JPH08191179A - Forming method of solder dam for solder bump and forming method of solder bump - Google Patents

Forming method of solder dam for solder bump and forming method of solder bump

Info

Publication number
JPH08191179A
JPH08191179A JP130795A JP130795A JPH08191179A JP H08191179 A JPH08191179 A JP H08191179A JP 130795 A JP130795 A JP 130795A JP 130795 A JP130795 A JP 130795A JP H08191179 A JPH08191179 A JP H08191179A
Authority
JP
Japan
Prior art keywords
solder
bump
electrode
dam
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP130795A
Other languages
Japanese (ja)
Inventor
Tsutomu Sakatsu
務 坂津
Yoshihiro Yoshida
芳博 吉田
Toshiaki Iwabuchi
寿章 岩渕
Satoshi Kuwazaki
聡 桑崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP130795A priority Critical patent/JPH08191179A/en
Publication of JPH08191179A publication Critical patent/JPH08191179A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3452Solder masks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3478Applying solder preforms; Transferring prefabricated solder patterns

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

PURPOSE: To provide a forming method of a solder dam for solder bump which prevents solder on a board electrode flowing out at the time of reflowing, in the case of face down reflow mount using solder bumps. CONSTITUTION: An example of forming a solder dam is as follows. When a solder bump is formed on an electrode 2 on a board 1 by using a solder grain 3, thermosetting solder resist 5 is spread on the electrode 2, and a transfer plate 6 wherein a protrusion is formed so as to correspond to the part where the solder bump is to be formed is pressed against the board 1. In this state, the solder resist 5 is heated and hardened by using a heater 7 or the like. By removing the transfer plate 6 after hardening, a recessed part 8 turning to a solder dam for a solder bump is formed in the solder resist of a solder grain mount part. A solder grain 3 is arranged in the recessed part 8, heated, and fixed. Thereby a solder dam for preventing solder flowing-out can be formed by a small number of processes, and the formation of a solder bump is also facilitated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、一般的な電子部品など
の実装等、電極同士を電気的に接続する必要のある構造
に関係する技術であって、特に半田バンプを使ったLS
I(LargeScale Integration)等の電子部品の実装
構造及びその製造方法に係わる半田バンプ用半田ダムの
形成方法及び半田バンプの形成方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique relating to a structure in which electrodes need to be electrically connected to each other, such as mounting of general electronic parts, and in particular, LS using solder bumps.
The present invention relates to a solder dam solder dam forming method and a solder bump forming method relating to a mounting structure of an electronic component such as I (Large Scale Integration) and a manufacturing method thereof.

【0002】[0002]

【従来の技術】半田バンプを用いたフェイスダウンリフ
ロー実装では、LSI等のチップ側に半田バンプを形成
する例があり(例えば、Tsuyoshi Hayashi,”An Innov
ativeBonding Technique for Optical Chips Using So
lder Bumps That EliminateChip Positioning Adjustme
nts”,IEEE TRANSACTIONS ON COMPONENTS,HYBRIDS,AND
MANUFACTURING TECHNOLOGY,VOL.15,NO.2,APRIL 199
2)、メッキ法等のウェットプロセスを用いてLSIの
電極上に半田を所定量設けている。しかし、この方法だ
とLSIの製造段階に特別のプロセスを追加しなくては
ならない。
2. Description of the Related Art In face-down reflow mounting using solder bumps, there is an example of forming solder bumps on the chip side of an LSI or the like (for example, Tsuyoshi Hayashi, “An Innov.
ativeBonding Technique for Optical Chips Using So
lder Bumps That EliminateChip Positioning Adjustme
nts ”, IEEE TRANSACTIONS ON COMPONENTS, HYBRIDS, AND
MANUFACTURING TECHNOLOGY, VOL.15, NO.2, APRIL 199
2) A predetermined amount of solder is provided on the electrodes of the LSI by using a wet process such as a plating method. However, with this method, a special process must be added at the LSI manufacturing stage.

【0003】通常、LSIの電極はアルミニウム(A
l)で形成されており、電極上に半田粒子を溶融させて
接合することはできない。そこでLSI側に導電粒子を
マウントし、基板側に設けた半田バンプをリフローさ
せ、セルフアライメント効果を狙う構造が考えられてい
る。しかし、基板側電極上で半田を溶融すると、半田は
電極に沿って流れてしまい、セルフアライメント効果が
得られなくなる可能性がある。例えば図7に示すよう
に、基板1の電極2の上に半田バンプを形成する際に、
基板1上の電極2の上に半田粒子3を載せてヒーター7
等で加熱し溶融させると、半田3は電極2に沿って流
れ、接続部の半田量が少なくなる。このためセルフアラ
イメント効果が得られなくなる可能性がある。
Usually, the electrodes of the LSI are aluminum (A
Since it is formed by l), the solder particles cannot be melted and bonded on the electrodes. Therefore, a structure has been considered in which conductive particles are mounted on the LSI side and solder bumps provided on the substrate side are reflowed to aim for a self-alignment effect. However, if the solder is melted on the board-side electrode, the solder may flow along the electrode and the self-alignment effect may not be obtained. For example, as shown in FIG. 7, when forming a solder bump on the electrode 2 of the substrate 1,
Solder particles 3 are placed on the electrodes 2 on the substrate 1 and the heater 7
When it is heated and melted by such as the solder 3, the solder 3 flows along the electrode 2, and the amount of solder in the connecting portion is reduced. Therefore, the self-alignment effect may not be obtained.

【0004】[0004]

【発明が解決しようとする課題】本発明は上記事情に鑑
みなされたものであって、半田バンプを用いたフェイス
ダウンリフロー実装の際に、リフローしても基板電極上
の半田が流れださないようにする半田バンプ用半田ダム
の形成方法を提供するものである。また、本発明は、上
記半田ダムと半田パンプとを同時に形成し、半田バンプ
の形成工程をより簡略化できる半田バンプの形成方法を
提供するものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and in face-down reflow mounting using solder bumps, the solder on the substrate electrode does not flow even if reflowed. The present invention provides a method for forming a solder bump solder dam. Further, the present invention provides a method for forming solder bumps, in which the solder dam and the solder bump are simultaneously formed to further simplify the solder bump forming process.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するた
め、請求項1記載の半田バンプ用半田ダムの形成方法で
は、基板の電極上に半田粒子を用いて半田バンプを設け
る際に、前記電極上に熱硬化型ソルダーレジストを塗布
し、半田バンプを設ける箇所に対応して凸部を設けた転
写板を前記基板に押圧したまま加熱硬化し、硬化後に転
写板を取り除くことにより、半田粒子マウント部分のソ
ルダーレジストに半田バンプ用の半田ダムとなる凹部を
形成することを特徴としている。
In order to achieve the above object, in a method for forming a solder dam for a solder bump according to claim 1, when a solder bump is provided on a substrate electrode by using solder particles, the electrode is provided. Solder particle mount by applying a thermosetting solder resist on top, heat-curing the transfer plate with protrusions corresponding to the places where solder bumps are provided while pressing it against the substrate, and removing the transfer plate after curing. It is characterized in that a recess serving as a solder dam for a solder bump is formed in a portion of the solder resist.

【0006】請求項2記載の半田バンプ用半田ダムの形
成方法では、基板の電極上に半田粒子を用いて半田バン
プを設ける際に、前記電極上に光硬化型ソルダーレジス
トを塗布し、半田バンプを設ける箇所に対応して凸部を
設けた透明な転写板を前記基板に押圧したまま転写板の
上部より光照射し、硬化後に転写板を取り除くことによ
り、半田粒子マウント部分のソルダーレジストに半田バ
ンプ用の半田ダムとなる凹部を形成することを特徴とし
ている。
According to a second aspect of the present invention, there is provided a solder bump solder dam forming method, wherein when a solder bump is provided on a substrate electrode by using solder particles, a photocurable solder resist is applied onto the electrode to form a solder bump. The transparent transfer plate provided with convex portions corresponding to the places where is provided is irradiated with light from above the transfer plate while pressing the substrate, and the transfer plate is removed after curing, so that the solder resist on the solder particle mount part is soldered. It is characterized by forming a concave portion which becomes a solder dam for bumps.

【0007】請求項3記載の半田バンプ用半田ダムの形
成方法では、基板の電極上に半田粒子を用いて半田バン
プを設ける際に、前記電極上にソルダーレジストを塗布
し、硬化後、半田バンプを設ける箇所に対応して、先端
に所望の曲率を持った針状の突孔治具を1本あるいは複
数本押圧することにより、所定の場所に半田バンプ用の
半田ダムとなる凹部を形成することを特徴としている。
According to a third aspect of the present invention, there is provided a solder dam forming method for solder bumps, wherein when a solder bump is provided on a substrate electrode by using solder particles, a solder resist is applied onto the electrode and after curing, the solder bump is applied. Corresponding to the place where the point is provided, by pressing one or a plurality of needle-shaped projecting hole jigs having a desired curvature at the tip, a concave portion to be a solder dam for a solder bump is formed at a predetermined position. It is characterized by that.

【0008】請求項4記載の半田バンプ用半田ダムの形
成方法では、請求項3において、針状の突孔治具を押圧
すると同時に超音波を印加することを特徴としている。
According to a fourth aspect of the present invention, there is provided a solder bump solder dam forming method according to the third aspect, wherein an ultrasonic wave is applied simultaneously with pressing the needle-shaped projecting hole jig.

【0009】請求項5記載の半田バンプの形成方法で
は、基板の電極上に半田粒子を用いて半田バンプを設け
る際に、前記電極上の所望の位置に所定量の半田を配置
させ、半田の融点近傍温度で基板の下から加熱し、電極
との界面付近のみが溶融した段階で温度を下げて半田を
固定した後、光硬化型ソルダーレジストを塗布し、上面
より光照射してソルダーレジストを硬化することにより
半田ダムと半田バンプを形成することを特徴としてい
る。
According to a fifth aspect of the present invention, there is provided a method of forming a solder bump, wherein when a solder bump is provided on a substrate electrode by using solder particles, a predetermined amount of solder is arranged at a desired position on the electrode to form a solder bump. Heating from below the substrate at a temperature near the melting point, lowering the temperature at the stage where only the vicinity of the interface with the electrode has melted to fix the solder, then apply photo-curable solder resist and irradiate light from the top surface to remove the solder resist. It is characterized by forming a solder dam and a solder bump by curing.

【0010】請求項6記載の半田バンプの形成方法で
は、基板の電極上に半田粒子を用いて半田バンプを設け
る際に、前記電極上に光硬化型ソルダーレジストを塗布
し、その上から半田粒子を埋め込み、半田の融点近傍温
度で基板の下から加熱し、電極との界面付近の半田のみ
が溶融した段階で温度を下げて半田を固定した後、上面
より光照射してソルダーレジストを硬化することにより
半田ダムと半田バンプを形成することを特徴としてい
る。
According to a sixth aspect of the present invention, in the method for forming solder bumps, when the solder bumps are provided on the electrodes of the substrate by using the solder particles, a photo-curable solder resist is applied onto the electrodes, and the solder particles are applied from above. Embedded in, heat from below the substrate at a temperature near the melting point of the solder, lower the temperature when only the solder near the interface with the electrode has melted and fix the solder, then irradiate light from the top surface to cure the solder resist This is characterized by forming solder dams and solder bumps.

【0011】[0011]

【作用】図6はソルダーレジスト4に半田バンプ用の半
田ダムとなる孔を開け、その開孔部に半田粒子3をマウ
ントし、ヒーター7等で加熱し、溶融させて半田バンプ
3’を形成した例を示す図であり、このようにレジスト
4により半田ダムを形成することにより、リフローして
も基板1の電極2上の半田3’が流れだすことを防止で
きる。基板1の電極2上に図6に示すようなレジスト4
による半田ダムを形成する方法としては、基板の全面に
フォトレジストを塗布して膜形成した後に、フォトマス
クを用いたフォトリソプロセスによって孔を開ける方法
が考えられる。しかし、この方法では、フォトレジスト
膜形成、フォトマスクのマウント、露光、現像、乾燥
と、半田ダムを設けるための工程数が多いという問題が
ある。
In FIG. 6, a hole serving as a solder dam for a solder bump is opened in the solder resist 4, and the solder particle 3 is mounted in the opening and heated by a heater 7 or the like to be melted to form a solder bump 3 '. It is a diagram showing an example, and by forming the solder dam by the resist 4 in this way, it is possible to prevent the solder 3'on the electrode 2 of the substrate 1 from flowing out even if it is reflowed. A resist 4 as shown in FIG. 6 is formed on the electrode 2 of the substrate 1.
As a method of forming the solder dam by the method, a method of forming a film by coating a photoresist on the entire surface of the substrate and then forming a hole by a photolithography process using a photomask is considered. However, this method has a problem in that the number of steps for forming a photoresist film, mounting a photomask, exposing, developing, and drying and providing a solder dam is large.

【0012】本発明は基板の電極上に半田ダムを設ける
ためのプロセスを簡略にしようとするもので、請求項1
の形成方法では、熱硬化型ソルダーレジストを用い、半
田バンプを設ける箇所に対応して凸部を設けた転写板を
基板に押圧したまま加熱硬化し、硬化後に転写板を取り
除くことにより、容易に半田配置位置に半田ダムが形成
される。また、請求項2の形成方法では、光硬化型ソル
ダーレジストを用い、半田バンプを設ける箇所に対応し
て凸部を設けた透明な転写板を基板に押圧したまま転写
板の上部より光照射し、硬化後に転写板を取り除くこと
により、容易に半田配置位置に半田ダムが形成される。
また、請求項3,4の形成方法では、電極上にソルダー
レジストを塗布し、硬化後、半田バンプを設ける箇所に
対応して、先端に所望の曲率を持った針状の突孔治具を
1本あるいは複数本押圧することにより、容易に半田配
置位置に半田ダムが形成される。このように請求項1〜
4の形成方法によれば、フォトリソプロセスに比べて少
ない工程数で半田ダムを形成することができる。
The present invention seeks to simplify the process for providing solder dams on the electrodes of the substrate.
In the forming method, a thermosetting solder resist is used, and the transfer plate having the convex portions corresponding to the positions where the solder bumps are provided is heated and cured while being pressed against the substrate, and the transfer plate is removed after curing, so that it is easy. A solder dam is formed at the solder arrangement position. Further, in the forming method according to claim 2, a photo-curable solder resist is used, and a transparent transfer plate having protrusions corresponding to positions where solder bumps are provided is irradiated with light from above the transfer plate while being pressed against the substrate. By removing the transfer plate after curing, the solder dam is easily formed at the solder arrangement position.
Further, in the forming method of claims 3 and 4, a solder resist is applied on the electrodes, and after hardening, a needle-shaped projecting hole jig having a desired curvature at the tip is provided corresponding to the place where the solder bump is provided. By pressing one or a plurality of solder balls, solder dams are easily formed at the solder arrangement positions. Thus, claims 1 to
According to the forming method of No. 4, the solder dam can be formed in a smaller number of steps as compared with the photolithography process.

【0013】さらに、請求項5の半田バンプの形成方法
においては、基板の電極上に半田粒子を先に固定した
後、光硬化型ソルダーレジストを塗布し、上面より光照
射してソルダーレジストを硬化することにより半田ダム
と半田バンプとが形成され、また、請求項6の半田バン
プの形成方法においては、電極上に光硬化型ソルダーレ
ジストを塗布し、その上から半田粒子を埋め込み、半田
の融点近傍温度で基板の下から加熱し、電極との界面付
近の半田のみが溶融した段階で温度を下げて半田を固定
した後、上面より光照射してソルダーレジストを硬化す
ることにより半田ダムと半田バンプとが形成されるた
め、請求項5,6記載の形成方法では、転写板や突孔治
具等の特別な装置を用いずに半田ダムと半田バンプとを
同時に形成することができる。
Further, in the method of forming solder bumps according to the present invention, after the solder particles are first fixed on the electrodes of the substrate, a photo-curable solder resist is applied, and the solder resist is cured by irradiating light from the upper surface. By doing so, a solder dam and a solder bump are formed. Further, in the method of forming a solder bump according to claim 6, a photo-curing solder resist is applied on the electrode, and solder particles are embedded from above to form a melting point of the solder. The solder dam and solder are heated by heating from below the substrate at a near temperature, lowering the temperature when the solder near the interface with the electrode has melted and fixing the solder, and then irradiating light from above to cure the solder resist. Since the bumps are formed, in the forming method according to claims 5 and 6, the solder dam and the solder bumps can be simultaneously formed without using a special device such as a transfer plate or a projecting hole jig. Kill.

【0014】[0014]

【実施例】以下、本発明の実施例を図面を参照して説明
する。 (実施例1)図1は請求項1の実施例を示す半田ダム及
び半田バンプの形成プロセスの説明図である。まず図1
(a)に示すように、基板1の電極2上に熱硬化型ソル
ダーレジスト5を塗布する。次に同図(b)に示すよう
に、半田バンプを設ける箇所に対応して凸部を形成した
転写板(型)6を基板1側に押し付け、押圧したままヒ
ーター7等で加熱しソルダーレジスト5を硬化させる。
この後、転写板6を取り除くことにより、転写板6の凸
部に相当する箇所、すなわち半田粒子をマウントする部
分のソルダーレジスト5に半田バンプ用半田ダムとなる
凹部8が形成される。次に同図(c)に示すように、ソ
ルダーレジスト5に形成された凹部8の中に半田粒子3
を配置し、加熱して固定すれば半田バンプが形成され
る。このようにして形成された半田バンプは、半田ダム
となる凹部8内にあるため、リフローさせても流れ出さ
ない。
Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 1 is an explanatory view of a process of forming a solder dam and a solder bump showing an embodiment of claim 1. Figure 1
As shown in (a), a thermosetting solder resist 5 is applied on the electrode 2 of the substrate 1. Next, as shown in FIG. 3B, a transfer plate (mold) 6 having convex portions corresponding to positions where solder bumps are provided is pressed against the substrate 1 side, and is heated by a heater 7 or the like while being pressed, and solder resist is applied. Cure 5
After that, the transfer plate 6 is removed to form recesses 8 that will serve as solder dams for solder bumps in the solder resist 5 at the portions corresponding to the protrusions of the transfer plate 6, that is, at the portions where the solder particles are mounted. Next, as shown in FIG. 3C, the solder particles 3 are placed in the recesses 8 formed in the solder resist 5.
Are arranged, heated and fixed to form solder bumps. The solder bump thus formed does not flow out even if it is reflowed because it is in the concave portion 8 which becomes the solder dam.

【0015】(実施例2)図2は請求項2の実施例を示
す半田ダム及び半田バンプの形成プロセスの説明図であ
る。まず図2(a)に示すように、基板1の電極2上に
光硬化型ソルダーレジスト9を塗布する。次に同図
(b)に示すように、半田バンプを設ける箇所に対応し
て凸部を形成した透明な転写板(型)10を基板1側に
押し付け、押圧したまま転写板10の上部より光照射し
ソルダーレジスト9を硬化させる。この後、転写板10
を取り除くことにより、転写板10の凸部に相当する箇
所、すなわち半田粒子をマウントする部分のソルダーレ
ジスト9に半田バンプ用半田ダムとなる凹部11が形成
される。次に同図(c)に示すように、ソルダーレジス
ト9に形成された凹部11の中に半田粒子3を配置し、
加熱して固定すれば半田バンプが形成される。このよう
にして形成された半田バンプは、半田ダムとなる凹部1
1内にあるため、リフローさせても流れ出さない。
(Embodiment 2) FIG. 2 is an explanatory view of a process of forming a solder dam and a solder bump showing an embodiment of claim 2. First, as shown in FIG. 2A, a photocurable solder resist 9 is applied on the electrode 2 of the substrate 1. Next, as shown in FIG. 2B, a transparent transfer plate (mold) 10 having convex portions corresponding to the positions where the solder bumps are provided is pressed against the substrate 1 side, and is pressed from above the transfer plate 10. Light is applied to cure the solder resist 9. After this, the transfer plate 10
By removing the above, a concave portion 11 to be a solder bump solder dam is formed in the solder resist 9 at a portion corresponding to the convex portion of the transfer plate 10, that is, a portion where the solder particles are mounted. Next, as shown in FIG. 3C, the solder particles 3 are placed in the recesses 11 formed in the solder resist 9.
If heated and fixed, solder bumps are formed. The solder bumps formed in this way are recesses 1 that will become solder dams.
Since it is within 1, it will not flow out even if it is reflowed.

【0016】(実施例3)図3は請求項3,4の実施例
を示す半田ダム及び半田バンプの形成プロセスの説明図
である。まず図3(a)に示すように、基板1の電極2
上にソルダーレジスト12を塗布し硬化させる。次に同
図(b)に示すように、半田バンプを設ける箇所に対応
して、先端に所望の曲率をもった針状の突孔治具13を
押圧することによりソルダーレジスト12に孔を開け、
半田バンプ用半田ダムとなる凹部14を形成する。次に
同図(c)に示すように、ソルダーレジスト12に形成
された凹部14の中に半田粒子3を配置し、加熱して固
定すれば半田バンプが形成される。尚、上記針状の突孔
治具13の先端は例えば、使用する半田粒子3の径より
やや大きめの曲率をもった半球状にしておく。また、突
孔治具13を押圧する際に、押圧だけでなく超音波振動
を加えれば(請求項4)、容易にかつ安定に孔を開ける
ことができる。また、複数の針状の突孔治具13を同時
に用いて複数箇所に同時に孔を開けることができる。
(Embodiment 3) FIG. 3 is an explanatory view of a process of forming solder dams and solder bumps showing the third and fourth embodiments. First, as shown in FIG. 3A, the electrode 2 of the substrate 1
A solder resist 12 is applied on the top and cured. Next, as shown in FIG. 3B, a hole is formed in the solder resist 12 by pressing a needle-shaped projecting hole jig 13 having a desired curvature at the tip, corresponding to the place where the solder bump is provided. ,
A recess 14 is formed to serve as a solder bump solder dam. Next, as shown in FIG. 3C, the solder particles 3 are placed in the recesses 14 formed in the solder resist 12, and heated and fixed to form solder bumps. The tip of the needle-shaped projecting jig 13 is, for example, hemispherical with a curvature slightly larger than the diameter of the solder particles 3 to be used. Further, when the projecting hole jig 13 is pressed, if not only the pressing but also ultrasonic vibration is applied (Claim 4), the hole can be easily and stably formed. Further, a plurality of needle-shaped projecting hole jigs 13 can be simultaneously used to form holes at a plurality of positions at the same time.

【0017】(実施例4)図4は請求項5の実施例を示
す半田ダム及び半田バンプの形成プロセスの説明図であ
る。まず図4(a)に示すように、基板1の電極2上の
所定位置に半田粒子3を配置する。配置方法としては、
例えば半田粒子3が通る孔を開けたマスクによって行な
う。次に同図(b)に示すように、基板1の下からヒー
ター7等を用いて半田の融点近傍の温度で加熱する。そ
して半田粒子3の電極2との界面付近が溶融しだしてか
ら冷却すると半田粒子3は電極2上に固定される。次に
同図(c)に示すように、基板1の電極2上に光硬化型
ソルダーレジスト15を半田粒子径より薄く塗布し、上
面より光照射してソルダーレジスト15を硬化させるこ
とにより、半田ダムと半田バンプが形成される。
(Embodiment 4) FIG. 4 is an explanatory view of a process of forming a solder dam and a solder bump showing a fifth embodiment of the present invention. First, as shown in FIG. 4A, the solder particles 3 are arranged at predetermined positions on the electrodes 2 of the substrate 1. As a placement method,
For example, it is performed by a mask having holes through which the solder particles 3 pass. Next, as shown in FIG. 3B, the substrate 1 is heated from below under the temperature around the melting point of the solder using the heater 7 or the like. Then, when the vicinity of the interface between the solder particle 3 and the electrode 2 begins to melt and then is cooled, the solder particle 3 is fixed on the electrode 2. Next, as shown in FIG. 1C, a photo-curable solder resist 15 is applied onto the electrode 2 of the substrate 1 so as to have a thickness smaller than the solder particle diameter, and the solder resist 15 is cured by irradiating light from the upper surface to cure the solder. Dams and solder bumps are formed.

【0018】(実施例5)図5は請求項5の実施例を示
す半田ダム及び半田バンプの形成プロセスの説明図であ
る。まず図5(a)に示すように、基板1の電極2上に
光硬化型ソルダーレジスト16を半田粒子径より薄く塗
布する。次に同図(b)に示すように、ソルダーレジス
ト16の上から所定位置に半田粒子3を配置し埋め込
む。次に同図(c)に示すように、基板1の下からヒー
ター7等を用いて半田の融点近傍の温度で加熱する。そ
して半田粒子3の電極2との界面付近が溶融しだしてか
ら冷却すると半田粒子3は電極2上に固定される。次に
同図(d)に示すように、上方より光照射してソルダー
レジスト16を硬化させることにより、半田ダムと半田
バンプが形成される。
(Embodiment 5) FIG. 5 is an explanatory view of a process of forming a solder dam and a solder bump showing an embodiment of claim 5. First, as shown in FIG. 5A, the photo-curable solder resist 16 is applied onto the electrode 2 of the substrate 1 so as to have a thickness smaller than the solder particle diameter. Next, as shown in FIG. 3B, the solder particles 3 are arranged and embedded at predetermined positions from above the solder resist 16. Next, as shown in FIG. 2C, the heater is heated from below the substrate 1 at a temperature near the melting point of the solder. Then, when the vicinity of the interface between the solder particle 3 and the electrode 2 begins to melt and then is cooled, the solder particle 3 is fixed on the electrode 2. Next, as shown in FIG. 5D, the solder resist 16 is cured by irradiating light from above to form the solder dam and the solder bump.

【0019】[0019]

【発明の効果】以上説明したように、請求項1の半田バ
ンプ用半田ダムの形成方法では、熱硬化型ソルダーレジ
ストを用い、半田バンプを設ける箇所に対応して凸部を
設けた転写板を基板に押圧したまま加熱硬化し、硬化後
に転写板を取り除くことにより、容易に半田配置位置に
半田流出防止用の半田ダムを設けることができる。ま
た、転写板(型)によって半田バンプの配置位置が決定
されているため、各電極間の相対位置が確保されるの
で、セルフアライメント効果の効率が落ちない(力の方
向がそろう)。
As described above, in the method for forming the solder dam for solder bumps according to the first aspect, the thermosetting solder resist is used, and the transfer plate having the convex portions corresponding to the places where the solder bumps are provided is provided. A solder dam for preventing solder outflow can be easily provided at a solder arrangement position by heating and curing while pressing the substrate and removing the transfer plate after curing. Further, since the arrangement position of the solder bump is determined by the transfer plate (mold), the relative position between the electrodes is secured, so that the efficiency of the self-alignment effect does not decrease (the directions of force are aligned).

【0020】請求項2の半田バンプ用半田ダムの形成方
法では、光硬化型ソルダーレジストを用い、半田バンプ
を設ける箇所に対応して凸部を設けた透明な転写板を基
板に押圧したまま転写板の上部より光照射し、硬化後に
転写板を取り除くことにより、容易に半田配置位置に半
田流出防止用の半田ダムを設けることができる。また、
転写板(型)によって半田バンプの配置位置が決定され
ているため、各電極間の相対位置が確保されるので、セ
ルフアライメント効果の効率が落ちない(力の方向がそ
ろう)。
In the method for forming a solder dam for solder bumps according to a second aspect of the present invention, a photocurable solder resist is used, and a transparent transfer plate having protrusions corresponding to positions where solder bumps are provided is transferred to the substrate while being pressed. By irradiating light from above the plate and removing the transfer plate after curing, a solder dam for preventing solder outflow can be easily provided at the solder arrangement position. Also,
Since the placement position of the solder bump is determined by the transfer plate (mold), the relative position between the electrodes is secured, so the efficiency of the self-alignment effect does not decrease (the directions of the forces are aligned).

【0021】請求項3の半田バンプ用半田ダムの形成方
法では、電極上にソルダーレジストを塗布し、硬化後、
半田バンプを設ける箇所に対応して、先端に所望の曲率
を持った針状の突孔治具を1本あるいは複数本押圧する
ことにより、容易に半田配置位置に半田流出防止用の半
田ダムを設けることができる。また、上記のような転写
板(型)が不要となり、ソルダーレジストも熱硬化型、
光硬化型の何れでもよい。
In the method for forming a solder dam for solder bumps according to a third aspect, a solder resist is applied on the electrodes, and after curing,
A solder dam for preventing solder outflow can be easily provided at the solder placement position by pressing one or a plurality of needle-shaped projecting hole jigs having a desired curvature at the tip corresponding to the places where the solder bumps are provided. Can be provided. In addition, the transfer plate (mold) as described above is unnecessary, and the solder resist is also thermosetting type,
Any of photo-curing type may be used.

【0022】請求項4の半田バンプ用半田ダムの形成方
法では、請求項3の形成方法において、針状の突孔治具
を押圧すると同時に超音波を印加することにより、押圧
だけでは心配なレジストの完全除去が行なえ、電極面を
確実に出すことができる。
In the method for forming a solder dam for solder bumps according to claim 4, in the method for forming solder bumps according to claim 3, by applying ultrasonic waves at the same time as pressing the needle-shaped projection hole jig, there is a concern that the resist may be pressed only. Can be completely removed, and the electrode surface can be surely exposed.

【0023】請求項5の半田バンプの形成方法において
は、基板の電極上に半田粒子を先に固定した後、光硬化
型ソルダーレジストを塗布し、上面より光照射してソル
ダーレジストを硬化することにより半田ダムと半田バン
プとが形成され、転写板や突孔治具等の特別な装置を用
いずに半田ダムと半田バンプとを同時に形成することが
できる。
In the method of forming solder bumps according to a fifth aspect of the present invention, after the solder particles are first fixed on the electrodes of the substrate, a photocurable solder resist is applied, and the solder resist is cured by irradiating light from above. Thus, the solder dam and the solder bump are formed, and the solder dam and the solder bump can be simultaneously formed without using a special device such as a transfer plate or a projecting hole jig.

【0024】請求項6の半田バンプの形成方法において
は、電極上に光硬化型ソルダーレジストを塗布し、その
上から半田粒子を埋め込み、半田の融点近傍温度で基板
の下から加熱し、電極との界面付近の半田のみが溶融し
た段階で温度を下げて半田を固定した後、上面より光照
射してソルダーレジストを硬化することにより半田ダム
と半田バンプとが形成されるため、転写板や突孔治具等
の特別な装置を用いずに半田ダムと半田バンプとを同時
に形成することができる。
In the method of forming solder bumps according to the sixth aspect, a photo-curable solder resist is applied on the electrodes, solder particles are embedded on the electrodes, and the solder is heated from below the substrate at a temperature near the melting point of the solder to form electrodes. At the stage where only the solder near the interface is melted, the temperature is lowered to fix the solder, and then the solder resist and the solder bump are formed by irradiating light from the upper surface to cure the solder resist. The solder dam and the solder bump can be simultaneously formed without using a special device such as a hole jig.

【0025】以上のように、請求項1〜6の発明では、
何れも基板電極上に半田ダム及び半田バンプを設けるた
めのプロセスを簡略にすることができ、容易に半田ダム
を有する半田バンプを形成することができる。従って、
このようにして形成された半田バンプを用いたフェイス
ダウンリフロー実装では、半田流出を防止できる半田ダ
ムによって、リフロー時に半田の量、位置が確保される
ため、セルフアライメント効果が得られ、高精度のチッ
プマウントが行なえる。
As described above, according to the inventions of claims 1 to 6,
In either case, the process for providing the solder dam and the solder bump on the substrate electrode can be simplified, and the solder bump having the solder dam can be easily formed. Therefore,
In face-down reflow mounting using the solder bumps formed in this way, a solder dam that can prevent solder outflow secures the amount and position of solder during reflow, so a self-alignment effect can be obtained and high accuracy can be obtained. Can be chip mounted.

【図面の簡単な説明】[Brief description of drawings]

【図1】請求項1の実施例を示す半田ダム及び半田バン
プの形成プロセスの説明図である。
FIG. 1 is an explanatory diagram of a process of forming a solder dam and a solder bump showing an embodiment of claim 1;

【図2】請求項2の実施例を示す半田ダム及び半田バン
プの形成プロセスの説明図である。
FIG. 2 is an explanatory diagram of a process of forming a solder dam and a solder bump showing an embodiment of claim 2;

【図3】請求項3,4の実施例を示す半田ダム及び半田
バンプの形成プロセスの説明図である。
FIG. 3 is an explanatory diagram of a process of forming solder dams and solder bumps showing the third and fourth embodiments.

【図4】請求項5の実施例を示す半田ダム及び半田バン
プの形成プロセスの説明図である。
FIG. 4 is an explanatory diagram of a process of forming a solder dam and a solder bump showing an embodiment of claim 5;

【図5】請求項6の実施例を示す半田ダム及び半田バン
プの形成プロセスの説明図である。
FIG. 5 is an explanatory diagram of a process of forming a solder dam and a solder bump showing an embodiment of claim 6;

【図6】半田ダム及びそのダム内に形成された半田バン
プの一例を示す図である。
FIG. 6 is a diagram showing an example of a solder dam and a solder bump formed in the dam.

【図7】従来の半田バンプを用いたリフロー時の課題の
説明図である。
FIG. 7 is an explanatory diagram of a problem at the time of reflow using a conventional solder bump.

【符号の説明】[Explanation of symbols]

1:基板 2:電極 3:半田粒子 4:ソルダーレジスト 5:熱硬化型ソルダーレジスト 6:転写板(型) 7:ヒーター 8,11,14:半田ダムとなる凹部 9,15,16:光硬化型ソルダーレジスト 10:透明な転写板(型) 12:ソルダーレジスト 13:針状の突孔治具 1: Substrate 2: Electrode 3: Solder particle 4: Solder resist 5: Thermosetting solder resist 6: Transfer plate (mold) 7: Heater 8, 11, 14: Recessed part which becomes solder dam 9, 15, 16: Photocuring Mold solder resist 10: Transparent transfer plate (mold) 12: Solder resist 13: Needle-shaped projecting jig

───────────────────────────────────────────────────── フロントページの続き (72)発明者 桑崎 聡 東京都大田区中馬込1丁目3番6号・株式 会社リコー内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Satoshi Kuwazaki 1-3-3 Nakamagome, Ota-ku, Tokyo, Ricoh Co., Ltd.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】基板の電極上に半田粒子を用いて半田バン
プを設ける際に、前記電極上に熱硬化型ソルダーレジス
トを塗布し、半田バンプを設ける箇所に対応して凸部を
設けた転写板を前記基板に押圧したまま加熱硬化し、硬
化後に転写板を取り除くことにより、半田粒子マウント
部分のソルダーレジストに半田バンプ用の半田ダムとな
る凹部を形成することを特徴とする半田バンプ用半田ダ
ムの形成方法。
1. When a solder bump is formed on a substrate electrode by using solder particles, a thermosetting solder resist is applied on the electrode, and a protrusion is provided corresponding to a place where the solder bump is provided. Solder for solder bumps, characterized in that the plate is heated and cured while being pressed against the substrate, and after the curing, the transfer plate is removed to form recesses to be solder dams for solder bumps in the solder resist at the solder particle mount portion. How to form a dam.
【請求項2】基板の電極上に半田粒子を用いて半田バン
プを設ける際に、前記電極上に光硬化型ソルダーレジス
トを塗布し、半田バンプを設ける箇所に対応して凸部を
設けた透明な転写板を前記基板に押圧したまま転写板の
上部より光照射し、硬化後に転写板を取り除くことによ
り、半田粒子マウント部分のソルダーレジストに半田バ
ンプ用の半田ダムとなる凹部を形成することを特徴とす
る半田バンプ用半田ダムの形成方法。
2. When a solder bump is provided on a substrate electrode by using solder particles, a photo-curable solder resist is applied on the electrode and a convex portion is provided corresponding to a place where the solder bump is provided. It is possible to form recesses that will become solder dams for solder bumps in the solder resist on the solder particle mount part by irradiating light from above the transfer plate while pressing the transfer plate against the substrate and removing the transfer plate after curing. A method for forming a solder dam for a solder bump.
【請求項3】基板の電極上に半田粒子を用いて半田バン
プを設ける際に、前記電極上にソルダーレジストを塗布
し、硬化後、半田バンプを設ける箇所に対応して、先端
に所望の曲率を持った針状の突孔治具を1本あるいは複
数本押圧することにより、所定の場所に半田バンプ用の
半田ダムとなる凹部を形成することを特徴とする半田バ
ンプ用半田ダムの形成方法。
3. When a solder bump is formed on a substrate electrode by using solder particles, a solder resist is applied on the electrode, and after curing, a desired curvature is provided at a tip end corresponding to a place where the solder bump is provided. A method for forming a solder dam for solder bumps, characterized in that a concave portion to be a solder dam for a solder bump is formed at a predetermined location by pressing one or a plurality of needle-shaped projecting hole jigs .
【請求項4】請求項3記載の半田バンプ用半田ダムの形
成方法において、針状の突孔治具を押圧すると同時に超
音波を印加することを特徴とする半田バンプ用半田ダム
の形成方法。
4. The method for forming a solder dam for solder bumps according to claim 3, wherein ultrasonic waves are applied simultaneously with pressing the needle-shaped jig.
【請求項5】基板の電極上に半田粒子を用いて半田バン
プを設ける際に、前記電極上の所望の位置に所定量の半
田を配置させ、半田の融点近傍温度で基板の下から加熱
し、電極との界面付近のみが溶融した段階で温度を下げ
て半田を固定した後、光硬化型ソルダーレジストを塗布
し、上面より光照射してソルダーレジストを硬化するこ
とにより半田ダムと半田バンプを形成することを特徴と
する半田バンプの形成方法。
5. When a solder bump is formed on a substrate electrode by using solder particles, a predetermined amount of solder is placed at a desired position on the electrode and heated from below the substrate at a temperature near the melting point of the solder. , The temperature is lowered at the stage where only the interface with the electrode is melted to fix the solder, and then the photocurable solder resist is applied, and the solder dam and the solder bump are cured by irradiating light from the top surface to cure the solder resist. A method for forming a solder bump, which comprises forming the solder bump.
【請求項6】基板の電極上に半田粒子を用いて半田バン
プを設ける際に、前記電極上に光硬化型ソルダーレジス
トを塗布し、その上から半田粒子を埋め込み、半田の融
点近傍温度で基板の下から加熱し、電極との界面付近の
半田のみが溶融した段階で温度を下げて半田を固定した
後、上面より光照射してソルダーレジストを硬化するこ
とにより半田ダムと半田バンプを形成することを特徴と
する半田バンプの形成方法。
6. When a solder bump is provided on a substrate electrode by using solder particles, a photo-curable solder resist is applied on the electrode, and the solder particles are embedded on the electrode, and the substrate is heated at a temperature near the melting point of the solder. After heating, the temperature is lowered to fix the solder when only the solder near the interface with the electrode has melted, and then the solder dam and solder bump are formed by irradiating light from the upper surface to cure the solder resist. A method for forming a solder bump, which is characterized by the above.
JP130795A 1995-01-09 1995-01-09 Forming method of solder dam for solder bump and forming method of solder bump Pending JPH08191179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP130795A JPH08191179A (en) 1995-01-09 1995-01-09 Forming method of solder dam for solder bump and forming method of solder bump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP130795A JPH08191179A (en) 1995-01-09 1995-01-09 Forming method of solder dam for solder bump and forming method of solder bump

Publications (1)

Publication Number Publication Date
JPH08191179A true JPH08191179A (en) 1996-07-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP130795A Pending JPH08191179A (en) 1995-01-09 1995-01-09 Forming method of solder dam for solder bump and forming method of solder bump

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0997935A4 (en) * 1997-04-11 2005-03-02 Ibiden Co Ltd Printed wiring board and method for manufacturing the same
KR101229258B1 (en) * 2011-07-01 2013-02-04 대덕전자 주식회사 Method of manufacturing a pad for chip-embedded printed circuit board

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0997935A4 (en) * 1997-04-11 2005-03-02 Ibiden Co Ltd Printed wiring board and method for manufacturing the same
KR101229258B1 (en) * 2011-07-01 2013-02-04 대덕전자 주식회사 Method of manufacturing a pad for chip-embedded printed circuit board

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