JPH08213435A - Bonding method and its device - Google Patents
Bonding method and its deviceInfo
- Publication number
- JPH08213435A JPH08213435A JP1669395A JP1669395A JPH08213435A JP H08213435 A JPH08213435 A JP H08213435A JP 1669395 A JP1669395 A JP 1669395A JP 1669395 A JP1669395 A JP 1669395A JP H08213435 A JPH08213435 A JP H08213435A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- connection terminal
- protective film
- protection film
- ball
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10162—Shape being a cuboid with a square active surface
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子回路基板の配線間
あるいは端子間の接続に用いるボンディング方法に係
り、特に保護膜で被覆されている接続端子を対象とした
ボンディング方法およびその装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding method used for connecting wirings or terminals of an electronic circuit board, and more particularly to a bonding method and apparatus for connecting terminals covered with a protective film.
【０００２】[0002]
【従来の技術】従来、電子回路基板の配線間あるいは端
子間の接続に用いるボンディング方法は、特開昭６１−
７１６４２号に記載のネイルヘッドボンディングといわ
れる方法や、特開昭５７−１７３９５１号にウエッジボ
ンディングといわれる方法が記載されているが、いずれ
も接続端子表面を露出させておく必要がある。2. Description of the Related Art Conventionally, a bonding method used for connecting wirings or terminals of an electronic circuit board is disclosed in Japanese Patent Laid-Open No. 61-
The method called nail head bonding described in Japanese Patent No. 71642 and the method called wedge bonding described in Japanese Patent Application Laid-Open No. 57-173951 have been disclosed, but the surfaces of the connection terminals must be exposed.
【０００３】[0003]
【発明が解決しようとする課題】このように、従来の技
術は、露出した接続端子に対してのみ有効である為、保
護膜で被覆された接続端子に対しては、何らかの手段を
用いて保護膜を除去し、接続端子表面を露出させる必要
がある。As described above, since the conventional technique is effective only for the exposed connection terminal, the connection terminal covered with the protective film is protected by some means. It is necessary to remove the film to expose the surface of the connection terminal.
【０００４】本発明の目的は、保護膜で被覆されている
接続端子にボンディングする方法において、保護膜を除
去しない、すなわち接続端子表面を露出させず、保護膜
上からボンディングするボンディング方法およびその装
置を提供することにある。An object of the present invention is a bonding method and apparatus for bonding to a connection terminal covered with a protective film, in which the protective film is not removed, that is, the surface of the connection terminal is not exposed and bonding is performed from above the protective film. To provide.
【０００５】[0005]
【課題を解決するための手段】上記目的は、保護膜で被
覆されている接続端子にボンディングする方法におい
て、保護膜を除去しない、すなわち接続端子表面を露出
させず、保護膜上からボンディングワイヤもしくは先端
がボール状のボンディングワイヤを平坦な加熱チップを
用いて加圧しながら通電加熱を行うと共に、超音波を印
加してボンディングすることを特徴とするボンディング
方法およびその装置。また、前記通電加熱は、ボンディ
ングエネルギーであると共に保護膜のヤング率を低下さ
せることを特徴とするボンディング方法およびその装
置。また、前記加圧は、ボンディングエネルギーである
と共に保護膜を変形させることを特徴とするボンディン
グ方法およびその装置。また、前記超音波は、ボンディ
ングエネルギーであると共に保護膜を変形させることを
特徴とするボンディング方法およびその装置によって達
成される。In the method of bonding to a connection terminal covered with a protective film, the above object is not to remove the protective film, that is, to not expose the surface of the connection terminal, and to bond the bonding wire or A bonding method and apparatus, wherein a bonding wire having a ball-shaped tip is electrically heated while being pressed by using a flat heating chip, and ultrasonic waves are applied for bonding. Further, the above-mentioned energization heating reduces the Young's modulus of the protective film as well as the bonding energy, and a bonding method and apparatus therefor. The bonding method and apparatus are characterized in that the pressing is a bonding energy and also deforms the protective film. Further, the ultrasonic wave is achieved by a bonding method and apparatus which is characterized in that the ultrasonic wave is a bonding energy and deforms the protective film.
【０００６】[0006]
【作用】加熱されたボンディングチップおよびボンディ
ングワイヤまたはボールは、接続端子保護膜のヤング率
を大幅に低下させる。この時ボンディングワイヤまたは
ボールには一定の荷重と超音波が加わっており、保護膜
を形成させる。変形した保護膜は接続端子表面から押し
出されボンディングワイヤまたはボールが接続端子と接
触し、通電加熱と加圧、さらに超音波によってボンディ
ングが行われる。The heated bonding tip and bonding wire or ball significantly reduce the Young's modulus of the connection terminal protective film. At this time, a constant load and ultrasonic waves are applied to the bonding wire or ball to form a protective film. The deformed protective film is extruded from the surface of the connection terminal, and the bonding wire or ball comes into contact with the connection terminal, and the bonding is performed by energization heating and pressurization and ultrasonic waves.
【０００７】[0007]
【実施例】以下、本発明の実施例を図面を用いて説明す
る。図３は本発明の対象となる電子回路基板を示す。セ
ラミックスと厚膜ペーストで形成された配線層からなる
多層基板５上に、ＰＩＱの絶縁保護膜４、Ｃｕあるいは
Ａｌを配線８とした薄膜パターンが形成され、その上に
多数のＬＳＩチップがＣＣＢ接続される。このように多
数のＬＳＩチップを搭載する回路基板をマルチチップモ
ジュール（ＭＣＭ）と称する。このＭＣＭ基板には、回
路変更に備えて接続用の端子３が形成されている。これ
らの接続端子３は、通常はＣＣＢはんだ接続時の望まし
くないブリッジ形成を防ぐために、ＰＩＱ等の絶縁保護
膜４で被覆されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 3 shows an electronic circuit board which is the subject of the present invention. On the multi-layer substrate 5 consisting of a wiring layer formed of ceramics and a thick film paste, a PIQ insulation protection film 4 and a thin film pattern of Cu or Al wiring 8 are formed, and a large number of LSI chips are CCB-connected on it. To be done. A circuit board on which a large number of LSI chips are mounted in this way is called a multi-chip module (MCM). On this MCM board, terminals 3 for connection are formed in preparation for a circuit change. These connection terminals 3 are usually covered with an insulating protective film 4 such as PIQ in order to prevent undesirable bridge formation during CCB solder connection.
【０００８】何等かの理由により（検査により不良が発
見された場合、あるいは設計変更の必要が生じた場合な
ど）、特定の接続端子３に接続する必要が生じた場合、
図１ａに示すように先端にボール１を形成したボンディ
ングワイヤを接続端子３（ＰＩＱで被覆）の上に配置す
る。When it is necessary to connect to a specific connection terminal 3 for some reason (when a defect is found by inspection or when it is necessary to change the design),
A bonding wire having a ball 1 formed at its tip as shown in FIG. 1a is placed on the connection terminal 3 (covered with PIQ).
【０００９】次に図１ｂに示すように、ボール１の上部
からボンディングチップで加圧すると同時に通電加熱す
る。さらに超音波を印加することでボンディングが完了
する。図１ｃはボンディング完了後を示しているが、こ
のようにボンディング部１’の上面の形状が平坦になる
ようにボンディングすれば、ボンディング部１’の上に
さらに重ねてボンディングすることができる。Next, as shown in FIG. 1b, pressure is applied from the upper part of the ball 1 by the bonding tip and, at the same time, electric heating is performed. Bonding is completed by applying ultrasonic waves. Although FIG. 1c shows the state after the bonding is completed, if the bonding is performed such that the shape of the upper surface of the bonding section 1 ′ becomes flat, the bonding section 1 ′ can be further overlapped and bonded.
【００１０】又、図１ｄに示すようにワイヤ部２を切り
放し、ボンディング部１’をＵＶ硬化形のエポキシ系樹
脂等により絶縁保護を行えば、ＬＳＩのＣＣＢはんだ接
続時のショート防止になる。Further, as shown in FIG. 1d, if the wire portion 2 is cut off and the bonding portion 1'is insulated and protected by a UV curing type epoxy resin or the like, short-circuiting at the time of CCB solder connection of the LSI can be prevented.
【００１１】図２は本発明であるボンディング装置の一
例を示している。ボンディングチップ６は、チップホル
ダ７に保持され、超音波振動子８が押し付けられる。こ
れらを含むヘッド部は荷重調整機構を持ち、最適な加圧
力を実現する。上記ボンディングチップ６はタングステ
ンを精密加工したもので、高精度な加熱電源１０と相ま
って本発明の特徴であるボンディングエネルギーおよび
保護膜４のヤング率を低下させる熱を発する。又、超音
波振動子８で発生する超音波のパワー、時間は、超音波
発振器９でコントロールされチップホルダ７に伝わり、
ボンディングチップ６の先端で最大振幅となる。又、上
記通電加熱および超音波の発生タイミングはコントロー
ラ１１によって制御される。FIG. 2 shows an example of the bonding apparatus of the present invention. The bonding tip 6 is held by the tip holder 7 and the ultrasonic transducer 8 is pressed against it. The head part including these has a load adjusting mechanism and realizes an optimum pressing force. The bonding chip 6 is a precision-machined tungsten, and in combination with the highly accurate heating power source 10, generates the bonding energy and the heat that lowers the Young's modulus of the protective film 4, which are the features of the present invention. Further, the power and time of the ultrasonic wave generated by the ultrasonic vibrator 8 are controlled by the ultrasonic oscillator 9 and transmitted to the chip holder 7,
The maximum amplitude is obtained at the tip of the bonding tip 6. Further, the controller 11 controls the above-mentioned electrical heating and ultrasonic wave generation timing.
【００１２】[0012]
【発明の効果】本発明によれば、従来のボンディング方
法では、必ず必要であった接続端子上の保護膜除去作業
をなくすことができ、保護膜除去作業への設備や人材の
投資が不要となり、ボンディングを含む作業時間を短縮
することができる。According to the present invention, it is possible to eliminate the work of removing the protective film on the connection terminal, which is always necessary in the conventional bonding method, and the investment of equipment and human resources for the work of removing the protective film becomes unnecessary. The working time including bonding can be shortened.
【００１３】また本発明によれば、電子回路基板を大き
くする事なく、ほぼＬＳＩチップの領域内に補修配線を
施して、しかもＬＳＩチップとのはんだ等による接続個
所に影響を及ぼすことなく、論理修正を可能にすること
ができる。Further, according to the present invention, the repair wiring is provided almost in the area of the LSI chip without enlarging the electronic circuit board, and the connection point by the solder and the like to the LSI chip is not affected, and the logic is achieved. Modifications can be allowed.
【図１】本発明を説明するためのボンディングワイヤと
ボンディング対象物との関係を示す説明図である。FIG. 1 is an explanatory diagram showing a relationship between a bonding wire and a bonding object for explaining the present invention.
【図２】本発明であるボンディング装置の一例の構成図
である。FIG. 2 is a configuration diagram of an example of a bonding apparatus according to the present invention.
【図３】本発明の対象である電子回路基板の構成図であ
る。FIG. 3 is a configuration diagram of an electronic circuit board which is a target of the present invention.
１…ボール、 ２…ワイヤ、 ３
…接続端子、４…絶縁保護膜、 ５…セラミック
ス多層基板、６…ボンディングチップ、７…チップホル
ダ、 ８…超音波振動子、９…超音波発振器、
10…加熱電源、 11…コントローラ、12…配
線層、 13…ＬＳＩチップ。1 ... Ball, 2 ... Wire, 3
... Connection terminals, 4 ... Insulation protective film, 5 ... Ceramic multilayer substrate, 6 ... Bonding chip, 7 ... Chip holder, 8 ... Ultrasonic vibrator, 9 ... Ultrasonic oscillator,
10 ... Heating power supply, 11 ... Controller, 12 ... Wiring layer, 13 ... LSI chip.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 谷 光清 神奈川県秦野市堀山下１番地 株式会社日 立製作所汎用コンピュータ事業部内 (72)発明者 片山 薫 神奈川県秦野市堀山下１番地 株式会社日 立製作所汎用コンピュータ事業部内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsuyoshi Tani 1 Horiyamashita, Hadano City, Kanagawa Pref., General Computer Division, Hitachi, Ltd. (72) Kaoru Katayama 1 Horiyamashita, Hadano, Kanagawa Tate Works General Computer Division
Claims (4)
ィングする方法において、保護膜を除去しない、すなわ
ち接続端子表面を露出させず、保護膜上からボンディン
グワイヤもしくは先端がボール状のボンディングワイヤ
を平坦な加熱チップを用いて加圧しながら通電加熱を行
うと共に、超音波を印加してボンディングするこちを特
徴とするボンディング方法およびその装置。1. A method of bonding to a connection terminal covered with a protective film, wherein the protective film is not removed, that is, the surface of the connection terminal is not exposed, and a bonding wire or a bonding wire having a ball-shaped tip is formed on the protective film. A bonding method and apparatus, characterized in that a flat heating chip is used to apply heat while applying pressure and ultrasonic waves are applied.
であると共に保護膜のヤング率を低下させることを特徴
とする請求項１記載のボンディング方法およびその装
置。2. The bonding method and apparatus according to claim 1, wherein the heating by energization lowers Young's modulus of the protective film as well as bonding energy.
ると共に保護膜を形成させることを特徴とする請求項１
記載のボンディング方法およびその装置。3. The pressurizing is a bonding energy and forms a protective film.
Bonding method and apparatus therefor.
あると共に保護膜を形成させることを特徴とする請求項
１記載のボンディング方法およびその装置。4. The bonding method and apparatus according to claim 1, wherein the ultrasonic waves are bonding energy and form a protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1669395A JPH08213435A (en) | 1995-02-03 | 1995-02-03 | Bonding method and its device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1669395A JPH08213435A (en) | 1995-02-03 | 1995-02-03 | Bonding method and its device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08213435A true JPH08213435A (en) | 1996-08-20 |
Family
ID=11923389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1669395A Pending JPH08213435A (en) | 1995-02-03 | 1995-02-03 | Bonding method and its device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08213435A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2324519A1 (en) * | 2008-09-09 | 2011-05-25 | Philips Intellectual Property & Standards GmbH | Contacting a device with a conductor |
-
1995
- 1995-02-03 JP JP1669395A patent/JPH08213435A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2324519A1 (en) * | 2008-09-09 | 2011-05-25 | Philips Intellectual Property & Standards GmbH | Contacting a device with a conductor |
| JP2012502422A (en) * | 2008-09-09 | 2012-01-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Method for contacting a device with a conductor |
| US9362525B2 (en) | 2008-09-09 | 2016-06-07 | Koninklijke Philips Electronics N.V. | OLED device in contact with a conductor |
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