JPH0383352A - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JPH0383352A
JPH0383352A JP1220774A JP22077489A JPH0383352A JP H0383352 A JPH0383352 A JP H0383352A JP 1220774 A JP1220774 A JP 1220774A JP 22077489 A JP22077489 A JP 22077489A JP H0383352 A JPH0383352 A JP H0383352A
Authority
JP
Japan
Prior art keywords
bonding pad
grooves
bonding
electrode
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1220774A
Other languages
Japanese (ja)
Inventor
Toshiaki Umemoto
梅本　利明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP1220774A priority Critical patent/JPH0383352A/en
Publication of JPH0383352A publication Critical patent/JPH0383352A/en
Pending legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
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    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/4845—Details of ball bonds
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    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract

PURPOSE:To prevent a crack from being generated in the base of a bonding pad by a method wherein a plurality of grooves are formed in the surface of the bonding pad. CONSTITUTION:A bonding pad is formed on a base insulating film 5, a bonding pad window 2 is formed into a square of one side of about 100mum and a bonding pad electrode 1 is formed of an Al-silicon-copper alloy film of a thickness of about 1mum. Grooves 3, which are respectively about 1.5mum in width and is about 0.5mum in depth, are formed in the surface of the Al electrode 1 in every about 10mum. These grooves 3 are formed by etching partially the to electrode by a photolithography dry etching method and have almost a vertical sectional form. The width of the grooves 3 is selected in such a way that when gold wires are pressed to the pad and ultrasonic vibrations are applied, the surface of the Al electrode is crushed and becomes almost smooth. Moreover, the depth of the grooves 3 is selected in such a way that damage does not enter the film 5.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体集積回路のボンディング・パッドの構
造に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to the structure of bonding pads for semiconductor integrated circuits.

従来の技術 半導体集積回路のワイヤボンディング法として現在多く
用いられる技術は、金ワイヤを用いた超音波併用熱圧着
法である（参考文献：例えばＳ、　Ｍ、　Ｓｚｅ編、“
ＶＬＳＩ　ＴＥＣＨＮＯＬＯＧＹ”　、ＭｃＧＲＡＷ−
ＨＩＬＬ社、１９８３刊、５５５頁）。Conventional technology The technology currently widely used as a wire bonding method for semiconductor integrated circuits is the ultrasonic thermocompression bonding method using gold wire (References: for example, edited by S. M. Sze, “
VLSI TECHNOLOGY”, McGRAW-
HILL Publishing, 1983, p. 555).

半導体チップ側のボンディング・パッド電極材料には平
滑なアルミ合金薄膜が用いられる。超音波併用熱圧着法
ではワイヤとボンディング・パッドとの接続は、金ワイ
ヤを加熱して金ボールを形成し、これをアルミ・ボンデ
ィング・パッドに押し付けた後ワイヤに超音波振動を与
えアルミ薄膜層表面に変形を起こさせることにより、ア
ルミ薄膜表面のアルミナ層を破壊して金とアルミを直接
接触させ、超音波振動入力で発生する摩擦熱で両者を界
面で合金化させる。A smooth aluminum alloy thin film is used as the bonding pad electrode material on the semiconductor chip side. In the ultrasonic thermocompression bonding method, the wire and bonding pad are connected by heating the gold wire to form a gold ball, pressing it against the aluminum bonding pad, and applying ultrasonic vibration to the wire to form a thin aluminum film layer. By deforming the surface, the alumina layer on the surface of the aluminum thin film is destroyed, bringing the gold and aluminum into direct contact, and the frictional heat generated by the ultrasonic vibration input alloys the two at the interface.

発明が解決しようとする課題 超音波併用熱圧着法で良好なワイヤボンディングを形成
するためには、金ボールをアルミ・ボンディング・パッ
ドに押し付けるボンディング荷重と超音波振動の振幅の
設定が極めて重要である。Problems to be Solved by the Invention In order to form a good wire bond using ultrasonic thermocompression bonding, it is extremely important to set the bonding load that presses the gold ball against the aluminum bonding pad and the amplitude of the ultrasonic vibration. .

すなわち、ボンディング荷重や超音波振幅はアルミナ層
を充分に破壊できるほどに大きくなければならないが、
一方ボンディング荷重や超音波振幅が大きすぎると金ワ
イヤ線が切れたリボンディング・パッド下の絶縁膜にク
ラックが入ったりする（第３図参照）。In other words, the bonding load and ultrasonic amplitude must be large enough to sufficiently destroy the alumina layer.
On the other hand, if the bonding load or ultrasonic amplitude is too large, cracks may appear in the insulating film under the rebonding pad where the gold wire is cut (see Figure 3).

一般にアルミ・ボンディング・パッドの機械的強度が増
すほどアルミナ層を破壊するのに必要な超音波振幅は大
きくなり、したがってボンディング時にパッド下の絶縁
膜に損傷を与える可能性が増す。Generally, the greater the mechanical strength of an aluminum bonding pad, the greater the ultrasonic amplitude required to destroy the alumina layer, and therefore the greater the possibility of damaging the insulating film beneath the pad during bonding.

近年半導体集積回路の微細化が進み配線幅も狭くなった
結果、エレクトロマイグレーション対策あるいはストレ
スマイグレーション対策としてアルミ配線に銅などの不
純物元素を添加するのが一般的になってきたが、アルミ
配線に銅などの不純物元素を添加するとアルミ配線の機
械的強度は極めて大きくなる。従ってこれらアルミ合金
で形成されたボンディング・パッドのボンディング時に
は、ボンディング・パッド下の絶縁膜に損傷が発生する
可能性が大きい。In recent years, as semiconductor integrated circuits have become smaller and the wiring width has become narrower, it has become common to add impurity elements such as copper to aluminum wiring as a countermeasure against electromigration or stress migration. Adding impurity elements such as aluminum wiring greatly increases the mechanical strength of the aluminum wiring. Therefore, when bonding pads made of these aluminum alloys are bonded, there is a high possibility that the insulating film under the bonding pads will be damaged.

本発明の目的は上記の問題点を解決することにある。An object of the present invention is to solve the above problems.

課題を解決するための手段 本発明では問題を解決するための手段として、ボンディ
ング・パッド電極表面に複数の溝を形成する。Means for Solving the Problems In the present invention, as a means for solving the problems, a plurality of grooves are formed on the surface of the bonding pad electrode.

作用 良好なワイヤボンドを得る為にボンディング・パッドが
有すべき特性は、ボンディング・パッド層の表面が機械
的に柔軟で、内部が機械的に強固であることである。す
なわち、ボンディング・パッド表面は小さなボンディン
グ荷重および超音波振幅で容易に変形して表面のアルミ
ナ膜を破壊し、一方ボンディング・パッド内部は容易に
は変形ｆｆ、ボンディング・パッドの下地に変位を与え
難いのが望ましい。The characteristics that a bonding pad must have in order to obtain a well-functioning wire bond are that the surface of the bonding pad layer is mechanically flexible and the interior thereof is mechanically strong. In other words, the surface of the bonding pad is easily deformed by a small bonding load and ultrasonic amplitude, destroying the alumina film on the surface, while the inside of the bonding pad is not easily deformed, and it is difficult to displace the base of the bonding pad. is desirable.

本発明では第２図＋ａ＋に示すように、アルミ層１の表
面に複数の溝３を設けることにより、ボンディング・パ
ッド表面部の有効面積をボンディング・パッド内部より
減少させている。このため表面部は内部より機械的に柔
軟である。従って第２図（′ｂ）に示す金ワイヤ・ボン
ディング時には、表面層は容易に変形してアルミナ層を
破壊し良好なボンディングを形成する。一方、大きな断
面積を有するボンディング・パッド内部は容易には変形
せず、下地絶縁膜５に損傷が及ぶのを防ぐ。In the present invention, as shown in FIG. 2+a+, by providing a plurality of grooves 3 on the surface of the aluminum layer 1, the effective area of the surface portion of the bonding pad is reduced compared to the inside of the bonding pad. The surface portion is therefore mechanically more flexible than the interior. Therefore, during the gold wire bonding shown in FIG. 2('b), the surface layer is easily deformed to destroy the alumina layer and form a good bond. On the other hand, the inside of the bonding pad, which has a large cross-sectional area, is not easily deformed and damage to the underlying insulating film 5 is prevented.

実施例 本発明の実施例を第１図を用いて説明する。第１図は本
発明による半導体装置のボンディング・パッド部の平面
図ｆａｔおよび断面図（ｂ）である。本実施例のボンデ
ィング・パッドは下地絶縁膜５の上に形成され、ボンデ
ィング・パッド窓２は一辺約１００μｍの正方形で、ボ
ンディング・パッド電極１は厚さ約１μｍのアルミ、シ
リコン、鋼合金で形成されている。アルミ電極の表面に
は約１０μｍ毎に幅約１．５μｍ１深さ約０．５μｍの
溝３が形成されている。この溝３はフォトリソグラフィ
ー・ドライエツチング法でアルミ電極を部分的にエツチ
ングして形成されたもので、はぼ垂直な断面形状を有し
ている。溝３の幅は、金ワイヤをパッドに押し付は超音
波振動を加えた時にアルミ表面が潰れてほぼ平滑になる
よう（第２図ｔｂ＋参照）選択されている。また溝３の
深さは、下地絶縁膜５に損傷が入らぬように選択されて
いる。Embodiment An embodiment of the present invention will be described with reference to FIG. FIG. 1 is a plan view (fat) and a cross-sectional view (b) of a bonding pad portion of a semiconductor device according to the present invention. The bonding pad of this embodiment is formed on a base insulating film 5, the bonding pad window 2 is square with a side of about 100 μm, and the bonding pad electrode 1 is made of aluminum, silicon, and steel alloy with a thickness of about 1 μm. has been done. Grooves 3 each having a width of about 1.5 μm and a depth of about 0.5 μm are formed at intervals of about 10 μm on the surface of the aluminum electrode. This groove 3 is formed by partially etching the aluminum electrode using a photolithography/dry etching method, and has a substantially vertical cross-sectional shape. The width of the groove 3 is selected so that when the gold wire is pressed against the pad and ultrasonic vibrations are applied, the aluminum surface is crushed and becomes almost smooth (see Figure 2 tb+). Further, the depth of the groove 3 is selected so as not to damage the underlying insulating film 5.

発明の効果 本発明によれば、半導体装置のボンディング・パッド電
極に機械的に強固な材料を使用しても、ボンディング・
パッド下地にクラックの発生などの損傷を与えることな
く、超音波併用熱圧着法で良好なワイヤボンディングを
行えるようになった。Effects of the Invention According to the present invention, even if a mechanically strong material is used for the bonding pad electrode of a semiconductor device, bonding and
It is now possible to perform good wire bonding using ultrasonic thermocompression bonding without causing damage such as cracks to the pad base.

１・・・・・・アルミ層、２・・・・・・ボンディング
・パッド窓、３・・・・・・アルミ表面に形成された溝
、４・・・・・・保護膜、５・・・・・・下地絶縁膜、
６・・・・・・金ワイヤ、７・・・・・・金ボール、８
・・・・・・ワイヤボンディングの衝撃で下地絶縁膜に
形成されたクラック、９・・・・・・ボンディング荷重
、１０・・・・・・超音波振動。1... Aluminum layer, 2... Bonding pad window, 3... Groove formed on aluminum surface, 4... Protective film, 5... ...base insulating film,
6...Gold wire, 7...Gold ball, 8
. . . Cracks formed in the underlying insulating film due to the impact of wire bonding, 9 . . . Bonding load, 10 . . Ultrasonic vibration.

Claims (1)

【特許請求の範囲】[Claims] 表面に複数の溝を有するボンディング・パッド電極を持
つことを特徴とする半導体装置。A semiconductor device characterized by having a bonding pad electrode having a plurality of grooves on its surface.
JP1220774A 1989-08-28 1989-08-28 Semiconductor device Pending JPH0383352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1220774A JPH0383352A (en) 1989-08-28 1989-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1220774A JPH0383352A (en) 1989-08-28 1989-08-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0383352A true JPH0383352A (en) 1991-04-09

Family

ID=16756353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1220774A Pending JPH0383352A (en) 1989-08-28 1989-08-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0383352A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5277356A (en) * 1992-06-17 1994-01-11 Rohm Co., Ltd. Wire bonding method
JP2007165884A (en) * 2005-12-09 2007-06-28 Agere Systems Inc Integrated circuit having bondpad in which thermal and mechanical properties are improved
DE102016115848A1 (en) 2016-08-25 2018-03-01 Infineon Technologies Ag Semiconductor devices and methods of forming a semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5277356A (en) * 1992-06-17 1994-01-11 Rohm Co., Ltd. Wire bonding method
JP2007165884A (en) * 2005-12-09 2007-06-28 Agere Systems Inc Integrated circuit having bondpad in which thermal and mechanical properties are improved
DE102016115848A1 (en) 2016-08-25 2018-03-01 Infineon Technologies Ag Semiconductor devices and methods of forming a semiconductor device
CN107785343A (en) * 2016-08-25 2018-03-09 英飞凌科技股份有限公司 Semiconductor device and the method for forming semiconductor device
US10867893B2 (en) 2016-08-25 2020-12-15 Infineon Technologies Ag Semiconductor devices and methods for forming a semiconductor device
DE102016115848B4 (en) 2016-08-25 2024-02-01 Infineon Technologies Ag Semiconductor components and method for forming a semiconductor component

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