縁基板3の上面に設けた各配線パターン5と導体バンプ10を介して電気的機械的に接続される接続パッド16、及びIDT電極17を夫々水晶等の圧電基板18の下面に備えている。接続パッド16は、IDT電極17の外周を包囲するように配置されている。IDT電極17は、高周波電界を印加されることによって弾性表面波を励起し、弾性表面波を圧電反作用によって高周波電界に変換することによってフィルタ特性を得ることができる。IDT電極17及び接続パッド16は、フォトエッチング等の微細加工技術によって圧電基板18の主面に形成される。
封止樹脂20は、スクリーン印刷、或いはディスペンサを用いた充填によって、SAWチップ15の下面を除いた外面と実装基板上面にかけて被覆されることにより実装基板2上にSAWチップ15を固定すると共に、SAWチップ15の裾部(下面外周縁)と実装基板上面との間の空間に充填されることにより、SAWチップ15下面と実装基板2上面との間に気密空間Sを形成する。
内部導体6は、絶縁基板3に貫通形成した貫通孔3a内に導体を埋設することによって形成される。具体的には、セラミックグリーンシートに貫通孔3aを穿設し、この貫通孔3a内に導体ペーストを充填して焼成することで形成される。
Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings.
FIG. 1A is a longitudinal sectional view of a surface-mounted surface acoustic wave device (hereinafter referred to as a SAW device) according to an embodiment of the present invention, and FIG.
This SAW device 1 has a configuration in which a SAW chip 15 is mounted on a mounting substrate 2 and the outer surface of the SAW chip 15 is covered with a sealing resin 20.
The mounting substrate 2 is a flat insulating substrate 3 as a single-layer ceramic substrate, a mounting electrode 4 for surface mounting provided at the bottom of the insulating substrate 3, and an upper surface of the insulating substrate 3 and via an internal conductor 6. A wiring pattern 5 electrically connected to the mounting electrode 4 is provided. As the single layer ceramic substrate, for example, a single layer alumina ceramic substrate or a single layer glass ceramic can be used. The mounting electrode 4 and the wiring pattern 5 have a structure in which nickel plating layers 4b and 5b and Au plating layers 4c and 5c are sequentially laminated on bases 4a and 5a made of tungsten, respectively. The inner conductor 6 is made of tungsten.
The SAW chip 15 includes a connection pad 16 that is electrically and mechanically connected to each wiring pattern 5 provided on the upper surface of the insulating substrate 3 via the conductor bump 10 and an IDT electrode 17 on the lower surface of the piezoelectric substrate 18 such as crystal. In preparation. The connection pad 16 is disposed so as to surround the outer periphery of the IDT electrode 17. The IDT electrode 17 can obtain a filter characteristic by exciting a surface acoustic wave by applying a high-frequency electric field and converting the surface acoustic wave into a high-frequency electric field by a piezoelectric reaction. The IDT electrode 17 and the connection pad 16 are formed on the main surface of the piezoelectric substrate 18 by a fine processing technique such as photoetching.
The sealing resin 20 is coated over the outer surface excluding the lower surface of the SAW chip 15 and the upper surface of the mounting substrate by screen printing or filling with a dispenser, thereby fixing the SAW chip 15 on the mounting substrate 2 and the SAW chip 15. An airtight space S is formed between the lower surface of the SAW chip 15 and the upper surface of the mounting substrate 2 by filling the space between the skirt (the outer peripheral edge of the lower surface) of the chip 15 and the upper surface of the mounting substrate.
The internal conductor 6 is formed by burying a conductor in a through hole 3 a formed through the insulating substrate 3. Specifically, the through hole 3a is formed in the ceramic green sheet, and the through hole 3a is filled with a conductive paste and fired.

この実施形態の特徴的な構成は、内部導体6の埋設位置を、気密空間Sの外郭を構成する封止樹脂20の裾部20aの幅F内に位置するように構成し、更に内部導体6の上端部とその周辺の配線パターン5の一部を、単層セラミック基板3と同じ主成分を用いた絶縁コート層30にて被覆し、かつ少なくとも絶縁コート層30の内部導体上端部6aに相当する部分を封止樹脂20で覆った点にある。絶縁コート層30が被覆する範囲は、少なくとも内部導体6の上端部6aとその周辺の配線パターン5部分、好ましくは更に配線パターン周辺の絶縁基板表面部分にまで拡張することが好ましい。なお、幅Fは、封止樹脂20の裾部と絶縁コート層30との接触界面幅である。
絶縁コート層30の材質としては、単層セラミック基板3が単層アルミナセラミック基板の場合はアルミナ、単層ガラスセラミック基板の場合はガラスセラミックとする。
図1(b)に示すように絶縁コート層30は、配線パターンのタングステンベース5a上にニッケルメッキ層5b、Auメッキ層5cを積層する前に、タングステンベース5aの外側端縁から所要幅の範囲にかけて積層される。
The characteristic configuration of this embodiment is such that the embedded position of the internal conductor 6 is positioned within the width F of the skirt 20a of the sealing resin 20 that forms the outline of the airtight space S, and further the internal conductor 6 A part of the upper end of the wiring pattern and a part of the peripheral wiring pattern 5 are covered with the insulating coating layer 30 using the same main component as the single-layer ceramic substrate 3, and at least correspond to the inner conductor upper end 6a of the insulating coating layer 30. The portion to be covered is covered with the sealing resin 20. The range covered by the insulating coat layer 30 is preferably extended to at least the upper end portion 6a of the internal conductor 6 and the surrounding wiring pattern 5 portion, and preferably further to the insulating substrate surface portion around the wiring pattern. The width F is a contact interface width between the skirt portion of the sealing resin 20 and the insulating coat layer 30.
The material of the insulating coating layer 30 is alumina when the single-layer ceramic substrate 3 is a single-layer alumina ceramic substrate, and glass ceramic when the single-layer ceramic substrate 3 is a single-layer glass ceramic substrate.
As shown in FIG. 1B, the insulating coating layer 30 has a range of required width from the outer edge of the tungsten base 5a before the nickel plating layer 5b and the Au plating layer 5c are laminated on the tungsten base 5a of the wiring pattern. Is laminated.

図2は本発明のSAWデバイスの製造手順の説明図であり、実装基板2に対してSAWチップ15を組み付ける手順を示している。なお、実際には大面積の実装基板ウェハを用いたバッチ処理による製造が行われるが、説明を簡略化するため、本図においては個片についての製造手順を示す。
まず、絶縁基板3を構成するセラミックシート(グリーンシート)に実装電極4、配線パターン5、内部電極6を形成するための導体(タングステン)を形成し、続いて絶縁基板3の上面の所要範囲に絶縁コート30(アルミナコート)を塗布してから焼成する。その後、絶縁基板上に露出した金属パターンである実装電極ベース4aと、配線パターンベース5aに対してニッケルメッキ層4b、5bと、Auメッキ層4c、5cを順次成膜する。
絶縁コート層30は、実装基板2の上面外周縁に沿って所要幅にて帯状に積層形成されており、絶縁コート層30は配線パターン5(タングステンベース5a)の外側端縁から所要幅の範囲を被覆するように積層される。この状態で実装基板を焼成し、一方、SAWチップ15の各接続パッド16に予めバンプ10を固定した状態で、各バンプ10を各配線パターン5上の接合位置に固着することにより、実装基板2に対するSAWチップを搭載し、その後、真空雰囲気中にて封止樹脂20を塗布、充填することによりSAWデバイス1を完成する。
FIG. 2 is an explanatory diagram of the manufacturing procedure of the SAW device of the present invention, and shows the procedure for assembling the SAW chip 15 to the mounting substrate 2. Actually, manufacturing is performed by batch processing using a mounting substrate wafer having a large area, but in order to simplify the description, a manufacturing procedure for individual pieces is shown in this drawing.
First, a conductor (tungsten) for forming the mounting electrode 4, the wiring pattern 5, and the internal electrode 6 is formed on a ceramic sheet (green sheet) constituting the insulating substrate 3, and subsequently, within a required range on the upper surface of the insulating substrate 3. The insulating coat 30 (alumina coat) is applied and then fired. Thereafter, nickel plating layers 4b and 5b and Au plating layers 4c and 5c are sequentially formed on the mounting electrode base 4a, which is a metal pattern exposed on the insulating substrate, and the wiring pattern base 5a.
The insulating coat layer 30 is laminated in a strip shape with a required width along the outer peripheral edge of the upper surface of the mounting substrate 2, and the insulating coat layer 30 is within a range of the required width from the outer edge of the wiring pattern 5 (tungsten base 5 a). Are laminated so as to cover. In this state, the mounting substrate is baked. On the other hand, the bumps 10 are fixed to the connection positions on the wiring patterns 5 with the bumps 10 fixed to the connection pads 16 of the SAW chip 15 in advance. The SAW device 1 is mounted, and then the sealing resin 20 is applied and filled in a vacuum atmosphere to complete the SAW device 1.

本発明に係るSAWデバイスは次のような効果を奏する。
即ち、本発明のSAWデバイスにあっては、絶縁基板の貫通孔3aと内部導体6との間の微小間隙を介して気密空間S内に外部から浸透する可能性のある水分を遮断するために、気密空間Sの直下位置に相当する絶縁基板部分には内部導体6を配置しないように構成したため、貫通孔3aと内部導体6との間の気密性が不十分な場合に、水分等が直接内部空間に侵入することを防止できる。
更に、気密空間Sの気密性、防水性(耐湿性)を高めるために、本実施形態では、内部導体6の上端部6aとその周辺の配線パターン5部分、更には配線パターン周辺の絶縁基板表面部分を、単層セラミック基板と同じ主成分を用いた絶縁コート層30で覆った。絶縁コート層30は、実装基板3の絶縁体材料がアルミナセラミックの場合にはアルミナコート、ガラスセラミックの場合にはガラスセラミックコートとする。絶縁コートは、ペースト状の絶縁体材料を、貫通孔穿設・導体充填・導体パターン印刷を終えたセラミックグリーンシート上に印刷工程により塗布し、セラミックグリーンシートとともに同時に焼成して固化される。
絶縁コート層30を被覆する他のメリットは次の通りである。即ち、上記焼成工程の後、絶縁基板3上の導体パターン(配線パターン:例えばタングステン膜)上には、半田やAuバンプとの接合性を高めるために、Niメッキ膜と、Auメッキ膜を順次施す工程が実施されるが、絶縁コート層30上にはメッキ膜は付着しない。絶縁コート層30上にはAuメッキ膜が存在しないため、絶縁コート層30上面の少なくとも内部導体上端部とその周辺に相当する配線パターン部分に封止樹脂20を密着させた状態で強固に被覆することができる。つまり、アルミナ、或いはガラスセラミック等のセラミック材料を主成分とする絶縁コート層30と、封止樹脂20とによって接触界面を形成することができる。封止樹脂20とアルミナコート層30との密着強度、または封止樹脂20とガラスセラミックコート層30との密着強度は、封止樹脂とAuメッキとの間の密着強度よりも強いため、内部導体6を充填した貫通孔3aから浸入した水分が、絶縁コート層30と封止樹脂との接触界面伝いに気密空間Sへ浸入することを抑制できる。更に、絶縁シート層30と配線パターン(タングステン膜)との接合強度は、封止樹脂とAu膜との接合強度よりも強いため、耐湿性を更に高めることができる。
The SAW device according to the present invention has the following effects.
That is, in the SAW device of the present invention, in order to block moisture that may permeate from the outside into the airtight space S through the minute gap between the through hole 3a of the insulating substrate and the internal conductor 6. Since the internal conductor 6 is not disposed on the insulating substrate portion corresponding to the position directly below the airtight space S, moisture or the like is directly applied when the airtightness between the through hole 3a and the internal conductor 6 is insufficient. Intrusion into the internal space can be prevented.
Furthermore, in order to improve the airtightness and waterproofness (moisture resistance) of the airtight space S, in this embodiment, the upper end portion 6a of the internal conductor 6 and the surrounding wiring pattern 5 portion, and further the insulating substrate surface around the wiring pattern The portion was covered with an insulating coat layer 30 using the same main component as the single-layer ceramic substrate. The insulating coat layer 30 is an alumina coat when the insulating material of the mounting substrate 3 is an alumina ceramic, and a glass ceramic coat when the insulating material is a glass ceramic. The insulating coat is formed by applying a paste-like insulating material onto a ceramic green sheet that has been subjected to through-hole drilling, conductor filling, and conductor pattern printing by a printing process, and is simultaneously fired and solidified together with the ceramic green sheet.
Other advantages of covering the insulating coat layer 30 are as follows. That is, after the firing step, a Ni plating film and an Au plating film are sequentially formed on the conductor pattern (wiring pattern: for example, tungsten film) on the insulating substrate 3 in order to improve the bonding property with solder or Au bumps. However, the plating film does not adhere on the insulating coat layer 30. Since there is no Au plating film on the insulating coat layer 30, the sealing resin 20 is firmly covered with the sealing resin 20 in close contact with at least the upper end portion of the inner conductor on the upper surface of the insulating coat layer 30 and the wiring pattern portion corresponding to the periphery thereof. be able to. That is, the contact interface can be formed by the insulating coating layer 30 mainly composed of a ceramic material such as alumina or glass ceramic and the sealing resin 20. Since the adhesion strength between the sealing resin 20 and the alumina coating layer 30 or the adhesion strength between the sealing resin 20 and the glass ceramic coating layer 30 is stronger than the adhesion strength between the sealing resin and the Au plating, the internal conductor 6 can be prevented from entering the airtight space S through the contact interface between the insulating coating layer 30 and the sealing resin. Furthermore, since the bonding strength between the insulating sheet layer 30 and the wiring pattern (tungsten film) is stronger than the bonding strength between the sealing resin and the Au film, the moisture resistance can be further improved.

このように本発明によれば、図5に示した従来構成におけるセラミック製絶縁基板と封止樹脂との接合幅Fよりも、セラミック絶縁コート層30と封止樹脂20との接触界面幅Fを大きく確保できるため、封止樹脂と実装基板との密着強度が向上し、耐湿性が向上される。具体的には、SAWデバイスの縦横寸法が数mmの微小寸法である場合には、セラミックと封止樹脂との接触界面幅Fは0.15mm以上であることが望ましく、これよりも小さくなると耐湿性が劣化する場合があるが、本実施形態によれば上記数値を超えた接触界面幅Fを確保できるので、耐湿性を高めることができる。
更に、本発明では、内部導体6は導体バンプ10よりも外側(SAWデバイス端面寄り)に設けているため、図6に示した従来例の場合のように、導体バンプの存在によって(導体バンプが障害となって)内部導体上面を封止樹脂で覆えなくなるということがなくなる。
また、本発明では、絶縁基板3を単層セラミック基板にて構成したため、貫通孔3aの穿設方法が金型による打ち抜きである場合に、多層セラミック基板にて絶縁基板を構成した場合よりも、使用する打ち抜き用金型の個数が少なくて済み、製造コストを低減できる。また、貫通孔3aの穿設を金型による打ち抜きではなくNC加工機にて行う場合、穿設する貫通孔3aの数が多層セラミック基板の場合よりも少なくて済むため、穿設作業を単時間に完了することができ、トータルの生産性を高めることができる。特に、単層セラミック基板を用いた場合には、多層セラミック基板を用いた場合に必要とされるセラミックグリーンシート毎の貫通孔の穿設、各貫通孔内への導体ペーストの充填、そして導体パターン印刷を終えたセラミックグリーンシートを他のセラミックグリーンシートに積層する必要がなくなるため、製造手数が大幅に低減する。このためSAWデバイスの薄型化に寄与することができる。
以上の構成を備えた本発明によれば、小型・薄型・低価格なCSP構造の樹脂封止型SAWデバイスを、耐湿性を劣化させることなしに実現できる。
Thus, according to the present invention, the contact interface width F between the ceramic insulating coating layer 30 and the sealing resin 20 is set to be larger than the bonding width F between the ceramic insulating substrate and the sealing resin in the conventional configuration shown in FIG. Since it can ensure large, the adhesive strength of sealing resin and a mounting board | substrate improves, and moisture resistance improves. Specifically, when the SAW device has a micro dimension of several millimeters in length and width, the contact interface width F between the ceramic and the sealing resin is desirably 0.15 mm or more. However, according to the present embodiment, the contact interface width F exceeding the above numerical value can be secured, so that the moisture resistance can be improved.
Furthermore, in the present invention, the inner conductor 6 is provided outside the conductor bump 10 (closer to the end face of the SAW device). Therefore, as in the conventional example shown in FIG. This prevents the upper surface of the inner conductor from being covered with the sealing resin.
In the present invention, since the insulating substrate 3 is constituted by a single-layer ceramic substrate, when the through hole 3a is punched by a die, the insulating substrate is constituted by a multilayer ceramic substrate. The number of punching dies to be used is small, and the manufacturing cost can be reduced. Further, when the through holes 3a are drilled by an NC processing machine instead of punching with a mold, the number of through holes 3a to be drilled is smaller than in the case of a multilayer ceramic substrate, so that the drilling operation can be performed for a single time. Can be completed, and total productivity can be increased. In particular, when a single-layer ceramic substrate is used, through holes are formed for each ceramic green sheet, which is required when a multilayer ceramic substrate is used, a conductive paste is filled in each through-hole, and a conductor pattern Since it is not necessary to laminate the printed ceramic green sheet on another ceramic green sheet, the number of manufacturing steps is greatly reduced. For this reason, it can contribute to thickness reduction of a SAW device.
According to the present invention having the above-described configuration, it is possible to realize a resin-encapsulated SAW device having a small, thin, and low-cost CSP structure without deteriorating moisture resistance.

(a)は本発明の一実施形態に係る表面実装型弾性表面波デバイスの縦断面図、(b)は要部拡大断面図。(A) is a longitudinal cross-sectional view of the surface-mount type surface acoustic wave device according to one embodiment of the present invention, and (b) is an enlarged cross-sectional view of a main part. 本発明のSAWデバイスの製造手順の説明図。Explanatory drawing of the manufacture procedure of the SAW device of this invention. 第1の従来例の構成説明図。The structure explanatory view of the 1st conventional example. 第2の従来例の構成説明図。The structure explanatory view of the 2nd conventional example. 第3の従来例の構成説明図。The structure explanatory view of the 3rd conventional example. 第4の従来例の構成説明図。The structure explanatory view of the 4th conventional example.

符号の説明Explanation of symbols

1 弾性表面波デバイス(SAWデバイス)、2 実装基板、3 絶縁基板、4 実装電極、5 配線パターン、5a 露出領域、6 内部導体、10 導体バンプ、15 SAW(弾性表面波)チップ、16 接続パッド、17 IDT電極、18 圧電基板、20 封止樹脂、30 樹脂コート層。   DESCRIPTION OF SYMBOLS 1 Surface acoustic wave device (SAW device), 2 mounting board, 3 insulating board, 4 mounting electrode, 5 wiring pattern, 5a exposed area, 6 internal conductor, 10 conductor bump, 15 SAW (surface acoustic wave) chip, 16 connection pad , 17 IDT electrode, 18 piezoelectric substrate, 20 sealing resin, 30 resin coating layer.

Claims (3)

単層セラミック基板、該単層セラミック基板の底部に配置した表面実装用の外部電極、前記単層セラミック基板の上部に配置された配線パターン、及び前記単層セラミック基板に形成した貫通孔に充填された導体によって形成され前記外部電極と前記配線パターン間を導通する内部導体と、を備えた実装基板と、
圧電基板、該圧電基板の一面に形成したIDT電極、及び前記配線パターンと導体バンプを介して接続される接続電極、を備えたSAWチップと、
前記SAWチップを前記実装基板上に前記導体バンプを用いてフリップチップ実装した状態で、前記SAWチップ外面から前記実装基板上面にかけて被覆形成されることにより前記IDT電極と前記実装基板との間に気密空間を形成する封止樹脂と、を備えた弾性表面波デバイスであって、
前記内部導体の埋設位置を、前記気密空間部の外郭を構成する前記封止樹脂の裾部の幅内に位置するように構成し、
前記内部導体上端部を含む前記配線パターンの一部を前記単層セラミック基板と同じ主成分を用いた絶縁コート層で覆い、かつ少なくとも前記絶縁コートの内部導体上端部に相当する部分を前記封止樹脂で覆ったことを特徴とする表面実装型弾性表面波デバイス。
A single-layer ceramic substrate, a surface-mount external electrode disposed at the bottom of the single-layer ceramic substrate, a wiring pattern disposed above the single-layer ceramic substrate, and a through-hole formed in the single-layer ceramic substrate are filled. A mounting board comprising an inner conductor formed between the external electrode and the wiring pattern formed by a conductor,
A SAW chip comprising a piezoelectric substrate, an IDT electrode formed on one surface of the piezoelectric substrate, and a connection electrode connected to the wiring pattern via a conductor bump;
In a state where the SAW chip is flip-chip mounted on the mounting substrate using the conductor bumps, the SAW chip is covered and formed from the outer surface of the SAW chip to the upper surface of the mounting substrate, thereby airtight between the IDT electrode and the mounting substrate. A surface acoustic wave device comprising: a sealing resin that forms a space;
The embedded position of the inner conductor is configured to be positioned within the width of the bottom portion of the sealing resin that forms the outline of the hermetic space portion,
A part of the wiring pattern including the upper end portion of the inner conductor is covered with an insulating coat layer using the same main component as the single-layer ceramic substrate, and at least a portion corresponding to the upper end portion of the inner conductor of the insulating coat is sealed. A surface-mount surface acoustic wave device that is covered with resin.
前記絶縁コート層による被覆範囲は、前記配線パターンの周縁に位置する前記絶縁基板面にも延在していることを特徴とする請求項1に記載の表面実装型弾性表面波デバイス。   The surface-mount type surface acoustic wave device according to claim 1, wherein a coverage area by the insulating coat layer extends also to the insulating substrate surface located at a peripheral edge of the wiring pattern. 前記絶縁コート層は、前記実装基板の絶縁体材料がアルミナセラミックの場合にはアルミナコート、ガラスセラミックの場合にはガラスセラミックコートであることを特徴とする請求項1、又は2に記載の表面実装型弾性表面波デバイス。   3. The surface mounting according to claim 1, wherein the insulating coating layer is an alumina coating when the insulating material of the mounting substrate is an alumina ceramic, and a glass ceramic coating when the insulating material is a glass ceramic. Type surface acoustic wave device.
JP2005095067A 2005-03-29 2005-03-29 Surface acoustic wave device of surface mount type Pending JP2006279483A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100843419B1 (en) 2006-12-06 2008-07-03 삼성전기주식회사 Semiconductor chip package and manufacturing the same
JP2015146523A (en) * 2014-02-03 2015-08-13 京セラ株式会社 Acoustic wave element and acoustic wave device
CN113889446A (en) * 2020-07-02 2022-01-04 江苏中科智芯集成科技有限公司 Wafer-level chip packaging structure and packaging method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100843419B1 (en) 2006-12-06 2008-07-03 삼성전기주식회사 Semiconductor chip package and manufacturing the same
JP2015146523A (en) * 2014-02-03 2015-08-13 京セラ株式会社 Acoustic wave element and acoustic wave device
CN113889446A (en) * 2020-07-02 2022-01-04 江苏中科智芯集成科技有限公司 Wafer-level chip packaging structure and packaging method

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